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Evidence for universal relationship between the measured 1/f permittivity noise and loss tangent created by tunneling atoms
Authors:
A. N. Ramanayaka,
B. Sarabi,
K. D. Osborn
Abstract:
Noise from atomic tunneling systems (TSs) limit the performance of various resonant devices, ranging in application from astronomy detectors to quantum computing. Using devices containing these TSs, we study the $1/f$ permittivity noise and loss tangent in two film types containing different TS densities. The noise reveals an intrinsic value as well as the crossover to power-saturated noise. The i…
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Noise from atomic tunneling systems (TSs) limit the performance of various resonant devices, ranging in application from astronomy detectors to quantum computing. Using devices containing these TSs, we study the $1/f$ permittivity noise and loss tangent in two film types containing different TS densities. The noise reveals an intrinsic value as well as the crossover to power-saturated noise. The intrinsic $1/f$ noise fits to the temperature dependence $1/T^{1+μ}$ where $0.2\leμ\le0.7$, which is related to previous studies and strongly interacting TS. An analysis of the noise normalized by the loss tangent and temperature is quantitatively identical for two film types, despite a factor of 5 difference in their loss tangent. Following from the broad applicability of the TS model, the data supports a universal relationship for amorphous-solid produced permittivity noise. The quantity of the observed noise particularly supports a recent model in which noise is created by weak TS-TS interactions.
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Submitted 21 July, 2015;
originally announced July 2015.
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Projected dipole moments of individual two-level defects extracted using circuit quantum electrodynamics
Authors:
Bahman Sarabi,
Aruna N. Ramanayaka,
Alexander L. Burin,
Frederick C. Wellstood,
Kevin D. Osborn
Abstract:
Material-based two-level systems (TLSs), appearing as defects in low-temperature devices including superconducting qubits and photon detectors, are difficult to characterize. In this study we apply a uniform dc-electric field across a film to tune the energies of TLSs within. The film is embedded in a superconducting resonator such that it forms a circuit quantum electrodynamical (cQED) system. Th…
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Material-based two-level systems (TLSs), appearing as defects in low-temperature devices including superconducting qubits and photon detectors, are difficult to characterize. In this study we apply a uniform dc-electric field across a film to tune the energies of TLSs within. The film is embedded in a superconducting resonator such that it forms a circuit quantum electrodynamical (cQED) system. The energy of individual TLSs is observed as a function of the known tuning field. By studying TLSs for which we can determine the tunneling energy, the actual $p_z$, dipole moments projected along the uniform field direction, are individually obtained. A distribution is created with 60 $p_z$. We describe the distribution using a model with two dipole moment magnitudes, and a fit yields the corresponding values $p=p_1= 2.8\pm 0.2$ Debye and $p=p_2=8.3\pm0.4$ Debye. For a strong-coupled TLS the vacuum-Rabi splitting can be obtained with $p_z$ and tunneling energy. This allows a measurement of the circuit's zero-point electric field fluctuations, in a method that does not need the electric-field volume.
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Submitted 5 April, 2016; v1 submitted 23 January, 2015;
originally announced January 2015.
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Superconducting TiN Films Sputtered over a Large Range of Substrate DC Bias
Authors:
H. M. Iftekhar Jaim,
J. A. Aguilar,
B. Sarabi,
Y. J. Rosen,
A. N. Ramanayaka,
E. H. Lock,
C. J. K. Richardson,
K. D. Osborn
Abstract:
We have investigated properties of superconducting titanium nitride (TiN) films that were sputtered over a large range of RF-induced DC bias voltage applied to the substrate. Films grown with the largest bias voltages contained cubic TiN phases with a large fraction of the (200) crystalline growth orientation. These films also contained the smallest concentrations of oxygen impurities, resulting i…
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We have investigated properties of superconducting titanium nitride (TiN) films that were sputtered over a large range of RF-induced DC bias voltage applied to the substrate. Films grown with the largest bias voltages contained cubic TiN phases with a large fraction of the (200) crystalline growth orientation. These films also contained the smallest concentrations of oxygen impurities, resulting in stoichiometric TiN. Over the range of bias, variations of the stress from slightly tensile to highly compressive were measured and correlated to crystallinity of the (200) growth. The films exhibited highly uniform thickness and resistivity, and show the potential for yielding reproducible low-temperature devices. Finally, coplanar resonators fabricated with the films exhibited high kinetic inductance and quality factor, where the latter was obtained in part from temperature-dependent frequency shifts.
