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Material transfer and contact optimization in MoS2 nanotube devices
Authors:
R. T. K. Schock,
S. Obloh,
J. Neuwald,
M. Kronseder,
W. Möckel,
M. Malok,
L. Pirker,
M. Remškar,
A. K. Hüttel
Abstract:
While the promise of clean and defect-free $\textrm{MoS}_{2}$ nanotubes as quantum electronic devices is obvious, ranging from strong spin-orbit interaction to intrinsic superconductivity, device fabrication still poses considerable challenges. Deterministic transfer of transition metal dichalcogenide nanomaterials and transparent contacts to the nanomaterials are nowadays highly active topics of…
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While the promise of clean and defect-free $\textrm{MoS}_{2}$ nanotubes as quantum electronic devices is obvious, ranging from strong spin-orbit interaction to intrinsic superconductivity, device fabrication still poses considerable challenges. Deterministic transfer of transition metal dichalcogenide nanomaterials and transparent contacts to the nanomaterials are nowadays highly active topics of research, both with fundamental research and applications in mind. Contamination from transport agents as well as surface adsorbates and surface charges play a critical role for device performance. Many techniques have been proposed to address these topics for transition metal dichalcogenides in general. Here, we analyse their usage for the transfer based fabrication of $\textrm{MoS}_{2}$ nanotube devices. Further, we compare different contact materials in order to avoid the formation of a Schottky barrier.
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Submitted 1 October, 2024; v1 submitted 19 July, 2024;
originally announced July 2024.
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Modulations of the Work Function and Morphology of a Single MoS2 Nanotube by Charge Injection
Authors:
M. Remškar,
J. Jelenc,
N. Czepurny,
M. Malok,
L. Pirker,
R. Schreiner,
A. K. Hüttel
Abstract:
A current was injected into a single MoS2 nanotube using an atomic-force-microscopy probe. The trapped electrons and holes caused a partial collapse of the nanotube and its helical twisting. The topography changes can be explained by the reverse piezoelectric effect, the theory of which was proposed for chiral nanostructures. Work-function modifications were observed, which were dependent on the p…
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A current was injected into a single MoS2 nanotube using an atomic-force-microscopy probe. The trapped electrons and holes caused a partial collapse of the nanotube and its helical twisting. The topography changes can be explained by the reverse piezoelectric effect, the theory of which was proposed for chiral nanostructures. Work-function modifications were observed, which were dependent on the polarity of the injected carriers.
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Submitted 10 January, 2024;
originally announced January 2024.
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Direct observation of split-mode exciton-polaritons in a single MoS$_2$ nanotube
Authors:
A. I. Galimov,
D. R. Kazanov,
A. V. Poshakinskiy,
M. V. Rakhlin,
I. A. Eliseyev,
A. A. Toropov,
M. Remskar,
T. V. Shubina
Abstract:
A single nanotube synthesized from a transition metal dichalcogenide (TMDC) exhibits strong exciton resonances and, in addition, can support optical whispering gallery modes. This combination is promising for observing exciton-polaritons without an external cavity. However, traditional energy-momentum-resolved detection methods are unsuitable for this tiny object. Instead, we propose to use split…
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A single nanotube synthesized from a transition metal dichalcogenide (TMDC) exhibits strong exciton resonances and, in addition, can support optical whispering gallery modes. This combination is promising for observing exciton-polaritons without an external cavity. However, traditional energy-momentum-resolved detection methods are unsuitable for this tiny object. Instead, we propose to use split optical modes in a twisted nanotube with the flattened cross-section, where a gradually decreasing gap between the opposite walls leads to a change in mode energy, similar to the effect of the barrier width on the eigenenergies in the double-well potential. Using micro-reflectance spectroscopy, we investigated the rich pattern of polariton branches in single MoS$_2$ tubes with both variable and constant gaps. Observed Rabi splitting in the 40 - 60 meV range is comparable to that for a MoS$_2$ monolayer in a microcavity. Our results, based on the polariton dispersion measurements and polariton dynamics analysis, present a single TMDC nanotube as a perfect polaritonic structure for nanophotonics.
