Interplay between Raman shift and thermal expansion in graphene: temperature-dependent measurements and analysis of substrate corrections
Authors:
S. Linas,
Y. Magnin,
B. Poinsot,
O. Boisron,
G. D. Forster,
Z. Han,
D. Kalita,
V. Bouchiat,
V. Martinez,
R. Fulcrand,
F. Tournus,
V. Dupuis,
F. Rabilloud,
L. Bardotti,
F. Calvo
Abstract:
Measurements and calculations have shown significant disagreement regarding the sign and variations of the thermal expansion coefficient (TEC) of graphene $α(T)$. Here we report dedicated Raman scattering experiments conducted for graphene monolayers deposited on silicon nitride substrates and over the broad temperature range 150--900~K. The relation between those measurements for the G band and t…
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Measurements and calculations have shown significant disagreement regarding the sign and variations of the thermal expansion coefficient (TEC) of graphene $α(T)$. Here we report dedicated Raman scattering experiments conducted for graphene monolayers deposited on silicon nitride substrates and over the broad temperature range 150--900~K. The relation between those measurements for the G band and the graphene TEC, which involves correcting the measured signal for the mismatch contribution of the substrate, is analyzed based on various theoretical candidates for $α(T)$. Contrary to calculations in the quasiharmonic approximation, a many-body potential reparametrized for graphene correctly reproduces experimental data. These results indicate that the TEC is more likely to be positive above room temperature.
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Submitted 28 November, 2014;
originally announced November 2014.
