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Incipient Formation of the Reentrant Insulating Phase in a Dilute 2D Hole System with Strong Interactions
Authors:
Richard L. J. Qiu,
Chieh-Wen Liu,
Andrew J. Woods,
Alessandro Serafin,
Jian-Sheng Xia,
Loren N. Pfeiffer,
Ken W. West,
Xuan P. A. Gao
Abstract:
A new reentrant insulating phase (RIP) in low magnetic fields has been reported in the literature in strongly interacting 2D carrier systems and was suggested to be related to the formation of a Wigner crystal [e.g. Qiu et al, PRL 108, 106404 (2012)]. We have studied the transformation between the metallic liquid phase and the low field RIP in a dilute 2D hole system with large interaction paramet…
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A new reentrant insulating phase (RIP) in low magnetic fields has been reported in the literature in strongly interacting 2D carrier systems and was suggested to be related to the formation of a Wigner crystal [e.g. Qiu et al, PRL 108, 106404 (2012)]. We have studied the transformation between the metallic liquid phase and the low field RIP in a dilute 2D hole system with large interaction parameter $r_s$ (~20-30) in GaAs quantum wells. Instead of a sharp transition, increasing density (or lowering $r_s$) drives the RIP into a state where an incipient RIP coexists with the metallic 2D hole liquid. The non-trivial temperature dependent resistivity and the in-plane magnetic field induced enhancement of the RIP highlight the competition between two phases and the essential role of spin in this mixture phase, and are consistent with the Pomeranchuk effect in a mixture of Wigner crystal and Fermi liquid.
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Submitted 24 December, 2020;
originally announced December 2020.
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Evidence for a New Intermediate Phase in a Strongly Correlated 2D System near Wigner Crystallization
Authors:
R. L. J. Qiu,
N. J. Goble,
A. Serafin,
L. Yin,
J. S. Xia,
N. S. Sullivan,
L. N. Pfeiffer,
K. W. West,
Xuan P. A. Gao
Abstract:
How the two dimensional (2D) quantum Wigner crystal (WC) transforms into the metallic liquid phase remains to be an outstanding problem in physics. In theories considering the 2D WC to liquid transition in the clean limit, it was suggested that a number of intermediate phases might exist. We have studied the transformation between the metallic fluid phase and the low magnetic field reentrant insul…
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How the two dimensional (2D) quantum Wigner crystal (WC) transforms into the metallic liquid phase remains to be an outstanding problem in physics. In theories considering the 2D WC to liquid transition in the clean limit, it was suggested that a number of intermediate phases might exist. We have studied the transformation between the metallic fluid phase and the low magnetic field reentrant insulating phase (RIP) which was interpreted as due to WC formation [Qiu et al, PRL 108, 106404 (2012)], in a strongly correlated 2D hole system with large interaction parameter $r_s$ ($\sim~$20-30) and high mobility. Instead of a sharp transition, we found that increasing density (or lowering $r_s$) drives the RIP into a state where the incipient RIP coexists with Fermi liquid. This apparent mixture phase intermediate between Fermi liquid and WC also exhibits a non-trivial temperature dependent resistivity behavior which may be qualitatively understood by the reversed melting of WC in the mixture, in analogy to the Pomeranchuk effect in the solid-liquid mixture of Helium-3.
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Submitted 24 September, 2015;
originally announced September 2015.
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Metal-Insulator Transition in Variably Doped (Bi1-xSbx)2Se3 Nanosheets
Authors:
Chee Huei Lee,
Rui He,
ZhenHua Wang,
Richard L. J. Qiu,
Ajay Kumar,
Conor Delaney,
Ben Beck,
T. E. Kidd,
C. C. Chancey,
R. Mohan Sankaran,
Xuan P. A. Gao
Abstract:
Topological insulators are novel quantum materials with metallic surface transport, but insulating bulk behavior. Often, topological insulators are dominated by bulk contributions due to defect induced bulk carriers, making it difficult to isolate the more interesting surface transport characteristics. Here, we report the synthesis and characterization of nanosheets of topological insulator Bi2Se3…
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Topological insulators are novel quantum materials with metallic surface transport, but insulating bulk behavior. Often, topological insulators are dominated by bulk contributions due to defect induced bulk carriers, making it difficult to isolate the more interesting surface transport characteristics. Here, we report the synthesis and characterization of nanosheets of topological insulator Bi2Se3 with variable Sb-doping level to control the electron carrier density and surface transport behavior. (Bi1-xSbx)2Se3 thin films of thickness less than 10 nm are prepared by epitaxial growth on mica substrates in a vapor transport setup. The introduction of Sb in Bi2Se3 effectively suppresses the room temperature electron density from ~4 \times 10^13/cm^2 in pure Bi2Se3 (x = 0) to ~2 \times 10^12/cm^2 in (Bi1-xSbx)2Se3 at x ~0.15, while maintaining the metallic transport behavior. At x > ~0.20, a metal-insulator transition (MIT) is observed indicating that the system has transformed into an insulator in which the metallic surface conduction is blocked. In agreement with the observed MIT, Raman spectroscopy reveals the emergence of vibrational modes arising from Sb-Sb and Sb-Se bonds at high Sb concentrations, confirming the appearance of Sb2Se3 crystal structure in the sample. These results suggest that nanostructured chalcogenide films with controlled doping can be a tunable platform for fundamental studies and electronic applications of topological insulator systems.
