Showing 1–10 of 10 results for author: Ren, D

Reshaping MOFs Text Mining with a Dynamic Multi-Agent Framework of Large Language Agents

Authors: Zuhong Lin, Daoyuan Ren, Kai Ran, Sun Jing, Xiaotiang Huang, Haiyang He, Pengxu Pan, Xiaohang Zhang, Ying Fang, Tianying Wang, Minli Wu, Zhanglin Li, Xiaochuan Zhang, Haipu Li, Jingjing Yao

Abstract: The mining of synthesis conditions for metal-organic frameworks (MOFs) is a significant focus in materials science. However, identifying the precise synthesis conditions for specific MOFs within the vast array of possibilities presents a considerable challenge. Large Language Models (LLMs) offer a promising solution to this problem. We leveraged the capabilities of LLMs, specifically gpt-4o-mini,… ▽ More The mining of synthesis conditions for metal-organic frameworks (MOFs) is a significant focus in materials science. However, identifying the precise synthesis conditions for specific MOFs within the vast array of possibilities presents a considerable challenge. Large Language Models (LLMs) offer a promising solution to this problem. We leveraged the capabilities of LLMs, specifically gpt-4o-mini, as core agents to integrate various MOF-related agents, including synthesis, attribute, and chemical information agents. This integration culminated in the development of MOFh6, an LLM tool designed to streamline the MOF synthesis process. MOFh6 allows users to query in multiple formats, such as submitting scientific literature, or inquiring about specific MOF codes or structural properties. The tool analyzes these queries to provide optimal synthesis conditions and generates model files for density functional theory pre modeling. We believe MOFh6 will enhance efficiency in the MOF synthesis of all researchers. △ Less

Submitted 26 April, 2025; originally announced April 2025.

Quasi van der Waals Epitaxial Growth of GaAsSb Nanowires on Graphitic Substrate for Photonic Applications

Authors: Dingding Ren, Tron A. Nilsen, Julie S. Nilsen, Lyubomir Ahtapodov, Anjan Mukherjee, Yang Li, Antonius T. J. van Helvoort, Helge Weman, Bjørn-Ove Fimland

Abstract: III-V semiconductor nanowires are considered promising building blocks for advanced photonic devices. One of the key advantages is that the lattice mismatch can easily be accommodated in 1D structures, resulting in superior heteroepitaxial quality compared to thin films. However, few reports break the limitation of using bulk crystalline materials as substrates for epitaxial growth of high-quality… ▽ More III-V semiconductor nanowires are considered promising building blocks for advanced photonic devices. One of the key advantages is that the lattice mismatch can easily be accommodated in 1D structures, resulting in superior heteroepitaxial quality compared to thin films. However, few reports break the limitation of using bulk crystalline materials as substrates for epitaxial growth of high-quality photonic 1D components, making monolithic integration of III-V components on arbitrary substrates challenging. In this work, we show that the growth of self-catalyzed GaAsSb nanowires on graphitic substrates can be promoted by creating step edges of monolayer thickness on kish graphite before the growth. By further alternating the deposition sequence of the group-III element Al and the group-V elements As and Sb, it was found that triangular crystallites form when Al is deposited first. This indicates that the surface binding energy between the graphitic surface and the III-V nucleus profoundly influences the epitaxial growth of III-V materials on graphitic surfaces. Using the optimized growth recipe with an AlAsSb buffer nuclei, vertical [111]-oriented GaAsSb/GaAs nanowires with GaAsSb-based multiple axial superlattices were grown on exfoliated graphite, which was attached to a (001) AlAs/GaAs distributed Bragg reflector (DBR) using the simple Scotch tape method. Fabry-Pérot resonance modes were observed under optical excitation at room temperature, indicating a successful monolithic integration with optical feedback from the DBR system. These results demonstrate the great potential for flexible integration of high-efficiency III-V nanowire photonic devices on arbitrary photonic platforms using a 2D material buffer layer, e.g., graphene, without breaking the orientation registry. △ Less

Submitted 9 February, 2024; originally announced February 2024.

The unconventional two-parameter quantum valley pumping in graphene with a topological line defect

Authors: C D Ren, L Cui, W T Lu, H Y Tian, S K Wang

Abstract: Based on the Keldysh Green's function method, we report an unconventional two-parameter quantum pumping in graphene with a line defect. It is found that different from the conventional sinusoidal relation, the pumped current in this device is cosinusoid dependence on the phase difference between the two pumping potentials, which adopts its positive/nagative maximum value at while tends to zero at… ▽ More Based on the Keldysh Green's function method, we report an unconventional two-parameter quantum pumping in graphene with a line defect. It is found that different from the conventional sinusoidal relation, the pumped current in this device is cosinusoid dependence on the phase difference between the two pumping potentials, which adopts its positive/nagative maximum value at while tends to zero at . This phenomenon is related to the peculiar valley tunneling characteristics across the line defects and the exchange of valley indices on both sides of the line defect. Moreover, the pumped currents from the two valleys will flow in opposite directions along the line defect, indicating that the controllable valley current can be pumped out in the line defect without the application of strain field in graphene. △ Less

Submitted 23 November, 2021; originally announced November 2021.

