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Coupling between magnetism and band structure in a 2D semiconductor
Authors:
Lihuan Sun,
Marco Gibertini,
Alessandro Scarfato,
Menghan Liao,
Fan Wu,
Alberto F. Morpurgo,
Christoph Renner
Abstract:
Van der Waals semiconducting magnets exhibit a cornucopia of physical phenomena originating from the interplay of their semiconducting and magnetic properties. However, a comprehensive understanding of how semiconducting processes and magnetism are coupled is lacking. We address this question by performing scanning tunneling spectroscopy (STS) measurements on the magnetic semiconductor CrPS$_4$, a…
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Van der Waals semiconducting magnets exhibit a cornucopia of physical phenomena originating from the interplay of their semiconducting and magnetic properties. However, a comprehensive understanding of how semiconducting processes and magnetism are coupled is lacking. We address this question by performing scanning tunneling spectroscopy (STS) measurements on the magnetic semiconductor CrPS$_4$, and by comparing the results to photoluminescence experiments and density functional theory (DFT) calculations. Below the magnetic transition, STS exhibit multiple features absent in the paramagnetic state, caused by the proliferation of electronic bands due to spin splitting with a large ($\simeq 0.5$ eV) exchange energy. The energetic differences between the band edges determined by STS match all observed photoluminescence transitions, which also proliferate in the magnetic state. DFT calculations quantitatively predict the relative positions of all detected bands, explain which pairs of bands lead to radiative transitions, and also reproduce the measured spatial dependence of electronic wavefunctions. Our results reveal how all basic optoelectronic processes observed in CrPS$_4$ can be understood in terms of the evolution of the electronic band structure when entering the magnetic state, and allow us to conclude that individual bands are fully spin-polarized over a broad energy interval.
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Submitted 15 May, 2025;
originally announced May 2025.
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Doping Tunable CDW Phase Transition in Bulk 1T-ZrSe$_2$
Authors:
Andreas Ørsted,
Alessandro Scarfato,
Céline Barreteau,
Enrico Giannini,
Christoph Renner
Abstract:
Tuneable electronic properties in transition metal dichalcogenides (TMDs) are essential to further their use in device applications. Here, we present a comprehensive scanning tunnelling microscopy and spectroscopy study of a doping-induced charge density wave (CDW) in semiconducting bulk 1T-ZrSe$_2$. We find that atomic impurities which locally shift the Fermi level ($E_F$) into the conduction ban…
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Tuneable electronic properties in transition metal dichalcogenides (TMDs) are essential to further their use in device applications. Here, we present a comprehensive scanning tunnelling microscopy and spectroscopy study of a doping-induced charge density wave (CDW) in semiconducting bulk 1T-ZrSe$_2$. We find that atomic impurities which locally shift the Fermi level ($E_F$) into the conduction band trigger a CDW reconstruction concomitantly to the opening of a gap at $E_F$. Our findings shed new light on earlier photoemission spectroscopy and theoretical studies of bulk 1T-ZrSe$_2$, and provide a local understanding of the electron-doping mediated CDW transition observed in semiconducting TMDs.
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Submitted 11 September, 2024;
originally announced September 2024.
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Feedback loop dependent charge density wave imaging by scanning tunneling spectroscopy
Authors:
Alessandro Scarfato,
Árpád Pásztor,
Lihuan Sun,
Ivan Maggio-Aprile,
Vincent Pasquier,
Tejas Parasram Singar,
Andreas Ørsted,
Ishita Pushkarna,
Marcello Spera,
Enrico Giannini,
Christoph Renner
Abstract:
Scanning Tunneling Spectroscopy (STS) is a unique technique to probe the local density of states (LDOS) at the atomic scale by measuring the tunneling conductance between a sharp tip and a sample surface. However, the technique suffers of well-known limitations, the so-called set-point effect, which can potentially introduce artifacts in the measurements. We compare several STS imaging schemes app…
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Scanning Tunneling Spectroscopy (STS) is a unique technique to probe the local density of states (LDOS) at the atomic scale by measuring the tunneling conductance between a sharp tip and a sample surface. However, the technique suffers of well-known limitations, the so-called set-point effect, which can potentially introduce artifacts in the measurements. We compare several STS imaging schemes applied to the LDOS modulations of the charge density wave state on atomically flat surfaces, and demonstrate that only constant-height STS is capable of mapping the intrinsic LDOS. In the constant-current STS, commonly used and easier-to-implement, the tip-sample distance variations imposed by the feedback loop result in set-point-dependent STS images and possibly mislead the identification of the CDW gap edges.
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Submitted 24 July, 2024; v1 submitted 5 June, 2024;
originally announced June 2024.
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Vortex-core spectroscopy of $d$-wave cuprate high-temperature superconductors
Authors:
Ivan Maggio-Aprile,
Tejas Parasram Singar,
Christophe Berthod,
Tim Gazdić,
Jens Bruér,
Christoph Renner
Abstract:
The mechanism of high-temperature superconductivity remains one of the great challenges of contemporary physics. Here, we review efforts to image the vortex lattice in copper oxide-based high-temperature superconductors and to measure the characteristic electronic structure of the vortex core of a $d$-wave superconductor using scanning tunneling spectroscopy.
The mechanism of high-temperature superconductivity remains one of the great challenges of contemporary physics. Here, we review efforts to image the vortex lattice in copper oxide-based high-temperature superconductors and to measure the characteristic electronic structure of the vortex core of a $d$-wave superconductor using scanning tunneling spectroscopy.
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Submitted 19 September, 2023;
originally announced September 2023.
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Delusive chirality and periodic strain pattern in moiré systems
Authors:
Árpád Pásztor,
Ishita Pushkarna,
Christoph Renner
Abstract:
Geometric phase analysis (GPA) is a widely used technique for extracting displacement and strain fields from scanning probe images. Here, we demonstrate that GPA should be implemented with caution when several fundamental lattices contribute to the image, in particular in twisted heterostructures featuring moiré patterns. We find that in this case, GPA is likely to suggest the presence of chiral d…
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Geometric phase analysis (GPA) is a widely used technique for extracting displacement and strain fields from scanning probe images. Here, we demonstrate that GPA should be implemented with caution when several fundamental lattices contribute to the image, in particular in twisted heterostructures featuring moiré patterns. We find that in this case, GPA is likely to suggest the presence of chiral displacement and periodic strain fields, even if the structure is completely relaxed and without distortions. These delusive fields are subject to change with varying twist angles, which could mislead the interpretation of twist angle dependent properties.
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Submitted 6 September, 2023; v1 submitted 4 September, 2023;
originally announced September 2023.
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Twist angle dependent electronic properties of exfoliated single layer MoS$_2$ on Au(111)
Authors:
Ishita Pushkarna,
Árpád Pásztor,
Christoph Renner
Abstract:
Synthetic materials and heterostructures obtained by the controlled stacking of exfoliated monolayers are emerging as attractive functional materials owing to their highly tunable properties. We present a detailed scanning tunneling microscopy and spectroscopy study of single layer MoS$_2$-on-gold heterostructures as a function of twist angle. We find that their electronic properties are determine…
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Synthetic materials and heterostructures obtained by the controlled stacking of exfoliated monolayers are emerging as attractive functional materials owing to their highly tunable properties. We present a detailed scanning tunneling microscopy and spectroscopy study of single layer MoS$_2$-on-gold heterostructures as a function of twist angle. We find that their electronic properties are determined by the hybridization of the constituent layers and are modulated at the moiré period. The hybridization depends on the layer alignment and the modulation amplitude vanishes with increasing twist angle. We explain our observations in terms of a hybridization between the nearest sulfur and gold atoms, which becomes spatially more homogeneous and weaker as the moiré periodicity decreases with increasing twist angle, unveiling the possibility of tunable hybridization of electronic states via twist angle engineering.
