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Ferroelectric Chirality-Driven Direction-Tunable and Spin-Invertible Corner States in 2D MOF-Based Magnetic Second-Order Topological Insulators
Authors:
Jialin Gong,
Wei Sun,
Yang Wu,
Zhenzhou Guo,
Shifeng Qian,
Xiaotian Wang,
Gang Zhang
Abstract:
Despite the rapid progress in predicting 2D magnetic second-order topological insulators (SOTIs), effective strategies for manipulating their spin-polarized corner states remain largely unexplored. The interplay between ferroelectricity, chirality, magnetism, and topology presents an untapped opportunity for controlling these corner states. Here, we propose a novel approach for tuning spin-polariz…
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Despite the rapid progress in predicting 2D magnetic second-order topological insulators (SOTIs), effective strategies for manipulating their spin-polarized corner states remain largely unexplored. The interplay between ferroelectricity, chirality, magnetism, and topology presents an untapped opportunity for controlling these corner states. Here, we propose a novel approach for tuning spin-polarized corner states in 2D magnetic SOTIs by inducing ferroelectric chirality in 2D metal-organic frameworks (MOFs) with intrinsic structural flexibility. Through symmetry analysis, we strategically replace pyrazine (pyz) ligands with 2-pyrazinolate (2-pyzol) ligands in the 2D MOF Cr(pyz)2, leading to the emergence of a new 2D magnetic SOTI, Cr(2-pyzol)2, which facilitates ferroelectric chirality controlled spin-polarized corner states in both spin channels. Through first-principle calculations, we demonstrate that Cr(2-pyzol)2 belongs to ferroelectric chiral systems, and its corner states can be directionally tuned in real space and spin-inverted in spin space upon ferroelectric chirality switching. Our work represents the first attempt to simultaneously manipulate corner states in both real space and spin space, offering a new strategy for integrating ferroelectric chirality into 2D MOF-based magnetic SOTIs.
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Submitted 26 February, 2025;
originally announced February 2025.
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Unconventional topological Weyl-dipole phonon
Authors:
Jianhua Wang,
Yang Wang,
Feng Zhou,
Wenhong Wang,
Zhenxiang Cheng,
Shifeng Qian,
Xiaotian Wang,
Zhi-Ming Yu
Abstract:
A pair of Weyl points (WPs) with opposite Chern numbers ${\cal{C}}$ can exhibit an additional higher-order $Z_2$ topological charge, giving rise to the formation of a $Z_2$ Weyl dipole. Owing to the nontrivial topological charge, $Z_2$ Weyl dipoles should also appear in pairs, and the WPs within each $Z_2$ Weyl dipole can not be annihilated when meeting together. As a novel topological state, the…
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A pair of Weyl points (WPs) with opposite Chern numbers ${\cal{C}}$ can exhibit an additional higher-order $Z_2$ topological charge, giving rise to the formation of a $Z_2$ Weyl dipole. Owing to the nontrivial topological charge, $Z_2$ Weyl dipoles should also appear in pairs, and the WPs within each $Z_2$ Weyl dipole can not be annihilated when meeting together. As a novel topological state, the topological Weyl-dipole phase (TWDP) has garnered significant attention, yet its realization in crystalline materials remains a challenge. Here, through first-principles calculations and theoretical analysis, we demonstrate the existence of the Weyl-dipole phase in the phonon spectra of the $P6_3$ type Y(OH)$_3$. Particularly, the Weyl dipole in this system is protected by a quantized quadrupole moment, and it distinguished from conventional Weyl dipole, as it comprises an unconventional charge-3 WP with ${\cal{C}}=-3$ and three conventional charge-1 WPs with ${\cal{C}}=1$. Consequently, the Weyl-dipole phase in Y(OH)$_3$ features unique two-dimensional (2D) sextuple-helicoid Fermi-arc states on the top and bottom surfaces, protected by the Chern number, as well as one-dimensional (1D) hinge states that connect the two Weyl dipoles along the side hinges, guaranteed by the quantized quadrupole moment. Our findings not only introduce a novel higher-order topological phase, but also promote Y(OH)$_3$ as a promising platform for exploring multi-dimensional boundaries and the interaction between first-order and second-order topologies.
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Submitted 24 February, 2025;
originally announced February 2025.
