Showing 1–50 of 147 results for author: Roche, S

Quantum transport in nitrogen-doped nanoporous graphenes

Authors: Gaetano Calogero, Isaac Alcón, Alan E. Anaya Morales, Nick Papior, Pol Febrer, Aron W. Cummings, Miguel Pruneda, Stephan Roche, Mads Brandbyge

Abstract: Bottom-up on-surface synthesized nanoporous graphenes (NPGs), realized as 2D arrays of laterally covalently bonded pi-conjugated graphene nanoribbons (GNRs), are a family of carbon nanomaterials which are receiving increasing attention for nanoelectronics and biosensing. Recently, a so-called hybrid-NPG (hNPG) was synthesized, featuring an alternating sequence of doped and non-doped GNRs, resultin… ▽ More Bottom-up on-surface synthesized nanoporous graphenes (NPGs), realized as 2D arrays of laterally covalently bonded pi-conjugated graphene nanoribbons (GNRs), are a family of carbon nanomaterials which are receiving increasing attention for nanoelectronics and biosensing. Recently, a so-called hybrid-NPG (hNPG) was synthesized, featuring an alternating sequence of doped and non-doped GNRs, resulting in a band staggering effect in its electronic structure. Such a feature is appealing for photo-catalysis, photovoltaics and even carbon nanocircuitry. However, to date, little is known about the transport properties of hNPG and its derivatives, which is key for most applications. Here, via Green's functions simulations, we study the quantum transport properties of hNPGs. We find that injected carriers in hNPG spread laterally through a number of GNRs, though such spreading may take place exclusively through GNRs of one type (doped or non-doped). We propose a simple model to discern the key parameters determining the electronic propagation in hNPGs and explore alternative hNPG designs to control the spreading/confinement and anisotropy of charge transport in these systems. For one such design, we find that it is possible to send directed electric signals with sub-nanometer precision for as long as one micrometer - a result first reported for any NPG. △ Less

Submitted 7 July, 2025; originally announced July 2025.

Comments: 16 pages, 5 figures

Controlling Topological Quantum Transport via Non-Perturbative Light-Matter Interaction in Disordered Systems

Authors: Jorge Martinez Romeral, Luis M. Canonico, Aron W. Cummings, Stephan Roche

Abstract: We report the possibility to induce topological quantum transport in otherwise trivial systems through non-perturbative light-matter interactions, as well as the enhancement of this effect in the presence of disorder. Going beyond prior theoretical approaches, we introduce a computational framework which performs large-scale real-space quantum dynamics simulations, including carrier thermalization… ▽ More We report the possibility to induce topological quantum transport in otherwise trivial systems through non-perturbative light-matter interactions, as well as the enhancement of this effect in the presence of disorder. Going beyond prior theoretical approaches, we introduce a computational framework which performs large-scale real-space quantum dynamics simulations, including carrier thermalization and disorder effects, in systems driven out of equilibrium by light or other external interactions. This methodology is illustrated in gapped single-layer and Bernal bilayer graphene but can be implemented in arbitrarily complex systems, including disordered and aperiodic systems, opening novel avenues for the design of multifunctional topological electronic devices that work in far-from-equilibrium regimes. △ Less

Submitted 23 June, 2025; originally announced June 2025.

Comments: 4 pages, 3 figures

The 2D Materials Roadmap

Authors: Wencai Ren, Peter Bøggild, Joan Redwing, Kostya Novoselov, Luzhao Sun, Yue Qi, Kaicheng Jia, Zhongfan Liu, Oliver Burton, Jack Alexander-Webber, Stephan Hofmann, Yang Cao, Yu Long, Quan-Hong Yang, Dan Li, Soo Ho Choi, Ki Kang Kim, Young Hee Lee, Mian Li, Qing Huang, Yury Gogotsi, Nicholas Clark, Amy Carl, Roman Gorbachev, Thomas Olsen , et al. (48 additional authors not shown)

Abstract: Over the past two decades, 2D materials have rapidly evolved into a diverse and expanding family of material platforms. Many members of this materials class have demonstrated their potential to deliver transformative impact on fundamental research and technological applications across different fields. In this roadmap, we provide an overview of the key aspects of 2D material research and developme… ▽ More Over the past two decades, 2D materials have rapidly evolved into a diverse and expanding family of material platforms. Many members of this materials class have demonstrated their potential to deliver transformative impact on fundamental research and technological applications across different fields. In this roadmap, we provide an overview of the key aspects of 2D material research and development, spanning synthesis, properties and commercial applications. We specifically present roadmaps for high impact 2D materials, including graphene and its derivatives, transition metal dichalcogenides, MXenes as well as their heterostructures and moiré systems. The discussions are organized into thematic sections covering emerging research areas (e.g., twisted electronics, moiré nano-optoelectronics, polaritronics, quantum photonics, and neuromorphic computing), breakthrough applications in key technologies (e.g., 2D transistors, energy storage, electrocatalysis, filtration and separation, thermal management, flexible electronics, sensing, electromagnetic interference shielding, and composites) and other important topics (computational discovery of novel materials, commercialization and standardization). This roadmap focuses on the current research landscape, future challenges and scientific and technological advances required to address, with the intent to provide useful references for promoting the development of 2D materials. △ Less

Submitted 28 April, 2025; v1 submitted 28 March, 2025; originally announced March 2025.

Comments: 97 pages, to be published in 2D Materials

Proximity Effects Between the Graphene Quasicrystal and Magic-Angle Twisted Bilayer Graphene

Authors: Pedro Alcázar Guerrero, Viet-Hung Nguyen, Aron W. Cummings, Jean-Christophe Charlier, Stephan Roche

Abstract: We report a numerical study of graphene heterostructures comprised of three individual layers twisted by either the magic angle of $\sim$1.1$^\circ$, or $\sim$$30^\circ$, corresponding to the graphene quasicrystal. The heterostack is modeled using realistic structural and tight-binding models, while transport properties are calculated in both clean and disordered systems containing up to $\sim$8 m… ▽ More We report a numerical study of graphene heterostructures comprised of three individual layers twisted by either the magic angle of $\sim$1.1$^\circ$, or $\sim$$30^\circ$, corresponding to the graphene quasicrystal. The heterostack is modeled using realistic structural and tight-binding models, while transport properties are calculated in both clean and disordered systems containing up to $\sim$8 million atoms. The weak interaction between different layers allows us to scrutinize the electronic mixing of flat bands and quasicrystalline states, which are altered differently in the low- and high-energy regimes and provide a new type of hybrid physics to be explored. △ Less

Submitted 13 March, 2025; v1 submitted 24 February, 2025; originally announced February 2025.

Comments: 5 pages, 6 figures

Upper limit of spin relaxation in suspended graphene

Authors: Aron W. Cummings, Simon M. -M. Dubois, Pedro Alcázar Guerrero, Jean-Christophe Charlier, Stephan Roche

Abstract: We use a combination of molecular dynamics and quantum transport simulations to investigate the upper limit of spin transport in suspended graphene. We find that thermally-induced atomic-scale corrugations are the dominant factor, limiting spin lifetimes to ~10 ns by inducing a strongly-varying local spin-orbit coupling. These extremely short-range corrugations appear even when the height profile… ▽ More We use a combination of molecular dynamics and quantum transport simulations to investigate the upper limit of spin transport in suspended graphene. We find that thermally-induced atomic-scale corrugations are the dominant factor, limiting spin lifetimes to ~10 ns by inducing a strongly-varying local spin-orbit coupling. These extremely short-range corrugations appear even when the height profile appears to be smooth, suggesting they may be present in any graphene device. We discuss our results in the context of experiments, and briefly consider approaches to suppress these short-range corrugations and further enhance spin lifetimes in graphene-based spin devices. △ Less

Submitted 20 December, 2024; v1 submitted 14 December, 2024; originally announced December 2024.

Comments: 9 pages, 5 figures

Journal ref: Carbon 234, 119920 (2025)

2D Hexagonal Boron Nitride-based Anticorrosion Coatings

Authors: Onurcan Kaya, Luca Gabatel, Sebastiano Bellani, Fabrizio Barberis, Francesco Bonaccorso, Ivan Cole, Stephan Roche

Abstract: The corrosion of metallic surfaces poses significant challenges across industries such as petroleum, energy, and biomedical sectors, leading to structural degradation, safety risks, and substantial maintenance costs. Traditional organic and metallic coatings provide some protection, but their limited durability and susceptibility to harsh environmental conditions necessitate the development of mor… ▽ More The corrosion of metallic surfaces poses significant challenges across industries such as petroleum, energy, and biomedical sectors, leading to structural degradation, safety risks, and substantial maintenance costs. Traditional organic and metallic coatings provide some protection, but their limited durability and susceptibility to harsh environmental conditions necessitate the development of more advanced and efficient solutions. This has driven significant interest in two-dimensional (2D) materials, with graphene extensively studied for its exceptional mechanical strength and impermeability to gases and ions. However, while graphene offers short-term corrosion protection, its high electrical conductivity presents a long-term issue by promoting galvanic corrosion on metal surfaces. In contrast, hexagonal boron nitride (h-BN) has emerged as a promising alternative for anticorrosion coatings. h-BN combines exceptional chemical stability, impermeability, and electrical insulation, making it particularly suited for long-term protection in highly corrosive or high-temperature environments. While h-BN holds promise as anticorrosion material, challenges such as structural defects, agglomeration of nanosheets, and poor dispersion within coatings limit its performance. This review provides a comprehensive analysis of recent advancements in addressing these challenges, including novel functionalization strategies, scalable synthesis methods, and hybrid systems that integrate h-BN with complementary materials. By bridging the gap between fundamental research and industrial applications, this review outlines the potential for h-BN to revolutionize anticorrosion technologies. These obstacles necessitate advanced strategies such as surface functionalization to improve compatibility with polymer matrices and dispersion optimization to minimize agglomeration. △ Less

Submitted 27 March, 2025; v1 submitted 2 December, 2024; originally announced December 2024.

