Showing 1–9 of 9 results for author: Restrepo, D

Computational characterization of the wave propagation behaviour of multi-stable periodic cellular materials

Authors: Camilo Valencia, David Restrepo, Nilesh D. mankame, Pablo D. Zavattieri, Juan Gomez

Abstract: In this work, we present a computational analysis of the planar wave propagation behavior of a one-dimensional periodic multi-stable cellular material. Wave propagation in these materials is interesting because they combine the ability of periodic cellular materials to exhibit stop and pass bands with the ability to dissipate energy through cell-level elastic instabilities. Here, we use Bloch peri… ▽ More In this work, we present a computational analysis of the planar wave propagation behavior of a one-dimensional periodic multi-stable cellular material. Wave propagation in these materials is interesting because they combine the ability of periodic cellular materials to exhibit stop and pass bands with the ability to dissipate energy through cell-level elastic instabilities. Here, we use Bloch periodic boundary conditions to compute the dispersion curves and introduce a new approach for computing wide band directionality plots. Also, we deconstruct the wave propagation behavior of this material to identify the contributions from its various structural elements by progressively building the unit cell, structural element by element, from a simple, homogeneous, isotropic primitive. Direct integration time domain analyses of a representative volume element at a few salient frequencies in the stop and pass bands are used to confirm the existence of partial band gaps in the response of the cellular material. Insights gained from the above analyses are then used to explore modifications of the unit cell that allow the user to tune the band gaps in the response of the material. We show that this material behaves like a locally resonant material that exhibits low frequency band gaps for small amplitude planar waves. Moreover, modulating the geometry or material of the central bar in the unit cell provides a path to adjust the position of the band gaps in the material response. △ Less

Submitted 30 September, 2019; originally announced November 2019.

Comments: 24 pages, 7 figures

Improved model for the thermal conductivity of binary metallic systems

Authors: Changdong Wei, Nikolas Antolin, Oscar D. Restrepo, Wolfgang Windl, Ji-Cheng Zhao

Abstract: We extended and corrected Mott's two-band model for the composition-dependence of thermal and electrical conductivity in binary metal alloys based on high-throughput time-domain thermoreflectance (TDTR) measurements on diffusion multiples and scatterer-density calculations from first principles. Examining PdAg, PtRh, AuAg, AuCu, PdCu, PdPt, and NiRh binary alloys, we found that the nature of the t… ▽ More We extended and corrected Mott's two-band model for the composition-dependence of thermal and electrical conductivity in binary metal alloys based on high-throughput time-domain thermoreflectance (TDTR) measurements on diffusion multiples and scatterer-density calculations from first principles. Examining PdAg, PtRh, AuAg, AuCu, PdCu, PdPt, and NiRh binary alloys, we found that the nature of the two dominant scatterer-bands considered in the Mott model changes with the alloys, and should be interpreted as a combination of the dominant element-specific s- and/or d-orbitals. Using calculated orbital and element-resolved density-of-states values calculated with density functional theory as input, we determined the correct orbital mix that dominates electron scattering for all examined alloys and find excellent agreement between fitted models and experiments. The proposed description of the composition dependence of the resistivity can be readily implemented into the CALPHAD framework. △ Less

Submitted 30 September, 2016; v1 submitted 29 June, 2016; originally announced June 2016.

Comments: Version 2

Effects of the local structure dependence of evaporation fields on field evaporation behavior

Authors: Lan Yao, Travis Withrow, Oscar D. Restrepo, Wolfgang Windl, Emmanuelle A. Marquis

Abstract: Accurate three dimensional reconstructions of atomic positions, and full quantification of the information contained in atom probe tomography data relies on understanding the physical processes taking place during field evaporation of atoms from needle-shaped specimens. However, the modeling framework for atom probe tomography has remained qualitative at best. Building on the continuum field model… ▽ More Accurate three dimensional reconstructions of atomic positions, and full quantification of the information contained in atom probe tomography data relies on understanding the physical processes taking place during field evaporation of atoms from needle-shaped specimens. However, the modeling framework for atom probe tomography has remained qualitative at best. Building on the continuum field models previously developed, we introduce a more physical approach with the selection of evaporation events based on density functional theory calculations. This new model reproduces key features observed experimentally in terms of sequence of evaporation, desorption maps, and depth resolution, and provides insights into the physical limit for spatial resolution. △ Less

Submitted 19 August, 2015; originally announced August 2015.

