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Formation of high-aspect-ratio nanocavity in LiF crystal using a femtosecond of x-ray FEL pulse
Authors:
Sergey S. Makarov,
Sergey A. Grigoryev,
Vasily V. Zhakhovsky,
Petr Chuprov,
Tatiana A. Pikuz,
Nail A. Inogamov,
Victor V. Khokhlov,
Yuri V. Petrov,
Eugene Perov,
Vadim Shepelev,
Takehisa Shobu,
Aki Tominaga,
Ludovic Rapp,
Andrei V. Rode,
Saulius Juodkazis,
Mikako Makita,
Motoaki Nakatsutsumi,
Thomas R. Preston,
Karen Appel,
Zuzana Konopkova,
Valerio Cerantola,
Erik Brambrink,
Jan-Patrick Schwinkendorf,
István Mohacsi,
Vojtech Vozda
, et al. (8 additional authors not shown)
Abstract:
Sub-picosecond optical laser processing of metals is actively utilized for modification of a heated surface layer. But for deeper modification of different materials a laser in the hard x-ray range is required. Here, we demonstrate that a single 9-keV x-ray pulse from a free-electron laser can form a um-diameter cylindrical cavity with length of ~1 mm in LiF surrounded by shock-transformed materia…
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Sub-picosecond optical laser processing of metals is actively utilized for modification of a heated surface layer. But for deeper modification of different materials a laser in the hard x-ray range is required. Here, we demonstrate that a single 9-keV x-ray pulse from a free-electron laser can form a um-diameter cylindrical cavity with length of ~1 mm in LiF surrounded by shock-transformed material. The plasma-generated shock wave with TPa-level pressure results in damage, melting and polymorphic transformations of any material, including transparent and non-transparent to conventional optical lasers. Moreover, cylindrical shocks can be utilized to obtain a considerable amount of exotic high-pressure polymorphs. Pressure wave propagation in LiF, radial material flow, formation of cracks and voids are analyzed via continuum and atomistic simulations revealing a sequence of processes leading to the final structure with the long cavity. Similar results can be produced with semiconductors and ceramics, which opens a new pathway for development of laser material processing with hard x-ray pulses.
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Submitted 5 September, 2024;
originally announced September 2024.
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Micro-Raman spectroscopy of ultrashort laser induced microexplosion sites in silicon
Authors:
L. A. Smillie,
M. Niihori,
L. Rapp,
B. Haberl,
J. S. Williams,
J. E. Bradby,
C. J. Pickard,
A. V. Rode
Abstract:
Confined microexplosions induced in silicon by powerful ultrashort laser pulses can lead to new Si phases. Some of these have not previously been observed via near-equilibrium compression of silicon. In this study, confocal Raman micro-spectroscopy and Raman imaging of arrays of microexplosions have been conducted to search for Raman signatures of these novel allotropes of silicon. A microexplosio…
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Confined microexplosions induced in silicon by powerful ultrashort laser pulses can lead to new Si phases. Some of these have not previously been observed via near-equilibrium compression of silicon. In this study, confocal Raman micro-spectroscopy and Raman imaging of arrays of microexplosions have been conducted to search for Raman signatures of these novel allotropes of silicon. A microexplosion is generated at the interface between a thick silicon dioxide confinement layer and underlying silicon. It is characterised by a void at the interface above a region of compressed silicon. Raman data show a rich assembly of silicon phases within the modified silicon. Residual stresses up to 4.5 GPa in the modifications have been determined from the shift in the main diamond-cubic Si Raman peak. The computed Raman spectra for a number of Si allotropes show reasonable agreement with the experimental spectra. Two structurally similar tetragonal phases of silicon (the rhombohedral r8 and the body-centred bc8) phases as well as recently identified bt8-Si are all highly likely to be contained in Raman spectra from many laser-modified sites. Although the st12-Si phase, previously observed in our electron diffraction studies of the highly compressively stressed laser-modified regions, was not reliably identified from Raman data, we suggest this could be due to the possible difference in residual stress level in the sites analysed by the electron diffraction and Raman spectra. Several other unidentified Raman peaks were observed, suggesting the presence of other unknown silicon phases. All of these silicon phases are expected to have attractive semiconducting properties including narrow band gap that open up novel applications.
