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Filamentary superconductivity of resistively-switched strontium titanate
Authors:
K. Szot,
C. Rodenbücher,
K. Rogacki,
G. Bihlmayer,
W. Speier,
K. Roleder,
F. Krok,
H. Keller,
A. Simon,
A. Bussmann-Holder
Abstract:
SrTiO$_3$, although a wide gap insulator, has long been known to become metallic and superconducting at extremely low doping levels. This has given rise to questions concerning the coexistence or interdependence of metallicity, superconductivity, and the material's polar properties. This issue becomes especially intriguing in conjunction with the observation that filamentary metallicity can be ind…
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SrTiO$_3$, although a wide gap insulator, has long been known to become metallic and superconducting at extremely low doping levels. This has given rise to questions concerning the coexistence or interdependence of metallicity, superconductivity, and the material's polar properties. This issue becomes especially intriguing in conjunction with the observation that filamentary metallicity can be induced by means of resistive switching at conditions well below relevant doping levels for homogeneous metallicity. In this study, we demonstrate that resistive switching can also be employed to generate superconductivity at the superconducting transition temperature of $T_c$ $\approx$ 0.2 K in SrTiO$_3$. By combining local characterization of the conductivity with theoretical analysis, we propose that the superconducting properties are associated with the electro-formation of columnar-like bundles with a diameter of 40-50 nm, consisting of metallic filaments surrounded by polar regions. We provide a theoretical model identifying the coexistence of metallic and polar regions as a prerequisite for the filamentary-like superconductivity observed.
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Submitted 14 October, 2021;
originally announced October 2021.
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A physical method for investigating defect chemistry in solid metal oxides
Authors:
Christian Rodenbücher,
Carsten Korte,
Thorsten Schmitz-Kempen,
Sebastian Bette,
Kristof Szot
Abstract:
The investigation of the defect chemistry of solid oxides is of central importance for the understanding of redox processes. This can be performed by measuring conductivity as a function of the oxygen partial pressure, which is conventionally established by using buffer gas mixtures or oxygen pumps based on zirconia. However, this approach has some limitations, such as difficulty regulating oxygen…
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The investigation of the defect chemistry of solid oxides is of central importance for the understanding of redox processes. This can be performed by measuring conductivity as a function of the oxygen partial pressure, which is conventionally established by using buffer gas mixtures or oxygen pumps based on zirconia. However, this approach has some limitations, such as difficulty regulating oxygen partial pressure in some intermediate-pressure regions or the possibility of influencing the redox process by gases that can also be incorporated into the oxide or react with the surface via heterogeneous catalysis. Herein, we present an alternative physical method in which the oxygen partial pressure is controlled by dosing pure oxygen inside an ultra-high vacuum chamber. To monitor the conductivity of the oxide under investigation, we employ a dedicated four-probe measurement system that relies on the application of a very small AC voltage, in combination with lock-in data acquisition using highly sensitive electrometers, minimizing the electrochemical polarization or electro-reduction and degradation effects. By analyzing the model material SrTiO3, we demonstrate that its characteristic redox behavior can be reproduced in good agreement with the theory when performing simultaneous electrical conductivity relaxation (ECR) and high-temperature equilibrium conductivity (HTEC) measurements. We show that the use of pure oxygen allows for a direct analysis of the characteristic oxygen dose, which opens up various perspectives for a detailed analysis of the surface chemistry of redox processes.
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Submitted 13 November, 2020;
originally announced November 2020.
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Detection of confined current paths on oxide surfaces by local-conductivity atomic force microscopy with atomic resolution
Authors:
C. Rodenbücher,
G. Bihlmayer,
W. Speier,
J. Kubacki,
M. Wojtyniak,
M. Rogala,
D. Wrana,
F. Krok,
K. Szot
Abstract:
The analysis of the electronic surface properties of transition metal oxides being key materials for future nanoelectronics requires a direct characterization of the conductivity with highest spatial resolution. Using local conductivity atomic force microscopy (LC-AFM) we demonstrate the possibility of recording current maps with true atomic resolution. The application of this technique on surface…
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The analysis of the electronic surface properties of transition metal oxides being key materials for future nanoelectronics requires a direct characterization of the conductivity with highest spatial resolution. Using local conductivity atomic force microscopy (LC-AFM) we demonstrate the possibility of recording current maps with true atomic resolution. The application of this technique on surfaces of reduced TiO$_2$ and SrTiO$_3$ reveals that the distribution of surface conductivity has a significant localized nature. Assisted by density functional theory (DFT) we propose that the presence of oxygen vacancies in the surface layer of such materials can introduce short range disturbances of electronic structure with confinement of metallic states on the nanoscale.
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Submitted 23 November, 2016;
originally announced November 2016.