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Field-Modulated Crystal Transport in Altermagnetic Topological materials
Authors:
Xiuxian Yang,
Jingming Shi,
Shifeng Qian,
Xiaodong Zhou,
Yinwei Li
Abstract:
Altermagnetism (AM), a recently proposed third type of collinear magnetic phase, has garnered significant attention due to its extraordinary features, including nonrelativistic alternating spin-splitting, spin-degenerate nodal topology, and anisotropic crystal transport. Here, we explore the role of inherent altermagnetic topology in crystal transport phenomena (such as crystal Hall, Nernst, and t…
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Altermagnetism (AM), a recently proposed third type of collinear magnetic phase, has garnered significant attention due to its extraordinary features, including nonrelativistic alternating spin-splitting, spin-degenerate nodal topology, and anisotropic crystal transport. Here, we explore the role of inherent altermagnetic topology in crystal transport phenomena (such as crystal Hall, Nernst, and thermal Hall effects) in several room-temperature altermagnets, including tetragonal \textit{X}V$_2$\textit{Y}$_2$O (\textit{X} = K, Rb, Cs; \textit{Y} = S, Se, Te), RuO$_2$, MnF$_2$, as well as hexagonal CrSb and MnTe. Notably, in \textit{X}V$_2$\textit{Y}$_2$O, the first experimentally realized layered altermagnets, crystal transport is governed by altermagnetic pseudonodal surfaces, emphasizing the purely topological contributions to crystal transport. Furthermore, crystal transport exhibits strong anisotropy relative to the N{é}el vector. Interestingly, we demonstrate that spin-canting, a unique method for selectively controlling the altermagnetic topology and crystal transport, can substantially enhance the magnitude of these phenomena while preserving the alternating spin characteristics in both real and momentum space. Our findings provide an effective strategy for manipulating crystal transport in altermagnets, offering valuable insights for their potential applications in spintronics and spin caloritronics.
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Submitted 23 February, 2025;
originally announced February 2025.
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General Electronic Structure Calculation Method for Twisted Systems
Authors:
Junxi Yu,
Shifeng Qian,
Cheng-Cheng Liu
Abstract:
In recent years, two-dimensional twisted systems have gained increasing attention. However, the calculation of electronic structures in twisted material has remained a challenge. To address this, we have developed a general computational methodology that can generate twisted geometries starting from monolayer structure and obtain the precisely relaxed twisted structure through a machine learning-b…
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In recent years, two-dimensional twisted systems have gained increasing attention. However, the calculation of electronic structures in twisted material has remained a challenge. To address this, we have developed a general computational methodology that can generate twisted geometries starting from monolayer structure and obtain the precisely relaxed twisted structure through a machine learning-based method. Then the electronic structure properties of the twisted material are calculated using tight-Binding (TB) and continuum model methods, thus the entire process requires minimal computational resources. In this paper, we first introduce the theoretical methods for generating twisted structures and computing their electronic properties. We then provide calculations and brief analyses of the electronic structure properties for several typical two-dimensional materials with different characteristics. This work serves as a solid foundation for researchers interested in studying twisted systems.
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Submitted 10 July, 2024;
originally announced July 2024.
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Real topological phonons in 3D carbon allotropes
Authors:
Xiaotian Wang,
Jingbo Bai,
Jianhua Wang,
Zhenxiang Cheng,
Shifeng Qian,
Wenhong Wang,
Gang Zhang,
Zhi-Ming Yu,
Yugui Yao
Abstract:
There has been a significant focus on real topological systems that enjoy space-time inversion symmetry (PT ) and lack spin-orbit coupling. While the theoretical classification of the real topology has been established, more progress has yet to be made in the materials realization of such real topological systems in three dimensions (3D). To address this crucial issue, by selecting the carbon-base…
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There has been a significant focus on real topological systems that enjoy space-time inversion symmetry (PT ) and lack spin-orbit coupling. While the theoretical classification of the real topology has been established, more progress has yet to be made in the materials realization of such real topological systems in three dimensions (3D). To address this crucial issue, by selecting the carbon-based material candidates as targets, we perform high-throughput computing to inspect the real topology in the phonon spectrums of the 3D carbon allotropes in the Samara Carbon Allotrope Database (SACADA). Among 1192 kinds of 3D carbon allotropes, we find 65 real topological systems with a phononic real Chern insulating (PRCI) state, 2 real topological systems with a phononic real nodal line (PRNL) state, 10 real topological systems with a phononic real Dirac point (PRDP) state, and 8 real topological systems with a phononic real triple-point pair (PRTPP) state. This extremely expands the material candidates with real topology, especially for the gapless topological phonons. We exhibit the PRCI, PRNL, PRTPP, and PRDP states of 27-SG. 166-pcu-h, 1081-SG. 194- 4 2T13-CA, 52-SG. 141-gis, and 132-SG. 191-3,4T157 as illustrative examples, and explore the second-order boundary mode, i.e., phononic hinge mode. Among the four examples, the materials 1081-SG. 194-42T13-CA and 52-SG. 141-gis are so ideal that the PRNL and PRTPP in them are well separated from other bands, and the phononic hinge mode can be clearly observed. This study aims to broaden the understanding of 3D topological phonons, and emphasizes the potential of 3D carbon allotropes as a valuable framework for exploring the fascinating physics related to phononic hinge modes and phononic real topology.
