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Defect Tolerant Monolayer Transition Metal Dichalcogenides
Authors:
Mohnish Pandey,
Filip A. Rasmussen,
Korina Kuhar,
Thomas Olsen,
Karsten W. Jacobsen,
Kristian S. Thygesen
Abstract:
Localized electronic states formed inside the band gap of a semiconductor due to crystal defects can be detrimental to the material's optoelectronic properties. Semiconductors with lower tendency to form defect induced deep gap states are termed defect tolerant. Here we provide a systematic first principles investigation of defect tolerance in 29 monolayer transition metal dichalcogenides (TMDs) o…
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Localized electronic states formed inside the band gap of a semiconductor due to crystal defects can be detrimental to the material's optoelectronic properties. Semiconductors with lower tendency to form defect induced deep gap states are termed defect tolerant. Here we provide a systematic first principles investigation of defect tolerance in 29 monolayer transition metal dichalcogenides (TMDs) of interest for nanoscale optoelectronics. We find that the TMDs based on group VI and X metals form deep gap states upon creation of a chalcogen (S, Se, Te) vacancy while the TMDs based on group IV metals form only shallow defect levels and are thus predicted to be defect tolerant. Interestingly, all the defect sensitive TMDs have valence and conduction bands with very similar orbital composition. This indicates a bonding/anti-bonding nature of the gap which in turn suggests that dangling bonds will fall inside the gap. These ideas are made quantitative by introducing a descriptor that measures the degree of similarity of the conduction and valence band manifolds. Finally, the study is generalized to non-polar nanoribbons of the TMDs where we find that only the defect sensitive materials form edge states within the band gap.
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Submitted 11 April, 2016;
originally announced April 2016.
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Efficient many-body calculations of 2D materials using exact limits for the screened potential: Band gaps of MoS$_2$, hBN, and phosphorene
Authors:
Filip A. Rasmussen,
Per S. Schmidt,
Kirsten T. Winther,
Kristian S. Thygesen
Abstract:
Calculating the quasiparticle (QP) band structure of two-dimensional (2D) materials within the GW self-energy approximation has proven to be a rather demanding computational task. The main reason is the strong $\mathbf{q}$-dependence of the 2D dielectric function around $\mathbf{q} = \mathbf{0}$ that calls for a much denser sampling of the Brillouin zone than is necessary for similar 3D solids. He…
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Calculating the quasiparticle (QP) band structure of two-dimensional (2D) materials within the GW self-energy approximation has proven to be a rather demanding computational task. The main reason is the strong $\mathbf{q}$-dependence of the 2D dielectric function around $\mathbf{q} = \mathbf{0}$ that calls for a much denser sampling of the Brillouin zone than is necessary for similar 3D solids. Here we use an analytical expression for the small $\mathbf{q}$-limit of the 2D response function to perform the BZ integral over the critical region around $\mathbf{q} = \mathbf{0}$. This drastically reduces the requirements on the $\mathbf{q}$-point mesh and implies a significant computational speed-up. For example, in the case of monolayer MoS$_2$, convergence of the $G_0W_0$ band gap to within $\sim 0.1\,\mathrm{eV}$ is achieved with $12\times 12$ $\mathbf{q}$-points rather than the $36\times 36$ mesh required with discrete BZ sampling techniques. We perform a critical assessment of the band gap of the three prototypical 2D semiconductors MoS$_2$, hBN, and phosphorene including the effect of self-consistency at the GW$_0$ and GW level. The method is implemented in the open source GPAW code.
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Submitted 19 June, 2016; v1 submitted 31 October, 2015;
originally announced November 2015.
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Computational 2D Materials Database: Electronic Structure of Transition-Metal Dichalcogenides and Oxides
Authors:
Filip Anselm Rasmussen,
Kristian Sommer Thygesen
Abstract:
We present a comprehensive first-principles study of the electronic structure of 51 semiconducting monolayer transition metal dichalcogenides and -oxides in the 2H and 1T hexagonal phases. The quasiparticle (QP) band structures with spin-orbit coupling are calculated in the $G_0W_0$ approximation and comparison is made with different density functional theory (DFT) descriptions. Pitfalls related t…
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We present a comprehensive first-principles study of the electronic structure of 51 semiconducting monolayer transition metal dichalcogenides and -oxides in the 2H and 1T hexagonal phases. The quasiparticle (QP) band structures with spin-orbit coupling are calculated in the $G_0W_0$ approximation and comparison is made with different density functional theory (DFT) descriptions. Pitfalls related to the convergence of $GW$ calculations for 2D materials are discussed together with possible solutions. The monolayer band edge positions relative to vacuum are used to estimate the band alignment at various heterostructure interfaces. The sensitivity of the band structures to the in-plane lattice constant is analysed and rationalized in terms of the electronic structure. Finally, the $q$-dependent dielectric functions and effective electron/hole masses are obtained from the QP band structure and used as input to a 2D hydrogenic model to estimate exciton binding energies. Throughout the paper we focus on trends and correlations in the electronic structure rather than detailed analysis of specific materials. All the computed data is available in an open database.
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Submitted 9 June, 2015;
originally announced June 2015.
