Showing 1–50 of 62 results for author: Raychaudhuri, A K

Spectroscopic comprehension of Mott-Hubbard insulator to negative charge transfer metal transition in LaNi_{x}V_{1-x}O_{3} thin films

Authors: Anupam Jana, Sophia Sahoo, Sourav Chowdhury, Arup Kumar Mandal, R. J. Choudhary, D. M. Phase, A. K. Raychaudhuri

Abstract: The room temperature (300 K) electronic structure of pulsed laser deposited LaNi_{x}V_{1-x}O_{3} thin films have been demonstrated. The substitution of early-transition metal (TM) V in LaVO_{3} thin films with late-TM Ni leads to the decreasing in out-of-plane lattice parameter. Doping of Ni does not alter the formal valence state of Ni and V in LaNi_{x}V_{1-x}O_{3} thin films, divulging the absen… ▽ More The room temperature (300 K) electronic structure of pulsed laser deposited LaNi_{x}V_{1-x}O_{3} thin films have been demonstrated. The substitution of early-transition metal (TM) V in LaVO_{3} thin films with late-TM Ni leads to the decreasing in out-of-plane lattice parameter. Doping of Ni does not alter the formal valence state of Ni and V in LaNi_{x}V_{1-x}O_{3} thin films, divulging the absence of carrier doping into the system. The valence band spectrum is observed to comprise of incoherent structure owing to the localized V 3d band along with the coherent structure at Fermi level. With increase in Ni concentration, the weight of the coherent feature increases, which divulges its origin to the Ni 3d-O 2p hybridized band. The shift of Ni 3d-O 2p hybridized band towards higher energy in Ni doped LaVO_{3} films compared to the LaNiO_{3} film endorses the modification in ligand to metal charge transfer (CT) energy. The Ni doping in Mott-Hubbard insulator LaVO_{3} leads to the closure of Mott-Hubbard gap by building of spectral weight that provides the delocalized electrons for conduction. A transition from bandwidth control Mott-Hubbard insulator LaVO_{3} to negative CT metallicity character in LaNiO_{3} film is observed. The study reveals that unlike in Mott-Hubbard insulators where the strong Coulomb interaction between the 3d electrons decides the electronic structure of the system, CT energy can deliver an additional degree of freedom to optimize material properties in Ni doped LaVO_{3} films. △ Less

Submitted 11 June, 2021; originally announced June 2021.

Comments: 30 pages, 8 figures

Effective separation of photogenerated electron-hole pairs by radial field facilitates ultrahigh photoresponse in single semiconductor nanowire photodetectors

Authors: Shaili Sett, Arup Kumar Raychaudhuri

Abstract: We report an investigation on the observation of ultrahigh photoresponse (photogain, G_Pc>106) in single nanowire photodetectors of diameter < 100 nm. The investigation which is a combination of experimental observations and a theoretical analysis of the ultrahigh optical response of semiconductor nanowires, has been carried out with emphasis on Ge nanowires. Semiconductor nanowire photodetectors… ▽ More We report an investigation on the observation of ultrahigh photoresponse (photogain, G_Pc>106) in single nanowire photodetectors of diameter < 100 nm. The investigation which is a combination of experimental observations and a theoretical analysis of the ultrahigh optical response of semiconductor nanowires, has been carried out with emphasis on Ge nanowires. Semiconductor nanowire photodetectors show a signature of photogating where G_Pc rolls-off with increasing illumination intensity. We show that surface band bending due to depleted surface layers in nanowires induces a strong radial field (~ 108 V/m at the nanowire surface) which causes physical separation of photogenerated electron-hole pairs. This was established quantitatively through a self-consistent theoretical model based on coupled Schrodinger and Poisson Equations. It shows that carrier separation slows down the surface recombination velocity to a low value (< 1 cm/s) thus reducing the carrier recombination rate and extending the recombination lifetime by few orders of magnitude. An important outcome of the model is the prediction of G_Pc ~ 106 in a single Ge nanowire (with diameter 60 nm), which matches well with our experimental observation. The model also shows an inverse dependence of G_Pc on the diameter that has been observed experimentally. Though carried out in context of Ge nanowires, the physical model developed has general applicability in other semiconductor nanowires as well. △ Less

Submitted 19 October, 2020; originally announced October 2020.

Comments: 26 pages 6 figures supporting data included

Journal ref: Journal of Physical Chemistry C 41, 2020, 22808

Continuous transition from weakly localized regime to strong localization regime in Nd_{0.7}La_{0.3}NiO_{3} films

Authors: Ravindra Singh Bisht, Gopi Nath Daptary, Aveek Bid, A. K. Raychaudhuri

Abstract: We report an investigation of Metal Insulator Transition (MIT) using conductivity and magnetoconductance (MC) measurements down to 0.3 K in Nd_{0.7}La_{0.3}NiO_{3} films grown on crystalline substrates of LaAlO_{3} (LAO), SrTiO_{3} (STO), and NdGaO_{3}(NGO) by pulsed laser deposition. The film grown on LAO experiences a compressive strain and shows metallic behavior with the onset of a weak resist… ▽ More We report an investigation of Metal Insulator Transition (MIT) using conductivity and magnetoconductance (MC) measurements down to 0.3 K in Nd_{0.7}La_{0.3}NiO_{3} films grown on crystalline substrates of LaAlO_{3} (LAO), SrTiO_{3} (STO), and NdGaO_{3}(NGO) by pulsed laser deposition. The film grown on LAO experiences a compressive strain and shows metallic behavior with the onset of a weak resistivity upturn below 2 K which is linked to the onset of weak localization contribution. Films grown on STO and NGO show a crossover from a Positive Temperature Coefficient (PTC) resistance regime to Negative Temperature Coefficient (NTC) resistance regime at definite temperatures. We establish that a cross-over from PTC to NTC on cooling does not necessarily constitute a MIT because the extrapolated conductivity at zero temperature σ_{0} though small (<10 S/cm) is finite, signalling the existence of a bad metallic state and absence of an activated transport. The value of σ_{0} for films grown on NGO is reduced by a factor of 40 compared to that for films grown on STO. We show that a combination of certain physical factors makes substituted nickelate (that are known to exhibit first order Mott type transition), undergo a continuous transition as seen in systems undergoing disorder/composition driven Anderson transition. The MC measurement also support the above observation and show that at low temperature there exists a positive MC that arises from the quantum interference which co-exists with a spin-related negative MC that becomes progressively stronger as the electrons approach a strongly localized state in the film grown on NGO. △ Less

Submitted 24 July, 2020; originally announced July 2020.

Comments: 24 pages

Journal ref: J. Phys.: Condens. Matter 31 (2019) 145603

Observation of decoupling of electrons from phonon bath close to a correlation driven metal-insulator transition

Authors: Sudipta Chatterjee, Ravindra Singh Bisht, V. R. Reddy, A. K. Raychaudhuri

Abstract: We observed that close to a Mott transition, over a small temperature range, the predominance of slow relaxations leads to decoupling of electrons from the thermal bath. This has been established by observation of large deviation of the thermal noise in the films of Mott system $NdNiO_{3}$ from the canonical Johnson-Nyquist value of $4k_{B}TR$ close to the transition. It is suggested that such a l… ▽ More We observed that close to a Mott transition, over a small temperature range, the predominance of slow relaxations leads to decoupling of electrons from the thermal bath. This has been established by observation of large deviation of the thermal noise in the films of Mott system $NdNiO_{3}$ from the canonical Johnson-Nyquist value of $4k_{B}TR$ close to the transition. It is suggested that such a large noise arise from small isolated pockets of nanometric metallic phases (estimated size $\sim$ 15-20 nm) within the insulating phase with the charging energy as the control parameter. △ Less

Submitted 5 November, 2020; v1 submitted 14 July, 2020; originally announced July 2020.

Comments: 27 pages with Supplementary, In revised version discussion updated, New references

Fabrication of Germanium-on-insulator in a Ge wafer with a crystalline Ge top layer and buried GeO2 layer by Oxygen ion implantation

Authors: Vishal Kumar Aggarwal, Ankita Ghatak, Dinakar Kanjilal, Debdulal Kabiraj, Achintya Singha, Sandip Bysakh, Samar Kumar Medda, Supriya Chakraborty, A. K. Raychaudhuri

Abstract: The paper reports fabrication of Germanium-on-Insulator (GeOI) wafer by Oxygen ion implantation of an undoped single crystalline Ge wafer of orientation (100). Oxygen ions of energy 200 keV were implanted. The implanted wafer was subjected to Rapid Thermal Annealing to 650 C. The resulting wafer has a top crystalline Ge layer of 220 nm thickness and Buried Oxide layer (BOX) layer of good quality c… ▽ More The paper reports fabrication of Germanium-on-Insulator (GeOI) wafer by Oxygen ion implantation of an undoped single crystalline Ge wafer of orientation (100). Oxygen ions of energy 200 keV were implanted. The implanted wafer was subjected to Rapid Thermal Annealing to 650 C. The resulting wafer has a top crystalline Ge layer of 220 nm thickness and Buried Oxide layer (BOX) layer of good quality crystalline Germanium oxide with thickness around 0.62 micron. The crystalline BOX layer has hexagonal crystal structure with lattice constants close to the standard values. Raman Spectroscopy, cross-sectional HRTEM with SAED and EDS established that the top Ge layer was recrystallized during annealing with faceted crystallites. The top layer has a small tensile strain of around +0.4\% and has estimated dislocation density of 2.7 x 10^{7}cm^{-2}. The thickness, crystallinity and electrical characteristics of the top layer and the quality of the BOX layer of GeO_{2} are such that it can be utilized for device fabrication. △ Less

Submitted 11 July, 2020; originally announced July 2020.

