Showing 1–14 of 14 results for author: Raskin, J

Band gap reduction in highly-strained silicon beams predicted by first-principles theory and validated using photoluminescence spectroscopy

Authors: Nicolas Roisin, Marie-Stéphane Colla, Romain Scaffidi, Thomas Pardoen, Denis Flandre, Jean-Pierre Raskin

Abstract: A theoretical study of the band gap reduction under tensile stress is performed and validated through experimental measurements. First-principles calculations based on density functional theory (DFT) are performed for uniaxial stress applied in the [001], [110] and [111] directions. The calculated band gap reductions are equal to 126, 240 and 100 meV at 2$\%$ strain, respectively. Photoluminescenc… ▽ More A theoretical study of the band gap reduction under tensile stress is performed and validated through experimental measurements. First-principles calculations based on density functional theory (DFT) are performed for uniaxial stress applied in the [001], [110] and [111] directions. The calculated band gap reductions are equal to 126, 240 and 100 meV at 2$\%$ strain, respectively. Photoluminescence spectroscopy experiments are performed by deformation applied in the [110] direction. Microfabricated specimens have been deformed using an on-chip tensile technique up to ~1$\%$ as confirmed by back-scattering Raman spectroscopy. A fitting correction based on the band gap fluctuation model has been used to eliminate the specimen interference signal and retrieve reliable values. Very good agreement is observed between first-principles theory and experimental results with a band gap reduction of, respectively, 93 and 91 meV when the silicon beam is deformed by 0.95$\%$ along the [110] direction. △ Less

Submitted 21 August, 2023; originally announced August 2023.

Detection mechanism in highly sensitive ZnO nanowires network gas sensors

Authors: Nohora Caicedo, Renaud Leturcq, Jean-Pierre Raskin, Denis Flandre, Damien Lenoble

Abstract: Metal-oxide nanowires are showing a great interest in the domain of gas sensing due to their large response even at a low temperature, enabling low-power gas sensors. However their response is still not fully understood, and mainly restricted to the linear response regime, which limits the design of appropriate sensors for specific applications. Here we analyse the non-linear response of a sensor… ▽ More Metal-oxide nanowires are showing a great interest in the domain of gas sensing due to their large response even at a low temperature, enabling low-power gas sensors. However their response is still not fully understood, and mainly restricted to the linear response regime, which limits the design of appropriate sensors for specific applications. Here we analyse the non-linear response of a sensor based on ZnO nanowires network, both as a function of the device geometry and as a response to oxygen exposure. Using an appropriate model, we disentangle the contribution of the nanowire resistance and of the junctions between nanowires in the network. The applied model shows a very good consistency with the experimental data, allowing us to demonstrate that the response to oxygen at room temperature is dominated by the barrier potential at low bias voltage, and that the nanowire resistance starts to play a role at higher bias voltage. This analysis allows us to find the appropriate device geometry and working point in order to optimize the sensitivity. Such analysis is important for providing design rules, not only for sensing devices, but also for applications in electronics and opto-electronics using nanostructures networks with different materials and geometries. △ Less

Submitted 9 April, 2019; originally announced April 2019.

Journal ref: Sens. Act. B 297, 126602 (2019)

Using top graphene layer as sacrificial protection during dielectric atomic layer deposition

Authors: Xiaohui Tang, Nicolas Reckinger, Olivier Poncelet, Pierre Louette, Jean-François Colomer, Jean-Pierre Raskin, Benoit Hackens, Laurent A. Francis