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Submitted 21 July, 2023;
originally announced July 2023.
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Determining spin-orbit coupling in graphene by quasiparticle interference imaging
Authors:
Lihuan Sun,
Louk Rademaker,
Diego Mauro,
Alessandro Scarfato,
Árpád Pásztor,
Ignacio Gutiérrez-Lezama,
Zhe Wang,
Jose Martinez-Castro,
Alberto F. Morpurgo,
Christoph Renner
Abstract:
Inducing and controlling spin-orbit coupling (SOC) in graphene is key to create topological states of matter, and for the realization of spintronic devices. Placing graphene onto a transition metal dichalcogenide is currently the most successful strategy to achieve this goal, but there is no consensus as to the nature and the magnitude of the induced SOC. Here, we show that the presence of backsca…
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Inducing and controlling spin-orbit coupling (SOC) in graphene is key to create topological states of matter, and for the realization of spintronic devices. Placing graphene onto a transition metal dichalcogenide is currently the most successful strategy to achieve this goal, but there is no consensus as to the nature and the magnitude of the induced SOC. Here, we show that the presence of backscattering in graphene-on-WSe$_2$ heterostructures can be used to probe SOC and to determine its strength quantitatively, by imaging quasiparticle interference with a scanning tunneling microscope. A detailed theoretical analysis of the Fourier transform of quasiparticle interference images reveals that the induced SOC consists of a valley-Zeeman ($λ_{\text{vZ}}\approx 2$ meV) and a Rashba ($λ_\text{R}\approx 15$ meV) term, one order of magnitude larger than what theory predicts, but in excellent agreement with earlier transport experiments. The validity of our analysis is confirmed by measurements on a 30 degree twist angle heterostructure that exhibits no backscattering, as expected from symmetry considerations. Our results demonstrate a viable strategy to determine SOC quantitatively by imaging quasiparticle interference.
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Submitted 9 December, 2022;
originally announced December 2022.
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Tunable biaxial strain device for low dimensional materials
Authors:
Vincent Pasquier,
Alessandro Scarfato,
Jose Martinez-Castro,
Antoine Guipet,
Christoph Renner
Abstract:
Strain is attracting much interest as a mean to tune the properties of thin exfoliated two-dimensional materials and their heterostructures. Numerous devices to apply tunable uniaxial strain are proposed in the literature, but only few for biaxial strain where there is often a trade-off between maximum strain and uniformity, reversibility and device size. We present a compact device that allows th…
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Strain is attracting much interest as a mean to tune the properties of thin exfoliated two-dimensional materials and their heterostructures. Numerous devices to apply tunable uniaxial strain are proposed in the literature, but only few for biaxial strain where there is often a trade-off between maximum strain and uniformity, reversibility and device size. We present a compact device that allows the controlled application of uniform in-plane biaxial strain, with maximum deformation and uniformity comparable to those found in much larger devices. Its performance and strain uniformity over the sample area are modeled using finite element analysis and demonstrated by measuring the response of exfoliated 2H-MoS$_2$ to strain by Raman spectroscopy.
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Submitted 30 May, 2022; v1 submitted 27 May, 2022;
originally announced May 2022.
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Skyrmion-(Anti)Vortex Coupling in a Chiral Magnet-Superconductor Heterostructure
Authors:
A. P. Petrović,
M. Raju,
X. Y. Tee,
A. Louat,
I. Maggio-Aprile,
R. M. Menezes,
M. J. Wyszyński,
N. K. Duong,
M. Reznikov,
Ch. Renner,
M. V. Milošević,
C. Panagopoulos
Abstract:
We report experimental coupling of chiral magnetism and superconductivity in [IrFeCoPt]/Nb heterostructures. The stray field of skyrmions with radius ~50nm is sufficient to nucleate antivortices in a 25nm Nb film, with unique signatures in the magnetization, critical current and flux dynamics, corroborated via simulations. We also detect a thermally-tunable Rashba-Edelstein exchange coupling in th…
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We report experimental coupling of chiral magnetism and superconductivity in [IrFeCoPt]/Nb heterostructures. The stray field of skyrmions with radius ~50nm is sufficient to nucleate antivortices in a 25nm Nb film, with unique signatures in the magnetization, critical current and flux dynamics, corroborated via simulations. We also detect a thermally-tunable Rashba-Edelstein exchange coupling in the isolated skyrmion phase. This realization of a strongly interacting skyrmion-(anti)vortex system opens a path towards controllable topological hybrid materials, unattainable to date.
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Submitted 17 March, 2021;
originally announced March 2021.
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Wang-MacDonald d-wave vortex cores observed in heavily overdoped Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$
Authors:
Tim Gazdić,
Ivan Maggio-Aprile,
Genda Gu,
Christoph Renner
Abstract:
Low magnetic field scanning tunneling spectroscopy of individual Abrikosov vortices in heavily overdoped Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ unveils a clear d-wave electronic structure of the vortex core, with a zero-bias conductance peak at the vortex center that splits with increasing distance from the core. We show that previously reported unconventional electronic structures, including the low energ…
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Low magnetic field scanning tunneling spectroscopy of individual Abrikosov vortices in heavily overdoped Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ unveils a clear d-wave electronic structure of the vortex core, with a zero-bias conductance peak at the vortex center that splits with increasing distance from the core. We show that previously reported unconventional electronic structures, including the low energy checkerboard charge order in the vortex halo and the absence of a zero-bias conductance peak at the vortex center, are direct consequences of short inter-vortex distance and consequent vortex-vortex interactions prevailing in earlier experiments.
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Submitted 10 March, 2021;
originally announced March 2021.
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Multiband charge density wave exposed in a transition metal dichalcogenide
Authors:
Árpád Pásztor,
Alessandro Scarfato,
Marcello Spera,
Felix Flicker,
Céline Barreteau,
Enrico Giannini,
Jasper van Wezel,
Christoph Renner
Abstract:
In the presence of multiple bands, well-known electronic instabilities may acquire new complexity. While multiband superconductivity is the subject of extensive studies, the possibility of multiband charge density waves (CDWs) has been largely ignored so far. Here, combining energy dependent scanning tunnelling microscopy (STM) topography with a simple model of the charge modulations and a self-co…
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In the presence of multiple bands, well-known electronic instabilities may acquire new complexity. While multiband superconductivity is the subject of extensive studies, the possibility of multiband charge density waves (CDWs) has been largely ignored so far. Here, combining energy dependent scanning tunnelling microscopy (STM) topography with a simple model of the charge modulations and a self-consistent calculation of the CDW gap, we find evidence for a multiband CDW in 2H-NbSe$_2$. This CDW not only involves the opening of a gap on the inner band around the K-point, but also on the outer band. This leads to spatially out-of-phase charge modulations from electrons on these two bands, which we detect through a characteristic energy dependence of the CDW contrast in STM images.
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Submitted 29 January, 2021;
originally announced February 2021.
