Showing 1–8 of 8 results for author: Røst, H I

Tailoring the Electronic Structure of Ni(111) by Alloying with Sb Ad-Atoms

Authors: Anna Cecilie Åsland, Alv Johan Skarpeid, Matthias Hartl, Marte Stalsberg, Adrian N. Rørheim, Johannes Bakkelund, Jinbang Hu, Zheshen Li, Simon P. Cooil, Justin W. Wells, Håkon I. Røst

Abstract: Surface alloying can alter surface electronic and magnetic properties, which are key parameters when developing new materials tailored for specific applications. A magnetic surface alloy was formed by depositing Sb on Ni(111) at elevated temperatures, yielding new electronic states at the Fermi level and modifying the Ni-derived bandstructure. In particular, it changed the electron occupancy of th… ▽ More Surface alloying can alter surface electronic and magnetic properties, which are key parameters when developing new materials tailored for specific applications. A magnetic surface alloy was formed by depositing Sb on Ni(111) at elevated temperatures, yielding new electronic states at the Fermi level and modifying the Ni-derived bandstructure. In particular, it changed the electron occupancy of the spin-polarized surface resonance bands, which may affect the magnetic properties of the surface and its associated many-body effects. By fitting a finite element model to angle-dependent core level measurements, similar amounts of Sb and Ni were found within the first few atomic layers to indicate a near-surface composition similar to the bulk alloy NiSb. Annealing to higher temperatures post-growth further improved the crystalline quality of the surface. Our investigation of the surface alloy's crystallinity, chemical composition, and layer structure lays the basis for future studies of how its electronic and magnetic properties can be modified. △ Less

Submitted 19 March, 2025; originally announced March 2025.

Direct measurement of 2DEG states in shallow Si:Sb $δ$-layers

Authors: Frode S. Strand, Simon P. Cooil, Quinn T. Campbell, John J. Flounders, Håkon I. Røst, Anna Cecilie Åsland, Alv Johan Skarpeid, Marte P. Stalsberg, Jinbang Hu, Johannes Bakkelund, Victoria Bjelland, Alexei B. Preobrajenski, Zheshen Li, Marco Bianchi, Jill A. Miwa, Justin W. Wells

Abstract: We investigate the electronic structure of high-density layers of Sb dopants in a silicon host, so-called Si:Sb $δ$-layers. We show that, in spite of the known challenges in producing highly confined Sb $δ$-layers, sufficient confinement is created such that the lowest conduction band states ($Γ$ states, studied in depth in other silicon $δ$-layers), become occupied and can be observed using angle… ▽ More We investigate the electronic structure of high-density layers of Sb dopants in a silicon host, so-called Si:Sb $δ$-layers. We show that, in spite of the known challenges in producing highly confined Sb $δ$-layers, sufficient confinement is created such that the lowest conduction band states ($Γ$ states, studied in depth in other silicon $δ$-layers), become occupied and can be observed using angle-resolved photoemission spectroscopy. The electronic structure of the Si:Sb $δ$-layers closely resembles that of Si:P systems, where the observed conduction band is near-parabolic and slightly anisotropic in the $\mathbf{k}_\parallel$ plane. The observed $Γ$ state extends ~ 1 nm in the out-of-plane direction, which is slightly wider than the 1/3 monolayer thick dopant distribution. This is caused by a small segregation of the dopant layer, which is nevertheless minimal when comparing with earlier published attempts. Our results serve to demonstrate that Sb is still a feasible dopant alternative for use in the semiconductor $δ$-layer platform, providing similar electronic functionality to Si:P systems. Additionally, it has the advantages of being less expensive, more controllable, safer to handle, and more compatible with industrial patterning techniques. Si:Sb is therefore a viable platform for emerging quantum device applications. △ Less

Submitted 22 October, 2024; originally announced October 2024.

Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride

Authors: Håkon I. Røst, Simon P. Cooil, Anna Cecilie Åsland, Jinbang Hu, Ayaz Ali, Takashi Taniguchi, Kenji Watanabe, Branson D. Belle, Bodil Holst, Jerzy T. Sadowski, Federico Mazzola, Justin W. Wells

Abstract: Understanding the collective behavior of the quasiparticles in solid-state systems underpins the field of non-volatile electronics, including the opportunity to control many-body effects for well-desired physical phenomena and their applications. Hexagonal boron nitride (hBN) is a wide energy bandgap semiconductor, showing immense potential as a platform for low-dimensional device heterostructures… ▽ More Understanding the collective behavior of the quasiparticles in solid-state systems underpins the field of non-volatile electronics, including the opportunity to control many-body effects for well-desired physical phenomena and their applications. Hexagonal boron nitride (hBN) is a wide energy bandgap semiconductor, showing immense potential as a platform for low-dimensional device heterostructures. It is an inert dielectric used for gated devices, having a negligible orbital hybridization when placed in contact with other systems. Despite its inertness, we discover a large electron mass enhancement in few-layer hBN affecting the lifetime of the $π$-band states. We show that the renormalization is phonon-mediated and consistent with both single- and multiple-phonon scattering events. Our findings thus unveil a so-far unknown many-body state in a wide-bandgap insulator, having important implications for devices using hBN as one of their building blocks. △ Less

Submitted 26 August, 2023; originally announced August 2023.