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Submitted 15 January, 2024; v1 submitted 30 December, 2023;
originally announced January 2024.
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Twisted Nanotubes of Transition Metal Dichalcogenides with Split Optical Modes for Tunable Radiated Light Resonators
Authors:
Ilya A. Eliseyev,
Bogdan R. Borodin,
Dmitrii R. Kazanov,
Alexander V. Poshakinskiy,
Maja Remškar,
Sergey I. Pavlov,
Lyubov V. Kotova,
Prokhor A. Alekseev,
Alexey V. Platonov,
Valery Yu. Davydov,
Tatiana V. Shubina
Abstract:
Synthesized micro- and nanotubes composed of transition metal dichalcogenides (TMDCs) such as MoS$_2$ are promising for many applications in nanophotonics, because they combine the abilities to emit strong exciton luminescence and to act as whispering gallery microcavities even at room temperature. In addition to tubes in the form of hollow cylinders, there is an insufficiently-studied class of tw…
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Synthesized micro- and nanotubes composed of transition metal dichalcogenides (TMDCs) such as MoS$_2$ are promising for many applications in nanophotonics, because they combine the abilities to emit strong exciton luminescence and to act as whispering gallery microcavities even at room temperature. In addition to tubes in the form of hollow cylinders, there is an insufficiently-studied class of twisted tubes, the flattened cross section of which rotates along the tube axis. As shown by theoretical analysis, in such nanotubes the interaction of electromagnetic waves excited at opposite sides of the cross section can cause splitting of the whispering gallery modes. By studying micro-photoluminescence spectra measured along individual MoS$_2$ tubes, it has been established that the splitting value, which controls the energies of the split modes, depends exponentially on the aspect ratio of the cross section, which varies in "breathing" tubes, while the relative intensity of the modes in a pair is determined by the angle of rotation of the cross section. These results open up the possibility of creating multifunctional tubular TMDC nanodevices that provide resonant amplification of self-emitting light at adjustable frequencies.
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Submitted 9 December, 2022;
originally announced December 2022.
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Non-Destructive Low-Temperature Contacts to MoS2 Nanoribbon and Nanotube Quantum Dots
Authors:
R. T. K. Schock,
J. Neuwald,
W. Möckel,
M. Kronseder,
L. Pirker,
M. Remškar,
A. K. Hüttel
Abstract:
Molybdenum disulfide nanoribbons and nanotubes are quasi-1D semiconductors with strong spin-orbit interaction, a nanomaterial highly promising for quantum electronic applications. Here, it is demonstrated that a bismuth semimetal layer between the contact metal and this nanomaterial strongly improves the properties of the contacts. Two-point resistances on the order of 100k$Ω$ are observed at room…
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Molybdenum disulfide nanoribbons and nanotubes are quasi-1D semiconductors with strong spin-orbit interaction, a nanomaterial highly promising for quantum electronic applications. Here, it is demonstrated that a bismuth semimetal layer between the contact metal and this nanomaterial strongly improves the properties of the contacts. Two-point resistances on the order of 100k$Ω$ are observed at room temperature. At cryogenic temperature, Coulomb blockade is visible. The resulting stability diagrams indicate a marked absence of trap states at the contacts and the corresponding disorder, compared to previous devices that use low-work-function metals as contacts. Single-level quantum transport is observed at temperatures below 100mK.
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Submitted 10 March, 2023; v1 submitted 30 September, 2022;
originally announced September 2022.
