Showing 1–9 of 9 results for author: Ramírez, O

Electron density modulation in monolayer $MoS_{2}$ along the phase transition of a relaxor ferroelectric substrate

Authors: D. Hernández-Pinilla, D. Cachago, Y. A. Xia, G. López-Polín, M. O Ramírez, L. E. Bausá

Abstract: The integration of transition metal dichalcogenides (TMDs) with ferroelectric substrates is a powerful strategy to modulate their electronic and optical properties. However, the use of relaxor ferroelectrics for this purpose remains unexplored. Here, we demonstrate a reversible photoluminescence (PL) and charge density modulation of monolayer $MoS_{2}$ on a $Sr_{0.61}Ba_{0.39}Nb_{2}O_{6}$ (SBN) su… ▽ More The integration of transition metal dichalcogenides (TMDs) with ferroelectric substrates is a powerful strategy to modulate their electronic and optical properties. However, the use of relaxor ferroelectrics for this purpose remains unexplored. Here, we demonstrate a reversible photoluminescence (PL) and charge density modulation of monolayer $MoS_{2}$ on a $Sr_{0.61}Ba_{0.39}Nb_{2}O_{6}$ (SBN) substrate, a prototypical relaxor ferroelectric. The smearing of the phase transition in SBN enables continuous tuning of $MoS_{2}$ electronic properties over a broad temperature range ($30-90°C$). A pronounced PL enhancement occurs as the substrate transitions from ferro-to-paraelectric phase due to the vanishing spontaneous polarization and the consequent change in charge balance at the $MoS_{2}-SBN$ interface. Moreover, thermal hysteresis in the electron density modulation is observed during heating and cooling cycles. These findings highlight the potential of relaxor ferroelectrics as reconfigurable platforms for electron doping and light-emission control in 2D materials, opening avenues for temperature-responsive optoelectronic and nanophotonic applications. △ Less

Submitted 5 May, 2025; originally announced May 2025.

Comments: 16 pages, 5 figures

Pyroelectric doping reversal of MoS2 p-n junctions on ferroelectric domain walls probed by photoluminescence

Authors: Javier Fernández-Martínez, Joan J. Ronquillo, Guillermo López-Polín, Herko P. van der Meulen, Mariola O Ramírez, Luisa E. Bausá

Abstract: Tailoring the optical properties and electronic doping in transition metal dichalcogenides (TMDs) is a central strategy for developing innovative systems with tunable characteristics. In this context, pyroelectric materials, which hold the capacity for charge generation when subjected to temperature changes, offer a promising route for this modulation. This work employs spatially resolved photolum… ▽ More Tailoring the optical properties and electronic doping in transition metal dichalcogenides (TMDs) is a central strategy for developing innovative systems with tunable characteristics. In this context, pyroelectric materials, which hold the capacity for charge generation when subjected to temperature changes, offer a promising route for this modulation. This work employs spatially resolved photoluminescence (PL) to explore the impact of pyroelectricity on the electronic doping of monolayer MoS2 deposited on periodically poled LiNbO3 (LN) substrates. The results demonstrate that pyroelectricity in LN modulates the charge carrier density in MoS2 on ferroelectric surfaces acting as doping mechanism without the need for gating electrodes. Furthermore, upon cooling, pyroelectric charges effectively reverse the doping of p-n junctions on DWs, converting them into n-p junctions. These findings highlight the potential of pyroelectric substrates for tunable and configurable charge engineering in transition metal dichalcogenides and suggest their applicability to other combinations of 2D materials and ferroelectric substrates. They also open avenues for alternative device architectures in nanoelectronic or nanophotonic devices including switches, memories or sensors. △ Less

Submitted 8 April, 2025; v1 submitted 7 April, 2025; originally announced April 2025.