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Submitted 15 March, 2013;
originally announced March 2013.
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Ambipolar Surface Conduction in Ternary Topological Insulator Bi_2(Te_{1-x}Se_x)_3 Nanoribbons
Authors:
ZhenHua Wang,
Richard L. J. Qiu,
Chee Huei Lee,
ZhiDong Zhang,
Xuan P. A. Gao
Abstract:
We report the composition and gate voltage induced tuning of transport properties in chemically synthesized Bi2(Te1-xSex)3 nanoribbons. It is found that increasing Se concentration effectively suppresses the bulk carrier transport and induces semiconducting behavior in the temperature dependent resistance of Bi2(Te1-xSex)3 nanoribbons when x is greater than ~10%. In Bi2(Te1-xSex)3 nanoribbons with…
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We report the composition and gate voltage induced tuning of transport properties in chemically synthesized Bi2(Te1-xSex)3 nanoribbons. It is found that increasing Se concentration effectively suppresses the bulk carrier transport and induces semiconducting behavior in the temperature dependent resistance of Bi2(Te1-xSex)3 nanoribbons when x is greater than ~10%. In Bi2(Te1-xSex)3 nanoribbons with x ~20%, gate voltage enables ambipolar modulation of resistance (or conductance) in samples with thickness around or larger than 100nm, indicating significantly enhanced contribution in transport from the gapless surface states.
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Submitted 15 March, 2013;
originally announced March 2013.
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One-Dimensional Quantum Confinement Effect Modulated Thermoelectric Properties in InAs Nanowires
Authors:
Yuan Tian,
Mohammed R. Sakr,
Jesse M. Kinder,
Dong Liang,
Michael J. MacDonald,
Richard L. J. Qiu,
Hong-Jun Gao,
Xuan P. A. Gao
Abstract:
We report electrical conductance and thermopower measurements on InAs nanowires synthesized by chemical vapor deposition. Gate modulation of the thermopower of individual InAs nanowires with diameter around 20nm is obtained over T=40 to 300K. At low temperatures (T< ~100K), oscillations in the thermopower and power factor concomitant with the stepwise conductance increases are observed as the gate…
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We report electrical conductance and thermopower measurements on InAs nanowires synthesized by chemical vapor deposition. Gate modulation of the thermopower of individual InAs nanowires with diameter around 20nm is obtained over T=40 to 300K. At low temperatures (T< ~100K), oscillations in the thermopower and power factor concomitant with the stepwise conductance increases are observed as the gate voltage shifts the chemical potential of electrons in InAs nanowire through quasi-one-dimensional (1D) sub-bands. This work experimentally shows the possibility to modulate semiconductor nanowire's thermoelectric properties through the peaked 1D electronic density of states in the diffusive transport regime, a long-sought goal in nanostructured thermoelectrics research. Moreover, we point out the importance of scattering (or disorder) induced energy level broadening in smearing out the 1D confinement enhanced thermoelectric power factor at practical temperatures (e.g. 300K).
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Submitted 15 March, 2013;
originally announced March 2013.
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Connecting the Reentrant Insulating Phase and the Zero Field Metal-Insulator Transition in a 2D Hole System
Authors:
Richard L. J. Qiu,
Xuan P. A. Gao,
L. N. Pfeiffer,
K. W. West
Abstract:
We present the transport and capacitance measurements of 10nm wide GaAs quantum wells with hole densities around the critical point of the 2D metal-insulator transition (critical density $p_c$ down to 0.8$\times10^{10}$/cm$^2$, $r_s\sim$36). For metallic hole density $p_c < p <p_c +0.15\times10^{10}$/cm$^2$, a reentrant insulating phase (RIP) is observed between the $ν$=1 quantum Hall state and th…
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We present the transport and capacitance measurements of 10nm wide GaAs quantum wells with hole densities around the critical point of the 2D metal-insulator transition (critical density $p_c$ down to 0.8$\times10^{10}$/cm$^2$, $r_s\sim$36). For metallic hole density $p_c < p <p_c +0.15\times10^{10}$/cm$^2$, a reentrant insulating phase (RIP) is observed between the $ν$=1 quantum Hall state and the zero field metallic state and is attributed to the formation of pinned Wigner crystal. Through studying the evolution of the RIP versus 2D hole density by transport and capacitance experiments, we show that the RIP is incompressible and continuously connected to the zero field insulator, suggesting a similar origin for these two phases.