Comments: 10 pages, 3 figures

Dynamic clay microstructures emerge via ion complexation waves

Authors: Michael L. Whittaker, David Ren, Colin Ophus, Yugang Zhang, Benjamin Gilbert, Laura Waller, Jillian F. Banfield

Abstract: Clays control carbon, water and nutrient transport in the lithosphere, promote cloud formation5 and lubricate fault slip through interactions among hydrated mineral interfaces. Clay mineral properties are difficult to model because their structures are disordered, curved and dynamic. Consequently, interactions at the clay mineral-aqueous interface have been approximated using electric double layer… ▽ More Clays control carbon, water and nutrient transport in the lithosphere, promote cloud formation5 and lubricate fault slip through interactions among hydrated mineral interfaces. Clay mineral properties are difficult to model because their structures are disordered, curved and dynamic. Consequently, interactions at the clay mineral-aqueous interface have been approximated using electric double layer models based on single crystals of mica and atomistic simulations. We discover that waves of complexation dipoles at dynamically curving interfaces create an emergent long-range force that drives exfoliation and restacking over time- and length-scales that are not captured in existing models. Curvature delocalizes electrostatic interactions in ways that fundamentally differ from planar surfaces, altering the ratio of ions bound to the convex and concave sides of a layer. Multiple-scattering reconstruction of low-dose energy-filtered cryo electron tomography enabled direct imaging of ion complexes and electrolyte distributions at hydrated and curved mineral interfaces with ångstrom resolution over micron length scales. Layers exfoliate and restack abruptly and repeatedly over timescales that depend strongly on the counterion identity, demonstrating that the strong coupling between elastic, electrostatic and hydration forces in clays promote collective reorganization previously thought to be a feature only of active matter. △ Less

Submitted 16 December, 2020; originally announced December 2020.

Machine learning and high-throughput robust design of P3HT-CNT composite thin films for high electrical conductivity

Authors: Daniil Bash, Yongqiang Cai, Vijila Chellappan, Swee Liang Wong, Yang Xu, Pawan Kumar, Jin Da Tan, Anas Abutaha, Jayce Cheng, Yee Fun Lim, Siyu Tian, Danny Zekun Ren, Flore Mekki-Barrada, Wai Kuan Wong, Jatin Kumar, Saif Khan, Qianxiao Li, Tonio Buonassisi, Kedar Hippalgaonkar

Abstract: Combining high-throughput experiments with machine learning allows quick optimization of parameter spaces towards achieving target properties. In this study, we demonstrate that machine learning, combined with multi-labeled datasets, can additionally be used for scientific understanding and hypothesis testing. We introduce an automated flow system with high-throughput drop-casting for thin film pr… ▽ More Combining high-throughput experiments with machine learning allows quick optimization of parameter spaces towards achieving target properties. In this study, we demonstrate that machine learning, combined with multi-labeled datasets, can additionally be used for scientific understanding and hypothesis testing. We introduce an automated flow system with high-throughput drop-casting for thin film preparation, followed by fast characterization of optical and electrical properties, with the capability to complete one cycle of learning of fully labeled ~160 samples in a single day. We combine regio-regular poly-3-hexylthiophene with various carbon nanotubes to achieve electrical conductivities as high as 1200 S/cm. Interestingly, a non-intuitive local optimum emerges when 10% of double-walled carbon nanotubes are added with long single wall carbon nanotubes, where the conductivity is seen to be as high as 700 S/cm, which we subsequently explain with high fidelity optical characterization. Employing dataset resampling strategies and graph-based regressions allows us to account for experimental cost and uncertainty estimation of correlated multi-outputs, and supports the proving of the hypothesis linking charge delocalization to electrical conductivity. We therefore present a robust machine-learning driven high-throughput experimental scheme that can be applied to optimize and understand properties of composites, or hybrid organic-inorganic materials. △ Less

Submitted 20 November, 2020; originally announced November 2020.