Journal ref: Materials Science & Engineering B 260 (2020) 114616

Enhanced broad band photoresponse of a partially suspended horizontal array of Silicon microlines fabricated on Silicon-On-Insulator wafers

Authors: Shaili Sett, Vishal Kumar Aggarwal, Achintya Singha, Sandip Bysakh, A. K. Raychaudhuri

Abstract: We report a high Responsivity broad band photo-detector working in the wavelength range 400 nm to 1100 nm in a horizontal array of Si microlines (line width ~1 micron) fabricated on a Silicon-on-Insulator (SOI) wafer. The array was made using a combination of plasma etching, wet etching and electron beam lithography. It forms a partially suspended (nearly free) Silicon microstructure on SOI. The a… ▽ More We report a high Responsivity broad band photo-detector working in the wavelength range 400 nm to 1100 nm in a horizontal array of Si microlines (line width ~1 micron) fabricated on a Silicon-on-Insulator (SOI) wafer. The array was made using a combination of plasma etching, wet etching and electron beam lithography. It forms a partially suspended (nearly free) Silicon microstructure on SOI. The array detector under full illumination of the device shows a peak Responsivity of 18 A/W at 800 nm, at a bias of 1V which is more than an order of magnitude of the Responsivity in a commercial Si detector. In a broad band of 400 nm to 1000 nm the Responsivity of the detector is in excess of 10A/W. We found that the suspension of the microlines in the array is necessary to obtain such high Responsivity. The suspension isolates the microlines from the bulk of the wafer and inhibits carrier recombination by the underlying oxide layer leading to enhanced photo-response. This has been validated through simulation. By using focused illumination of selected parts of a single microline of the array, we could isolate the contributions of the different parts of the microline to the photo-current. △ Less

Submitted 11 July, 2020; originally announced July 2020.

Journal ref: Semicond. Sci. Technol. 35 (2020) 025020

First principles study of bimetallic Ni$_{13-n}$Ag$_n$ nano-clusters ($n =$ 0$-$13) : Structural, mixing, electronic and magnetic properties

Authors: Soumendu Datta, A. K. Raychaudhuri, Tanusri Saha-Dasgupta

Abstract: Using spin polarized density functional theory (DFT) based calculations, combined with ab-initio molecular dynamics simulation, we carry out a systematic investigation of the bimetallic Ni$_{13-n}$Ag$_n$ nano clusters, for all compositions. This includes prediction of the geometry, mixing behavior, and electronic properties. Our study reveals a tendency towards formation of a core-shell like struc… ▽ More Using spin polarized density functional theory (DFT) based calculations, combined with ab-initio molecular dynamics simulation, we carry out a systematic investigation of the bimetallic Ni$_{13-n}$Ag$_n$ nano clusters, for all compositions. This includes prediction of the geometry, mixing behavior, and electronic properties. Our study reveals a tendency towards formation of a core-shell like structures, following the rule of putting Ni in high coordination site and Ag in low coordination site. Our calculations predict negative mixing energies for the entire composition range, indicating mixing to be favored for the bimetallic small sized Ni-Ag clusters, irrespective of the compositions. The magic composition with the highest stability is found for the NiAg$_{12}$ alloy cluster. We investigate the microscopic origin of core-shell like structure with negative mixing energy, in which the Ni-Ag inter-facial interaction is found to play role. We also study the magnetic properties of the Ni-Ag alloy clusters. The Ni dominated magnetism, consists of parallel alignment of Ni moments while the tiny moments on Ag align in anti-parallel to Ni moments. The hybridization with Ag environment causes reduction of Ni moment. △ Less

Submitted 3 May, 2017; originally announced May 2017.

Journal ref: J. Chem. Phys. vol. 146, page 164301 (2017)

Electrical and magnetic transport study on strain driven ferromagnetic insulating thin film of low doped manganite

Authors: Rajib Nath, Sudeshna Samanta, A. K. Raychaudhuri

Abstract: In this paper we have created a strain driven single crystal like ferromagnetic insulating (FMI) state in a PLD grown thin film of low doped LCMO(X = 0.15)on NGO(100) substrate and make a thorough study of strain effects on the electric and magnetic transport of this film. We have studied and compared the FMI state, ferromagnetic transition temperature (TC), ferromagnetic insulating temperature (T… ▽ More In this paper we have created a strain driven single crystal like ferromagnetic insulating (FMI) state in a PLD grown thin film of low doped LCMO(X = 0.15)on NGO(100) substrate and make a thorough study of strain effects on the electric and magnetic transport of this film. We have studied and compared the FMI state, ferromagnetic transition temperature (TC), ferromagnetic insulating temperature (TFMI) and the resistivity of the film in details with bulk single crystals of X=0.18 to 0.22 doping region. We have found that TFMI and the localisation length of the carriers are increased and there is also a decrease in the Coulomb gap. The magneto transport behavior of the film also differs from the bulk single crystals and the magnetoresistance of the sample is nearly 20 to 75% with the application of the applied field(0 to 10 T) and it falls up to 5 to 40% below a certain temperature and the TC of the film increases to higher temperature with the increasing field. The film also shows anisotropic magnetoresistance as large as 20% depending on applied magnetic field direction. △ Less

Submitted 31 December, 2012; originally announced December 2012.

Electric field driven destabilization of the insulating state in nominally pure LaMnO3

Authors: Rajib Nath, A. K. Raychaudhuri, Ya. M. Mukovskii, Parthasarathi Mondal, Dipten Bhattacharya, P. Mandal

Abstract: We report an electric field driven destabilization of the insulating state in nominally pure LaMnO3 single crystal with a moderate field which leads to a resistive state transition below 300 K. The transition is between the insulating state in LaMnO3 and a high resistance bad metallic state that has a temperature independent resistivity. The transition occurs at a threshold field (Eth) which shows… ▽ More We report an electric field driven destabilization of the insulating state in nominally pure LaMnO3 single crystal with a moderate field which leads to a resistive state transition below 300 K. The transition is between the insulating state in LaMnO3 and a high resistance bad metallic state that has a temperature independent resistivity. The transition occurs at a threshold field (Eth) which shows a steep enhancement on cooling. While at lower temperatures the transition is sharp and involves large change in resistance but it softens on heating and eventually absent above 280K. When the Mn4+ content is increased by Sr substitution up to x=0.1, the observed transition though observable in certain temperature range, softens considerably. The observation has been explained as bias driven percolation type transition between two coexisting phases, where the majority phase is a charge and orbitally ordered polaronic insulating phase and the minority phase is a bad metallic phase. The mobile fraction f of the bad metallic phase deduced from the experimental data follows an activated kinetics with the activation energy nearly equal to 200 meV and the prefactor fo is a strong function of the field that leads to a rapid enhancement of f on application of field leading to the resistive state transition. We suggest likely scenarios for such co-existing phases in nominally pure LaMnO3 that can lead to the bias driven percolation type transition. △ Less

Submitted 4 March, 2013; v1 submitted 5 December, 2012; originally announced December 2012.

Comments: Accepted in JPCM

Large photoresponse of Cu:TCNQ nanowire arrays formed as aligned nanobridges

Authors: Rabaya Basori, K. Das, Prashant Kumar, K. S. Narayan, A. K. Raychaudhuri

Abstract: We report for the first time a large photoresponse in an array of charge transfer complex Cu:TCNQ nanowires (average diameter 30 nm) fabricated as a nanobridge device. The device shows highest photoresponse for excitation with 405 nm light which matches with its absorption peak. The current gain at zero bias can reach ~104 with an illumination power density of 2x106 W/m2. The zero bias responsivit… ▽ More We report for the first time a large photoresponse in an array of charge transfer complex Cu:TCNQ nanowires (average diameter 30 nm) fabricated as a nanobridge device. The device shows highest photoresponse for excitation with 405 nm light which matches with its absorption peak. The current gain at zero bias can reach ~104 with an illumination power density of 2x106 W/m2. The zero bias responsivity is ~0.3 mA/W which increases on applying bias reaching 1.0 A/W or more for a bias of 2.0 Volt. Dark and illuminated I-V data are analyzed by two back-to-back Schottky diodes model, which shows the predominant photocurrent in the device arising from the photoconductive response of the nanowires. △ Less

Submitted 22 October, 2012; originally announced October 2012.

Comments: 4 figures

Observation of a Large Photo-response in a Single Nanowire (Diameter ~30 nm) of Charge Transfer Complex Cu:TCNQ

Authors: Rabaya Basori, Kaustuv Das, T. Phanindra. Sai, Prashant Kumar, K. S. Narayan, Arup K. Raychaudhuri

Abstract: We report for the first time large photoresponse in a single NW of the charge transfer complex Cu:TCNQ. We fabricate a metal-semiconductor-metal device with a single NW and focus ion beam deposited Pt. We observe large photocurrent even at zero bias. The spectral dependence of the photoresponse follows the main absorption at ~ 405 nm which has the primarily responsible for photogenerated carriers.… ▽ More We report for the first time large photoresponse in a single NW of the charge transfer complex Cu:TCNQ. We fabricate a metal-semiconductor-metal device with a single NW and focus ion beam deposited Pt. We observe large photocurrent even at zero bias. The spectral dependence of the photoresponse follows the main absorption at ~ 405 nm which has the primarily responsible for photogenerated carriers. We have quantitatively analyzed the bias dependent photocurrent by a model of two back to back Schottky diodes connected by a series resistance. The observation shows that the large photoresponse of the device primarily occurs due to the reduction of the barrier at the contact regions due to illumination along with the photoconductive contribution. There is also a bias driven reduction of the nanowire resistance that is a unique feature for the material. △ Less

Submitted 18 October, 2012; originally announced October 2012.

