Showing 1–50 of 85 results for author: Reitzenstein, S

Resonant and Anti-resonant Exciton-Phonon Coupling in Quantum Dot Molecules

Authors: Michelle Lienhart, Krzysztof Gawarecki, Markus Stöcker, Frederik Bopp, Charlotte Cullip, Nadeem Akhlaq, Christopher Thalacker, Johannes Schall, Sven Rodt, Arne Ludwig, Dirk Reuter, Stephan Reitzenstein, Kai Müller, Paweł Machnikowski, Jonathan J. Finley

Abstract: Optically active quantum dot molecules (QDMs) can host multi-spin quantum states with the potential for the deterministic generation of photonic graph states with tailored entanglement structures. Their usefulness for the generation of such non-classical states of light is determined by orbital and spin decoherence mechanisms, particularly phonon-mediated processes dominant at energy scales up to… ▽ More Optically active quantum dot molecules (QDMs) can host multi-spin quantum states with the potential for the deterministic generation of photonic graph states with tailored entanglement structures. Their usefulness for the generation of such non-classical states of light is determined by orbital and spin decoherence mechanisms, particularly phonon-mediated processes dominant at energy scales up to a few millielectronvolts. Here, we directly measure the spectral function of orbital phonon relaxation in a QDM and benchmark our findings against microscopic kp theory. Our results reveal phonon-mediated relaxation rates exhibiting pronounced resonances and anti-resonances, with rates ranging from several ten ns$^{-1}$ to tens of $μ$s$^{-1}$. Comparison with a kinetic model reveals the voltage (energy) dependent phonon coupling strength and fully explains the interplay between phonon-assisted relaxation and radiative recombination. These anti-resonances can be leveraged to increase the lifetime of energetically unfavorable charge configurations needed for realizing efficient spin-photon interfaces and multi-dimensional cluster states. △ Less

Submitted 14 May, 2025; originally announced May 2025.

On-demand storage and retrieval of single photons from a semiconductor quantum dot in a room-temperature atomic vapor memory

Authors: Benjamin Maaß, Avijit Barua, Norman Vincenz Ewald, Elizabeth Robertson, Kartik Gaur, Suk In Park, Sven Rodt, Jin-Dong Song, Stephan Reitzenstein, Janik Wolters

Abstract: Interfacing light from solid-state single-photon sources with scalable and robust room-temperature quantum memories has been a long-standing challenge in photonic quantum information technologies due to inherent noise processes and time-scale mismatches between the operating conditions of solid-state and atomic systems. Here, we demonstrate on-demand storage and retrieval of single photons from a… ▽ More Interfacing light from solid-state single-photon sources with scalable and robust room-temperature quantum memories has been a long-standing challenge in photonic quantum information technologies due to inherent noise processes and time-scale mismatches between the operating conditions of solid-state and atomic systems. Here, we demonstrate on-demand storage and retrieval of single photons from a semiconductor quantum dot device in a room-temperature atomic vapor memory. A deterministically fabricated InGaAs quantum dot light source emits single photons at the wavelength of the cesium D1 line at 895\,nm which exhibit an inhomogeneously broadened linewidth of 5.1(7)\,GHz and are subsequently stored in a low-noise ladder-type cesium vapor memory. We show control over the interaction between the single photons and the atomic vapor, allowing for variable retrieval times of up to 19.8(3)\,ns at an internal efficiency of $η_\mathrm{int}=0.6(1)\%$. Our results significantly expand the application space of both room-temperature vapor memories and semiconductor quantum dots in future quantum network architectures. △ Less

Submitted 26 January, 2025; originally announced January 2025.

Probing Noncentrosymmetric 2D Materials by Fourier Space Second Harmonic Imaging

Authors: Lucas Lafeta, Sean Hartmann, Bárbara Rosa, Stephan Reitzenstein, Leandro M. Malard, Achim Hartschuh

Abstract: The controlled assembly of twisted 2D structures requires precise determination of the crystal orientation of their component layers. In the established procedure, the second-harmonic generation (SHG) intensity of a noncentrosymmetric layer is recorded while rotating the polarization of both the incident laser field and detected SHG, which can be time-consuming and tedious. Here, we demonstrate th… ▽ More The controlled assembly of twisted 2D structures requires precise determination of the crystal orientation of their component layers. In the established procedure, the second-harmonic generation (SHG) intensity of a noncentrosymmetric layer is recorded while rotating the polarization of both the incident laser field and detected SHG, which can be time-consuming and tedious. Here, we demonstrate that the crystal orientation of transition metal dichalcogenides and hexagonal boron nitride can be directly determined by recording SHG images generated by tightly focused laser beams in Fourier space. Using an azimuthally polarized laser beam, the SHG image distinctly reflects the hexagonal structure of the crystal lattice, revealing its orientation quickly and accurately. This technique could significantly impact the field of twistronics, which studies the effects of the relative angle between the layers of a stacked 2D structure, as well as advances the nanofabrication of 2D materials. △ Less

Submitted 3 September, 2024; originally announced September 2024.

Comments: 22 (35) pages, 6 (12) figures (including Supplementary Information)

Journal ref: ACS Photonics 2025 12 (1), 357-363

Electrical manipulation of intervalley trions in twisted MoSe$_2$ homobilayers at room temperature

Authors: Bárbara L. T. Rosa, Paulo E. Faria Junior, Alisson R. Cadore, Yuhui Yang, Aris Koulas-Simos, Chirag C. Palekar, Sefaattin Tongay, Jaroslav Fabian, Stephan Reitzenstein

Abstract: The impressive physics and applications of intra- and interlayer excitons in a transition metal dichalcogenide twisted-bilayer make these systems compelling platforms for exploring the manipulation of their optoelectronic properties through electrical fields. This work studies the electrical control of excitonic complexes in twisted MoSe$_2$ homobilayer devices at room temperature. Gate-dependent… ▽ More The impressive physics and applications of intra- and interlayer excitons in a transition metal dichalcogenide twisted-bilayer make these systems compelling platforms for exploring the manipulation of their optoelectronic properties through electrical fields. This work studies the electrical control of excitonic complexes in twisted MoSe$_2$ homobilayer devices at room temperature. Gate-dependent micro-photoluminescence spectroscopy reveals an energy tunability of several meVs originating from the emission of excitonic complexes. Furthermore, our study investigates the twist-angle dependence of valley properties by fabricating devices with stacking angles of $θ\sim1\degree$, $θ\sim4\degree$ and $θ\sim18\degree$. Strengthened by density functional theory calculations, the results suggest that, depending on the twist angle, the conduction band minima and hybridized states at the \textbf{Q}-point promote the formation of intervalley hybrid trions involving the \textbf{Q}-and \textbf{K}-points in the conduction band and the \textbf{K}-point in the valence band. By revealing the gate control of exciton species in twisted homobilayers, our findings open new avenues for engineering multifunctional optoelectronic devices based on ultrathin semiconducting systems. △ Less

Submitted 11 October, 2024; v1 submitted 10 July, 2024; originally announced July 2024.

Bright electrically contacted circular Bragg grating resonators with deterministically integrated quantum dots

Authors: Setthanat Wijitpatima, Normen Auler, Priyabata Mudi, Timon Funk, Avijit Barua, Binamra Shrestha, Imad Limame, Sven Rodt, Dirk Reuter, Stephan Reitzenstein

Abstract: Cavity-enhanced emission of electrically controlled semiconductor quantum dots is essential in developing bright quantum devices for real-world quantum photonic applications. Combining the circular Bragg grating (CBG) approach with a PIN-diode structure, we propose and implement an innovative concept for ridge-based electrically-contacted CBG resonators. Through fine-tuning of device parameters in… ▽ More Cavity-enhanced emission of electrically controlled semiconductor quantum dots is essential in developing bright quantum devices for real-world quantum photonic applications. Combining the circular Bragg grating (CBG) approach with a PIN-diode structure, we propose and implement an innovative concept for ridge-based electrically-contacted CBG resonators. Through fine-tuning of device parameters in numerical simulations and deterministic nanoprocessing, we produced electrically controlled single quantum dot CBG resonators with excellent electro-optical emission properties. These include multiple wavelength-tunable emission lines and a photon extraction efficiency (PEE) of up to (30.4$\pm$3.4)%, where refined numerical optimization based on experimental findings suggests a substantial improvement, promising PEE >50%. Additionally, the developed quantum light sources yield single-photon purity reaching (98.8$\pm$0.2)% [post-selected: (99.5$\pm$0.3)%] and a photon indistinguishability of (25.8$\pm$2.1)% [post-selected: (92.8$\pm$4.8)%]. Our results pave the way for high-performance quantum devices with combined cavity enhancement and deterministic charge-environment controls, advancing the development of photonic quantum information systems such as complex quantum repeater networks. △ Less

Submitted 12 June, 2024; originally announced June 2024.

Enhancement of interlayer exciton emission in a TMDC heterostructure via a multi-resonant chirped microresonator up to room temperature

Authors: Chirag C. Palekar, Barbara Rosa, Niels Heermeier, Ching-Wen Shih, Imad Limame, Aris Koulas-Simos, Arash Rahimi-Iman, Stephan Reitzenstein

Abstract: We report on multi-resonance chirped distributed Bragg reflector (DBR) microcavities. These systems are employed to investigate the light-mater interaction with both intra- and inter-layer excitons of transition metal dichalcogenide (TMDC) bilayer heterostructures. The chirped DBRs consisting of SiO2 and Si3N4 layers with gradually changing thickness exhibit a broad stopband with a width exceeding… ▽ More We report on multi-resonance chirped distributed Bragg reflector (DBR) microcavities. These systems are employed to investigate the light-mater interaction with both intra- and inter-layer excitons of transition metal dichalcogenide (TMDC) bilayer heterostructures. The chirped DBRs consisting of SiO2 and Si3N4 layers with gradually changing thickness exhibit a broad stopband with a width exceeding 600 nm. Importantly, and in contrast to conventional single-resonance microcavities, our structures provide multiple resonances across a broad spectral range, which can be matched to spectrally distinct resonances of the embedded TMDC heterostructures. We study cavity-coupled emission of both intra- and inter-layer excitons from an integrated WSe2/MoSe2 heterostructure in a chirped microcavity system. We observe an enhanced interlayer exciton emission with a Purcell factor of 6.67 +- 1.02 at 4 K. Additionally, we take advantage of cavity-enhanced emission of the interlayer exciton to investigate its temperature-dependent luminescence lifetime, which yields a value of 60 ps at room temperature. Our approach provides an intriguing platform for future studies of energetically distant and confined excitons in different semiconducting materials, which paves the way for various applications such as microlasers and single-photon sources by enabling precise control and manipulation of excitonic interactions utilizing multimode resonance light-matter interaction. △ Less

Submitted 9 March, 2024; originally announced March 2024.