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Submitted 20 May, 2024;
originally announced May 2024.
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Spintronic devices and applications using noncollinear chiral antiferromagnets
Authors:
Ankit Shukla,
Siyuan Qian,
Shaloo Rakheja
Abstract:
Antiferromagnetic materials have a vanishingly small net magnetization, which generates weak dipolar fields and makes them robust against external magnetic perturbation and rapid magnetization dynamics, as dictated by the geometric mean of their exchange and anisotropy energies. However, experimental and theoretical techniques to detect and manipulate the antiferromagnetic order in a fully electri…
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Antiferromagnetic materials have a vanishingly small net magnetization, which generates weak dipolar fields and makes them robust against external magnetic perturbation and rapid magnetization dynamics, as dictated by the geometric mean of their exchange and anisotropy energies. However, experimental and theoretical techniques to detect and manipulate the antiferromagnetic order in a fully electrical manner must be developed to enable advanced spintronic devices with antiferromagnets (AFMs) as their active spin-dependent elements. Among the various AFMs, conducting AFMs offer high electrical and thermal conductivities and strong electron-spin-phonon interactions. Noncollinear metallic AFMs with negative chirality, including Mn3Sn, Mn3Ge, and Mn3GaN, offer rich physics that arises from their topology. In this review article, we introduce the crystal structure and the physical phenomena observed in negative chirality AFMs. Experimental and theoretical advances related to current-induced dynamics on the spin structure of Mn3Sn are discussed. We then present a potential AFM spintronic device that can serve as a non-volatile memory, high-frequency signal generator, neuron emulator, and even a probabilistic bit, depending on the design parameters and the input stimuli, i.e., amplitude and pulse width of the injected spin current and the external magnetic field. In this device, spin-orbit torques can be used to manipulate the order parameter, while the device state can be read via tunneling magnetoresistance. We also present analytic models that relate the performance characteristics of the device with its design parameters, thus enabling a rapid technology-device assessment. Effects of Joule heating and thermal noise on the device characteristics are briefly discussed. We close the paper by summarizing the status of research and present our outlook in this rapidly evolving research field.
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Submitted 15 November, 2024; v1 submitted 2 February, 2024;
originally announced February 2024.
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Stable Higher-Order Topological Dirac Semimetals with $\mathbb{Z}_2$ Monopole Charge in Alternating-twisted Multilayer Graphenes and beyond
Authors:
Shifeng Qian,
Yongpan Li,
Cheng-Cheng Liu
Abstract:
We demonstrate that a class of stable $\mathbb{Z}_2$ monopole charge Dirac point ($\mathbb{Z}_2$DP) phases can robustly exist in real materials, which surmounts the understanding: that is, a $\mathbb{Z}_2$DP is unstable and generally considered to be only the critical point of a $\mathbb{Z}_2$ nodal line ($\mathbb{Z}_2$NL) characterized by a $\mathbb{Z}_2$ monopole charge (the second Stiefel-Whitn…
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We demonstrate that a class of stable $\mathbb{Z}_2$ monopole charge Dirac point ($\mathbb{Z}_2$DP) phases can robustly exist in real materials, which surmounts the understanding: that is, a $\mathbb{Z}_2$DP is unstable and generally considered to be only the critical point of a $\mathbb{Z}_2$ nodal line ($\mathbb{Z}_2$NL) characterized by a $\mathbb{Z}_2$ monopole charge (the second Stiefel-Whitney number $w_2$) with space-time inversion symmetry but no spin-orbital coupling. For the first time, we explicitly reveal the higher-order bulk-boundary correspondence in the stable $\mathbb{Z}_2$DP phase. We propose the alternating-twisted multilayer graphene, which can be regarded as 3D twisted bilayer graphene (TBG), as the first example to realize such stable $\mathbb{Z}_2$DP phase and show that the Dirac points in the 3D TBG are essential degenerate at high symmetric points protected by crystal symmetries and carry a nontrivial $\mathbb{Z}_2$ monopole charge ($w_2=1$), which results in higher-order hinge states along the entire Brillouin zone of the $k_z$ direction. By breaking some crystal symmetries or tailoring interlayer coupling we are able to access $\mathbb{Z}_2$NL phases or other $\mathbb{Z}_2$DP phases with hinge states of adjustable length. In addition, we present other 3D materials which host $\mathbb{Z}_2$DPs in the electronic band structures and phonon spectra. We construct a minimal eight-band tight-binding lattice model that captures these nontrivial topological characters and furthermore tabulate all possible space groups to allow the existence of the stable $\mathbb{Z}_2$DP phases, which will provide direct and strong guidance for the realization of the $\mathbb{Z}_2$ monopole semimetal phases in electronic materials, metamaterials and electrical circuits, etc.
