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A python tool to determine the thickness of the hydrate layer around clinker grains using SEM-BSE images
Authors:
Florian Kleiner,
Franz Becker,
Christiane Rößler,
Horst-Michael Ludwig
Abstract:
To accurately simulate the hydration process of cementitious materials, understanding the growth rate of C-S-H layers around clinker grains is crucial. Nonetheless, the thickness of the hydrate layer shows substantial variation around individual grains, depending on their surrounding. Consequently, it is not feasible to measure hydrate layers manually in a reliable and reproducible manner. To addr…
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To accurately simulate the hydration process of cementitious materials, understanding the growth rate of C-S-H layers around clinker grains is crucial. Nonetheless, the thickness of the hydrate layer shows substantial variation around individual grains, depending on their surrounding. Consequently, it is not feasible to measure hydrate layers manually in a reliable and reproducible manner. To address this challenge, a software has been developed to statistically determine the C-S-H thickness, requiring minimal manual interventions for thresholding and for setting limits like particle size or circularity.
This study presents a tool, which automatically identifies suitable clinker grains and and perform statistical measurements of their hydrate layer up to a specimen age of 28 days. The findings reveal a significant increase in the C-S-H layer, starting from 0.45 micrometer after 1 day and reaching 3.04 micrometer after 28 days. However, for older specimens, the measurement of the C-S-H layer was not feasible due to limited pore space and clinker grains.
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Submitted 4 September, 2023;
originally announced September 2023.
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Argon Broad Ion beam sectioning and high resolution scanning electron microscopy imaging of hydrated alite
Authors:
Florian Kleiner,
Christian Matthes,
Christiane Rößler
Abstract:
Scanning electron microscopy (SEM) imaging is able to visualize micro- to nano-structures of cement and concrete. A prerequisite is that the sample preparation preserves the native structure of the specimen. In this study, argon Broad Ion Beam (BIB) sectioning is compared to state-of-the-art sample preparation (resin embedding, polishing) for hydrated alite. Additionally, it is investigated if dur…
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Scanning electron microscopy (SEM) imaging is able to visualize micro- to nano-structures of cement and concrete. A prerequisite is that the sample preparation preserves the native structure of the specimen. In this study, argon Broad Ion Beam (BIB) sectioning is compared to state-of-the-art sample preparation (resin embedding, polishing) for hydrated alite. Additionally, it is investigated if during BIB, sample cooling is beneficial to avoid deterioration of cement hydrates. The aim is to quantitatively measure phase and pore size distributions in hardened alite pastes. Therefore, not only optimized sample preparation but also optimized imaging conditions are investigated. Finally, it is demonstrated that by image analysis pores down to a diameter of 5 nm in hydrated alite pastes can be quantitatively analysed.
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Submitted 18 August, 2021;
originally announced August 2021.
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Magneto-transport controlled by Landau polariton states
Authors:
Gian L. Paravicini-Bagliani,
Felice Appugliese,
Eli Richter,
Federico Valmorra,
Janine Keller,
Mattias Beck,
Nicola Bartolo,
Clemens Rössler,
Thomas Ihn,
Klaus Ensslin,
Cristiano Ciuti,
Giacomo Scalari,
Jerome Faist
Abstract:
Hybrid excitations, called polaritons, emerge in systems with strong light-matter coupling. Usually, they dominate the linear and nonlinear optical properties with applications in quantum optics. Here, we show the crucial role of the electronic component of polaritons in the magneto-transport of a cavity-embedded 2D electron gas in the ultrastrong coupling regime. We show that the linear dc resist…
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Hybrid excitations, called polaritons, emerge in systems with strong light-matter coupling. Usually, they dominate the linear and nonlinear optical properties with applications in quantum optics. Here, we show the crucial role of the electronic component of polaritons in the magneto-transport of a cavity-embedded 2D electron gas in the ultrastrong coupling regime. We show that the linear dc resistivity is significantly modified by the coupling to the cavity even without external irradiation. Our observations confirm recent predictions of vacuum-induced modification of the resistivity. Furthermore, photo-assisted transport in presence of a weak irradiation field at sub-THz frequencies highlights the different roles of localized and delocalized states.
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Submitted 17 October, 2018; v1 submitted 2 May, 2018;
originally announced May 2018.
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Cavity-mediated coherent coupling between distant quantum dots
Authors:
Giorgio Nicolí,
Michael Sven Ferguson,
Clemens Rössler,
Alexander Wolfertz,
Gianni Blatter,
Thomas Ihn,
Klaus Ensslin,
Christian Reichl,
Werner Wegscheider,
Oded Zilberberg
Abstract:
Scalable architectures for quantum information technologies require to selectively couple long-distance qubits while suppressing environmental noise and cross-talk. In semiconductor materials, the coherent coupling of a single spin on a quantum dot to a cavity hosting fermionic modes offers a new solution to this technological challenge. Here, we demonstrate coherent coupling between two spatially…
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Scalable architectures for quantum information technologies require to selectively couple long-distance qubits while suppressing environmental noise and cross-talk. In semiconductor materials, the coherent coupling of a single spin on a quantum dot to a cavity hosting fermionic modes offers a new solution to this technological challenge. Here, we demonstrate coherent coupling between two spatially separated quantum dots using an electronic cavity design that takes advantage of whispering-gallery modes in a two-dimensional electron gas. The cavity-mediated long-distance coupling effectively minimizes undesirable direct cross-talk between the dots and defines a scalable architecture for all-electronic semiconductor-based quantum information processing.
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Submitted 22 December, 2017;
originally announced December 2017.
