A Taylor Series Approximation Model for Characterizing the Output Resistance of a GFET
Authors:
Xiomara Ribero-Figueroa,
Anibal Pacheco-Sanchez,
Tzu-Jung Huang,
David Jiménez,
Ivan Puchades,
Reydezel Torres-Torres
Abstract:
The mobility-degradation-based model for the drain-to-source or output resistance of a graphene field-effect-transistor is linearized here using a Taylor series approximation. This simplification is shown to be valid from magnitudes of the gate voltage not significantly higher than the Dirac voltage, and it enables the analytical determination of the transconductance parameter, the voltage related…
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The mobility-degradation-based model for the drain-to-source or output resistance of a graphene field-effect-transistor is linearized here using a Taylor series approximation. This simplification is shown to be valid from magnitudes of the gate voltage not significantly higher than the Dirac voltage, and it enables the analytical determination of the transconductance parameter, the voltage related to residual charges, and a bias-independent series resistance of the GFET. Furthermore, a continuous representation of the device's static response is achieved when substituting the extracted parameters into the model, regardless the transfer characteristic symmetry with respect to the Dirac voltage.
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Submitted 12 June, 2025;
originally announced June 2025.
Characterization of the Intrinsic and Extrinsic Resistances of a Microwave Graphene FET Under Zero Transconductance Conditions
Authors:
Xiomara Ribero-Figueroa,
Anibal Pacheco-Sanchez,
Aida Mansouri,
Pankaj Kumar,
Omid Habibpour,
Herbert Zirath,
Roman Sordan,
Francisco Pasadas,
David Jiménez,
Reydezel Torres-Torres
Abstract:
Graphene field-effect transistors exhibit negligible transconductance under two scenarios: for any gate-to-source voltage when the drain-to-source voltage is set to zero, and for an arbitrary drain-to-source voltage provided that the gate-to-source voltage equals the Dirac voltage. Hence, extracting the channel and the parasitic series resistances from S-parameters under these conditions enables a…
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Graphene field-effect transistors exhibit negligible transconductance under two scenarios: for any gate-to-source voltage when the drain-to-source voltage is set to zero, and for an arbitrary drain-to-source voltage provided that the gate-to-source voltage equals the Dirac voltage. Hence, extracting the channel and the parasitic series resistances from S-parameters under these conditions enables analyzing their dependence on the gate and drain biases. This is fundamental to assess the portion of the output resistance that is controlled by the gate. Besides, the drain bias dependence of the drain and source resistances is also evidenced. Within the proposal, resistive components accounting for the lossy nature of the gate capacitance are incorporated into the model, which exhibits a broadband correlation with experimental data. This avoids the series resistances to be considered as frequency dependent in the model.
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Submitted 15 September, 2023;
originally announced September 2023.