Abstract: We investigate the structural damage of graphene underlying dielectrics (HfO2 and Al2O3) by remote plasma-enhanced atomic layer deposition (PE-ALD). Dielectric film is grown on bilayer graphene without inducing significant damage to the bottom graphene layer. Based on Raman spectra, we demonstrate that the bottom graphene layer has the salient features of single layer graphene. During the initial… ▽ More We investigate the structural damage of graphene underlying dielectrics (HfO2 and Al2O3) by remote plasma-enhanced atomic layer deposition (PE-ALD). Dielectric film is grown on bilayer graphene without inducing significant damage to the bottom graphene layer. Based on Raman spectra, we demonstrate that the bottom graphene layer has the salient features of single layer graphene. During the initial half-cycle PE-ALD, the upper graphene layer reacts with the metal precursor, forming uniform nucleation islands or an active metallic carbide layer. After monolayer dielectric coverage, the bottom graphene layer has additional protection. The upper graphene layer serves as a sacrificial layer, which not only promotes the adhesion of dielectric on graphene, but also protects the lattice symmetry of the bottom graphene layer. Our results indicate that bilayer graphene allows for controlling/limiting the degree of defect during the ALD of dielectrics and could be a good starting material for building filed effect transistors and sensing devices. △ Less

Submitted 15 March, 2014; originally announced March 2014.

Self-Formation of Sub-10-nm Nanogaps by Silicidation for Resistive Switch in Air

Authors: Xiaohui Tang, Laurent A. Francis, Constantin Augustin Dutu, Nicolas Reckinger, Jean-Pierre Raskin

Abstract: We developed a simple and reliable method for the fabrication of sub-10-nm wide nanogaps. The self-formed nanogap is based on the stoichiometric solid-state reaction between metal and Si atoms during silicidation process. The nanogap width is deter- mined by the metal layer thickness. Our proposed method produces nanogaps either symmetric or asymmetric electrodes, as well as, multiple nanogaps wit… ▽ More We developed a simple and reliable method for the fabrication of sub-10-nm wide nanogaps. The self-formed nanogap is based on the stoichiometric solid-state reaction between metal and Si atoms during silicidation process. The nanogap width is deter- mined by the metal layer thickness. Our proposed method produces nanogaps either symmetric or asymmetric electrodes, as well as, multiple nanogaps within one unique process step for application to complex circuits. Therefore, this method provides high throughput and it is suitable for large-scale production. To demonstrate the feasibil- ity of the proposed fabrication method, nanogap resistive switches have been built and characterized. They exhibit a pronounced hysteresis with up to 103 on/off conductance ratios in air. Our results indicate that the voltages for initially electroforming the de- vice to the switch state are determinated by the nanogap sizes. However, the set and reset voltages of the device do not strongly dependent on the nanogap widths. These phenomena could be helpful to understand how the resistive switching is established. △ Less

Submitted 19 March, 2013; originally announced March 2013.

Comments: 26 pages, 6 figures, a research report

Twisted bi-layer graphene: microscopic rainbows

Authors: J. Campos-Delgado, G. Algara-Siller, C. N. Santos, U. Kaiser, J. -P. Raskin

Abstract: Twisted bi-layer graphene (tBLG) has recently attracted interest due to the peculiar electrical properties that arise from its random rotational configurations. Our experiments on CVD-grown graphene from Cu foil and transferred onto Si substrates, with an oxide layer of 100 nm, reveal naturally-produced bi-layer graphene patches which present different colorations when shined with white light. In… ▽ More Twisted bi-layer graphene (tBLG) has recently attracted interest due to the peculiar electrical properties that arise from its random rotational configurations. Our experiments on CVD-grown graphene from Cu foil and transferred onto Si substrates, with an oxide layer of 100 nm, reveal naturally-produced bi-layer graphene patches which present different colorations when shined with white light. In particular yellow-, pink- and blue- colored areas are evidenced. Combining optical microscopy, Raman spectroscopy and transmission electron microscopy we have been able to assign these colorations to ranges of rotational angles between the two graphene layers. Optical contrast simulations have been carried out, proving that the observation of the different colorations is due to the angle-dependent electronic properties of tBLG combined with the reflection that results from the layered structure tBLG / 100 nm-thick SiO2 / Si. Our results could lead the way to an easy selective identification of bi-layer graphene merely through the observation on an optical microscope. △ Less

Submitted 16 April, 2013; v1 submitted 16 February, 2013; originally announced February 2013.

