Showing 1–5 of 5 results for author: Riney, L

Observation of coexisting weak localization and superconducting fluctuations in strained Sn1-xInxTe thin films

Authors: Jiashu Wang, William Powers, Zhan Zhang, Michael Smith, Bradlee J. McIntosh, Seul-Ki Bac, Logan Riney, Maksym Zhukovskyi, Tatyana Orlova, Leonid P. Rokhinson, Yi-Ting Hsu, Xinyu Liu, Badih A. Assaf

Abstract: Topological superconductors have attracted tremendous excitement as they are predicted to host Majorana zero modes that can be utilized for topological quantum computing. Candidate topological superconductor Sn1-xInxTe thin films (0<x<0.3) grown by molecular beam epitaxy and strained in the (111) plane are shown to host three coexisting quantum effects: localization, antilocalization and supercond… ▽ More Topological superconductors have attracted tremendous excitement as they are predicted to host Majorana zero modes that can be utilized for topological quantum computing. Candidate topological superconductor Sn1-xInxTe thin films (0<x<0.3) grown by molecular beam epitaxy and strained in the (111) plane are shown to host three coexisting quantum effects: localization, antilocalization and superconducting fluctuations above the critical temperature Tc. An analysis of the normal state magnetoresistance reveals these effects. Weak localization is consistently observed in superconducting samples, indicating that superconductivity originates dominantly from trivial valence band states that may be strongly spin-orbit split. A large enhancement of the conductivity is observed above Tc, indicating that quantum coherent quasiparticle effects coexist with superconducting fluctuations. Our results motivate a re-examination of the debated pairing symmetry of this material when subjected to quantum confinement and lattice strain. △ Less

Submitted 2 December, 2021; originally announced December 2021.

Comments: Manuscript in review

Fermi level tuning and band alignment in Mn doped InAs/GaSb

Authors: Logan Riney, Joaquin Bermejo-Ortiz, Gauthier Krizman, Seul-Ki Bac, Jiashu Wang, Maksym Zhukovskyi, Tatyana Orlova, Louis Anne de Vaulchier, Yves Guldner, Roland Winkler, Jacek K. Furdyna, Xinyu Liu, Badih A. Assaf

Abstract: InAs/GaSb hosts a broken gap band alignment that has been shown to generate helical topological edge states. Upon the introduction of Mn into the structure, it has been predicted to host a quantized anomalous Hall effect. Here, we show that dilute Mn doping on InAs in InAs/GaSb, allows a tuning of the Fermi level, the introduction of paramagnetism, but also has a non-trivial impact on the band ali… ▽ More InAs/GaSb hosts a broken gap band alignment that has been shown to generate helical topological edge states. Upon the introduction of Mn into the structure, it has been predicted to host a quantized anomalous Hall effect. Here, we show that dilute Mn doping on InAs in InAs/GaSb, allows a tuning of the Fermi level, the introduction of paramagnetism, but also has a non-trivial impact on the band alignment of the system. The measurement of Shubnikov-de-Haas oscillations, cyclotron resonance, and a non-linear Hall effect in Mn-doped samples indicate the coexistence of a high mobility two-dimensional electron gas and a hole gas. Conversely, in undoped InAs/GaSb, pure-n-type transport is observed. We hypothesize that Mn acceptor levels can pin the Fermi energy near the valence band edge of InAs, far from the interface, which introduces a strong band bending to preserve the band offset at the InAs/GaSb interface. The realization of the QAHE in this structure will thus require a careful control of the band alignment to preserve topological insulating character. △ Less

Submitted 29 November, 2021; originally announced November 2021.

Topological response of the anomalous Hall effect in MnBi2Te4 due to magnetic canting

Authors: S. -K. Bac, K. Koller, F. Lux, J. Wang, L. Riney, K. Borisiak, W. Powers, M. Zhukovskyi, T. Orlova, M. Dobrowolska, J. K. Furdyna, N. R. Dilley, L. P. Rokhinson, Y. Mokrousov, R. J. McQueeney, O. Heinonen, X. Liu, B. A. Assaf