Self-aligned photonic defect microcavities with site-controlled quantum dots

Authors: C. -W. Shih, I. Limame, C. C. Palekar, A. Koulas-Simos, A. Kaganskiy, P. Klenovský, S. Reitzenstein

Abstract: Despite the superiority in quantum properties, self-assembled semiconductor quantum dots face challenges in terms of scalable device integration because of their random growth positions, originating from the Stranski-Krastanov growth mode. Even with existing site-controlled growth techniques, for example, nanohole or buried stressor concepts, a further lithography and etching step with high spatia… ▽ More Despite the superiority in quantum properties, self-assembled semiconductor quantum dots face challenges in terms of scalable device integration because of their random growth positions, originating from the Stranski-Krastanov growth mode. Even with existing site-controlled growth techniques, for example, nanohole or buried stressor concepts, a further lithography and etching step with high spatial alignment requirements isnecessary to accurately integrate QDs into the nanophotonic devices. Here, we report on the fabrication and characterization of strain-induced site-controlled microcavities where site-controlled quantum dots are positioned at the antinode of the optical mode field in a self-aligned manner without the need of any further nano-processing. We show that the Q-factor, mode volume, height, and the ellipticity of site-controlled microcavities can be tailored by the size of an integrated AlAs/Al2O3 buried stressor, with an opening ranging from 1 to 4 $μ$m. Lasing signatures, including super-linear input-output response, linewidth narrowing near threshold, and gain competition above threshold, are observed for a 3.6-$μ$m self-aligned cavity with a Q-factor of 18000. Furthermore, by waiving the rather complex lateral nano-structuring usually performed during the fabrication process of micropillar lasers and vertical-cavity surface emitting lasers, quasi-planar site-controlled cavities exhibit no detrimental effects of excitation power induced heating and thermal rollover. Our straightforward deterministic nanofabrication concept of high-quality quantum dot microcavities integrates seamlessly with the industrial-matured manufacturing process and the buried-stressor techniques, paving the way for exceptional scalability and straightforward manufacturing of high-\b{eta} microlasers and bright quantum light sources. △ Less

Submitted 24 November, 2023; originally announced November 2023.

High-quality single InGaAs/GaAs quantum dot growth on a CMOS-compatible silicon substrate for quantum photonic applications

Authors: Imad Limame, Peter Ludewig, Ching-Wen Shih, Marcel Hohn, Chirag C. Palekar, Wolfgang Stolz, Stephan Reitzenstein

Abstract: We present the direct heteroepitaxial growth of high-quality InGaAs quantum dots on silicon, enabling scalable, cost-effective quantum photonics devices compatible with CMOS technology. GaAs heterostructures are grown on silicon via a GaP buffer and defect-reducing layers. These epitaxial quantum dots exhibit optical properties akin to those on traditional GaAs substrates, promising vast potential… ▽ More We present the direct heteroepitaxial growth of high-quality InGaAs quantum dots on silicon, enabling scalable, cost-effective quantum photonics devices compatible with CMOS technology. GaAs heterostructures are grown on silicon via a GaP buffer and defect-reducing layers. These epitaxial quantum dots exhibit optical properties akin to those on traditional GaAs substrates, promising vast potential for the heteroepitaxy approach. They demonstrate strong multi-photon suppression with $g^{(2)}(τ)=(3.7\pm 0.2) \times 10^{-2}$ and high photon indistinguishability $V=(66\pm 19)$% under non-resonance excitation. We achieve up to ($18\pm 1$)% photon extraction efficiency with a backside distributed Bragg mirror, marking a crucial step toward silicon-based quantum nanophotonics. △ Less

Submitted 24 November, 2023; originally announced November 2023.

Epitaxial growth and characterization of multi-layer site-controlled InGaAs quantum dots based on the buried stressor method

Authors: Imad Limame, Ching-Wen Shih, Alexej Koltchanov, Fabian Heisinger, Felix Nippert, Moritz Plattner, Johannes Schall, Markus R. Wagner, Sven Rodt, Petr Klenovsky, Stephan Reitzenstein

Abstract: We report on the epitaxial growth, theoretical modeling, and structural as well as optical investigation of multi-layer, site-controlled quantum dots fabricated using the buried stressor method. This advanced growth technique utilizes the strain from a partially oxidized AlAs layer to induce site-selective nucleation of InGaAs quantum dots. By implementing strain-induced spectral nano-engineering,… ▽ More We report on the epitaxial growth, theoretical modeling, and structural as well as optical investigation of multi-layer, site-controlled quantum dots fabricated using the buried stressor method. This advanced growth technique utilizes the strain from a partially oxidized AlAs layer to induce site-selective nucleation of InGaAs quantum dots. By implementing strain-induced spectral nano-engineering, we achieve separation in emission energy by about 150 meV of positioned and non-positioned quantum dots and a local increase of the emitter density in a single layer. Furthermore, we achieve a threefold increase of the optical intensity and reduce the inhomogeneous broadening of the ensemble emission by 20% via stacking three layers of site-controlled emitters, which is particularly valuable for using the SCQDs in microlaser applications. Moreover, we obtain direct control over emission properties by adjusting the growth and fabrication parameters. Our optimization of site-controlled growth of quantum dots enables the development of photonic devices with enhanced light-matter interaction and microlasers with increased confinement factor and spontaneous emission coupling efficiency. △ Less

Submitted 9 November, 2023; originally announced November 2023.

Amplification of interlayer exciton emission in twisted WSe$_2$/WSe$_2$/MoSe$_2$ heterotrilayers

Authors: Chirag C. Palekar, Paulo E. Faria Junior, Barbara Rosa, Frederico B. Sousa, Leandro M. Malard, Jaroslav Fabian, Stephan Reitzenstein

Abstract: Transition metal dichalcogenide (TMDC) heterostructures have unique properties that depend on the twisting angle and stacking order of two or more monolayers. However, their practical applications are limited by the low photoluminescence yield of interlayer excitons. This limits the use of layered 2D materials as a versatile platform for developing innovative optoelectronic and spintronic devices.… ▽ More Transition metal dichalcogenide (TMDC) heterostructures have unique properties that depend on the twisting angle and stacking order of two or more monolayers. However, their practical applications are limited by the low photoluminescence yield of interlayer excitons. This limits the use of layered 2D materials as a versatile platform for developing innovative optoelectronic and spintronic devices. In this study, we report on the emission enhancement of interlayer excitons in multilayered-stacked monolayers through the fabrication of heterotrilayers consisting of WSe$_2$/WSe$_2$/MoSe$_2$ with differing twist angles. Our results show that an additional WSe$_2$ monolayer introduces new absorption pathways, leading to an improvement in the emission of interlayer excitons by more than an order of magnitude. The emission boost is affected by the twist angle, and we observe a tenfold increase in the heterotrilayer area when there is a 44$^\circ$ angle between the WSe$_2$ and MoSe$_2$ materials, as opposed to their heterobilayer counterparts. Furthermore, using density functional theory, we identify the emergence of new carrier transfer pathways in the three-layer sample which extends the current understanding of 2D semiconducting heterostructures. In addition, our research provides a viable way to significantly enhance the emission of interlayer excitons. The emission enhancement of interlayer excitons is significant not only for studying the fundamental properties of interlayer excitons, but also for enabling optoelectronic applications that utilize engineered 2D quantum materials with high luminescence yield. △ Less

Submitted 4 November, 2023; originally announced November 2023.

Intermediate Field Coupling of Single Epitaxial Quantum Dots to Plasmonic Waveguides

Authors: Michael Seidel, Yuhui Yang, Thorsten Schumacher, Yongheng Huo, Saimon Filipe Covre da Silva, Sven Rodt, Armando Rastelli, Stephan Reitzenstein, Markus Lippitz

Abstract: Key requirements for quantum plasmonic nanocircuits are reliable single-photon sources, high coupling efficiency to the plasmonic structures and low propagation losses. Self-assembled epitaxially grown GaAs quantum dots are close to ideal stable, bright and narrowband single-photon emitters. Likewise, wet-chemically grown monocrystalline silver nanowires are among the best plasmonic waveguides. Ho… ▽ More Key requirements for quantum plasmonic nanocircuits are reliable single-photon sources, high coupling efficiency to the plasmonic structures and low propagation losses. Self-assembled epitaxially grown GaAs quantum dots are close to ideal stable, bright and narrowband single-photon emitters. Likewise, wet-chemically grown monocrystalline silver nanowires are among the best plasmonic waveguides. However, large propagation losses of surface plasmons on the high-index GaAs substrate prevent their direct combination. Here, we show by experiment and simulation that the best overall performance of the quantum plasmonic nanocircuit based on these building blocks is achieved in the intermediate field regime with an additional spacer layer between the quantum dot and the plasmonic waveguide. High-resolution cathodoluminescence measurements allow a precise determination of the coupling distance and support a simple analytical model to explain the overall performance. The coupling efficiency is increased up to four times by standing wave interference near the end of the waveguide. △ Less

Submitted 26 October, 2023; originally announced October 2023.

Comments: Accepted at ACS Nano Letters; contains main text and supporting information

Twist Angle Dependence of Exciton Resonances in WSe$_2$/MoSe$_2$ Moiré Heterostructures

Authors: Chirag Chandrakant Palekar, Joakim Hagel, Barbara Rosa, Samuel Brem, Ching-Wen Shih, Imad Limame, Martin von Helversen, Sefaattin Tongay, Ermin Malic, Stephan Reitzenstein

Abstract: Van der Waals heterostructures based on TMDC semiconducting materials have emerged as promising materials due to their spin-valley properties efficiently contrived by the stacking-twist angle. The twist angle drastically alters the interlayer excitonic response by determining the spatial modulation, confining moiré potential, and atomic reconstruction in those systems. Nonetheless, the impact of t… ▽ More Van der Waals heterostructures based on TMDC semiconducting materials have emerged as promising materials due to their spin-valley properties efficiently contrived by the stacking-twist angle. The twist angle drastically alters the interlayer excitonic response by determining the spatial modulation, confining moiré potential, and atomic reconstruction in those systems. Nonetheless, the impact of the interlayer twist angle on the band alignment of the monolayers composing the heterostructure has received scant attention in the current research. Here, we systematically investigate the twist-angle dependence of intra- and inter-layer excitons in twisted WSe2/MoSe2 heterobilayers. By performing photoluminescence excitation spectroscopy, we identify the twist-angle dependence of interlayer emission response, where an energy redshift of about 100 meV was observed for increasing twist angles. The applied microscopic theory predicts, on the contrary, a blueshift, which suggests that additional features, such as atomic reconstruction, may also surpass the moiré potential confinement. Those findings also prompt the effects of dielectric screening by addressing the redshift response to the stacking layer order. Furthermore, our findings support the evidence of a band offset dependence on the twist angle for the adjacent monolayers composing the heterobilayer system. Our fundamental study of exciton resonances deepens the current understanding of the physics of twisted TMDC heterostructures and paves the way for future experiments and theoretical works. △ Less

Submitted 28 September, 2023; originally announced September 2023.