Comments: 33 pages, 4 figures

Artificial Intelligence-Assisted Workflow for Transmission Electron Microscopy: From Data Analysis Automation to Materials Knowledge Unveiling

Authors: Marc Botifoll, Ivan Pinto-Huguet, Enzo Rotunno, Thomas Galvani, Catalina Coll, Payam Habibzadeh Kavkani, Maria Chiara Spadaro, Yann-Michel Niquet, Martin Borstad Eriksen, Sara Marti-Sanchez, Georgios Katsaros, Giordano Scappucci, Peter Krogstrup, Giovanni Isella, Andreu Cabot, Gonzalo Merino, Pablo Ordejon, Stephan Roche, Vincenzo Grillo, Jordi Arbiol

Abstract: (Scanning) transmission electron microscopy ((S)TEM) has significantly advanced materials science but faces challenges in correlating precise atomic structure information with the functional properties of devices due to its time-intensive nature. To address this, we introduce an analytical workflow for the holistic characterization, modelling, and simulation of device heterostructures. This workfl… ▽ More (Scanning) transmission electron microscopy ((S)TEM) has significantly advanced materials science but faces challenges in correlating precise atomic structure information with the functional properties of devices due to its time-intensive nature. To address this, we introduce an analytical workflow for the holistic characterization, modelling, and simulation of device heterostructures. This workflow automates the experimental (S)TEM data analysis, providing an in-depth characterization of crystallographic information, 3D orientation, elemental composition, and strain distribution. It reduces a process that typically takes days for a trained human into an automatic routine solved in minutes. Utilizing a physics-guided artificial intelligence model, it generates representative descriptions of materials and samples. The workflow culminates in creating digital twins, 3D finite element and atomic models of millions of atoms, enabling simulations that provide crucial insights into device behaviour in practical applications. Demonstrated with SiGe planar heterostructures for scalable spin qubits, the workflow links digital twins to theoretical properties, revealing how atomic structure impacts materials and functional properties such as spatially-resolved phononic or electronic characteristics, or (inverse) spin orbit lengths. The versatility of our workflow is demonstrated through its application to a wide array of materials systems, device configurations, and sample morphologies. △ Less

Submitted 3 May, 2025; v1 submitted 1 November, 2024; originally announced November 2024.

Topologically Driven Spin-Orbit Torque in Dirac Matter

Authors: Joaquín Medina Dueñas, José H. García, Stephan Roche

Abstract: We unveil novel spin-orbit torque mechanisms driven by topological edge states in magnetic graphene-based devices. Within the energy gap, a damping-like torque plateau emerges within the quantum anomalous Hall phase upon breaking particle-hole symmetry, while for energies at the spin-split Dirac points located within the bands, a large damping-like torque develops as a result of a vanishing Fermi… ▽ More We unveil novel spin-orbit torque mechanisms driven by topological edge states in magnetic graphene-based devices. Within the energy gap, a damping-like torque plateau emerges within the quantum anomalous Hall phase upon breaking particle-hole symmetry, while for energies at the spin-split Dirac points located within the bands, a large damping-like torque develops as a result of a vanishing Fermi contour. Such torques are tunable by the degree of spin-pseudospin entanglement dictated by proximity-induced spin-orbit coupling terms. This additionally allows to reach the upper limit of charge-to-spin conversion in non-magnetic devices. △ Less

Submitted 29 August, 2024; originally announced August 2024.

A non-Hermitian loop for a quantum measurement

Authors: Luis E. F. Foa Torres, Stephan Roche

Abstract: Here we present a non-Hermitian framework for modeling state-vector collapse under unified dynamics described by Schrödinger's equation. Under the premise of non-Hermitian Hamiltonian dynamics, we argue that collapse has to occur when the Hamiltonian completes a closed loop in the parameter space encoding the interaction with the meter. For two-level systems, we put forward the phenomenon of chira… ▽ More Here we present a non-Hermitian framework for modeling state-vector collapse under unified dynamics described by Schrödinger's equation. Under the premise of non-Hermitian Hamiltonian dynamics, we argue that collapse has to occur when the Hamiltonian completes a closed loop in the parameter space encoding the interaction with the meter. For two-level systems, we put forward the phenomenon of chiral state conversion as a mechanism for effectively eliminating superpositions. This perspective opens a way to simulate quantum measurements in classical systems that up to now were restricted to the Schrödinger part of the quantum dynamics. △ Less

Submitted 29 May, 2025; v1 submitted 8 August, 2024; originally announced August 2024.

Comments: 8 pages, 1 figure

Real-Time Out-of-Equilibrium Quantum Dynamics in Disordered Materials

Authors: Luis M. Canonico, Stephan Roche, Aron W. Cummings

Abstract: We report a linear-scaling numerical method for exploring nonequilibrium electron dynamics in systems of arbitrary complexity. Based on the Chebyshev expansion of the time evolution of the single-particle density matrix, the method gives access to nonperturbative excitation and relaxation phenomena in models of disordered materials with sizes on the experimental scale. After validating the method… ▽ More We report a linear-scaling numerical method for exploring nonequilibrium electron dynamics in systems of arbitrary complexity. Based on the Chebyshev expansion of the time evolution of the single-particle density matrix, the method gives access to nonperturbative excitation and relaxation phenomena in models of disordered materials with sizes on the experimental scale. After validating the method by applying it to saturable optical absorption in clean graphene, we uncover that disorder can enhance absorption in graphene and that the interplay between light, anisotropy, and disorder in nanoporous graphene might be appealing for sensing applications. Beyond the optical properties of graphene-like materials, the method can be applied to a wide range of large-area materials and systems with arbitrary descriptions of defects and disorder. △ Less

Submitted 11 March, 2025; v1 submitted 23 July, 2024; originally announced July 2024.

Robust quantum engineering of current flow in carbon nanostructures at room temperature

Authors: Gaetano Calogero, Isaac Alcón, Onurcan Kaya, Nick Papior, Aron W. Cummings, Mads Brandbyge, Stephan Roche

Abstract: Bottom-up on-surface synthesis enables the fabrication of carbon nanostructures with atomic precision. Good examples are graphene nanoribbons (GNRs), 1D conjugated polymers, and nanoporous graphenes (NPGs), which are gathering increasing attention for future carbon nanoelectronics. A key step is the ability to manipulate current flow within these nanomaterials. Destructive quantum interference (QI… ▽ More Bottom-up on-surface synthesis enables the fabrication of carbon nanostructures with atomic precision. Good examples are graphene nanoribbons (GNRs), 1D conjugated polymers, and nanoporous graphenes (NPGs), which are gathering increasing attention for future carbon nanoelectronics. A key step is the ability to manipulate current flow within these nanomaterials. Destructive quantum interference (QI), long studied in the field of single-molecule electronics, has been proposed as the most effective way to achieve such control with molecular-scale precision. However, for practical applications, it is essential that such QI-engineering remains effective near or above room temperature. To assess this important point, here we combine large-scale molecular dynamics simulations and quantum transport calculations and focus our study on NPGs formed as arrays of laterally bonded GNRs. By considering various NPGs with different inter-GNR chemical connections we disentangle the different factors determining electronic transport in these carbon nanomaterials at 300 K. Our findings unequivocally demonstrate that QI survives at room temperature, with thermal vibrations weakly restricting current flow along GNRs while completely blocking transport across GNRs. Our results thus pave the way towards the future realization of QI-engineered carbon nanocircuitry operating at room temperature, which is a fundamental step towards carbon-based nanoelectronics and quantum technologies. △ Less

Submitted 11 July, 2024; originally announced July 2024.

Comments: 21 pages, 4 figures

Journal ref: Carbon, 234 (2025) 119950

Scaling of the Integrated Quantum Metric in Disordered Topological Phases

Authors: Jorge Martínez Romeral, Aron W. Cummings, Stephan Roche

Abstract: We report a study of a disorder-dependent real-space representation of the quantum geometry in topological systems. Thanks to the development of an efficient linear-scaling numerical methodology based on the kernel polynomial method, we can explore nontrivial behavior of the integrated quantum metric and Chern number in disordered systems with sizes reaching the experimental scale. We illustrate t… ▽ More We report a study of a disorder-dependent real-space representation of the quantum geometry in topological systems. Thanks to the development of an efficient linear-scaling numerical methodology based on the kernel polynomial method, we can explore nontrivial behavior of the integrated quantum metric and Chern number in disordered systems with sizes reaching the experimental scale. We illustrate this approach in the disordered Haldane model, examining the impact of Anderson disorder and vacancies on the trivial and topological phases captured by this model. △ Less

Submitted 16 April, 2025; v1 submitted 18 June, 2024; originally announced June 2024.

Comments: 6 pages, 3 figures

Journal ref: Phys. Rev. B 111, 134201 (2025)

Wavefunction collapse driven by non-Hermitian disturbance

Authors: Jorge Martinez Romeral, Luis E. F. Foa Torres, Stephan Roche

Abstract: In the context of the measurement problem, we propose to model the interaction between a quantum particle and an "apparatus" through a non-Hermitian Hamiltonian term. We simulate the time evolution of a normalized quantum state split into two spin components (via a Stern-Gerlach experiment) and that undergoes a wave-function collapse driven by a non-Hermitian Hatano-Nelson Hamiltonian. We further… ▽ More In the context of the measurement problem, we propose to model the interaction between a quantum particle and an "apparatus" through a non-Hermitian Hamiltonian term. We simulate the time evolution of a normalized quantum state split into two spin components (via a Stern-Gerlach experiment) and that undergoes a wave-function collapse driven by a non-Hermitian Hatano-Nelson Hamiltonian. We further analyze how the strength and other parameters of the non-Hermitian perturbation influence the time-to-collapse of the wave function obtained under a Schrödinger-type evolution. We finally discuss a thought experiment where manipulation of the apparatus could challenge standard quantum mechanics predictions. △ Less

Submitted 25 April, 2024; originally announced April 2024.

