-
Twist-Angle-Controlled Anomalous Gating in Bilayer Graphene/BN Heterostructures
Authors:
G. Maffione,
L. S. Farrar,
M. Kapfer,
K. Watanabe,
T. Taniguchi,
H. Aubin,
D. Mailly,
R. Ribeiro-Palau
Abstract:
Anomalous gating effects-such as gate ineffectiveness and pronounced hysteresis-have been observed in graphene-based systems encapsulated in boron nitride (BN) and linked to a possible ferroelectric state. However, their origin, stability, and reproducibility remain under debate. Here, we present charge transport experiments in dual-gated, dynamically rotatable van der Waals heterostructures based…
▽ More
Anomalous gating effects-such as gate ineffectiveness and pronounced hysteresis-have been observed in graphene-based systems encapsulated in boron nitride (BN) and linked to a possible ferroelectric state. However, their origin, stability, and reproducibility remain under debate. Here, we present charge transport experiments in dual-gated, dynamically rotatable van der Waals heterostructures based on bilayer graphene encapsulated in BN. Remarkably, the angular degree of freedom acts as an ON/OFF switch for the anomalous gating response. We show that the angular alignment between the two BN layers -- not the presence of a moiré superlattice with graphene -- is the key parameter governing these effects. The relevant alignment between the two BN layers, to observe the anomalous gating effect at room temperature, lies between 15 deg and 45 deg, with no evidence of the expected 60 deg periodicity. Both gate ineffectiveness and hysteresis are highly sensitive to small angular changes, which we classify into three distinct regimes. Our results clarify the conditions necessary to reproduce these phenomena and pave the way for theoretical investigation of their microscopic origins.
△ Less
Submitted 5 June, 2025;
originally announced June 2025.
-
Thermal transport mapping in twisted double bilayer graphene
Authors:
Jean Spièce,
Roop Kumar Mech,
Alessandra Canetta,
Rebeca Ribeiro-Palau,
Oleg Kolosov,
Pascal Gehring
Abstract:
Two-dimensional (2D) materials have attracted significant interest due to their tunable physical properties when stacked into heterostructures. Twisting adjacent layers introduces moire patterns that strongly influence the material's electronic and thermal behavior. In twisted graphene systems, the twist angle critically alters phonon transport, leading to reduced thermal conductivity compared to…
▽ More
Two-dimensional (2D) materials have attracted significant interest due to their tunable physical properties when stacked into heterostructures. Twisting adjacent layers introduces moire patterns that strongly influence the material's electronic and thermal behavior. In twisted graphene systems, the twist angle critically alters phonon transport, leading to reduced thermal conductivity compared to Bernal-stacked configurations. However, experimental investigations into thermal transport in twisted structures remain limited. Here, we study the local thermal properties of twisted double bilayer graphene (TDBG) using Scanning Thermal Microscopy (SThM). We find a reduction in thermal resistance of 0.3 +/- 0.1 x 10^6 K W^-1 compared to untwisted bilayers, attributed to changes in both intrinsic thermal conductivity and the tip-sample interface. These results, supported by analytical modeling, provide new insight into thermal transport mechanisms in twisted 2D systems and offer a pathway toward thermal engineering in twistronic devices.
△ Less
Submitted 19 May, 2025;
originally announced May 2025.
-
Impact of the angular alignment on the crystal field and intrinsic doping of bilayer graphene/BN heterostructures
Authors:
L. S. Farrar,
G. Maffione,
V. -H. Nguyen,
K. Watanabe,
T. Taniguchi,
J. -Ch. Charlier,
D. Mailly,
R. Ribeiro-Palau
Abstract:
The ability to tune the energy gap in bilayer graphene makes it the perfect playground for the study of the effects of internal electric fields, such as the crystalline field, which are developed \Reb{when other layered materials are deposited on top of it}. Here, we introduce a novel device architecture allowing a simultaneous control over the applied displacement field and the crystalline alignm…
▽ More
The ability to tune the energy gap in bilayer graphene makes it the perfect playground for the study of the effects of internal electric fields, such as the crystalline field, which are developed \Reb{when other layered materials are deposited on top of it}. Here, we introduce a novel device architecture allowing a simultaneous control over the applied displacement field and the crystalline alignment between two materials. Our experimental and numerical results confirm that the crystal field and electrostatic doping due to the interface reflect the 120$^{\circ}$ symmetry of the bilayer graphene/BN heterostructure and are highly affected by the commensurate state. These results provide an unique insight into the role of twist angle in the development of internal crystal fields and intrinsic electrostatic doping in heterostructures. Our results highlight the importance of layer alignment, beyond the existence of a moiré superlattice, to understand the intrinsic properties of a heterostructure.