Comments: 24 pages, 5 figures

Electrical transport properties of nanostructured ferromagnetic perovskite oxides La_0.67Ca_0.33MnO_3 and La_0.5Sr_0.5CoO_3 at low temperatures (5 K > T >0.3 K) and high magnetic field

Authors: Tapati Sarkar, M. Venkata Kamalakar, A. K. Raychaudhuri

Abstract: We report a comprehensive study of the electrical and magneto-transport properties of nanocrystals of La_0.67Ca_0.33MnO_3 (LCMO) (with size down to 15 nm) and La_0.5Sr_0.5CoO_3 (LSCO) (with size down to 35 nm) in the temperature range 0.3 K to 5 K and magnetic fields upto 14 T. The transport, magnetotransport and non-linear conduction (I-V curves) were analysed using the concept of Spin Polarized… ▽ More We report a comprehensive study of the electrical and magneto-transport properties of nanocrystals of La_0.67Ca_0.33MnO_3 (LCMO) (with size down to 15 nm) and La_0.5Sr_0.5CoO_3 (LSCO) (with size down to 35 nm) in the temperature range 0.3 K to 5 K and magnetic fields upto 14 T. The transport, magnetotransport and non-linear conduction (I-V curves) were analysed using the concept of Spin Polarized Tunnelling in the presence of Coulomb blockade. The activation energy of transport, Δ, was used to estimate the tunnelling distances and the inverse decay length of the tunnelling wave function (χ) and the height of the tunnelling barrier (Φ_B). The magnetotransport data were used to find out the magnetic field dependences of these tunnelling parameters. The data taken over a large magnetic field range allowed us to separate out the MR contributions at low temperatures arising from tunnelling into two distinct contributions. In LCMO, at low magnetic field, the transport and the MR are dominated by the spin polarization, while at higher magnetic field the MR arises from the lowering of the tunnel barrier by the magnetic field leading to an MR that does not saturate even at 14 T. In contrast, in LSCO, which does not have substantial spin polarization, the first contribution at low field is absent, while the second contribution related to the barrier height persists. The idea of inter-grain tunnelling has been validated by direct measurements of the non-linear I-V data in this temperature range and the I-V data was found to be strongly dependent on magnetic field. We made the important observation that a gap like feature (with magnitude ~ E_C, the Coulomb charging energy) shows up in the conductance g(V) at low bias for the systems with smallest nanocrystal size at lowest temperatures (T < 0.7 K). The gap closes as the magnetic field and the temperature are increased. △ Less

Submitted 17 March, 2012; originally announced March 2012.

Comments: 13 figures

Journal ref: New Journal of Physics, Vol. 14, Pg. 033026 (2012)

Probing defects in chemically synthesized ZnO nanostrucures by Positron Annihilation and Photoluminescence Spectroscopy

Authors: S K Chaudhuri, Manoranjan Ghosh, D Das, A K Raychaudhuri

Abstract: The present article describes the size induced changes in the structural arrangement of intrinsic defects present in chemically synthesized ZnO nanoparticles of various sizes. Routine X-ray diffraction (XRD) and Transmission Electron Microscopy (TEM) have been performed to determine the shapes and sizes of the nanocrystalline ZnO samples. Detailed studies using positron annihilation spectroscopy r… ▽ More The present article describes the size induced changes in the structural arrangement of intrinsic defects present in chemically synthesized ZnO nanoparticles of various sizes. Routine X-ray diffraction (XRD) and Transmission Electron Microscopy (TEM) have been performed to determine the shapes and sizes of the nanocrystalline ZnO samples. Detailed studies using positron annihilation spectroscopy reveals the presence of zinc vacancy. Whereas analysis of photoluminescence results predict the signature of charged oxygen vacancies. The size induced changes in positron parameters as well as the photoluminescence properties, has shown contrasting or non-monotonous trends as size varies from 4 nm to 85 nm. Small spherical particles below a critical size (~ 23 nm) receive more positive surface charge due to the higher occupancy of the doubly charge oxygen vacancy as compared to the bigger nanostructures where singly charged oxygen vacancy predominates. This electronic alteration has been seen to trigger yet another interesting phenomenon, described as positron confinement inside nanoparticles. Finally, based on all the results, a model of the structural arrangement of the intrinsic defects in the present samples has been reconciled. △ Less

Submitted 13 September, 2011; originally announced September 2011.

Journal ref: J. Appl. Phys. 108, 064319 (2010)

Electric field induced reversible control of visible photoluminescence from ZnO nanoparticles

Authors: Manoranjan Ghosh, A. K. Raychaudhuri

Abstract: Reversible control of the photoluminescence of ZnO occurring in the visible range, has been achieved by application of a few volts (< 5V) to a device consisting of nanostructured ZnO film sandwiched between Indium Tin Oxide electrode and polyethylene oxide-lithium perchlorate, a solid polymer electrolyte. The photoluminescence intensity shows nearly 100% modulation with a response time less than 3… ▽ More Reversible control of the photoluminescence of ZnO occurring in the visible range, has been achieved by application of a few volts (< 5V) to a device consisting of nanostructured ZnO film sandwiched between Indium Tin Oxide electrode and polyethylene oxide-lithium perchlorate, a solid polymer electrolyte. The photoluminescence intensity shows nearly 100% modulation with a response time less than 30 seconds, when the bias is applied at the electrolyte-electrode. A model is proposed for the observed effect that is based on defect states of ZnO and the band bending at the ZnO-electrolyte interface that can be changed by the applied bias. △ Less

Submitted 13 September, 2011; originally announced September 2011.

Journal ref: Appl. Phys. Lett. 98, 153109 (2011)

Structure and optical properties of Cd substituted ZnO (Zn1-xCdxO) nanostructures synthesized by high pressure solution route

Authors: Manoranjan Ghosh, A. K. Raychaudhuri

Abstract: We report synthesis of Cd substituted ZnO nanostructures (Zn1-xCdxO with x upto \approx .09) by high pressure solution growth method. The synthesized nanostructures comprise of nanocrystals that are both particles (~ 10-15 nm) and rods which grow along (002) direction as established by Transmission electron microscope (TEM) and X-ray diffraction (XRD) analysis. Rietveld analysis of the XRD data sh… ▽ More We report synthesis of Cd substituted ZnO nanostructures (Zn1-xCdxO with x upto \approx .09) by high pressure solution growth method. The synthesized nanostructures comprise of nanocrystals that are both particles (~ 10-15 nm) and rods which grow along (002) direction as established by Transmission electron microscope (TEM) and X-ray diffraction (XRD) analysis. Rietveld analysis of the XRD data shows monotonous increase of the unit cell volume with the increase of Cd concentration. The optical absorption as well as the photoluminescence (PL) shows red shift on Cd substitution. The line width of the PL spectrum is related to the strain inhomogenity and it peaks in the region where the CdO phase separates from the Zn1-xCdxO nanostructures. The time resolved photoemission showed a long lived (~10ns) component. We propose that the PL behavior of the Zn1-xCdxO is dominated by strain in the sample with the redshift of the PL linked to the expansion of the unit cell volume on Cd substitution. △ Less

Submitted 10 September, 2011; originally announced September 2011.

Journal ref: Nanotechnology 18, 115618 (2007)

Phonon dynamics of Zn(Mg,Cd)O alloy nanostructures and their phase segregation

Authors: Manoranjan Ghosh, Nita Dilawar, A. K. Bandyopadhyay, A. K. Raychaudhuri

Abstract: In this paper we report phonon dynamics in chemically synthesized Zn1- xMgxO (0\leqx\leq0.07) and Zn1-yCdyO (0\leqy\leq0.03) alloy nanostructures of sizes ~10 nm using non-resonant Raman and Fourier Transformed Infrared Spectroscopy (FTIR). Substitution by Mg makes the unit cell compact while Cd substitution leads to unit cell expansion. On alloying, both A1(LO) and E1(LO) mode of wurtzite ZnO sho… ▽ More In this paper we report phonon dynamics in chemically synthesized Zn1- xMgxO (0\leqx\leq0.07) and Zn1-yCdyO (0\leqy\leq0.03) alloy nanostructures of sizes ~10 nm using non-resonant Raman and Fourier Transformed Infrared Spectroscopy (FTIR). Substitution by Mg makes the unit cell compact while Cd substitution leads to unit cell expansion. On alloying, both A1(LO) and E1(LO) mode of wurtzite ZnO show blue shift for Zn1-xMgxO and red shift for Zn1-yCdyO alloy nanostructures due to mass defect and volume change induced by the impurity atoms. Significant shift has been observed in E1(LO) mode for Zn1-xMgxO (73 cm-1 for x = 0.07) and Zn1-yCdyO (17 cm-1 for y = 0.03) nanostructures. The variation in Zn(Mg,Cd)-O bond length determined from the blue (red) shift of IR bands on alloying with Mg (Cd) is consistent with their respective ionic sizes and the structural changes predicted by X-ray diffraction study. However, on progressive alloying one can detect phase segregation (due to presence of interstitial Mgand Cd ions) in the alloy nanostructures for relatively higher Mg and Cd concentrations. This is confirmed by the gradual absence of the characteristic IR and Raman bands of wurtzite ZnO near 400-600 cm-1 as well as by X-Ray and TEM studies. △ Less

Submitted 10 September, 2011; originally announced September 2011.

Journal ref: J. Appl. Phys. 106, 084306 (2009)

Structural and Optical properties of Zn(1-x)MgxO nanocrystals obtained by low temperature method

Authors: Manoranjan Ghosh, A. K. Raychaudhuri

Abstract: In this paper we report structural and optical properties of Magnesium substituted Zinc Oxide (Zn1-xMgxO) nanocrystals (~10-12nm) synthesized by low temperature route. In the low temperature synthesis route it was possible to reach x = 0.17 without segregation of Mg rich phase. The exact chemical composition has been established by quantitative analysis. Rietveld analysis of the XRD data confirms… ▽ More In this paper we report structural and optical properties of Magnesium substituted Zinc Oxide (Zn1-xMgxO) nanocrystals (~10-12nm) synthesized by low temperature route. In the low temperature synthesis route it was possible to reach x = 0.17 without segregation of Mg rich phase. The exact chemical composition has been established by quantitative analysis. Rietveld analysis of the XRD data confirms the Wurzite structure and a continuous compaction of the lattice (in particular the c-axis parameter) as x increases. There is an enhancement of the strain in the lattice as the Mg is substituted. The bandgap also gets enhanced as x is increased and reaches a value of 4eV for x = 0.17. From the TEM and the XRD data it has been concluded that when there is a phase segregation for x > 0.17, there is a shell of Mg(OH)2 on the ZnO. The absorption also shows persistence of the excitoinc absorption on Mg substitution. The nanocrystals show near band edge photo luminescence (PL) at room temperature which shows blue shift on Mg incorporation. In addition to the near band edge emission the ZnO and Zn1-xMg xO alloy nanocrystals show considerable emission in the blue-green region at wavelength of ~550 nm. We find that the relative intensity of the green emission increases with the Mg concentration for very low x (upto x = 0.05) and on further increase of the Mg concentration there is a sharp decrease of relative intensity of the green emission eventually leading to a complete quenching of blue emission. It is concluded that due to phase segregation (for x \geq 0.20), the formation of the shell of Mg(OH)2 on the ZnO leads to quenching of the green emission .However, this shell formation does not have much effect on the near band edge PL. △ Less

Submitted 10 September, 2011; originally announced September 2011.

