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Advanced Spectroscopic Analyses on a:C-H Materials: Revisiting the EELS Characterization and its Coupling with multi-wavelength Raman Spectroscopy
Authors:
L. Lajaunie,
C. Pardanaud,
C. Martin,
P. Puech,
C. Hu,
M. J. Biggs,
R. Arenal
Abstract:
Hydrogenated amorphous carbon thin films (a:C-H) are very promising materials for numerous applications. The growing of relevance of a:C-H is mainly due to the long-term stability of their outstanding properties. For improving their performances, a full understanding of their local chemistry is highly required. Fifteen years ago, electron energy-loss spectroscopy (EELS), developed in a transmissio…
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Hydrogenated amorphous carbon thin films (a:C-H) are very promising materials for numerous applications. The growing of relevance of a:C-H is mainly due to the long-term stability of their outstanding properties. For improving their performances, a full understanding of their local chemistry is highly required. Fifteen years ago, electron energy-loss spectroscopy (EELS), developed in a transmission electron microscope (TEM), was the technique of choice to extract such kind of quantitative information on these materials. Other optical techniques, as Raman spectroscopy, are now clearly favored by the scientific community. However, they still lack of the spatial resolution offered by TEM-EELS. In addition, nowadays, the complexity of the physics phenomena behind EELS is better known. Here, a:C-H thin films have been isothermally annealed and the evolution of their physical and chemical parameters have been monitored at the local and macroscopic scales. In particular, chemical in-depth inhomogeneities and their origins are highlighted. Furthermore, a novel procedure to extract properly and reliably quantitative chemical information from EEL spectra is presented. Finally, the pertinence of empirical models used by the Raman community is discussed. These works demonstrate the pertinence of the combination of local and macroscopic analyses for a proper study of such complex materials.
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Submitted 21 January, 2025;
originally announced January 2025.
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Raman analysis of the dehydrogenation process of hydrogenated monolayer graphene
Authors:
Tom Fournier,
Kelvin Cruz,
Marc Monthioux,
Benjamin Lassagne,
Lionel Petit,
Sébastien Moyano,
Pascal Puech,
Fabrice Piazza
Abstract:
Creating defects in graphene by hydrogenation, either to achieve hydrogen chemisorption or partial etching, is a way to open an electronic band gap in graphene. Understanding the range of stability conditions of partially etched or hydrogenated graphene is crucial for application, as processing conditions (e.g. temperature) and quality control (characterization) conditions may result in modifying…
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Creating defects in graphene by hydrogenation, either to achieve hydrogen chemisorption or partial etching, is a way to open an electronic band gap in graphene. Understanding the range of stability conditions of partially etched or hydrogenated graphene is crucial for application, as processing conditions (e.g. temperature) and quality control (characterization) conditions may result in modifying the material through partial or full dehydrogenation, and subsequent alteration of its electronic properties. This work reports a study of various dehydrogenation conditions of hydrogenated or hydrogen-etched monolayer graphene (1LG), either free-standing or supported by an interferential (SiO2/Si) substrate, using incremental annealing under nitrogen atmosphere up to 400 {\textdegree}C. Materials were investigated by Raman spectroscopy. Indeed, it has been known since 2012 that the intensity ratio of two Raman bands activated by double resonance, D over D' (ID/ID') can be used to identify the type of defects in defective graphene. It is shown that hydrogenated 1LG, characterized by a large ID/ID' ratio (~9-15), is stable provided annealing remains below 300 {\textdegree}C. On the other hand, defective 1LG resulting from hydrogen etching remains stable up to 400 {\textdegree}C, whether the 1LG is hydrogenated on one side or both sides, while a modification in the type and proportions of defects is likely. Experimental conditions for the safe use of Raman spectroscopy, otherwise able to induce specimen overheating because of the laser energy and power, are also determined and discussed.
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Submitted 28 May, 2024;
originally announced May 2024.