Comments: 5 pages, 4 figures

Giant Spin-Orbit Torque in Cr-based Janus Transition Metal Dichalcogenides

Authors: Libor Vojáček, Joaquín Medina Dueñas, Jing Li, Fatima Ibrahim, Aurélien Manchon, Stephan Roche, Mairbek Chshiev, José H. García

Abstract: We report a very large spin-orbit torque (SOT) capability of chromium-based transition metal dichalcogenides (TMD) in their Janus forms CrXTe, with X=S,Se. The structural inversion symmetry breaking, inherent to Janus structures is responsible for a large SOT response generated by giant Rashba splitting, equivalent to that obtained by applying a transverse electric field of… ▽ More We report a very large spin-orbit torque (SOT) capability of chromium-based transition metal dichalcogenides (TMD) in their Janus forms CrXTe, with X=S,Se. The structural inversion symmetry breaking, inherent to Janus structures is responsible for a large SOT response generated by giant Rashba splitting, equivalent to that obtained by applying a transverse electric field of $\sim 100 \,\text{V} \,\text{nm}^{-1}$ in non-Janus CrTe\textsubscript{2}, completely out of experimental reach. By performing transport simulations on custom-made Wannier tight-binding models, Janus systems are found to exhibit a SOT performance comparable to the most efficient two-dimensional materials, while allowing for field-free perpendicular magnetization switching owing to their reduced in-plane symmetry. Altogether, our findings evidence that magnetic Janus TMDs stand as suitable candidates for ultimate SOT-MRAM devices. △ Less

Submitted 23 April, 2024; originally announced April 2024.

Comments: 6 pages

Orbital Hall Responses in Disordered Topological Materials

Authors: Luis M. Canonico, Jose H. García, Stephan Roche

Abstract: We report an efficient numerical approach to compute the different components of the orbital Hall responses in disordered topological materials from the Berry phase theory of magnetization. The theoretical framework is based on the Chebyshev expansion of Green's functions and the off-diagonal elements of the position operator for systems under arbitrary boundary conditions. The capability of this… ▽ More We report an efficient numerical approach to compute the different components of the orbital Hall responses in disordered topological materials from the Berry phase theory of magnetization. The theoretical framework is based on the Chebyshev expansion of Green's functions and the off-diagonal elements of the position operator for systems under arbitrary boundary conditions. The capability of this scheme is shown by computing the orbital Hall conductivity for gapped graphene and the Haldane model in the presence of nonperturbative disorder effects. This methodology enables realistic simulations of orbital Hall responses in highly complex models of disordered materials. △ Less

Submitted 29 October, 2024; v1 submitted 2 April, 2024; originally announced April 2024.

Exploring Dielectric Properties in Models of Amorphous Boron Nitride

Authors: Thomas Galvani, Ali K. Hamze, Laura Caputo, Onurcan Kaya, Simon Dubois, Luigi Colombo, Viet-Hung Nguyen, Yongwoo Shin, Hyeon-Jin Shin, Jean-Christophe Charlier, Stephan Roche

Abstract: We report a theoretical study of dielectric properties of models of amorphous Boron Nitride, using interatomic potentials generated by machine learning. We first perform first-principles simulations on small (about $100$ atoms in the periodic cell) sample sizes to explore the emergence of mid-gap states and its correlation with structural features. Next, by using a simplified tight-binding electro… ▽ More We report a theoretical study of dielectric properties of models of amorphous Boron Nitride, using interatomic potentials generated by machine learning. We first perform first-principles simulations on small (about $100$ atoms in the periodic cell) sample sizes to explore the emergence of mid-gap states and its correlation with structural features. Next, by using a simplified tight-binding electronic model, we analyse the dielectric functions for complex three dimensional models (containing about $10.000$ atoms) embedding varying concentrations of ${\rm sp^{1}, sp^{2}}$ and ${\rm sp^3}$ bonds between B and N atoms. Within the limits of these methodologies, the resulting value of the zero-frequency dielectric constant is shown to be influenced by the population density of such mid-gap states and their localization characteristics. We observe nontrivial correlations between the structure-induced electronic fluctuations and the resulting dielectric constant values. Our findings are however just a first step in the quest of accessing fully accurate dielectric properties of as-grown amorphous BN of relevance for interconnect technologies and beyond. △ Less

Submitted 18 March, 2024; originally announced March 2024.

Comments: 27 pages, 10 figures

Amorphous Boron Nitride as an Ultrathin Copper Diffusion Barrier for Advanced Interconnects

Authors: Onurcan Kaya, Hyeongjoon Kim, Byeongkyu Kim, Thomas Galvani, Luigi Colombo, Mario Lanza, Hyeon-Jin Shin, Ivan Cole, Hyeon Suk Shin, Stephan Roche

Abstract: This study focuses on amorphous boron nitride ($\rm α$-BN) as a novel diffusion barrier for advanced semiconductor technology, particularly addressing the critical challenge of copper diffusion in back-end-of-line (BEOL) interconnects. Owing to its ultralow dielectric constant and robust barrier properties, $\rm α$-BN is examined as an alternative to conventional low-k dielectrics. The investigati… ▽ More This study focuses on amorphous boron nitride ($\rm α$-BN) as a novel diffusion barrier for advanced semiconductor technology, particularly addressing the critical challenge of copper diffusion in back-end-of-line (BEOL) interconnects. Owing to its ultralow dielectric constant and robust barrier properties, $\rm α$-BN is examined as an alternative to conventional low-k dielectrics. The investigation primarily employs theoretical modelling, using a Gaussian Approximation Potential, to simulate and understand the atomic-level interactions. This machine learning-based approach allows the performance of realistic simulations of amorphous structure of $\rm α$-BN, enabling the exploration of the impact of different film morphologies on barrier efficacy. Furthermore, we studied the electronic and optical properties of the films using a simple Tight-Binding model. In addition to the theoretical studies, we performed diffusion studies of copper through PECVD $\rm α$-BN on Si. The results from both the theoretical and experimental investigations highlight the potential of $\rm α$-BN as a highly effective diffusion barrier, suitable for integration in nanoelectronics. This research shows that $\rm α$-BN is a promising candidate for BEOL interconnects but also demonstrates the synergy of advanced computational models and experimental methods in material innovation for semiconductor applications. △ Less

Submitted 2 February, 2025; v1 submitted 2 February, 2024; originally announced February 2024.

Comments: 29 pages, 13 figures

Disorder-Induced Delocalization in Magic-Angle Twisted Bilayer Graphene

Authors: Pedro Alcázar Guerrero, Viet-Hung Nguyen, Jorge Martínez Romeral, Aron W. Cummings, José-Hugo Garcia, Jean-Christophe Charlier, Stephan Roche

Abstract: Flat bands in moiré systems are exciting new playgrounds for the generation and study of exotic many-body physics phenomena in low-dimensional materials. Such physics is attributed to the vanishing kinetic energy and strong spatial localization of the flat-band states. Here we use numerical simulations to examine the electronic transport properties of such flat bands in magic-angle twisted bilayer… ▽ More Flat bands in moiré systems are exciting new playgrounds for the generation and study of exotic many-body physics phenomena in low-dimensional materials. Such physics is attributed to the vanishing kinetic energy and strong spatial localization of the flat-band states. Here we use numerical simulations to examine the electronic transport properties of such flat bands in magic-angle twisted bilayer graphene in the presence of disorder. We find that while a conventional downscaling of the mean free path with increasing disorder strength occurs at higher energies, in the flat bands the mean free path can actually increase with increasing disorder strength.This phenomenon is also captured by the disorder-dependent quantum metric, which is directly linked to the ground state localization.This disorder-induced delocalization suggests that weak disorder may have a strong impact on the exotic physics of magic-angle bilayer graphene and other related moiré systems. △ Less

Submitted 13 March, 2025; v1 submitted 16 January, 2024; originally announced January 2024.

Comments: Main text: 7 pages, 4 figures. Sup .Mat.: 4 pages, 2 figures

Journal ref: Phys. Rev. Lett. 134, 126301 (2025)

Open-orbit induced low field extremely large magnetoresistance in graphene/h-BN superlattices

Authors: Zihao Wang, Pablo M. Perez-Piskunow, Calvin Pei Yu Wong, Matthew Holwill, Jiawei Liu, Wei Fu, Junxiong Hu, T Taniguchi, K Watanabe, Ariando Ariando, Lin Li, Kuan Eng Johnson Goh, Stephan Roche, Jeil Jung, Konstantin Novoselov, Nicolas Leconte

Abstract: We report intriguing and hitherto overlooked low-field room temperature extremely large magnetoresistance (XMR) patterns in graphene/hexagonal boron nitride (h-BN) superlattices that emerge due to the existence of open orbits within each miniband. This finding is set against the backdrop of the experimental discovery of the Hofstadter butterfly in moir superlattices, which has sparked considerable… ▽ More We report intriguing and hitherto overlooked low-field room temperature extremely large magnetoresistance (XMR) patterns in graphene/hexagonal boron nitride (h-BN) superlattices that emerge due to the existence of open orbits within each miniband. This finding is set against the backdrop of the experimental discovery of the Hofstadter butterfly in moir superlattices, which has sparked considerable interest in the fractal quantum Hall regime. To cope with the challenge of deciphering the low magnetic field dynamics of moir minibands, we utilize a novel semi-classical calculation method, grounded in zero-field Fermi contours, to predict the nontrivial behavior of the Landau-level spectrum. This is compared with fully quantum simulations, enabling an in-depth and contrasted analysis of transport measurements in high-quality graphene-hBN superlattices. Our results not only highlight the primary observation of the open-orbit induced XMR in this system but also shed new light on other intricate phenomena. These include the nuances of single miniband dynamics, evident through Lifshitz transitions, and the complex interplay of semiclassical and quantum effects between these minibands. Specifically, we document transport anomalies linked to trigonal warping, a semiclassical deviation from the expected linear characteristics of Landau levels, and magnetic breakdown phenomena indicative of quantum tunneling, all effects jointly contributing to the intricacies of a rich electronic landscape uncovered at low magnetic fields. △ Less

Submitted 12 December, 2023; originally announced December 2023.