First-Principles Simulation of Electron Mean-Free-Path Spectra and Thermoelectric Properties in Silicon

Authors: Bo Qiu, Zhiting Tian, Ajit Vallabhaneni, Bolin Liao, Jonathan M. Mendoza, Oscar D. Restrepo, Xiulin Ruan, Gang Chen

Abstract: The mean-free-paths (MFPs) of energy carriers are of critical importance to the nano-engineering of better thermoelectric materials. Despite significant progress in the first-principles-based understanding of the spectral distribution of phonon MFPs in recent years, the spectral distribution of electron MFPs remains unclear. In this work, we compute the energy dependent electron scatterings and MF… ▽ More The mean-free-paths (MFPs) of energy carriers are of critical importance to the nano-engineering of better thermoelectric materials. Despite significant progress in the first-principles-based understanding of the spectral distribution of phonon MFPs in recent years, the spectral distribution of electron MFPs remains unclear. In this work, we compute the energy dependent electron scatterings and MFPs in silicon from first-principles. The electrical conductivity accumulation with respect to electron MFPs is compared to that of the phonon thermal conductivity accumulation to illustrate the quantitative impact of nanostructuring on electron and phonon transport. By combining all electron and phonon transport properties from first-principles, we predict the thermoelectric properties of the bulk and nanostructured silicon, and find that silicon with 20 nm nanograins can result in more than five times enhancement in their thermoelectric figure of merit as the grain boundaries scatter phonons more significantly than that of electrons due to their disparate MFP distributions. △ Less

Submitted 4 February, 2015; v1 submitted 16 September, 2014; originally announced September 2014.

Fast Free Energy Calculations for Unstable High-Temperature Phases

Authors: Nikolas Antolin, Oscar D. Restrepo, Wolfgang Windl

Abstract: We present a fast and accurate method to calculate vibrational properties for mechanically unstable high temperature phases that suffer from imaginary frequencies at zero temperature. The method is based on standard finite-difference calculations with optimized large displacements and is significantly more efficient than other methods. We demonstrate its application for calculation of phonon dispe… ▽ More We present a fast and accurate method to calculate vibrational properties for mechanically unstable high temperature phases that suffer from imaginary frequencies at zero temperature. The method is based on standard finite-difference calculations with optimized large displacements and is significantly more efficient than other methods. We demonstrate its application for calculation of phonon dispersion relations, free energies, phase transition temperatures, and vacancy formation energies for body-centered cubic high-temperature phases of Ti, Zr, and Hf. △ Less

Submitted 9 July, 2012; v1 submitted 6 January, 2012; originally announced January 2012.

Defect states and disorder in charge transport in semiconductor nanowires

Authors: Dongkyun Ko, X. W. Zhao, Kongara M. Reddy, O. D. Restrepo, R. Mishra, I. S. Beloborodov, Nandini Trivedi, Nitin P. Padture, W. Windl, F. Y. Yang, E. Johnston-Halperin

Abstract: We present a comprehensive investigation into disorder-mediated charge transport in InP nanowires in the statistical doping regime. At zero gate voltage transport is well described by the space charge limited current model and Efros-Shklovskii variable range hopping, but positive gate voltage (electron accumulation) reveals a previously unexplored regime of nanowire charge transport that is not we… ▽ More We present a comprehensive investigation into disorder-mediated charge transport in InP nanowires in the statistical doping regime. At zero gate voltage transport is well described by the space charge limited current model and Efros-Shklovskii variable range hopping, but positive gate voltage (electron accumulation) reveals a previously unexplored regime of nanowire charge transport that is not well described by existing theory. The ability to continuously tune between these regimes provides guidance for the extension of existing models and directly informs the design of next-generation nanoscale electronic devices. △ Less

Submitted 22 June, 2011; originally announced June 2011.