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Performance of graphene Hall effect sensors: role of bias current, disorder and Fermi velocity
Authors:
Lionel Petit,
Tom Fournier,
Géraldine Ballon,
Cédric Robert,
Delphine Lagarde,
Pascal Puech,
Thomas Blon,
Benjamin Lassagne
Abstract:
Graphene Hall effect magnetic field sensors hold great promise for the development of ultra-sensitive magnetometers. Their performance is frequently analysed using the two-channel model where electron and hole conductivities are simply added. Unfortunately, this model is unable to capture all the features of the sensor, particularly the bias current dependence of the magnetic field sensitivity. He…
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Graphene Hall effect magnetic field sensors hold great promise for the development of ultra-sensitive magnetometers. Their performance is frequently analysed using the two-channel model where electron and hole conductivities are simply added. Unfortunately, this model is unable to capture all the features of the sensor, particularly the bias current dependence of the magnetic field sensitivity. Here we present an advanced model that provides an in-depth understanding of how graphene Hall sensors operate, and demonstrate its ability to quantitatively assess their performance. First, we report the fabrication of sensors with different qualities of graphene, with the best devices achieving magnetic field sensitivities as high as 5000 ohms/T, outperforming the best silicon and narrow-gap semiconductor-based sensors. Then, we examine their performance in detail using the proposed numerical model, which combines Boltzmann formalism, with distinct Fermi levels for electrons and holes, and a new method for the introduction of substrate-induced electron-hole puddles. Importantly, the dependences of magnetic field sensitivity on bias current, disorder, substrate and Hall bar geometry are quantitatively reproduced for the first time. In addition, the model emphasizes that the performance of devices with widths of the order of the charge carrier diffusion length, is significantly affected by the bias current due to the occurrence of large and non-symmetric carrier accumulation and depletion areas near the edges of the Hall bar. The formation of these areas induces a transverse diffusion particle flux capable of counterbalancing the particle flux induced by the Lorentz force when the Hall electric field cancels out in the ambipolar regime. Finally, we discuss how sensor performance can be enhanced by Fermi velocity engineering, paving the way for future ultra-sensitive graphene Hall effect sensors.
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Submitted 4 October, 2024; v1 submitted 17 March, 2024;
originally announced March 2024.
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Multiwavelength electron diffraction as a tool for identifying stacking sequences in 2D materials
Authors:
Pascal Puech,
Iann Gerber,
Fabrice Piazza,
Marc Monthioux
Abstract:
Two-dimensional (2D) materials are among the most studied ones nowadays, because of their unique properties. These materials are made of, single- or few atom-thick layers assembled by van der Waals forces, hence allowing a variety of stacking sequences possibly resulting in a variety of crystallographic structures as soon as the sequences are periodic. Taking the example of few layer graphene (FLG…
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Two-dimensional (2D) materials are among the most studied ones nowadays, because of their unique properties. These materials are made of, single- or few atom-thick layers assembled by van der Waals forces, hence allowing a variety of stacking sequences possibly resulting in a variety of crystallographic structures as soon as the sequences are periodic. Taking the example of few layer graphene (FLG), it is of an utmost importance to identify both the number of layers and the stacking sequence, because of the driving role these parameters have on the properties. For this purpose, analysing the spot intensities of electron diffraction patterns (DPs) is commonly used, along with attempts to vary the number of layers, and the specimen tilt angle. However, the number of sequences able to be discriminated this way remains few, because of the similarities between the DPs. Also, the possibility of the occurrence of C layers in addition to A and/or B layers in FLG has been rarely considered. To overcome this limitation, we propose here a new methodology based on multi-wavelength electron diffraction which is able to discriminate between stacking sequences up to 6 layers (potentially more) involving A, B, and C layers. We also propose an innovative method to calculate the spot intensities in an easier and faster way than the standard ones. Additionally, we show that the method is valid for transition metal dichalcogenides, taking the example of MoS2.
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Submitted 16 December, 2020;
originally announced December 2020.