Comments: 5 figures

Impact of Hydrogenation on the Stability and Mechanical Properties of Amorphous Boron Nitride

Authors: Onurcan Kaya, Luigi Colombo, Aleandro Antidormi, Marco A. Villena, Mario Lanza, Ivan Cole, Stephan Roche

Abstract: Interconnect materials with ultralow dielectric constant, and good thermal and mechanical properties are crucial for the further miniaturization of electronic devices. Recently, it has been demonstrated that ultrathin amorphous boron nitride (aBN) films have a very low dielectric constant, high density (above 2.1 g/cm3), high thermal stability, and mechanical properties. The excellent properties o… ▽ More Interconnect materials with ultralow dielectric constant, and good thermal and mechanical properties are crucial for the further miniaturization of electronic devices. Recently, it has been demonstrated that ultrathin amorphous boron nitride (aBN) films have a very low dielectric constant, high density (above 2.1 g/cm3), high thermal stability, and mechanical properties. The excellent properties of aBN derive from the nature and degree of disorder, which can be controlled at fabrication, allowing tuning of the physical properties for desired applications. Here, we report an improvement in the stability and mechanical properties of amorphous boron nitride upon hydrogen doping. With the introduction of a Gaussian approximation potential (GAP) for atomistic simulations, we investigate the changing morphology of amorphous boron nitride with varying H doping concentrations. We found that for 8 at% of H doping, the concentration of $sp^3$-hybridized atoms reaches a maximum which leads to an improvement of thermal stability and mechanical properties by 20%. These results will be a guideline for experimentalists and process engineers to tune the growth conditions of amorphous boron nitride films for numerous applications. △ Less

Submitted 22 December, 2023; v1 submitted 27 October, 2023; originally announced October 2023.

Comments: 15 pages, 7 figures

Resilient Intraparticle Entanglement and its Manifestation in Spin Dynamics of Disordered Dirac Materials

Authors: Jorge Martinez Romeral, Aron W. Cummings, Stephan Roche

Abstract: Topological quantum matter exhibits novel transport phenomena driven by entanglement between internal degrees of freedom, as for instance generated by spin-orbit coupling effects. Here we report on a direct connection between the mechanism driving spin relaxation and the intertwined dynamics between spin and sublattice degrees of freedom in disordered graphene. Beyond having a direct observable co… ▽ More Topological quantum matter exhibits novel transport phenomena driven by entanglement between internal degrees of freedom, as for instance generated by spin-orbit coupling effects. Here we report on a direct connection between the mechanism driving spin relaxation and the intertwined dynamics between spin and sublattice degrees of freedom in disordered graphene. Beyond having a direct observable consequence, such intraparticle entanglement is shown to be resilient to disorder, pointing towards a novel resource for quantum information processing. △ Less

Submitted 16 May, 2024; v1 submitted 27 October, 2023; originally announced October 2023.

Journal ref: Phys. Rev. B 109, 174313 (2024)

Giant Spin Transport Anisotropy in Magnetic Topological Insulators

Authors: Marc Vila, Aron W. Cummings, Stephan Roche

Abstract: We report on exceptionally long spin transport and giant spin lifetime anisotropy in the gapped surface states of three-dimensional (3D) magnetic topological insulators (MTIs). We examine the properties of these states using the Fu-Kane-Mele Hamiltonian in presence of a magnetic exchange field. The corresponding spin textures of surface states, which are well reproduced by an effective two-band mo… ▽ More We report on exceptionally long spin transport and giant spin lifetime anisotropy in the gapped surface states of three-dimensional (3D) magnetic topological insulators (MTIs). We examine the properties of these states using the Fu-Kane-Mele Hamiltonian in presence of a magnetic exchange field. The corresponding spin textures of surface states, which are well reproduced by an effective two-band model, hint at a considerable enhancement of the lifetime of out-of-plane spins compared to in-plane spins. This is confirmed by large-scale spin transport simulations for 3D MTIs with disorder. The energy dependence of the spin lifetime anisotropy arises directly from the nontrivial spin texture of the surface states, and is correlated with the onset of the quantum anomalous Hall phase. Our findings suggest novel spin filtering capabilities of the gapped surface MTI states, which could be explored by Hanle spin precession measurements. △ Less

Submitted 18 October, 2023; originally announced October 2023.

Comments: Any feedback is appreciated

Journal ref: Phys. Rev. B 109, 195435 (2024)

Emerging Spin-Orbit Torques in Low Dimensional Dirac Materials

Authors: Joaquín Medina Dueñas, José H. García, Stephan Roche

Abstract: We report a theoretical description of novel spin-orbit torque components emerging in two-dimensional Dirac materials with broken inversion symmetry. In contrast to usual metallic interfaces where field-like and damping-like torque components are competing, we find that an intrinsic damping-like torque which derives from all Fermi-sea electrons can be simultaneously enhanced along with the field-l… ▽ More We report a theoretical description of novel spin-orbit torque components emerging in two-dimensional Dirac materials with broken inversion symmetry. In contrast to usual metallic interfaces where field-like and damping-like torque components are competing, we find that an intrinsic damping-like torque which derives from all Fermi-sea electrons can be simultaneously enhanced along with the field-like component. Additionally, hitherto overlooked torque components unique to Dirac materials, emerge from the coupling between spin and pseudospin degrees of freedom. These torques are found to be resilient to disorder and could enhance the magnetic switching performance of nearby magnets. △ Less

Submitted 10 October, 2023; originally announced October 2023.

Spin-orbit torque emerging from orbital textures in centrosymmetric materials

Authors: Luis M. Canonico, Jose H. García, Stephan Roche

Abstract: We unveil a hitherto concealed spin-orbit torque mechanism driven by orbital degrees of freedom in centrosymmetric two-dimensional transition metal dichalcogenides (focusing on PtSe${}_2$ ). Using first-principles simulations, tight-binding models and large-scale quantum transport calculations, we show that such a mechanism fundamentally stems from a spatial localization of orbital textures at opp… ▽ More We unveil a hitherto concealed spin-orbit torque mechanism driven by orbital degrees of freedom in centrosymmetric two-dimensional transition metal dichalcogenides (focusing on PtSe${}_2$ ). Using first-principles simulations, tight-binding models and large-scale quantum transport calculations, we show that such a mechanism fundamentally stems from a spatial localization of orbital textures at opposite sides of the material, which imprints their symmetries onto spin-orbit coupling effects, further producing efficient and tunable spin-orbit torque. Our study suggests that orbital-spin entanglement at play in centrosymmetric materials can be harnessed as a resource for outperforming conventional spin-orbit torques generated by the Rashba-type effects. △ Less

Submitted 27 July, 2023; originally announced July 2023.

Tailoring giant quantum transport anisotropy in disordered nanoporous graphenes

Authors: Isaac Alcón, Aron Cummings, Stephan Roche

Abstract: During the last 15 years bottom-up on-surface synthesis has been demonstrated as an efficient way to synthesize carbon nanostructures with atomic precision, opening the door to unprecedented electronic control at the nanoscale. Nanoporous graphenes (NPGs) fabricated as two-dimensional arrays of graphene nanoribbons (GNRs) represent one of the key recent breakthroughs in the field. NPGs interesting… ▽ More During the last 15 years bottom-up on-surface synthesis has been demonstrated as an efficient way to synthesize carbon nanostructures with atomic precision, opening the door to unprecedented electronic control at the nanoscale. Nanoporous graphenes (NPGs) fabricated as two-dimensional arrays of graphene nanoribbons (GNRs) represent one of the key recent breakthroughs in the field. NPGs interestingly display in-plane transport anisotropy of charge carriers, and such anisotropy was shown to be tunable by modulating quantum interference. Herein, using large-scale quantum transport simulations, we show that electrical anisotropy in NPGs is not only resilient to disorder but can further be massively enhanced by its presence. This outcome paves the way to systematic engineering of quantum transport in NPGs as a novel concept for efficient quantum devices and architectures. △ Less

Submitted 21 July, 2023; originally announced July 2023.

Comments: 16 pages, 3 figures

Journal ref: Nanoscale Horiz. 9, 407-415 (2024)

Electrical Control of Spin-polarized Topological Currents in Monolayer WTe$_2$

Authors: Jose H. Garcia, Jinxuan You, Monica García-Mota, Peter Koval, Pablo Ordejón, Ramón Cuadrado, Matthieu J. Verstraete, Zeila Zanolli, Stephan Roche

Abstract: We evidence the possibility for coherent electrical manipulation of the spin orientation of topologically protected edge states in a low-symmetry quantum spin Hall insulator. By using a combination of ab-initio simulations, symmetry-based modeling, and large-scale calculations of the spin Hall conductivity, it is shown that small electric fields can efficiently vary the spin textures of edge curre… ▽ More We evidence the possibility for coherent electrical manipulation of the spin orientation of topologically protected edge states in a low-symmetry quantum spin Hall insulator. By using a combination of ab-initio simulations, symmetry-based modeling, and large-scale calculations of the spin Hall conductivity, it is shown that small electric fields can efficiently vary the spin textures of edge currents in monolayer 1T'-WTe2 by up to a 90-degree spin rotation, without jeopardizing their topological character. These findings suggest a new kind of gate-controllable spin-based device, topologically protected against disorder and of relevance for the development of topological spintronics. △ Less

Submitted 18 September, 2022; originally announced September 2022.