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Submitted 24 October, 2014; v1 submitted 13 August, 2014;
originally announced August 2014.
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Cavity quantum electrodynamics using a near-resonance two-level system: emergence of the Glauber state
Authors:
Bahman Sarabi,
Aruna N. Ramanayaka,
Alexander L. Burin,
Frederick C. Wellstood,
Kevin D. Osborn
Abstract:
Random tunneling two-level systems (TLSs) in dielectrics have been of interest recently because they adversely affect the performance of superconducting qubits. The coupling of TLSs to qubits has allowed individual TLS characterization, which has previously been limited to TLSs within (thin) Josephson tunneling barriers made from aluminum oxide. Here we report on the measurement of an individual T…
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Random tunneling two-level systems (TLSs) in dielectrics have been of interest recently because they adversely affect the performance of superconducting qubits. The coupling of TLSs to qubits has allowed individual TLS characterization, which has previously been limited to TLSs within (thin) Josephson tunneling barriers made from aluminum oxide. Here we report on the measurement of an individual TLS within the capacitor of a lumped-element LC microwave resonator, which forms a cavity quantum electrodynamics (CQED) system and allows for individual TLS characterization in a different structure and material than demonstrated with qubits. Due to the reduced volume of the dielectric (80 $μ$m$^{3}$), even with a moderate dielectric thickness (250 nm), we achieve the strong coupling regime as evidenced by the vacuum Rabi splitting observed in the cavity spectrum. A TLS with a coherence time of 3.2 $μ$s was observed in a film of silicon nitride as analyzed with a Jaynes-Cummings spectral model, which is larger than seen from superconducting qubits. As the drive power is increased, we observe an unusual but explicable set of continuous and discrete crossovers from the vacuum Rabi split transitions to the Glauber (coherent) state.
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Submitted 24 March, 2015; v1 submitted 1 May, 2014;
originally announced May 2014.
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Effect of rotation of the polarization of linearly polarized microwaves on the radiation-induced magnetoresistance oscillations
Authors:
A. N. Ramanayaka,
R. G. Mani,
J. Iñarrea,
W. Wegscheider
Abstract:
Light-matter coupling is investigated by rotating, by an angle θ, the polarization of linearly polarized microwaves with respect to the long-axis of GaAs/AlGaAs Hall-bar electron devices. At low microwave power, P, experiments show a strong sinusoidal variation in the diagonal resistance R_{xx} vs. θat the oscillatory extrema, indicating a linear polarization sensitivity in the microwave radiation…
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Light-matter coupling is investigated by rotating, by an angle θ, the polarization of linearly polarized microwaves with respect to the long-axis of GaAs/AlGaAs Hall-bar electron devices. At low microwave power, P, experiments show a strong sinusoidal variation in the diagonal resistance R_{xx} vs. θat the oscillatory extrema, indicating a linear polarization sensitivity in the microwave radiation-induced magnetoresistance oscillations. Surprisingly, the phase shift θ_{0} for maximal oscillatory R_{xx} response under photoexcitation appears dependent upon the radiation-frequency f, the extremum in question, and the magnetic field orientation or sgn(B).
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Submitted 25 September, 2012;
originally announced September 2012.