High-$β$ lasing in photonic-defect semiconductor-dielectric hybrid microresonators with embedded InGaAs quantum dots

Authors: Kartik Gaur, Ching-Wen Shih, Imad Limame, Aris Koulas-Simos, Niels Heermeier, Chirag C. Palekar, Sarthak Tripathi, Sven Rodt, Stephan Reitzenstein

Abstract: We report an easy-to-fabricate microcavity design to produce optically pumped high-$β$ quantum dot microlasers. Our cavity concept is based on a buried photonic-defect for tight lateral mode confinement in a quasi-planar microcavity system, which includes an upper dielectric distributed Bragg reflector (DBR) as a promising alternative to conventional III-V semiconductor DBRs. Through the integrati… ▽ More We report an easy-to-fabricate microcavity design to produce optically pumped high-$β$ quantum dot microlasers. Our cavity concept is based on a buried photonic-defect for tight lateral mode confinement in a quasi-planar microcavity system, which includes an upper dielectric distributed Bragg reflector (DBR) as a promising alternative to conventional III-V semiconductor DBRs. Through the integration of a photonic-defect, we achieve low mode volumes as low as 0.28 $μ$m$^3$, leading to enhanced light-matter interaction, without the additional need for complex lateral nanoprocessing of micropillars. We fabricate semiconductor-dielectric hybrid microcavities, consisting of Al$_{0.9}$Ga$_{0.1}$As/GaAs bottom DBR with 33.5 mirror pairs, dielectric SiO$_{2}$/SiN$_x$ top DBR with 5, 10, 15, and 19 mirror pairs, and photonic-defects with varying lateral size in the range of 1.5 $μ$m to 2.5 $μ$m incorporated into a one-$λ/n$ GaAs cavity with InGaAs quantum dots as active medium. The cavities show distinct emission features with a characteristic photonic defect size-dependent mode separation and \emph{Q}-factors up to 17000 for 19 upper mirror pairs in excellent agreement with numeric simulations. Comprehensive investigations further reveal lasing operation with a systematic increase (decrease) of the $β$-factor (threshold pump power) with the number of mirror pairs in the upper dielectric DBR. Notably, due to the quasi-planar device geometry, the microlasers show high temperature stability, evidenced by the absence of temperature-induced red-shift of emission energy and linewidth broadening typically observed for nano- and microlasers at high excitation powers. △ Less

Submitted 19 September, 2023; originally announced September 2023.

Quantum dots for photonic quantum information technology

Authors: Tobias Heindel, Je-Hyung Kim, Niels Gregersen, Armando Rastelli, Stephan Reitzenstein

Abstract: The generation, manipulation, storage, and detection of single photons play a central role in emerging photonic quantum information technology. Individual photons serve as flying qubits and transmit the quantum information at high speed and with low losses, for example between individual nodes of quantum networks. Due to the laws of quantum mechanics, quantum communication is fundamentally tap-pro… ▽ More The generation, manipulation, storage, and detection of single photons play a central role in emerging photonic quantum information technology. Individual photons serve as flying qubits and transmit the quantum information at high speed and with low losses, for example between individual nodes of quantum networks. Due to the laws of quantum mechanics, quantum communication is fundamentally tap-proof, which explains the enormous interest in this modern information technology. On the other hand, stationary qubits or photonic states in quantum computers can potentially lead to enormous increases in performance through parallel data processing, to outperform classical computers in specific tasks when quantum advantage is achieved. Here, we discuss in depth the great potential of quantum dots (QDs) in photonic quantum information technology. In this context, QDs form a key resource for the implementation of quantum communication networks and photonic quantum computers because they can generate single photons on-demand. Moreover, QDs are compatible with the mature semiconductor technology, so that they can be integrated comparatively easily into nanophotonic structures, which form the basis for quantum light sources and integrated photonic quantum circuits. After a thematic introduction, we present modern numerical methods and theoretical approaches to device design and the physical description of quantum dot devices. We then present modern methods and technical solutions for the epitaxial growth and for the deterministic nanoprocessing of quantum devices based on QDs. Furthermore, we present the most promising concepts for quantum light sources and photonic quantum circuits that include single QDs as active elements and discuss applications of these novel devices in photonic quantum information technology. We close with an overview of open issues and an outlook on future developments. △ Less

Submitted 8 September, 2023; originally announced September 2023.

Comments: Copyright 2023 Optica Publishing Group. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited

Journal ref: Adv. Opt. Photon. 15, 613-738 (2023)

Temperature dependent temporal coherence of metallic-nanoparticle-induced single-photon emitters in a WSe$_{2}$ monolayer

Authors: Martin von Helversen, Lara Greten, Imad Limame, Chin-Wen Shih, Paul Schlaugat, Carlos Antón-Solanas, Christian Schneider, Bárbara Rosa1, Andreas Knorr, Stephan Reitzenstein

Abstract: In recent years, much research has been undertaken to investigate the suitability of two-dimensional materials to act as single-photon sources with high optical and quantum optical quality. Amongst them, transition-metal dichalcogenides, especially WSe$_{2}$, have been one of the subjects of intensive studies. Yet, their single-photon purity and photon indistinguishability, remain the most signifi… ▽ More In recent years, much research has been undertaken to investigate the suitability of two-dimensional materials to act as single-photon sources with high optical and quantum optical quality. Amongst them, transition-metal dichalcogenides, especially WSe$_{2}$, have been one of the subjects of intensive studies. Yet, their single-photon purity and photon indistinguishability, remain the most significant challenges to compete with mature semiconducting systems such as self-assembled InGaAs quantum dots. In this work, we explore the emission properties of quantum emitters in a WSe$_{2}$ monolayer which are induced by metallic nanoparticles. Under quasi-resonant pulsed excitation, we verify clean single-photon emission with a $g^{(2)}(0) = 0.036\pm0.004$. Furthermore, we determine its temperature dependent coherence time via Michelson interferometry, where a value of (13.5$\pm$1.0) ps is extracted for the zero-phonon line (ZPL) at 4 K, which reduces to (9$\pm$2) ps at 8 K. Associated time-resolved photoluminescence experiments reveal a decrease of the decay time from (2.4$\pm$0.1) ns to (0.42$\pm$0.05) ns. This change in decay time is explained by a model which considers a Förster-type resonant energy transfer process, which yields a strong temperature induced energy loss from the SPE to the nearby Ag nanoparticle. △ Less

Submitted 14 July, 2023; originally announced July 2023.

In-situ spontaneous emission control of MoSe$_2$-WSe$_2$ interlayer excitons with near-unity quantum yield

Authors: Bo Han, Chirag Chandrakant Palekar, Sven Stephan, Frederik Lohof, Victor Nikolaevich Mitryakhin, Jens-Christian Drawer, Alexander Steinhoff, Lukas Lackner, Martin Silies, Bárbara Rosa, Martin Esmann, Falk Eilenberger, Christopher Gies, Stephan Reitzenstein, Christian Schneider

Abstract: Optical resonators are a powerful platform to control the spontaneous emission dynamics of excitons in solid-state nanostructures. Here, we study a MoSe$_2$-WSe$_2$ van-der-Waals heterostructure that is integrated in a widely tunable open optical microcavity to gain insights into fundamental optical properties of the emergent interlayer charge-transfer excitons. First, we utilize an ultra-low qual… ▽ More Optical resonators are a powerful platform to control the spontaneous emission dynamics of excitons in solid-state nanostructures. Here, we study a MoSe$_2$-WSe$_2$ van-der-Waals heterostructure that is integrated in a widely tunable open optical microcavity to gain insights into fundamental optical properties of the emergent interlayer charge-transfer excitons. First, we utilize an ultra-low quality factor open planar vertical cavity and investigate the modification of the excitonic lifetime as on- and off-resonant conditions are met with consecutive longitudinal modes. Time-resolved photoluminescence measurements reveal that the interlayer exciton lifetime can thus be periodically tuned with an amplitude of 110 ps. The resulting oscillations of the interlayer exciton lifetime allows us to extract a 0.5 ns free-space radiative lifetime and a quantum efficiency as high as 81 \%. We subsequently engineer the local density of optical states by introducing a spatially confined and fully spectrally tunable Tamm-plasmon resonance. The dramatic redistribution of the local optical modes in this setting allows us to encounter a profound inhibition of spontaneous emission of the interlayer excitons by a factor of 3.2. We expect that specifically engineering the inhibition of radiation from moiré excitons is a powerful tool to steer their thermalization, and eventually their condensation into coherent condensate phases. △ Less

Submitted 20 December, 2023; v1 submitted 26 June, 2023; originally announced June 2023.

Comments: 31 pages, 9 figures, SPP 2244 (funding numbers: Schn1376 14.1, Re2974/26-1 and Gi1121/4-1)

Controlled Coherent Coupling in a Quantum Dot Molecule Revealed by Ultrafast Four-Wave Mixing Spectroscopy

Authors: Daniel Wigger, Johannes Schall, Marielle Deconinck, Nikolai Bart, Paweł Mrowiński, Mateusz Krzykowski, Krzysztof Gawarecki, Martin von Helversen, Ronny Schmidt, Lucas Bremer, Frederik Bopp, Dirk Reuter, Andreas D. Wieck, Sven Rodt, Julien Renard, Gilles Nogues, Arne Ludwig, Paweł Machnikowski, Jonathan J. Finley, Stephan Reitzenstein, Jacek Kasprzak

Abstract: Semiconductor quantum dot molecules are considered as promising candidates for quantum technological applications due to their wide tunability of optical properties and coverage of different energy scales associated with charge and spin physics. While previous works have studied the tunnel-coupling of the different excitonic charge complexes shared by the two quantum dots by conventional optical s… ▽ More Semiconductor quantum dot molecules are considered as promising candidates for quantum technological applications due to their wide tunability of optical properties and coverage of different energy scales associated with charge and spin physics. While previous works have studied the tunnel-coupling of the different excitonic charge complexes shared by the two quantum dots by conventional optical spectroscopy, we here report on the first demonstration of a coherently controlled inter-dot tunnel-coupling focusing on the quantum coherence of the optically active trion transitions. We employ ultrafast four-wave mixing spectroscopy to resonantly generate a quantum coherence in one trion complex, transfer it to and probe it in another trion configuration. With the help of theoretical modelling on different levels of complexity we give an instructive explanation of the underlying coupling mechanism and dynamical processes. △ Less

Submitted 20 April, 2023; originally announced April 2023.

Magnetic tuning of the tunnel coupling in an optically active quantum dot molecule

Authors: Frederik Bopp, Charlotte Cullip, Christopher Thalacker, Michelle Lienhart, Johannes Schall, Nikolai Bart, Friedrich Sbresny, Katarina Boos, Sven Rodt, Dirk Reuter, Arne Ludwig, Andreas D. Wieck, Stephan Reitzenstein, Filippo Troiani, Guido Goldoni, Elisa Molinari, Kai Müller, Jonathan J. Finley

Abstract: Self-assembled optically active quantum dot molecules (QDMs) allow the creation of protected qubits via singlet-triplet spin states. The qubit energy splitting of these states is defined by the tunnel coupling strength and is, therefore, determined by the potential landscape and thus fixed during growth. Applying an in-plane magnetic field increases the confinement of the hybridized wave functions… ▽ More Self-assembled optically active quantum dot molecules (QDMs) allow the creation of protected qubits via singlet-triplet spin states. The qubit energy splitting of these states is defined by the tunnel coupling strength and is, therefore, determined by the potential landscape and thus fixed during growth. Applying an in-plane magnetic field increases the confinement of the hybridized wave functions within the quantum dots, leading to a decrease of the tunnel coupling strength. We achieve a tuning of the coupling strength by $(53.4\pm1.7)$ %. The ability to fine-tune this coupling is essential for quantum network and computing applications that require quantum systems with near identical performance. △ Less

Submitted 22 March, 2023; originally announced March 2023.