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Hafnium carbide formation in oxygen deficient hafnium oxide thin films
Authors:
C. Rodenbücher,
E. Hildebrandt,
K. Szot,
S. U. Sharath,
J. Kurian,
P. Komissinskiy,
U. Breuer,
R. Waser,
L. Alff
Abstract:
On highly oxygen deficient thin films of hafnium oxide (hafnia, HfO$_{2-x}$) contaminated with adsorbates of carbon oxides, the formation of hafnium carbide (HfC$_x$) at the surface during vacuum annealing at temperatures as low as 600 °C is reported. Using X-ray photoelectron spectroscopy the evolution of the HfC$_x$ surface layer related to a transformation from insulating into metallic state is…
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On highly oxygen deficient thin films of hafnium oxide (hafnia, HfO$_{2-x}$) contaminated with adsorbates of carbon oxides, the formation of hafnium carbide (HfC$_x$) at the surface during vacuum annealing at temperatures as low as 600 °C is reported. Using X-ray photoelectron spectroscopy the evolution of the HfC$_x$ surface layer related to a transformation from insulating into metallic state is monitored in situ. In contrast, for fully stoichiometric HfO$_2$ thin films prepared and measured under identical conditions, the formation of HfC$_x$ was not detectable suggesting that the enhanced adsorption of carbon oxides on oxygen deficient films provides a carbon source for the carbide formation. This shows that a high concentration of oxygen vacancies in carbon contaminated hafnia lowers considerably the formation energy of hafnium carbide. Thus, the presence of a sufficient amount of residual carbon in resistive random access memory devices might lead to a similar carbide formation within the conducting filaments due to Joule heating.
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Submitted 27 June, 2016;
originally announced June 2016.
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Inhomogeneity of donor doping in SrTiO3 substrates studied by fluorescence-lifetime imaging microscopy
Authors:
C. Rodenbücher,
T. Gensch,
W. Speier,
U. Breuer,
M. Pilch,
H. Hardtdegen,
M. Mikulics,
E. Zych,
R. Waser,
K. Szot
Abstract:
Fluorescence-lifetime imaging microscopy (FLIM) was applied to investigate the donor distribution in SrTiO3 single crystals. On the surfaces of Nb- and La-doped SrTiO3, structures with different fluorescence intensities and lifetimes were found that could be related to different concentrations of Ti3+. Furthermore, the inhomogeneous distribution of donors caused a non-uniform conductivity of the s…
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Fluorescence-lifetime imaging microscopy (FLIM) was applied to investigate the donor distribution in SrTiO3 single crystals. On the surfaces of Nb- and La-doped SrTiO3, structures with different fluorescence intensities and lifetimes were found that could be related to different concentrations of Ti3+. Furthermore, the inhomogeneous distribution of donors caused a non-uniform conductivity of the surface, which complicates the production of potential electronic devices by the deposition of oxide thin films on top of doped single crystals. Hence, we propose FLIM as a convenient technique (length scale: 1 $μ$m) for characterizing the quality of doped oxide surfaces, which could help to identify appropriate substrate materials.
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Submitted 22 October, 2013;
originally announced October 2013.
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Insulator-to-metal transition of SrTiO3:Nb single crystal surfaces induced by Ar+ bombardment
Authors:
C. Rodenbücher,
S. Wicklein,
R. Waser,
K. Szot
Abstract:
In this paper, the effect of Ar+ bombardment of SrTiO3:Nb surface layers is investigated on the macro- and nanoscale using surface-sensitive methods. After bombardment, the stoichiometry and electronic structure are changed distinctly leading to an insulator-to-metal transition related to the change of the Ti "d" electron from d0 to d1 and d2. During bombardment, conducting islands are formed on t…
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In this paper, the effect of Ar+ bombardment of SrTiO3:Nb surface layers is investigated on the macro- and nanoscale using surface-sensitive methods. After bombardment, the stoichiometry and electronic structure are changed distinctly leading to an insulator-to-metal transition related to the change of the Ti "d" electron from d0 to d1 and d2. During bombardment, conducting islands are formed on the surface. The induced metallic state is not stable and can be reversed due to a redox process by external oxidation and even by self-reoxidation upon heating the sample to temperatures of 300°C.
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Submitted 15 March, 2013;
originally announced March 2013.
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Two-dimensional optical control of electron spin orientation by linearly polarized light in InGaAs
Authors:
K. Schmalbuch,
S. Göbbels,
Ph. Schäfers,
Ch. Rodenbücher,
P. Schlammes,
Th. Schäpers,
M. Lepsa,
G. Güntherodt,
B. Beschoten
Abstract:
Optical absorption of circularly polarized light is well known to yield an electron spin polarization in direct band gap semiconductors. We demonstrate that electron spins can even be generated with high efficiency by absorption of linearly polarized light in InGaAs. By changing the incident linear polarization direction we can selectively excite spins both in polar and transverse directions. Thes…
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Optical absorption of circularly polarized light is well known to yield an electron spin polarization in direct band gap semiconductors. We demonstrate that electron spins can even be generated with high efficiency by absorption of linearly polarized light in InGaAs. By changing the incident linear polarization direction we can selectively excite spins both in polar and transverse directions. These directions can be identified by the phase during spin precession using time-resolved Faraday rotation. We show that the spin orientations do not depend on the crystal axes suggesting an extrinsic excitation mechanism.
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Submitted 1 August, 2010;
originally announced August 2010.
