Miniaturizing neural networks for charge state autotuning in quantum dots
Authors:
Stefanie Czischek,
Victor Yon,
Marc-Antoine Genest,
Marc-Antoine Roux,
Sophie Rochette,
Julien Camirand Lemyre,
Mathieu Moras,
Michel Pioro-Ladrière,
Dominique Drouin,
Yann Beilliard,
Roger G. Melko
Abstract:
A key challenge in scaling quantum computers is the calibration and control of multiple qubits. In solid-state quantum dots, the gate voltages required to stabilize quantized charges are unique for each individual qubit, resulting in a high-dimensional control parameter space that must be tuned automatically. Machine learning techniques are capable of processing high-dimensional data - provided th…
▽ More
A key challenge in scaling quantum computers is the calibration and control of multiple qubits. In solid-state quantum dots, the gate voltages required to stabilize quantized charges are unique for each individual qubit, resulting in a high-dimensional control parameter space that must be tuned automatically. Machine learning techniques are capable of processing high-dimensional data - provided that an appropriate training set is available - and have been successfully used for autotuning in the past. In this paper, we develop extremely small feed-forward neural networks that can be used to detect charge-state transitions in quantum dot stability diagrams. We demonstrate that these neural networks can be trained on synthetic data produced by computer simulations, and robustly transferred to the task of tuning an experimental device into a desired charge state. The neural networks required for this task are sufficiently small as to enable an implementation in existing memristor crossbar arrays in the near future. This opens up the possibility of miniaturizing powerful control elements on low-power hardware, a significant step towards on-chip autotuning in future quantum dot computers.
△ Less
Submitted 30 November, 2021; v1 submitted 8 January, 2021;
originally announced January 2021.
Quantum dots with split enhancement gate tunnel barrier control
Authors:
S. Rochette,
M. Rudolph,
A. -M. Roy,
M. Curry,
G. Ten Eyck,
R. Manginell,
J. Wendt,
T. Pluym,
S. M. Carr,
D. Ward,
M. P. Lilly,
M. S. Carroll,
M. Pioro-Ladrière
Abstract:
We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and the other a quantum dot. We demonstrate, in three devices based on two different versions of this elementary structure, that a wide range of tunnel rates is attai…
▽ More
We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and the other a quantum dot. We demonstrate, in three devices based on two different versions of this elementary structure, that a wide range of tunnel rates is attainable while maintaining single-electron occupation. A characteristic change in slope of the charge transitions as a function of the reservoir gate voltage, attributed to screening from charges in the reservoir, is observed in all devices, and is expected to play a role in the sizable tuning orthogonality of the split enhancement gate structure. The all-silicon process is expected to minimize strain gradients from electrode thermal mismatch, while the single gate layer should avoid issues related to overlayers (e.g., additional dielectric charge noise) and help improve yield. Finally, reservoir gate control of the tunnel barrier has implications for initialization, manipulation and readout schemes in multi-quantum dot architectures.
△ Less
Submitted 5 March, 2019; v1 submitted 12 July, 2017;
originally announced July 2017.