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Submitted 22 December, 2023;
originally announced December 2023.
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3D carbon allotropes: Topological quantum materials with obstructed atomic insulating phases, multiple bulk-boundary correspondences, and real topology
Authors:
Jianhua Wang,
Ting-Ting Zhang,
Qianwen Zhang,
Xia Cheng,
Wenhong Wang,
Shifeng Qian,
Zhenxiang Cheng,
Gang Zhang,
Xiaotian Wang
Abstract:
The study of topological phases with unconventional bulk-boundary correspondences and nontrivial real Chern number has garnered significant attention in the topological states of matter. Using the first-principle calculations and theoretical analysis, we perform a high-throughput material screening of the 3D obstructed atomic insulators (OAIs) and 3D real Chern insulators (RCIs) based on the Samar…
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The study of topological phases with unconventional bulk-boundary correspondences and nontrivial real Chern number has garnered significant attention in the topological states of matter. Using the first-principle calculations and theoretical analysis, we perform a high-throughput material screening of the 3D obstructed atomic insulators (OAIs) and 3D real Chern insulators (RCIs) based on the Samara Carbon Allotrope Database (SACADA). Results show that 422 out of 703 3D carbon allotropes are 3D OAIs with multiple bulk-boundary correspondences, including 2D obstructed surface states (OSSs) and 1D hinge states, which are in one dimension and two dimensions lower than the 3D bulk, respectively. The 2D OSSs in these OAIs can be modified when subjected to appropriate boundaries, which benefits the investigation of surface engineering and the development of efficient topological catalysts. These 422 OAIs, which have 2D and 1D boundary states, are excellent platforms for multi-dimensional topological boundaries research. Remarkably, 138 of 422 OAIs are also 3D RCIs, which show a nontrivial real topology in the protection of spacetime inversion symmetry. Our work not only provides a comprehensive list of 3D carbon-based OAIs and RCIs, but also guides their application in various aspects based on multiple bulk-boundary correspondences and real topological phases.
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Submitted 30 November, 2023;
originally announced November 2023.
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Impact of strain on the SOT-driven dynamics of thin film Mn$_3$Sn
Authors:
Ankit Shukla,
Siyuan Qian,
Shaloo Rakheja
Abstract:
Mn$_3$Sn, a metallic antiferromagnet with an anti-chiral 120$^\circ$ spin structure, generates intriguing magneto-transport signatures such as a large anomalous Hall effect, spin-polarized current with novel symmetries, anomalous Nernst effect, and magneto-optic Kerr effect. When grown epitaxially as MgO(110)[001]$\parallel$ Mn$_3$Sn($0\bar{1}\bar{1}0$)[0001], Mn$_3$Sn experiences a uniaxial tensi…
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Mn$_3$Sn, a metallic antiferromagnet with an anti-chiral 120$^\circ$ spin structure, generates intriguing magneto-transport signatures such as a large anomalous Hall effect, spin-polarized current with novel symmetries, anomalous Nernst effect, and magneto-optic Kerr effect. When grown epitaxially as MgO(110)[001]$\parallel$ Mn$_3$Sn($0\bar{1}\bar{1}0$)[0001], Mn$_3$Sn experiences a uniaxial tensile strain, which changes the bulk six-fold anisotropy landscape to a perpendicular magnetic anisotropy with two stable states. In this work, we investigate the field-assisted spin orbit-torque (SOT)-driven response of the order parameter in single-domain Mn$_3$Sn with uniaxial tensile strain. We find that for a non-zero external magnetic field, the order parameter can be switched between the two stable states if the magnitude of the input current is between two field-dependent critical currents. Below the lower critical current, the order parameter exhibits a stationary state in the vicinity of the initial stable state. On the other hand, above the higher critical current, the order parameter shows oscillatory dynamics which could be tuned from the 100's of megahertz to the gigahertz range. We obtain approximate expressions of the two critical currents and find them to agree very well with the numerical simulations for experimentally relevant magnetic fields. We also obtain unified functional form of the switching time versus the input current for different magnetic fields. Finally, we show that for lower values of Gilbert damping ($α\leq 2\times 10^{-3}$), the critical currents and the final steady states depend significantly on the damping constant. The numerical and analytic results presented in our work can be used by both theorists and experimentalists to understand the SOT-driven order dynamics in PMA Mn$_3$Sn and design future experiments and devices.
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Submitted 5 March, 2024; v1 submitted 18 September, 2023;
originally announced September 2023.