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Submitted 31 March, 2020;
originally announced March 2020.
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Systematic extension of the Cahn-Hilliard model for motility-induced phase separation
Authors:
Lisa Rapp,
Fabian Bergmann,
Walter Zimmermann
Abstract:
We consider a continuum model for motility-induced phase separation (MIPS) of active Brownian particles [J. Chem. Phys. 142, 224149 (2015)]. Using a recently introduced perturbative analysis [Phys. Rev. E 98, 020604(R) (2018)], we show that this continuum model reduces to the classic Cahn-Hilliard (CH) model near the onset of MIPS. This makes MIPS another example of the so-called active phase sepa…
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We consider a continuum model for motility-induced phase separation (MIPS) of active Brownian particles [J. Chem. Phys. 142, 224149 (2015)]. Using a recently introduced perturbative analysis [Phys. Rev. E 98, 020604(R) (2018)], we show that this continuum model reduces to the classic Cahn-Hilliard (CH) model near the onset of MIPS. This makes MIPS another example of the so-called active phase separation. We further introduce a generalization of the perturbative analysis to the next higher order. This results in a generic higher order extension of the CH model for active phase separation. Our analysis establishes the mathematical link between the basic mean-field MIPS model on the one hand, and the leading order and extended CH models on the other hand. Comparing numerical simulations of the three models, we find that the leading order CH model agrees nearly perfectly with the full continuum model near the onset of MIPS. We also give estimates of the control parameter beyond which the higher order corrections become relevant and compare the extended CH model to recent phenomenological models.
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Submitted 11 January, 2019; v1 submitted 10 January, 2019;
originally announced January 2019.
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Pattern orientation in finite domains without boundaries
Authors:
Lisa Rapp,
Fabian Bergmann,
Walter Zimmermann
Abstract:
We investigate the orientation of nonlinear stripe patterns in finite domains. Motivated by recent experiments, we introduce a control parameter drop from supercritical inside a domain to subcritical outside without boundary conditions at the domain border. As a result, stripes align perpendicular to shallow control parameter drops. For steeper drops, non-adiabatic effects lead to a surprising ori…
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We investigate the orientation of nonlinear stripe patterns in finite domains. Motivated by recent experiments, we introduce a control parameter drop from supercritical inside a domain to subcritical outside without boundary conditions at the domain border. As a result, stripes align perpendicular to shallow control parameter drops. For steeper drops, non-adiabatic effects lead to a surprising orientational transition to parallel stripes with respect to the borders. We demonstrate this effect in terms of the Brusselator model and generic amplitude equations.
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Submitted 17 December, 2015;
originally announced December 2015.
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Photoluminescence from voids created by femtosecond laser pulses inside cubic-BN
Authors:
R. Buividas,
I. Aharonovich,
G. Seniutinas,
X. W. Wang,
L. Rapp,
A. V. Rode,
T. Taniguchi,
S. Juodkazis
Abstract:
Photoluminescence (PL) from femtosecond laser modified regions inside cubic-boron nitride (c-BN) was measured under UV and visible light excitation. Bright PL at the red spectral range was observed, with a typical excited state lifetime of $\sim 4$~ns. Sharp emission lines are consistent with PL of intrinsic vibronic defects linked to the nitrogen vacancy formation (via Frenkel pair) observed earl…
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Photoluminescence (PL) from femtosecond laser modified regions inside cubic-boron nitride (c-BN) was measured under UV and visible light excitation. Bright PL at the red spectral range was observed, with a typical excited state lifetime of $\sim 4$~ns. Sharp emission lines are consistent with PL of intrinsic vibronic defects linked to the nitrogen vacancy formation (via Frenkel pair) observed earlier in high energy electron irradiated and ion-implanted c-BN. These, formerly known as the radiation centers, RC1, RC2, and RC3 have been identified at the locus of the voids formed by single fs-laser pulse. The method is promising to engineer color centers in c-BN for photonic applications.
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Submitted 7 October, 2015;
originally announced October 2015.