△ Less
Submitted 15 February, 2025; v1 submitted 2 October, 2024;
originally announced October 2024.
-
Quantifying the local mechanical properties of twisted double bilayer graphene
Authors:
Alessandra Canetta,
Sergio Gonzalez-Munoz,
Viet-Hung Nguyen,
Khushboo Agarwal,
Pauline de Crombrugghe de Picquendaele,
Yuanzhuo Hong,
Sambit Mohapatra,
Kenji Watanabe,
Takashi Taniguchi,
Bernard Nysten,
Benoît Hackens,
Rebeca Ribeiro-Palau,
Jean-Christophe Charlier,
Oleg Kolosov,
Jean Spièce,
Pascal Gehring
Abstract:
Nanomechanical measurements of minimally twisted van der Waals materials remained elusive despite their fundamental importance for device realisation. Here, we use Ultrasonic Force Microscopy (UFM) to locally quantify the variation of out-of-plane Young's modulus in minimally twisted double bilayer graphene (TDBG). We reveal a softening of the Young's modulus by 7\% and 17\% along single and doubl…
▽ More
Nanomechanical measurements of minimally twisted van der Waals materials remained elusive despite their fundamental importance for device realisation. Here, we use Ultrasonic Force Microscopy (UFM) to locally quantify the variation of out-of-plane Young's modulus in minimally twisted double bilayer graphene (TDBG). We reveal a softening of the Young's modulus by 7\% and 17\% along single and double domain walls, respectively. Our experimental results are confirmed by force-field relaxation models. This study highlights the strong tunability of nanomechanical properties in engineered twisted materials, and paves the way for future applications of designer 2D nanomechanical systems.
△ Less
Submitted 21 May, 2024;
originally announced May 2024.
-
Paramagnetic singularities of the orbital magnetism in graphene with a moiré potential
Authors:
J. Vallejo Bustamante,
R. Ribeiro-Palau,
C. Fermon,
M. Pannetier-Lecoeur K. Watanabe,
T. Tanigushi,
R. Deblock,
S. Guéron,
M. Ferrier,
J. N. Fuchs,
G. Montambaux,
F. Piéchon,
H. Bouchiat
Abstract:
The recent detection of the singular diamagnetism of Dirac electrons in a single graphene layer paved a new way of probing 2D quantum materials through the measurement of equilibrium orbital currents which cannot be accessed in usual transport experiments. Among the theoretical predictions is an intriguing orbital paramagnetism at saddle points of the dispersion relation. Here we present magnetisa…
▽ More
The recent detection of the singular diamagnetism of Dirac electrons in a single graphene layer paved a new way of probing 2D quantum materials through the measurement of equilibrium orbital currents which cannot be accessed in usual transport experiments. Among the theoretical predictions is an intriguing orbital paramagnetism at saddle points of the dispersion relation. Here we present magnetisation measurements in graphene monolayers aligned on hexagonal boron nitride (hBN)crystals. Beside the sharp diamagnetic McClure response at the Dirac point, we detect extra diamagnetic singularities at the satellite Dirac points (sDP) of the moiré lattice. Surrounding these diamagnetic satellite peaks, we also observe paramagnetic peaks located at the chemical potential of the saddle points of the Graphene moiré band structure and relate them to the presence of van Hove logarithmic singularities in the density of states. These findings reveal the long ago predicted anomalous paramagnetic orbital response in 2D systems when the Fermi energy is tuned to the vicinity of saddle points.
△ Less
Submitted 1 April, 2023; v1 submitted 30 March, 2023;
originally announced March 2023.