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Layer Construction of Three-Dimensional Z2 Monopole Charge Nodal Line Semimetals and prediction of the abundant candidate materials
Authors:
Yongpan Li,
Shifeng Qian,
Cheng-Cheng Liu
Abstract:
The interplay between symmetry and topology led to the concept of symmetry-protected topological states, including all non-interacting and weakly interacting topological quantum states. Among them, recently proposed nodal line semimetal states with space-time inversion ($\mathcal{PT}$) symmetry which are classified by the Stiefel-Whitney characteristic class associated with real vector bundles and…
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The interplay between symmetry and topology led to the concept of symmetry-protected topological states, including all non-interacting and weakly interacting topological quantum states. Among them, recently proposed nodal line semimetal states with space-time inversion ($\mathcal{PT}$) symmetry which are classified by the Stiefel-Whitney characteristic class associated with real vector bundles and can carry a nontrivial $\mathbb{Z}_2$ monopole charge have attracted widespread attention. However, we know less about such 3D $\mathbb{Z}_2$ nodal line semimetals and do not know how to construct them. In this work, we first extend the layer construction previously used to construct topological insulating states to topological semimetallic systems. We construct 3D $\mathbb{Z}_2$ nodal line semimetals by stacking of 2D $\mathcal{PT}$-symmetric Dirac semimetals via nonsymmorphic symmetries. Based on our construction scheme, effective model and combined with first-principles calculations, we predict two types of candidate electronic materials for $\mathbb{Z}_2$ nodal line semimetals, namely 14 Si and Ge structures and 108 transition metal dichalcogenides $MX_2$ ($M$=Cr, Mo, W, $X$=S, Se, Te). Our theoretical construction scheme can be directly applied to metamaterials and circuit systems. Our work not only greatly enriches the candidate materials and deepens the understanding of $\mathbb{Z}_2$ nodal line semimetal states but also significantly extends the application scope of layer construction.
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Submitted 4 September, 2023;
originally announced September 2023.
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Order parameter dynamics in Mn$_3$Sn driven by DC and pulsed spin-orbit torques
Authors:
Ankit Shukla,
Siyuan Qian,
Shaloo Rakheja
Abstract:
We numerically investigate and develop analytic models for both the DC and pulsed spin-orbit-torque (SOT)-driven response of order parameter in single-domain Mn$_3$Sn, which is a metallic antiferromagnet with an anti-chiral 120$^\circ$ spin structure. We show that DC currents above a critical threshold can excite oscillatory dynamics of the order parameter in the gigahertz to terahertz frequency s…
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We numerically investigate and develop analytic models for both the DC and pulsed spin-orbit-torque (SOT)-driven response of order parameter in single-domain Mn$_3$Sn, which is a metallic antiferromagnet with an anti-chiral 120$^\circ$ spin structure. We show that DC currents above a critical threshold can excite oscillatory dynamics of the order parameter in the gigahertz to terahertz frequency spectrum. Detailed models of the oscillation frequency versus input current are developed and found to be in excellent agreement with the numerical simulations of the dynamics. In the case of pulsed excitation, the magnetization can be switched from one stable state to any of the other five stable states in the Kagome plane by tuning the duration or the amplitude of the current pulse. Precise functional forms of the final switched state versus the input current are derived, offering crucial insights into the switching dynamics of Mn$_3$Sn. The readout of the magnetic state can be carried out via either the anomalous Hall effect, or the recently demonstrated tunneling magnetoresistance in an all-Mn$_3$Sn junction. We also discuss possible disturbance of the magnetic order due to heating that may occur if the sample is subject to large currents. Operating the device in pulsed mode or using low DC currents reduces the peak temperature rise in the sample due to Joule heating. Our predictive modeling and simulation results can be used by both theorists and experimentalists to explore the interplay of SOT and the order dynamics in Mn$_3$Sn, and to further benchmark the device performance.
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Submitted 28 August, 2023; v1 submitted 15 May, 2023;
originally announced May 2023.