Comments: 16 pages, 6 figures

On the origin of tail states and VOC losses in Cu(In,Ga)Se2

Authors: Omar Ramírez, Jiro Nishinaga, Felix Dingwell, Taowen Wang, Aubin Prot, Max Hilaire Wolter, Vibha Ranjan, Susanne Siebentritt

Abstract: The detrimental effect of tail states on the radiative and non-radiative voltage loss has been demonstrated to be a limiting factor for the open circuit voltage in Cu(In,Ga)Se2 solar cells. A strategy that has proven effective in reducing tail states is the addition of alkali metals, the effect of which has been associated with the passivation of charged defects at grain boundaries. Herein, tail s… ▽ More The detrimental effect of tail states on the radiative and non-radiative voltage loss has been demonstrated to be a limiting factor for the open circuit voltage in Cu(In,Ga)Se2 solar cells. A strategy that has proven effective in reducing tail states is the addition of alkali metals, the effect of which has been associated with the passivation of charged defects at grain boundaries. Herein, tail states in Cu(In,Ga)Se2 are revisited by studying the effect of compositional variations and alkali incorporation into single crystals. The results demonstrate that alkalis decrease the density of tail states despite the absence of grain boundaries, suggesting that there is more to alkalis than just grain boundary effects. Moreover, an increase in doping as a result of alkali incorporation is shown to contribute to the reduced tail states, which are demonstrated to arise largely from electrostatic potential fluctuations and to be determined by grain interior properties. By analyzing the voltage loss in high-efficiency polycrystalline and single crystalline devices, this work presents a model that explains the entirety of the voltage loss in Cu(In,Ga)Se2 based on the combined effect of doping on tail states and VOC. △ Less

Submitted 3 December, 2022; originally announced December 2022.

Metastable defects decrease the fill factor of solar cells

Authors: Thomas Paul Weiss, Omar Ramírez, Stefan Paetel, Wolfram Witte, Jiro Nishinaga, Thomas Feurer, Susanne Siebentritt

Abstract: Cu(In,Ga)Se2 based solar cells exceed power conversion efficiencies of 23 %. Yet, the fill factor of these solar cells, with best values around 80 %, is relatively low (Si reaches 84.9%) mostly due to diode factors greater than one. Recently, we proposed metastable defects, a general feature of the Cu(In,Ga)Se2 alloy, to be the origin of the increased diode factor. We measure the diode factor of t… ▽ More Cu(In,Ga)Se2 based solar cells exceed power conversion efficiencies of 23 %. Yet, the fill factor of these solar cells, with best values around 80 %, is relatively low (Si reaches 84.9%) mostly due to diode factors greater than one. Recently, we proposed metastable defects, a general feature of the Cu(In,Ga)Se2 alloy, to be the origin of the increased diode factor. We measure the diode factor of the bare absorber layers by excitation-dependent photoluminescence. For high quality and thus high luminescent polycrystalline absorbers, we evaluate the diode factor excitation dependence over four orders of magnitude. Using simulations and the model of metastable defects, we can well describe the experimental findings on n- and p-type epitaxial films as well as the polycrystalline absorbers, providing additional evidence for this model. We find that the diode factors measured optically by photoluminescence impose a lower limit for the diode factor measured electrically on a finished solar cell. Interestingly, the lowest diode factor (optical and electrical) and consequently highest fill factor of 81.0 % is obtained by Ag alloying, i.e. an (Ag,Cu)(In,Ga)Se2 absorber. This finding hints to a pathway to increase fill factors and thus efficiencies for Cu(In,Ga)Se2-based solar cells. △ Less

Submitted 26 April, 2022; originally announced May 2022.

How much gallium do we need for a p-type Cu(In,Ga)Se2?

