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Unconventional resistive switching in dense Ag-based nanowire networks with brain-inspired perspectives
Authors:
Juan I. Diaz Schneider,
Cynthia P. Quinteros,
Eduardo D. Martínez,
Pablo E. Levy
Abstract:
We report an unconventional resistive switching effect on high-density self-assembled Ag-nanowire networks tailored by a fuse-like operation. We propose a mechanism to rationalize the observed phenomenology by analyzing the electrical signatures before and after such a fusing. The explanation allows reconciling the results obtained in similar systems early adopted as transparent electrodes and the…
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We report an unconventional resistive switching effect on high-density self-assembled Ag-nanowire networks tailored by a fuse-like operation. We propose a mechanism to rationalize the observed phenomenology by analyzing the electrical signatures before and after such a fusing. The explanation allows reconciling the results obtained in similar systems early adopted as transparent electrodes and the more recent attempts to use this type of substrate for in-materia computational operations. In addition to the usual analog nature of the available resistance states and the ability to tune internal weights, we show that these networks' sparsity and non-linear behavior are also attributes. Thus, the formerly exhibited nanowires' abilities to code synaptic behavior are complemented by neuronal features upon properly tuning the network density and the applied electrical protocol.
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Submitted 28 January, 2025;
originally announced January 2025.
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Two-junction model in different percolation regimes of silver nanowires networks
Authors:
J. I. Diaz Schneider,
C. P. Quinteros,
P. E. Levy,
E. D. Martínez
Abstract:
Random networks offer fertile ground for achieving complexity and criticality, both crucial for an unconventional computing paradigm inspired by biological brains' features. In this work, we focus on characterizing and modeling different electrical transport regimes of self-assemblies of silver nanowires (AgNWs). As percolation plays an essential role in such a scenario, we explore a broad range o…
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Random networks offer fertile ground for achieving complexity and criticality, both crucial for an unconventional computing paradigm inspired by biological brains' features. In this work, we focus on characterizing and modeling different electrical transport regimes of self-assemblies of silver nanowires (AgNWs). As percolation plays an essential role in such a scenario, we explore a broad range of areal density coverage. Close-to-percolation realizations (usually used to demonstrate neuromorphic computing capabilities) have large pristine resistance and require an electrical activation. Up to now, highly conductive over-percolated systems (commonly used in electrode fabrication technology) have not been thoroughly considered for hardware-based neuromorphic applications, though biological systems exhibit such an extremely high degree of interconnections. Here, we show that high current densities in over-percolated low-resistance AgNW networks induce a fuse-type process, allowing a switching operation. Such electro-fusing discriminates between weak and robust NW-to-NW links and enhances the role of filamentary junctions. Their reversible resistive switching enable different conductive paths exhibiting linear I-V features. We experimentally study both percolation regimes and propose a model comprising two types of junctions that can describe, through numerical simulations, the overall behavior and observed phenomenology. These findings unveil a potential interplay of functionalities of neuromorphic systems and transparent electrodes.
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Submitted 2 September, 2024;
originally announced September 2024.
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Evolution of ferromagnetic stripes in FePt films at low temperature
Authors:
Cynthia P. Quinteros,
Dafne Goijman,
Silvia Damerio,
Julián Milano
Abstract:
Patterns of ferroic domains and domain walls are being intensively studied to implement new logic schemes. Any technological application of such objects depends on a detailed understanding of them. This study analyzes patterns of ferromagnetic stripes on equiatomic FePt thin films at low temperatures. Since FePt is known to develop a transition from in-plane homogeneous magnetization to stripes up…
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Patterns of ferroic domains and domain walls are being intensively studied to implement new logic schemes. Any technological application of such objects depends on a detailed understanding of them. This study analyzes patterns of ferromagnetic stripes on equiatomic FePt thin films at low temperatures. Since FePt is known to develop a transition from in-plane homogeneous magnetization to stripes upon varying its thickness, multiple samples are studied to consider the critical value within the analyzed range. Stripes' width demonstrates the well-known Murayama's law while a non-trivial dependence on temperature is also reported. Moreover, the room-temperature uniform distribution of the pattern evolves into a distorted one upon temperature cycling. Finally, dissimilar striped patterns are obtained upon reducing and increasing temperature indicating the states are dependent on the history of applied stimuli rather than the parametric conditions.