Comments: Main: 6 pages, 3 figures, Supplemental: 4 pages, 2 figures

Confined-state physics and signs of fermionization of moiré excitons in WSe$_2$/MoSe$_2$ heterobilayers

Authors: Frederik Lohof, Johannes Michl, Alexander Steinhoff, Bo Han, Martin von Helversen, Sefaattin Tongay, Kenji Watanabe, Takashi Taniguchi, Sven Höfling, Stephan Reitzenstein, Carlos Anton-Solanas, Christopher Gies, Christian Schneider

Abstract: We revisit and extend the standard bosonic interpretation of interlayer excitons in the moiré potential of twisted heterostructures of transition-metal dichalcogenides. In our experiments, we probe a high quality MoSe$_2$/WSe$_2$ van der Waals bilayer heterostructure via density-dependent photoluminescence spectroscopy and reveal strongly developed, unconventional spectral shifts of the emergent m… ▽ More We revisit and extend the standard bosonic interpretation of interlayer excitons in the moiré potential of twisted heterostructures of transition-metal dichalcogenides. In our experiments, we probe a high quality MoSe$_2$/WSe$_2$ van der Waals bilayer heterostructure via density-dependent photoluminescence spectroscopy and reveal strongly developed, unconventional spectral shifts of the emergent moiré exciton resonances. The observation of saturating blueshifts of successive exciton resonances allow us to explain their physics in terms of a model utilizing fermionic saturable absorbers. This approach is strongly inspired by established quantum-dot models, which underlines the close analogy of interlayer excitons trapped in pockets of the moiré potential, and quantum emitters with discrete eigenstates. △ Less

Submitted 15 May, 2023; v1 submitted 28 February, 2023; originally announced February 2023.

Coherent driving of direct and indirect excitons in a quantum dot molecule

Authors: Frederik Bopp, Johannes Schall, Nikolai Bart, Florian Vogl, Charlotte Cullip, Friedrich Sbresny, Katarina Boos, Christopher Thalacker, Michelle Lienhart, Sven Rodt, Dirk Reuter, Arne Ludwig, Andreas Wieck, Stephan Reitzenstein, Kai Müller, Jonathan J. Finley

Abstract: Quantum dot molecules (QDMs) are one of the few quantum light sources that promise deterministic generation of one- and two-dimensional photonic graph states. The proposed protocols rely on coherent excitation of the tunnel-coupled and spatially indirect exciton states. Here, we demonstrate power-dependent Rabi oscillations of direct excitons, spatially indirect excitons, and excitons with a hybri… ▽ More Quantum dot molecules (QDMs) are one of the few quantum light sources that promise deterministic generation of one- and two-dimensional photonic graph states. The proposed protocols rely on coherent excitation of the tunnel-coupled and spatially indirect exciton states. Here, we demonstrate power-dependent Rabi oscillations of direct excitons, spatially indirect excitons, and excitons with a hybridized electron wave function. An off-resonant detection technique based on phonon-mediated state transfer allows for spectrally filtered detection under resonant excitation. Applying a gate voltage to the QDM-device enables a continuous transition between direct and indirect excitons and, thereby, control of the overlap of the electron and hole wave function. This does not only vary the Rabi frequency of the investigated transition by a factor of $\approx3$, but also allows to optimize graph state generation in terms of optical pulse power and reduction of radiative lifetimes. △ Less

Submitted 31 January, 2023; originally announced January 2023.

Comments: 6 pages, 3 figures

Journal ref: Phys. Rev. B 107, 165426 (2023)

Low-threshold lasing of optically pumped micropillar lasers with Al$_{0.2}$Ga$_{0.8}$As/Al$_{0.9}$Ga$_{0.1}$As distributed Bragg reflectors

Authors: Ching-Wen Shih, Imad Limame, Sebastian Krüger, Chirag C. Palekar, Aris Koulas-Simos, Daniel Brunner, Stephan Reitzenstein

Abstract: We report on the design, realization and characterization of optically pumped micropillar lasers with low-absorbing Al$_{0.2}$Ga$_{0.8}$As/Al$_{0.9}$Ga$_{0.1}$As dielectric Bragg reflectors (DBRs) instead of commonly used GaAs/AlGaAs DBRs. A layer of (In, Ga)As quantum dots (QDs) is embedded in the GaAs $λ$-cavity of as an active medium. We experimentally study the lasing characteristics of the fa… ▽ More We report on the design, realization and characterization of optically pumped micropillar lasers with low-absorbing Al$_{0.2}$Ga$_{0.8}$As/Al$_{0.9}$Ga$_{0.1}$As dielectric Bragg reflectors (DBRs) instead of commonly used GaAs/AlGaAs DBRs. A layer of (In, Ga)As quantum dots (QDs) is embedded in the GaAs $λ$-cavity of as an active medium. We experimentally study the lasing characteristics of the fabricated micropillars by means of low-temperature photoluminescence with varying pump laser's wavelength between 532 nm and 899 nm. The incorporation of 20% Al content in the DBRs opens an optical pumping window from 700 nm to 820 nm, where the excitation laser light can effectively reach the GaAs cavity above its bandgap, while remaining transparent to the DBRs. This results in a substantially improved pump efficiency, a low lasing threshold, and a high thermal stability. Pump laser wavelengths outside of the engineered spectral window lead to low pump efficiency due to strong absorption by the top DBR, or inefficient excitation of pump-level excitons, respectively. The superiority of the absorption-free modified DBRs is demonstrated by simply switching the pump laser wavelength from 671 nm to 708 nm, which crosses the DBRs absorption edge and drastically reduces the lasing threshold by more than an order of magnitude from (363.5 $\pm$ 18.5) $μ$W to (12.8 $\pm$ 0.3) $μ$W. △ Less

Submitted 14 March, 2023; v1 submitted 19 January, 2023; originally announced January 2023.

Scalable deterministic integration of two quantum dots into an on-chip quantum circuit

Authors: Shulun Li, Yuhui Yang, Johannes Schall, Martin von Helversen, Chirag Palekar, Hanqing Liu, Léo Roche, Sven Rodt, Haiqiao Ni, Yu Zhang, Zhichuan Niu, Stephan Reitzenstein

Abstract: Integrated quantum photonic circuits (IQPCs) with deterministically integrated quantum emitters are critical elements for scalable quantum information applications and have attracted significant attention in recent years. However, scaling up them towards fully functional photonic circuits with multiple deterministically integrated quantum emitters to generate photonic input states remains a great… ▽ More Integrated quantum photonic circuits (IQPCs) with deterministically integrated quantum emitters are critical elements for scalable quantum information applications and have attracted significant attention in recent years. However, scaling up them towards fully functional photonic circuits with multiple deterministically integrated quantum emitters to generate photonic input states remains a great challenge. In this work, we report on a monolithic prototype IQPC consisting of two pre-selected quantum dots deterministically integrated into nanobeam cavities at the input ports of a 2x2 multimode interference beam-splitter. The on-chip beam splitter exhibits a splitting ratio of nearly 50/50 and the integrated quantum emitters have high single-photon purity, enabling on-chip HBT experiments, depicting deterministic scalability. Overall, this marks a cornerstone toward scalable and fully-functional IQPCs. △ Less

Submitted 14 March, 2023; v1 submitted 29 December, 2022; originally announced December 2022.

Quantum dot molecule devices with optical control of charge status and electronic control of coupling

Authors: Frederik Bopp, Jonathan Rojas, Natalia Revenga, Hubert Riedl, Friedrich Sbresny, Katarina Boos, Tobias Simmet, Arash Ahmadi, David Gershoni, Jacek Kasprzak, Arne Ludwig, Stephan Reitzenstein, Andreas Wieck, Dirk Reuter, Kai Muller, Jonathan J. Finley

Abstract: Tunnel-coupled pairs of optically active quantum dots - quantum dot molecules (QDMs) - offer the possibility to combine excellent optical properties such as strong light-matter coupling with two-spin singlet-triplet ($S-T_0$) qubits having extended coherence times. The $S-T_0$ basis formed using two spins is inherently protected against electric and magnetic field noise. However, since a single ga… ▽ More Tunnel-coupled pairs of optically active quantum dots - quantum dot molecules (QDMs) - offer the possibility to combine excellent optical properties such as strong light-matter coupling with two-spin singlet-triplet ($S-T_0$) qubits having extended coherence times. The $S-T_0$ basis formed using two spins is inherently protected against electric and magnetic field noise. However, since a single gate voltage is typically used to stabilize the charge occupancy of the dots and control the inter-dot orbital couplings, operation of the $S-T_0$ qubits under optimal conditions remains challenging. Here, we present an electric field tunable QDM that can be optically charged with one (1h) or two holes (2h) on demand. We perform a four-phase optical and electric field control sequence that facilitates the sequential preparation of the 2h charge state and subsequently allows flexible control of the inter-dot coupling. Charges are loaded via optical pumping and electron tunnel ionization. We achieve one- and two-hole charging efficiencies of 93.5 $\pm$ 0.8 % and 80.5 $\pm$ 1.3 %, respectively. Combining efficient charge state preparation and precise setting of inter-dot coupling allows control of few-spin qubits, as would be required for on-demand generation of two-dimensional photonic cluster states or quantum transduction between microwaves and photons. △ Less

Submitted 20 May, 2022; originally announced May 2022.

Comments: 4 figures

Journal ref: Adv Quantum Technol. 2022, 5, 2200049

Numerical optimization of single-mode fiber-coupled single-photon sources based on semiconductor quantum dots

Authors: Lucas Bremer, Carlos Jimenez, Simon Thiele, Ksenia Weber, Tobias Huber, Sven Rodt, Alois Herkommer, Sven Burger, Sven Höfling, Harald Giessen, Stephan Reitzenstein

Abstract: We perform extended numerical studies to maximize the overall photon coupling efficiency of fiber-coupled quantum dot single-photon sources emitting in the near-infrared and telecom regime. Using the finite element method, we optimize the photon extraction and fiber-coupling efficiency of quantum dot single-photon sources based on micromesas, microlenses, circular Bragg grating cavities and microp… ▽ More We perform extended numerical studies to maximize the overall photon coupling efficiency of fiber-coupled quantum dot single-photon sources emitting in the near-infrared and telecom regime. Using the finite element method, we optimize the photon extraction and fiber-coupling efficiency of quantum dot single-photon sources based on micromesas, microlenses, circular Bragg grating cavities and micropillars. The numerical simulations which consider the entire system consisting of the quantum dot source itself, the coupling lens, and the single-mode fiber yield overall photon coupling efficiencies of up to 83%. Our work provides objectified comparability of different fiber-coupled single-photon sources and proposes optimized geometries for the realization of practical and highly efficient quantum dot single-photon sources. △ Less

Submitted 19 February, 2022; originally announced February 2022.