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Long-range spin-coherence in a strongly-coupled all electronic dot-cavity system
Authors:
Michael Sven Ferguson,
David Oehri,
Clemens Rössler,
Thomas Ihn,
Klaus Ensslin,
Gianni Blatter,
Oded Zilberberg
Abstract:
We present a theoretical analysis of spin-coherent electronic transport across a mesoscopic dot-cavity system. Such spin-coherent transport has been recently demonstrated in an experiment with a dot-cavity hybrid implemented in a high-mobility two-dimensional electron gas [C. Rössler et al., Phys. Rev. Lett. 115, 166603 (2015)] and its spectroscopic signatures have been interpreted in terms of a c…
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We present a theoretical analysis of spin-coherent electronic transport across a mesoscopic dot-cavity system. Such spin-coherent transport has been recently demonstrated in an experiment with a dot-cavity hybrid implemented in a high-mobility two-dimensional electron gas [C. Rössler et al., Phys. Rev. Lett. 115, 166603 (2015)] and its spectroscopic signatures have been interpreted in terms of a competition between Kondo-type dot-lead and molecular-type dot-cavity singlet-formation. Our analysis brings forward all the transport features observed in the experiments and supports the claim that a spin-coherent molecular singlet forms across the full extent of the dot-cavity device. Our model analysis includes: (i) a single-particle numerical investigation of the two-dimensional geometry, its quantum-coral-type eigenstates and associated spectroscopic transport features, (ii) the derivation of an effective interacting model based on the observations of the numerical and experimental studies, and (iii) the prediction of transport characteristics through the device using a combination of a master-equation approach on top of exact eigenstates of the dot-cavity system, and an equation-of-motion analysis that includes Kondo physics. The latter provides additional temperature scaling predictions for the many-body phase transition between molecular- and Kondo-singlet formation and its associated transport signatures.
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Submitted 19 January, 2018; v1 submitted 31 May, 2017;
originally announced May 2017.
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Finite shot noise and electron heating at quantized conductance in high-mobility quantum point contacts
Authors:
Tatsuya Muro,
Yoshitaka Nishihara,
Shota Norimoto,
Meydi Ferrier,
Tomonori Arakawa,
Kensuke Kobayashi,
Thomas Ihn,
Clemens Rossler,
Klaus Ensslin,
Christian Reichl,
Werner Wegscheider
Abstract:
We report a precise experimental study on the shot noise of a quantum point contact (QPC) fabricated in a GaAs/AlGaAs based high-mobility two-dimensional electron gas (2DEG). The combination of unprecedented cleanliness and very high measurement accuracy has enabled us to discuss the Fano factor to characterize the shot noise with a precision of 1 %. We observed that the shot noise at zero magneti…
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We report a precise experimental study on the shot noise of a quantum point contact (QPC) fabricated in a GaAs/AlGaAs based high-mobility two-dimensional electron gas (2DEG). The combination of unprecedented cleanliness and very high measurement accuracy has enabled us to discuss the Fano factor to characterize the shot noise with a precision of 1 %. We observed that the shot noise at zero magnetic field exhibits a slight enhancement exceeding the single particle theoretical prediction, and that it gradually decreases as a perpendicular magnetic field is applied. We also confirmed that this additional noise completely vanishes in the quantum Hall regime. These phenomena can be explained by the electron heating effect near the QPC, which is suppressed with increasing magnetic field.
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Submitted 15 May, 2017;
originally announced May 2017.
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Transport spectroscopy of singlet-triplet quantum dot states coupled to electronic cavities
Authors:
Michael Sven Ferguson,
Clemens Rössler,
Thomas Ihn,
Klaus Ensslin,
Gianni Blatter,
Oded Zilberberg
Abstract:
A strong coupling between an electronic cavity and a quantum dot has been recently demonstrated [Phys. Rev. Lett. 115, 166603 (2015)] and described in a comprehensive theoretical framework [Phys. Rev. B 96, 235431 (2017)]. Here, we focus on the signatures that demonstrate the cavity's impact on inelastic singlet-triplet transport through the dot. We find the same transport signatures in the experi…
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A strong coupling between an electronic cavity and a quantum dot has been recently demonstrated [Phys. Rev. Lett. 115, 166603 (2015)] and described in a comprehensive theoretical framework [Phys. Rev. B 96, 235431 (2017)]. Here, we focus on the signatures that demonstrate the cavity's impact on inelastic singlet-triplet transport through the dot. We find the same transport signatures in the experiment as predicted by the model that describes the coupled dot--cavity system. Interestingly, a lowest-order treatement of the coupling to the electronic leads on top of an exact diagonalisation of the dot-cavity system is sufficient to highlight the interplay between the cavity and the higher-order inelastic singlet-triplet cotunneling.
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Submitted 19 January, 2018; v1 submitted 12 December, 2016;
originally announced December 2016.
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Measuring the degeneracy of discrete energy levels using a GaAs/AlGaAs quantum dot
Authors:
Andrea Hofmann,
Ville F. Maisi,
Carolin Gold,
Tobias Krähenmann,
Clemens Rössler,
Julien Basset,
Peter Märki,
Christian Reichl,
Werner Wegscheider,
Klaus Ensslin,
Thomas Ihn
Abstract:
We demonstrate an experimental method for measuring quantum state degeneracies in bound state energy spectra. The technique is based on the general principle of detailed balance, and the ability to perform precise and efficient measurements of energy-dependent tunnelling-in and -out rates from a reservoir. The method is realized using a GaAs/AlGaAs quantum dot allowing for the detection of time-re…
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We demonstrate an experimental method for measuring quantum state degeneracies in bound state energy spectra. The technique is based on the general principle of detailed balance, and the ability to perform precise and efficient measurements of energy-dependent tunnelling-in and -out rates from a reservoir. The method is realized using a GaAs/AlGaAs quantum dot allowing for the detection of time-resolved single-electron tunnelling with a precision enhanced by a feedback-control. It is thoroughly tested by tuning orbital and spin-degeneracies with electric and magnetic fields. The technique also lends itself for studying the connection between the ground state degeneracy and the lifetime of the excited states.
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Submitted 4 October, 2016;
originally announced October 2016.
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Measurement back-action in stacked graphene quantum dots
Authors:
Dominik Bischoff,
Marius Eich,
Oded Zilberberg,
Clemens Rössler,
Thomas Ihn,
Klaus Ensslin
Abstract:
We present an electronic transport experiment in graphene where both classical and quantum mechanical charge detector back-action on a quantum dot are investigated. The device consists of two stacked graphene quantum dots separated by a thin layer of boron nitride. This device is fabricated by van der Waals stacking and is equipped with separate source and drain contacts to both dots. By applying…
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We present an electronic transport experiment in graphene where both classical and quantum mechanical charge detector back-action on a quantum dot are investigated. The device consists of two stacked graphene quantum dots separated by a thin layer of boron nitride. This device is fabricated by van der Waals stacking and is equipped with separate source and drain contacts to both dots. By applying a finite bias to one quantum dot, a current is induced in the other unbiased dot. We present an explanation of the observed measurement-induced current based on strong capacitive coupling and energy dependent tunneling barriers, breaking the spatial symmetry in the unbiased system. This is a special feature of graphene-based quantum devices. The experimental observation of transport in classically forbidden regimes is understood by considering higher order quantum mechanical back-action mechanisms.