Authors: Omar Ramírez, Evandro Martin Lanzoni, Ricardo G. Poeira, Thomas P. Weiss, Renaud Leturcq, Alex Redinger, Susanne Siebentritt

Abstract: Doping in the chalcopyrite Cu(In,Ga)Se2 is determined by intrinsic point defects. In the ternary CuInSe2, both N-type and P-type conductivity can be obtained depending on the growth conditions and stoichiometry: N-type is obtained when grown Cu-poor, Se-poor and alkali-free. CuGaSe2, on the other hand, is found to be always a P-type semiconductor that seems to resist all kinds of N-type doping no… ▽ More Doping in the chalcopyrite Cu(In,Ga)Se2 is determined by intrinsic point defects. In the ternary CuInSe2, both N-type and P-type conductivity can be obtained depending on the growth conditions and stoichiometry: N-type is obtained when grown Cu-poor, Se-poor and alkali-free. CuGaSe2, on the other hand, is found to be always a P-type semiconductor that seems to resist all kinds of N-type doping no matter whether it comes from native defects or extrinsic impurities. In this contribution, we study the N-to-P transition in Cu-poor Cu(In,Ga)Se2 single crystals in dependence of the gallium content. Our results show that Cu(In,Ga)Se2 can still be grown as an N-type semiconductor until the gallium content reaches the critical concentration of 15-19%, where the N-to-P transition occurs. Furthermore, trends in the Seebeck coefficient and activation energies extracted from temperature-dependent conductivity measurements, demonstrate that the carrier concentration drops by around two orders of magnitude near the transition concentration. Our proposed model explains the N-to-P transition based on the differences in formation energies of donor and acceptor defects caused by the addition of gallium. △ Less

Submitted 27 April, 2022; originally announced April 2022.

The impact of Kelvin probe force microscopy operation modes and environment on grain boundary band bending in perovskite and Cu(In,Ga)Se2 solar cells

Authors: Evandro Martin Lanzoni, Thibaut Gallet, Conrad Spindler, Omar Ramirez, Christian Kameni Boumenou, Susanne Siebentritt, Alex Redinger

Abstract: An in-depth understanding of the electronic properties of grain boundaries (GB) in polycrystalline semiconductor absorbers is of high importance since their charge carrier recombination rates may be very high and hence limit the solar cell device performance. Kelvin Probe Force Microscopy (KPFM) is the method of choice to investigate GB band bending on the nanometer scale and thereby helps to deve… ▽ More An in-depth understanding of the electronic properties of grain boundaries (GB) in polycrystalline semiconductor absorbers is of high importance since their charge carrier recombination rates may be very high and hence limit the solar cell device performance. Kelvin Probe Force Microscopy (KPFM) is the method of choice to investigate GB band bending on the nanometer scale and thereby helps to develop passivation strategies. Here, it is shown that amplitude modulation AM-KPFM, which is by far the most common KPFM measurement mode, is not suitable to measure workfunction variations at GBs on rough samples, such as Cu(In,Ga)Se2 and CH3NH3PbI3. This is a direct consequence of a change in the cantilever-sample distance that varies on rough samples. Furthermore, we critically discuss the impact of different environments (air versus vacuum) and show that air exposure alters the GB and facet contrast, which leads to erroneous interpretations of the GB physics. Frequency modulation FM-KPFM measurements on non-air-exposed CIGSe and perovskite absorbers show that the amount of band bending measured at the GB is negligible and that the electronic landscape of the semiconductor surface is dominated by facet-related contrast due to the polycrystalline nature of the absorbers. △ Less

Submitted 7 April, 2021; originally announced April 2021.

Spin-Charge-Lattice Coupling through Resonant Multi-Magnon Excitations in Multiferroic BiFeO3

Authors: M. O. Ramirez, A. Kumar, S. A. Denev, Y. H. Chu, J. Seidel, L. Martin, S-Y. Yang R. C. Rai, X. Xue, J. F. Ihlefeld, N. Podraza, E. Saiz, S. Lee, J. Klug, S. W. Cheong, M. J. Bedzyk, O. Auciello, D. G. Schlom, J. Orenstein, R. Ramesh, J. L. Musfeldt, A. P. Litvinchuk, V. Gopalan