Journal ref: Opt. Express 30, 15913 (2022)

Quantum fluctuations and lineshape anomaly in a high-$β$ silver-coated InP-based metallic nanolaser

Authors: A. Koulas-Simos, J. Buchgeister, M. Drechsler, T. Zhang, K. Laiho, G. Sinatkas, J. Xu, F. Lohof, Q. Kan, R. K. Zhang, F. Jahnke, C. Gies, W. W. Chow, C. Z. Ning, S. Reitzenstein

Abstract: Metallic nanocavity lasers provide important technological advancement towards even smaller integrable light sources. They give access to widely unexplored lasing physics in which the distinction between different operational regimes, like those of thermal or a coherent light emission, becomes increasingly challenging upon approaching a device with a near-perfect spontaneous-emission coupling fact… ▽ More Metallic nanocavity lasers provide important technological advancement towards even smaller integrable light sources. They give access to widely unexplored lasing physics in which the distinction between different operational regimes, like those of thermal or a coherent light emission, becomes increasingly challenging upon approaching a device with a near-perfect spontaneous-emission coupling factor $β$. In fact, quantum-optical studies have to be employed to reveal a transition to coherent emission in the intensity fluctuation behavior of nanolasers when the input-output characteristic appears thresholdless for $β= 1$ nanolasers. Here, we identify a new indicator for lasing operation in high-$β$ lasers by showing that stimulated emission can give rise to a lineshape anomaly manifesting as a transition from a Lorentzian to a Gaussian component in the emission linewidth that dominates the spectrum above the lasing threshold. △ Less

Submitted 14 January, 2022; originally announced January 2022.

Spin-lasing in bimodal quantum dot micropillar cavities

Authors: Niels Heermeier, Tobias Heuser, Jan Große, Natalie Jung, Arsenty Kaganskiy, Markus Lindemann, Nils C. Gerhardt, Martin R. Hofmann, Stephan Reitzenstein

Abstract: Spin-controlled lasers are highly interesting photonic devices and have been shown to provide ultra-fast polarization dynamics in excess of 200 GHz. In contrast to conventional semiconductor lasers their temporal properties are not limited by the intensity dynamics, but are governed primarily by the interaction of the spin dynamics with the birefringent mode splitting that determines the polarizat… ▽ More Spin-controlled lasers are highly interesting photonic devices and have been shown to provide ultra-fast polarization dynamics in excess of 200 GHz. In contrast to conventional semiconductor lasers their temporal properties are not limited by the intensity dynamics, but are governed primarily by the interaction of the spin dynamics with the birefringent mode splitting that determines the polarization oscillation frequency. Another class of modern semiconductor lasers are high-beta emitters which benefit from enhanced light-matter interaction due to strong mode confinement in low-mode-volume microcavities. In such structures, the emission properties can be tailored by the resonator geometry to realize for instance bimodal emission behavior in slightly elliptical micropillar cavities. We utilize this attractive feature to demonstrate and explore spin-lasing effects in bimodal high-beta quantum dot micropillar lasers. The studied microlasers with a beta-factor of 4% show spin-laser effects with experimental polarization oscillation frequencies up to 15 GHz and predicted frequencies up to about 100 GHz which are controlled by the ellipticity of the resonator. Our results reveal appealing prospects for very compact, ultra-fast and energy-efficient spin-lasers and can pave the way for future purely electrically injected spin-lasers enabled by short injection path lengths. △ Less

Submitted 13 October, 2021; originally announced October 2021.

Quantum Efficiency and Oscillator Strength of InGaAs Quantum Dots for Single-Photon Sources emitting in the Telecommunication O-Band

Authors: Jan Große, Pawel Mwrowinski, Nicole Srocka, Stephan Reitzenstein

Abstract: We demonstrate experimental results based on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the internal quantum efficiency (IQE) of InGaAs quantum dots (QDs). Using a strain-reducing layer (SRL) these QDs can be employed for the manufacturing of single-photon sources (SPS) emitting in the telecom O-Band. The OS and IQE are evaluated by determining the r… ▽ More We demonstrate experimental results based on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the internal quantum efficiency (IQE) of InGaAs quantum dots (QDs). Using a strain-reducing layer (SRL) these QDs can be employed for the manufacturing of single-photon sources (SPS) emitting in the telecom O-Band. The OS and IQE are evaluated by determining the radiative and non-radiative decay rate under variation of the optical density of states at the position of the QD as proposed and applied in J. Johansen et al. Phys. Rev. B 77, 073303 (2008) for InGaAs QDs emitting at wavelengths below 1 $μ$m. For this purpose, we perform measurements on a QD sample for different thicknesses of the capping layer realized by a controlled wet-chemical etching process. From numeric modelling the radiative and nonradiative decay rates dependence on the capping layer thickness, we determine an OS of 24.6 $\pm$ 3.2 and a high IQE of about (85 $\pm$ 10)% for the long-wavelength InGaAs QDs. △ Less

Submitted 9 June, 2021; originally announced June 2021.

Intrinsic circularly-polarized exciton emission in a twisted van-der-Waals heterostructure

Authors: J. Michl, S. A. Tarasenko, F. Lohof, G. Gies, M. von Helversen, R. Sailus, S. Tongay, T. Taniguchi, K. Watanabe, T. Heindel, S. Reitzenstein, T. Shubina, S. Höfling, C. Antón-Solanas, C. Schneider

Abstract: The investigation of excitons in van-der-Waals heterostructures has led to profound insights into the interplay of crystal symmetries and fundamental effects of light-matter coupling. In particular, the polarization selection rules in undistorted, slightly twisted heterostructures of MoSe$_2$/WSe$_2$ were found to be connected with the Moiré superlattice. Here, we report the emergence of a signifi… ▽ More The investigation of excitons in van-der-Waals heterostructures has led to profound insights into the interplay of crystal symmetries and fundamental effects of light-matter coupling. In particular, the polarization selection rules in undistorted, slightly twisted heterostructures of MoSe$_2$/WSe$_2$ were found to be connected with the Moiré superlattice. Here, we report the emergence of a significant degree of circular polarization of excitons in such a hetero-structure upon non-resonant driving with a linearly polarized laser. The effect is present at zero magnetic field, and sensibly reacts on perpendicularly applied magnetic field. The giant magnitude of polarization, which cannot be explained by conventional birefringence or optical activity of the twisted lattice, suggests a kinematic origin arising from an emergent pyromagnetic symmetry in our structure, which we exploit to gain insight into the microscopic processes of our device. △ Less

Submitted 20 May, 2021; originally announced May 2021.

Comments: Main text: 8 pages, 3 figures. Supplementary: 2 pages

Bright electrically controllable quantum-dot-molecule devices fabricated by in-situ electron-beam lithography

Authors: Johannes Schall, Marielle Deconinck, Nikolai Bart, Matthias Florian, Martin von Helversen, Christian Dangel, Ronny Schmidt, Lucas Bremer, Frederik Bopp, Isabell Hüllen, Christopher Gies, Dirk Reuter, Andreas D. Wieck, Sven Rodt, Jonathan J. Finley, Frank Jahnke, Arne Ludwig, Stephan Reitzenstein

Abstract: Self-organized semiconductor quantum dots represent almost ideal two-level systems, which have strong potential to applications in photonic quantum technologies. For instance, they can act as emitters in close-to-ideal quantum light sources. Coupled quantum dot systems with significantly increased functionality are potentially of even stronger interest since they can be used to host ultra-stable s… ▽ More Self-organized semiconductor quantum dots represent almost ideal two-level systems, which have strong potential to applications in photonic quantum technologies. For instance, they can act as emitters in close-to-ideal quantum light sources. Coupled quantum dot systems with significantly increased functionality are potentially of even stronger interest since they can be used to host ultra-stable singlet-triplet spin qubits for efficient spin-photon interfaces and for a deterministic photonic 2D cluster-state generation. We realize an advanced quantum dot molecule (QDM) device and demonstrate excellent optical properties. The device includes electrically controllable QDMs based on stacked quantum dots in a pin-diode structure. The QDMs are deterministically integrated into a photonic structure with a circular Bragg grating using in-situ electron beam lithography. We measure a photon extraction efficiency of up to (24$\pm$4)% in good agreement with numerical simulations. The coupling character of the QDMs is clearly demonstrated by bias voltage dependent spectroscopy that also controls the orbital couplings of the QDMs and their charge state in quantitative agreement with theory. The QDM devices show excellent single-photon emission properties with a multi-photon suppression of $g^{(2)}(0) = (3.9 \pm 0.5) \cdot 10^{-3}$. These metrics make the developed QDM devices attractive building blocks for use in future photonic quantum networks using advanced nanophotonic hardware. △ Less

Submitted 8 April, 2021; v1 submitted 10 January, 2021; originally announced January 2021.

Thermal stability of emission from single InGaAs/GaAs quantum dots at the telecom O-band

Authors: Paweł Holewa, Marek Burakowski, Anna Musiał, Nicole Srocka, David Quandt, André Strittmatter, Sven Rodt, Stephan Reitzenstein, Grzegorz Sęk

Abstract: Single-photon sources are key building blocks in most of the emerging secure telecommunication and quantum information processing schemes. Semiconductor quantum dots (QD) have been proven to be the most prospective candidates. However, their practical use in fiber-based quantum communication depends heavily on the possibility of operation in the telecom bands and at temperatures not requiring exte… ▽ More Single-photon sources are key building blocks in most of the emerging secure telecommunication and quantum information processing schemes. Semiconductor quantum dots (QD) have been proven to be the most prospective candidates. However, their practical use in fiber-based quantum communication depends heavily on the possibility of operation in the telecom bands and at temperatures not requiring extensive cryogenic systems. In this paper we present a temperature-dependent study on single QD emission and single-photon emission from metalorganic vapour-phase epitaxy-grown InGaAs/GaAs QDs emitting in the telecom O-band. Micro-photoluminescence studies reveal that trapped holes in the vicinity of a QD act as reservoir of carriers that can be exploited to enhance photoluminescence from trion states observed at elevated temperatures up to at least 80 K. The luminescence quenching is mainly related to the promotion of holes to higher states in the valence band and this aspect must be primarily addressed in order to further increase the thermal stability of emission. Photon autocorrelation measurements yield single photon emission with a purity of $g_{50\mathrm{K}}^{(2)}\left(0\right)=0.13$ up to 50 K. Our results imply that these nanostructures are very promising candidates for single-photon sources at elevated temperatures in the telecom O-band and highlight means for improvements in their performance. △ Less

Submitted 19 November, 2020; v1 submitted 20 October, 2020; originally announced October 2020.

Comments: 3 figures

Journal ref: Scientific Reports 10, 21816 (2020)

Deterministically fabricated strain-tunable quantum dot single-photon sources emitting in the telecom O-band

Authors: Nicole Srocka, Pawel Mrowiński, Jan Große, Marco Schmidt, Sven Rodt, Stephan Reitzenstein

Abstract: Most quantum communication schemes aim at the long-distance transmission of quantum information. In the quantum repeater concept, the transmission line is subdivided into shorter links interconnected by entanglement distribution via Bell-state measurements to overcome inherent channel losses. This concept requires on-demand single-photon sources with a high degree of multi-photon suppression and h… ▽ More Most quantum communication schemes aim at the long-distance transmission of quantum information. In the quantum repeater concept, the transmission line is subdivided into shorter links interconnected by entanglement distribution via Bell-state measurements to overcome inherent channel losses. This concept requires on-demand single-photon sources with a high degree of multi-photon suppression and high indistinguishability within each repeater node. For a successful operation of the repeater, a spectral matching of remote quantum light sources is essential. We present a spectrally tunable single-photon source emitting in the telecom O-band with the potential to function as a building block of a quantum communication network based on optical fibers. A thin membrane of GaAs embedding InGaAs quantum dots (QDs) is attached onto a piezoelectric actuator via gold thermocompression bonding. Here the thin gold layer acts simultaneously as an electrical contact, strain transmission medium and broadband backside mirror for the QD-micromesa. The nanofabrication of the QD-micromesa is based on in-situ electron-beam lithography, which makes it possible to integrate pre-selected single QDs deterministically into the center of monolithic micromesa structures. The QD pre-selection is based on distinct single-QD properties, signal intensity and emission energy. In combination with strain-induced fine tuning this offers a robust method to achieve spectral resonance in the emission of remote QDs. We show that the spectral tuning has no detectable influence on the multi-photon suppression with $g^{(2)}(0)$ as low as 2-4% and that the emission can be stabilized to an accuracy of 4 $μ$eV using a closed-loop optical feedback. △ Less

Submitted 6 November, 2020; v1 submitted 26 September, 2020; originally announced September 2020.