Comments: Main Text is 16 pages with 4 figures, Supplemental Materials is additional 6 pages with 1 figure

First principles calculation of polarization induced interfacial charges in GaN/AlN heterostructures

Authors: Rohan Mishra, Oscar D. Restrepo, Siddharth Rajan, Wolfgang Windl

Abstract: We propose a new method to calculate polarization induced interfacial charges in semiconductor heterostructures using classical electrostatics applied to real-space band diagrams from first principles calculations and apply it to GaN/AlN heterostructures with ultrathin AlN layers (4-6 monolayers). We show that the calculated electric fields and interfacial charges are independent of the exchange-c… ▽ More We propose a new method to calculate polarization induced interfacial charges in semiconductor heterostructures using classical electrostatics applied to real-space band diagrams from first principles calculations and apply it to GaN/AlN heterostructures with ultrathin AlN layers (4-6 monolayers). We show that the calculated electric fields and interfacial charges are independent of the exchange-correlation functionals used (local-density approximation and hybrid functionals). We also find the calculated interfacial charge of (6.8 +/- 0.4) x 10^13 cm-2 to be in excellent agreement with experiments and the value of 6.58 x 10^13 cm-2 calculated from bulk polarization constants, validating the use of bulk constants even for very thin films. △ Less

Submitted 17 May, 2011; v1 submitted 20 April, 2011; originally announced April 2011.

Comments: 3 pages, 2 figures; submitted to Applied Physics Letters

Journal ref: Apl. Phys. Lett. 98, 232114 (2011)

Full first-principles theory of spin relaxation in group-IV materials

Authors: Oscar D. Restrepo, Wolfgang Windl

Abstract: We present a generally applicable parameter-free first-principles method to determine electronic spin relaxation times and apply it to the technologically important group-IV materials silicon, diamond and graphite. We concentrate on the Elliott-Yafet mechanism, where spin relaxation is induced by momentum scattering off phonons and impurities. In silicon, we find a $\sim T^{-3}$ temperature depend… ▽ More We present a generally applicable parameter-free first-principles method to determine electronic spin relaxation times and apply it to the technologically important group-IV materials silicon, diamond and graphite. We concentrate on the Elliott-Yafet mechanism, where spin relaxation is induced by momentum scattering off phonons and impurities. In silicon, we find a $\sim T^{-3}$ temperature dependence of the phonon-limited spin relaxation time T$_1$ and a value of 4.3 ns at room temperature, in agreement with experiments. For the phonon-dominated regime in diamond and graphite, we predict a stronger $\sim T^{-5}$ and $\sim T^{-4.5}$ dependence that limits $T_1$ (300 K) to 180 and 5.8 ns, respectively. A key aspect of this study is that the parameter-free nature of our approach provides a method to study the effect of {\em any} type of impurity or defect on spin-transport. Furthermore we find that the spin-mix amplitude in silicon does not follow the $E_g^{-2}$ band gap dependence usually assigned to III-V semiconductors but follows a much weaker and opposite $E_g^{0.67}$ dependence. This dependence should be taken into account when constructing silicon spin transport models. △ Less

Submitted 18 September, 2012; v1 submitted 26 October, 2010; originally announced October 2010.

Comments: 5 pages, 3 figures. Phys. Rev. Lett., in press

Low-Energy Charge-Density Excitations in MgB$_{2}$: Striking Interplay between Single-Particle and Collective Behavior for Large Momenta

Authors: Y. Q. Cai, P. C. Chow, O. D. Restrepo, Y. Takano, K. Togano, H. Kito, H. Ishii, C. C. Chen, K. S. Liang, C. T. Chen, S. Tsuda, S. Shin, C. C. Kao, W. Ku, A. G. Eguiluz

Abstract: A sharp feature in the charge-density excitation spectra of single-crystal MgB$_{2}$, displaying a remarkable cosine-like, periodic energy dispersion with momentum transfer ($q$) along the $c^{*}$-axis, has been observed for the first time by high-resolution non-resonant inelastic x-ray scattering (NIXS). Time-dependent density-functional theory calculations show that the physics underlying the… ▽ More A sharp feature in the charge-density excitation spectra of single-crystal MgB$_{2}$, displaying a remarkable cosine-like, periodic energy dispersion with momentum transfer ($q$) along the $c^{*}$-axis, has been observed for the first time by high-resolution non-resonant inelastic x-ray scattering (NIXS). Time-dependent density-functional theory calculations show that the physics underlying the NIXS data is strong coupling between single-particle and collective degrees of freedom, mediated by large crystal local-field effects. As a result, the small-$q$ collective mode residing in the single-particle excitation gap of the B $π$ bands reappears periodically in higher Brillouin zones. The NIXS data thus embody a novel signature of the layered electronic structure of MgB$_{2}$. △ Less

Submitted 13 July, 2006; v1 submitted 12 May, 2006; originally announced May 2006.

Comments: 5 pages, 4 figures, submitted to PRL

Journal ref: Phys. Rev. Lett. 97, 176402 (2006)