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Showing 1–3 of 3 results for author: Rezende-Gonçalves, P

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  1. Metallic layered materials with magnetic frustration: An ARPES view of the SmAuAl$_4$Ge$_2$ and TbAuAl$_4$Ge$_2$

    Authors: P. Rezende-Gonçalves, A. Antezak, T. Kato, K. Feng, F. Fortuna, P. Le Fèvre, M. Rosmus, N. Olszowska, T. Sobol, D. J. Singh, R. E. Baumbach, A. F. Santander-Syro, E. Frantzeskakis

    Abstract: Compounds of the new materials class LnTAl$_4$X$_2$ (Ln = lanthanide, X = tetrel, T = transition metal) host exotic magnetic phenomena due to geometric frustration induced by their triangular lattice. Complex spin arrangements, magnetic fluctuations and double magnetic transitions have been well observed by means of magneto-transport. Nevertheless, the experimental electronic structure of this fam… ▽ More

    Submitted 26 May, 2025; originally announced May 2025.

    Comments: 11 pages, 5 figures

    Journal ref: Phys. Rev. B 111, 205114 (2025)

  2. arXiv:2305.00053  [pdf, other

    cond-mat.str-el cond-mat.mtrl-sci

    Experimental observation of metallic states with different dimensionality in a quasi-1D charge density wave compound

    Authors: P. Rezende-Gonçalves, M. Thees, J. Rojas Castillo, D. Silvera-Vega, R. L. Bouwmeester, E. David, A. Antezak, A. J. Thakur, F. Fortuna, P. Le Fèvre, M. Rosmus, N. Olszowska, R. Magalhães-Paniago, A. C. Garcia-Castro, P. Giraldo-Gallo, E. Frantzeskakis, A. F. Santander-Syro

    Abstract: TaTe$_4$ is a quasi-1D tetrachalcogenide that exhibits a CDW instability caused by a periodic lattice distortion. Recently, pressure-induced superconductivity has been achieved in this compound, revealing a competition between these different ground states and making TaTe$_4$ very interesting for fundamental studies. Although TaTe$_4$ exhibits CDW ordering below 475 K, transport experiments have r… ▽ More

    Submitted 28 April, 2023; originally announced May 2023.

    Comments: 8 pages, 4 figures

  3. arXiv:2207.04287  [pdf, other

    cond-mat.str-el cond-mat.mtrl-sci

    Imaging the itinerant-to-localized transmutation of electrons across the metal-to-insulator transition in V$_2$O$_3$

    Authors: Maximilian Thees, Min-Han Lee, Rosa Luca Bouwmeester, Pedro H. Rezende-Gonçalves, Emma David, Alexandre Zimmers, Emmanouil Frantzeskakis, Nicolas M. Vargas, Yoav Kalcheim, Patrick Le Fèvre, Koji Horiba, Hiroshi Kumigashira, Silke Biermann, Juan Trastoy, Marcelo J. Rozenberg, Ivan K. Schuller, Andrés F. Santander-Syro

    Abstract: In solids, strong repulsion between electrons can inhibit their movement and result in a "Mott" metal-to-insulator transition (MIT), a fundamental phenomenon whose understanding has remained a challenge for over 50 years. A key issue is how the wave-like itinerant electrons change into a localized-like state due to increased interactions. However, observing the MIT in terms of the energy- and mome… ▽ More

    Submitted 9 July, 2022; originally announced July 2022.

    Comments: Main Text (4 figures) and Supplementary Information (12 figures)

    Journal ref: Science Advances 7(45), eabj1164 (2021)