Numerical Investigation of Light Emission from Quantum Dots Embedded into On-Chip, Low Index Contrast Optical Waveguides

Authors: Theresa Hoehne, Peter Schnauber, Sven Rodt, Stephan Reitzenstein, Sven Burger

Abstract: Single-photon emitters integrated into quantum optical circuits will enable new, miniaturized quantum optical devices. Here, we numerically investigate semiconductor quantum dots embedded to low refractive index contrast waveguides. We discuss a model to compute the coupling efficiency of the emitted light field to the fundamental propagation mode of the waveguide, and we optimize the waveguide di… ▽ More Single-photon emitters integrated into quantum optical circuits will enable new, miniaturized quantum optical devices. Here, we numerically investigate semiconductor quantum dots embedded to low refractive index contrast waveguides. We discuss a model to compute the coupling efficiency of the emitted light field to the fundamental propagation mode of the waveguide, and we optimize the waveguide dimensional parameters for maximum coupling efficiency. Further, we show that for a laterally cropped waveguide the interplay of Purcell-enhancement and optimized field profile can enhance the coupling efficiency by a factor of about two. △ Less

Submitted 18 June, 2020; originally announced June 2020.

Journal ref: Phys. Status Solidi B 256, 1800437 (2019)

Quantum dot single-photon emission coupled into single-mode fibers with 3D printed micro-objectives

Authors: Lucas Bremer, Ksenia Weber, Sarah Fischbach, Simon Thiele, Marco Schmidt, Arsenty Kakganskiy, Sven Rodt, Alois Herkommer, Marc Sartison, Simone Luca Portalupi, Peter Michler, Harald Giessen, Stephan Reitzenstein

Abstract: User-friendly single-photon sources with high photon-extraction efficiency are crucial building blocks for photonic quantum applications. For many of these applications, such as long-distance quantum key distribution, the use of single-mode optical fibers is mandatory, which leads to stringent requirements regarding the device design and fabrication. We report on the on-chip integration of a quant… ▽ More User-friendly single-photon sources with high photon-extraction efficiency are crucial building blocks for photonic quantum applications. For many of these applications, such as long-distance quantum key distribution, the use of single-mode optical fibers is mandatory, which leads to stringent requirements regarding the device design and fabrication. We report on the on-chip integration of a quantum dot microlens with a 3D-printed micro-objective in combination with a single-mode on-chip fiber coupler. The practical quantum device is realized by deterministic fabrication of the QD-microlens via in-situ electron-beam lithography and 3D two-photon laser writing of the on-chip micro-objective and fiber-holder. The QD with microlens is an efficient single-photon source, whose emission is collimated by the on-chip micro-objective. A second polymer microlens is located at the end facet of the single-mode fiber and ensures that the collimated light is efficiently coupled into the fiber core. For this purpose, the fiber is placed in the on-chip fiber chuck, which is precisely aligned to the QD-microlens thanks to the sub-$μ$m processing accuracy of high-resolution two-photon direct laser writing. This way, we obtain a fully integrated high-quality quantum device with broadband photon extraction efficiency, a single-mode fiber-coupling efficiency of 26%, a single-photon flux of 1.5 MHz at single-mode fibre output and a multi-photon probability of 13 % under pulsed optical excitation. In addition, the stable design of the developed fiber-coupled quantum device makes it highly attractive for integration into user-friendly plug-and-play quantum applications. △ Less

Submitted 22 May, 2020; originally announced May 2020.

Directional single-photon emission from deterministic quantum dot waveguide structures

Authors: Paweł Mrowiński, Peter Schnauber, Arsenty Kaganskiy, Johannes Schall, Sven Burger, Sven Rodt, Stephan Reitzenstein

Abstract: Chiral light-matter interaction can lead to directional emission of two-level light emitters in waveguides. This interesting physics effect has raised considerable attention in recent years especially in terms of on-chip quantum systems. In this context, our work focuses on tailoring single semiconductor quantum dot-waveguide (QD-WG) systems to emit single photons with high directionality. We use… ▽ More Chiral light-matter interaction can lead to directional emission of two-level light emitters in waveguides. This interesting physics effect has raised considerable attention in recent years especially in terms of on-chip quantum systems. In this context, our work focuses on tailoring single semiconductor quantum dot-waveguide (QD-WG) systems to emit single photons with high directionality. We use low-temperature in-situ electron-beam lithography enabled by cathodoluminescence mapping to select suitable QDs and to integrate them deterministically into linear waveguide structures at specific chiral points determined by numerical calculations. We observe excitonic and biexcitonic emission from the fabricated QD-WG structure in a confocal microPL setup enabling the optical characterization in terms of directional emission of circularly polarized photons emitted by integrated QDs. Our results show a high degree of anisotropy on the level of 54% for directional QD emission and antibunching in autocorrelation experiment confirming the fabricated QD-WG system, which is a prerequisite for using this effect in advanced applications in integrated quantum circuits. △ Less

Submitted 19 May, 2020; originally announced May 2020.

Journal ref: Phys. Status Solidi RRL 14, 2000115 (2020)

Deterministically fabricated quantum dot single-photon source emitting indistinguishable photons in the telecom O-band

Authors: N. Srocka, P. Mrowiński, J. Große, M. von Helversen, T. Heindel, S. Rodt, S. Reitzenstein

Abstract: In this work we develop and study single-photon sources based on InGaAs quantum dots (QDs) emitting in the telecom O-band. The quantum devices are fabricated using in-situ electron beam lithography in combination with the thermocompression bonding to realize a backside gold mirror. Our structures are based on InGaAs/GaAs heterostructures, where the QD emission is redshifted towards the telecom O-b… ▽ More In this work we develop and study single-photon sources based on InGaAs quantum dots (QDs) emitting in the telecom O-band. The quantum devices are fabricated using in-situ electron beam lithography in combination with the thermocompression bonding to realize a backside gold mirror. Our structures are based on InGaAs/GaAs heterostructures, where the QD emission is redshifted towards the telecom O-band at 1.3 μm via a strain reducing layer. QDs pre-selected by cathodoluminescence mapping are embedded into mesa structures with a back-side gold mirror for enhanced photon-extraction efficiency. Photon-autocorrelation measurements under pulsed non-resonant wetting-layer excitation are performed at temperatures up to 40 K showing pure single-photon emission which makes the devices compatible with stand-alone operation using Stirling cryocoolers. Using pulsed p-shell excitation we realize single-photon emission with high multi-photon suppression of g(2)(0) = 0.027 +- 0.005, post-selected two-photon interference of about (96 +- 10) % and an associated coherence time of (212 +- 25) ps. Moreover, the structures show an extraction efficiency of ~5 %, which compares well with values expected from numeric simulations of this photonic structure. Further improvements on our devices will enable implementations of quantum communication via optical fibers. △ Less

Submitted 15 April, 2020; v1 submitted 9 April, 2020; originally announced April 2020.

Entanglement robustness to excitonic spin precession in a quantum dot

Authors: Samir Bounouar, Gabriel Rein, Kisa Barkemeyer, Julian Schleibner, Peter Schnauber, Manuel Gschrey, Jan-Hindrik Schulze, André Strittmatter, Sven Rodt, Andreas Knorr, Alexander Carmele, Stephan Reitzenstein

Abstract: A semiconductor quantum dot (QD) is an attractive resource to generate polarization-entangled photon pairs. We study the excitonic spin precession (flip-flop) in a family of QDs with different excitonic fine-structure splitting (FSS) and its impact on the entanglement of photons generated from the excitonic-biexcitonic radiative cascade. Our results reveal that coherent processes leave the time po… ▽ More A semiconductor quantum dot (QD) is an attractive resource to generate polarization-entangled photon pairs. We study the excitonic spin precession (flip-flop) in a family of QDs with different excitonic fine-structure splitting (FSS) and its impact on the entanglement of photons generated from the excitonic-biexcitonic radiative cascade. Our results reveal that coherent processes leave the time post-selected entanglement of QDs with finite FSS unaffected while changing the eigenstates of the system. The flip-flop's precession is observed via quantum tomography through anomalous oscillations of the coincidences in the rectilinear basis. A theoretical model is constructed with the inclusion of an excitonic flip-flop rate and is compared with a two-photon quantum tomography measurement on a QD exhibiting the spin flip-flop mechanism. A generalization of the theoretical model allows estimating the degree of entanglement as a function of the FSS and the spin-flip rate. For a finite temporal resolution, the negativity is found to be oscillating with respect to both the FSS and the spin-flip rate. This oscillatory behavior disappears for perfect temporal resolution and maximal entanglement is retrieved despite the flip-flop process. △ Less

Submitted 31 January, 2020; originally announced January 2020.

Journal ref: Phys. Rev. B 102, 045304 (2020)

Plug&play fibre-coupled 73 kHz single-photon source operating in the telecom O-band

Authors: Anna Musial, Kinga Zolnacz, Nicole Srocka, Oleh Kravets, Jan Große, Jacek Olszewski, Krzysztof Poturaj, Grzegorz Wojcik, Pawel Mergo, Kamil Dybka, Mariusz Dyrkacz, Michal Dlubek, Kristian Lauritsen, Andreas Bülter, Philipp-Immanuel Schneider, Lin Zschiedrich, Sven Burger, Sven Rodt, Waclaw Urbanczyk, Grzegorz Sek, Stephan Reitzenstein

Abstract: A user-friendly fibre-coupled single-photon source operating at telecom wavelengths is a key component of photonic quantum networks providing long-haul ultra-secure data exchange. To take full advantage of quantum-mechanical data protection and to maximize the transmission rate and distance, a true quantum source providing single-photons on demand is highly desirable. We tackle this great challeng… ▽ More A user-friendly fibre-coupled single-photon source operating at telecom wavelengths is a key component of photonic quantum networks providing long-haul ultra-secure data exchange. To take full advantage of quantum-mechanical data protection and to maximize the transmission rate and distance, a true quantum source providing single-photons on demand is highly desirable. We tackle this great challenge by developing a ready to use semiconductor quantum dot (QD)-based device that launches single photons at a wavelength of 1.3 um directly into a single-mode optical fibre. In our approach the QD is deterministically integrated into a nanophotonic structure to ensure efficient on-chip coupling into a fibre. The whole arrangement is integrated into a 19" compatible housing to enable stand-alone operation by cooling via a compact Stirling cryocooler. The realized source delivers single photons with multiphoton events probability as low as 0.15 and single-photon emission rate up to 73 kHz into a standard telecom single-mode fibre. △ Less

Submitted 21 December, 2019; originally announced December 2019.

