-
Preferential orientation of NV defects in CVD diamond films grown on (113) substrates
Authors:
M. Lesik,
T. Plays,
A. Tallaire,
J. Achard,
O. Brinza,
L. William,
M. Chipaux,
L. Toraille,
T. Debuisschert,
A. Gicquel,
J. F. Roch,
V. Jacques
Abstract:
Thick CVD diamond layers were successfully grown on (113)-oriented substrates. They exhibited smooth surface morphologies and a crystalline quality comparable to (100) electronic grade material, and much better than (111)-grown layers. High growth rates (15-50 μm/h) were obtained while nitrogen doping could be achieved in a fairly wide range without seriously imparting crystalline quality. Electro…
▽ More
Thick CVD diamond layers were successfully grown on (113)-oriented substrates. They exhibited smooth surface morphologies and a crystalline quality comparable to (100) electronic grade material, and much better than (111)-grown layers. High growth rates (15-50 μm/h) were obtained while nitrogen doping could be achieved in a fairly wide range without seriously imparting crystalline quality. Electron spin resonance measurements were carried out to determine NV centers orientation and concluded that one specific orientation has an occurrence probability of 73 % when (100)-grown layers show an equal distribution in the 4 possible directions. A spin coherence time of around 270 μs was measured which is equivalent to that reported for material with similar isotopic purity. Although a higher degree of preferential orientation was achieved with (111)-grown layers (almost 100 %), the ease of growth and post-processing of the (113) orientation make it a potentially useful material for magnetometry or other quantum mechanical applications.
△ Less
Submitted 14 April, 2015; v1 submitted 8 April, 2015;
originally announced April 2015.
-
High nitrogen-vacancy density diamonds for magnetometry applications
Authors:
V. M. Acosta,
E. Bauch,
M. P. Ledbetter,
C. Santori,
K. -M. C. Fu,
P. E. Barclay,
R. G. Beausoleil,
H. Linget,
J. F. Roch,
F. Treussart,
S. Chemerisov,
W. Gawlik,
D. Budker
Abstract:
Nitrogen-vacancy (NV) centers in millimeter-scale diamond samples were produced by irradiation and subsequent annealing under varied conditions. The optical and spin relaxation properties of these samples were characterized using confocal microscopy, visible and infrared absorption, and optically detected magnetic resonance. The sample with the highest NV- concentration, approximately 16 ppm = 2…
▽ More
Nitrogen-vacancy (NV) centers in millimeter-scale diamond samples were produced by irradiation and subsequent annealing under varied conditions. The optical and spin relaxation properties of these samples were characterized using confocal microscopy, visible and infrared absorption, and optically detected magnetic resonance. The sample with the highest NV- concentration, approximately 16 ppm = 2.8 x 10^{18} cm^{-3}, was prepared with no observable traces of neutrally-charged vacancy defects. The effective transverse spin relaxation time for this sample was T2* = 118(48) ns, predominately limited by residual paramagnetic nitrogen which was determined to have a concentration of 52(7) ppm. Under ideal conditions, the shot-noise limited sensitivity is projected to be ~150 fT/\sqrt{Hz} for a 100 micron-scale magnetometer based on this sample. Other samples with NV- concentrations from .007 to 12 ppm and effective relaxation times ranging from 27 to 291 ns were prepared and characterized.
△ Less
Submitted 31 July, 2009; v1 submitted 19 March, 2009;
originally announced March 2009.
-
A new, enhanced diamond single photon emitter in the near infra-red
Authors:
Igor Aharonovich,
Chunyuan Zhou,
Alastair Stacey,
Julius Orwa,
David Simpson,
Andrew D. Greentree,
Francois Treussart,
Jean Francois Roch,
Steven Prawer
Abstract:
Individual color centers in diamond are promising for near-term quantum technologies including quantum key distribution and metrology. Here we show fabrication of a new color center which has photophysical properties surpassing those of the two main-stay centers, namely the nitrogen vacancy and NE8 centers. The new center is fabricated using focused ion beam implantation of nickel into isolated…
▽ More
Individual color centers in diamond are promising for near-term quantum technologies including quantum key distribution and metrology. Here we show fabrication of a new color center which has photophysical properties surpassing those of the two main-stay centers, namely the nitrogen vacancy and NE8 centers. The new center is fabricated using focused ion beam implantation of nickel into isolated chemical vapor deposited diamond micro-crystals. Room temperature photoluminescence studies reveal a narrow emission in the near infrared region centered at 768 nm with a lifetime as short as 2 ns. Its focused ion beam compatibility opens the prospect to fabrication with nanometer resolution and realization of integrated quantum photonic devices. Preliminary investigations suggest that this center arises from an as-yet uncharacterized nickel-silicon complex.
△ Less
Submitted 18 February, 2009;
originally announced February 2009.