Journal ref: J. Appl. Phys. 100, 034315 (2006)

Non-Gaussian resistance noise in the ferromagnetic insulating state of a hole doped manganite

Authors: Sudeshna Samanta, A. K. Raychaudhuri, Ya. M. Mukhovskii

Abstract: We report the observation of a large 1/f noise in the ferromagnetic insulating state (FMI) of a hole doped manganite single crystal of La0.80Ca0.20MnO3 which manifests hopping conductivity in presence of a Coulomb gap. The temperature dependent noise magnitude shows a deep within the FMI state, there is a sharp freeze out of the noise magnitude with temperature on cooling. As the material enters t… ▽ More We report the observation of a large 1/f noise in the ferromagnetic insulating state (FMI) of a hole doped manganite single crystal of La0.80Ca0.20MnO3 which manifests hopping conductivity in presence of a Coulomb gap. The temperature dependent noise magnitude shows a deep within the FMI state, there is a sharp freeze out of the noise magnitude with temperature on cooling. As the material enters the FMI state, the noise becomes non-Gaussian as seen through probability density function and second spectra. It is proposed to arise from charge fluctuations in a correlated glassy phase of the polaronic carriers which develop in these systems as reported in recent simulation studies. △ Less

Submitted 25 May, 2011; originally announced May 2011.

Voltage bias induced modification of all oxide Pr0.5Ca0.5MnO3/SrTi0.95Nb.05O3 junctions

Authors: Barnali Ghosh, K. Das, A. K. Raychaudhuri

Abstract: In this paper we report what happens to a pristine oxide junction Pr0.5Ca0.5MnO3/SrTi0.95Nb.05O3 (PCMO/Nb:STO), when it is subjected to cycling of voltage bias of moderate value ({\pm}4V). It is found that the initial cycling leads to formation of a permanent state of lower resistance where the lower resistance arises predominantly due to development of a shunt across the device film (PCMO). On su… ▽ More In this paper we report what happens to a pristine oxide junction Pr0.5Ca0.5MnO3/SrTi0.95Nb.05O3 (PCMO/Nb:STO), when it is subjected to cycling of voltage bias of moderate value ({\pm}4V). It is found that the initial cycling leads to formation of a permanent state of lower resistance where the lower resistance arises predominantly due to development of a shunt across the device film (PCMO). On successive voltage cycling with increasing magnitude, this state transforms into states of successive lower resistance that can be transformed back to the initial stable state on cycling to below a certain bias. A simple model based on p-n junction with shunt has been used to obtain information on the change of the junction on voltage cycling. It has been shown that the observation can be explained if the voltage cycling leads to lowering of barrier at the interface and also reduction in series resistance. It is suggested that this lowering can be related to the migration of oxygen ions and vacancies at the junction region. Cross-sectional imaging of the junction shows formation of permanent filamentary bridges across the thickness of the PCMO after the pristine p-n junction is first taken through a voltage cycle, which would explain appearance of a finite shunt across the p-n junction. △ Less

Submitted 4 March, 2011; originally announced March 2011.

Comments: 12 pages,7figures

Effect of size reduction on the ferromagnetism of the manganite La1-xCaxMnO3 (x = 0.33)

Authors: Tapati Sarkar, A. K. Raychaudhuri, A. K. Bera, S. M. Yusuf

Abstract: In this paper we report an investigation on the ferromagnetic state and the nature of ferromagnetic transition of nanoparticles of $\mathrm{La_{0.67}Ca_{0.33}MnO_3}$ using magnetic measurements and neutron diffraction. The investigation was made on nanoparticles with crystal size down to $15$ nm. The neutron data show that even down to a size of $15$ nm the nanoparticles show finite spontaneous ma… ▽ More In this paper we report an investigation on the ferromagnetic state and the nature of ferromagnetic transition of nanoparticles of $\mathrm{La_{0.67}Ca_{0.33}MnO_3}$ using magnetic measurements and neutron diffraction. The investigation was made on nanoparticles with crystal size down to $15$ nm. The neutron data show that even down to a size of $15$ nm the nanoparticles show finite spontaneous magnetization ($M_S$) although the value is much reduced compared to the bulk sample. We observed a non-monotonic variation of the ferromagnetic to paramagnetic transition temperature $T_C$ with size $d$ and found that $T_C$ initially enhances on size reduction, but for $d < 50$ nm it decreases again. The initial enhancement in $T_C$ was related to an increase in the bandwidth that occured due to a compaction of the Mn-O bond length and a straightening of the Mn-O-Mn bond angle, as determined form the neutron data. The size reduction also changes the nature of the ferromagnetic to paramagnetic transition from first order to second order with critical exponents approaching mean field values. This was explained as arising from a truncation of the coherence length by the finite sample size. △ Less

Submitted 3 January, 2011; originally announced January 2011.

Comments: 12 figures

Journal ref: New Journal of Physics, Vol. 12, Pg. 123026 (2010)

Single step precursor free synthesis and characterisation of stable Au nanochains by laser ablation

Authors: Rajesh Kumar Neogy, Rajib Nath, Gautam Basu, A. K. Raychaudhuri

Abstract: In this paper we report a simple one step and one-pot synthesis of stable assembly of Au nanoparticles (diameter 8-10nm) into chains in an Ethylene Glycol medium, using only a solid metallic Au target and a pulsed excimer laser (λ=248nm). The process reported does not use any precursor, reducing agent or surfactant and thus can be described as chemistry free synthesis route. The Au nanoparticle-et… ▽ More In this paper we report a simple one step and one-pot synthesis of stable assembly of Au nanoparticles (diameter 8-10nm) into chains in an Ethylene Glycol medium, using only a solid metallic Au target and a pulsed excimer laser (λ=248nm). The process reported does not use any precursor, reducing agent or surfactant and thus can be described as chemistry free synthesis route. The Au nanoparticle-ethylene glycol nanochains (with unbroken lengths often more than few microns) formed in liquid medium are mechanically as well as thermally stable and can be transferred unchanged into a solid substrate which can span a large surface area. The nanochains show a broad optical absorption covering almost the complete visible spectrum. A hybrid consisting of Au nanochains and separated nanoparticles can be formed by the same method using a proper choice of the laser fluence and Ethylene Glycol /DI water concentration. The Au nanochain - Ethylene Glycol hybrid material formed by the above method shows enhanced low frequency dielectric constant (one order more than the Ethylene Glycol) and enhanced electrical conductivity even with low Au fill fraction can show enhancement up to two orders. Based on 2D-NMR experiments we suggest that the quasi-1D chain like structure forms due to the formation of dimer and trimers of Ethylene Glycol molecules that attach to the Au nanoparticles formed by the ablation process and facilitate the chain formation. △ Less

Submitted 11 October, 2010; originally announced October 2010.

Comments: 20 pages, 7 figures, 2 supplementaries

Resistance fluctuations and 1/f noise in single crystalline Ni nanowires

Authors: Sudeshna Samanta, M. Venkata Kamalakar, A. K. Raychaudhuri

Abstract: We measured the low frequency (10mHz < f < 10Hz) resistance fluctuations (Noise) in single crystalline ferromagnetic Ni nanowires (diameter ~35nm) in the temperature range 80K-300K. The noise spectral power shows 1/f dependence. The nanowires in an applied magnetic field show negative magetoresistance that saturates for H <= HC. The noise spectral power shows a reduction in low applied field and… ▽ More We measured the low frequency (10mHz < f < 10Hz) resistance fluctuations (Noise) in single crystalline ferromagnetic Ni nanowires (diameter ~35nm) in the temperature range 80K-300K. The noise spectral power shows 1/f dependence. The nanowires in an applied magnetic field show negative magetoresistance that saturates for H <= HC. The noise spectral power shows a reduction in low applied field and becomes field independent for H >= HC. This indicates that a part of the observed 1/f noise arises from magnetic origin. The magnetic part is associated with thermally activated domain wall fluctuations that couples to the resistance fluctuations. △ Less

Submitted 23 June, 2009; originally announced June 2009.

Temperature dependent electrical resistivity of a single strand of ferromagnetic single crystalline nanowire

Authors: M. Venkata Kamalakar, A. K. Raychaudhuri, Xueyong Wei, Jason Teng, Philip D. Prewett

Abstract: We have measured the electrical resistivity of a single strand of a ferromagnetic Ni nanowire of diameter 55 nm using a 4-probe method in the temperature range 3 K-300 K. The wire used is chemically pure and is a high quality oriented single crystalline sample in which the temperature independent residual resistivity is determined predominantly by surface scattering. Precise evaluation of the te… ▽ More We have measured the electrical resistivity of a single strand of a ferromagnetic Ni nanowire of diameter 55 nm using a 4-probe method in the temperature range 3 K-300 K. The wire used is chemically pure and is a high quality oriented single crystalline sample in which the temperature independent residual resistivity is determined predominantly by surface scattering. Precise evaluation of the temperature dependent resistivity ($ρ$) allowed us to identify quantitatively the electron-phonon contribution (characterized by a Debye temperature $θ_R$) as well as the spin-wave contribution which is significantly suppressed upon size reduction. △ Less

Submitted 21 June, 2009; originally announced June 2009.