-
Non-identical moiré twins in bilayer graphene
Authors:
E. Arrighi,
V. -H. Nguyen,
M. Di Luca,
G. Maffione,
Y. Hong,
L. Farrar,
K. Watanabe,
T. Taniguchi,
D. Mailly,
J. -C. Charlier,
R. Ribeiro-Palau
Abstract:
The superlattice obtained by aligning a monolayer graphene and boron nitride (BN) inherits from the hexagonal lattice a sixty degrees periodicity with the layer alignment. It implies that, in principle, the properties of the heterostructure must be identical for 0$^{\circ}$ and 60$^{\circ}$ of layer alignment. Here, we demonstrate, using dynamically rotatable van der Waals heterostructures, that t…
▽ More
The superlattice obtained by aligning a monolayer graphene and boron nitride (BN) inherits from the hexagonal lattice a sixty degrees periodicity with the layer alignment. It implies that, in principle, the properties of the heterostructure must be identical for 0$^{\circ}$ and 60$^{\circ}$ of layer alignment. Here, we demonstrate, using dynamically rotatable van der Waals heterostructures, that the moiré superlattice formed in a bilayer graphene/BN has different electronic properties at 0$^{\circ}$ and 60$^{\circ}$ of alignment. Although the existence of these non-identical moiré twins is explained by different relaxation of the atomic structures for each alignment, the origin of the observed valley Hall effect remains to be explained. A simple Berry curvature argument do not hold to explain the hundred and twenty degrees periodicity of this observation. Our results highlight the complexity of the interplay between mechanical and electronic properties on moiré structure and the importance of taking into account atomic structure relaxation to understand its electronic properties.
△ Less
Submitted 12 July, 2023; v1 submitted 3 May, 2022;
originally announced May 2022.
-
Heat equilibration of integer and fractional quantum Hall edge modes in graphene
Authors:
Gaëlle Le Breton,
Raphaëlle Delagrange,
Yuanzhuo Hong,
Manjari Garg,
Kenji Watanabe,
Takashi Taniguchi,
Rebeca Ribeiro-Palau,
Preden Roulleau,
Patrice Roche,
François D. Parmentier
Abstract:
Hole-conjugate states of the fractional quantum Hall effect host counter-propagating edge channels which are thought to exchange charge and energy. These exchanges have been the subject of extensive theoretical and experimental works; in particular, it is yet unclear if the presence of integer quantum Hall edge channels stemming from fully filled Landau levels affects heat equilibration along the…
▽ More
Hole-conjugate states of the fractional quantum Hall effect host counter-propagating edge channels which are thought to exchange charge and energy. These exchanges have been the subject of extensive theoretical and experimental works; in particular, it is yet unclear if the presence of integer quantum Hall edge channels stemming from fully filled Landau levels affects heat equilibration along the edge. In this letter, we present heat transport measurements in quantum Hall states of graphene demonstrating that the integer channels can strongly equilibrate with the fractional ones, leading to markedly different regimes of quantized heat transport that depend on edge electrostatics. Our results allow for a better comprehension of the complex edge physics in the fractional quantum Hall regime.
△ Less
Submitted 8 September, 2022; v1 submitted 27 April, 2022;
originally announced April 2022.
-
High quality electrostatically defined hall bars in monolayer graphene
Authors:
Rebeca Ribeiro-Palau,
Shaowen Chen,
Yihang Zeng,
Kenji Watanabe,
Takashi Taniguchi,
James Hone,
Cory R. Dean
Abstract:
Realizing graphene's promise as an atomically thin and tunable platform for fundamental studies and future applications in quantum transport requires the ability to electrostatically define the geometry of the structure and control the carrier concentration, without compromising the quality of the system. Here, we demonstrate the working principle of a new generation of high quality gate defined g…
▽ More
Realizing graphene's promise as an atomically thin and tunable platform for fundamental studies and future applications in quantum transport requires the ability to electrostatically define the geometry of the structure and control the carrier concentration, without compromising the quality of the system. Here, we demonstrate the working principle of a new generation of high quality gate defined graphene samples, where the challenge of doing so in a gapless semiconductor is overcome by using the $ν=0$ insulating state, which emerges at modest applied magnetic fields. In order to verify that the quality of our devices is not compromised by the presence of multiple gates we compare the electronic transport response of different sample geometries, paying close attention to fragile quantum states, such as the fractional quantum Hall (FQH) states, that are highly susceptible to disorder. The ability to define local depletion regions without compromising device quality establishes a new approach towards structuring graphene-based quantum transport devices.