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Submitted 27 February, 2016;
originally announced February 2016.
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Scanning gate imaging in confined geometries
Authors:
R. Steinacher,
A. A. Kozikov,
C. Rössler,
C. Reichl,
W. Wegscheider,
K. Ensslin,
T. Ihn
Abstract:
This article reports on tunable electron backscattering investigated with the biased tip of a scanning force microscope. Using a channel defined by a pair of Schottky gates, the branched electron flow of ballistic electrons injected from a quantum point contact is guided by potentials of a tunable height well below the Fermi energy. The transition from injection into an open two-dimensional electr…
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This article reports on tunable electron backscattering investigated with the biased tip of a scanning force microscope. Using a channel defined by a pair of Schottky gates, the branched electron flow of ballistic electrons injected from a quantum point contact is guided by potentials of a tunable height well below the Fermi energy. The transition from injection into an open two-dimensional electron gas to a strongly confined channel exhibits three experimentally distinct regimes: one in which branches spread unrestrictedly, one in which branches are confined but the background conductance is affected very little, and one where the branches have disappeared and the conductance is strongly modified. Classical trajectory-based simulations explain these regimes at the microscopic level. These experiments allow us to understand under which conditions branches observed in scanning gate experiments do or do not reflect the flow of electrons.
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Submitted 10 February, 2016;
originally announced February 2016.
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Non-local polarization feedback in a fractional quantum Hall ferromagnet
Authors:
Szymon Hennel,
Beat A. Braem,
Stephan Baer,
Lars Tiemann,
Pirouz Sohi,
Dominik Wehrli,
Andrea Hofmann,
Christian Reichl,
Werner Wegscheider,
Clemens Rössler,
Thomas Ihn,
Klaus Ensslin,
Mark S. Rudner,
Bernd Rosenow
Abstract:
In a quantum Hall ferromagnet, the spin polarization of the two-dimensional electron system can be dynamically transferred to nuclear spins in its vicinity through the hyperfine interaction. The resulting nuclear field typically acts back locally, modifying the local electronic Zeeman energy. Here we report a non-local effect arising from the interplay between nuclear polarization and the spatial…
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In a quantum Hall ferromagnet, the spin polarization of the two-dimensional electron system can be dynamically transferred to nuclear spins in its vicinity through the hyperfine interaction. The resulting nuclear field typically acts back locally, modifying the local electronic Zeeman energy. Here we report a non-local effect arising from the interplay between nuclear polarization and the spatial structure of electronic domains in a $ν=2/3$ fractional quantum Hall state. In our experiments, we use a quantum point contact to locally control and probe the domain structure of different spin configurations emerging at the spin phase transition. Feedback between nuclear and electronic degrees of freedom gives rise to memristive behavior, where electronic transport through the quantum point contact depends on the history of current flow. We propose a model for this effect which suggests a novel route to studying edge states in fractional quantum Hall systems and may account for so-far unexplained oscillatory electronic-transport features observed in previous studies.
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Submitted 28 April, 2016; v1 submitted 11 November, 2015;
originally announced November 2015.
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Equilibrium free energy measurement of a confined electron driven out of equilibrium
Authors:
Andrea Hofmann,
Ville F. Maisi,
Clemens Rössler,
Julien Basset,
Tobias Krähenmann,
Peter Märki,
Thomas Ihn,
Klaus Ensslin,
Christian Reichl,
Werner Wegscheider
Abstract:
We study out-of equilibrium properties of a quantum dot in a GaAs/AlGaAs two-dimensional electron gas. By means of single electron counting experiments, we measure the distribution of work and dissipated heat of the driven quantum dot and relate these quantities to the equilibrium free energy change, as it has been proposed by C. Jarzynski [Phys. Rev. Lett. {\bf78}, 2690 (1997)]. We discuss the in…
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We study out-of equilibrium properties of a quantum dot in a GaAs/AlGaAs two-dimensional electron gas. By means of single electron counting experiments, we measure the distribution of work and dissipated heat of the driven quantum dot and relate these quantities to the equilibrium free energy change, as it has been proposed by C. Jarzynski [Phys. Rev. Lett. {\bf78}, 2690 (1997)]. We discuss the influence of the degeneracy of the quantized energy state on the free energy change as well as its relation to the tunnel rates between the dot and the reservoir.
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Submitted 20 April, 2015;
originally announced April 2015.
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Capacitive coupling in hybrid Graphene-GaAs nanostructures
Authors:
Pauline Simonet,
Clemens Rössler,
Tobias Krähenmann,
Anastasia Varlet,
Thomas Ihn,
Klaus Ensslin,
Christian Reichl,
Werner Wegscheider
Abstract:
Coupled hybrid nanostructures are demonstrated using the combination of lithographically patterned graphene on top of a two-dimensional electron gas (2DEG) buried in a GaAs/AlGaAs heterostructure. The graphene forms Schottky barriers at the surface of the heterostructure and therefore allows tuning the electronic density of the 2DEG. Conversely, the 2DEG potential can tune the graphene Fermi energ…
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Coupled hybrid nanostructures are demonstrated using the combination of lithographically patterned graphene on top of a two-dimensional electron gas (2DEG) buried in a GaAs/AlGaAs heterostructure. The graphene forms Schottky barriers at the surface of the heterostructure and therefore allows tuning the electronic density of the 2DEG. Conversely, the 2DEG potential can tune the graphene Fermi energy. Graphene-defined quantum point contacts in the 2DEG show half-plateaus of quantized conductance in finite bias spectroscopy and display the 0.7 anomaly for a large range of densities in the constriction, testifying to their good electronic properties. Finally, we demonstrate that the GaAs nanostructure can detect charges in the vicinity of the heterostructure's surface. This confirms the strong coupling of the hybrid device: localized states in the graphene ribbon could in principle be probed by the underlying confined channel. The present hybrid graphene/GaAs nanostructures are promising for the investigation of strong interactions and coherent coupling between the two fundamentally different materials.
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Submitted 21 July, 2015; v1 submitted 24 March, 2015;
originally announced March 2015.