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Submitted 6 March, 2023; v1 submitted 17 February, 2023;
originally announced February 2023.
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Ferroelastic domain walls in BiFeO$_3$ as memristive networks
Authors:
Jan Rieck,
Davide Cipollini,
Mart Salverda,
Cynthia P. Quinteros,
Lambert R. B. Schomaker,
Beatriz Noheda
Abstract:
Electronic conduction along individual domain walls (DWs) has been reported in BiFeO$_3$ (BFO) and other nominally insulating ferroelectrics. DWs in these materials separate regions of differently oriented electrical polarization (domains) and are just a few atoms wide, providing self-assembled nanometric conduction paths. In this work, it is shown that electronic transport is possible also from w…
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Electronic conduction along individual domain walls (DWs) has been reported in BiFeO$_3$ (BFO) and other nominally insulating ferroelectrics. DWs in these materials separate regions of differently oriented electrical polarization (domains) and are just a few atoms wide, providing self-assembled nanometric conduction paths. In this work, it is shown that electronic transport is possible also from wall to wall through the dense network of as-grown DWs in BFO thin films. Electric field cycling at different points of the network, performed locally by conducting atomic force microscope (cAFM), induces resistive switching selectively at the DWs, both for vertical (single wall) and lateral (wall-to-wall) conduction. These findings are the first step towards investigating DWs as memristive networks for information processing and in-materio computing.
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Submitted 6 July, 2022;
originally announced July 2022.
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Spatio-temporal evolution of resistance state in simulated memristive networks
Authors:
Fabrizio Di Francesco,
Gabriel A. Sanca,
Cynthia P. Quinteros
Abstract:
Originally studied for their suitability to store information compactly, memristive networks are now being analysed as implementations of neuromorphic circuits. An extremely high number of elements is thus mandatory. To surpass the limited achievable connectivity - due to the featuring size - exploiting self-assemblies has been proposed as an alternative, in turn posing more challenges. In an atte…
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Originally studied for their suitability to store information compactly, memristive networks are now being analysed as implementations of neuromorphic circuits. An extremely high number of elements is thus mandatory. To surpass the limited achievable connectivity - due to the featuring size - exploiting self-assemblies has been proposed as an alternative, in turn posing more challenges. In an attempt for offering insight on what to expect when characterizing the collective electrical response of switching assemblies, in this work, networks of memristive elements are simulated. Collective electrical behaviour and maps of resistance states are characterized upon different electrical stimuli. By comparing the response of homogeneous and heterogeneous networks, we delineate differences that might be experimentally observed when the number of memristive units is scaled up and disorder arises as an inevitable feature.
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Submitted 29 November, 2021; v1 submitted 12 August, 2021;
originally announced August 2021.
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Field-dependent roughness of moving domain walls in a Pt/Co/Pt magnetic thin film
Authors:
María José Cortés Burgos,
Pamela C. Guruciaga,
Daniel Jordán,
Cynthia P. Quinteros,
Elisabeth Agoritsas,
Javier Curiale,
Mara Granada,
Sebastian Bustingorry
Abstract:
The creep motion of domain walls driven by external fields in magnetic thin films is described by universal features related to the underlying depinning transition. One key parameter in this description is the roughness exponent characterizing the growth of fluctuations of the domain wall position with its longitudinal length scale. The roughness amplitude, which gives information about the scale…
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The creep motion of domain walls driven by external fields in magnetic thin films is described by universal features related to the underlying depinning transition. One key parameter in this description is the roughness exponent characterizing the growth of fluctuations of the domain wall position with its longitudinal length scale. The roughness amplitude, which gives information about the scale of fluctuations, however, has received less attention. Albeit their relevance, experimental reports of the roughness parameters, both exponent and amplitude, are scarce. We report here experimental values of the roughness parameters for different magnetic field intensities in the creep regime at room temperature for a Pt/Co/Pt thin film. The mean value of the roughness exponent is $ζ= 0.74$, and we show that it can be rationalized as an effective value in terms of the known universal values corresponding to the depinning and thermal cases. In addition, it is shown that the roughness amplitude presents a significant increase with decreasing field. These results contribute to the description of domain wall motion in disordered thin magnetic systems.
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Submitted 30 June, 2021;
originally announced June 2021.