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Low Energy Neutrino and Mass Dark Matter Detection Using Freely Falling Atoms
Authors:
Alim Ruzi,
Sitian Qian,
Tianyi Yang,
Qiang Li
Abstract:
We propose a new method to detect low-energy neutrinos and low-mass dark matter at or below the MeV scale, through their coherent scatterings from freely falling heavy atoms and the resulting kinematic shifts. We start with a simple calculation for illustration: for $10^7$ heavy atoms of a mass number around 100 with a small recoil energy of 1 meV, the corresponding velocities can reach…
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We propose a new method to detect low-energy neutrinos and low-mass dark matter at or below the MeV scale, through their coherent scatterings from freely falling heavy atoms and the resulting kinematic shifts. We start with a simple calculation for illustration: for $10^7$ heavy atoms of a mass number around 100 with a small recoil energy of 1 meV, the corresponding velocities can reach $0.01, {\rm m/s}$ and produce significant kinematic shifts that can be detected. We then show that the proposed device should be able to probe vast low-energy regions of neutrinos from meV to MeV and can surpass previous limits on sub-MeV dark matter by several orders of magnitude. Such a proposal can be useful to (1) detect sub-MeV-scale dark matter: with $10^2$ atom guns shooting downwards, for example, CsI or lead clusters consisting of $10^{7}$ atoms with a frequency around $10^3$ Hz, it can already be sensitive to scattering cross-sections at the level of $10^{-33 (-34)}\rm{cm}^{2}$ for 1 (0.1) MeV dark matter and surpass current limits. Technological challenges include high-quality atom cluster production and injections. (2) Measure coherent neutrino-nuclei scatterings at the 0.1-1 MeV region for the first time: with $10^4$ atom guns shooting downwards CsI clusters consisting of $10^{11}$ atoms and a frequency of $10^{6}$ Hz. One can expect 10 events from MeV solar neutrinos to be observed per year. Furthermore, (3) this method can be extended to probe very low-energy neutrinos down to the eV-KeV region and may be able to detect the cosmic neutrino background, although it remains challenging.
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Submitted 4 March, 2023; v1 submitted 20 February, 2023;
originally announced February 2023.
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Materials, physics, and systems for multicaloric cooling
Authors:
Huilong Hou,
Suxin Qian,
Ichiro Takeuchi
Abstract:
The calls to minimize greenhouse gas emissions and the demands for higher energy efficiency continue to drive the research worldwide in alternative cooling and refrigeration technologies. The field of caloric cooling has undergone a series of transformations in the past several decades bolstered by the advent of new materials and devices, and these developments have helped fuel the advent of multi…
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The calls to minimize greenhouse gas emissions and the demands for higher energy efficiency continue to drive the research worldwide in alternative cooling and refrigeration technologies. The field of caloric cooling has undergone a series of transformations in the past several decades bolstered by the advent of new materials and devices, and these developments have helped fuel the advent of multicalorics in the past decade. Multicaloric materials systems inherently display one or more types of ferroic orders that can give rise to multiple field-induced phase transitions responsible for the caloric effects. Just as multiferroic materials possessing co-existing order parameters have unveiled a plethora of physical phenomena and applications over the years, multicaloric cooling materials have the potential to open up entirely new avenues for extracting heat and spearhead hitherto unknown technological applications. In this Perspective, we survey the emerging field of multicaloric cooling and explore the state-of-the-art caloric materials systems responsive to multiple fields. We present our visions of future applications of multicaloric and caloric cooling in general including key factors governing the overall system efficiency of the cooling devices.
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Submitted 23 November, 2021;
originally announced November 2021.
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$C_n$-symmetric higher-order topological crystalline insulators in atomically thin transition-metal dichalcogenides
Authors:
Shifeng Qian,
Gui-bin Liu,
Cheng-Cheng Liu,
Yugui Yao
Abstract:
Based on first-principles calculations and symmetry analysis, we predict atomically thin ($1-N$ layers) 2H group-VIB TMDs $MX_2$ ($M$ = Mo, W; $X$ = S, Se, Te) are large-gap higher-order topological crystalline insulators protected by $C_3$ rotation symmetry. We explicitly demonstrate the nontrivial topological indices and existence of the hallmark corner states with quantized fractional charge fo…
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Based on first-principles calculations and symmetry analysis, we predict atomically thin ($1-N$ layers) 2H group-VIB TMDs $MX_2$ ($M$ = Mo, W; $X$ = S, Se, Te) are large-gap higher-order topological crystalline insulators protected by $C_3$ rotation symmetry. We explicitly demonstrate the nontrivial topological indices and existence of the hallmark corner states with quantized fractional charge for these familiar TMDs with large bulk optical band gaps ($1.64-1.95$ eV for the monolayers), which would facilitate the experimental detection by STM. We find that the well-defined corner states exist in the triangular finite-size flakes with armchair edges of the atomically thin ($1-N$ layers) 2H group-VIB TMDs, and the corresponding quantized fractional charge is the number of layers $N$ divided by 3 modulo integers, which will simply double including spin degree of freedom.
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Submitted 7 September, 2021; v1 submitted 4 September, 2021;
originally announced September 2021.