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Insight into the charge density wave gap from contrast inversion in topographic STM images
Authors:
Marcello Spera,
Alessandro Scarfato,
Árpad Pásztor,
Enrico Giannini,
David R. Bowler,
Christoph Renner
Abstract:
Charge density waves (CDWs) are understood in great details in one dimension, but they remain largely enigmatic in two dimensional systems. In particular, numerous aspects of the associated energy gap and the formation mechanism are not fully understood. Two long standing riddles are the amplitude and position of the CDW gap with respect to the Fermi level ($E_F$) and the frequent absence of CDW c…
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Charge density waves (CDWs) are understood in great details in one dimension, but they remain largely enigmatic in two dimensional systems. In particular, numerous aspects of the associated energy gap and the formation mechanism are not fully understood. Two long standing riddles are the amplitude and position of the CDW gap with respect to the Fermi level ($E_F$) and the frequent absence of CDW contrast inversion (CI) between opposite bias scanning tunneling microscopy (STM) images. Here, we find compelling evidence that these two issues are intimately related. Combining density functional theory and STM to analyse the CDW pattern and modulation amplitude in 1$T$-TiSe$_2$, we find that CI takes place at an unexpected negative sample bias because the CDW gap opens away from $E_F$, deep inside the valence band. This bias becomes increasingly negative as the CDW gap shifts to higher binding energy with electron doping. This study shows the importance of CI in STM images to identify periodic modulations with a CDW and to gain valuable insight into the CDW gap, whose measurement is notoriously controversial.
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Submitted 2 December, 2020; v1 submitted 4 December, 2019;
originally announced December 2019.
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Scanning Tunneling Microscopy of an Air Sensitive Dichalcogenide Through an Encapsulating Layer
Authors:
Jose Martinez-Castro,
Diego Mauro,
Árpád Pásztor,
Ignacio Gutiérrez-Lezama,
Alessandro Scarfato,
Alberto F. Morpurgo,
Christoph Renner
Abstract:
Many atomically thin exfoliated 2D materials degrade when exposed to ambient conditions. They can be protected and investigated by means of transport and optical measurements if they are encapsulated between chemically inert single layers in the controlled atmosphere of a glove box. Here, we demonstrate that the same encapsulation procedure is also compatible with scanning tunneling microscopy (ST…
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Many atomically thin exfoliated 2D materials degrade when exposed to ambient conditions. They can be protected and investigated by means of transport and optical measurements if they are encapsulated between chemically inert single layers in the controlled atmosphere of a glove box. Here, we demonstrate that the same encapsulation procedure is also compatible with scanning tunneling microscopy (STM) and spectroscopy (STS). To this end, we report a systematic STM/STS investigation of a model system consisting of an exfoliated 2H-NbSe2 crystal capped with a protective 2H-MoS2 monolayer. We observe different electronic coupling between MoS2 and NbSe2, from a strong coupling when their lattices are aligned within a few degrees to 2
essentially no coupling for 30° misaligned layers. We show that STM always probes intrinsic NbSe2 properties such as the superconducting gap and charge density wave at low temperature when setting the tunneling bias inside the MoS2 band gap, irrespective of the relative angle between the NbSe2 and MoS2 lattices. This study demonstrates that encapsulation is fully compatible with STM/STS investigations of 2D materials.
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Submitted 13 February, 2019;
originally announced February 2019.
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Towards surface diffusion potential mapping on atomic length scale
Authors:
Renan Villarreal,
Christopher J. Kirkham,
Alessandro Scarfato,
David R. Bowler,
Christoph Renner
Abstract:
The surface diffusion potential landscape plays an essential role in a number of physical and chemical processes such as self-assembly and catalysis. Diffusion energy barriers can be calculated theoretically for simple systems, but there is currently no experimental technique to systematically measure them on the relevant atomic length scale. Here, we introduce an atomic force microscopy based met…
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The surface diffusion potential landscape plays an essential role in a number of physical and chemical processes such as self-assembly and catalysis. Diffusion energy barriers can be calculated theoretically for simple systems, but there is currently no experimental technique to systematically measure them on the relevant atomic length scale. Here, we introduce an atomic force microscopy based method to semiquantitatively map the surface diffusion potential on an atomic length scale. In this proof of concept experiment, we show that the atomic force microscope damping signal at constant frequency-shift can be linked to nonconservative processes associated with the lowering of energy barriers and compared with calculated single-atom diffusion energy barriers.
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Submitted 26 May, 2019; v1 submitted 6 December, 2018;
originally announced December 2018.
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Holographic imaging of the complex charge density wave order parameter
Authors:
Árpád Pásztor,
Alessandro Scarfato,
Marcello Spera,
Céline Barreteau,
Enrico Giannini,
Christoph Renner
Abstract:
The charge density wave (CDW) in solids is a collective ground state combining lattice distortions and charge ordering. It is defined by a complex order parameter with an amplitude and a phase. The amplitude and wavelength of the charge modulation are readily accessible to experiment. However, accurate measurements of the corresponding phase are significantly more challenging. Here we combine reci…
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The charge density wave (CDW) in solids is a collective ground state combining lattice distortions and charge ordering. It is defined by a complex order parameter with an amplitude and a phase. The amplitude and wavelength of the charge modulation are readily accessible to experiment. However, accurate measurements of the corresponding phase are significantly more challenging. Here we combine reciprocal and real space information to map the full complex order parameter based on topographic scanning tunneling microscopy (STM) images. Our technique overcomes limitations of earlier Fourier space based techniques to achieve distinct amplitude and phase images with high spatial resolution. Applying this analysis to transition metal dichalcogenides provides striking evidence that their CDWs consist of three individual charge modulations whose ordering vectors are connected by the fundamental rotational symmetry of the crystalline lattice. Spatial variations in the relative phases of these three modulations account for the different contrasts often observed in STM topographic images. Phase images further reveal topological defects and discommensurations, a singularity predicted by theory for a nearly commensurate CDW. Such precise real space mapping of the complex order parameter provides a powerful tool for a deeper understanding of the CDW ground state whose formation mechanisms remain largely unclear.
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Submitted 22 June, 2018;
originally announced June 2018.
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Hole Transport in Exfoliated Monolayer MoS$_2$
Authors:
Evgeniy Ponomarev,
Árpád Pásztor,
Adrien Waelchli,
Alessandro Scarfato,
Nicolas Ubrig,
Christoph Renner,
Alberto F. Morpurgo
Abstract:
Ideal monolayers of common semiconducting transition metal dichalcogenides (TMDCs) such as MoS$_2$, WS$_2$, MoSe$_2$, and WSe$_2$ possess many similar electronic properties. As it is the case for all semiconductors, however, the physical response of these systems is strongly determined by defects in a way specific to each individual compound. Here we investigate the ability of exfoliated monolayer…
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Ideal monolayers of common semiconducting transition metal dichalcogenides (TMDCs) such as MoS$_2$, WS$_2$, MoSe$_2$, and WSe$_2$ possess many similar electronic properties. As it is the case for all semiconductors, however, the physical response of these systems is strongly determined by defects in a way specific to each individual compound. Here we investigate the ability of exfoliated monolayers of these TMDCs to support high-quality, well-balanced ambipolar conduction, which has been demonstrated for WS$_2$, MoSe$_2$, and WSe$_2$, but not for MoS$_2$. Using ionic-liquid gated transistors we show that, contrary to WS$_2$, MoSe$_2$, and WSe$_2$, hole transport in exfoliated MoS$_2$ monolayers is systematically anomalous, exhibiting a maximum in conductivity at negative gate voltage (V$_G$) followed by a suppression of up to 100 times upon further increasing V$_G$. To understand the origin of this difference we have performed a series of experiments including the comparison of hole transport in MoS$_2$ monolayers and thicker multilayers, in exfoliated and CVD-grown monolayers, as well as gate-dependent optical measurements (Raman and photoluminescence) and scanning tunneling imaging and spectroscopy. In agreement with existing {\it ab-initio} calculations, the results of all these experiments are consistently explained in terms of defects associated to chalcogen vacancies that only in MoS$_2$ monolayers -- but not in thicker MoS$_2$ multilayers nor in monolayers of the other common semiconducting TMDCs -- create in-gap states near the top of the valence band that act as strong hole traps. Our results demonstrate the importance of studying systematically how defects determine the properties of 2D semiconducting materials and of developing methods to control them.
