Isotropic atomic layer etching of MgO-doped lithium niobate using sequential exposures of H$_2$ and SF$_6$ plasmas
Authors:
Ivy I. Chen,
Jennifer Solgaard,
Ryoto Sekine,
Azmain A. Hossain,
Anthony Ardizzi,
David S. Catherall,
Alireza Marandi,
James R. Renzas,
Frank Greer,
Austin J. Minnich
Abstract:
Lithium niobate (LiNbO$_3$, LN) is a ferroelectric crystal of interest for integrated photonics owing to its large second-order optical nonlinearity and the ability to impart periodic poling via an external electric field. However, on-chip device performance based on thin-film lithium niobate (TFLN) is presently limited by propagation losses arising from surface roughness and corrugations. Atomic…
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Lithium niobate (LiNbO$_3$, LN) is a ferroelectric crystal of interest for integrated photonics owing to its large second-order optical nonlinearity and the ability to impart periodic poling via an external electric field. However, on-chip device performance based on thin-film lithium niobate (TFLN) is presently limited by propagation losses arising from surface roughness and corrugations. Atomic layer etching (ALE) could potentially smooth these features and thereby increase photonic performance, but no ALE process has been reported for LN. Here, we report an isotropic ALE process for $x$-cut MgO-doped LN using sequential exposures of H$_2$ and SF$_6$/Ar plasmas. We observe an etch rate of $1.59 \pm 0.02$ nm/cycle with a synergy of $96.9$%. We also demonstrate ALE can be achieved with SF$_6$/O$_2$ or Cl$_2$/BCl$_3$ plasma exposures in place of the SF$_6$/Ar plasma step with synergies of $99.5$% and $91.5$% respectively. The process is found to decrease the sidewall surface roughness of TFLN waveguides etched by physical Ar$^+$ milling by 30% without additional wet processing. Our ALE process could be used to smooth sidewall surfaces of TFLN waveguides as a post-processing treatment, thereby increasing the performance of TFLN nanophotonic devices and enabling new integrated photonic device capabilities.
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Submitted 5 October, 2024; v1 submitted 16 October, 2023;
originally announced October 2023.
Isotropic plasma-thermal atomic layer etching of superconducting TiN films using sequential exposures of molecular oxygen and SF$_6/$H$_2$ plasma
Authors:
Azmain A. Hossain,
Haozhe Wang,
David S. Catherall,
Martin Leung,
Harm C. M. Knoops,
James R. Renzas,
Austin J. Minnich
Abstract:
Microwave loss in superconducting titanium nitride (TiN) films is attributed to two-level systems in various interfaces arising in part from oxidation and microfabrication-induced damage. Atomic layer etching (ALE) is an emerging subtractive fabrication method which is capable of etching with Angstrom-scale etch depth control and potentially less damage. However, while ALE processes for TiN have b…
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Microwave loss in superconducting titanium nitride (TiN) films is attributed to two-level systems in various interfaces arising in part from oxidation and microfabrication-induced damage. Atomic layer etching (ALE) is an emerging subtractive fabrication method which is capable of etching with Angstrom-scale etch depth control and potentially less damage. However, while ALE processes for TiN have been reported, they either employ HF vapor, incurring practical complications; or the etch rate lacks the desired control. Further, the superconducting characteristics of the etched films have not been characterized. Here, we report an isotropic plasma-thermal TiN ALE process consisting of sequential exposures to molecular oxygen and an SF$_6$/H$_2$ plasma. For certain ratios of SF$_6$:H$_2$ flow rates, we observe selective etching of TiO$_2$ over TiN, enabling self-limiting etching within a cycle. Etch rates were measured to vary from 1.1 Å/cycle at 150 $^\circ$C to 3.2 Å/cycle at 350 $^\circ$C using ex-situ ellipsometry. We demonstrate that the superconducting critical temperature of the etched film does not decrease beyond that expected from the decrease in film thickness, highlighting the low-damage nature of the process. These findings have relevance for applications of TiN in microwave kinetic inductance detectors and superconducting qubits.
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Submitted 6 July, 2023;
originally announced July 2023.