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Wave Physics of the Graphene Lattice Emulated in a Ripple Tank
Authors:
J. Rössler,
C. Rössler,
P. Märki,
K. Ensslin,
T. Ihn
Abstract:
Using the example of graphene, we have extended the classic ripple tank experiment to illustrate the behavior of waves in periodic lattices. A loudspeaker driving air through a periodically perforated plate onto the tank's water surface creates wave patterns that are in agreement with numerical simulations and are explained in terms of solid state theory. From an educational point of view, the exp…
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Using the example of graphene, we have extended the classic ripple tank experiment to illustrate the behavior of waves in periodic lattices. A loudspeaker driving air through a periodically perforated plate onto the tank's water surface creates wave patterns that are in agreement with numerical simulations and are explained in terms of solid state theory. From an educational point of view, the experiment provides an illustrative example of the concepts of reciprocal space and symmetry.
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Submitted 2 September, 2015; v1 submitted 23 March, 2015;
originally announced March 2015.
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Transport Spectroscopy of a Spin-Coherent Dot-Cavity System
Authors:
Clemens Rössler,
David Oehri,
Oded Zilberberg,
Gianni Blatter,
Matija Karalic,
Jana Pijnenburg,
Andrea Hofmann,
Thomas Ihn,
Klaus Ensslin,
Christian Reichl,
Werner Wegscheider
Abstract:
Quantum engineering requires controllable artificial systems with quantum coherence exceeding the device size and operation time. This can be achieved with geometrically confined low-dimensional electronic structures embedded within ultraclean materials, with prominent examples being artificial atoms (quantum dots) and quantum corrals (electronic cavities). Combining the two structures, we impleme…
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Quantum engineering requires controllable artificial systems with quantum coherence exceeding the device size and operation time. This can be achieved with geometrically confined low-dimensional electronic structures embedded within ultraclean materials, with prominent examples being artificial atoms (quantum dots) and quantum corrals (electronic cavities). Combining the two structures, we implement a mesoscopic coupled dot-cavity system in a high-mobility two-dimensional electron gas, and obtain an extended spin-singlet state in the regime of strong dot-cavity coupling. Engineering such extended quantum states presents a viable route for nonlocal spin coupling that is applicable for quantum information processing.
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Submitted 1 September, 2015; v1 submitted 10 March, 2015;
originally announced March 2015.
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Nonequilibrium transport in density-modulated phases of the second Landau level
Authors:
S. Baer,
C. Rössler,
S. Hennel,
H. C. Overweg,
T. Ihn,
K. Ensslin,
C. Reichl,
W. Wegscheider
Abstract:
We investigate non-equilibrium transport in the reentrant integer quantum Hall phases of the second Landau level. At high currents, we observe a transition from the reentrant integer quantum Hall phases to classical Hall-conduction. Surprisingly, this transition is markedly different for the hole- and electron sides of each spin-branch. While the hole bubble phases exhibit a sharp transition to an…
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We investigate non-equilibrium transport in the reentrant integer quantum Hall phases of the second Landau level. At high currents, we observe a transition from the reentrant integer quantum Hall phases to classical Hall-conduction. Surprisingly, this transition is markedly different for the hole- and electron sides of each spin-branch. While the hole bubble phases exhibit a sharp transition to an isotropic compressible phase, the transition for the electron side occurs via an intermediate phase. This might indicate a more complex structure of the bubble phases than currently anticipated, or a breaking of the particle-hole symmetry. Such a symmetry breaking in the second Landau level might also have consequences for the physics at filling factor $ν$=5/2.
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Submitted 27 June, 2015; v1 submitted 15 December, 2014;
originally announced December 2014.
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Scanning-gate-induced effects and spatial mapping of a cavity
Authors:
R. Steinacher,
A. A. Kozikov,
C. Rössler,
C. Reichl,
W. Wegscheider,
T. Ihn,
K. Ensslin
Abstract:
Tailored electrostatic potentials are the foundation of scanning gate microscopy. We present several aspects of the tip-induced potential on the two-dimensional electron gas. First, we give methods on how to estimate the size of the tip-induced potential. Then, a ballistic cavity is formed and studied as a function of the bias-voltage of the metallic top gates and probed with the tip-induced poten…
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Tailored electrostatic potentials are the foundation of scanning gate microscopy. We present several aspects of the tip-induced potential on the two-dimensional electron gas. First, we give methods on how to estimate the size of the tip-induced potential. Then, a ballistic cavity is formed and studied as a function of the bias-voltage of the metallic top gates and probed with the tip-induced potential. It is shown how the potential of the cavity changes by tuning the system to a regime where conductance quantization in the constrictions formed by the tip and the top gates occurs. This conductance quantization leads to a unprecedented rich fringe pattern over the entire structure. Finally, the effect of electrostatic screening of the metallic top gates is discussed.
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Submitted 10 February, 2016; v1 submitted 26 June, 2014;
originally announced June 2014.
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Experimental probe of topological orders and edge excitations in the second Landau level
Authors:
Stephan Baer,
Clemens Rössler,
Thomas Ihn,
Klaus Ensslin,
Christian Reichl,
Werner Wegscheider
Abstract:
We measure weak quasiparticle tunneling across a constriction in the second Landau level. At $ν$ = 7/3, 8/3 and 5/2, comparison of temperature and DC bias dependence to weak tunneling theory allows extracting parameters that describe the edges' quasiparticle excitations. At $ν$ = 8/3, our results are well described by a particle-hole conjugate Laughlin state, but not compatible with proposed non-A…
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We measure weak quasiparticle tunneling across a constriction in the second Landau level. At $ν$ = 7/3, 8/3 and 5/2, comparison of temperature and DC bias dependence to weak tunneling theory allows extracting parameters that describe the edges' quasiparticle excitations. At $ν$ = 8/3, our results are well described by a particle-hole conjugate Laughlin state, but not compatible with proposed non-Abelian quasiparticle excitations. For $ν$ = 5/2, our measurements are in good agreement with previous experiments and favor the Abelian (3,3,1) or (1,1,3)-states. At these filling factors, we further investigate the influence of the backscattering strength on the extracted scaling parameters. For $ν$ = 7/3, the backscattering strength strongly affects the scaling parameters, whereas quasiparticle tunneling at $ν$ = 8/3 and 5/2 appears more robust. Our results provide important additional insight about the physics in the second Landau level and contribute to the understanding of the physics underlying the fractional quantum Hall states at $ν$ = 7/3, 8/3 and 5/2.
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Submitted 3 September, 2014; v1 submitted 2 May, 2014;
originally announced May 2014.