Comments: This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nano Letters, copyright $©$ 2022 The Authors, licensed under CC-BY 4.0 after peer review. To access the final edited and published work see https://doi.org/10.1021/acs.nanolett.3c02086

Journal ref: Nano Lett. 23, 16 (2023), 7539-7545

Probing the Atomic Arrangement of Sub-Surface Dopants in a Silicon Quantum Device Platform

Authors: Håkon I. Røst, Ezequiel Tosi, Frode S. Strand, Anna Cecilie Åsland, Paolo Lacovig, Silvano Lizzit, Justin W. Wells

Abstract: High-density structures of sub-surface phosphorus dopants in silicon continue to garner interest as a silicon-based quantum computer platform, however, a much-needed confirmation of their dopant arrangement has been lacking. In this work, we take advantage of the chemical specificity of X-ray photoelectron diffraction to obtain the precise structural configuration of P dopants in sub-surface Si:P… ▽ More High-density structures of sub-surface phosphorus dopants in silicon continue to garner interest as a silicon-based quantum computer platform, however, a much-needed confirmation of their dopant arrangement has been lacking. In this work, we take advantage of the chemical specificity of X-ray photoelectron diffraction to obtain the precise structural configuration of P dopants in sub-surface Si:P $δ$-layers. The growth of $δ$-layer systems with different levels of doping is carefully studied and verified using X-ray photoelectron spectroscopy and low-energy electron diffraction. Subsequent XPD measurements reveal that in all cases, the dopants primarily substitute with Si atoms from the host material. Furthermore, no signs of free carrier-inhibiting P$-$P dimerization can be observed. Our observations not only settle a nearly decade-long debate about the dopant arrangement but also demonstrate that XPD is well suited to study sub-surface dopant structures. This work thus provides valuable input for an updated understanding of the behavior of Si:P $δ$-layers and the modeling of their derived quantum devices. △ Less

Submitted 18 November, 2022; originally announced November 2022.

Journal ref: ACS Appl. Mater. Interfaces 15, 18 (2023), 22637-22643

Disentangling Electron-Boson Interactions on the Surface of a Familiar Ferromagnet

Authors: Håkon I. Røst, Federico Mazzola, Johannes Bakkelund, Anna Cecilie Åsland, Jinbang Hu, Simon P. Cooil, Craig M. Polley, Justin W. Wells

Abstract: We report energy renormalizations from electron-phonon and electron-magnon interactions in spin minority surface resonances on Ni(111). The different interactions are identified, disentangled, and quantified from the characteristic signatures they provide to the complex self-energy and the largely different binding energies at which they occur. The observed electron-magnon interactions exhibit a s… ▽ More We report energy renormalizations from electron-phonon and electron-magnon interactions in spin minority surface resonances on Ni(111). The different interactions are identified, disentangled, and quantified from the characteristic signatures they provide to the complex self-energy and the largely different binding energies at which they occur. The observed electron-magnon interactions exhibit a strong dependence on momentum and energy band position in the bulk Brillouin zone. In contrast, electron-phonon interactions from the same bands appear to be relatively momentum- and symmetry-independent. Additionally, a moderately strong ($λ>0.5$) electron-phonon interaction is distinguished from a near-parabolic spin majority band not crossing the Fermi level. △ Less

Submitted 5 December, 2023; v1 submitted 2 November, 2022; originally announced November 2022.

Journal ref: Phys. Rev. B 109, 035137 (2024)

One-Dimensional Spin-Polarised Surface States -- A Comparison of Bi(112) with Other Vicinal Bismuth Surfaces

Authors: Anna Cecilie Åsland, Johannes Bakkelund, Even Thingstad, Håkon I. Røst, Simon P. Cooil, Jinbang Hu, Ivana Vobornik, Jun Fujii, Asle Sudbø, Justin W. Wells, Federico Mazzola