Abstract: Spin-charge-lattice coupling mediated by multi-magnon processes is demonstrated in multiferroic BiFeO3. Experimental evidence of two and three magnons excitations as well as multimagnon coupling at electronic energy scales and high temperatures are reported. Temperature dependent Raman experiments show up to five resonant enhancements of the 2-magnon excitation below the Neel temperature. These… ▽ More Spin-charge-lattice coupling mediated by multi-magnon processes is demonstrated in multiferroic BiFeO3. Experimental evidence of two and three magnons excitations as well as multimagnon coupling at electronic energy scales and high temperatures are reported. Temperature dependent Raman experiments show up to five resonant enhancements of the 2-magnon excitation below the Neel temperature. These are shown to be collective interactions between on-site Fe d-d electronic resonance, phonons and multimagnons △ Less

Submitted 7 January, 2009; v1 submitted 24 March, 2008; originally announced March 2008.

Comments: 11 pages including figures

Three-Dimensional Grain Boundary Spectroscopy in Transparent High Power Ceramic Laser Materials

Authors: Mariola O. Ramirez, Jeffrey Wisdom, Haifeng Li, Yan Lin Aung, Joseph Stitt, Gary L. Messing, V. Dierolf, Zhiwen Liu, Akio Ikesue, Robert L. Byer, Venkatraman Gopalan

Abstract: Using confocal Raman and fluorescence spectroscopic imaging in 3-dimensions, we show direct evidence for Nd3+-Nd3+ interactions across grain boundaries (GBs) in Nd3+:YAG laser ceramics. It is clearly shown that Nd3+ segregation takes place at GBs leading to self-fluorescence quenching which affects a volume fraction as high as 20%. In addition, we show a clear trend of increasing spatial inhomog… ▽ More Using confocal Raman and fluorescence spectroscopic imaging in 3-dimensions, we show direct evidence for Nd3+-Nd3+ interactions across grain boundaries (GBs) in Nd3+:YAG laser ceramics. It is clearly shown that Nd3+ segregation takes place at GBs leading to self-fluorescence quenching which affects a volume fraction as high as 20%. In addition, we show a clear trend of increasing spatial inhomogeneities in Nd3+ concentration when the doping levels exceeds 3 at%, which is not detected by standard spectrometry techniques. These results could point the way to further improvements in what is already an impressive class of ceramic laser materials. △ Less

Submitted 24 March, 2008; originally announced March 2008.

Comments: 8 pages including Figures. submitted to Optics Express (Nov 07)

Two-phonon coupling to the antiferromagnetic phase transition in multiferroic BiFeO3

Authors: Mariola O. Ramirez, M. Krishnamurthi, S. Denev, A. Kumar, Seung-Yeul Yang, Ying-Hao Chu, Eduardo Saiz, Jan Seidel, A. P Pyatakov, A. Bush, D. Viehland, J. Orenstein, R. Ramesh, Venkatraman Gopalan

Abstract: A prominent band centered at around 1000-1300 cm-1 and associated with resonant enhancement of two-phonon Raman scattering is reported in multiferroic BiFeO3 thin films and single crystals. A strong anomaly in this band occurs at the antiferromagnetic Neel temperature. This band is composed of three peaks, assigned to 2A4, 2E8, and 2E9 Raman modes. While all three peaks were found to be sensitiv… ▽ More A prominent band centered at around 1000-1300 cm-1 and associated with resonant enhancement of two-phonon Raman scattering is reported in multiferroic BiFeO3 thin films and single crystals. A strong anomaly in this band occurs at the antiferromagnetic Neel temperature. This band is composed of three peaks, assigned to 2A4, 2E8, and 2E9 Raman modes. While all three peaks were found to be sensitive to the antiferromagnetic phase transition, the 2E8 mode, in particular, nearly disappears at TN on heating, indicating a strong spin-two phonon coupling in BiFeO3. △ Less

Submitted 3 December, 2007; originally announced December 2007.

Comments: 12 pages with figures