Generation and control of non-local chiral currents in graphene superlattices by orbital Hall effect

Authors: Juan Salvador-Sánchez, Luis M. Canonico, Ana Pérez-Rodríguez, Tarik P. Cysne, Yuriko Baba, Vito Clericò, Marc Vila, Daniel Vaquero, Juan Antonio Delgado-Notario, José M. Caridad, Kenji Watanabe, Takashi Taniguchi, Rafael A. Molina, Francisco Domínguez-Adame, Stephan Roche, Enrique Diez, Tatiana G. Rappoport, Mario Amado

Abstract: Graphene-based superlattices offer a new materials playground to exploit and control a higher number of electronic degrees of freedom, such as charge, spin, or valley for disruptive technologies. Recently, orbital effects, emerging in multivalley band structure lacking inversion symmetry, have been discussed as possible mechanisms for developing orbitronics. Here, we report non-local transport mea… ▽ More Graphene-based superlattices offer a new materials playground to exploit and control a higher number of electronic degrees of freedom, such as charge, spin, or valley for disruptive technologies. Recently, orbital effects, emerging in multivalley band structure lacking inversion symmetry, have been discussed as possible mechanisms for developing orbitronics. Here, we report non-local transport measurements in small gap hBN/graphene/hBN moiré superlattices which reveal very strong magnetic field-induced chiral response which is stable up to room temperature. The measured sign dependence of the non-local signal with respect to the magnetic field orientation clearly indicates the manifestation of emerging orbital magnetic moments. The interpretation of experimental data is well supported by numerical simulations, and the reported phenomenon stands as a formidable way of in-situ manipulation of the transverse flow of orbital information, that could enable the design of orbitronic devices. △ Less

Submitted 9 June, 2022; originally announced June 2022.

Comments: 5 pages, 5 figures and supplementary information

Towards Optimized Charge Transport in Multilayer Reduced Graphene Oxides

Authors: Mustafa Neset Cinar, Aleandro Antidormi, Viet-Hung Nguyen, Alessandro Kovtun, Samuel Lara Avila, Andrea Liscio, Jean-Christophe Charlier, Stephan Roche, Haldun Sevincli

Abstract: In the context of graphene-based composite applications, a complete understanding of charge conduction in multilayer reduced graphene oxides (rGO) is highly desirable. However, these rGO compounds are characterized by multiple and different sources of disorder depending on the chemical method used for their synthesis. Most importantly the precise role of interlayer interaction in promoting or jeop… ▽ More In the context of graphene-based composite applications, a complete understanding of charge conduction in multilayer reduced graphene oxides (rGO) is highly desirable. However, these rGO compounds are characterized by multiple and different sources of disorder depending on the chemical method used for their synthesis. Most importantly the precise role of interlayer interaction in promoting or jeopardizing electronic flow remains unclear. Here, thanks to the development of a multiscale computational approach combining first-principles calculations with large scale transport simulations, the transport scaling laws in multilayer rGO are unraveled, explaining why diffusion worsens with increasing film thickness. In contrast, contacted films are found to exhibit an opposite trend when the mean free path becomes shorter than the channel length, since conduction becomes predominantly driven by interlayer hopping. These predictions are favourably compared with experimental data and open a road towards the optimization of graphene-based composites with improved electrical conduction. △ Less

Submitted 31 January, 2022; originally announced January 2022.

Comments: 19 pages main text, 18 pages Supporting Information

Giant Valley-Polarized Spin Splittings in Magnetized Janus Pt Dichalcogenides

Authors: Shahid Sattar, J. Andreas Larsson, C. M. Canali, Stephan Roche, Jose H. Garcia

Abstract: We reveal giant proximity-induced magnetism and valley-polarization effects in Janus Pt dichalcogenides (such as SPtSe), when bound to the Europium oxide (EuO) substrate. Using first-principles simulations, it is surprisingly found that the charge redistribution, resulting from proximity with EuO, leads to the formation of two K and K$^{'}$valleys in the conduction bands. Each of these valleys dis… ▽ More We reveal giant proximity-induced magnetism and valley-polarization effects in Janus Pt dichalcogenides (such as SPtSe), when bound to the Europium oxide (EuO) substrate. Using first-principles simulations, it is surprisingly found that the charge redistribution, resulting from proximity with EuO, leads to the formation of two K and K$^{'}$valleys in the conduction bands. Each of these valleys displays its own spin polarization and a specific spin-texture dictated by broken inversion and time-reversal symmetries, and valley-exchange and Rashba splittings as large as hundreds of meV. This provides a platform for exploring novel spin-valley physics in low-dimensional semiconductors, with potential spin transport mechanisms such as spin-orbit torques much more resilient to disorder and temperature effects. △ Less

Submitted 11 January, 2022; originally announced January 2022.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 105, L041402 (2022)

Have Mysterious Topological Valley Currents Been Observed in Graphene Superlattices?

Authors: Stephan Roche, Stephen R. Power, Branislav K. Nikolić, José Hugo García, Antti-Pekka Jauho

Abstract: We provide a critical discussion concerning the claim of topological valley currents, driven by a global Berry curvature and valley Hall effect proposed in recent literature. After pointing out a major inconsistency of the theoretical scenario proposed to interpret giant nonlocal resistance, we discuss various possible alternative explanations and open directions of research to solve the mystery o… ▽ More We provide a critical discussion concerning the claim of topological valley currents, driven by a global Berry curvature and valley Hall effect proposed in recent literature. After pointing out a major inconsistency of the theoretical scenario proposed to interpret giant nonlocal resistance, we discuss various possible alternative explanations and open directions of research to solve the mystery of nonlocal transport in graphene superlattices. △ Less

Submitted 16 November, 2021; originally announced November 2021.

Comments: 3 pages, 1 figure

Van der Waals heterostructures for spintronics and opto-spintronics

Authors: Juan F. Sierra, Jaroslav Fabian, Roland K. Kawakami, Stephan Roche, Sergio O. Valenzuela

Abstract: The large variety of 2D materials and their co-integration in van der Waals (vdW) heterostructures enable innovative device engineering. In addition, their atomically-thin nature promotes the design of artificial materials by proximity effects that originate from short-range interactions. Such a designer approach is particularly compelling for spintronics, which typically harnesses functionalities… ▽ More The large variety of 2D materials and their co-integration in van der Waals (vdW) heterostructures enable innovative device engineering. In addition, their atomically-thin nature promotes the design of artificial materials by proximity effects that originate from short-range interactions. Such a designer approach is particularly compelling for spintronics, which typically harnesses functionalities from thin layers of magnetic and non-magnetic materials and the interfaces between them. Here, we overview recent progress on 2D spintronics and opto-spintronics using vdW heterostructures. After an introduction to the forefront of spin transport research, we highlight the unique spin-related phenomena arising from spin-orbit and magnetic proximity effects. We further describe the ability to create multi-functional hybrid heterostructures based on vdW materials, combining spin, valley and excitonic degrees of freedom. We end with an outlook on perspectives and challenges for the design and production of ultra-compact all-2D spin devices and their potential applications in conventional and quantum technologies. △ Less

Submitted 19 October, 2021; originally announced October 2021.

Comments: Review article. 39 pages, 5 figures, 2 tables. Full-text access at the SharedIt link https://rdcu.be/cpbSv

Journal ref: Nat. Nanotechnol.16, 856 (2021)

Magnetism, symmetry and spin transport in van der Waals layered systems

Authors: Hidekazu Kurebayashi, Jose H. Garcia, Safe Khan, Jairo Sinova, Stephan Roche

Abstract: The discovery of an ever increasing family of atomic layered magnetic materials, together with the already established vast catalogue of strong spin-orbit coupling (SOC) and topological systems, calls for some guiding principles to tailor and optimize novel spin transport and optical properties at their interfaces. Here we focus on the latest developments in both fields that have brought them clos… ▽ More The discovery of an ever increasing family of atomic layered magnetic materials, together with the already established vast catalogue of strong spin-orbit coupling (SOC) and topological systems, calls for some guiding principles to tailor and optimize novel spin transport and optical properties at their interfaces. Here we focus on the latest developments in both fields that have brought them closer together and make them ripe for future fruitful synergy. After outlining fundamentals on van der Waals (vdW) magnetism and SOC effects, we discuss how their coexistence, manipulation and competition could ultimately establish new ways to engineer robust spin textures and drive the generation and dynamics of spin current and magnetization switching in 2D materials-based vdW heterostructures. Grounding our analysis on existing experimental results and theoretical considerations, we draw a prospective analysis about how intertwined magnetism and spin-orbit torque (SOT) phenomena combine at interfaces with well-defined symmetries, and how this dictates the nature and figures-of-merit of SOT and angular momentum transfer. This will serve as a guiding role in designing future non-volatile memory devices that utilize the unique properties of 2D materials with the spin degree of freedom. △ Less

Submitted 12 October, 2021; v1 submitted 8 July, 2021; originally announced July 2021.

Comments: 26 pages, 5 figures, 1 table and 1 textbox

Valley-Polarized Quantum Anomalous Hall Phase in Bilayer Graphene with Layer-Dependent Proximity Effects

Authors: Marc Vila, Jose H. Garcia, Stephan Roche

Abstract: Realizations of some topological phases in two-dimensional systems rely on the challenge of jointly incorporating spin-orbit and magnetic exchange interactions. Here, we predict the formation and control of a fully valley-polarized quantum anomalous Hall effect in bilayer graphene, by separately imprinting spin-orbit and magnetic proximity effects in different layers. This results in varying spin… ▽ More Realizations of some topological phases in two-dimensional systems rely on the challenge of jointly incorporating spin-orbit and magnetic exchange interactions. Here, we predict the formation and control of a fully valley-polarized quantum anomalous Hall effect in bilayer graphene, by separately imprinting spin-orbit and magnetic proximity effects in different layers. This results in varying spin splittings for the conduction and valence bands, which gives rise to a topological gap at a single Dirac cone. The topological phase can be controlled by a gate voltage and switched between valleys by reversing the sign of the exchange interaction. By performing quantum transport calculations in disordered systems, the chirality and resilience of the valley-polarized edge state are demonstrated. Our findings provide a promising route to engineer a topological phase that could enable low-power electronic devices and valleytronic applications. △ Less

Submitted 22 October, 2021; v1 submitted 30 June, 2021; originally announced July 2021.