Abstract: Vicinal surfaces of bismuth are unique test-beds for investigating one-dimensional (1D) spin-polarised surface states that may one day be used in spintronic devices. In this work, two such states have been observed for the (112) surface when measured using angle-resolved photoemission spectroscopy (ARPES) and spin-resolved ARPES, and when calculated using a tight-binding (TB) model and with densit… ▽ More Vicinal surfaces of bismuth are unique test-beds for investigating one-dimensional (1D) spin-polarised surface states that may one day be used in spintronic devices. In this work, two such states have been observed for the (112) surface when measured using angle-resolved photoemission spectroscopy (ARPES) and spin-resolved ARPES, and when calculated using a tight-binding (TB) model and with density functional theory (DFT). The surface states appear as elongated Dirac-cones which are 1D and almost dispersionless in the ${k}_{\text{y}}$-direction, but disperse with energy in the orthogonal ${k}_{\text{x}}$-direction to form two ``$\times$''-like features centered at the ${k}_{\text{y}}$-line through $Γ$. Unlike many materials considered for spintronic applications, their 1D nature suggests that conductivity and spin-transport properties are highly dependent on direction. The spin-polarisation of the surface states is mainly in-plane and parallel to the 1D state, but there are signs of a tilted out-of-plane spin-component for one of them. The Bi(112) surface states resemble those found for other vicinal surfaces of bismuth, strongly indicating that their existence and general properties are robust properties of vicinal surfaces of bismuth. Furthermore, differences in the details of the states, particularly related to their spin-polarisation, suggest that spin-transport properties may be engineered simply by precise cutting and polishing of the crystal. △ Less

Submitted 19 October, 2022; originally announced October 2022.

Comments: 8 pages, 4 figures + supplemental material. To be submitted to PRB

Electron-magnon coupling and quasiparticle lifetimes on the surface of a topological insulator

Authors: Kristian Mæland, Håkon I. Røst, Justin W. Wells, Asle Sudbø

Abstract: The fermionic self-energy on the surface of a topological insulator proximity coupled to ferro- and antiferromagnetic insulators is studied. An enhanced electron-magnon coupling is achieved by allowing the electrons on the surface of the topological insulator to have a different exchange coupling to the two sublattices of the antiferromagnet. Such a system is therefore seen as superior to a ferrom… ▽ More The fermionic self-energy on the surface of a topological insulator proximity coupled to ferro- and antiferromagnetic insulators is studied. An enhanced electron-magnon coupling is achieved by allowing the electrons on the surface of the topological insulator to have a different exchange coupling to the two sublattices of the antiferromagnet. Such a system is therefore seen as superior to a ferromagnetic interface for the realization of magnon-mediated superconductivity. The increased electron-magnon-coupling simultaneously increases the self-energy effects. In this paper we show how the inverse quasiparticle lifetime and energy renormalization on the surface of the topological insulator can be kept low close to the Fermi level by using a magnetic insulator with a sufficient easy-axis anisotropy. We find that the antiferromagnetic case is most interesting from both a theoretical and an experimental standpoint due to the increased electron-magnon coupling, combined with a reduced need for easy-axis anisotropy compared to the ferromagnetic case. We also consider a set of material and instrumental parameters where these self-energies should be measurable in angle-resolved photoemission spectroscopy experiments, paving the way for a measurement of the interfacial exchange coupling strength. △ Less

Submitted 18 September, 2021; v1 submitted 30 June, 2021; originally announced July 2021.

Comments: 14 pages, 9 figures, accepted in Physical Review B

Report number: QuSpin 2021

Journal ref: Phys. Rev. B 104, 125125 (2021)

Low Temperature Growth of Graphene on Semiconductor

Authors: Håkon I. Røst, Rajesh K. Chellappan, Frode S. Strand, Antonija Grubišić-Čabo, Benjamen P. Reed, Mauricio J. Prieto, Liviu C. Tǎnase, Lucas de Souza Caldas, Thipusa Wongpinij, Chanan Euaruksakul, Thomas Schmidt, Anton Tadich, Bruce C. C. Cowie, Zheshen Li, Simon P. Cooil, Justin W. Wells

Abstract: The industrial realization of graphene has so far been limited by challenges related to the quality, reproducibility, and high process temperatures required to manufacture graphene on suitable substrates. We demonstrate that epitaxial graphene can be grown on transition metal treated 6H-SiC(0001) surfaces, with an onset of graphitization starting around $450-500^\circ\text{C}$. From the chemical r… ▽ More The industrial realization of graphene has so far been limited by challenges related to the quality, reproducibility, and high process temperatures required to manufacture graphene on suitable substrates. We demonstrate that epitaxial graphene can be grown on transition metal treated 6H-SiC(0001) surfaces, with an onset of graphitization starting around $450-500^\circ\text{C}$. From the chemical reaction between SiC and thin films of Fe or Ru, $\text{sp}^{3}$ carbon is liberated from the SiC crystal and converted to $\text{sp}^{2}$ carbon at the surface. The quality of the graphene is demonstrated using angle-resolved photoemission spectroscopy and low-energy electron diffraction. Furthermore, the orientation and placement of the graphene layers relative to the SiC substrate is verified using angle-resolved absorption spectroscopy and energy-dependent photoelectron spectroscopy, respectively. With subsequent thermal treatments to higher temperatures, a steerable diffusion of the metal layers into the bulk SiC is achieved. The result is graphene supported on magnetic silicide or optionally, directly on semiconductor, at temperatures ideal for further large-scale processing into graphene based device structures. △ Less

Submitted 27 November, 2020; originally announced November 2020.

Comments: 10 pages, 4 figures, 51 references