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Increasing the ν = 5 / 2 gap energy: an analysis of MBE growth parameters
Authors:
Christian Reichl,
Jun Chen,
Stephan Baer,
Clemens Rössler,
Thomas Ihn,
Klaus Ensslin,
Werner Dietsche,
Werner Wegscheider
Abstract:
The fractional quantized Hall state (FQHS) at the filling factor ν = 5/2 is of special interest due to its possible application for quantum computing. Here we report on the optimization of growth parameters that allowed us to produce two-dimensional electron gases (2DEGs) with a 5/2 gap energy up to 135 mK. We concentrated on optimizing the MBE growth to provide high 5/2 gap energies in "as-grown"…
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The fractional quantized Hall state (FQHS) at the filling factor ν = 5/2 is of special interest due to its possible application for quantum computing. Here we report on the optimization of growth parameters that allowed us to produce two-dimensional electron gases (2DEGs) with a 5/2 gap energy up to 135 mK. We concentrated on optimizing the MBE growth to provide high 5/2 gap energies in "as-grown" samples, without the need to enhance the 2DEGs properties by illumination or gating techniques. Our findings allow us to analyse the impact of doping in narrow quantum wells with respect to conventional DX-doping in AlxGa1-xAs. The impact of the setback distance between doping layer and 2DEG was investigated as well. Additionally, we found a considerable increase in gap energy by reducing the amount of background impurities. To this end growth techniques like temperature reductions for substrate and effusion cells and the reduction of the Al mole fraction in the 2DEG region were applied.
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Submitted 19 March, 2014;
originally announced March 2014.
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Spectroscopy of Equilibrium and Non-Equilibrium Charge Transfer in Semiconductor Quantum Structures
Authors:
Clemens Rössler,
Simon Burkhard,
Tobias Krähenmann,
Marc Röösli,
Peter Märki,
Julien Basset,
Thomas Ihn,
Klaus Ensslin,
Christian Reichl,
Werner Wegscheider
Abstract:
We investigate equilibrium and non-equilibrium charge-transfer processes by performing high-resolution transport spectroscopy. Using electrostatically defined quantum dots for energy-selective emission and detection, we achieved unprecedented spectral resolution and a high degree of tunability of relevant experimental parameters. Most importantly, we observe that the spectral width of elastically…
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We investigate equilibrium and non-equilibrium charge-transfer processes by performing high-resolution transport spectroscopy. Using electrostatically defined quantum dots for energy-selective emission and detection, we achieved unprecedented spectral resolution and a high degree of tunability of relevant experimental parameters. Most importantly, we observe that the spectral width of elastically transferred electrons can be substantially smaller than the linewidth of a thermally broadened Coulomb peak. This finding indicates that the charge-transfer process is fast compared to the electron--phonon interaction time. By drawing an analogy to double quantum dots, we argue that the spectral width of the elastic resonance is determined by the lifetime broadening $h\itΓ$ of the emitter and detector states. Good agreement with the model is found also in an experiment in which the charge transfer is in the regime $h\itΓ\gg k_{\rm{B}}T$. By performing spectroscopy below the Fermi energy, we furthermore observe elastic and inelastic transfer of holes.
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Submitted 22 August, 2014; v1 submitted 17 March, 2014;
originally announced March 2014.
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Resonant electron tunneling in a tip-controlled potential landscape
Authors:
N. Pascher,
F. Timpu,
C. Rossler,
T. Ihn,
K. Ensslin,
C. Reichel,
W. Wegscheider
Abstract:
By placing the biased tip of an atomic force microscope at a specific position above a semiconductor surface we can locally shape the potential landscape. Inducing a local repulsive potential in a two dimensional electron gas near a quantum point contact one obtains a potential minimum which exhibits a remarkable behavior in transport experiments at high magnetic fields and low temperatures. In su…
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By placing the biased tip of an atomic force microscope at a specific position above a semiconductor surface we can locally shape the potential landscape. Inducing a local repulsive potential in a two dimensional electron gas near a quantum point contact one obtains a potential minimum which exhibits a remarkable behavior in transport experiments at high magnetic fields and low temperatures. In such an experiment we observe distinct and reproducible oscillations in the measured conductance as a function of magnetic field, voltages and tip position. They follow a systematic behavior consistent with a resonant tunneling mechanism. From the periodicity in magnetic field we can find the characteristic width of this minimum to be of the order of 100 nm. Surprisingly, this value remains almost the same for different values of the bulk filling factors, although the tip position has to be adjusted by distances of the order of one micron.
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Submitted 1 July, 2014; v1 submitted 31 January, 2014;
originally announced January 2014.
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Locally induced quantum interference in scanning gate experiments
Authors:
A. A. Kozikov,
R. Steinacher,
C. Rössler,
T. Ihn,
K. Ensslin,
C. Reichl,
W. Wegscheider
Abstract:
We present conductance measurements of a ballistic circular stadium influenced by a scanning gate. When the tip depletes the electron gas below, we observe very pronounced and regular fringes covering the entire stadium. The fringes correspond to transmitted modes in constrictions formed between the tip-induced potential and the boundaries of the stadium. Moving the tip and counting the fringes gi…
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We present conductance measurements of a ballistic circular stadium influenced by a scanning gate. When the tip depletes the electron gas below, we observe very pronounced and regular fringes covering the entire stadium. The fringes correspond to transmitted modes in constrictions formed between the tip-induced potential and the boundaries of the stadium. Moving the tip and counting the fringes gives us exquisite control over the transmission of these constrictions. We use this control to form a quantum ring with a specific number of modes in each arm showing the Aharonov-Bohm effect in low-field magnetoconductance measurements.
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Submitted 10 January, 2014;
originally announced January 2014.
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Interplay of fractional quantum Hall states and localization in quantum point contacts
Authors:
S. Baer,
C. Rössler,
E. C. de Wiljes,
P. -L. Ardelt,
T. Ihn,
K. Ensslin,
C. Reichl,
W. Wegscheider
Abstract:
We investigate integer and fractional quantum Hall states in quantum point contacts (QPCs) of different geometries, defined in AlGaAs/GaAs heterostructures employing different doping and screening techniques. We find that, even in the highest mobility samples, interference and localization strongly influence the transport properties. We propose microscopic models for these effects, based on single…
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We investigate integer and fractional quantum Hall states in quantum point contacts (QPCs) of different geometries, defined in AlGaAs/GaAs heterostructures employing different doping and screening techniques. We find that, even in the highest mobility samples, interference and localization strongly influence the transport properties. We propose microscopic models for these effects, based on single- and many-electron physics. For integer quantum Hall states, transport is modulated due to the self-consistent formation of compressible regions of enhanced or reduced density in the incompressible region of the constriction. In the fractional quantum Hall regime, we observe the localization of fractionally charged quasi-particles in the constriction and an interplay of single- and many-electron physics. At low electron densities and in comparatively weak magnetic fields, single-electron interference dominates transport. Utilizing optimized growth and gating techniques, the $ν$=5/2 state can be observed in a QPC, conserving the bulk properties in an unprecedented quality. Our results might improve the understanding of the influence of localization on the transmission properties of QPCs, which is necessary for the interpretation of interference experiments employing QPCs, especially at $ν$=5/2.