Field induced reversible control of visible luminescence in ZnO nanostructures

Authors: Manoranjan Ghosh, A. K. Raychaudhuri

Abstract: In this work, a reversible control over the visible luminescence of phosphor ZnO is achieved by the application of a few volts (<5V) to nanostructured ZnO film sandwiched between ITO and LiClO4/PEO solid electrolyte. Since ZnO is a good absorbing material but ITO-Glass substrate is transparent in the range of 320-375 nm, the ZnO-ITO interface has been illuminated by a 345 nm light passing throug… ▽ More In this work, a reversible control over the visible luminescence of phosphor ZnO is achieved by the application of a few volts (<5V) to nanostructured ZnO film sandwiched between ITO and LiClO4/PEO solid electrolyte. Since ZnO is a good absorbing material but ITO-Glass substrate is transparent in the range of 320-375 nm, the ZnO-ITO interface has been illuminated by a 345 nm light passing through the ITO glass substrate and the emitted light near 545 nm has been collected in reflection mode. When the solid polymer electrolyte is negatively biased, up to 107 percent enhancement in the visible luminescence has been observed, whereas a complete quenching (87 percent reduction) of the visible emission has been seen when it is positively biased. The sharp near band edge (NBE) emission in the ultraviolet region however has no dependence within the voltage range we are working. The luminescence output follows variations in the applied voltage up to maximum frequency limited by response time of the device which lies within the range of 20-30 sec. The upward band bending created by application of negative bias to the conductive polymer populates increasing number of defect levels above the Fermi level which enhances the visible photoluminescence and vice versa. △ Less

Submitted 22 March, 2009; originally announced March 2009.

Comments: 8 pages 8 figures

Frequency dependence of dielectric anomaly around Neel temperature in bilayer manganite Pr(Sr0.1Ca0.9)2Mn2O7

Authors: Barnali Ghosh, Dipten Bhattacharya, A. K. Raychaudhuri, S. Arumugam

Abstract: A novel frequency dependence of anomaly in dielectric constant versus temperature plot, around the Neel temperature T_N (~150 K), has been observed in a single crystal of bilayer manganite Pr(Sr0.1Ca0.9)2Mn2O7. The anomaly in the permittivity (epsilon'||c) occurs at a temperature T_f which moves within a temperature window (delT_f) of ~40 K around T_N for a frequency range 50 kHz-5 MHz. The capa… ▽ More A novel frequency dependence of anomaly in dielectric constant versus temperature plot, around the Neel temperature T_N (~150 K), has been observed in a single crystal of bilayer manganite Pr(Sr0.1Ca0.9)2Mn2O7. The anomaly in the permittivity (epsilon'||c) occurs at a temperature T_f which moves within a temperature window (delT_f) of ~40 K around T_N for a frequency range 50 kHz-5 MHz. The capacitive component Cp of the dielectric response exhibits a clear yet broad feature around T_N which establishes the intrinsic capacitive nature of the anomaly. △ Less

Submitted 27 February, 2009; originally announced February 2009.

Comments: 15 pages with 4 figures; pdf only

Journal ref: J. Appl. Phys. 105, 123914 (2009)

Electrical resistance of Ni nanowires (diameter greater than or equal to 20 nm) near the Curie Temperatures

Authors: M. Venkata Kamalakar, A. K. Raychaudhuri

Abstract: In this letter we report electrical transport measurements on nickel nanowires of diameters down to 20 nm in the region close to its paramagnetic-ferromagnetic transition temperature T_C (reduced temperature|t| less than or equal to 0.001). The data analysis done in the frame work of critical behavior of resistance near TC shows that the critical behavior persists even down to the lowest diamete… ▽ More In this letter we report electrical transport measurements on nickel nanowires of diameters down to 20 nm in the region close to its paramagnetic-ferromagnetic transition temperature T_C (reduced temperature|t| less than or equal to 0.001). The data analysis done in the frame work of critical behavior of resistance near TC shows that the critical behavior persists even down to the lowest diameter wire of 20 nm. However, there is a suppression of the critical behavior of the resistivity as measured by the critical exponents and the parameters quantifying the anomaly. The spin system shows approach to a quasi one-dimensional spin system. △ Less

Submitted 27 November, 2008; originally announced November 2008.

Comments: 5 pages, 4 figures

Effect of intrinsic instability of cantilevers on static mode Atomic Force Spectroscopy

Authors: Soma Das, P. A. Sreeram, A. K. Raychaudhuri

Abstract: We show that the static force spectroscopy curve is significantly modified due to presence of intrinsic cantilever instability. This instability acts in tandem with such instabilities like water bridge or molecular bond rupture and makes the static force spectroscopy curve (including "jump-off-contact") dependent on the step-size of the movement of sample stage. A model has been proposed to expl… ▽ More We show that the static force spectroscopy curve is significantly modified due to presence of intrinsic cantilever instability. This instability acts in tandem with such instabilities like water bridge or molecular bond rupture and makes the static force spectroscopy curve (including "jump-off-contact") dependent on the step-size of the movement of sample stage. A model has been proposed to explain the data. This has been further validated by applying an electric field between tip and substrate which modifies the tip-substrate interaction. △ Less

Submitted 18 October, 2008; originally announced October 2008.

Comments: 5 pages, 5 figures

A method to quantitatively evaluate Hamaker constant using the jump-into-contact effect in Atomic Force microscopy

Authors: Soma Das, P. A. Sreeram, A. K. Raychaudhuri

Abstract: We find that the jump-into-contact of the cantilever in the atomic force microscope (AFM) is caused by an inherent instability in the motion of the AFM cantilever. The analysis is based on a simple model of the cantilever moving in a nonlinear force field. We show that the jump-into-contact distance can be used to find the interaction of the cantilever tip with the surface. In the specific conte… ▽ More We find that the jump-into-contact of the cantilever in the atomic force microscope (AFM) is caused by an inherent instability in the motion of the AFM cantilever. The analysis is based on a simple model of the cantilever moving in a nonlinear force field. We show that the jump-into-contact distance can be used to find the interaction of the cantilever tip with the surface. In the specific context of the attractive van der Waals interaction, this method can be realized as a new method of measuring the Hamaker constant for materials. The Hamaker constant is determined from the deflection of the cantilever at the jump-into-contact using the force constant of the cantilever and the tip radius of curvature, all of which can be obtained by measurements. The results have been verified experimentally on a sample of cleaved mica, a sample of Si wafer with natural oxide and a silver film, using a number of cantilevers with different spring constants. We emphasize that the method described here is applicable only to surfaces that have van der Waals interaction as the tip-sample interaction. We also find that the tip to sample separation at the jump-into-contact is simply related to the cantilever deflection at this point, and this provides a method to exactly locate the surface. △ Less

Submitted 17 October, 2008; originally announced October 2008.

Comments: 11 pages, 4 figures, 1 table

Journal ref: Nanotechnology 18 (2007) 035501

Ionic environment control of visible photo-luminescence from ZnO nanoparticles

Authors: Manoranjan Ghosh, A. K. Raychaudhuri

Abstract: We report a novel effect that the visible photoluminescence (in the blue-green band) from ZnO anoparticles can be controlled by changing the ionic or polar nature of the medium in which the nanoparticles are dispersed. We find that the presence of sufficient amount of electrolytes can even quench the emission. We propose an explanation based on surface charge of the ZnO nanoparticles which contr… ▽ More We report a novel effect that the visible photoluminescence (in the blue-green band) from ZnO anoparticles can be controlled by changing the ionic or polar nature of the medium in which the nanoparticles are dispersed. We find that the presence of sufficient amount of electrolytes can even quench the emission. We propose an explanation based on surface charge of the ZnO nanoparticles which control the band bending in the depletion layer at the surface of the anoparticles. The band bending in turn, decides the predominant nature of the visible emission. The explanation is validated by establishing a direct correlation between the visible emission and the zeta potential. △ Less

Submitted 10 July, 2008; originally announced July 2008.

Comments: 3 pages including 4 figures

Shape transition in ZnO nanostructures and its effect on blue-green photoluminescence

Authors: Manoranjan Ghosh, A. K. Raychaudhuri

Abstract: We report that ZnO nanostructures synthesized by chemical route undergo a shape transition at ~ 20 nm from spherical to hexagonal morphology thereby changing the spectral components of the blue-green emission. Spherically shaped nanocrystals (size range 11 -18 nm) show emission in the range of 555-564 nm and the emission shifts to the longer wavelength as the size increases. On the other hand, r… ▽ More We report that ZnO nanostructures synthesized by chemical route undergo a shape transition at ~ 20 nm from spherical to hexagonal morphology thereby changing the spectral components of the blue-green emission. Spherically shaped nanocrystals (size range 11 -18 nm) show emission in the range of 555-564 nm and the emission shifts to the longer wavelength as the size increases. On the other hand, rods and hexagonal platelets (size range 20-85 nm), which is the equilibrium morphology after the shape transition, show emission near 465-500 nm and it shifts to shorter wavelength as the size increases. The shape transition also leads to relaxation of microstrain in the system. Our analysis shows that the visible emission originates from a defect layer on the nanostructure surface which is affected by the shape transition. The change in the spectral component of the blue green emission on change of shape has been explained as arising from band bending due to depletion layer in smaller spherical particles which is absent in the larger particles with flat faces. △ Less

Submitted 9 July, 2008; originally announced July 2008.

Comments: 8 pages, 8 figures

Hot electron effects and non-linear transport in hole doped manganites

Authors: Himanshu Jain, A. K. Raychaudhuri

Abstract: We show that strong non--linear electron transport in the ferromagnetic insulating (FMI) state of manganites, responsible for phenomena such as colossal electroresistance and current induced resistance switching, can occur due to a hot electron effect. In the FMI state, which we show is an insulator with a Coulomb gap, the temperature of the electron and lattice baths can decouple at high input… ▽ More We show that strong non--linear electron transport in the ferromagnetic insulating (FMI) state of manganites, responsible for phenomena such as colossal electroresistance and current induced resistance switching, can occur due to a hot electron effect. In the FMI state, which we show is an insulator with a Coulomb gap, the temperature of the electron and lattice baths can decouple at high input power levels, leading to heating of the electron bath. Parameters of the hot electron effect model were independently determined via time dependence experiments and are in good agreement with the experimental values. △ Less

Submitted 29 April, 2008; originally announced April 2008.