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Submitted 24 April, 2018;
originally announced April 2018.
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Electronic coupling between Bi nanolines and the Si(001) substrate: An experimental and theoretical study
Authors:
M. Longobardi,
C. J. Kirkham,
R. Villarreal,
S. A. Koster,
D. R. Bowler,
Ch. Renner
Abstract:
Atomic nanolines are one dimensional systems realized by assembling many atoms on a substrate into long arrays. The electronic properties of the nanolines depend on those of the substrate. Here, we demonstrate that to fully understand the electronic properties of Bi nanolines on clean Si(001) several different contributions must be accounted for. Scanning tunneling microscopy reveals a variety of…
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Atomic nanolines are one dimensional systems realized by assembling many atoms on a substrate into long arrays. The electronic properties of the nanolines depend on those of the substrate. Here, we demonstrate that to fully understand the electronic properties of Bi nanolines on clean Si(001) several different contributions must be accounted for. Scanning tunneling microscopy reveals a variety of different patterns along the nanolines as the imaging bias is varied. We observe an electronic phase shift of the Bi dimers, associated with imaging atomic p-orbitals, and an electronic coupling between the Bi nanoline and neighbouring Si dimers, which influences the appearance of both. Understanding the interplay between the Bi nanolines and Si substrate could open a novel route to modifying the electronic properties of the nanolines.
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Submitted 5 December, 2017; v1 submitted 26 October, 2017;
originally announced October 2017.
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Energy-dependent spatial texturing of the charge order in $1T$-Cu$_x$TiSe$_2$
Authors:
Marcello Spera,
Alessandro Scarfato,
Enrico Giannini,
Christoph Renner
Abstract:
We report a detailed study of the microscopic effects of Cu intercalation on the charge density wave (CDW) in 1\textit{T}-Cu$_x$TiSe$_2$. Scanning tunneling microscopy and spectroscopy (STM/STS) reveal a unique, Cu driven spatial texturing of the charge ordered phase, with the appearance of energy dependent CDW patches and sharp $π$-phase shift domain walls ($π$DWs). The energy and doping dependen…
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We report a detailed study of the microscopic effects of Cu intercalation on the charge density wave (CDW) in 1\textit{T}-Cu$_x$TiSe$_2$. Scanning tunneling microscopy and spectroscopy (STM/STS) reveal a unique, Cu driven spatial texturing of the charge ordered phase, with the appearance of energy dependent CDW patches and sharp $π$-phase shift domain walls ($π$DWs). The energy and doping dependencies of the patchwork are directly linked to the inhomogeneous potential landscape due to the Cu intercalants. They imply a CDW gap with unusual features, including a large amplitude, the opening below the Fermi level and a shift to higher binding energy with electron doping. Unlike the patchwork, the $π$DWs occur independently of the intercalated Cu distribution. They remain atomically sharp throughout the investigated phase diagram and occur both in superconducting and non-superconducting specimen. These results provide unique atomic-scale insight on the CDW ground state, questioning the existence of incommensurate CDW domain walls and contributing to understand its formation mechanism and interplay with superconductivity.
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Submitted 14 December, 2018; v1 submitted 11 October, 2017;
originally announced October 2017.
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Sub-atomic electronic feature from dynamic motion of Si dimer defects in bismuth nanolines on Si(001)
Authors:
C. J. Kirkham,
M. Longobardi,
S. A. Koster,
Ch. Renner,
D. R. Bowler
Abstract:
Scanning tunneling microscopy (STM) reveals unusual sharp features in otherwise defect free bismuth nanolines self-assembled on Si(001). They appear as subatomic thin lines perpendicular to the bismuth nanoline at positive biases and as atomic size beads at negative biases. Density functional theory (DFT) simulations show that these features can be attributed to buckled Si dimers substituting for…
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Scanning tunneling microscopy (STM) reveals unusual sharp features in otherwise defect free bismuth nanolines self-assembled on Si(001). They appear as subatomic thin lines perpendicular to the bismuth nanoline at positive biases and as atomic size beads at negative biases. Density functional theory (DFT) simulations show that these features can be attributed to buckled Si dimers substituting for Bi dimers in the nanoline, where the sharp feature is the counterintuitive signature of these dimers flipping during scanning. The perfect correspondence between the STM data and the DFT simulation demonstrated in this study highlights the detailed understanding we have of the complex Bi-Si(001) Haiku system.
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Submitted 3 May, 2017;
originally announced May 2017.
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Observation of Caroli-de Gennes-Matricon Vortex States in YBa$_2$Cu$_3$O$_{7-δ}$
Authors:
Christophe Berthod,
Ivan Maggio-Aprile,
Jens Bruér,
Andreas Erb,
Christoph Renner
Abstract:
The copper oxides present the highest superconducting temperature and properties at odds with other compounds, suggestive of a fundamentally different superconductivity. In particular, the Abrikosov vortices fail to exhibit localized states expected and observed in all clean superconductors. We have explored the possibility that the elusive vortex-core signatures are actually present but weak. Com…
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The copper oxides present the highest superconducting temperature and properties at odds with other compounds, suggestive of a fundamentally different superconductivity. In particular, the Abrikosov vortices fail to exhibit localized states expected and observed in all clean superconductors. We have explored the possibility that the elusive vortex-core signatures are actually present but weak. Combining local tunneling measurements with large-scale theoretical modeling, we positively identify the vortex states in YBa$_2$Cu$_3$O$_{7-δ}$. We explain their spectrum and the observed variations thereof from one vortex to the next by considering the effects of nearby vortices and disorder in the vortex lattice. We argue that the superconductivity of copper oxides is conventional, but the spectroscopic signature does not look so because the superconducting carriers are a minority.
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Submitted 5 December, 2017; v1 submitted 25 April, 2017;
originally announced April 2017.
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Dimensional cross-over of the charge density wave order parameter in thin exfoliated 1T-VSe$_2$
Authors:
Árpád Pásztor,
Alessandro Scarfato,
Céline Barreteau,
Enrico Giannini,
Christoph Renner
Abstract:
The capability to isolate one to few unit-cell thin layers from the bulk matrix of layered compounds opens fascinating prospects to engineer novel electronic phases. However, a comprehensive study of the thickness dependence and of potential extrinsic effects are paramount to harness the electronic properties of such atomic foils. One striking example is the charge density wave (CDW) transition te…
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The capability to isolate one to few unit-cell thin layers from the bulk matrix of layered compounds opens fascinating prospects to engineer novel electronic phases. However, a comprehensive study of the thickness dependence and of potential extrinsic effects are paramount to harness the electronic properties of such atomic foils. One striking example is the charge density wave (CDW) transition temperature in layered dichalcogenides whose thickness dependence remains unclear in the ultrathin limit. Here we present a detailed study of the thickness and temperature dependences of the CDW in VSe$_2$ by scanning tunnelling microscopy (STM). We show that mapping the real-space CDW periodicity over a broad thickness range unique to STM provides essential insight. We introduce a robust derivation of the local order parameter and transition temperature based on the real space charge modulation amplitude. Both quantities exhibit a striking non-monotonic thickness dependence that we explain in terms of a 3D to 2D dimensional crossover in the FS topology. This finding highlights thickness as a true tuning parameter of the electronic ground state and reconciles seemingly contradicting thickness dependencies determined in independent transport studies.
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Submitted 21 March, 2017;
originally announced March 2017.