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Submitted 10 March, 2014; v1 submitted 11 November, 2013;
originally announced November 2013.
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Imaging the Conductance of Integer and Fractional Quantum Hall Edge States
Authors:
Nikola Pascher,
Clemens Rössler,
Thomas Ihn,
Klaus Ensslin,
Christian Reichl,
Werner Wegscheider
Abstract:
We measure the conductance of a quantum point contact (QPC) while the biased tip of a scanning probe microscope induces a depleted region in the electron gas underneath. At finite magnetic field we find plateaus in the real-space maps of the conductance as a function of tip position at integer (ν=1,2,3,4,6,8) and fractional (ν=1/3,2/3,5/3,4/5) values of transmission. They resemble theoretically pr…
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We measure the conductance of a quantum point contact (QPC) while the biased tip of a scanning probe microscope induces a depleted region in the electron gas underneath. At finite magnetic field we find plateaus in the real-space maps of the conductance as a function of tip position at integer (ν=1,2,3,4,6,8) and fractional (ν=1/3,2/3,5/3,4/5) values of transmission. They resemble theoretically predicted compressible and incompressible stripes of quantum Hall edge states. The scanning tip allows us to shift the constriction limiting the conductance in real space over distances of many microns. The resulting stripes of integer and fractional filling factors are rugged on the micron scale, i.e. on a scale much smaller than the zero-field elastic mean free path of the electrons. Our experiments demonstrate that microscopic inhomogeneities are relevant even in high-quality samples and lead to locally strongly fluctuating widths of incompressible regions even down to their complete suppression for certain tip positions. The macroscopic quantization of the Hall resistance measured experimentally in a non-local contact configuration survives in the presence of these inhomogeneities, and the relevant local energy scale for the ν=2 state turns out to be independent of tip position.
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Submitted 19 September, 2013;
originally announced September 2013.
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Imaging magnetoelectric subbands in ballistic constrictions
Authors:
A. A. Kozikov,
D. Weinmann,
C. Roessler,
T. Ihn,
K. Ensslin,
C. Reichl,
W. Wegscheider
Abstract:
We perform scanning gate experiments on ballistic constrictions in the presence of small perpendicular magnetic fields. The constrictions form the entrance and exit of a circular gate-defined ballistic stadium. Close to constrictions we observe sets of regular fringes creating a checker board pattern. Inside the stadium conductance fluctuations governed by chaotic dynamics of electrons are visible…
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We perform scanning gate experiments on ballistic constrictions in the presence of small perpendicular magnetic fields. The constrictions form the entrance and exit of a circular gate-defined ballistic stadium. Close to constrictions we observe sets of regular fringes creating a checker board pattern. Inside the stadium conductance fluctuations governed by chaotic dynamics of electrons are visible. The checker board pattern allows us to determine the number of transmitted modes in the constrictions forming between the tip-induced potential and gate-defined geometry. Spatial investigation of the fringe pattern in a perpendicular magnetic field shows a transition from electrostatic to magnetic depopulation of magnetoelectric subbands. Classical and quantum simulations agree well with different aspects of our observations.
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Submitted 2 May, 2013;
originally announced May 2013.
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Cyclic Depopulation of Edge States in a large Quantum Dot
Authors:
Stephan Baer,
Clemens Rössler,
Thomas Ihn,
Klaus Ensslin,
Christian Reichl,
Werner Wegscheider
Abstract:
We investigate magneto-transport through a 1.6 μm wide quantum dot (QD) with adjacent charge detector, for different integer filling factors in the QD and constrictions. When this system is operated as a Fabry-Pérot interferometer, transport is governed by a Coulomb blockade mechanism. In the tunneling regime, we can directly measure the charge stability diagram of two capacitively and tunnel coup…
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We investigate magneto-transport through a 1.6 μm wide quantum dot (QD) with adjacent charge detector, for different integer filling factors in the QD and constrictions. When this system is operated as a Fabry-Pérot interferometer, transport is governed by a Coulomb blockade mechanism. In the tunneling regime, we can directly measure the charge stability diagram of two capacitively and tunnel coupled Landau levels. This situation has been investigated in direct transport, as well as in single electron counting. The edge states within the dot are non-cyclically depopulated, which can be explained by a simple capacitive model and allows to draw conclusions about the edge state geometry within the quantum dot.
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Submitted 11 August, 2013; v1 submitted 6 November, 2012;
originally announced November 2012.
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Tunable Charge Detectors for Semiconductor Quantum Circuits
Authors:
Clemens Rössler,
Tobias Krähenmann,
Stephan Baer,
Thomas Ihn,
Klaus Ensslin,
Christian Reichl,
Werner Wegscheider
Abstract:
Nanostructures defined in high-mobility two-dimensional electron systems offer a unique way of controlling the microscopic details of the investigated device. Quantum point contacts play a key role in these investigations, since they are not only a research topic themselves, but turn out to serve as convenient and powerful detectors for their electrostatic environment. We investigate how the sensi…
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Nanostructures defined in high-mobility two-dimensional electron systems offer a unique way of controlling the microscopic details of the investigated device. Quantum point contacts play a key role in these investigations, since they are not only a research topic themselves, but turn out to serve as convenient and powerful detectors for their electrostatic environment. We investigate how the sensitivity of charge detectors can be further improved by reducing screening, increasing the capacitive coupling between charge and detector and by tuning the quantum point contacts' confinement potential into the shape of a localized state. We demonstrate the benefits of utilizing a localized state by performing fast and well-resolved charge detection of a large quantum dot in the quantum Hall regime.
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Submitted 14 February, 2013; v1 submitted 20 September, 2012;
originally announced September 2012.