Comments: 20 pages, 3 figures

Journal ref: Adv. Quantum Technol. 3, 2000018 (2020)

Deterministically Fabricated Solid-State Quantum-Light Sources

Authors: Sven Rodt, Stephan Reitzenstein, Tobias Heindel

Abstract: This topical review focuses on solid-state quantum-light sources which are fabricated in a deterministic fashion. In this framework we cover quantum emitters represented by semiconductor quantum dots, colour centres in diamond, and defect-/strain-centres in two-dimensional materials. First, we introduce the topic of quantum-light sources and non-classical light generation for applications in photo… ▽ More This topical review focuses on solid-state quantum-light sources which are fabricated in a deterministic fashion. In this framework we cover quantum emitters represented by semiconductor quantum dots, colour centres in diamond, and defect-/strain-centres in two-dimensional materials. First, we introduce the topic of quantum-light sources and non-classical light generation for applications in photonic quantum technologies, motivating the need for the development of scalable device technologies to push the field to real-world applications. In the second part, we summarize material systems hosting quantum emitters in the solid-state. The third part reviews deterministic fabrication techniques and comparatively discusses their advantages and disadvantages. The techniques are classified in bottom-up approaches, exploiting the site-controlled positioning of the quantum emitters themselves, and top-down approaches, allowing for the precise alignment of photonic microstructures to pre-selected quantum emitters. Special emphasis is put on the progress achieved in the development of in-situ techniques, which significantly pushed the performance of quantum-light sources towards applications. Additionally we discuss hybrid approaches, exploiting pick-and-place techniques or wafer-bonding. The fourth part presents state-of-the-art quantum-dot quantum-light sources based on the fabrication techniques presented in the previous sections, which feature engineered functionality and enhanced photon collection efficiency. The article closes by highlighting recent applications of deterministic solid-state-based quantum-light sources in the fields of quantum communication, quantum computing, and quantum metrology, and discussing future perspectives in the field of solid-state quantum-light sources. △ Less

Submitted 6 December, 2019; originally announced December 2019.

Comments: 37 pages, 13 Figures, Topical Review, Note: This is the version of the article before peer review or editing, as submitted by an author to 'Journal of Physics: Condensed Matter'. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-648X/ab5e15

Journal ref: Journal of Physics: Condensed Matter (2019)

Optimized Designs for Telecom-Wavelength Quantum Light Sources Based on Hybrid Circular Bragg Gratings

Authors: Lucas Rickert, Timm Kupko, Sven Rodt, Stephan Reitzenstein, Tobias Heindel

Abstract: We present a design study of quantum light sources based on hybrid circular Bragg Gratings (CBGs) for emission wavelengths in the telecom O-band. The evaluated CBG designs show photon extraction efficiencies > 95% and Purcell factors close to 30. Using simulations based on the finite element method, and considering the influence of possible fabrication imperfections, we identify optimized high-per… ▽ More We present a design study of quantum light sources based on hybrid circular Bragg Gratings (CBGs) for emission wavelengths in the telecom O-band. The evaluated CBG designs show photon extraction efficiencies > 95% and Purcell factors close to 30. Using simulations based on the finite element method, and considering the influence of possible fabrication imperfections, we identify optimized high-performance CBG designs which are robust against structural aberrations. In particular, full 3D simulations reveal that the designs show robustness regarding deviations of the emitter position in the device well within reported positioning accuracies of deterministic fabrication technologies. Furthermore, we investigate the coupling of the evaluated hybrid CBG designs to single-mode optical fibers, which is particularly interesting for the development of practical quantum light sources. We obtain coupling efficiencies of up to 77% for off-the-shelf fibers, and again proof robustness against fabrication imperfections. Our results show prospects for the fabrication of close-to-ideal fiber-coupled quantum light sources for long distance quantum communication. △ Less

Submitted 1 November, 2019; v1 submitted 22 August, 2019; originally announced August 2019.

Comments: 13 pages, 8 figures, including Supplemental Material, added additional simulations in full 3D setting accounting for finite displacement of dipole emitter

Journal ref: Optics Express 27 (25), 36824-36837 (2019)

Interplay between emission wavelength and s-p splitting in MOCVD-grown InGaAs/GaAs quantum dots emitting above 1.3 μm

Authors: Paweł Podemski, Anna Musiał, Krzysztof Gawarecki, Aleksander Maryński, Przemysław Gontar, Artem Bercha, Witold A. Trzeciakowski, Nicole Srocka, Tobias Heuser, David Quandt, André Strittmatter, Sven Rodt, Stephan Reitzenstein, Grzegorz Sęk

Abstract: The electronic structure of strain-engineered single InGaAs/GaAs quantum dots emitting in the telecommunication O band is probed experimentally by photoluminescence excitation spectroscopy. Observed resonances can be attributed to p-shell states of individual quantum dots. The determined energy difference between s-shell and p-shell shows an inverse dependence on the emission energy. The experimen… ▽ More The electronic structure of strain-engineered single InGaAs/GaAs quantum dots emitting in the telecommunication O band is probed experimentally by photoluminescence excitation spectroscopy. Observed resonances can be attributed to p-shell states of individual quantum dots. The determined energy difference between s-shell and p-shell shows an inverse dependence on the emission energy. The experimental data are compared with the results of confined states calculations, where the impact of the size and composition in the investigated structures is simulated within the 8-band $\mathbf{k}\cdot\mathbf{p}$ model. On this basis, the experimental observation is attributed mainly to changes in indium content within individual quantum dots, indicating a way of engineering and selecting a desired quantum dot, whose electronic structure is the most suitable for a given nanophotonic application. △ Less

Submitted 17 January, 2020; v1 submitted 14 August, 2019; originally announced August 2019.

Comments: 15 pages, 3 figures, improved manuscript text and figures

Journal ref: Appl. Phys. Lett. 116, 023102 (2020)

Indistinguishable photons from deterministically integrated single quantum dots in heterogeneous GaAs/Si$_3$N$_4$ quantum photonic circuits

Authors: Peter Schnauber, Anshuman Singh, Johannes Schall, Suk In Park, Jin Dong Song, Sven Rodt, Kartik Srinivasan, Stephan Reitzenstein, Marcelo Davanco

Abstract: Silicon photonics enables scaling of quantum photonic systems by allowing the creation of extensive, low-loss, reconfigurable networks linking various functional on-chip elements. Inclusion of single quantum emitters onto photonic circuits, acting as on-demand sources of indistinguishable photons or single-photon nonlinearities, may enable large-scale chip-based quantum photonic circuits and netwo… ▽ More Silicon photonics enables scaling of quantum photonic systems by allowing the creation of extensive, low-loss, reconfigurable networks linking various functional on-chip elements. Inclusion of single quantum emitters onto photonic circuits, acting as on-demand sources of indistinguishable photons or single-photon nonlinearities, may enable large-scale chip-based quantum photonic circuits and networks. Towards this, we use low-temperature $\textit{in situ}$ electron-beam lithography to deterministically produce hybrid GaAs/Si$_3$N$_4$ photonic devices containing single InAs quantum dots precisely located inside nanophotonic structures, which act as efficient, Si$_3$N$_4$ waveguide-coupled on-chip, on-demand single-photon sources. The precise positioning afforded by our scalable fabrication method furthermore allows observation of post-selected indistinguishable photons. This indicates a promising path towards significant scaling of chip-based quantum photonics, enabled by large fluxes of indistinguishable single-photons produced on-demand, directly on-chip. △ Less

Submitted 28 May, 2019; originally announced May 2019.

Journal ref: Nano Letters, published online (2019)

Non-Markovian features in semiconductor quantum optics: Quantifying the role of phonons in experiment and theory

Authors: Alexander Carmele, Stephan Reitzenstein

Abstract: We discuss phonon-induced non-Markovian and Markovian features in QD-based optics. We cover lineshapes in linear absorption experiments, phonon-induced incoherence in the Heitler regime, and memory correlations in two-photon coherences. To quantitatively and qualitatively understand the underlying physics, we present several theoretical models which model the non-Markovian properties of the electr… ▽ More We discuss phonon-induced non-Markovian and Markovian features in QD-based optics. We cover lineshapes in linear absorption experiments, phonon-induced incoherence in the Heitler regime, and memory correlations in two-photon coherences. To quantitatively and qualitatively understand the underlying physics, we present several theoretical models which model the non-Markovian properties of the electron-phonon interaction accurately in different regimes. Examples are the Heisenberg equation of motion approach, the polaron master equation, and Liouville-propagator techniques in the independent boson limit and beyond via the path-integral method. Phenomenological modeling overestimates typically the dephasing due to the finite memory kernel of phonons and we give instructive examples of phonon-mediated coherence such as phonon-dressed anticrossings in Mollow physics, robust quantum state preparation, cavity-feeding and the stabilization of the collapse and revival phenomenon in the strong coupling limit. △ Less

Submitted 24 April, 2019; originally announced April 2019.

Comments: Accepted version of manuscript

Journal ref: Nanophotonics (2019)

Ground State Resonant Two-Photon Transitions in Wurtzite GaN/AlN Quantum Dots

Authors: Stefan Thomas Jagsch, Ludwig Albrecht Thorsten Greif, Stephan Reitzenstein, Andrei Schliwa

Abstract: Two-photon transition rates are investigated in resonance to the ground state in wurtzite GaN/AlN quantum dots. The ground state transition is two-photon allowed because of the electron-hole separation inherent to polar wurtzite III-nitride heterostructures. We show that this built-in parity breaking mechanism can allow deterministic triggering of single-photon emission via coherent two-photon exc… ▽ More Two-photon transition rates are investigated in resonance to the ground state in wurtzite GaN/AlN quantum dots. The ground state transition is two-photon allowed because of the electron-hole separation inherent to polar wurtzite III-nitride heterostructures. We show that this built-in parity breaking mechanism can allow deterministic triggering of single-photon emission via coherent two-photon excitation. Radiative lifetimes obtained for single-photon relaxation are in good agreement with available time-resolved micro-photoluminescence experiments, indicating the reliability of the employed computational framework based on 8-band k.p-wavefunctions. Two-photon singly-induced emission is explored in terms of possible cavity and non-degeneracy enhancement of two-photon processes. △ Less

Submitted 4 June, 2019; v1 submitted 15 March, 2019; originally announced March 2019.

