-
Tailoring nuclear spins order with defects: a Quantum Technology CAD study
Authors:
Gaetano Calogero,
Ioannis Deretzis,
Giuseppe Fisicaro,
Damiano Ricciarelli,
Rosario Gaetano Viglione,
Antonino La Magna
Abstract:
The full design of relevant systems for quantum applications, ranging from quantum simulation to sensing, is presented using a combination of atomistic methods. A prototypical system features a two-dimensional ordered distribution of spins interacting with out-of-plane spin drivers/probes. It could be realized in wide-bandgap semiconductors through open-volume point defects and functionalized surf…
▽ More
The full design of relevant systems for quantum applications, ranging from quantum simulation to sensing, is presented using a combination of atomistic methods. A prototypical system features a two-dimensional ordered distribution of spins interacting with out-of-plane spin drivers/probes. It could be realized in wide-bandgap semiconductors through open-volume point defects and functionalized surfaces with low Miller indexes. We study the case of defect electron spins (driver / probe) interacting via hyperfine coupling with $S=1/2$ nuclear spins of H atoms chemisorbed onto \hkl(001) and \hkl(111) 3C-SiC surfaces. We simulate the system fabrication processes with super lattice kinetic Monte Carlo, demonstrating that epitaxial growth under time-dependent conditions is a viable method for achieving controlled abundance or depletion of near-surface point defects. Quantum features are evaluated by means of extensive numerical analysis at a full quantum mechanical level based on calibrated models of interacting spin systems. This analysis includes both stationary (relative stability of ordered states) and time-dependent (protocols) conditions, achieved varying the model parameters (in our case the atomic structure and the external field). We identify a rich scenario of metastable spin-waves in the quantum simulation setting. The interaction between protocols and variable system configurations could hinder the effectiveness of the preparation/measurement phases.
△ Less
Submitted 28 May, 2025; v1 submitted 25 March, 2025;
originally announced March 2025.
-
Laser Annealed SiO2/Si1-xGex Scaffolds for Nanoscaled Devices, Synergy of Experiment and Computation
Authors:
Damiano Ricciarelli,
Jonas Müller,
Guilhem Larrieu,
Ioannis Deretzis,
Gaetano Calogero,
Enrico Martello,
Giuseppe Fisicaro,
Jean-Michel Hartmann,
Sébastien Kerdilès,
Mathieu Opprecht,
Antonio Massimiliano Mio,
Richard Daubriac,
Fuccio Cristiano,
Antonino La Magna
Abstract:
Ultraviolet nanosecond laser annealing (UV-NLA) proves to be an important technique, particularly when tightly controlled heating and melting are necessary. In the realm of semiconductor technologies, the significance of nanosecond laser annealing (NLA) grows in tandem with the escalating intricacy of integration schemes in nano-scaled devices. Silicon-germanium alloys have been studied for decade…
▽ More
Ultraviolet nanosecond laser annealing (UV-NLA) proves to be an important technique, particularly when tightly controlled heating and melting are necessary. In the realm of semiconductor technologies, the significance of nanosecond laser annealing (NLA) grows in tandem with the escalating intricacy of integration schemes in nano-scaled devices. Silicon-germanium alloys have been studied for decades for their compatibility with silicon devices. Indeed, they enable the manipulation of properties like strain, carrier mobilities and bandgap. In this framework, they can for instance boost the performances of p-type MOSFETs but also enable near infra-red absorption and emission for applications in photo-detection and photonics. Laser melting on such type of layers, however results, up to now, in the development of extended defects and poor control over layer morphology and homogeneity. In our study, we investigate the laser melting of ~700 nm thick relaxed silicon-germanium samples coated with SiO2 nano-arrays, observing the resulting material to maintain an unaltered lattice. We found the geometrical parameters of the silicon oxide having an impact on the thermal budget samples see, influencing melt threshold, melt depth and germanium distribution.
△ Less
Submitted 6 May, 2024; v1 submitted 18 March, 2024;
originally announced March 2024.