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Interference of electrons in backscattering through a quantum point contact
Authors:
A. A. Kozikov,
C. Rössler,
T. Ihn,
K. Ensslin,
C. Reichl,
W. Wegscheider
Abstract:
Scanning gate microscopy is used to locally investigate electron transport in a high-mobility two-dimensional electron gas formed in a GaAs/AlGaAs heterostructure. Using quantum point contacts (QPC) we observe branches caused by electron backscattering decorated with interference fringes similar to previous observations by Topinka et al. We investigate the branches at different points of a conduct…
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Scanning gate microscopy is used to locally investigate electron transport in a high-mobility two-dimensional electron gas formed in a GaAs/AlGaAs heterostructure. Using quantum point contacts (QPC) we observe branches caused by electron backscattering decorated with interference fringes similar to previous observations by Topinka et al. We investigate the branches at different points of a conductance plateau as well as between plateaus, and demonstrate that the most dramatic changes in branch pattern occur at the low-energy side of the conductance plateaus. The branches disappear at magnetic fields as low as 50 mT demonstrating the importance of backscattering for the observation of the branching effect. The spacing between the interference fringes varies by more than 50% for different branches across scales of microns. Several scenarios are discussed to explain this observation.
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Submitted 2 April, 2013; v1 submitted 6 June, 2012;
originally announced June 2012.
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Quantum dot occupation and electron dwell time in the cotunneling regime
Authors:
B. Küng,
C. Rössler,
M. Beck,
J. Faist,
T. Ihn,
K. Ensslin
Abstract:
We present comparative measurements of the charge occupation and conductance of a GaAs/AlGaAs quantum dot. The dot charge is measured with a capacitively coupled quantum point contact sensor. In the single-level Coulomb blockade regime near equilibrium, charge and conductance signals are found to be proportional to each other. We conclude that in this regime, the two signals give equivalent inform…
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We present comparative measurements of the charge occupation and conductance of a GaAs/AlGaAs quantum dot. The dot charge is measured with a capacitively coupled quantum point contact sensor. In the single-level Coulomb blockade regime near equilibrium, charge and conductance signals are found to be proportional to each other. We conclude that in this regime, the two signals give equivalent information about the quantum dot system. Out of equilibrium, we study the inelastic-cotunneling regime. We compare the measured differential dot charge with an estimate assuming a dwell time of transmitted carriers on the dot given by h/E, where E is the blockade energy of first-order tunneling. The measured signal is of a similar magnitude as the estimate, compatible with a picture of cotunneling as transmission through a virtual intermediate state with a short lifetime.
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Submitted 28 August, 2012; v1 submitted 20 April, 2012;
originally announced April 2012.
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Imaging the lateral shift of a quantum-point contact using scanning-gate microscopy
Authors:
S. Schnez,
C. Rössler,
T. Ihn,
K. Ensslin,
C. Reichl,
W. Wegscheider
Abstract:
We perform scanning-gate microscopy on a quantum-point contact. It is defined in a high-mobility two-dimensional electron gas of an AlGaAs/GaAs heterostructure, giving rise to a weak disorder potential. The lever arm of the scanning tip is significantly smaller than that of the split gates defining the conducting channel of the quantum-point contact. We are able to observe that the conducting chan…
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We perform scanning-gate microscopy on a quantum-point contact. It is defined in a high-mobility two-dimensional electron gas of an AlGaAs/GaAs heterostructure, giving rise to a weak disorder potential. The lever arm of the scanning tip is significantly smaller than that of the split gates defining the conducting channel of the quantum-point contact. We are able to observe that the conducting channel is shifted in real space when asymmetric gate voltages are applied. The observed shifts are consistent with transport data and numerical estimations.
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Submitted 7 September, 2011;
originally announced September 2011.
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Irreversibility on the Level of Single-Electron Tunneling
Authors:
B. Küng,
C. Rössler,
M. Beck,
M. Marthaler,
D. S. Golubev,
Y. Utsumi,
T. Ihn,
K. Ensslin
Abstract:
We present a low-temperature experimental test of the fluctuation theorem for electron transport through a double quantum dot. The rare entropy-consuming system trajectories are detected in the form of single charges flowing against the source-drain bias by using time-resolved charge detection with a quantum point contact. We find that these trajectories appear with a frequency that agrees with th…
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We present a low-temperature experimental test of the fluctuation theorem for electron transport through a double quantum dot. The rare entropy-consuming system trajectories are detected in the form of single charges flowing against the source-drain bias by using time-resolved charge detection with a quantum point contact. We find that these trajectories appear with a frequency that agrees with the theoretical predictions even under strong nonequilibrium conditions, when the finite bandwidth of the charge detection is taken into account.
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Submitted 19 January, 2012; v1 submitted 21 July, 2011;
originally announced July 2011.
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Transport Properties of Clean Quantum Point Contacts
Authors:
C. Rössler,
S. Baer,
E. de Wiljes,
P. -L. Ardelt,
T. Ihn,
K. Ensslin,
C. Reichl,
W. Wegscheider
Abstract:
Quantum point contacts are fundamental building blocks for mesoscopic transport experiments and play an important role in recent interference- and fractional quantum Hall experiments. However, it is not clear how electron-electron interactions and the random disorder potential influence the confinement potential and give rise to phenomena like the mysterious 0.7 anomaly. Novel growth techniques of…
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Quantum point contacts are fundamental building blocks for mesoscopic transport experiments and play an important role in recent interference- and fractional quantum Hall experiments. However, it is not clear how electron-electron interactions and the random disorder potential influence the confinement potential and give rise to phenomena like the mysterious 0.7 anomaly. Novel growth techniques of GaAs/AlGaAs heterostructures for high-mobility two-dimensional electron gases enable us to investigate quantum point contacts with a strongly suppressed disorder potential. These clean quantum point contacts indeed show transport features that are obscured by disorder in standard samples. From this transport data, we are able to extract the parameters of the confinement potential which describe its shape in longitudinal and transverse direction. Knowing the shape (and hence the slope) of the confinement potential might be crucial to predict which interaction-induced states can form in quantum point contacts.
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Submitted 21 October, 2011; v1 submitted 15 June, 2011;
originally announced June 2011.
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Highly Tunable Hybrid Quantum Dots with Charge Detection
Authors:
C. Rössler,
B. Küng,
S. Dröscher,
T. Choi,
T. Ihn,
K. Ensslin,
M. Beck
Abstract:
In order to employ solid state quantum dots as qubits, both a high degree of control over the confinement potential as well as sensitive charge detection are essential. We demonstrate that by combining local anodic oxidation with local Schottky-gates, these criteria are nicely fulfilled in the resulting hybrid device. To this end, a quantum dot with adjacent charge detector is defined. After tunin…
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In order to employ solid state quantum dots as qubits, both a high degree of control over the confinement potential as well as sensitive charge detection are essential. We demonstrate that by combining local anodic oxidation with local Schottky-gates, these criteria are nicely fulfilled in the resulting hybrid device. To this end, a quantum dot with adjacent charge detector is defined. After tuning the quantum dot to contain only a single electron, we are able to observe the charge detector signal of the quantum dot state for a wide range of tunnel couplings.