△ Less
Submitted 22 January, 2019; v1 submitted 4 January, 2019;
originally announced January 2019.
-
Competing Fractional Quantum Hall and Electron Solid Phases in Graphene
Authors:
Shaowen Chen,
Rebeca Ribeiro-Palau,
Kang Yang,
Kenji Watanabe,
Takashi Taniguchi,
James Hone,
Mark O. Goerbig,
Cory R. Dean
Abstract:
We report experimental observation of the reentrant integer quantum Hall effect in graphene, appearing in the N$=$2 Landau level. Similar to high-mobility GaAs/AlGaAs heterostructures, the effect is due to a competition between incompressible fractional quantum Hall states, and electron solid phases. The tunability of graphene allows us to measure the $B$-$T$ phase diagram of the electron-solid ph…
▽ More
We report experimental observation of the reentrant integer quantum Hall effect in graphene, appearing in the N$=$2 Landau level. Similar to high-mobility GaAs/AlGaAs heterostructures, the effect is due to a competition between incompressible fractional quantum Hall states, and electron solid phases. The tunability of graphene allows us to measure the $B$-$T$ phase diagram of the electron-solid phase. The hierarchy of reentrant states suggest spin and valley degrees of freedom play a role in determining the ground state energy. We find that the melting temperature scales with magnetic field, and construct a phase diagram of the electron liquid-solid transition.
△ Less
Submitted 7 August, 2018; v1 submitted 27 July, 2018;
originally announced July 2018.
-
Twistable electronics with dynamically rotatable heterostructures
Authors:
Rebeca Ribeiro-Palau,
Changjian Zhang,
Kenji Watanabe,
Takashi Taniguchi,
James Hone,
Cory R. Dean
Abstract:
The electronic properties of two-dimensional materials and their heterostructures can be dramatically altered by varying the relative angle between the layers. This makes it theoretically possible to realize a new class of twistable electronics in which device properties can be manipulated on-demand by simply rotating the structure. Here, we demonstrate a new device architecture in which a layered…
▽ More
The electronic properties of two-dimensional materials and their heterostructures can be dramatically altered by varying the relative angle between the layers. This makes it theoretically possible to realize a new class of twistable electronics in which device properties can be manipulated on-demand by simply rotating the structure. Here, we demonstrate a new device architecture in which a layered heterostructure can be dynamically twisted, in situ. We study graphene encapsulated by boron nitride where at small rotation angles the device characteristics are dominated by coupling to a large wavelength Moiré superlattice. The ability to investigate arbitrary rotation angle in a single device reveals new features in the optical, mechanical and electronic response in this system. Our results establish the capability to fabricate twistable electronic devices with dynamically tunable properties.
△ Less
Submitted 31 August, 2018; v1 submitted 5 April, 2018;
originally announced April 2018.