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Submitted 24 September, 2011;
originally announced September 2011.
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Degenerate versus semi-degenerate transport in a correlated 2D hole system
Authors:
Richard L. J. Qiu,
Xuan P. A. Gao,
Loren N. Pfeiffer,
Ken W. West
Abstract:
It has been puzzling that the resistivity of high mobility two-dimensional(2D) carrier systems in semiconductors with low carrier density often exhibits a large increase followed by a decrease when the temperature ($T$) is raised above a characteristic temperature comparable with the Fermi temperature ($T_F$). We find that the metallic 2D hole system (2DHS) in GaAs quantum well (QW) has a linear d…
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It has been puzzling that the resistivity of high mobility two-dimensional(2D) carrier systems in semiconductors with low carrier density often exhibits a large increase followed by a decrease when the temperature ($T$) is raised above a characteristic temperature comparable with the Fermi temperature ($T_F$). We find that the metallic 2D hole system (2DHS) in GaAs quantum well (QW) has a linear density ($p$) dependent conductivity, $σ\approx eμ^*(p-p_0)$, in both the degenerate (T<<T_F) and semi-degenerate (T T_F) regimes. The $T$-dependence of $σ(p)$ suggests that the metallic conduction (d$σ$/d$T<$0) at low $T$ is associated with the increase in $μ^*$, the effective mobility of itinerant carriers. However, the resistivity decrease in the semi-degenerate regime ($T>T_F$) is originated from the reduced $p_0$, the density of immobile carriers in a two-phase picture.
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Submitted 25 April, 2011;
originally announced April 2011.
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Two-dimensional Transport Induced Linear Magneto-Resistance in Topological Insulator Bi$_2$Se$_3$ Nanoribbons
Authors:
Hao Tang,
Dong Liang,
Richard L. J. Qiu,
Xuan P. A. Gao
Abstract:
We report the study of a novel linear magneto-resistance (MR) under perpendicular magnetic fields in Bi2Se3 nanoribbons. Through angular dependence magneto-transport experiments, we show that this linear MR is purely due to two-dimensional (2D) transport, in agreement with the recently discovered linear MR from 2D topological surface state in bulk Bi2Te3, and the linear MR of other gapless semicon…
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We report the study of a novel linear magneto-resistance (MR) under perpendicular magnetic fields in Bi2Se3 nanoribbons. Through angular dependence magneto-transport experiments, we show that this linear MR is purely due to two-dimensional (2D) transport, in agreement with the recently discovered linear MR from 2D topological surface state in bulk Bi2Te3, and the linear MR of other gapless semiconductors and graphene. We further show that the linear MR of Bi2Se3 nanoribbons persists to room temperature, underscoring the potential of exploiting topological insulator nanomaterials for room temperature magneto-electronic applications.
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Submitted 1 August, 2011; v1 submitted 11 January, 2011;
originally announced January 2011.
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Magneto-transport Effects in Topological Insulator Bi$_2$Se$_3$ Nanoribbons
Authors:
Hao Tang,
Dong Liang,
Richard L. J. Qiu,
Xuan P. A. Gao
Abstract:
Magneto-resistance (MR) of Bi$_2$Se$_3$ nanoribbons is studied over a broad range of temperature ($T$=300K-2K) and under various magnetic field ($B$) orientations. The MR is strongly anisotropic with the perpendicular MR much larger than the longitudinal and transverse MRs. The perpendicular MR exhibits quadratic $B$-dependence in low fields and becomes linear at high $B$. However, when $T$ increa…
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Magneto-resistance (MR) of Bi$_2$Se$_3$ nanoribbons is studied over a broad range of temperature ($T$=300K-2K) and under various magnetic field ($B$) orientations. The MR is strongly anisotropic with the perpendicular MR much larger than the longitudinal and transverse MRs. The perpendicular MR exhibits quadratic $B$-dependence in low fields and becomes linear at high $B$. However, when $T$ increases, the perpendicular MR becomes linear over the whole magnetic field range (0-9T) up to room temperature. This unusual linear MR is discussed in the context of the linear quantum MR of the topological surface-states. We also observe the boundary-scattering effect in MR at low temperatures, which indicates that the out-of-plane Fermi momentum is much smaller the in-plane Fermi momentum, excluding the simple three-dimensional Fermi surface picture.
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Submitted 29 April, 2010; v1 submitted 31 March, 2010;
originally announced March 2010.