Comments: Final published version. PRB letter: https://journals.aps.org/prb/abstract/10.1103/PhysRevB.104.L161113

The 2021 Quantum Materials Roadmap

Authors: Feliciano Giustino, Jin Hong Lee, Felix Trier, Manuel Bibes, Stephen M Winter, Roser Valentí, Young-Woo Son, Louis Taillefer, Christoph Heil, Adriana I. Figueroa, Bernard Plaçais, QuanSheng Wu, Oleg V. Yazyev, Erik P. A. M. Bakkers, Jesper Nygård, Pol Forn-Diaz, Silvano De Franceschi, J. W. McIver, L. E. F. Foa Torres, Tony Low, Anshuman Kumar, Regina Galceran, Sergio O. Valenzuela, Marius V. Costache, Aurélien Manchon , et al. (4 additional authors not shown)

Abstract: In recent years, the notion of Quantum Materials has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and cold atom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topologi… ▽ More In recent years, the notion of Quantum Materials has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and cold atom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topological quantum matter, two-dimensional materials and their van der Waals heterostructures, Moire materials, Floquet time crystals, as well as materials and devices for quantum computation with Majorana fermions. In this Roadmap collection we aim to capture a snapshot of the most recent developments in the field, and to identify outstanding challenges and emerging opportunities. The format of the Roadmap, whereby experts in each discipline share their viewpoint and articulate their vision for quantum materials, reflects the dynamic and multifaceted nature of this research area, and is meant to encourage exchanges and discussions across traditional disciplinary boundaries. It is our hope that this collective vision will contribute to sparking new fascinating questions and activities at the intersection of materials science, condensed matter physics, device engineering, and quantum information, and to shaping a clearer landscape of quantum materials science as a new frontier of interdisciplinary scientific inquiry. △ Less

Submitted 4 February, 2021; originally announced February 2021.

Comments: 93 pages, 27 figures

Journal ref: J. Phys. Mater. 3 042006 (2020)

Hinge Spin Polarization in Magnetic Topological Insulators Revealed by Resistance Switch

Authors: Pablo M. Perez-Piskunow, Stephan Roche

Abstract: We report on the possibility to detect hinge spin polarization in magnetic topological insulators by resistance measurements. By implementing a three-dimensional model of magnetic topological insulators into a multi-terminal device with ferromagnetic contacts near the top surface, local spin features of the chiral edge modes are unveiled. We find local spin polarization at the hinges that inverts… ▽ More We report on the possibility to detect hinge spin polarization in magnetic topological insulators by resistance measurements. By implementing a three-dimensional model of magnetic topological insulators into a multi-terminal device with ferromagnetic contacts near the top surface, local spin features of the chiral edge modes are unveiled. We find local spin polarization at the hinges that inverts sign between top and bottom surfaces. At the opposite edge, the topological state with inverted spin polarization propagates in the reverse direction. Large resistance switch between forward and backward propagating states is obtained, driven by the matching between the spin polarized hinges and the ferromagnetic contacts. This feature is general to the ferromagnetic, antiferromagnetic and canted-antiferromagnetic phases, and enables the design of spin-sensitive devices, with the possibility of reversing the hinge spin polarization of the currents. △ Less

Submitted 7 March, 2021; v1 submitted 13 January, 2021; originally announced January 2021.

Comments: Main: 6 pages, 4 figures. Supplemental Material: 3 pages, 5 figures

Journal ref: Phys. Rev. Lett. 126, 167701 (2021)

Thermal Transport in Amorphous Graphene with Varying Structural Quality

Authors: Aleandro Antidormi, Luciano Colombo, Stephan Roche

Abstract: The synthesis of wafer-scale two-dimensional amorphous carbon monolayers has been recently demonstrated. This material presents useful properties when integrated as coating of metals, semiconductors or magnetic materials, such as enabling efficient atomic layer deposition and hence fostering the development of ultracompact technologies. Here we propose a characterization of how the structural degr… ▽ More The synthesis of wafer-scale two-dimensional amorphous carbon monolayers has been recently demonstrated. This material presents useful properties when integrated as coating of metals, semiconductors or magnetic materials, such as enabling efficient atomic layer deposition and hence fostering the development of ultracompact technologies. Here we propose a characterization of how the structural degree of amorphousness of such carbon membranes could be controlled by the crystal growth temperature. We also identify how energy is dissipated in this material by a systematic analysis of emerging vibrational modes whose localization increases with the loss of spatial symmetries, resulting in a tunable thermal conductivity varying by more than two orders of magnitude. Our simulations provide some recipe to design most suitable "amorphous graphene" based on the target applications such as ultrathin heat spreaders, energy harvesters or insulating thermal barriers. △ Less

Submitted 2 December, 2020; originally announced December 2020.

Comments: 35 pages

Journal ref: 2D Mater. 8 015028 (2021)

Graphene on two-dimensional hexagonal BN, AlN, and GaN: Electronic, spin-orbit, and spin relaxation properties

Authors: Klaus Zollner, Aron W. Cummings, Stephan Roche, Jaroslav Fabian

Abstract: We investigate the electronic structure of graphene on a series of 2D hexagonal nitride insulators hXN, X = B, Al, and Ga, with DFT calculations. A symmetry-based model Hamiltonian is employed to extract orbital parameters and spin-orbit coupling (SOC) from the low-energy Dirac bands of proximitized graphene. While commensurate hBN induces a staggered potential of about 10 meV into the Dirac bands… ▽ More We investigate the electronic structure of graphene on a series of 2D hexagonal nitride insulators hXN, X = B, Al, and Ga, with DFT calculations. A symmetry-based model Hamiltonian is employed to extract orbital parameters and spin-orbit coupling (SOC) from the low-energy Dirac bands of proximitized graphene. While commensurate hBN induces a staggered potential of about 10 meV into the Dirac bands, less lattice-matched hAlN and hGaN disrupt the Dirac point much less, giving a staggered gap below 100 $μ$eV. Proximitized intrinsic SOC surprisingly does not increase much above the pristine graphene value of 12 $μ$eV; it stays in the window of (1-16) $μ$eV, depending strongly on stacking. However, Rashba SOC increases sharply when increasing the atomic number of the boron group, with calculated maximal values of 8, 15, and 65 $μ$eV for B, Al, and Ga-based nitrides, respectively. The individual Rashba couplings also depend strongly on stacking, vanishing in symmetrically-sandwiched structures, and can be tuned by a transverse electric field. The extracted spin-orbit parameters were used as input for spin transport simulations based on Chebyshev expansion of the time-evolution of the spin expectation values, yielding interesting predictions for the electron spin relaxation. Spin lifetime magnitudes and anisotropies depend strongly on the specific (hXN)/graphene/hXN system, and they can be efficiently tuned by an applied external electric field as well as the carrier density in the graphene layer. A particularly interesting case for experiments is graphene/hGaN, in which the giant Rashba coupling is predicted to induce spin lifetimes of 1-10 ns, short enough to dominate over other mechanisms, and lead to the same spin relaxation anisotropy as observed in conventional semiconductor heterostructures: 50\%, meaning that out-of-plane spins relax twice as fast as in-plane spins. △ Less

Submitted 17 February, 2021; v1 submitted 30 November, 2020; originally announced November 2020.

Comments: 18 Pages, 12 Figures, 2 Tables

Journal ref: Phys. Rev. B 103, 075129 (2021)

Manipulation of Spin Transport in Graphene/Transition Metal Dichalcogenide Heterobilayers upon Twisting

Authors: Armando Pezo, Zeila Zanolli, Nils Wittemeier, Pablo Ordejon, Adalberto Fazzio, Stephan Roche, Jose H. Garcia

Abstract: Proximity effects are one of the pillars of exotic phenomena and technological applications of two dimensional materials. However, the interactions nature depends strongly on the materials involved, their crystalline symmetries, and interfacial properties. Here we used large-scale first-principle calculations to demonstrate that strain and twist-angle are efficient knobs to tailor the spin-orbit c… ▽ More Proximity effects are one of the pillars of exotic phenomena and technological applications of two dimensional materials. However, the interactions nature depends strongly on the materials involved, their crystalline symmetries, and interfacial properties. Here we used large-scale first-principle calculations to demonstrate that strain and twist-angle are efficient knobs to tailor the spin-orbit coupling in graphene transition metal dichalcogenide heterobilayers. We found that by choosing a twist-angle of 30 degrees, the spin relaxation times increase by two orders of magnitude, opening a path to improve these heterostructures spin transport capability. Moreover, we demonstrate that strain and twist angle will modify the relative values of valley-Zeeman and Rashba spin-orbit coupling, allowing to tune the system into an ideal Dirac-Rashba regime. These results enable us to envision an answer for the variability of spin-orbit coupling found in different experiments and have significant consequences for applications that depend on polycrystallinity, where grains form at different orientations. △ Less

Submitted 27 August, 2021; v1 submitted 12 November, 2020; originally announced November 2020.