Comments: 10 pages, 5 figures, includes Supplementary Information

Mapping Charge Recombination and the Effect of Point Defect Insertion in Gallium Arsenide Nanowire Heterojunctions

Authors: Brian Zutter, Hyunseok Kim, William Hubbard, Dingkun Ren, Matthew Mecklenburg, Diana Huffaker, B. C. Regan

Abstract: Electronic devices are extremely sensitive to defects in their constituent semiconductors, but locating electronic point defects in bulk semiconductors has previously been impossible. Here we apply scanning transmission electron microscopy (STEM) electron beam-induced current (EBIC) imaging to map electronic defects in a GaAs nanowire Schottky diode. Imaging with a non-damaging 80 or 200 kV STEM a… ▽ More Electronic devices are extremely sensitive to defects in their constituent semiconductors, but locating electronic point defects in bulk semiconductors has previously been impossible. Here we apply scanning transmission electron microscopy (STEM) electron beam-induced current (EBIC) imaging to map electronic defects in a GaAs nanowire Schottky diode. Imaging with a non-damaging 80 or 200 kV STEM acceleration potential reveals a minority-carrier diffusion length that decreases near the surface of the hexagonal nanowire, thereby demonstrating that the device's charge collection efficiency (CCE) is limited by surface defects. Imaging with a 300 keV STEM beam introduces vacancy-interstitial (VI, or Frenkel) defects in the GaAs that increase carrier recombination and reduce the CCE of the diode. We create, locate, and characterize a single insertion event, determining that a defect inserted 7 nm from the Schottky interface broadly reduces the CCE by 10% across the entire nanowire device. Variable-energy STEM EBIC imaging thus allows both benign mapping and pinpoint modification of a device's e-h recombination landscape, enabling controlled experiments that illuminate the impact of both extended (1D and 2D) and point (0D) defects on semiconductor device performance. △ Less

Submitted 10 October, 2020; originally announced October 2020.

Comments: 10 pages, 7 figures

Comprehensive Three-dimensional Computational Model Enables Design of Nanostructured Infrared Detectors

Authors: Dingkun Ren

Abstract: Due to the unique three-dimensional (3-D) geometries of nanowire-i.e., large surface-to-volume ratios and smaller cross-sections at the nanowire-substrate interfaces-their carrier dynamics are much more complicated than those of thin films. Therefore, analytical solutions cannot be found for these nanostructures and a more comprehensive scheme of 3-D modeling is necessary to interpret their intrin… ▽ More Due to the unique three-dimensional (3-D) geometries of nanowire-i.e., large surface-to-volume ratios and smaller cross-sections at the nanowire-substrate interfaces-their carrier dynamics are much more complicated than those of thin films. Therefore, analytical solutions cannot be found for these nanostructures and a more comprehensive scheme of 3-D modeling is necessary to interpret their intrinsic carrier dynamics. To date, most modeling studies for nanowires have focused on electromagnetic properties (e.g. optical modes and optical absorption). However, very few studies have combined optical and electrical simulations together to probe the temporal and spatial carrier motions within nanowires. In this work, we present a comprehensive nanowire optoelectronic transient model and photoresponse model, allowing us to investigate carrier lifetimes and their fundamental correlations with material properties, as well as responsivities and detectivities for nanowire-based optical devices for photodetection (i.e., photodetectors). We believe this work can stimulate further experimental and theoretical work and unveil the real strength of 3-D computational models for exploring carrier dynamics in nanowires and nanostructured materials. △ Less

Submitted 25 July, 2019; originally announced July 2019.

Comments: 7 pages, 4 figures

Accelerating Photovoltaic Materials Development via High-Throughput Experiments and Machine-Learning-Assisted Diagnosis

Authors: Shijing Sun, Noor T. P. Hartono, Zekun D. Ren, Felipe Oviedo, Antonio M. Buscemi, Mariya Layurova, De Xin Chen, Tofunmi Ogunfunmi, Janak Thapa, Savitha Ramasamy, Charles Settens, Brian L. DeCost, Aaron Gilad Kusne, Zhe Liu, Siyu I. P. Tian, I. Marius Peters, Juan-Pablo Correa-Baena, Tonio Buonassisi