Comments: Preprint generated using RevTeX4. 3 Figures

Size induced change-over from first to second order magnetic phase transition in La0.67Ca0.33MnO3 nanoparticles

Authors: Tapati Sarkar, A. K. Raychaudhuri

Abstract: In this report we show that in the perovskite manganite La_{1-x}Ca_{x}MnO_3 for a fixed x \approx 0.33, the magnetic transition changes over from first order to second order on reducing the particle size to nearly few tens of a nanometer. The change-over is brought about only by reducing the size and with no change in the stoichiometry. The size reduction to an average size of about 15 nm retain… ▽ More In this report we show that in the perovskite manganite La_{1-x}Ca_{x}MnO_3 for a fixed x \approx 0.33, the magnetic transition changes over from first order to second order on reducing the particle size to nearly few tens of a nanometer. The change-over is brought about only by reducing the size and with no change in the stoichiometry. The size reduction to an average size of about 15 nm retains the ferromagnetic state albeit with somewhat smaller saturation magnetization and the ferromagnetic transition temperature T_{C} is suppressed by a small amount (4%). The magnetization of the nanoparticles near T_{C} follow the scaling equation $M/|ε|^β= f_\pm(H/|ε|^{γ+β})$, where, $ε= |T-T_C|/T_C$. The critical exponents, associated with the transition have been obtained from modified Arrott plots and they are found to be $β=0.47\pm 0.01$ and $γ=1.06\pm 0.03$. From a plot of M vs H at T_{C} we find the exponent $δ=3.10 \pm 0.13$. All the exponents are close to the mean field values. The change-over of the order of the transition has been attributed to a lowering of the value of the derivative dT_{C}/dP due to an increased pressure in the nanoparticles arising due to size reduction. This effect acts in tandem with the rounding off effect due to random strain in the nanoparticles. △ Less

Submitted 23 April, 2008; originally announced April 2008.

Comments: 6 pages, 6 figures

Crystal structure and physical properties of half-doped manganite nanocrystals with size < 100nm

Authors: Tapati Sarkar, Barnali Ghosh, A. K. Raychaudhuri, Tapan Chatterji

Abstract: In this paper we report the structural and property (magnetic and electrical transport) measurements of nanocrystals of half-doped $\mathrm{La_{0.5}Ca_{0.5}MnO_3}$(LCMO) synthesized by chemical route, having particle size down to an average diameter of 15nm. It was observed that the size reduction leads to change in crystal structure and the room temperature structure is arrested so that the str… ▽ More In this paper we report the structural and property (magnetic and electrical transport) measurements of nanocrystals of half-doped $\mathrm{La_{0.5}Ca_{0.5}MnO_3}$(LCMO) synthesized by chemical route, having particle size down to an average diameter of 15nm. It was observed that the size reduction leads to change in crystal structure and the room temperature structure is arrested so that the structure does not evolve on cooling unlike bulk samples. The structural change mainly affects the orthorhombic distortion of the lattice. By making comparison with observed crystal structure data under hydrostatic pressure it is suggested that the change in the crystal structure of the nanocrystals occurs due to an effective hydrostatic pressure created by the surface pressure on size reduction. This not only changes the structure but also causes the room temperature structure to freeze-in. The size reduction also does not allow the long supercell modulation needed for the Charge Ordering, characteristic of this half-doped manganite, to set-in. The magnetic and transport measurements also show that the Charge Ordering (CO) does not occur when the size is reduced below a critical size. Instead, the nanocrystals show ferromagnetic ordering down to the lowest temperatures along with metallic type conductivity. Our investigation establishes a structural basis for the destabilization of CO state observed in half-doped manganite nanocrystals. △ Less

Submitted 22 April, 2008; originally announced April 2008.

Comments: 11 pages, 13 Figures

Localized reversible nanoscale phase separation in Pr_0.63Ca_0.37MnO_3 single crystal using a scanning tunneling microscope tip

Authors: Sohini Kar, A. K. Raychaudhuri

Abstract: We report the destabilization of the charge ordered insulating (COI) state in a localized region of Pr_0.63Ca_0.37MnO_3 single crystal by current injection using a scanning tunneling microscope tip. This leads to controlled phase separation and formation of localized metallic nanoislands in the COI matrix which have been detected by local tunneling conductance mapping. The metallic regions thus… ▽ More We report the destabilization of the charge ordered insulating (COI) state in a localized region of Pr_0.63Ca_0.37MnO_3 single crystal by current injection using a scanning tunneling microscope tip. This leads to controlled phase separation and formation of localized metallic nanoislands in the COI matrix which have been detected by local tunneling conductance mapping. The metallic regions thus created persist even after reducing the injected current to lower values. The original conductance state can be restored by injecting a current of similar magnitude but of opposite polarity. We thus achieve reversible nanoscale phase separation that gives rise to the possibility to "write, read, and erase" nanosized conducting regions in an insulating matrix with high spatial resolution. △ Less

Submitted 29 September, 2007; originally announced October 2007.

Comments: 8 pages, 4 figures, Appl. Phys. Lett (accepted for publication)

Journal ref: Applied Physics Letters, vol. 91, 143124 (2007)

Scanning Thermal Microscope Study of a Metal Film Under Current Stressing: Role of Temperature Inhomogeneity in Damage Process

Authors: Achyut Bora, A. K. Raychaudhuri

Abstract: We report direct observation of the evolution of local temperature inhomogeneity and the resulting atomic migration in a metal film (Ag on Si) stressed by a current by using a Scanning Thermal Microscope that allows simultaneous temperature mapping and topography imaging. The experimental observation is analyzed using a model based simulation. The experimental observation and the simulation show… ▽ More We report direct observation of the evolution of local temperature inhomogeneity and the resulting atomic migration in a metal film (Ag on Si) stressed by a current by using a Scanning Thermal Microscope that allows simultaneous temperature mapping and topography imaging. The experimental observation is analyzed using a model based simulation. The experimental observation and the simulation show that due to current stressing the temperature of the film becomes significantly inhomogeneous over time (with local temperature deviating strongly from the mean). This creates local stress as well as local temperature gradient that lead to mass migration in addition to the electromigration. We show that the local temperature inhomogeneity serves as one of the main agents for local atomic migration which leads to change in film microstructure. The migration leads to damage and eventual failure as simultaneously monitored by in-situ resistance measurement. △ Less

Submitted 7 July, 2007; originally announced July 2007.

Comments: 25 pages, 9 figures

Colossal electroresistance in ferromagnetic insulating state of single crystal Nd$_0.7$Pb$_0.3$MnO$_3$

Authors: Himanshu Jain, A. K. Raychaudhuri, Nilotpal Ghosh, H. L. Bhat

Abstract: Colossal electroresistance (CER) has been observed in the ferromagnetic insulating (FMI) state of a manganite. Notably, the CER in the FMI state occurs in the absence of magnetoresistance (MR). Measurements of electroresistance (ER) and current induced resistivity switching have been performed in the ferromagnetic insulating state of a single crystal manganite of composition Nd$_0.7$Pb$_0.3$MnO… ▽ More Colossal electroresistance (CER) has been observed in the ferromagnetic insulating (FMI) state of a manganite. Notably, the CER in the FMI state occurs in the absence of magnetoresistance (MR). Measurements of electroresistance (ER) and current induced resistivity switching have been performed in the ferromagnetic insulating state of a single crystal manganite of composition Nd$_0.7$Pb$_0.3$MnO$_3$ (NPMO30). The sample has a paramagnetic to ferromagnetic (Curie) transition temperature, Tc = 150 K and the ferromagnetic insulating state is realized for temperatures, T <~ 130 K. The colossal electroresistance, arising from a strongly nonlinear dependence of resistivity ($ρ$) on current density (j), attains a large value ($\approx 100%$) in the ferromagnetic insulating state. The severity of this nonlinear behavior of resistivity at high current densities is progressively enhanced with decreasing temperature, resulting ultimately, in a regime of negative differential resistivity (NDR, d$ρ$/dj < 0) for temperatures <~ 25 K. Concomitant with the build-up of the ER however, is a collapse of the MR to a small value (< 20%) even in magnetic field, H = 7 T. This demonstrates that the mechanisms that give rise to ER and MR are effectively decoupled in the ferromagnetic insulating phase of manganites. We establish that, the behavior of ferromagnetic insulating phase is distinct from the ferromagnetic metallic (FMM) phase as well as the charge ordered insulating (COI) phase, which are the two commonly realized ground state phases of manganites. △ Less

Submitted 5 January, 2007; originally announced January 2007.

Comments: 24 pages (RevTeX4 preprint), 8 figures, submitted to PRB

Temperature dependence of the resistance of metallic nanowires (diameter $\geq$ 15 nm): Applicability of Bloch-Grüneisen theorem

Authors: Aveek Bid, Achyut Bora, A. K. Raychaudhuri

Abstract: We have measured the resistances (and resistivities) of Ag and Cu nanowires of diameters ranging from 15nm to 200nm in the temperature range 4.2K-300K with the specific aim to assess the applicability of the Bloch-Grüneisen formula for electron phonon resistivity in these nanowires. The wires were grown within polymeric templates by electrodeposition. We find that in all the samples the resistan… ▽ More We have measured the resistances (and resistivities) of Ag and Cu nanowires of diameters ranging from 15nm to 200nm in the temperature range 4.2K-300K with the specific aim to assess the applicability of the Bloch-Grüneisen formula for electron phonon resistivity in these nanowires. The wires were grown within polymeric templates by electrodeposition. We find that in all the samples the resistance reaches a residual value at T=4.2K and the temperature dependence of resistance can be fitted to the Bloch-Grüneisen formula in the entire temperature range with a well defined transport Debye temperature ($Θ_{R}$). The value of Debye temperature obtained from the fits lie within 8% of the bulk value for Ag wires of diameter 15nm while for Cu nanowires of the same diameter the Debye temperature is significantly lesser than the bulk value. The electron-phonon coupling constants (measured by $α_{el-ph}$ or $α_{R}$) in the nanowires were found to have the same value as that of the bulk. The resistivities of the wires were seen to increase as the wire diameter was decreased. This increase in the resistivity of the wires may be attributed to surface scattering of conduction electrons. The specularity p was estimated to be about 0.5. The observed results allow us to obtain the resistivities exactly from the resistance and gives us a method of obtaining the exact numbers of wires within the measured array (grown within the template). △ Less

Submitted 26 July, 2006; originally announced July 2006.