Abstract: Three-dimensional (3D) compensated MnBi2Te4 is antiferromagnetic, but undergoes a spin-flop transition at intermediate fields, resulting in a canted phase before saturation. In this work, we experimentally show that the anomalous Hall effect (AHE) in MnBi2Te4 originates from a topological response that is sensitive to the perpendicular magnetic moment and to its canting angle. Synthesis by molecul… ▽ More Three-dimensional (3D) compensated MnBi2Te4 is antiferromagnetic, but undergoes a spin-flop transition at intermediate fields, resulting in a canted phase before saturation. In this work, we experimentally show that the anomalous Hall effect (AHE) in MnBi2Te4 originates from a topological response that is sensitive to the perpendicular magnetic moment and to its canting angle. Synthesis by molecular beam epitaxy allows us to obtain a large-area quasi-3D 24-layer MnBi2Te4 with near-perfect compensation that hosts the phase diagram observed in bulk which we utilize to probe the AHE. This AHE is seen to exhibit an antiferromagnetic response at low magnetic fields, and a clear evolution at intermediate fields through surface and bulk spin-flop transitions into saturation. Throughout this evolution, the AHE is super-linear versus magnetization rather than the expected linear relationship. We reveal that this discrepancy is related to the canting angle, consistent with the symmetry of the crystal. Our findings suggests that novel topological responses may be found in non-collinear ferromagnetic, and antiferromagnetic phases. △ Less

Submitted 20 April, 2022; v1 submitted 29 March, 2021; originally announced March 2021.

Journal ref: npj Quantum Materials 7 46 (2022)

Introduction of Sr into Bi2Se3 thin films by molecular beam epitaxy

Authors: L. Riney, C. Bunker, S. -K. Bac, J. Wang, D. Battaglia, Yun Chang Park, M. Dobrowolska, J. K. Furdyna, X. Liu, B. A. Assaf

Abstract: SrxBi2Se3 is a candidate topological superconductor but its superconductivity requires the intercalation of Sr by into the van-der-Waals gaps of Bi2Se3. We report the synthesis of SrxBi2Se3 thin films by molecular beam epitaxy, and we characterize their structural, vibrational and electrical properties. X-ray diffraction and Raman spectroscopy show evidence of substitutional Sr alloying into the s… ▽ More SrxBi2Se3 is a candidate topological superconductor but its superconductivity requires the intercalation of Sr by into the van-der-Waals gaps of Bi2Se3. We report the synthesis of SrxBi2Se3 thin films by molecular beam epitaxy, and we characterize their structural, vibrational and electrical properties. X-ray diffraction and Raman spectroscopy show evidence of substitutional Sr alloying into the structure, while transport measurements allow us to correlate the increasing Sr content with an increased n-type doping, but do not reveal superconductivity down to 1.5K. Our results suggest that Sr predominantly occupies sites within a quintuple layer, simultaneously substituting for Bi and as an interstitial. Our results motivate future density functional studies to further investigate the energetics of Sr substitution into Bi2Se3. △ Less

Submitted 25 November, 2020; originally announced November 2020.

Weak antilocalization beyond the fully diffusive regime in Pb1-xSnxSe topological quantum wells

Authors: Jiashu Wang, X. Liu, C. Bunker, L. Riney, B. Qing, S. K. Bac, M. Zhukovskyi, T. Orlova, S. Rouvimov, M. Dobrowolska, J. K. Furdyna, B. A. Assaf

Abstract: We report the measurements and analysis of weak antilocalization (WAL) in Pb1-xSnxSe topological quantum wells in a new regime where the elastic scattering length is larger than the magnetic length. We achieve this regime through the development of high-quality epitaxy and doping of topological crystalline insulator (TCI) quantum wells. We obtain elastic scattering lengths that exceeds 100nm and b… ▽ More We report the measurements and analysis of weak antilocalization (WAL) in Pb1-xSnxSe topological quantum wells in a new regime where the elastic scattering length is larger than the magnetic length. We achieve this regime through the development of high-quality epitaxy and doping of topological crystalline insulator (TCI) quantum wells. We obtain elastic scattering lengths that exceeds 100nm and become comparable to the magnetic length. In this transport regime, the Hikami-Larkin-Nagaoka model is no longer valid. We employ the model of Wittmann and Schmid to extract the coherence time from the magnetoresistance. We find that despite our improved transport characteristics, the coherence time may be limited by scattering channels that are not strongly carrier dependent, such as electron-phonon or defect scattering. △ Less

Submitted 5 October, 2020; originally announced October 2020.

Comments: Accepted PRB