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Observation of linear-polarization-sensitivity in the microwave-radiation-induced magnetoresistance oscillations
Authors:
R. G. Mani,
A. N. Ramanayaka,
W. Wegscheider
Abstract:
In the quasi two-dimensional GaAs/AlGaAs system, we investigate the effect of rotating \textit{in-situ} the electric field of linearly polarized microwaves relative to the current, on the microwave-radiation-induced magneto-resistance oscillations. We find that the frequency and the phase of the photo-excited magneto-resistance oscillations are insensitive to the polarization. On the other hand, t…
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In the quasi two-dimensional GaAs/AlGaAs system, we investigate the effect of rotating \textit{in-situ} the electric field of linearly polarized microwaves relative to the current, on the microwave-radiation-induced magneto-resistance oscillations. We find that the frequency and the phase of the photo-excited magneto-resistance oscillations are insensitive to the polarization. On the other hand, the amplitudes of the magnetoresistance oscillations are remarkably responsive to the relative orientation between the microwave antenna and the current-axis in the specimen. The results suggest a striking linear-polarization-sensitivity in the radiation-induced magnetoresistance oscillations.
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Submitted 23 September, 2012;
originally announced September 2012.
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Microwave-induced electron heating in the regime of radiation-induced magnetoresistance oscillations
Authors:
A. N. Ramanayaka,
R. G. Mani,
W. Wegscheider
Abstract:
We examine the influence of microwave photoexcitation on the amplitude of Shubnikov-de Haas (SdH) oscillations in a two dimensional GaAs/AlGaAs electron system in a regime where the cyclotron frequency, $ω_{c}$, and the microwave angular frequency, $ω$, satisfy $2 ω\le ω_{c} \le 3.5 ω$. A SdH lineshape analysis indicates that increasing the incident microwave power has a weak effect on the amplitu…
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We examine the influence of microwave photoexcitation on the amplitude of Shubnikov-de Haas (SdH) oscillations in a two dimensional GaAs/AlGaAs electron system in a regime where the cyclotron frequency, $ω_{c}$, and the microwave angular frequency, $ω$, satisfy $2 ω\le ω_{c} \le 3.5 ω$. A SdH lineshape analysis indicates that increasing the incident microwave power has a weak effect on the amplitude of the SdH oscillations, in comparison to the influence of modest temperature changes on the dark-specimen SdH effect. The results indicate negligible electron heating under modest microwave photoexcitation, in good agreement with theoretical predictions.
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Submitted 1 February, 2011;
originally announced February 2011.
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Transport study of Berry's phase, the resistivity rule, and quantum Hall effect in graphite
Authors:
Aruna N. Ramanayaka,
R. G. Mani
Abstract:
Transport measurements indicate strong oscillations in the Hall-,$R_{xy}$, and the diagonal-, $R_{xx}$, resistances and exhibit Hall plateaus at the lowest temperatures, in three-dimensional Highly Oriented Pyrolytic Graphite (HOPG). At the same time, a comparative Shubnikov-de Haas-oscillations-based Berry's phase analysis indicates that graphite is unlike the GaAs/AlGaAs 2D electron system, the…
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Transport measurements indicate strong oscillations in the Hall-,$R_{xy}$, and the diagonal-, $R_{xx}$, resistances and exhibit Hall plateaus at the lowest temperatures, in three-dimensional Highly Oriented Pyrolytic Graphite (HOPG). At the same time, a comparative Shubnikov-de Haas-oscillations-based Berry's phase analysis indicates that graphite is unlike the GaAs/AlGaAs 2D electron system, the 3D n-GaAs epilayer, semiconducting $Hg_{0.8}Cd_{0.2}Te$, and some other systems. Finally, we observe the transport data to follow $B\times dR_{xy}/dB \approx - ΔR_{xx}$. This feature is consistent with the observed relative phases of the oscillatory $R_{xx}$ and $R_{xy}$.
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Submitted 4 October, 2010;
originally announced October 2010.