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Submitted 14 September, 2010;
originally announced September 2010.
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Gating of high-mobility two-dimensional electron gases in GaAs/AlGaAs heterostructures
Authors:
C. Rossler,
T. Feil,
P. Mensch,
T. Ihn,
K. Ensslin,
D. Schuh,
W. Wegscheider
Abstract:
We investigate high-mobility two-dimensional electron gases in AlGaAs heterostructures by employing Schottky-gate-dependent measurements of the samples' electron density and mobility. Surprisingly, we find that two different sample configurations can be set in situ with mobilities diering by a factor of more than two in a wide range of densities. This observation is discussed in view of charge r…
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We investigate high-mobility two-dimensional electron gases in AlGaAs heterostructures by employing Schottky-gate-dependent measurements of the samples' electron density and mobility. Surprisingly, we find that two different sample configurations can be set in situ with mobilities diering by a factor of more than two in a wide range of densities. This observation is discussed in view of charge redistributions between the doping layers and is relevant for the design of future gateable high-mobility electron gases.
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Submitted 18 February, 2010;
originally announced February 2010.
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Magneto-electrical subbands of freely suspended quantum point contacts
Authors:
C. Rossler,
M. Herz,
M. Bichler,
S. Ludwig
Abstract:
We present a versatile design of freely suspended quantum point contacts with particular large one-dimensional subband quantization energies of up to 10meV. The nanoscale bridges embedding a two-dimensional electron system are fabricated from AlGaAs/GaAs heterostructures by electron-beam lithography and etching techniques. Narrow constrictions define quantum point contacts that are capacitively…
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We present a versatile design of freely suspended quantum point contacts with particular large one-dimensional subband quantization energies of up to 10meV. The nanoscale bridges embedding a two-dimensional electron system are fabricated from AlGaAs/GaAs heterostructures by electron-beam lithography and etching techniques. Narrow constrictions define quantum point contacts that are capacitively controlled via local in-plane side gates. Employing transport spectroscopy, we investigate the transition from electrostatic subbands to Landau-quantization in a perpendicular magnetic field. The large subband quantization energies allow us to utilize a wide magnetic field range and thereby observe a large exchange splitted spin-gap of the two lowest Landau-levels.
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Submitted 25 May, 2009;
originally announced May 2009.
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Photoconductive gain in semiconductor quantum wires
Authors:
K. -D. Hof,
C. Rossler,
S. Manus,
J. P. Kotthaus,
A. W. Holleitner,
D. Schuh,
W. Wegscheider
Abstract:
We report on a photoconductive gain in semiconductor quantum wires which are lithographically defined in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum wires as maxima in the photoresponse across the quantum wires. We interpret the results by optically induced holes in the valence band of the quantum well which sh…
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We report on a photoconductive gain in semiconductor quantum wires which are lithographically defined in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum wires as maxima in the photoresponse across the quantum wires. We interpret the results by optically induced holes in the valence band of the quantum well which shift the one-dimensional subbands of the quantum wire. Here we demonstrate that the effect persists up to a temperature of about 17 Kelvin.
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Submitted 6 October, 2008;
originally announced October 2008.
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Dynamic photoconductive gain effect in shallow-etched AlGaAs/GaAs quantum wires
Authors:
K. -D. Hof,
C. Rossler,
S. Manus,
J. P. Kotthaus,
A. W. Holleitner,
D. Schuh,
W. Wegscheider
Abstract:
We report on a dynamic photoconductive gain effect in quantum wires which are lithographically fabricated in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum wires as maxima in the photoresponse across the quantum wires. We interpret the results by optically induced holes in the valence band of the quantum well whic…
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We report on a dynamic photoconductive gain effect in quantum wires which are lithographically fabricated in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum wires as maxima in the photoresponse across the quantum wires. We interpret the results by optically induced holes in the valence band of the quantum well which shift the chemical potential of the quantum wire. The non-linear current-voltage characteristics of the quantum wires also allow detecting the photoresponse effect of excess charge carriers in the conduction band of the quantum well. The dynamics of the photoconductive gain are limited by the recombination time of both electrons and holes.
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Submitted 6 June, 2008;
originally announced June 2008.
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Optically induced transport properties of freely suspended semiconductor submicron channels
Authors:
C. Rossler,
K. -D. Hof,
S. Manus,
S. Ludwig,
J. P. Kotthaus,
J. Simon,
A. W. Holleitner,
D. Schuh,
W. Wegscheider
Abstract:
We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas (2DEG). The submicron devices are fabricated in AlGaAs/GaAs heterostructures by etching techniques. The photoresponse of the devices can be understood in terms of the combination of photogating and a photodoping effect. The hereby enhanced electronic conductance exhibits a ti…
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We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas (2DEG). The submicron devices are fabricated in AlGaAs/GaAs heterostructures by etching techniques. The photoresponse of the devices can be understood in terms of the combination of photogating and a photodoping effect. The hereby enhanced electronic conductance exhibits a time constant in the range of one to ten milliseconds.
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Submitted 15 May, 2008;
originally announced May 2008.
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Laterally defined freely suspended quantum dots in GaAs/AlGaAs heterostructures
Authors:
C Rossler,
M Bichler,
D Schuh,
W Wegscheider,
S Ludwig
Abstract:
Free standing beams containing a two-dimensional electron system are shaped from a GaAs/AlGaAs heterostructure. Quantum point contacts and (double) quantum dots are laterally defined using metal top gates. We investigate the electronic properties of these nanostructures by transport spectroscopy. Tunable localized electron states in freely suspended nanostructures are a promising tool to investi…
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Free standing beams containing a two-dimensional electron system are shaped from a GaAs/AlGaAs heterostructure. Quantum point contacts and (double) quantum dots are laterally defined using metal top gates. We investigate the electronic properties of these nanostructures by transport spectroscopy. Tunable localized electron states in freely suspended nanostructures are a promising tool to investigate the electron-phonon-interaction.
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Submitted 29 February, 2008;
originally announced February 2008.