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Stripe and short range order in the charge density wave of 1T-Cu$_x$TiSe$_2$
Authors:
A. M. Novello,
M. Spera,
A. Scarfato,
A. Ubaldini,
E. Giannini,
D. R. Bowler,
Ch. Renner
Abstract:
We study the impact of Cu intercalation on the charge density wave (CDW) in 1T-Cu$_{\text{x}}$TiSe$_{\text{2}}$ by scanning tunneling microscopy and spectroscopy. Cu atoms, identified through density functional theory modeling, are found to intercalate randomly on the octahedral site in the van der Waals gap and to dope delocalized electrons near the Fermi level. While the CDW modulation period do…
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We study the impact of Cu intercalation on the charge density wave (CDW) in 1T-Cu$_{\text{x}}$TiSe$_{\text{2}}$ by scanning tunneling microscopy and spectroscopy. Cu atoms, identified through density functional theory modeling, are found to intercalate randomly on the octahedral site in the van der Waals gap and to dope delocalized electrons near the Fermi level. While the CDW modulation period does not depend on Cu content, we observe the formation of charge stripe domains at low Cu content (x$<$0.02) and a breaking up of the commensurate order into 2$\times$2 domains at higher Cu content. The latter shrink with increasing Cu concentration and tend to be phase-shifted. These findings invalidate a proposed excitonic pairing as the primary CDW formation mechanism in this material.
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Submitted 22 September, 2016;
originally announced September 2016.
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Structure of self-assembled Mn atom chains on Si(001)
Authors:
R. Villarreal,
M. Longobardi,
S. A. Köster,
Ch. J. Kirkham,
D. Bowler,
Ch. Renner
Abstract:
Mn has been found to self-assemble into atomic chains running perpendicular to the surface dimer reconstruction on Si(001). They differ from other atomic chains by a striking asymmetric appearance in filled state scanning tunneling microscopy (STM) images. This has prompted complicated structural models involving up to three Mn atoms per chain unit. Combining STM, atomic force microscopy and densi…
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Mn has been found to self-assemble into atomic chains running perpendicular to the surface dimer reconstruction on Si(001). They differ from other atomic chains by a striking asymmetric appearance in filled state scanning tunneling microscopy (STM) images. This has prompted complicated structural models involving up to three Mn atoms per chain unit. Combining STM, atomic force microscopy and density functional theory we find that a simple necklace-like chain of single Mn atoms reproduces all their prominent features, including their asymmetry not captured by current models. The upshot is a remarkably simpler structure for modelling the electronic and magnetic properties of Mn atom chains on Si(001).
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Submitted 28 October, 2015;
originally announced October 2015.
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Revisiting the vortex-core tunnelling spectroscopy in YBa$_2$Cu$_3$O$_{7-δ}$
Authors:
Jens Bruér,
Ivan Maggio-Aprile,
Nathan Jenkins,
Zoran Ristić,
Andreas Erb,
Christophe Berthod,
Øystein Fischer,
Christoph Renner
Abstract:
The observation by scanning tunnelling spectroscopy (STS) of Abrikosov vortex cores in the high-temperature superconductor YBa$_2$Cu$_3$O$_{7-δ}$ (Y123) has revealed a robust pair of electron-hole symmetric states at finite subgap energy. Their interpretation remains an open question because theory predicts a different signature in the vortex cores, characterised by a strong zero-bias conductance…
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The observation by scanning tunnelling spectroscopy (STS) of Abrikosov vortex cores in the high-temperature superconductor YBa$_2$Cu$_3$O$_{7-δ}$ (Y123) has revealed a robust pair of electron-hole symmetric states at finite subgap energy. Their interpretation remains an open question because theory predicts a different signature in the vortex cores, characterised by a strong zero-bias conductance peak. We present STS data on very homogeneous Y123 at 0.4 K revealing that the subgap features do not belong to vortices: they are actually observed everywhere along the surface with high spatial and energy reproducibility, even in the absence of magnetic field. Detailed analysis and modelling show that these states remain unpaired in the superconducting phase and belong to an incoherent channel which contributes to the tunnelling signal in parallel with the superconducting density of states.
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Submitted 1 April, 2016; v1 submitted 24 July, 2015;
originally announced July 2015.
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STM microscopy of the CDW in 1T-TiSe2 in the presence of single atom defects
Authors:
A. M. Novello,
B. Hildebrand,
A. Scarfato,
C. Didiot,
G. Monney,
A. Ubaldini,
H. Berger,
D. R. Bowler,
P. Aebi,
Ch. Renner
Abstract:
We present a detailed low temperature scanning tunneling microscopy study of the commensurate charge density wave (CDW) in 1$T$-TiSe$_2$ in the presence of single atom defects. We find no significant modification of the CDW lattice in single crystals with native defects concentrations where some bulk probes already measure substantial reductions in the CDW phase transition signature. Systematic an…
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We present a detailed low temperature scanning tunneling microscopy study of the commensurate charge density wave (CDW) in 1$T$-TiSe$_2$ in the presence of single atom defects. We find no significant modification of the CDW lattice in single crystals with native defects concentrations where some bulk probes already measure substantial reductions in the CDW phase transition signature. Systematic analysis of STM micrographs combined with density functional theory modelling of atomic defect patterns indicate that the observed CDW modulation lies in the Se surface layer. The defect patterns clearly show there are no 2$H$-polytype inclusions in the CDW phase, as previously found at room temperature [Titov A.N. et al, Phys. Sol. State 53, 1073 (2011). They further provide an alternative explanation for the chiral Friedel oscillations recently reported in this compound [J. Ishioka et al., Phys. Rev. B 84, 245125, (2011)].
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Submitted 19 July, 2015; v1 submitted 22 February, 2015;
originally announced February 2015.
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Surface transport and band gap structure of exfoliated 2H-MoTe$_2$ crystals
Authors:
Ignacio Gutiérrez Lezama,
Alberto Ubaldini,
Maria Longobardi,
Enrico Giannini,
Christoph Renner,
Alexey B. Kuzmenko,
Alberto F. Morpurgo
Abstract:
Semiconducting transition metal dichalcogenides (TMDs) have emerged as materials that can be used to realize two-dimensional (2D) crystals possessing rather unique transport and optical properties. Most research has so far focused on sulfur and selenium compounds, while tellurium-based materials attracted little attention so far. As a first step in the investigation of Te-based semiconducting TMDs…
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Semiconducting transition metal dichalcogenides (TMDs) have emerged as materials that can be used to realize two-dimensional (2D) crystals possessing rather unique transport and optical properties. Most research has so far focused on sulfur and selenium compounds, while tellurium-based materials attracted little attention so far. As a first step in the investigation of Te-based semiconducting TMDs in this context, we have studied MoTe$_2$ crystals with thicknesses above 4 nm, focusing on surface transport and a quantitative determination of the gap structure. Using ionic-liquid gated transistors, we show that ambipolar transport at the surface of the material is reproducibly achieved, with hole and electron mobility values between 10 and 30 cm$^2$/Vs at room temperature. The gap structure is determined through three different techniques: ionic-liquid gated transistors and scanning tunneling spectroscopy, that allow the measurement of the indirect gap ($E_{ind}$), and optical transmission spectroscopy on crystals of different thickness, that enables the determination of both the direct ($E_{dir}$) and the indirect gap. We find that at room temperature $E_{ind}$ = 0.88 eV and $E_{dir}$ = 1.02 eV. Our results suggest that thin MoTe$_2$ layers may exhibit a transition to a direct gap before mono-layer thickness. They should also drastically extend the range of direct gaps accessible in 2D semiconducting TMDs.
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Submitted 4 July, 2014;
originally announced July 2014.