Comments: This paper has been withdrawn by the author due to copyright incompatibility with the journal of final publication

Raman-scattering study of the phonon dispersion in twisted bi-layer graphene

Authors: J. Campos-Delgado, L. G. Cançado, C. A. Achete, A. Jorio, J. -P. Raskin

Abstract: Bi-layer graphene with a twist angle θ between the layers generates a superlattice structure known as Moiré pattern. This superlattice provides a θ-dependent q wavevector that activates phonons in the interior of the Brillouin zone. Here we show that this superlattice-induced Raman scattering can be used to probe the phonon dispersion in twisted bi-layer graphene (tBLG). The effect reported here i… ▽ More Bi-layer graphene with a twist angle θ between the layers generates a superlattice structure known as Moiré pattern. This superlattice provides a θ-dependent q wavevector that activates phonons in the interior of the Brillouin zone. Here we show that this superlattice-induced Raman scattering can be used to probe the phonon dispersion in twisted bi-layer graphene (tBLG). The effect reported here is different from the broadly studied double-resonance in graphene-related materials in many aspects, and despite the absence of stacking order in tBLG, layer breathing vibrations (namely ZO' phonons) are observed. △ Less

Submitted 28 March, 2013; v1 submitted 16 January, 2013; originally announced January 2013.

Comments: 18 pages, 4 figures, research article

Journal ref: Nano Research (2013)

Direct growth of graphitic carbon on Si(111)

Authors: Pham Thanh Trung, Frederic Joucken, Jessica Campos-Delgado, Jean-Pierre Raskin, Benoit Hackens, Robert Sporken

Abstract: Appropriate conditions for direct growth of graphitic films on Si(111) 7$\times$7 are investigated. The structural and electronic properties of the samples are studied by Auger Electron Spectroscopy (AES), X-ray Photoemission Spectroscopy (XPS), Low Energy Electron Diffraction (LEED), Raman spectroscopy and Scanning Tunneling Microscopy (STM). In particular, we present STM images of a carbon honey… ▽ More Appropriate conditions for direct growth of graphitic films on Si(111) 7$\times$7 are investigated. The structural and electronic properties of the samples are studied by Auger Electron Spectroscopy (AES), X-ray Photoemission Spectroscopy (XPS), Low Energy Electron Diffraction (LEED), Raman spectroscopy and Scanning Tunneling Microscopy (STM). In particular, we present STM images of a carbon honeycomb lattice grown directly on Si(111). Our results demonstrate that the quality of graphene films formed depends not only on the substrate temperature but also on the carbon buffer layer at the interface. This method might be very promising for graphene-based electronics and its integration into the silicon technology. △ Less

Submitted 22 December, 2012; originally announced December 2012.

Comments: Accepted in APL

Anisotropic Vapor HF etching of silicon dioxide for Si microstructure release

Authors: Vikram Passi, Ulf Sodervall, Bengt Nilsson, Goran Petersson, Mats Hagberg, Christophe Krzeminski, Emmanuel Dubois, Bert Du Bois, Jean-Pierre Raskin

Abstract: Damages are created in a sacrificial layer of silicon dioxide by ion implantation to enhance the etch rate of silicon-dioxide in liquid and vapor phase hydrofluoric acid. The etch rate ratio between implanted and unimplanted silicon dioxide is more than 150 in vapor hydrofluoric acid (VHF). This feature is of interest to greatly reduce the underetch of microelectromechanical systems anchors. Based… ▽ More Damages are created in a sacrificial layer of silicon dioxide by ion implantation to enhance the etch rate of silicon-dioxide in liquid and vapor phase hydrofluoric acid. The etch rate ratio between implanted and unimplanted silicon dioxide is more than 150 in vapor hydrofluoric acid (VHF). This feature is of interest to greatly reduce the underetch of microelectromechanical systems anchors. Based on the experimentally extracted etch rate of unimplanted and implanted silicon dioxide, the patterning of the sacrificial layer can be predicted by simulation. △ Less

Submitted 10 July, 2012; originally announced July 2012.

