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Influence of Surface Roughness on Linear Behavior and Mechanical Properties of Three Cyanoacrylate-Based Adhesives Used to Bond Strain Gages
Authors:
L. G. Simao,
W. P. Jesus,
M. E. A. Ribeiro,
H. C. Rangel,
R. J. S. Rodriguez,
E. A. Carvalho
Abstract:
The challenge of accessing specialized adhesives designed for strain gage applications has been highlighted due to failures in logistic chains, requiring the exploration of local alternatives. A direct simulation of strain gage bonding behavior with two steel plates is infeasible due to the unique construction of strain gages. Therefore, an indirect simulation method, comparing local alternatives…
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The challenge of accessing specialized adhesives designed for strain gage applications has been highlighted due to failures in logistic chains, requiring the exploration of local alternatives. A direct simulation of strain gage bonding behavior with two steel plates is infeasible due to the unique construction of strain gages. Therefore, an indirect simulation method, comparing local alternatives to a widely accepted adhesive, Loctite 496, was employed in this study. Two potential replacements, Loctite 401 and Tekbond 793, were tested and matched against the benchmark adhesive, with a focus on the key mechanical properties: Proportional Shear Strain (PSS), Proportional Shear Stress (PSSt), and Apparent Shear Modulus (G*). Loctite 401 exhibited the highest G*, suggesting its potential use in strain gage installations if G* is considered most important. However, Tekbond 793 demonstrated superior PSS, Maximum Shear Stress (MSSt), and Rupture Shear Stress (RSSt) performance, displaying linear behavior even without an accelerator. Surface preparation considerations were also discussed, noting that hand abrading results in double the surface roughness than using an orbital sander. The study further identified two main regions concerning failure modes related to Ra, with values below 0.31 μm causing significant variations in observed mechanical properties, pointing towards factors beyond adhesive layer thickness affecting bond properties. Lastly, the general recommendation is the use of an accelerator for all tested adhesives, while the use of a surface conditioner and neutralizer was found to negatively impact adhesive performance.
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Submitted 2 January, 2024;
originally announced January 2024.
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Correlations in the elastic Landau level of spontaneously buckled graphene
Authors:
Antonio L. R. Manesco,
Jose L. Lado,
Eduardo V. S. Ribeiro,
Gabrielle Weber,
Durval Rodrigues Jr
Abstract:
Electronic correlations stemming from nearly flat bands in van der Waals materials have demonstrated to be a powerful playground to engineer artificial quantum matter, including superconductors, correlated insulators and topological matter. This phenomenology has been experimentally observed in a variety of twisted van der Waals materials, such as graphene and dichalcogenide multilayers. Here we s…
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Electronic correlations stemming from nearly flat bands in van der Waals materials have demonstrated to be a powerful playground to engineer artificial quantum matter, including superconductors, correlated insulators and topological matter. This phenomenology has been experimentally observed in a variety of twisted van der Waals materials, such as graphene and dichalcogenide multilayers. Here we show that spontaneously buckled graphene can yield a correlated state, emerging from an elastic pseudo Landau level. Our results build on top of recent experimental findings reporting that, when placed on top of hBN or NbSe$_2$ substrates, wrinkled graphene sheets relax forming a periodic, long-range buckling pattern. The low-energy physics can be accurately described by electrons in the presence of a pseudo-axial gauge field, leading to the formation of sublattice-polarized Landau levels. Moreover, we verify that the high density of states at the zeroth Landau level leads to the formation of a periodically modulated ferrimagnetic groundstate, which can be controlled by the application of external electric fields. Our results indicate that periodically strained graphene is a versatile platform to explore emergent electronic states arising from correlated elastic Landau levels.
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Submitted 28 July, 2020; v1 submitted 11 March, 2020;
originally announced March 2020.
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Active Matter in Lateral Parabolic Confinement: From Subdiffusion to Superdiffusion
Authors:
H. E. Ribeiro,
F. Q. Potiguar
Abstract:
In this work we studied the diffusive behavior of active brownian particles under lateral parabolic confinement. The results showed that we go from subdiffusion to ballistic motion as we vary the angular noise strength and confinement intensity. We argued that the subdiffusion regimes appear as consequence of the restricted space available for diffusion (achieved either through large confinement a…
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In this work we studied the diffusive behavior of active brownian particles under lateral parabolic confinement. The results showed that we go from subdiffusion to ballistic motion as we vary the angular noise strength and confinement intensity. We argued that the subdiffusion regimes appear as consequence of the restricted space available for diffusion (achieved either through large confinement and/or large noise); we saw that when there are large confinement and noise intensity, a similar configuration to single file diffusion appears; on the other hand, normal and superdiffusive regimes may occur due to low noise (longer persistent motion), either through exploring a wider region around the potential minimum in the transverse direction (low confinement), or by forming independent clusters (high confinement).