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Doping nature of native defects in 1T-TiSe2
Authors:
B. Hildebrand,
C. Didiot,
A. M. Novello,
G. Monney,
A. Scarfato,
A. Ubaldini,
H. Berger,
D. R. Bowler,
C. Renner,
P. Aebi
Abstract:
The transition metal dichalcogenide 1T-TiSe2 is a quasi two-dimensional layered material with a charge density wave (CDW) transition temperature of TCDW 200 K. Self-doping effects for crystals grown at different temperatures introduce structural defects, modify the temperature dependent resistivity and strongly perturbate the CDW phase. Here we study the structural and doping nature of such native…
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The transition metal dichalcogenide 1T-TiSe2 is a quasi two-dimensional layered material with a charge density wave (CDW) transition temperature of TCDW 200 K. Self-doping effects for crystals grown at different temperatures introduce structural defects, modify the temperature dependent resistivity and strongly perturbate the CDW phase. Here we study the structural and doping nature of such native defects combining scanning tunneling microscopy/spectroscopy and ab initio calculations. The dominant native single atom dopants we identify in our single crystals are intercalated Ti atoms, Se vacancies and Se substitutions by residual iodine and oxygen.
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Submitted 2 May, 2014; v1 submitted 28 March, 2014;
originally announced March 2014.
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Half-filled orbital and unconventional geometry of a common dopant in Si(001)
Authors:
K. Iwaya,
D. R. Bowler,
V. Brazdova,
A. Ferreira da Silva,
Ch. Renner,
W. Wu,
A. J. Fisher,
A. M. Stoneham,
G. Aeppli
Abstract:
The determining factor of the bulk properties of doped Si is the column rather than the row in the periodic table from which the dopants are drawn. It is unknown whether the basic properties of dopants at surfaces and interfaces, steadily growing in importance as microelectronic devices shrink, are also solely governed by their column of origin. The common light impurity P replaces individual Si a…
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The determining factor of the bulk properties of doped Si is the column rather than the row in the periodic table from which the dopants are drawn. It is unknown whether the basic properties of dopants at surfaces and interfaces, steadily growing in importance as microelectronic devices shrink, are also solely governed by their column of origin. The common light impurity P replaces individual Si atoms and maintains the integrity of the dimer superstructure of the Si(001) surface, but loses its valence electrons to surface states. Here we report that isolated heavy dopants are entirely different: Bi atoms form pairs with Si vacancies, retain their electrons and have highly localized, half-filled orbitals.
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Submitted 8 July, 2013;
originally announced July 2013.
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Imaging Oxygen Defects and their Motion at a Manganite Surface
Authors:
Benjamin Bryant,
Christoph Renner,
Yusuke Tokunaga,
Yoshinori Tokura,
Gabriel Aeppli
Abstract:
Manganites are technologically important materials, used widely as solid oxide fuel cell cathodes: they have also been shown to exhibit electroresistance. Oxygen bulk diffusion and surface exchange processes are critical for catalytic action, and numerous studies of manganites have linked electroresistance to electrochemical oxygen migration. Direct imaging of individual oxygen defects is needed t…
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Manganites are technologically important materials, used widely as solid oxide fuel cell cathodes: they have also been shown to exhibit electroresistance. Oxygen bulk diffusion and surface exchange processes are critical for catalytic action, and numerous studies of manganites have linked electroresistance to electrochemical oxygen migration. Direct imaging of individual oxygen defects is needed to underpin understanding of these important processes. It is not currently possible to collect the required images in the bulk, but scanning tunnelling microscopy could provide such data for surfaces. Here we show the first atomic resolution images of oxygen defects at a manganite surface. Our experiments also reveal defect dynamics, including oxygen adatom migration, vacancy-adatom recombination and adatom bistability. Beyond providing an experimental basis for testing models describing the microscopics of oxygen migration at transition metal oxide interfaces, our work resolves the long-standing puzzle of why scanning tunnelling microscopy is more challenging for layered manganites than for cuprates.
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Submitted 4 October, 2011;
originally announced October 2011.
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Endotaxial Si nanolines in Si(001):H
Authors:
F. Bianco,
J. H. G. Owen,
S. A. Köster,
D. Mazur,
D. R. Bowler,
Ch. Renner
Abstract:
We present a detailed study of the structural and electronic properties of a self-assembled silicon nanoline embedded in the H-terminated silicon (001) surface, known as the Haiku stripe. The nanoline is a perfectly straight and defect free endotaxial structure of huge aspect ratio; it can grow micrometre long at a constant width of exactly four Si dimers (1.54nm). Another remarkable property is i…
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We present a detailed study of the structural and electronic properties of a self-assembled silicon nanoline embedded in the H-terminated silicon (001) surface, known as the Haiku stripe. The nanoline is a perfectly straight and defect free endotaxial structure of huge aspect ratio; it can grow micrometre long at a constant width of exactly four Si dimers (1.54nm). Another remarkable property is its capacity to be exposed to air without suffering any degradation. The nanoline grows independently of any step edges at tunable densities, from isolated nanolines to a dense array of nanolines. In addition to these unique structural characteristics, scanning tunnelling microscopy and density functional theory reveal a one-dimensional state confined along the Haiku core. This nanoline is a promising candidate for the long sought after electronic solid-state one-dimensional model system to explore the fascinating quantum properties emerging in such reduced dimensionality.
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Submitted 16 March, 2011;
originally announced March 2011.
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Piezoresistance in silicon at uniaxial compressive stresses up to 3 GPa
Authors:
J. S. Milne,
I. Favorskiy,
A. C. H. Rowe,
S. Arscott,
Ch. Renner
Abstract:
The room-temperature longitudinal piezoresistance of n-type and p-type crystalline silicon along selected crystal axes is investigated under uniaxial compressive stresses up to 3 GPa. While the conductance ($G$) of n-type silicon eventually saturates at $\approx 45%$ of its zero-stress value ($G_0$) in accordance with the charge transfer model, in p-type material $G/G_0$ increases above a predicte…
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The room-temperature longitudinal piezoresistance of n-type and p-type crystalline silicon along selected crystal axes is investigated under uniaxial compressive stresses up to 3 GPa. While the conductance ($G$) of n-type silicon eventually saturates at $\approx 45%$ of its zero-stress value ($G_0$) in accordance with the charge transfer model, in p-type material $G/G_0$ increases above a predicted limit of $\approx 4.5$ without any significant saturation, even at 3 GPa. Calculation of $G/G_0$ using \textit{ab-initio} density functional theory reveals that neither $G$ nor the mobility, when properly averaged over the hole distribution, saturate at stresses lower than 3 GPa. The lack of saturation has important consequences for strained silicon technologies.
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Submitted 25 September, 2012; v1 submitted 12 November, 2010;
originally announced November 2010.
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On giant piezoresistance effects in silicon nanowires and microwires
Authors:
J. S. Milne,
S. Arscott,
C. Renner,
A. C. H. Rowe
Abstract:
The giant piezoresistance (PZR) previously reported in silicon nanowires is experimentally investigated in a large number of surface depleted silicon nano- and micro-structures. The resistance is shown to vary strongly with time due to electron and hole trapping at the sample surfaces. Importantly, this time varying resistance manifests itself as an apparent giant PZR identical to that reported el…
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The giant piezoresistance (PZR) previously reported in silicon nanowires is experimentally investigated in a large number of surface depleted silicon nano- and micro-structures. The resistance is shown to vary strongly with time due to electron and hole trapping at the sample surfaces. Importantly, this time varying resistance manifests itself as an apparent giant PZR identical to that reported elsewhere. By modulating the applied stress in time, the true PZR of the structures is found to be comparable with that of bulk silicon.