Abstract: Accelerating the experimental cycle for new materials development is vital for addressing the grand energy challenges of the 21st century. We fabricate and characterize 75 unique halide perovskite-inspired solution-based thin-film materials within a two-month period, with 87% exhibiting band gaps between 1.2 eV and 2.4 eV that are of interest for energy-harvesting applications. This increased thro… ▽ More Accelerating the experimental cycle for new materials development is vital for addressing the grand energy challenges of the 21st century. We fabricate and characterize 75 unique halide perovskite-inspired solution-based thin-film materials within a two-month period, with 87% exhibiting band gaps between 1.2 eV and 2.4 eV that are of interest for energy-harvesting applications. This increased throughput is enabled by streamlining experimental workflows, developing a set of precursors amenable to high-throughput synthesis, and developing machine-learning assisted diagnosis. We utilize a deep neural network to classify compounds based on experimental X-ray diffraction data into 0D, 2D, and 3D structures more than 10 times faster than human analysis and with 90% accuracy. We validate our methods using lead-halide perovskites and extend the application to novel lead-free compositions. The wider synthesis window and faster cycle of learning enables three noteworthy scientific findings: (1) we realize four inorganic layered perovskites, A3B2Br9 (A = Cs, Rb; B = Bi, Sb) in thin-film form via one-step liquid deposition; (2) we report a multi-site lead-free alloy series that was not previously described in literature, Cs3(Bi1-xSbx)2(I1-xBrx)9; and (3) we reveal the effect on bandgap (reduction to <2 eV) and structure upon simultaneous alloying on the B-site and X-site of Cs3Bi2I9 with Sb and Br. This study demonstrates that combining an accelerated experimental cycle of learning and machine-learning based diagnosis represents an important step toward realizing fully-automated laboratories for materials discovery and development. △ Less

Submitted 25 November, 2018; originally announced December 2018.

Comments: NIPS 2018 Workshop: Machine Learning for Molecules and Materials

Journal ref: Joule 3, 2019, 1437-1451

Integer quantum Hall effect and topological phase transitions in silicene

Authors: Y. L. Liu, G. X. Luo, N. Xu, H. Y. Tian, C. D. Ren

Abstract: We numerically investigate the effects of disorder on the quantum Hall effect (QHE) and the quantum phase transitions in silicene based on a lattice model. It is shown that for a clean sample, silicene exhibits an unconventional QHE near the band center, with plateaus developing at $ν=0,\pm2,\pm6,\ldots,$ and a conventional QHE near the band edges. In the presence of disorder, the Hall plateaus ca… ▽ More We numerically investigate the effects of disorder on the quantum Hall effect (QHE) and the quantum phase transitions in silicene based on a lattice model. It is shown that for a clean sample, silicene exhibits an unconventional QHE near the band center, with plateaus developing at $ν=0,\pm2,\pm6,\ldots,$ and a conventional QHE near the band edges. In the presence of disorder, the Hall plateaus can be destroyed through the float-up of extended levels toward the band center, in which higher plateaus disappear first. However, the center $ν=0$ Hall plateau is more sensitive to disorder and disappears at a relatively weak disorder strength. Moreover, the combination of an electric field and the intrinsic spin-orbit interaction (SOI) can lead to quantum phase transitions from a topological insulator to a band insulator at the charge neutrality point (CNP), accompanied by additional quantum Hall conductivity plateaus. △ Less

Submitted 14 December, 2017; originally announced December 2017.

Comments: 7 pages, 4 figures

Journal ref: Condens. Matter Phys., 2017, vol. 20, No. 4, 43701

Single-mode Near-infrared Lasing in a GaAsSb/GaAs Nanowire Superlattice at Room Temperature

Authors: Dingding Ren, Lyubomir Ahtapodov, Julie S. Nilsen, Jianfeng Yang, Anders Gustafsson, Junghwan Huh, Gavin J. Conibeer, Antonius T. J. van Helvoort, Bjørn-Ove Fimland, Helge Weman

Abstract: Semiconductor nanowire lasers can produce guided coherent light emission with miniaturized geometry, bringing about new possibility for a variety of applications including nanophotonic circuits, optical sensing, and on-chip and chip-to-chip optical communications. Here, we report on the realization of single-mode room-temperature lasing from 890 nm to 990 nm utilizing a novel design of single nano… ▽ More Semiconductor nanowire lasers can produce guided coherent light emission with miniaturized geometry, bringing about new possibility for a variety of applications including nanophotonic circuits, optical sensing, and on-chip and chip-to-chip optical communications. Here, we report on the realization of single-mode room-temperature lasing from 890 nm to 990 nm utilizing a novel design of single nanowires with GaAsSb-based multiple superlattices as gain medium under optical pumping. The wavelength tunability with comprehensively enhanced lasing performance is shown to result from the unique nanowire structure with efficient gain materials, which delivers a lasing quality factor as high as 1250, a reduced lasing threshold ~ 6 kW cm-2 and a high characteristic temperature ~ 129 K. These results present a major advancement for the design and synthesis of nanowire laser structures, which can pave the way towards future nanoscale integrated optoelectronic systems with stunning performance. △ Less

Submitted 23 August, 2017; originally announced August 2017.