Observation of giant and tuneable thermal diffusivity of Dirac fluid at room temperature

Authors: Alexander Block, Alessandro Principi, Niels C. H. Hesp, Aron W. Cummings, Matz Liebel, Kenji Watanabe, Takashi Taniguchi, Stephan Roche, Frank H. L. Koppens, Niek F. van Hulst, Klaas-Jan Tielrooij

Abstract: Conducting materials typically exhibit either diffusive or ballistic charge transport. However, when electron-electron interactions dominate, a hydrodynamic regime with viscous charge flow emerges (1-13). More stringent conditions eventually yield a quantum-critical Dirac-fluid regime, where electronic heat can flow more efficiently than charge (14-22). Here we observe heat transport in graphene i… ▽ More Conducting materials typically exhibit either diffusive or ballistic charge transport. However, when electron-electron interactions dominate, a hydrodynamic regime with viscous charge flow emerges (1-13). More stringent conditions eventually yield a quantum-critical Dirac-fluid regime, where electronic heat can flow more efficiently than charge (14-22). Here we observe heat transport in graphene in the diffusive and hydrodynamic regimes, and report a controllable transition to the Dirac-fluid regime at room temperature, using carrier temperature and carrier density as control knobs. We introduce the technique of spatiotemporal thermoelectric microscopy with femtosecond temporal and nanometre spatial resolution, which allows for tracking electronic heat spreading. In the diffusive regime, we find a thermal diffusivity of $\sim$2,000 cm$^2$/s, consistent with charge transport. Remarkably, during the hydrodynamic time window before momentum relaxation, we observe heat spreading corresponding to a giant diffusivity up to 70,000 cm$^2$/Vs, indicative of a Dirac fluid. These results are promising for applications such as nanoscale thermal management. △ Less

Submitted 28 December, 2020; v1 submitted 10 August, 2020; originally announced August 2020.

Journal ref: Nat. Nanotechnol. 16, 1195-1200 (2021)

Janus Monolayers of Magnetic Transition Metal Dichalcogenides as an All-in-One Platform for Spin-Orbit Torque

Authors: Idris Smaili, Slimane Laref, Jose H. Garcia, Udo Schwingenschlogl, Stephan Roche, Aurelien Manchon

Abstract: We theoretically predict that vanadium-based Janus dichalcogenide monolayers constitute an ideal platform for spin-orbit-torque memories. Using first principles calculations, we demonstrate that magnetic exchange and magnetic anisotropy energies are higher for heavier chalcogen atoms, while the broken inversion symmetry in the Janus form leads to the emergence of Rashba-like spin-orbit coupling. T… ▽ More We theoretically predict that vanadium-based Janus dichalcogenide monolayers constitute an ideal platform for spin-orbit-torque memories. Using first principles calculations, we demonstrate that magnetic exchange and magnetic anisotropy energies are higher for heavier chalcogen atoms, while the broken inversion symmetry in the Janus form leads to the emergence of Rashba-like spin-orbit coupling. The spin-orbit torque efficiency is evaluated using optimized quantum transport methodology and found to be comparable to heavy nonmagnetic metals. The coexistence of magnetism and spin-orbit coupling in such materials with tunable Fermi-level opens new possibilities for monitoring magnetization dynamics in the perspective of non-volatile magnetic random access memories. △ Less

Submitted 15 July, 2020; originally announced July 2020.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 104, 104415 (2021)

Canted Spin Texture and Quantum Spin Hall Effect in WTe2

Authors: Jose H. Garcia, Marc Vila, Chuang-Han Hsu, Xavier Waintal, Vitor M. Pereira, Stephan Roche

Abstract: We report an unconventional quantum spin Hall phase in the monolayer T$_\text{d}$-WTe$_2$, which exhibits hitherto unknown features in other topological materials. The low-symmetry of the structure induces a canted spin texture in the $yz$ plane, which dictates the spin polarization of topologically protected boundary states. Additionally, the spin Hall conductivity gets quantized ($2e^2/h$) with… ▽ More We report an unconventional quantum spin Hall phase in the monolayer T$_\text{d}$-WTe$_2$, which exhibits hitherto unknown features in other topological materials. The low-symmetry of the structure induces a canted spin texture in the $yz$ plane, which dictates the spin polarization of topologically protected boundary states. Additionally, the spin Hall conductivity gets quantized ($2e^2/h$) with a spin quantization axis parallel to the canting direction. These findings are based on large-scale quantum simulations of the spin Hall conductivity tensor and nonlocal resistances in multi-probe geometries using a realistic tight-binding model elaborated from first-principle methods. The observation of this canted quantum spin Hall effect, related to the formation of topological edge states with nontrivial spin polarization, demands for specific experimental design and suggests interesting alternatives for manipulating spin information in topological materials. △ Less

Submitted 10 July, 2020; originally announced July 2020.

Comments: For comments please contact [email protected]

Journal ref: Phys. Rev. Lett. 125, 256603 (2020)

Low-symmetry topological materials for large charge-to-spin interconversion: The case of transition metal dichalcogenide monolayers

Authors: Marc Vila, Chuang-Han Hsu, Jose H. Garcia, L. Antonio Benítez, Xavier Waintal, Sergio Valenzuela, Vitor M. Pereira, Stephan Roche

Abstract: The spin polarization induced by the spin Hall effect (SHE) in thin films typically points out of the plane. This is rooted on the specific symmetries of traditionally studied systems, not in a fundamental constraint. Recently, experiments on few-layer ${\rm MoTe}_2$ and ${\rm WTe}_2$ showed that the reduced symmetry of these strong spin-orbit coupling materials enables a new form of {\it canted}… ▽ More The spin polarization induced by the spin Hall effect (SHE) in thin films typically points out of the plane. This is rooted on the specific symmetries of traditionally studied systems, not in a fundamental constraint. Recently, experiments on few-layer ${\rm MoTe}_2$ and ${\rm WTe}_2$ showed that the reduced symmetry of these strong spin-orbit coupling materials enables a new form of {\it canted} spin Hall effect, characterized by concurrent in-plane and out-of-plane spin polarizations. Here, through quantum transport calculations on realistic device geometries, including disorder, we predict a very large gate-tunable SHE figure of merit $λ_sθ_{xy}\sim 1\text{--}50$ nm in ${\rm MoTe}_2$ and ${\rm WTe}_2$ monolayers that significantly exceeds values of conventional SHE materials. This stems from a concurrent long spin diffusion length ($λ_s$) and charge-to-spin interconversion efficiency as large as $θ_{xy} \approx 80$\%, originating from momentum-invariant (persistent) spin textures together with large spin Berry curvature along the Fermi contour, respectively. Generalization to other materials and specific guidelines for unambiguous experimental confirmation are proposed, paving the way towards exploiting such phenomena in spintronic devices. These findings vividly emphasize how crystal symmetry and electronic topology can govern the intrinsic SHE and spin relaxation, and how they may be exploited to broaden the range and efficiency of spintronic materials and functionalities. △ Less

Submitted 3 January, 2022; v1 submitted 4 July, 2020; originally announced July 2020.

Comments: Published version, Phys. Rev. Reserach

Journal ref: Phys. Rev. Reserach 3, 043230 (2021)

Emergence of Intra-Particle Entanglement and Time-Varying Violation of Bell's Inequality in Dirac Matter

Authors: Bruna Gabrielly de Moraes, Aron W. Cummings, Stephan Roche

Abstract: We demonstrate the emergence and dynamics of intra-particle entanglement in massless Dirac fermions. This entanglement, generated by spin-orbit coupling, arises between the spin and sublattice pseudospin of electrons in graphene. The entanglement is a complex dynamic quantity but is generally large, independent of the initial state. Its time dependence implies a dynamical violation of a Bell inequ… ▽ More We demonstrate the emergence and dynamics of intra-particle entanglement in massless Dirac fermions. This entanglement, generated by spin-orbit coupling, arises between the spin and sublattice pseudospin of electrons in graphene. The entanglement is a complex dynamic quantity but is generally large, independent of the initial state. Its time dependence implies a dynamical violation of a Bell inequality, while its magnitude indicates that large intra-particle entanglement is a general feature of graphene on a substrate. These features are also expected to impact entanglement between pairs of particles, and may be detectable in experiments that combine Cooper pair splitting with nonlocal measurements of spin-spin correlation in mesoscopic devices based on Dirac materials. △ Less

Submitted 1 August, 2020; v1 submitted 3 July, 2020; originally announced July 2020.

Comments: 6 pages, 3 figures

Journal ref: Phys. Rev. B 102, 041403 (2020)

Machine-Learning Interatomic Potentials Enable First-Principles Multiscale Modeling of Lattice Thermal Conductivity in Graphene/Borophene Heterostructures

Authors: Bohayra Mortazavi, Evgeny V. Podryabinkin, Stephan Roche, Timon Rabczuk, Xiaoying Zhuang, Alexander V. Shapeev

Abstract: One of the ultimate goals of computational modeling in condensed matter is to be able to accurately compute materials properties with minimal empirical information. First-principles approaches such as the density functional theory (DFT) provide the best possible accuracy on electronic properties but they are limited to systems up to a few hundreds, or at most thousands of atoms. On the other hand,… ▽ More One of the ultimate goals of computational modeling in condensed matter is to be able to accurately compute materials properties with minimal empirical information. First-principles approaches such as the density functional theory (DFT) provide the best possible accuracy on electronic properties but they are limited to systems up to a few hundreds, or at most thousands of atoms. On the other hand, classical molecular dynamics (CMD) simulations and finite element method (FEM) are extensively employed to study larger and more realistic systems, but conversely depend on empirical information. Here, we show that machine-learning interatomic potentials (MLIPs) trained over short ab-initio molecular dynamics trajectories enable first-principles multiscale modeling, in which DFT simulations can be hierarchically bridged to efficiently simulate macroscopic structures. As a case study, we analyze the lattice thermal conductivity of coplanar graphene/borophene heterostructures, recently synthesized experimentally (Sci. Adv. 2019; 5: eaax6444), for which no viable classical modeling alternative is presently available. Our MLIP-based approach can efficiently predict the lattice thermal conductivity of graphene and borophene pristine phases, the thermal conductance of complex graphene/borophene interfaces and subsequently enable the study of effective thermal transport along the heterostructures at continuum level. This work highlights that MLIPs can be effectively and conveniently employed to enable first-principles multiscale modeling via hierarchical employment of DFT/CMD/FEM simulations, thus expanding the capability for computational design of novel nanostructures. △ Less

Submitted 11 June, 2020; originally announced June 2020.