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Submitted 8 October, 2010;
originally announced October 2010.
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One dimensional Si-in-Si(001) template for single-atom wire growth
Authors:
J. H. G. Owen,
F. Bianco,
S. A. Köster,
D. Mazur,
D. R. Bowler,
Ch. Renner
Abstract:
Single atom metallic wires of arbitrary length are of immense technological and scientific interest. We describe a novel silicon-only template enabling the self-organised growth of isolated micrometer long surface and subsurface single-atom chains. It consists of a one dimensional, defect-free reconstruction - the Haiku core, here revealed for the first time in details - self-assembled on hydrogen…
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Single atom metallic wires of arbitrary length are of immense technological and scientific interest. We describe a novel silicon-only template enabling the self-organised growth of isolated micrometer long surface and subsurface single-atom chains. It consists of a one dimensional, defect-free reconstruction - the Haiku core, here revealed for the first time in details - self-assembled on hydrogenated Si(001) terraces, independent of any step edges. We discuss the potential of this Si-in-Si template as an appealing alternative to vicinal surfaces for nanoscale patterning.
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Submitted 13 July, 2010;
originally announced July 2010.
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Molecular Thin Films: a New Type of Magnetic Switch
Authors:
S. M. Heutz,
C. Mitra,
W. Wu,
A. J. Fisher,
A. Kerridge,
A. M. Stoneham,
A. H. Harker,
J. Gardener,
Hsiang-Han Tseng,
T. S. Jones,
C. Renner,
G. Aeppli
Abstract:
The design and fabrication of materials that exhibit both semiconducting and magnetic properties for spintronics and quantum computing has proven difficult. Important starting points are high-purity thin films as well as fundamental theoretical understanding of the magnetism. Here we show that small molecules have great potential in this area, due to ease of insertion of localised spins in organ…
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The design and fabrication of materials that exhibit both semiconducting and magnetic properties for spintronics and quantum computing has proven difficult. Important starting points are high-purity thin films as well as fundamental theoretical understanding of the magnetism. Here we show that small molecules have great potential in this area, due to ease of insertion of localised spins in organic frameworks and both chemical and structural purity. In particular, we demonstrate that archetypal molecular semiconductors, namely the metal phthalocyanines (Pc), can be readily fabricated as thin film quantum antiferromagnets, important precursors to a solid state quantum computer. Their magnetic state can be switched via fabrication steps which modify the film structure, offering practical routes into information processing. Theoretical calculations show that a new mechanism, which is the molecular analogue of the interactions between magnetic ions in metals, is responsible for the magnetic states. Our combination of theory and experiments opens the field of organic thin film magnetic engineering.
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Submitted 5 May, 2008;
originally announced May 2008.
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Giant room temperature piezoresistance in a metal/silicon hybrid
Authors:
A. C. H. Rowe,
A. Donoso-Barrera,
Ch. Renner,
S. Arscott
Abstract:
Metal/semiconductor hybrids are artificially created structures presenting novel properties not exhibited by either of the component materials alone. Here we present a giant piezoresistance effect in a hybrid formed from silicon and aluminum. The maximum piezoresistive gage factor (GF) of 843, measured at room temperature, compares with a GF of -93 measured in the bulk homogeneous silicon. This…
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Metal/semiconductor hybrids are artificially created structures presenting novel properties not exhibited by either of the component materials alone. Here we present a giant piezoresistance effect in a hybrid formed from silicon and aluminum. The maximum piezoresistive gage factor (GF) of 843, measured at room temperature, compares with a GF of -93 measured in the bulk homogeneous silicon. This piezoresistance boost is not due to the silicon/aluminum interface, but results from a stress induced anisotropy in the silicon conductivity that acts to switch current away from the highly conductive aluminum for uniaxial tensile strains. Its magnitude is shown, via the calculation of hybrid resistivity weighting functions, to depend only on the geometrical arrangement of the component parts of the hybrid.
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Submitted 5 March, 2008;
originally announced March 2008.
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Scanning tunneling spectroscopy of high-temperature superconductors
Authors:
Oystein Fischer,
Martin Kugler,
Ivan Maggio-Aprile,
Christophe Berthod,
Christoph Renner
Abstract:
Tunneling spectroscopy played a central role in the experimental verification of the microscopic theory of superconductivity in the classical superconductors. Initial attempts to apply the same approach to high-temperature superconductors were hampered by various problems related to the complexity of these materials. The use of scanning tunneling microscopy/spectroscopy (STM/STS) on these compou…
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Tunneling spectroscopy played a central role in the experimental verification of the microscopic theory of superconductivity in the classical superconductors. Initial attempts to apply the same approach to high-temperature superconductors were hampered by various problems related to the complexity of these materials. The use of scanning tunneling microscopy/spectroscopy (STM/STS) on these compounds allowed to overcome the main difficulties. This success motivated a rapidly growing scientific community to apply this technique to high-temperature superconductors. This paper reviews the experimental highlights obtained over the last decade. We first recall the crucial efforts to gain control over the technique and to obtain reproducible results. We then discuss how the STM/STS technique has contributed to the study of some of the most unusual and remarkable properties of high-temperature superconductors: the unusual large gap values and the absence of scaling with the critical temperature; the pseudogap and its relation to superconductivity; the unprecedented small size of the vortex cores and its influence on vortex matter; the unexpected electronic properties of the vortex cores; the combination of atomic resolution and spectroscopy leading to the observation of periodic local density of states modulations in the superconducting and pseudogap states, and in the vortex cores.
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Submitted 24 October, 2006;
originally announced October 2006.
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Charge ordering, stripes and phase separation in manganese perovskite oxides: an STM/STS study
Authors:
Ch. Renner,
G. Aeppli,
H. M. Ronnow
Abstract:
A microscopic characterisation of the phase transitions associated with colossal magnetoresistance (CMR) in manganese perovskite oxides is a very important ingredient in the quest of understanding its underlying mechanism. Scanning tunneling microscopy (STM) is most suitable to investigate some of their reported hallmarks, including charge ordering, lattice distortions, and electronic phase sepa…
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A microscopic characterisation of the phase transitions associated with colossal magnetoresistance (CMR) in manganese perovskite oxides is a very important ingredient in the quest of understanding its underlying mechanism. Scanning tunneling microscopy (STM) is most suitable to investigate some of their reported hallmarks, including charge ordering, lattice distortions, and electronic phase separation. Here we investigate Bi1-XCaXMnO3 (BCMO) with x=0.76. At this composition, BCMO develops an insulating charge-ordered phase upon cooling, whose study as a function of temperature will allow identifying atomic scale characteristics of the metal-insulator phase transition (MIT). We observe distinct atomic scale phases at temperatures above and below the MIT, with very different electronic and structural characteristics. Combining STM micrographs and current-voltage tunneling characteristics, we find that charge ordering correlates both with the local conduction state (metallic or insulating) and the local structural order. Furthermore, STM shows coexistence of these phases as expected for a first order phase transition.
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Submitted 5 November, 2005;
originally announced November 2005.