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Mo Thio and Oxo-Thio Molecular Complexes Film as Self-Healing Catalyst for Photocatalytic Hydrogen Evolution on 2D Materials
Authors:
Juliana Barros Barbosa,
Pierre Louis Taberna,
Valerie Bourdon,
Iann C. Gerber,
Romuald Poteau,
Andrea Balocchi,
Xavier Marie,
Jerome Esvan,
Pascal Puech,
Antoine Barnabé,
Lucianna Da Gama Fernandes Vieira,
Ionut-Tudor Moraru,
Jean Yves Chane-Ching
Abstract:
2D semiconducting nanosheets of Transition Metal Dichalcogenides are attractive materials for solar energy conversion because of their unique absorption properties. Here, we propose Mo thio- and oxo-thio-complexes anchored on 2D p-WSe2 nanosheets for efficient water splitting under visible light irradiation with photocurrent density up to 2.0 mA cm-2 at -0.2 V/NHE. Besides developing high electro-…
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2D semiconducting nanosheets of Transition Metal Dichalcogenides are attractive materials for solar energy conversion because of their unique absorption properties. Here, we propose Mo thio- and oxo-thio-complexes anchored on 2D p-WSe2 nanosheets for efficient water splitting under visible light irradiation with photocurrent density up to 2.0 mA cm-2 at -0.2 V/NHE. Besides developing high electro-catalytic activity, the Mo complexe films were shown to display ability to heal surface defects. We propose that the observed healing of surface defects arises from the strong adsorption on point defects of the 2D WSe2 substrate of Mo complexes such as (MoS4)2-, (MoOS3)2-, (Mo2S6O2)2- as shown from DFT calculations. In addition to display catalytic and healing effects, the thio-, oxo-thio Mo complexes films were shown to enhance charge carrier separation and migration for the hydrogen evolution reaction, thus representing an example of multicomponent passivation layer exhibiting multiple properties.
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Submitted 13 March, 2020;
originally announced March 2020.
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Towards a better understanding of the structure of diamanoïds and diamanoïd/graphene hybrids
Authors:
Fabrice Piazza,
Marc Monthioux,
Pascal Puech,
Iann C. Gerber
Abstract:
Hot-filament process was recently employed to convert, totally or partially, few-layer graphene (FLG) with Bernal stacking into crystalline sp$^3$-C sheets at low pressure. Those materials constitute new synthetic carbon nanoforms. The result reported earlier relies on Raman spectroscopy and Fourier transform infrared microscopy. As soon as the number of graphene layers in the starting FLG is high…
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Hot-filament process was recently employed to convert, totally or partially, few-layer graphene (FLG) with Bernal stacking into crystalline sp$^3$-C sheets at low pressure. Those materials constitute new synthetic carbon nanoforms. The result reported earlier relies on Raman spectroscopy and Fourier transform infrared microscopy. As soon as the number of graphene layers in the starting FLG is higher than 2-3, the sp$^2$-C to sp$^3$-C conversion tends to be partial only. We hereby report new evidences confirming the sp$^2$-C to sp$^3$-C conversion from electron diffraction at low energy,Raman spectroscopy and Density Functional Theory (DFT) calculations. Partial sp$^2$-C to sp$^3$-C conversion generates couples of twisted, superimposed coherent domains (TCD), supposedly because of stress relaxation, which are evidenced by electron diffraction and Raman spectroscopy. TCDs come with the occurrence of a twisted bilayer graphene feature located at the interface between the upper diamanoïd domain and the non-converted graphenic domain underneath, as evidenced by a specific Raman signature consistent with the literature. DFT calculations show that the up-to-now poorly understood Raman T peak originates from a sp$^2$-C-sp$^3$-C mixt layer located between a highly hydrogenated sp$^3$-C surface layer and an underneath graphene layer.
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Submitted 21 July, 2019;
originally announced July 2019.
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Chirality of internal metallic and semiconducting carbon nanotubes
Authors:
R. R. Bacsa,
A. Peigney,
Ch. Laurent,
P. Puech,
W. S. Bacsa
Abstract:
We have assigned the chirality of the internal tubes of double walled carbon nanotubes grown by catalytic chemical vapor deposition using the high sensitivity of the radial breathing mode (RB) in inelastic light scattering experiments. The deduced chirality corresponds to several semiconducting and only two metallic internal tubes. The RB modes are systematically shifted to higher energies when…
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We have assigned the chirality of the internal tubes of double walled carbon nanotubes grown by catalytic chemical vapor deposition using the high sensitivity of the radial breathing mode (RB) in inelastic light scattering experiments. The deduced chirality corresponds to several semiconducting and only two metallic internal tubes. The RB modes are systematically shifted to higher energies when compared to theoretical values. The difference between experimental and theoretical energies of the RB modes of metallic tubes and semiconducting tubes are discussed interms of the reduced interlayer distance between the internal and the external tube and electronic resonance effects. We find several pairs of RB modes corresponding to different diameters of internal and external tubes.
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Submitted 23 November, 2001;
originally announced November 2001.