Journal ref: Materials Horizons 2020

Exploring Phononic Properties of Two-Dimensional Materials using Machine Learning Interatomic Potentials

Authors: Bohayra Mortazavi, Ivan S. Novikov, Evgeny V. Podryabinkin, Stephan Roche, Timon Rabczuk, Alexander V. Shapeev, Xiaoying Zhuang

Abstract: Phononic properties are commonly studied by calculating force constants using the density functional theory (DFT) simulations. Although DFT simulations offer accurate estimations of phonon dispersion relations or thermal properties, but for low-symmetry and nanoporous structures the computational cost quickly becomes very demanding. Moreover, the computational setups may yield nonphysical imaginar… ▽ More Phononic properties are commonly studied by calculating force constants using the density functional theory (DFT) simulations. Although DFT simulations offer accurate estimations of phonon dispersion relations or thermal properties, but for low-symmetry and nanoporous structures the computational cost quickly becomes very demanding. Moreover, the computational setups may yield nonphysical imaginary frequencies in the phonon dispersion curves, impeding the assessment of phononic properties and the dynamical stability of the considered system. Here, we compute phonon dispersion relations and examine the dynamical stability of a large ensemble of novel materials and compositions. We propose a fast and convenient alternative to DFT simulations which derived from machine-learning interatomic potentials passively trained over computationally efficient ab-initio molecular dynamics trajectories. Our results for diverse two-dimensional (2D) nanomaterials confirm that the proposed computational strategy can reproduce fundamental thermal properties in close agreement with those obtained via the DFT approach. The presented method offers a stable, efficient, and convenient solution for the examination of dynamical stability and exploring the phononic properties of low-symmetry and porous 2D materials. △ Less

Submitted 11 May, 2020; originally announced May 2020.

Journal ref: Applied Materials Today, 2020

Nonlocal Spin Dynamics in the Crossover from Diffusive to Ballistic Transport

Authors: Marc Vila, Jose H. Garcia, Aron W. Cummings, Stephen R. Power, Christoph W. Groth, Xavier Waintal, Stephan Roche

Abstract: Improved fabrication techniques have enabled the possibility of ballistic transport and unprecedented spin manipulation in ultraclean graphene devices. Spin transport in graphene is typically probed in a nonlocal spin valve and is analyzed using spin diffusion theory, but this theory is not necessarily applicable when charge transport becomes ballistic or when the spin diffusion length is exceptio… ▽ More Improved fabrication techniques have enabled the possibility of ballistic transport and unprecedented spin manipulation in ultraclean graphene devices. Spin transport in graphene is typically probed in a nonlocal spin valve and is analyzed using spin diffusion theory, but this theory is not necessarily applicable when charge transport becomes ballistic or when the spin diffusion length is exceptionally long. Here, we study these regimes by performing quantum simulations of graphene nonlocal spin valves. We find that conventional spin diffusion theory fails to capture the crossover to the ballistic regime as well as the limit of long spin diffusion length. We show that the latter can be described by an extension of the current theoretical framework. Finally, by covering the whole range of spin dynamics, our study opens a new perspective to predict and scrutinize spin transport in graphene and other two-dimensional material-based ultraclean devices. △ Less

Submitted 22 May, 2020; v1 submitted 14 October, 2019; originally announced October 2019.

Comments: 6 pages, 4 figures. Physical Review Letters

Journal ref: Phys. Rev. Lett. 124, 196602 (2020)

Valley Hall Effect and Non-Local Resistance in Locally Gapped Graphene

Authors: Thomas Aktor, Jose H. Garcia, Stephan Roche, Antti-Pekka Jauho, Stephen R. Power

Abstract: We report on the emergence of bulk, valley-polarized currents in graphene-based devices, driven by spatially varying regions of broken sublattice symmetry, and revealed by non-local resistance ($R_\mathrm{NL}$) fingerprints. By using a combination of quantum transport formalisms, giving access to bulk properties as well as multi-terminal device responses, the presence of a non-uniform local bandga… ▽ More We report on the emergence of bulk, valley-polarized currents in graphene-based devices, driven by spatially varying regions of broken sublattice symmetry, and revealed by non-local resistance ($R_\mathrm{NL}$) fingerprints. By using a combination of quantum transport formalisms, giving access to bulk properties as well as multi-terminal device responses, the presence of a non-uniform local bandgap is shown to give rise to valley-dependent scattering and a finite Fermi surface contribution to the valley Hall conductivity, related to characteristics of $R_\mathrm{NL}$. These features are robust against disorder and provide a plausible interpretation of controversial experiments in graphene/hBN superlattices. Our findings suggest both an alternative mechanism for the generation of valley Hall effect in graphene, and a route towards valley-dependent electron optics, by materials and device engineering. △ Less

Submitted 25 January, 2021; v1 submitted 1 October, 2019; originally announced October 2019.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 103, 115406 (2021)

Tunable room-temperature spin galvanic and spin Hall effects in van der Waals heterostructures

Authors: L. Antonio Benítez, Williams Savero Torres, Juan F. Sierra, Matias Timmermans, Jose H. Garcia, Stephan Roche, Marius V. Costache, Sergio O. Valenzuela

Abstract: Spin-orbit coupling stands as a powerful tool to interconvert charge and spin currents and to manipulate the magnetization of magnetic materials through the spin torque phenomena. However, despite the diversity of existing bulk materials and the recent advent of interfacial and low-dimensional effects, control of the interconvertion at room-temperature remains elusive. Here, we unequivocally demon… ▽ More Spin-orbit coupling stands as a powerful tool to interconvert charge and spin currents and to manipulate the magnetization of magnetic materials through the spin torque phenomena. However, despite the diversity of existing bulk materials and the recent advent of interfacial and low-dimensional effects, control of the interconvertion at room-temperature remains elusive. Here, we unequivocally demonstrate strongly enhanced room-temperature spin-to-charge (StC) conversion in graphene driven by the proximity of a semiconducting transition metal dichalcogenide(WS2). By performing spin precession experiments in properly designed Hall bars, we separate the contributions of the spin Hall and the spin galvanic effects. Remarkably, their corresponding conversion effiencies can be tailored by electrostatic gating in magnitude and sign, peaking nearby the charge neutrality point with a magnitude that is comparable to the largest efficiencies reported to date. Such an unprecedented electric-field tunability provides a new building block for spin generation free from magnetic materials and for ultra-compact magnetic memory technologies. △ Less

Submitted 21 August, 2019; originally announced August 2019.

Comments: 13 pages, 4 figures

Magnetic proximity in a van der Waals heterostructure of magnetic insulator and graphene

Authors: Bogdan Karpiak, Aron W. Cummings, Klaus Zollner, Marc Vila, Dmitrii Khokhriakov, Anamul Md Hoque, André Dankert, Peter Svedlindh, Jaroslav Fabian, Stephan Roche, Saroj P. Dash

Abstract: Engineering two-dimensional material heterostructures by combining the best of different materials in one ultimate unit can offer a plethora of opportunities in condensed matter physics. Here, in the van der Waals heterostructures of the ferromagnetic insulator Cr2Ge2Te6 and graphene, our observations indicate an out-of-plane proximity-induced ferromagnetic exchange interaction in graphene. The pe… ▽ More Engineering two-dimensional material heterostructures by combining the best of different materials in one ultimate unit can offer a plethora of opportunities in condensed matter physics. Here, in the van der Waals heterostructures of the ferromagnetic insulator Cr2Ge2Te6 and graphene, our observations indicate an out-of-plane proximity-induced ferromagnetic exchange interaction in graphene. The perpendicular magnetic anisotropy of Cr2Ge2Te6 results in significant modification of the spin transport and precession in graphene, which is ascribed to the proximity-induced exchange interaction. Furthermore, the observation of a larger lifetime for perpendicular spins in comparison to the in-plane counterpart suggests the creation of a proximity-induced anisotropic spin texture in graphene. Our experimental results and density functional theory calculations open up opportunities for the realization of proximity-induced magnetic interactions and spin filters in 2D material heterostructures and can form the basic building blocks for future spintronic and topological quantum devices. △ Less

Submitted 26 October, 2019; v1 submitted 15 August, 2019; originally announced August 2019.

Journal ref: 2D Mater. 7, 015026 (2020)

Universal spin diffusion length in polycrystalline graphene

Authors: Aron W. Cummings, Simon M. -M. Dubois, Jean-Christophe Charlier, Stephan Roche

Abstract: Graphene grown by chemical vapor deposition (CVD) is the most promising material for industrial-scale applications based on graphene monolayers. It also holds promise for spintronics; despite being polycrystalline, spin transport in CVD graphene has been measured over lengths up to 30 $μ$m, which is on par with the best measurements made in single-crystal graphene. These results suggest that grain… ▽ More Graphene grown by chemical vapor deposition (CVD) is the most promising material for industrial-scale applications based on graphene monolayers. It also holds promise for spintronics; despite being polycrystalline, spin transport in CVD graphene has been measured over lengths up to 30 $μ$m, which is on par with the best measurements made in single-crystal graphene. These results suggest that grain boundaries (GBs) in CVD graphene, while impeding charge transport, may have little effect on spin transport. However, to date very little is known about the true impact of disordered networks of GBs on spin relaxation. Here, by using first-principles simulations, we derive an effective tight-binding model of graphene GBs in the presence of spin-orbit coupling (SOC), which we then use to evaluate spin transport in realistic morphologies of polycrystalline graphene. The spin diffusion length is found to be independent of the grain size, and is determined only by the strength of the substrate-induced SOC. This result is consistent with the D'yakonov-Perel' mechanism of spin relaxation in the diffusive regime, but we find that it also holds in the presence of quantum interference. These results clarify the role played by GBs and demonstrate that the average grain size does not dictate the upper limit for spin transport in CVD-grown graphene, a result of fundamental importance for optimizing large-scale graphene-based spintronic devices. △ Less

Submitted 9 October, 2019; v1 submitted 30 July, 2019; originally announced July 2019.

Journal ref: Nano Lett. 19, 7418-7426 (2019)