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Plausible physical mechanisms for unusual volatile/non-volatile resistive switching in HfO2-based stacks
Authors:
Cynthia P. Quinteros,
Jordi Antoja-Lleonart,
Beatriz Noheda
Abstract:
Memristive devices made of silicon compatible simple oxides are of great interest for storage and logic devices in future adaptable electronics and non-digital computing applications. A series of highly desirable properties observed in an atomic-layer-deposited hafnia-based stack, triggered our interest to investigate their suitability for technological implementations. In this paper, we report ou…
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Memristive devices made of silicon compatible simple oxides are of great interest for storage and logic devices in future adaptable electronics and non-digital computing applications. A series of highly desirable properties observed in an atomic-layer-deposited hafnia-based stack, triggered our interest to investigate their suitability for technological implementations. In this paper, we report our attempts to reproduce the observed behaviour within the framework of a proposed underlying mechanism. The inability of achieving the electrical response of the original batch indicates that a key aspect in those devices has remained undetected. By comparing newly made devices with the original ones, we gather some clues on the plausible alternative mechanisms that could give rise to comparable electrical behaviours.
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Submitted 3 February, 2021; v1 submitted 24 August, 2020;
originally announced August 2020.
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Impact of growth conditions on the domain nucleation and domain wall propagation in Pt/Co/Pt stacks
Authors:
C. P. Quinteros,
M. J. Cortes Burgos,
L. J. Albornoz,
J. Gomez,
P. Granell,
F. Golmar,
M. L. Ibarra,
S. Bustingorry,
J. Curiale,
M. Granada
Abstract:
Understanding the effect of fabrication conditions on domain wall motion in thin films with perpendicular magnetization is a mandatory issue in order to tune their properties aiming to design spintronics devices based on such phenomenon. In this context, the present work intends to show how different growth conditions may affect domain wall motion in the prototypical system Pt/Co/Pt. The trilayers…
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Understanding the effect of fabrication conditions on domain wall motion in thin films with perpendicular magnetization is a mandatory issue in order to tune their properties aiming to design spintronics devices based on such phenomenon. In this context, the present work intends to show how different growth conditions may affect domain wall motion in the prototypical system Pt/Co/Pt. The trilayers were deposited by dc sputtering, and the parameters varied in this study were the Co thickness, the substrate roughness, and the base pressure in the deposition chamber. Magneto-optical Kerr effect-based magnetometry and microscopy combined with X-ray reflectometry, atomic force microscopy, and transmission electron microscopy were adopted as experimental techniques. This permitted us to elucidate the impact on the hysteresis loops and on the domain wall dynamics, produced by different growth conditions. As other authors, we found that Co thickness is strongly determinant for both the coercive field and the domain wall velocity. On the contrary, the topographic roughness of the substrate and the base pressure of the deposition chamber evidence a selective impact on the nucleation of magnetic domains and on domain wall propagation, respectively, providing a tool to tune these properties.
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Submitted 29 July, 2020; v1 submitted 7 January, 2020;
originally announced January 2020.
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Magneto-ionic control of spin polarization in magnetic tunnel junctions
Authors:
Yingfen Wei,
Sylvia Matzen,
Cynthia P. Quinteros,
Thomas Maroutian,
Guillaume Agnus,
Philippe Lecoeur,
Beatriz Noheda
Abstract:
Magnetic tunnel junctions (MTJs) with Hf0.5Zr0.5O2 barriers are reported to show both tunneling magnetoresistance effect (TMR) and tunneling electroresistance effect (TER), displaying four resistance states by magnetic and electric field switching. Here we show that, under electric field cycling of large enough magnitude, the TER can reach values as large as 10^6%. Moreover, concomitant with this…
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Magnetic tunnel junctions (MTJs) with Hf0.5Zr0.5O2 barriers are reported to show both tunneling magnetoresistance effect (TMR) and tunneling electroresistance effect (TER), displaying four resistance states by magnetic and electric field switching. Here we show that, under electric field cycling of large enough magnitude, the TER can reach values as large as 10^6%. Moreover, concomitant with this TER enhancement, the devices develop electrical control of spin polarization, with sign reversal of the TMR effect. Currently, this intermediate state exists for a limited number of cycles and understanding the origin of these phenomena is key to improve its stability. The experiments presented here point to the magneto-ionic effect as the origin of the large TER and strong magneto-electric coupling, showing that ferroelectric polarization switching of the tunnel barrier is not the main contribution.
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Submitted 28 July, 2019;
originally announced July 2019.