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Second Order Topological Insulator State in Hexagonal Lattices and its Abundant Material Candidates
Authors:
Shifeng Qian,
Cheng-Cheng Liu,
Yugui Yao
Abstract:
We propose two mechanisms to realize the second order topological insulator (SOTI) state in spinless hexagonal lattices, viz., chemical modification and anti-Kekulé/Kekulé distortion of hexagonal lattice. Correspondingly, we construct two models and demonstrate the nontrivial band topology of the SOTI state characterized by the second Stiefel-Whitney class $w_2$ in the presence of inversion symmet…
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We propose two mechanisms to realize the second order topological insulator (SOTI) state in spinless hexagonal lattices, viz., chemical modification and anti-Kekulé/Kekulé distortion of hexagonal lattice. Correspondingly, we construct two models and demonstrate the nontrivial band topology of the SOTI state characterized by the second Stiefel-Whitney class $w_2$ in the presence of inversion symmetry ($\textit{P}$) and time-reversal symmetry ($\textit{T}$). Based on the two mechanisms and using first-principles calculations and symmetry analysis, we predict three categories of real light element material candidates, i.e., hydrogenated and halogenated 2D hexagonal group IV materials XY (X=C, Si, Ge, Sn, Y=H, F, Cl), 2D hexagonal group V materials (blue phosphorene, blue arsenene, and black phosphorene, black arsenene), and the recent experimentally synthesized anti-Kekulé/Kekulé order graphenes and the counterparts of silicene/germanene/stanene. We explicitly demonstrate the nontrivial topological invariants and existence of the protected corner states with fractional charge for these candidates with giant bulk band gap (up to 3.5 eV), which could facilitate the experimental verification by STM. Our approaches and proposed abundant real material candidates will greatly enrich 2D SOTIs and promote their intriguing physics research.
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Submitted 21 August, 2021;
originally announced August 2021.
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Aluminum Oxide at the Monolayer Limit via Oxidant-free Plasma-Assisted Atomic Layer Deposition on GaN
Authors:
Alex Henning,
Johannes D. Bartl,
Andreas Zeidler,
Simon Qian,
Oliver Bienek,
Chang-Ming Jiang,
Claudia Paulus,
Bernhard Rieger,
Martin Stutzmann,
Ian D. Sharp
Abstract:
Atomic layer deposition (ALD) is an essential tool in semiconductor device fabrication that allows the growth of ultrathin and conformal films to precisely form heterostructures and tune interface properties. The self-limiting nature of the chemical reactions during ALD provides excellent control over the layer thickness. However, in contrast to idealized growth models, it is experimentally challe…
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Atomic layer deposition (ALD) is an essential tool in semiconductor device fabrication that allows the growth of ultrathin and conformal films to precisely form heterostructures and tune interface properties. The self-limiting nature of the chemical reactions during ALD provides excellent control over the layer thickness. However, in contrast to idealized growth models, it is experimentally challenging to create continuous monolayers by ALD because surface inhomogeneities and precursor steric interactions result in island growth during film nucleation. Thus, the ability to create pin-hole free monolayers by ALD would offer new opportunities for controlling interfacial charge and mass transport in semiconductor devices, as well as for tailoring surface chemistry. Here, we report full encapsulation of c-plane gallium nitride (GaN) with an ultimately thin (~3 Å) aluminum oxide (AlOx) monolayer, which is enabled by the partial conversion of the GaN surface oxide into AlOx using a combination of trimethylaluminum deposition and hydrogen plasma exposure. Introduction of monolayer AlOx significantly modifies the physical and chemical properties of the surface, decreasing the work function and introducing new chemical reactivity to the GaN surface. This tunable interfacial chemistry is highlighted by the reactivity of the modified surface with phosphonic acids under standard conditions, which results in self-assembled monolayers with densities approaching the theoretical limit. More broadly, the presented monolayer AlOx deposition scheme can be extended to other dielectrics and III-V-based semiconductors, with significant relevance for applications in optoelectronics, chemical sensing, and (photo)electrocatalysis.
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Submitted 6 February, 2021;
originally announced February 2021.
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Effect of O-doping or N-vacancy on the structural, electronic and magnetic properties of MoSi2N4 monolayer
Authors:
Yan-Tong Bian,
Guang-Hua Liu,
Sheng-Hui Qian,
Xin-Xin Ding,
Hao-Xuan Liu
Abstract:
In this letter, the effect of four types of defects (ONout, ONin, VNout and VNin) on the structural, electronic and magnetic properties of MoSi2N4 monolayer were investigated using first-principles calculations. The calculated results reveal that all the four types of defects lead to structural distortions around the O-dopant or N-vacancy, and thereby change the lattice parameter and monolayer hei…
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In this letter, the effect of four types of defects (ONout, ONin, VNout and VNin) on the structural, electronic and magnetic properties of MoSi2N4 monolayer were investigated using first-principles calculations. The calculated results reveal that all the four types of defects lead to structural distortions around the O-dopant or N-vacancy, and thereby change the lattice parameter and monolayer height h. Specifically, ONout or ONin increases the lattice parameter, but VNout or VNin is on the contrary. ONout or VNout increases the monolayer height, whereas the height decreases for ONin or VNin. Each of the four types of defects has a fundamental effect on the electronic properties of MoSi2N4 monolayer, which can induce a transition from semiconductor to metal. ONin or VNin plays a vital role in the occurrence of a transition from non-magnetism to ferrimagnetism in MoSi2N4 monolayer. The effect of biaxial strain on the magnetic properties of the two systems with ONin and VNin was subsequently investigated. It is found that the total magnetic moments are less sensitive to biaxial strain whereas the local magnetic moments residing on the Mo atoms are increased for the two systems with ONin and VNin, as strain increases from -3% to 10% and from -9% to 10%, respectively. Furthermore, the magnetic phase transitions between ferrimagnetic and paramagnetic states were found to occur around -4% strain and within the range from -10% to -9% for the two systems with ONin and VNin, respectively. This study may provide a guidance for the application of MoSi2N4 monolayer in the spintronic and magnetic materials.