-
Graphene surpasses GaAs/AlGaAs for the application of the quantum Hall effect in metrology
Authors:
R. Ribeiro-Palau,
F. Lafont,
J. Brun-Picard,
D. Kazazis,
A. Michon,
F. Cheynis,
O. Couturaud,
C. Consejo,
B. Jouault,
W. Poirier,
F. Schopfer
Abstract:
The quantum Hall effect (QHE) theoretically provides a universal standard of electrical resistance in terms of the Planck constant $h$ and the electron charge $e$. In graphene, the spacing between the lowest discrete energy levels occupied by the charge carriers under magnetic field is exceptionally large. This is promising for a quantum Hall resistance standard more practical in graphene than in…
▽ More
The quantum Hall effect (QHE) theoretically provides a universal standard of electrical resistance in terms of the Planck constant $h$ and the electron charge $e$. In graphene, the spacing between the lowest discrete energy levels occupied by the charge carriers under magnetic field is exceptionally large. This is promising for a quantum Hall resistance standard more practical in graphene than in the GaAs/AlGaAs devices currently used in national metrology institutes. Here, we demonstrate that large QHE devices, made of high quality graphene grown by propane/hydrogen chemical vapour deposition on SiC substrates, can surpass state-of-the-art GaAs/AlGaAs devices by considerable margins in their required operational conditions. In particular, in the device presented here, the Hall resistance is accurately quantized within $1\times 10^{-9}$ over a 10-T wide range of magnetic field with a remarkable lower bound at 3.5 T, temperatures as high as 10 K, or measurement currents as high as 0.5 mA. These significantly enlarged and relaxed operational conditions, with a very convenient compromise of 5 T, 5.1 K and 50 $μ$A, set the superiority of graphene for this application and for the new generation of versatile and user-friendly quantum standards, compatible with a broader industrial use. We also measured an agreement of the quantized Hall resistance in graphene and GaAs/AlGaAs with an ultimate relative uncertainty of $8.2\times 10^{-11}$. This supports the universality of the QHE and its theoretical relation to $h$ and $e$, essential for the application in metrology, particularly in view of the forthcoming Système International d'unités (SI) based on fundamental constants of physics, including the redefinition of the kilogram in terms of $h$.
△ Less
Submitted 24 April, 2015;
originally announced April 2015.
-
Quantum Hall resistance standards from graphene grown by chemical vapor deposition on silicon carbide
Authors:
F. Lafont,
R. Ribeiro-Palau,
D. Kazazis,
A. Michon,
O. Couturaud,
C. Consejo,
T. Chassagne,
M. Zielinski,
M. Portail,
B. Jouault,
F. Schopfer,
W. Poirier
Abstract:
Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within $10^{-9}$ in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the required accuracy has been reported, only few times, in graphene grown on SiC by sublimation of Si, under higher magnetic fields. Here, we report on a device mad…
▽ More
Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within $10^{-9}$ in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the required accuracy has been reported, only few times, in graphene grown on SiC by sublimation of Si, under higher magnetic fields. Here, we report on a device made of graphene grown by chemical vapour deposition on SiC which demonstrates such accuracies of the Hall resistance from 10 T up to 19 T at 1.4 K. This is explained by a quantum Hall effect with low dissipation, resulting from strongly localized bulk states at the magnetic length scale, over a wide magnetic field range. Our results show that graphene-based QHRS can replace their GaAs counterparts by operating in as-convenient cryomagnetic conditions, but over an extended magnetic field range. They rely on a promising hybrid and scalable growth method and a fabrication process achieving low-electron density devices.
△ Less
Submitted 20 April, 2015; v1 submitted 14 July, 2014;
originally announced July 2014.
-
Anomalous dissipation mechanism and Hall quantization limit in polycrystalline graphene grown by chemical vapor deposition
Authors:
F. Lafont,
R. Ribeiro-Palau,
Z. Han,
A. Cresti,
A. Delvallée,
A. W. Cummings,
S. Roche,
V. Bouchiat,
S. Ducourtieux,
F. Schopfer,
W. Poirier
Abstract:
We report on the observation of strong backscattering of charge carriers in the quantum Hall regime of polycrystalline graphene grown by chemical vapor deposition, which alters the accuracy of the Hall resistance quantization. The temperature and magnetic field dependence of the longitudinal conductivity exhibits unexpectedly smooth power law behaviors, which are incompatible with a description in…
▽ More
We report on the observation of strong backscattering of charge carriers in the quantum Hall regime of polycrystalline graphene grown by chemical vapor deposition, which alters the accuracy of the Hall resistance quantization. The temperature and magnetic field dependence of the longitudinal conductivity exhibits unexpectedly smooth power law behaviors, which are incompatible with a description in terms of variable range hopping or thermal activation, but rather suggest the existence of extended or poorly localized states at energies between Landau levels. Such states could be caused by the high density of line defects (grain boundaries and wrinkles) that cross the Hall bars, as revealed by structural characterizations. Numerical calculations confirm that quasi-one-dimensional extended non-chiral states can form along such line defects and short-circuit the Hall bar chiral edge states.
△ Less
Submitted 6 October, 2014; v1 submitted 9 April, 2014;
originally announced April 2014.