Comments: 9 pages, 10 figures

Journal ref: Phys. Rev. B 74, 035426 (2006)

1/f noise in nanowires

Authors: Aveek Bid, Achyut Bora, A. K. Raychaudhuri

Abstract: We have measured the low-frequency resistance fluctuations (1 mHz<f<10 Hz) in Ag nanowires of diameter 15 nm<d<200 nm at room temperatures. The power spectral density (PSD) of the fluctuations has a 1/f^α character as seen in metallic films and wires of larger dimension. Additionally, the PSD has a significant low-frequency component and the value of αincreases from the usual 1 to ~3/2 as the di… ▽ More We have measured the low-frequency resistance fluctuations (1 mHz<f<10 Hz) in Ag nanowires of diameter 15 nm<d<200 nm at room temperatures. The power spectral density (PSD) of the fluctuations has a 1/f^α character as seen in metallic films and wires of larger dimension. Additionally, the PSD has a significant low-frequency component and the value of αincreases from the usual 1 to ~3/2 as the diameter d is reduced. The value of the normalized fluctuation \frac{<ΔR^2>}{R^2} also increases as the diameter d is reduced. We observe that there are new features in the 1/f noise as the size of the wire is reduced and they become more prominent as the diameter of the wires approaches 15nm. It is important to investigate the origin of the new behavior as 1/f noise may become a limiting factor in the use of metal wires of nanometer dimensions as interconnects. △ Less

Submitted 6 December, 2005; originally announced December 2005.

Comments: 9 pages, 6 figures, published in Nanotechnology

Journal ref: Nanotechnology 17 (2006) 152-156

Effect of ambient on the thermal parameters of a micromachined bolometer

Authors: K. S. Nagapriya, A. K. Raychaudhuri, V. K. Jain, C. R. Jalwania, Vikram Kumar

Abstract: The thermal characterization of bolometers is needed for optimal design as well as applications. In this letter, we present results of the effect of environment on the thermal properties of micromachined bolometers. We find that while in vacuum, the thermal response can be represented by a single time constant, in presence of an ambient gas, the thermal response can no longer be described by a s… ▽ More The thermal characterization of bolometers is needed for optimal design as well as applications. In this letter, we present results of the effect of environment on the thermal properties of micromachined bolometers. We find that while in vacuum, the thermal response can be represented by a single time constant, in presence of an ambient gas, the thermal response can no longer be described by a single time constant. This will have a direct implication on frequency dependence of responsivity. We present a model to explain our data which involves the finite diffusion time in the ambient gas and the associated extra thermal mass. △ Less

Submitted 8 January, 2005; originally announced January 2005.

Comments: 3 pages, 4 figures

Journal ref: Appl. Phys. Letts. (82), 2721, (2003)

Direct observation of large temperature fluctuations during DNA thermal denaturation

Authors: K. S. Nagapriya, A. K. Raychaudhuri, Dipankar Chatterji

Abstract: In this paper we report direct measurement of large low frequency temperature fluctuations in double stranded (ds) DNA when it undergoes thermal denaturation transition. The fluctuation, which occurs only in the temperature range where the denaturation occurs, is several orders more than the expected equilibrium fluctuation. It is absent in single stranded (ss) DNA of the same sequence. The fluc… ▽ More In this paper we report direct measurement of large low frequency temperature fluctuations in double stranded (ds) DNA when it undergoes thermal denaturation transition. The fluctuation, which occurs only in the temperature range where the denaturation occurs, is several orders more than the expected equilibrium fluctuation. It is absent in single stranded (ss) DNA of the same sequence. The fluctuation at a given temperature also depends on the wait time and vanishes in a scale of few hours. It is suggested that the large fluctuation occurs due to coexisting denaturated and closed base pairs that are in dynamic equilibrium due to transition through a potential barrier in the scale of 25-30k_{B}T_{0}(T_{0}=300K). △ Less

Submitted 10 February, 2006; v1 submitted 6 January, 2005; originally announced January 2005.

Comments: 4 pages, 5 figures, Replaced with revised version

Journal ref: PRL 96, 038102 (2006)

Low frequency conductance fluctuations (1/f^αnoise) in 15nm Ag nanowires: Implication on its stability

Authors: Aveek Bid, Achyut Bora, A. K. Raychaudhuri, D. Chakravortya

Abstract: We have measured the low frequency (1mHz<f<10Hz) resistance fluctuations in metallic nanowires (diameter 15nm to 200nm) in the temperature range 77K to 400K. The nanowires were grown electrochemically in polycarbonate membranes and the measurements were carried out in arrays of nanowires by retaining them in the membrane. A large fluctuation in excess of conventional 1/f noise which peaks beyond… ▽ More We have measured the low frequency (1mHz<f<10Hz) resistance fluctuations in metallic nanowires (diameter 15nm to 200nm) in the temperature range 77K to 400K. The nanowires were grown electrochemically in polycarbonate membranes and the measurements were carried out in arrays of nanowires by retaining them in the membrane. A large fluctuation in excess of conventional 1/f noise which peaks beyond a certain temperature was found. The fluctuations with a significant low frequency component (~1/f^{3/2}) arise when the diameter of the wire ~15nm and vanishes rapidly as the diameter is increased. We argue that Rayleigh-Plateau instability is the likely cause of this excess noise. △ Less

Submitted 6 December, 2005; v1 submitted 5 November, 2004; originally announced November 2004.

Comments: 5 pages, 5 figures. Published in Physical Review B

Journal ref: Physical Review B, 72, 113415 (2005)

A set-up for measurement of low frequency conductance fluctuation (noise) using digital signal processing techniques

Authors: Arindam Ghosh, Swastik Kar, Aveek Bid, A. K. Raychaudhuri

Abstract: We describe a set up for measurements of low frequency (1 mHz < f < 20 Hz) conductance fluctuations in a solid conductor. The set-up uses a five probe a.c. measurement technique and extensive digital signal processing to reach a noise floor down to $S_{v}(f) \leq 10^{-20}$ V$^{2}$Hz$^{-1}$. The set up also allows measurement of noise using an a.c. in presence of a superimposed direct current. Th… ▽ More We describe a set up for measurements of low frequency (1 mHz < f < 20 Hz) conductance fluctuations in a solid conductor. The set-up uses a five probe a.c. measurement technique and extensive digital signal processing to reach a noise floor down to $S_{v}(f) \leq 10^{-20}$ V$^{2}$Hz$^{-1}$. The set up also allows measurement of noise using an a.c. in presence of a superimposed direct current. This feature is desirable in studies of electromigration damage or in systems that show non-linear conductivity. In addition, we describe a scheme which allows us to obtain the probability density function of the conductance fluctuation after subtracting the extraneous noise contributions (background) from the observed noise. The set-up has been used for conductance fluctuation measurement in the temperature range 1.5 K < T < 500 K in the presence of magnetic fields. We present some representative data obtained by this system. △ Less

Submitted 4 February, 2004; originally announced February 2004.

Comments: 25 pages 17 figures

Collapse of the charge ordering state at high magnetic fields in the rare-earth manganite, Pr_{0.63}Ca_{0.37}MnO_3

Authors: K. S. Nagapriya, A. K. Raychaudhuri, Bhavtosh Bansal, V. Venkataraman, Sachin Parashar, C. N. R. Rao

Abstract: We have investigated the specific heat and resistivity of a single crystal of Pr_{0.63}Ca_{0.37}MnO_3 around the charge ordering (CO) transition temperature, T_{CO}, in the presence of high magnetic fields (<=12T) which can melt the charge ordered state. At low magnetic fields (<=10T), the manganite transforms from a charge-disordered paramagnetic insulating (PI) state to a charge-ordered insula… ▽ More We have investigated the specific heat and resistivity of a single crystal of Pr_{0.63}Ca_{0.37}MnO_3 around the charge ordering (CO) transition temperature, T_{CO}, in the presence of high magnetic fields (<=12T) which can melt the charge ordered state. At low magnetic fields (<=10T), the manganite transforms from a charge-disordered paramagnetic insulating (PI) state to a charge-ordered insulating (COI) state as the temperature is lowered. The COI state becomes unstable beyond a threshold magnetic field and melts to a ferromagnetic metallic phase (FMM). This occurs for T < T_{CO}. However, above a critical field μ_0H_ρ^*, the sample shows the onset of a metallic phase for T>T_{CO} and the COI transition occurs from a metallic phase. The onset temperature of the high-field metallic behavior decreases with an increase in the field and above a field μ_0H^*, the COI transition does not occur and the CO state ceases to occur at all T. The entropy change involved in the CO transition, ΔS_{CO}~1.6J/molK at 0T, decreases with increasing field and eventually vanishes for a field μ_0H^*. The collapse of the CO state above μ_0$H$^* is thus associated with a collapse of the entropy that stabilizes the CO state. △ Less

Submitted 10 February, 2006; v1 submitted 21 January, 2004; originally announced January 2004.

Comments: 9 pages,6 figures, Replaced with revised version

Journal ref: PHYSICAL REVIEW B 71, 024426 (2005)

Low frequency random telegraphic noise (RTN) and 1/f noise in the rare-earth manganite Pr$_{0.63}$Ca$_{0.37}$MnO$_3$ near the charge-ordering transition

Authors: Aveek bid, Ayan Guha, A. K. Raychaudhuri

Abstract: We have studied low frequency resistance fluctuations (noise) in a single crystal of the rare earth perovskite manganite Pr$_{0.63}$Ca$_{0.37}$MnO$_3$ which shows a charge ordering transition at a temperature $T_{CO}$ ~ 245K. The noise measurements were made using an ac bias with and without a dc bias current imposed on it. We find that the spectral power $S_V(f)$ contains two components - one b… ▽ More We have studied low frequency resistance fluctuations (noise) in a single crystal of the rare earth perovskite manganite Pr$_{0.63}$Ca$_{0.37}$MnO$_3$ which shows a charge ordering transition at a temperature $T_{CO}$ ~ 245K. The noise measurements were made using an ac bias with and without a dc bias current imposed on it. We find that the spectral power $S_V(f)$ contains two components - one broad band 1/f part that exists for all frequency and temperature ranges and a single frequency Lorentzian of frequency $f_c$ which is strongly temperature dependent. The Lorentzian in $S_V(f)$ which appears due to Random telegraphic noise (RTN) as seen in the time series of the fluctuation, is seen in a very narrow temperature window around $T_{CO}$ where it makes the dominating contribution to the fluctuation. When the applied dc bias is increased beyond a certain threshold current density $J_{th}$, the electrical conduction becomes non-linear and one sees appearance of a significant Lorentzian contribution in the spectral power due to RTN. We explain the appearance of the RTN as due to coexisting Charge ordered (CO) and reverse orbitally ordered (ROO) phases which are in dynamical equilibrium over a mesoscopic length scale ($\approx 30nm$) and the kinetics being controlled by an activation barrier $E_{a} ~ 0.45eV. The 1/f noise is low for $T>>T_{CO}$ but increases by nearly two orders in a narrow temperature range as $T_{CO}$ is approached from above and the probability distribution function (PDF) deviates strongly from a Gaussian. We explain this behavior as due to approach of charge localization with correlated fluctuators which make the PDF non-Gaussian. △ Less

Submitted 26 March, 2003; originally announced March 2003.