Journal ref: Microelectronic Engineering 95 (2012) 83-89

Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories

Authors: Xiaohui Tang, Christophe Krzeminski, Aurélien Lecavelier des Etangs-Levallois, Zhenkun Chen, Emmanuel Dubois, Erich Kasper, Alim Karmous, Nicolas Reckinger, Denis Flandre, Laurent A. Francis, Jean-Pierre Colinge, Jean-Pierre Raskin

Abstract: We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by quantum effects but also by the conduction-band offset that arises between Ge and Si. The dimension and position of each floating gate are well defined and controlled. The devices… ▽ More We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by quantum effects but also by the conduction-band offset that arises between Ge and Si. The dimension and position of each floating gate are well defined and controlled. The devices exhibit a long retention time and single-electron injection at room temperature. △ Less

Submitted 15 November, 2011; originally announced November 2011.

Journal ref: Nano Lett., 2011, 11 (11), pp 4520--4526

Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing

Authors: Nicolas Reckinger, Xiaohui Tang Vincent Bayot, Dmitri A. Yarekha, Emmanuel Dubois, Sylvie Godey, Xavier Wallart, Guilhem Larrieu, Adam Laszcz, Jacek Ratajczak, Pascal J. Jacques, Jean-Pierre Raskin

Abstract: The evolution of the Schottky barrier height (SBH) of Er silicide contacts to n-Si is investigated as a function of the annealing temperature. The SBH is found to drop substantially from 0.43 eV for the as-deposited sample to reach 0.28 eV, its lowest value, at 450 C. By x-ray diffraction, high resolution transmission electron microscopy, and x-ray photoelectron spectroscopy, the decrease in the S… ▽ More The evolution of the Schottky barrier height (SBH) of Er silicide contacts to n-Si is investigated as a function of the annealing temperature. The SBH is found to drop substantially from 0.43 eV for the as-deposited sample to reach 0.28 eV, its lowest value, at 450 C. By x-ray diffraction, high resolution transmission electron microscopy, and x-ray photoelectron spectroscopy, the decrease in the SBH is shown to be associated with the progressive formation of crystalline ErSi2-x. △ Less

Submitted 25 October, 2011; originally announced October 2011.

Journal ref: Applied Physics Letters 94, 191913, 2009

Erbium Silicide Growth in the Presence of Residual Oxygen

Authors: Nicolas Reckinger, Xiaohui Tang, Sylvie Godey, Emmanuel Dubois, Adam Laszcz, Jacek Ratajczak, Alexandru Vlad, Constantin Augustin Dutu, Jean-Pierre Raskin

Abstract: The chemical changes of Ti/Er/n-Si(100) stacks evaporated in high vacuum and grown ex situ by rapid thermal annealing were scrutinized. The emphasis was laid on the evolution with the annealing temperature of (i) the Er-Si solid-state reaction and (ii) the penetration of oxygen into Ti and its subsequent interaction with Er. For that sake, three categories of specimens were analyzed: as-deposited,… ▽ More The chemical changes of Ti/Er/n-Si(100) stacks evaporated in high vacuum and grown ex situ by rapid thermal annealing were scrutinized. The emphasis was laid on the evolution with the annealing temperature of (i) the Er-Si solid-state reaction and (ii) the penetration of oxygen into Ti and its subsequent interaction with Er. For that sake, three categories of specimens were analyzed: as-deposited, annealed at 300°C, and annealed at 600°C. It was found that the presence of residual oxygen into the annealing atmosphere resulted in a substantial oxidation of the Er film surface, irrespective of the annealing temperature. However, the part of the Er film in intimate contact with the Si bulk formed a silicide (amorphous at 300°C and crystalline at 600°C) invariably free of oxygen, as testified by x-ray photoelectron spectroscopy depth profiling and Schottky barrier height extraction of 0.3 eV at 600°C. This proves that, even if Er is highly sensitive to oxygen contamination, the formation of low Schottky barrier Er silicide contacts on n-Si is quite robust. Finally, the production of stripped oxygen-free Er silicide was demonstrated after process optimization. △ Less

Submitted 25 October, 2011; originally announced October 2011.