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Submitted 7 December, 2020;
originally announced December 2020.
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Schrödinger PCA: On the Duality between Principal Component Analysis and Schrödinger Equation
Authors:
Ziming Liu,
Sitian Qian,
Yixuan Wang,
Yuxuan Yan,
Tianyi Yang
Abstract:
Principal component analysis (PCA) has achieved great success in unsupervised learning by identifying covariance correlations among features. If the data collection fails to capture the covariance information, PCA will not be able to discover meaningful modes. In particular, PCA will fail the spatial Gaussian Process (GP) model in the undersampling regime, i.e. the averaged distance of neighboring…
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Principal component analysis (PCA) has achieved great success in unsupervised learning by identifying covariance correlations among features. If the data collection fails to capture the covariance information, PCA will not be able to discover meaningful modes. In particular, PCA will fail the spatial Gaussian Process (GP) model in the undersampling regime, i.e. the averaged distance of neighboring anchor points (spatial features) is greater than the correlation length of GP. Counterintuitively, by drawing the connection between PCA and Schrödinger equation, we can not only attack the undersampling challenge but also compute in an efficient and decoupled way with the proposed algorithm called Schrödinger PCA. Our algorithm only requires variances of features and estimated correlation length as input, constructs the corresponding Schrödinger equation, and solves it to obtain the energy eigenstates, which coincide with principal components. We will also establish the connection of our algorithm to the model reduction techniques in the partial differential equation (PDE) community, where the steady-state Schrödinger operator is identified as a second-order approximation to the covariance function. Numerical experiments are implemented to testify the validity and efficiency of the proposed algorithm, showing its potential for unsupervised learning tasks on general graphs and manifolds.
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Submitted 18 August, 2021; v1 submitted 8 June, 2020;
originally announced June 2020.
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Fatigue-resistant high-performance elastocaloric materials via additive manufacturing
Authors:
Huilong Hou,
Emrah Simsek,
Tao Ma,
Nathan S. Johnson,
Suxin Qian,
Cheikh Cisse,
Drew Stasak,
Naila Al Hasan,
Lin Zhou,
Yunho Hwang,
Reinhard Radermacher,
Valery I. Levitas,
Matthew J. Kramer,
Mohsen Asle Zaeem,
Aaron P. Stebner,
Ryan T. Ott,
Jun Cui,
Ichiro Takeuchi
Abstract:
Elastocaloric cooling, which exploits the latent heat released and absorbed as stress-induced phase transformations are reversibly cycled in shape memory alloys, has recently emerged as a frontrunner in non-vapor-compression cooling technologies. The intrinsically high thermodynamic efficiency of elastocaloric materials is limited only by work hysteresis. Here, we report on creating high-performan…
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Elastocaloric cooling, which exploits the latent heat released and absorbed as stress-induced phase transformations are reversibly cycled in shape memory alloys, has recently emerged as a frontrunner in non-vapor-compression cooling technologies. The intrinsically high thermodynamic efficiency of elastocaloric materials is limited only by work hysteresis. Here, we report on creating high-performance low-hysteresis elastocaloric cooling materials via additive manufacturing of Titanium-Nickel (Ti-Ni) alloys. Contrary to established knowledge of the physical metallurgy of Ti-Ni alloys, intermetallic phases are found to be beneficial to elastocaloric performances when they are combined with the binary Ti-Ni compound in nanocomposite configurations. The resulting microstructure gives rise to quasi-linear stress-strain behaviors with extremely small hysteresis, leading to enhancement in the materials efficiency by a factor of five. Furthermore, despite being composed of more than 50% intermetallic phases, the reversible, repeatable elastocaloric performance of this material is shown to be stable over one million cycles. This result opens the door for direct implementation of additive manufacturing to elastocaloric cooling systems where versatile design strategy enables both topology optimization of heat exchangers as well as unique microstructural control of metallic refrigerants.
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Submitted 21 August, 2019;
originally announced August 2019.