Comments: 23 pages, 14 figures

Journal ref: Phys. Rev. B 67, 174415 (2003)

Observation of non-gaussian conductance fluctuations at low temperatures in Si:P(B) at the metal-insulator transition

Authors: Swastik Kar, A. K. Raychaudhuri, Arindam Ghosh

Abstract: We report investigations of conductance fluctuations (noise) in doped silicon at low temperatures (T$<20$K) as it is tuned through the metal-insulator transition (MIT). The scaled magnitude of noise, $γ_H$, increases with decrease in T following an approximate power law $γ_H \sim T^{-β}$. At low T, $γ_H$ diverges as $n/n_c$ crosses 1 from the metallic side. We find that the distribution function… ▽ More We report investigations of conductance fluctuations (noise) in doped silicon at low temperatures (T$<20$K) as it is tuned through the metal-insulator transition (MIT). The scaled magnitude of noise, $γ_H$, increases with decrease in T following an approximate power law $γ_H \sim T^{-β}$. At low T, $γ_H$ diverges as $n/n_c$ crosses 1 from the metallic side. We find that the distribution function and second spectrum of the fluctuations show strong non-gaussian behavior below 20K as $n/n_c$ decreases through 1. In particular, the observed distribution function which is gaussian for $n/n_c >> 1$, develops a log-normal tail as the transition is approached from the metallic side and eventually it dominates in the critical region. △ Less

Submitted 8 December, 2002; originally announced December 2002.

Comments: 9 pages, 5 figures

Specific heat study of single crystalline Pr$_{0.63}$ Ca$_{0.37}$ MnO$_{3}$ in presence of a magnetic field

Authors: A. K. Raychaudhuri, Ayan Guha, I. Das, R. Rawat, C. N. R. Rao

Abstract: We present the results of a study of specific heat on a single crystal of Pr$_{0.63}$Ca$_{0.37}$MnO$_3$ performed over a temperature range 3K-300K in presence of 0 and 8T magnetic fields. An estimate of the entropy and latent heat in a magnetic field at the first order charge ordering (CO) transition is presented. The total entropy change at the CO transition which is $\approx$ 1.8 J/mol K at 0T… ▽ More We present the results of a study of specific heat on a single crystal of Pr$_{0.63}$Ca$_{0.37}$MnO$_3$ performed over a temperature range 3K-300K in presence of 0 and 8T magnetic fields. An estimate of the entropy and latent heat in a magnetic field at the first order charge ordering (CO) transition is presented. The total entropy change at the CO transition which is $\approx$ 1.8 J/mol K at 0T, decreases to $\sim$ 1.5 J/mol K in presence of 8T magnetic field. Our measurements enable us to estimate the latent heat $L_{CO}$ $\approx$ 235 J/mol involved in the CO transition. Since the entropy of the ferromagnetic metallic (FMM) state is comparable to that of the charge-ordered insulating (COI) state, a subtle change in entropy stabilises either of these two states. Our low temperature specific heat measurements reveal that the linear term is absent in 0T and surprisingly not seen even in the metallic FMM state. △ Less

Submitted 20 May, 2001; originally announced May 2001.

Comments: 8 pages (in RevTEX format), 12 figures (in postscript format) Submitted to Phys. Rev. B

On the factors affecting the high temperature insulator-metal transition in rare-earth manganites

Authors: Dipten Bhattacharya, Pintu Das, A. Pandey, A. K. Raychaudhuri, Amitava Chakraborty, V. N. Ojha

Abstract: The measurement of resistivity across a wide temperature range - from 15 to 1473 K - in rare-earth manganite series of compounds reveals a very interesting feature : normally observed insulating pattern beyond Tc (Curie Point) gives way to a reentrant metallic pattern around a characteristic temperature T*. The transport activation barrier Ea collapses to zero around T*. T* is found to be depend… ▽ More The measurement of resistivity across a wide temperature range - from 15 to 1473 K - in rare-earth manganite series of compounds reveals a very interesting feature : normally observed insulating pattern beyond Tc (Curie Point) gives way to a reentrant metallic pattern around a characteristic temperature T*. The transport activation barrier Ea collapses to zero around T*. T* is found to be dependent on the carrier concentration or the concentration of the Jahn-Teller-active Mn(3+) ions as well as on the average A-site radius <rA> for a fixed carrier concentration. These factors govern the effective lattice distortion and hence lead to the variation in the conduction bandwidth. Our data cover a wide range - from T*>>Tc for smaller bandwidth to T* tending towards Tc for larger bandwidth. These results seem to provide evidence of the onset of lattice distortion at high temperature (around T*) and its variation. Since lattice distortion governs the magnetic, transport and other important behaviors significantly, our data assume importance as they offer a new measure of the effective distortion and its tunability. △ Less

Submitted 21 November, 2000; originally announced November 2000.

Comments: 9 Pages including 5 figures

Thermal relaxation in charge ordered Pr$_{0.63}$ Ca$_{0.37}$ MnO$_3$ in presence of a magnetic field

Authors: A. K. Raychaudhuri, Ayan Guha, I. Das, R. Rawat, C. N. R. Rao

Abstract: We report observation of substantial thermal relaxation in single crystal of charge ordered system Pr$_{0.63}$Ca$_{0.37}$MnO$_3$ in an applied magnetic field of H = 8T. The relaxation is observed when the temperature is scanned in presence of a magnetic field in the temperature interval $T_{MH}<T<T_{CO}$ where $T_{CO}$ is the charge ordering temperature and $T_{MH}$ is charge melting temperature… ▽ More We report observation of substantial thermal relaxation in single crystal of charge ordered system Pr$_{0.63}$Ca$_{0.37}$MnO$_3$ in an applied magnetic field of H = 8T. The relaxation is observed when the temperature is scanned in presence of a magnetic field in the temperature interval $T_{MH}<T<T_{CO}$ where $T_{CO}$ is the charge ordering temperature and $T_{MH}$ is charge melting temperature in a field. In this temperature range the system has coexisting charged ordered insulator (COI) and ferromagnetic metallic (FMM) phases. No such relaxation is observed in the COI state in H = 0T or in the FMM phase at $T < T_{MH}$ in presence of a magnetic field. We conclude that the thermal relaxation is due to two coexisting phases with nearly same free energies but separated by a potential barrier. This barrier makes the transformation from one phase to the other time-dependent in the scale of the specific heat experiment and gives rise to the thermal relaxation. △ Less

Submitted 23 May, 2001; v1 submitted 21 July, 2000; originally announced July 2000.

Comments: 4 pages LaTEX, 3 eps figures

Magnetic Field resulting from non-linear electrical transport in single crystals of charge-ordered Pr$_{0.63}$ Ca$_{0.37}$ MnO$_{3}$}

Authors: Ayan Guha, N. Khare, A. K. Raychaudhuri, C. N. R Rao

Abstract: In this letter we report that the current induced destabilization of the charge ordered (CO) state in a rare-earth manganite gives rise to regions with ferromagnetic correlation. We did this experiment by measurement of the I-V curves in single crystal of the CO system Pr$_{0.63}$Ca$_{0.37}$MnO$_{3}$ and simultanously measuring the magnetization of the current carrying conductor using a high T… ▽ More In this letter we report that the current induced destabilization of the charge ordered (CO) state in a rare-earth manganite gives rise to regions with ferromagnetic correlation. We did this experiment by measurement of the I-V curves in single crystal of the CO system Pr$_{0.63}$Ca$_{0.37}$MnO$_{3}$ and simultanously measuring the magnetization of the current carrying conductor using a high T$_c$ SQUID working at T = 77K. We have found that the current induced destabilization of the CO state leads to a regime of negative differential resistance which leads to a small enhancement of the magnetization of the sample, indicating ferromagnetically aligned moments. △ Less

Submitted 11 May, 2000; originally announced May 2000.

Comments: 4 pages LateX, 4 eps figures

Non-linear conduction in charge-ordered Pr$_{0.63}$ Ca$_{0.37}$ MnO$_{3}$ : Effect of magnetic fields

Authors: Ayan Guha, A. K. Raychaudhuri, A. R. Raju, C. N. R. Rao

Abstract: Non-linear conduction in a single crystal of charge-ordered Pr$_{0.63}$Ca$_{0.37}$MnO$_{3}$ has been investigated in an applied magnetic field. In zero field, the non-linear conduction, which starts at T$<$T$_{CO}$ can give rise to a region of negative differential resistance (NDR) which shows up below the Néel temperature. Application of a magnetic field inhibits the appearance of NDR and makes… ▽ More Non-linear conduction in a single crystal of charge-ordered Pr$_{0.63}$Ca$_{0.37}$MnO$_{3}$ has been investigated in an applied magnetic field. In zero field, the non-linear conduction, which starts at T$<$T$_{CO}$ can give rise to a region of negative differential resistance (NDR) which shows up below the Néel temperature. Application of a magnetic field inhibits the appearance of NDR and makes the non-linear conduction strongly hysteritic on cycling of the bias current. This is most severe in the temperature range where the charge ordered state melts in an applied magnetic field. Our experiment strongly suggests that application of a magnetic field in the CO regime causes a coexistance two phases. △ Less

Submitted 30 April, 2000; originally announced May 2000.

Comments: 4 pages TeX; 5 eps figures; Submitted to Phys. Rev. B