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Enhanced Carrier Transport by Transition Metal Doping in WS2 Field Effect Transistors
Authors:
Maomao Liu,
Sichen Wei,
Simran Shahi,
Hemendra Nath Jaiswal,
Paolo Paletti,
Sara Fathipour,
Maja Remskar,
Jun Jiao,
Wansik Hwang,
Fei Yao,
Huamin Li
Abstract:
High contact resistance is one of the primary concerns for electronic device applications of two-dimensional (2D) layered semiconductors. Here, we explore the enhanced carrier transport through metal-semiconductor interfaces in WS2 field effect transistors (FETs) by introducing a typical transition metal, Cu, with two different doping strategies: (i) a "generalized" Cu doping by using randomly dis…
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High contact resistance is one of the primary concerns for electronic device applications of two-dimensional (2D) layered semiconductors. Here, we explore the enhanced carrier transport through metal-semiconductor interfaces in WS2 field effect transistors (FETs) by introducing a typical transition metal, Cu, with two different doping strategies: (i) a "generalized" Cu doping by using randomly distributed Cu atoms along the channel and (ii) a "localized" Cu doping by adapting an ultrathin Cu layer at the metal-semiconductor interface. Compared to the pristine WS2 FETs, both the generalized Cu atomic dopant and localized Cu contact decoration can provide a Schottky-to-Ohmic contact transition owing to the reduced contact resistances by 1 - 3 orders of magnitude, and consequently elevate electron mobilities by 5 - 7 times higher. Our work demonstrates that the introduction of transition metal can be an efficient and reliable technique to enhance the carrier transport and device performance in 2D TMD FETs.
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Submitted 14 January, 2020;
originally announced January 2020.
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Coulomb Blockade Spectroscopy of a $\mathrm{MoS}_2$ Nanotube
Authors:
Simon Reinhardt,
Luka Pirker,
Christian Bäuml,
Maja Remškar,
Andreas K. Hüttel
Abstract:
Low-temperature transport spectroscopy measurements on a quantum dot lithographically defined in a multiwall $\mathrm{MoS}_2$ nanotube are demonstrated. At $T=300\,\mathrm{mK}$, clear Coulomb blockade is observed, with charging energies in the range of 1 meV. In single-electron tunneling, discrete conductance resonances are visible at finite bias. Additionally, a magnetic field perpendicular to th…
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Low-temperature transport spectroscopy measurements on a quantum dot lithographically defined in a multiwall $\mathrm{MoS}_2$ nanotube are demonstrated. At $T=300\,\mathrm{mK}$, clear Coulomb blockade is observed, with charging energies in the range of 1 meV. In single-electron tunneling, discrete conductance resonances are visible at finite bias. Additionally, a magnetic field perpendicular to the nanotube axis reveals clear indications of quantum state transitions, with effective $g$ factors consistent with published theoretical predictions.
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Submitted 8 November, 2019; v1 submitted 11 April, 2019;
originally announced April 2019.
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Excitonic emission in van-der-Waals nanotubes of transition metal dichalcogenides
Authors:
T. V. Shubina,
M. Remškar,
V. Yu. Davydov,
K. G. Belyaev,
A. A. Toropov,
B. Gil
Abstract:
Nanotubes (NTs) of transition metal dichalcogenides (TMDs), such as MoS2 and WS2, were first synthesized more than a quarter of a century ago; nevertheless, many of their properties have so far remained basically unknown. This review presents the state of the art in the knowledge of the optical properties of TMD NTs. We first evaluate general properties of multilayered TMD crystals, and analyze av…
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Nanotubes (NTs) of transition metal dichalcogenides (TMDs), such as MoS2 and WS2, were first synthesized more than a quarter of a century ago; nevertheless, many of their properties have so far remained basically unknown. This review presents the state of the art in the knowledge of the optical properties of TMD NTs. We first evaluate general properties of multilayered TMD crystals, and analyze available data on electronic band structure and optical properties of related NTs. Then, the technology for the formation and the structural characteristics of TMD NTs are represented, focusing on the structures synthesized by chemical transport reaction. The core of this work is the presentation of the ability of TMD NTs to emit bright photoluminescence (PL), which has been discovered recently. By means of micro-PL spectroscopy of individual tubes we show that excitonic transitions relevant to both direct and indirect band gaps contribute to the emission spectra of the NTs despite the presence of dozens of monolayers in their walls. We highlight the performance of the tubes as efficient optical resonators, whose confined optical modes strongly affect the emission bands. Finally, a brief conclusion is presented, along with an outlook of the future studies of this novel member of the family of radiative NTs, which have unique potential for different nanophotonics applications.