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Polarons and confinement of electronic motion to two dimensions in a layered transition metal oxide
Authors:
H. M. Ronnow,
Ch. Renner,
G. Aeppli,
T. Kimura,
Y. Tokura
Abstract:
A very remarkable feature of the layered transition metal oxides (TMOs), whose most famous members are the high-temperature superconductors (HTSs), is that even though they are prepared as bulk three-dimensional single crystals, they display hugely anisotropic electrical and optical properties, seeming to be insulating perpendicular to the layers and metallic within them. This is the phenomenon…
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A very remarkable feature of the layered transition metal oxides (TMOs), whose most famous members are the high-temperature superconductors (HTSs), is that even though they are prepared as bulk three-dimensional single crystals, they display hugely anisotropic electrical and optical properties, seeming to be insulating perpendicular to the layers and metallic within them. This is the phenomenon of confinement, a concept at odds with the conventional theory of solids and recognized as due to magnetic and electron-lattice interactions in the layers which must be overcome at a substantial energy cost if electrons are to be transferred between layers. The associated energy gap or 'pseudogap' is particularly obvious in experiments where charge is moved perpendicular to the planes, most notably scanning tunneling microscopy (STM) and polarized infrared spectroscopy. Here, using the same experimental tools, we show that there is a second family of TMOs - the layered manganites La2-2xSr1+2xMn2O7 (LSMO) - with even more extreme confinement and pseudogap effects. The data, which are the first to resolve atoms in any metallic manganite, demonstrate quantitatively that because they are attached to polarons - lattice and spin textures within the planes -, it is equally difficult to remove carriers from the planes via vacuum tunneling into a conventional metallic tip, as it is for them to move between Mn-rich layers within the material itself.
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Submitted 5 November, 2005;
originally announced November 2005.
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Yakhot's model of strong turbulence: A generalization of scaling models of turbulence
Authors:
Ch. Renner,
J. Peinke
Abstract:
We report on some implications of the theory of turbulence developed by V. Yakhot [V. Yakhot, Phys. Rev. E {\bf 57}(2) (1998)]. In particular we focus on the expression for the scaling exponents $ζ_{n}$. We show that Yakhot's result contains three well known scaling models as special cases, namely K41, K62 and the theory by V. L'vov and I. Procaccia [V. L'vov & I. Procaccia, Phys. Rev. E {\bf 62…
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We report on some implications of the theory of turbulence developed by V. Yakhot [V. Yakhot, Phys. Rev. E {\bf 57}(2) (1998)]. In particular we focus on the expression for the scaling exponents $ζ_{n}$. We show that Yakhot's result contains three well known scaling models as special cases, namely K41, K62 and the theory by V. L'vov and I. Procaccia [V. L'vov & I. Procaccia, Phys. Rev. E {\bf 62}(6) (2000)]. The model furthermore yields a theoretical justification for the method of extended self--similarity (ESS).
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Submitted 19 March, 2004;
originally announced March 2004.
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Atomic-scale images of charge ordering in a mixed-valence manganite
Authors:
Ch. Renner,
G. Aeppli,
B-G. Kim,
Yeong-Ah Soh,
S. -W. Cheong
Abstract:
Transition-metal perovskite oxides exhibit a wide range of extraordinary but imperfectly understood phenomena. Charge, spin, orbital, and lattice degrees of freedom all undergo order-disorder transitions in regimes not far from where the best-known of these phenomena, namely high-temperature superconductivity of the copper oxides, and the 'colossal' magnetoresistance of the manganese oxides, occ…
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Transition-metal perovskite oxides exhibit a wide range of extraordinary but imperfectly understood phenomena. Charge, spin, orbital, and lattice degrees of freedom all undergo order-disorder transitions in regimes not far from where the best-known of these phenomena, namely high-temperature superconductivity of the copper oxides, and the 'colossal' magnetoresistance of the manganese oxides, occur. Mostly diffraction techniques, sensitive either to the spin or the ionic core, have been used to measure the order. Unfortunately, because they are only weakly sensitive to valence electrons and yield superposition of signals from distinct mesoscopic phases, they cannot directly image mesoscopic phase coexistence and charge ordering, two key features of the manganites. Here we describe the first experiment to image charge ordering and phase separation in real space with atomic-scale resolution in a transition metal oxide. Our scanning tunneling microscopy (STM) data show that charge order is correlated with structural order, as well as with whether the material is locally metallic or insulating, thus giving an atomic-scale basis for descriptions of the manganites as mixtures of electronically and structurally distinct phases.
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Submitted 5 April, 2002;
originally announced April 2002.
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Unusual dependence of vortex core states on the superconducting gap in Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$
Authors:
B. W. Hoogenboom,
K. Kadowaki,
B. Revaz,
M. Li,
Ch. Renner,
Ø. Fischer
Abstract:
We present a scanning tunneling spectroscopy study on quasiparticle states in vortex cores in Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$. The energy of the observed vortex core states shows an approximately linear scaling with the superconducting gap in the region just outside the core. This clearly distinguishes them from conventional localized core states, and is a signature of the mechanism responsible fo…
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We present a scanning tunneling spectroscopy study on quasiparticle states in vortex cores in Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$. The energy of the observed vortex core states shows an approximately linear scaling with the superconducting gap in the region just outside the core. This clearly distinguishes them from conventional localized core states, and is a signature of the mechanism responsible for their discrete appearance in high-temperature superconductors. The energy scaling of the vortex core states also suggests a common nature of vortex cores in Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ and YBa$_2$Cu$_3$O$_{7-δ}$. Finally, the observed vortex core states do not show any dependence on the applied magnetic field in the range from 1 to 6 T.
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Submitted 28 May, 2001;
originally announced May 2001.
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Markov properties of high frequency exchange rate data
Authors:
C. Renner,
J. Peinke,
R. Friedrich
Abstract:
We present a stochastic analysis of a data set consisiting of 10^6 quotes of the US Doller - German Mark exchange rate. Evidence is given that the price changes x(tau) upon different delay times tau can be described as a Markov process evolving in tau. Thus, the tau-dependence of the probability density function (pdf) p(x) on the delay time tau can be described by a Fokker-Planck equation, a ger…
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We present a stochastic analysis of a data set consisiting of 10^6 quotes of the US Doller - German Mark exchange rate. Evidence is given that the price changes x(tau) upon different delay times tau can be described as a Markov process evolving in tau. Thus, the tau-dependence of the probability density function (pdf) p(x) on the delay time tau can be described by a Fokker-Planck equation, a gerneralized diffusion equation for p(x,tau). This equation is completely determined by two coefficients D_{1}(x,tau) and D_{2}(x,tau) (drift- and diffusion coefficient, respectively). We demonstrate how these coefficients can be estimated directly from the data without using any assumptions or models for the underlying stochastic process. Furthermore, it is shown that the solutions of the resulting Fokker-Planck equation describe the empirical pdfs correctly, including the pronounced tails.
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Submitted 2 April, 2001; v1 submitted 27 February, 2001;
originally announced February 2001.
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Shape and Motion of Vortex Cores in Bi_2Sr_2CaCu_2O_{8+δ}
Authors:
B. W. Hoogenboom,
M. Kugler,
B. Revaz,
I. Maggio-Aprile,
Ø. Fischer,
Ch. Renner
Abstract:
We present a detailed study on the behaviour of vortex cores in Bi_2Sr_2CaCu_2O_{8+δ} using scanning tunneling spectroscopy. The very irregular distribution and shape of the vortex cores imply a strong pinning of the vortices by defects and inhomogeneities. The observed vortex cores seem to consist of two or more randomly distributed smaller elements. Even more striking is the observation of vor…
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We present a detailed study on the behaviour of vortex cores in Bi_2Sr_2CaCu_2O_{8+δ} using scanning tunneling spectroscopy. The very irregular distribution and shape of the vortex cores imply a strong pinning of the vortices by defects and inhomogeneities. The observed vortex cores seem to consist of two or more randomly distributed smaller elements. Even more striking is the observation of vortex motion where the vortex cores are divided between two positions before totally moving from one position to the other. Both effects can be explained by quantum tunneling of vortices between different pinning centers.
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Submitted 7 August, 2000; v1 submitted 10 February, 2000;
originally announced February 2000.