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Submitted 24 June, 2016;
originally announced June 2016.
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g-factor engineering and control in self-assembled quantum dots
Authors:
G. Medeiros-Ribeiro,
E. Ribeiro,
H. Westfahl Jr
Abstract:
The knowledge of electron and hole g-factors, their control and engineering are key for the usage of the spin degree of freedom for information processing in solid state systems. The electronic g-factor will be materials dependent, the effect being larger for materials with large spin-orbit coupling. Since electrons can be individually trapped into quantum dots in a controllable manner, they may…
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The knowledge of electron and hole g-factors, their control and engineering are key for the usage of the spin degree of freedom for information processing in solid state systems. The electronic g-factor will be materials dependent, the effect being larger for materials with large spin-orbit coupling. Since electrons can be individually trapped into quantum dots in a controllable manner, they may represent a good platform for the implementation of quantum information processing devices. Here we use self-assembled quantum dots of InAs embedded in GaAs for the g-factor control and engineering.
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Submitted 28 November, 2003;
originally announced November 2003.
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Aharonov-Bohm signature for neutral excitons in type-II quantum dot ensembles
Authors:
E. Ribeiro,
G. Medeiros-Ribeiro,
W. Carvalho Jr.,
A. O. Govorov
Abstract:
It is commonly believed that the Aharonov-Bohm (AB) effect is a typical feature of the motion of a charged particle interacting with the electromagnetic vector potential. Here we present a magnetophotoluminescence study of type-II InP/GaAs self-assembled quantum dots, unambiguously revealing the Aharonov-Bohm-type oscillations for neutral excitons when the hole ground state changes its angular m…
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It is commonly believed that the Aharonov-Bohm (AB) effect is a typical feature of the motion of a charged particle interacting with the electromagnetic vector potential. Here we present a magnetophotoluminescence study of type-II InP/GaAs self-assembled quantum dots, unambiguously revealing the Aharonov-Bohm-type oscillations for neutral excitons when the hole ground state changes its angular momentum from lh = 0 to lh = 1, 2, and 3. The hole ring parameters derived from a simple model are in excellent agreement with the structural parameters for this system.
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Submitted 17 December, 2003; v1 submitted 3 April, 2003;
originally announced April 2003.
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Transport signatures of correlated disorder in a two-dimensional electron gas
Authors:
T. Heinzel,
R. D. Jaeggi,
E. Ribeiro,
M. v. Waldkirch,
K. Ensslin,
S. E. Ulloa,
G. Medeiros-Ribeiro,
P. M. Petroff
Abstract:
We report electronic transport measurements on two-dimensional electron gases in a Ga[Al]As heterostructure with an embedded layer of InAs self-assembled quantum dots. At high InAs dot densities, pronounced Altshuler-Aronov-Spivak magnetoresistance oscillations are observed, which indicate short-range ordering of the potential landscape formed by the charged dots and the strain fields. The prese…
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We report electronic transport measurements on two-dimensional electron gases in a Ga[Al]As heterostructure with an embedded layer of InAs self-assembled quantum dots. At high InAs dot densities, pronounced Altshuler-Aronov-Spivak magnetoresistance oscillations are observed, which indicate short-range ordering of the potential landscape formed by the charged dots and the strain fields. The presence of these oscillations coincides with the observation of a metal-insulator transition, and a maximum in the electron mobility as a function of the electron density. Within a model based on correlated disorder, we establish a relation between these effects.
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Submitted 18 October, 2001;
originally announced October 2001.
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Metal-Insulator Transition in a Disordered Two-Dimensional Electron Gas in GaAs-AlGaAs at zero Magnetic Field
Authors:
E. Ribeiro,
R. Jaeggi,
T. Heinzel,
K. Ensslin,
G. Medeiros-Ribeiro,
P. M. Petroff
Abstract:
A metal-insulator transition in two-dimensional electron gases at B=0 is found in Ga(Al)As heterostructures, where a high density of self-assembled InAs quantum dots is incorporated just 3 nm below the heterointerface. The transition occurs at resistances around h/e^2 and critical carrier densities of 1.2 10^11cm^-2. Effects of electron-electron interactions are expected to be rather weak in our…
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A metal-insulator transition in two-dimensional electron gases at B=0 is found in Ga(Al)As heterostructures, where a high density of self-assembled InAs quantum dots is incorporated just 3 nm below the heterointerface. The transition occurs at resistances around h/e^2 and critical carrier densities of 1.2 10^11cm^-2. Effects of electron-electron interactions are expected to be rather weak in our samples, while disorder plays a crucial role.
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Submitted 27 August, 1998; v1 submitted 25 August, 1998;
originally announced August 1998.