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Submitted 6 December, 2018; v1 submitted 3 November, 2018;
originally announced November 2018.
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Multiwall nanotubes of molybdenum disulfide as optical resonators
Authors:
D. R. Kazanov,
A. V. Poshakinskiy,
V. Yu. Davydov,
A. N. Smirnov,
D. A. Kirilenko,
M. Remškar,
S. Fathipour,
A. Mintairov,
A. Seabaugh,
B. Gil,
T. V. Shubina
Abstract:
We study the optical properties of MoS$_2$ nanotubes (NTs) with walls comprising dozens of monolayers. We reveal strong peaks in micro-photoluminescence ($μ$-PL) spectra when detecting the light polarized along the NT axis. We develop a model describing the optical properties of the nanotubes acting as optical resonators which support the quantization of whispering gallery modes inside the NT wall…
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We study the optical properties of MoS$_2$ nanotubes (NTs) with walls comprising dozens of monolayers. We reveal strong peaks in micro-photoluminescence ($μ$-PL) spectra when detecting the light polarized along the NT axis. We develop a model describing the optical properties of the nanotubes acting as optical resonators which support the quantization of whispering gallery modes inside the NT wall. The experimental observation of the resonances in $μ$-PL allows one to use them as a contactless method of the estimation of the wall width. Our findings open a way to use such NTs as polarization-sensitive components of nanophotonic devices.
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Submitted 4 July, 2018;
originally announced July 2018.
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Synthesized multiwall MoS2 nanotube and nanoribbon field-effect transistors
Authors:
Sara Fathipour,
Maja Remskar,
Ana Varlec,
Arvind Ajoy,
Rusen Yan,
Suresh Vishwanath,
Wan Sik Hwang,
Huili,
Xing,
Debdeep Jena,
Alan Seabaugh
Abstract:
We report on the fabrication and characterization of synthesized multiwall MoS2 nanotube (NT) and nanoribbon (NR) field-effect transistors (FETs). The MoS2 NTs and NRs were grown by chemical transport, using iodine as a transport agent. Raman spectroscopy confirms the material as unambiguously MoS2 in NT, NR, and flake forms. Transmission electron microscopy was used to observe cross sections of t…
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We report on the fabrication and characterization of synthesized multiwall MoS2 nanotube (NT) and nanoribbon (NR) field-effect transistors (FETs). The MoS2 NTs and NRs were grown by chemical transport, using iodine as a transport agent. Raman spectroscopy confirms the material as unambiguously MoS2 in NT, NR, and flake forms. Transmission electron microscopy was used to observe cross sections of the devices after electrical measurements and these were used in the interpretation of the electrical measurements allowing estimation of the current density. The NT and NR FETs demonstrate n-type behavior, with ON/OFF current ratios exceeding 10^3, and with current densities of 1.02 μA/μm, and 0.79 μA/μm at VDS = 0.3 V and VBG = 1 V, respectively. Photocurrent measurements conducted on a MoS2 NT FET, revealed short-circuit photocurrent of tens of nanoamps under an excitation optical power of 78 μW and 488 nm wavelength, which corresponds to a responsivity of 460 μA/W. A long channel transistor model was used to model the common-source characteristics of MoS2 NT and NR FETs and was shown to be consistent with the measured data.
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Submitted 21 November, 2014;
originally announced November 2014.
