-
Sol-gel synthesis and multiferroic properties of pyrochlore-free Pb(Fe0.5Nb0.5)O3 thin films
Authors:
L. Imhoff,
M. B. Di Marco,
S. Barolin,
M. A. Rengifo,
M. H. Aguirre,
M. G. Stachiotti
Abstract:
Lead iron niobate (PbFe0.5Nb0.5O3 - PFN) thin films were synthesized by a modified sol-gel route, which offers the advantage of a rapid, simple and non-toxic reaction method. Polycrystalline perovskite-structured PFN thin films without pyrochlore phases were obtained on Pt/Ti/SiO2/Si substrates after sintering by rapid thermal annealing at 650 °C. TEM and AFM images confirmed the excellent quality…
▽ More
Lead iron niobate (PbFe0.5Nb0.5O3 - PFN) thin films were synthesized by a modified sol-gel route, which offers the advantage of a rapid, simple and non-toxic reaction method. Polycrystalline perovskite-structured PFN thin films without pyrochlore phases were obtained on Pt/Ti/SiO2/Si substrates after sintering by rapid thermal annealing at 650 °C. TEM and AFM images confirmed the excellent quality of the sintered film, while EDS spectroscopy revealed the presence of oxygen vacancies near the film/substrate interface. Electric measurements show good dielectric properties and ferroelectric behavior, characterized by typical C-V curves and well-defined P-E ferroelectric loops at 1 kHz, with remanent polarization values of ~12 uC/cm2. The polarization, however, increases with decreasing frequency, indicating the presence of leakage currents. I-V measurements show a significant increase in DC-conduction at relatively low fields (around 100 kV/cm). The films display ferromagnetic behavior at room temperature, with magnetic remanence around 30 emu/cm3 and a coercive field of 1 kOe. These values are significantly higher than those obtained for PFN powders fabricated by the same sol-gel route, as well as the magnetization values reported in the literature for epitaxial films.
△ Less
Submitted 9 November, 2023;
originally announced November 2023.
-
Coexistance of volatile and non-volatile memristive effects in phase-separated La$_{0.5}$Ca$_{0.5}$MnO$_{3}$-based devices
Authors:
G. A. Ramírez,
W. Román Acevedo,
M. Rengifo,
J. M. Nuñez,
M. H. Aguirre,
J. Briático,
D. Rubi
Abstract:
In this work, we have investigated the coexistance of volatile and non-volatile memristive effects in epitaxial phase-separated La$_{\text{0.5}}$Ca$_{\text{0.5}}$MnO$_{3}$ thin films. At low temperatures (50 K), we observed volatile resistive changes arising from self-heating effects in the vicinity of a metal-to-insulator transition. At higher temperatures (140 K and 200 K) we measured a combinat…
▽ More
In this work, we have investigated the coexistance of volatile and non-volatile memristive effects in epitaxial phase-separated La$_{\text{0.5}}$Ca$_{\text{0.5}}$MnO$_{3}$ thin films. At low temperatures (50 K), we observed volatile resistive changes arising from self-heating effects in the vicinity of a metal-to-insulator transition. At higher temperatures (140 K and 200 K) we measured a combination of volatile and non-volatile effects arising from the synergy between self-heating effects and ferromagnetic-metallic phase growth induced by an external electrical field. The results reported here add phase separated manganites to the list of materials which can electrically mimic, on the same device, the behavior of both neurons and synapses, a feature that might be useful for the development of neuromorphic computing hardware
△ Less
Submitted 9 November, 2022;
originally announced November 2022.
-
Optimization of the multi-mem response of topotactic redox La$_{1/2}$Sr$_{1/2}$Mn$_{1/2}$Co$_{1/2}$O$_{3-x}$
Authors:
W. Román Acevedo,
M. H. Aguirre,
C. Ferreyra,
M. J. Sánchez,
M. Rengifo,
C. A. M. van den Bosch,
A. Aguadero,
B. Noheda,
D. Rubi
Abstract:
Memristive systems emerge as strong candidates for the implementation of Resistive Random Access Memories (RRAM) and neuromorphic computing devices, as they can mimic the electrical analog behavior or biological synapses. In addition, complementary functionalities such as memcapacitance could significantly improve the performance of bio-inspired devices in key issues such as energy consumption. Ho…
▽ More
Memristive systems emerge as strong candidates for the implementation of Resistive Random Access Memories (RRAM) and neuromorphic computing devices, as they can mimic the electrical analog behavior or biological synapses. In addition, complementary functionalities such as memcapacitance could significantly improve the performance of bio-inspired devices in key issues such as energy consumption. However, the physics of mem-systems is not fully understood so far, hampering their large-scale implementation in devices. Perovskites that undergo topotactic transitions and redox reactions show improved performance as mem-systems, compared to standard perovskites. In this paper we analyze different strategies to optimize the multi-mem behavior (memristive and memcapacitive) of topotactic redox La$_{1/2}$Sr$_{1/2}$Mn$_{1/2}$Co$_{1/2}$O$_{3-x}$ (LSMCO) films grown on Nb:SrTiO$_3$ (NSTO). We explored devices with different crystallinity (from amorphous to epitaxial LSMCO), out-of-plane orientation ((001) and (110)) and stimulated either with voltage or current pulses. We found that an optimum memory response is found for epitaxial (110) LSMCO stimulated with current pulses. Under these conditions, the system efficiently exchanges oxygen with the environment minimizing, at the same time, self-heating effects that trigger nanostructural and chemical changes which could affect the device integrity and performance. Our work contributes to pave the way for the integration of LSMCO-based devices in cross-bar arrays, in order to exploit their memristive and memcapacitive properties for the development of neuromorphic or in-memory computing devices
△ Less
Submitted 7 October, 2021;
originally announced October 2021.
-
On the key role of oxygen vacancies electromigration in the memristive response of ferroelectric devices
Authors:
C. Ferreyra,
M. Rengifo,
M. J. Sánchez,
A. S. Everhard,
B. Noheda,
D. Rubi
Abstract:
Ferroelectric memristors are intensively studied due to their potential implementation in data storage and processing devices. In this work we show that the memristive behavior of metal/ferroelectric oxide/metal devices relies on the competition of two effects: the modulation of metal/ferroelectric interface barriers by the switchable ferroelectric polarization and the electromigration of oxygen v…
▽ More
Ferroelectric memristors are intensively studied due to their potential implementation in data storage and processing devices. In this work we show that the memristive behavior of metal/ferroelectric oxide/metal devices relies on the competition of two effects: the modulation of metal/ferroelectric interface barriers by the switchable ferroelectric polarization and the electromigration of oxygen vacancies, with the depolarizing field playing a fundamental role in the latter. We simulate our experimental results with a phenomenological model that includes both effects and we reproduce several non-trivial features of the electrical response, including resistance relaxations observed after external poling. Besides providing insight into the underlying physics of these complex devices, our work suggests that it is possible to combine non-volatile and volatile resistive changes in single ferroelectric memristors, an issue that could be useful for the development of neuromorphic devices.
△ Less
Submitted 18 June, 2020;
originally announced June 2020.