Journal ref: Journal of The Electrochemical Society, 158, H715-H723, 2011

Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation

Authors: Nicolas Reckinger, Claude Poleunis, Emmanuel Dubois, Constantin Augustin Dutu, Xiaohui Tang, Arnaud Delcorte, Jean-Pierre Raskin

Abstract: The segregation of As+ ions implanted into thin Er films deposited on n-Si substrates is studied after ErSi2-x formation. The same lowering of the effective Schottky barrier height (SBH) below 0.12 eV is obtained at moderate annealing temperatures, regardless of the redistribution of As dopants at the ErSi2-x/Si interface. On the other hand, if the implanted dose is slightly enhanced, the annealin… ▽ More The segregation of As+ ions implanted into thin Er films deposited on n-Si substrates is studied after ErSi2-x formation. The same lowering of the effective Schottky barrier height (SBH) below 0.12 eV is obtained at moderate annealing temperatures, regardless of the redistribution of As dopants at the ErSi2-x/Si interface. On the other hand, if the implanted dose is slightly enhanced, the annealing temperature required to reach sub-0.12-eV effective SBH can be further reduced. This process enables the formation of very low effective SBH ErSi2-x/n-Si contacts with a low thermal budget. △ Less

Submitted 25 October, 2011; originally announced October 2011.

Journal ref: Applied Physics Letters 99, 012110, 2011

Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width

Authors: Nicolas Reckinger, Xiaohui Tang, Emmanuel Dubois, Guilhem Larrieu, Denis Flandre, Jean-Pierre Raskin, Aryan Afzalian

Abstract: The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well modeled by thermionic-field emission for non-segregated contacts separated by micrometer-sized gaps. Still, an excess of current occurs at low temperature for short contact separations or dopant-segregated contacts when t… ▽ More The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well modeled by thermionic-field emission for non-segregated contacts separated by micrometer-sized gaps. Still, an excess of current occurs at low temperature for short contact separations or dopant-segregated contacts when the voltage applied to the device is sufficiently high. From two-dimensional self-consistent non-equilibrium Green's function simulations, the dependence of the Schottky barrier profile on the applied voltage, unaccounted for in usual thermionic-field emission models, is found to be the source of this deviation. △ Less

Submitted 25 October, 2011; originally announced October 2011.

Journal ref: Applied Physics Letters 98, 112102, 2011

A single layer hydrogen silsesquioxane (HSQ) based lift-off process for germanium and platinum

Authors: Vikram Passi, Aurélie Lecestre, Christophe Krzeminski, Guilhem Larrieu, Emmanuel Dubois, Jean-Pierre Raskin

Abstract: Primarily used as etch mask, single layer hydrogen silsesquioxane has never been investigated for lift-off technique. In this article, we propose a new technique where a single layer of hydrogen silsesquioxane, a negative tone electron beam resist, is used to make lift-off of germanium and platinum. Removal of exposed hydrogen silsesquioxane is tested for various concentrations of hydrofluoric aci… ▽ More Primarily used as etch mask, single layer hydrogen silsesquioxane has never been investigated for lift-off technique. In this article, we propose a new technique where a single layer of hydrogen silsesquioxane, a negative tone electron beam resist, is used to make lift-off of germanium and platinum. Removal of exposed hydrogen silsesquioxane is tested for various concentrations of hydrofluoric acid. Ultrasonic agitation is also used to reduce the formation of flakes due to accumulation of matter (evaporated metal in our case) along the sidewalls of the lift-off narrow slots. Results demonstrate potential in applying the hydrogen silsesquioxane as a negative tone lift-off resist to pattern nanometer scale features into germanium and platinum layers. △ Less

Submitted 23 September, 2011; originally announced September 2011.

Journal ref: Microelectronics Engineering 87, 10 (2009) 1872