-
Local Coordination Modulates the Reflectivity of Liquefied Si-Ge Alloys
Authors:
Damiano Ricciarelli,
Ioannis Deretzis,
Gaetano Calogero,
Giuseppe Fisicaro,
Enrico Martello,
Antonino La Magna
Abstract:
The properties of liquid Si-Ge binary systems at melting conditions deviate from those expected by the ideal alloy approximation. Particularly, a non-linear dependence of the dielectric functions occurs with the reflectivity of liquid Si-Ge reaching a maximum at 50\% Ge content, being 10\% higher than in pure Si or Ge. Using \textit{ab initio} methodologies, we modelled liquefied Si-Ge alloys, unv…
▽ More
The properties of liquid Si-Ge binary systems at melting conditions deviate from those expected by the ideal alloy approximation. Particularly, a non-linear dependence of the dielectric functions occurs with the reflectivity of liquid Si-Ge reaching a maximum at 50\% Ge content, being 10\% higher than in pure Si or Ge. Using \textit{ab initio} methodologies, we modelled liquefied Si-Ge alloys, unveiling very high coordination numbers and poor symmetry in the first coordination shell with respect to Si and Ge, related to different bonding properties. We simulated optical functions, quantitatively replicating the aforementioned reflectivity trend and we highlighted a direct relationship between atomic structure and optical properties, indicating that the unusual optics arises from Si-Ge higher local coordination characterized by low symmetry. We forecast further implications for the overall class of these alloys. These findings expand our comprehension of liquefied semiconductors and are essential for implementing controlled laser melting procedures to highly dope these materials for advanced transistors, superconductors, sensors and plasmonic devices.
△ Less
Submitted 5 February, 2024; v1 submitted 26 October, 2023;
originally announced October 2023.
-
Atomistic insights into ultrafast SiGe nanoprocessing
Authors:
Gaetano Calogero,
Domenica Raciti,
Damiano Ricciarelli,
Pablo Acosta-Alba,
Fuccio Cristiano,
Richard Daubriac,
Remi Demoulin,
Ioannis Deretzis,
Giuseppe Fisicaro,
Jean-Michel Hartmann,
Sébastien Kerdilès,
Antonino La Magna
Abstract:
Controlling ultrafast material transformations with atomic precision is essential for future nanotechnology. Pulsed laser annealing (LA), inducing extremely rapid and localized phase transitions, is a powerful way to achieve this, but it requires careful optimization together with the appropriate system design. We present a multiscale LA computational framework able to simulate atom-by-atom the hi…
▽ More
Controlling ultrafast material transformations with atomic precision is essential for future nanotechnology. Pulsed laser annealing (LA), inducing extremely rapid and localized phase transitions, is a powerful way to achieve this, but it requires careful optimization together with the appropriate system design. We present a multiscale LA computational framework able to simulate atom-by-atom the highly out-of-equilibrium kinetics of a material as it interacts with the laser, including effects of structural disorder. By seamlessly coupling a macroscale continuum solver to a nanoscale super-lattice Kinetic Monte Carlo code, this method overcomes the limits of state-of-the-art continuum-based tools. We exploit it to investigate nontrivial changes in composition, morphology and quality of laser-annealed SiGe alloys. Validations against experiments and phase-field simulations, as well as advanced applications to strained, defected, nanostructured and confined SiGe are presented, highlighting the importance of a multiscale atomistic-continuum approach. Current applicability and potential generalization routes are finally discussed.
△ Less
Submitted 6 September, 2023;
originally announced September 2023.
-
Impact of surface reflectivity on the ultra-fast laser melting of silicon-germanium alloys
Authors:
Damiano Ricciarelli,
Giovanni Mannino,
Ioannis Deretzis,
Gaetano Calogero,
Giuseppe Fisicaro,
Richard Daubriac,
Remi Demoulin,
Fuccio Cristiano,
Pawel P. Michalowski,
Pablo Acosta-Alba,
Jean-Michel Hartmann,
Sébastien Kerdilès,
Antonino La Magna
Abstract:
Ultraviolet nanosecond laser annealing (LA) is a powerful tool where strongly confined heating and melting are desirable. In semiconductor technologies the importance of LA increases with the increasing complexity of the proposed integration schemes. Optimizing the LA process along with the experimental design is challenging, especially when complex 3D nanostructured systems with various shapes an…
▽ More
Ultraviolet nanosecond laser annealing (LA) is a powerful tool where strongly confined heating and melting are desirable. In semiconductor technologies the importance of LA increases with the increasing complexity of the proposed integration schemes. Optimizing the LA process along with the experimental design is challenging, especially when complex 3D nanostructured systems with various shapes and phases are involved. Within this context, reliable simulations of laser melting are required for optimizing the process parameters while reducing the number of experimental tests. This gives rise to a virtual Design of Experiments (DoE). $Si_{1-x}Ge_{x}$ alloys are nowadays used for their compatibility with silicon devices enabling to engineer properties such as strain, carrier mobilities and bandgap. In this work, the laser melting process of relaxed and strained $Si_{1-x}Ge_{x}$ is simulated with a finite element method / phase field approach. Particularly, we calibrated the dielectric functions of the alloy for its crystalline and liquid phase using experimental data. We highlighted the importance of reproducing the exact reflectivity of the interface between air and the material in its different aggregation states, to correctly mimic the process. We indirectly discovered intriguing features on the optical behavior of melt silicon-germanium.
△ Less
Submitted 8 September, 2023; v1 submitted 28 March, 2023;
originally announced March 2023.