Journal ref: Phys. Rev. B 99, 245303 (2019)

Directional emission of a deterministically fabricated quantum dot - Bragg reflection multi-mode waveguide system

Authors: Paweł Mrowiński, Peter Schnauber, Philipp Gutsche, Arsenty Kaganskiy, Johannes Schall, Sven Burger, Sven Rodt, Stephan Reitzenstein

Abstract: We report on the experimental study and numerical analysis of chiral light-matter coupling in deterministically fabricated quantum dot (QD) waveguide structures. We apply in-situ electron beam lithography to deterministically integrate single InGaAs/GaAs QDs into GaAs-DBR waveguides to systematically explore the dependence of chiral coupling on the position of the QD inside the waveguide. By a ser… ▽ More We report on the experimental study and numerical analysis of chiral light-matter coupling in deterministically fabricated quantum dot (QD) waveguide structures. We apply in-situ electron beam lithography to deterministically integrate single InGaAs/GaAs QDs into GaAs-DBR waveguides to systematically explore the dependence of chiral coupling on the position of the QD inside the waveguide. By a series of micro-photoluminescence measurements, we determine the directionality contrast of emission into left and right traveling waveguide modes revealing a maximum of 0.93 for highly off-center QDs and an oscillatory dependence of this contrast on the QD position. In numerical simulations we obtain insight into chiral light-matter coupling by computing the light field emitted by a circularly polarized source and its overlap with multiple guided modes of the structure, which enables us to calculate directional $β$-factors for the quantum emitters. The calculated dependence of the directionality on the off-center QD position is in good agreement with the experimental data. It confirms the control of chiral effects in deterministically fabricated QD-waveguide systems with high potential for future non-reciprocal on-chip systems required for quantum information processing. △ Less

Submitted 5 February, 2019; originally announced February 2019.

Comments: 25 pages, 5 figures

Journal ref: ACS Photonics 6, 2231 (2019)

Excitonic complexes in MOCVD-grown InGaAs/GaAs quantum dots emitting at telecom wavelengths

Authors: Paweł Mrowiński, Anna Musiał, Krzysztof Gawarecki, Łukasz Dusanowski, Tobias Heuser, Nicole Srocka, David Quandt, André Strittmatter, Sven Rodt, Stephan Reitzenstein, Grzegorz Sęk

Abstract: Hereby, we present a comprehensive experimental and theoretical study of the electronic structure and optical properties of excitonic complexes in strain-engineered InGaAs/GaAs quantum dots (QDs) grown by metal-organic chemical vapour deposition and emitting at the 1300 nm telecommunication window. Single QD properties have been determined experimentally for a number of nanostructures by means of… ▽ More Hereby, we present a comprehensive experimental and theoretical study of the electronic structure and optical properties of excitonic complexes in strain-engineered InGaAs/GaAs quantum dots (QDs) grown by metal-organic chemical vapour deposition and emitting at the 1300 nm telecommunication window. Single QD properties have been determined experimentally for a number of nanostructures by means of excitation-power-dependent and polarization-resolved microphotoluminescence and further compared with the results of confined states calculations employing the 8-band kp theory combined with the configuration interaction method. The origin of excitonic complexes has been exemplarily confirmed based on magnetooptical and correlation spectroscopy study. Understanding the influence of structural parameters and compositions (of QDs themselves as well as in the neighbouring strain reducing layer) allows to distinguish which of them are crucial to control the emission wavelength to achieve the telecommunication spectral range or to affect binding energies of the fundamental excitonic complexes. The obtained results provide deeper knowledge on control and on limitations of the investigated structures in terms of good spectral isolation of individual optical transitions and the spatial confinement that are crucial in view of QD applications in single-photon sources of high purity at telecom wavelengths. △ Less

Submitted 11 August, 2019; v1 submitted 4 November, 2018; originally announced November 2018.

Journal ref: Phys. Rev. B 100, 115310 (2019)

Mutual coupling and synchronization of optically coupled quantum-dot micropillar lasers at ultra-low light levels

Authors: Sören Kreinberg, Xavier Porte, David Schicke, Benjamin Lingnau, Christian Schneider, Sven Höfling, Kathy Lüdge, Stephan Reitzenstein

Abstract: In this work we explore the limits of synchronization of mutually coupled oscillators at the crossroads of classical and quantum physics. In order to address this uncovered regime of synchronization we apply electrically driven quantum dot micropillar lasers operating in the regime of cavity quantum electrodynamics. These high-$β$ microscale lasers feature cavity enhanced coupling of spontaneous e… ▽ More In this work we explore the limits of synchronization of mutually coupled oscillators at the crossroads of classical and quantum physics. In order to address this uncovered regime of synchronization we apply electrically driven quantum dot micropillar lasers operating in the regime of cavity quantum electrodynamics. These high-$β$ microscale lasers feature cavity enhanced coupling of spontaneous emission and operate at output powers on the order of 100 nW. We selected pairs of micropillar lasers with almost identical optical properties in terms of the input-output dependence and the emission energy which we mutually couple over a distance of about 1m and bring into spectral resonance by precise temperature tuning. By excitation power and detuning dependent studies we unambiguously identify synchronization of two mutually coupled high-$β$ microlasers via frequency locking associated with a sub-GHz locking range. A detailed analysis of the synchronization behavior includes theoretical modeling based on semi-classical stochastic rate equations and reveals striking differences from optical synchronization in the classical domain with negligible spontaneous emission noise and optical powers usually well above the mW range. In particular, we observe deviations from the classically expected locking slope and broadened locking boundaries which are successfully explained by the fact the quantum noise plays an important role in our cavity enhanced optical oscillators. Beyond that, introducing additional self-feedback to the two mutually coupled microlasers allows us to realize zero-lag synchronization. Our work provides important insight into synchronization of optical oscillators at ultra-low light levels and has high potential to pave the way for future experiments in the quantum regime of synchronization. △ Less

Submitted 4 August, 2018; originally announced August 2018.

Comments: 12 pages, 10 figures

Journal ref: Nature Communications 10, 1539 (2019)

A deterministically fabricated spectrally-tunable quantum dot based single-photon source

Authors: S. Fischbach, M. v. Helversen, M. Schmidt, A. Kaganskiy, R. Schmidt, A. Schliwa, T. Heindel, S. Rodt, S. Reitzenstein

Abstract: Spectrally-tunable quantum-light sources are key elements for the realization of long-distance quantum communication. A deterministically fabricated single-photon source with a photon-extraction efficiency of η=(20 +- 2) % and a tuning range of ΔE=2.5 meV is presented here. The device consists of a single pre-selected quantum dot monolithically integrated into a microlens which is bonded onto a pi… ▽ More Spectrally-tunable quantum-light sources are key elements for the realization of long-distance quantum communication. A deterministically fabricated single-photon source with a photon-extraction efficiency of η=(20 +- 2) % and a tuning range of ΔE=2.5 meV is presented here. The device consists of a single pre-selected quantum dot monolithically integrated into a microlens which is bonded onto a piezoelectric actuator via thermocompression goldbonding. The thin gold layer simultaneously acts as a backside mirror for the quantum dot emission, which is efficiently extracted from the device by an optimized lens structure patterned via 3D in-situ electron-beam lithography. The single-photon nature of the emission is proven by photon-autocorrelation measurements with $g^{(2)}$ (τ=0)=0.04 +- 0.02. The combination of deterministic fabrication, spectral-tunability and high broadband photon-extraction efficiency makes the microlens single-photon source an interesting building block towards the realization of quantum repeaters networks. △ Less

Submitted 27 May, 2018; originally announced May 2018.

Comments: 16 pages, 5 figures

Wigner time delay induced by a single quantum dot

Authors: Max Strauß, Alexander Carmele, Marcel Hohn, Julian Schleibner, Christian Schneider, Sven Höfling, Janik Wolters, Stephan Reitzenstein

Abstract: Resonant scattering of weak coherent laser pulses on a single two-level system (TLS) realized in a semiconductor quantum dot is investigated with respect to a time delay between incoming and scattered light. This type of time delay was predicted by Wigner in 1955 for purely coherent scattering and was confirmed for an atomic system in 2013 [R. Bourgain et al., Opt. Lett. 38, 1963 (2013)]. In the p… ▽ More Resonant scattering of weak coherent laser pulses on a single two-level system (TLS) realized in a semiconductor quantum dot is investigated with respect to a time delay between incoming and scattered light. This type of time delay was predicted by Wigner in 1955 for purely coherent scattering and was confirmed for an atomic system in 2013 [R. Bourgain et al., Opt. Lett. 38, 1963 (2013)]. In the presence of electron-phonon interaction we observe deviations from Wigner's theory related to incoherent and strongly non-Markovian scattering processes which are hard to quantify via a detuning-independent pure dephasing time. We observe detuning-dependent Wigner delays of up to 530\,ps in our experiments which are supported quantitatively by microscopic theory allowing for pure dephasing times of up to 950\,ps. △ Less

Submitted 22 February, 2019; v1 submitted 16 May, 2018; originally announced May 2018.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. Lett. 122, 107401 (2019)

Photon number-resolved measurement of an exciton-polariton condensate

Authors: M. Klaas, E. Schlottmann, H. Flayac, F. P. Laussy, F. Gericke, M. Schmidt, M. v. Helversen, J. Beyer, S. Brodbeck, H. Suchomel, S. Höfling, S. Reitzenstein, C. Schneider

Abstract: We measure the full photon-number distribution emitted from a Bose condensate of microcavity exciton-polaritons confined in a micropillar cavity. The statistics are acquired by means of a photonnumber resolving transition edge sensor. We directly observe that the photon-number distribution evolves with the non-resonant optical excitation power from geometric to quasi-Poissonian statistics, which i… ▽ More We measure the full photon-number distribution emitted from a Bose condensate of microcavity exciton-polaritons confined in a micropillar cavity. The statistics are acquired by means of a photonnumber resolving transition edge sensor. We directly observe that the photon-number distribution evolves with the non-resonant optical excitation power from geometric to quasi-Poissonian statistics, which is canonical for a transition from a thermal to a coherent state. Moreover, the photon-number distribution allows evaluating the higher-order photon correlations, shedding further light on the coherence formation and phase transition of the polariton condensate. The experimental data is analyzed in terms of thermal coherent states which allows one to directly extract the thermal and coherent fraction from the measured distributions. These results pave the way for a full understanding of the contribution of interactions in light-matter condensates in the coherence buildup at threshold. △ Less

Submitted 8 May, 2018; originally announced May 2018.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. Lett. 121, 047401 (2018)

Enhanced photon-extraction efficiency from InGaAs/GaAs quantum dots in deterministic photonic structures at 1.3 μm fabricated by in-situ electron-beam lithography

Authors: Nicole Srocka, Anna Musiał, Philipp-Immanuel Schneider, Paweł Mrowiński, Paweł Holewa, Sven Burger, David Quandt, André Strittmatter, Sven Rodt, Stephan Reitzenstein, Grzegorz Sęk

Abstract: The main challenge in the development of non-classical light sources remains their brightness that limits the data transmission and processing rates as well as the realization of practical devices operating in the telecommunication range. To overcome this issue, we propose to utilize universal and flexible in-situ electron-beam lithography and hereby, we demonstrate a successful technology transfe… ▽ More The main challenge in the development of non-classical light sources remains their brightness that limits the data transmission and processing rates as well as the realization of practical devices operating in the telecommunication range. To overcome this issue, we propose to utilize universal and flexible in-situ electron-beam lithography and hereby, we demonstrate a successful technology transfer to telecom wavelengths. As an example, we fabricate and characterize especially designed photonic structures with strain-engineered single InGaAs/GaAs quantum dots that are deterministically integrated into disc-shaped mesas. Utilizing this approach, an extraction efficiency into free-space (within a numerical aperture of 0.4) of (10${\pm}$2) % has been experimentally obtained in the 1.3 μm wavelength range in agreement with finite-element method calculations. △ Less

Submitted 2 May, 2018; originally announced May 2018.

Journal ref: AIP Adv. 8, 085205 (2018)