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Comparative Study of Chemically Synthesized and Exfoliated Multilayer MoS2 Field-Effect Transistors
Authors:
Wan Sik Hwang,
Maja Remskar,
Rusen Yan,
Tom Kosel,
Jong Kyung Park,
Byung Jin Cho,
Wilfried Haensch,
Huili,
Xing,
Alan Seabaugh,
Debdeep Jena
Abstract:
We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer 2D crystal semiconductor MoS2. Electrical properties such as the FET mobility, subthreshold swing, on/off ratio, and contact resistance of chemically synthesized (s-) MoS2 are indistinguishable from that of mechanically exfoliated (x-) MoS2, however flat-band voltages are different, possibly du…
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We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer 2D crystal semiconductor MoS2. Electrical properties such as the FET mobility, subthreshold swing, on/off ratio, and contact resistance of chemically synthesized (s-) MoS2 are indistinguishable from that of mechanically exfoliated (x-) MoS2, however flat-band voltages are different, possibly due to polar chemical residues originating in the transfer process. Electron diffraction studies and Raman spectroscopy show the structural similarity of s-MoS2 to x-MoS2. This initial report on the behavior and properties of s-MoS2 illustrates the feasibility of electronic devices using synthetic layered 2D crystal semiconductors.
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Submitted 18 January, 2013;
originally announced January 2013.
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Transistors with Chemically Synthesized Layered Semiconductor WS2 Exhibiting 105 Room Temperature Modulation and Ambipolar Behavior
Authors:
Wan Sik Hwang,
Maja Remskar,
Rusen Yan,
Vladimir Protasenko,
Kristof Tahy,
Soo Doo Chae,
Pei Zhao,
Aniruddha Konar,
Huili,
Xing,
Alan Seabaugh,
Debdeep Jena
Abstract:
We report the realization of field-effect transistors (FETs) made with chemically- synthesized layered two dimensional (2D) crystal semiconductor WS2. The 2D Schottky-barrier FETs demonstrate ambipolar behavior and a high (~105x) on/off current ratio at room temperature with current saturation. The behavior is attributed to the presence of an energy bandgap in the 2D crystal material. The FETs sho…
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We report the realization of field-effect transistors (FETs) made with chemically- synthesized layered two dimensional (2D) crystal semiconductor WS2. The 2D Schottky-barrier FETs demonstrate ambipolar behavior and a high (~105x) on/off current ratio at room temperature with current saturation. The behavior is attributed to the presence of an energy bandgap in the 2D crystal material. The FETs show clear photo response to visible light. The promising electronic and optical characteristics of the devices combined with the layered 2D crystal flexibility make WS2 attractive for future electronic and optical devices.
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Submitted 2 April, 2012;
originally announced April 2012.
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Quantum charge transport in Mo$_{6}$S$_{3}$I$_{6}$ molecular wire circuits
Authors:
M. Uplaznik,
B. Bercic,
M. Remskar,
D. Mihailovic
Abstract:
Charge transport measurements on flexible Mo$_{6}$S$_{3}$I$_{6}$ (MoSI) nanowires with different diameters in highly imperfect 2-terminal circuits reveal systematic power law behaviour of the conductivity $σ(T,V)$ as a function of temperature and voltage. On the basis of measurements on a number of circuits we conclude that the behaviour in \emph{thin} wires can be most convincingly described by…
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Charge transport measurements on flexible Mo$_{6}$S$_{3}$I$_{6}$ (MoSI) nanowires with different diameters in highly imperfect 2-terminal circuits reveal systematic power law behaviour of the conductivity $σ(T,V)$ as a function of temperature and voltage. On the basis of measurements on a number of circuits we conclude that the behaviour in \emph{thin} wires can be most convincingly described by tunneling through Tomonaga-Luttinger liquid (TLL) segments of MoSI wire, which is in some cases modified by environmental Coulomb blockade (ECB). The latter are proposed to arise from deformations or imperfections of the MoSI wires, which - in combination with their recognitive terminal sulfur-based connectivity properties - might be useful for creating sub-nanometer scale interconnects as well as non-linear elements for molecular electronics.
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Submitted 6 May, 2009;
originally announced May 2009.
