-
Electrostatically-induced strain of graphene on GaN nanorods
Authors:
Jakub Kierdaszuk,
Rafał Bożek,
Tomasz Stefaniuk,
Ewelina Możdzyńska,
Karolina Piętak-Jurczak,
Sebastian Złotnik,
Vitaly Zubialevich,
Aleksandra Przewłoka,
Aleksandra Krajewska,
Wawrzyniec Kaszub,
Marta Gryglas-Borysiewicz,
Andrzej Wysmołek,
Johannes Binder,
Aneta Drabińska
Abstract:
Few-layer graphene deposited on semiconductor nanorods separated by undoped spacers has been studied in perspective for the fabrication of stable nanoresonators. We show that an applied bias between the graphene layer and the nanorod substrate affects the graphene electrode in two ways: 1) by a change of the carrier concentration in graphene and 2) by inducing strain, as demonstrated by the Raman…
▽ More
Few-layer graphene deposited on semiconductor nanorods separated by undoped spacers has been studied in perspective for the fabrication of stable nanoresonators. We show that an applied bias between the graphene layer and the nanorod substrate affects the graphene electrode in two ways: 1) by a change of the carrier concentration in graphene and 2) by inducing strain, as demonstrated by the Raman spectroscopy. The capacitance of the investigated structures scales with the area of graphene in contact with the nanorods. Due to the reduced contact surface, the efficiency of graphene gating is one order of magnitude lower than for a comparable structure without nanorods. The shift of graphene Raman modes observed under bias clearly shows the presence of electrostatically-induced strain and only a weak modification of carrier concentration, both independent of number of graphene layers. A higher impact of bias on strain was observed for samples with a larger contact area between the graphene and the nanorods which shows perspective for the construction of sensors and nanoresonator devices.
△ Less
Submitted 6 July, 2023;
originally announced July 2023.
-
Pseudomagnetic fields and strain engineering: graphene on GaN nanowires
Authors:
Jakub Kierdaszuk,
Paweł Dąbrowski,
Maciej Rogala,
Paweł Krukowski,
Aleksandra Przewłoka,
Aleksandra Krajewska,
Wawrzyniec Kaszub,
Marta Sobanska,
Zbigniew R. Zytkiewicz,
Vitaly Z. Zubialevich,
Paweł J. Kowalczyk,
Andrzej Wysmołek,
Johannes Binder,
Aneta Drabińska
Abstract:
Gallium nitride nanowire and nanorod substrates with different morphology are prospective platforms allowing to control the local strain distribution in graphene films top of them, resulting in an induction of pseudomagnetic fields. Atomic force microscopy measurements performed in a HybriD mode complemented by scanning electron microscopy allow for a detailed visualization of the strain distribut…
▽ More
Gallium nitride nanowire and nanorod substrates with different morphology are prospective platforms allowing to control the local strain distribution in graphene films top of them, resulting in an induction of pseudomagnetic fields. Atomic force microscopy measurements performed in a HybriD mode complemented by scanning electron microscopy allow for a detailed visualization of the strain distribution on graphene surface. Graphene in direct contact with supporting regions is tensile strained, while graphene located in-between is characterized by lower strain. Characteristic tensile strained wrinkles also appear in the areas between the supporting regions. A detailed analysis of the strain distribution shows positive correlation between strain gradient and distances between borders of supporting regions. These results are confirmed by Raman spectroscopy by analysis the D' band intensity, which is affected by an enhancement of intravalley scattering. Furthermore, scanning tunneling spectroscopy shows a local modification of the density of states near the graphene wrinkle and weak localization measurements indicate the enhancement of pseudomagnetic field-induced scattering. Therefore, we show that nanowire and nanorod substrates provide strain engineering and induction of pseudomagnetic fields in graphene. The control of graphene morphology by a modification of distances between supporting regions is promising for both further fundamental research and the exploration of innovative ways to fabricate pseudomagnetic field-based devices like sensors or filters.
△ Less
Submitted 31 July, 2021;
originally announced August 2021.
-
Highly effective gating of graphene on GaN
Authors:
Jakub Kierdaszuk,
Ewelina Rozbiegała,
Karolina Piętak,
Sebastian Złotnik,
Aleksandra Przewłoka,
Aleksandra Krajewska,
Wawrzyniec Kaszub,
Maria Kamińska,
Andrzej Wysmołek,
Johannes Binder,
Aneta Drabińska
Abstract:
By using four layered graphene/gallium nitride (GaN) Schottky diodes with an undoped GaN spacer, we demonstrate highly effective gating of graphene at low bias rendering this type of structure very promising for potential applications. An observed Raman G band position shift larger than 8.5 cm-1 corresponds to an increase in carrier concentration of about 1.2x10^13 cm-2. The presence of a distinct…
▽ More
By using four layered graphene/gallium nitride (GaN) Schottky diodes with an undoped GaN spacer, we demonstrate highly effective gating of graphene at low bias rendering this type of structure very promising for potential applications. An observed Raman G band position shift larger than 8.5 cm-1 corresponds to an increase in carrier concentration of about 1.2x10^13 cm-2. The presence of a distinct G band splitting together with a narrow symmetric 2D band indicates turbostratic layer stacking and suggests the presence of a high potential gradient near the Schottky junction even at zero bias. The subbands characterized by the highest Raman energies correspond to the largest concentration of electrons. An analysis based on electroreflectance measurements and a modified Richardson equation confirmed that graphene on n-GaN separated by an undoped GaN spacer behaves like a capacitor at reverse bias. At least 60% of G subband position shifts occur at forward bias, which is related to a rapid reduction of electric field near the Schottky junction. Raman micromapping shows a high uniformity of gating efficiency on the surface. Therefore, our studies demonstrate the usefulness of few layer turbostratic graphene deposited on GaN for tracing electron-phonon coupling in graphene. Multilayer graphene also provides uniform and stable electric contacts. Moreover, the observed bias sensitive G band splitting can be used as an indicator of charge transfer in sensor applications in the low bias regime.
△ Less
Submitted 13 April, 2021; v1 submitted 4 February, 2021;
originally announced February 2021.
-
Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects
Authors:
Jakub Kierdaszuk,
Piotr Kaźmierczak,
Justyna Grzonka,
Aleksandra Krajewska,
Aleksandra Przewłoka,
Wawrzyniec Kaszub,
Zbigniew R. Zytkiewicz,
Marta Sobanska,
Maria Kamińska,
Andrzej Wysmołek,
Aneta Drabińska
Abstract:
We present detailed Raman studies of graphene deposited on gallium nitride nanowires with different variations in height. Our results show that different density and height of nanowires being in contact with graphene impact graphene properties like roughness, strain and carrier concentration as well as density and type of induced defects. Detailed analysis of Raman spectra of graphene deposited on…
▽ More
We present detailed Raman studies of graphene deposited on gallium nitride nanowires with different variations in height. Our results show that different density and height of nanowires being in contact with graphene impact graphene properties like roughness, strain and carrier concentration as well as density and type of induced defects. Detailed analysis of Raman spectra of graphene deposited on different nanowire substrates shows that bigger differences in nanowires height increase graphene strain, while higher number of nanowires in contact with graphene locally reduce the strain. Moreover, the value of graphene carrier concentration is found to be correlated with the density of nanowires in contact with graphene. Analysis of intensity ratios of Raman G, D and D' bands enable to trace how nanowire substrate impacts the defect concentration and type. The lowest concentration of defects is observed for graphene deposited on nanowires of the lowest density. Contact between graphene and densely arranged nanowires leads to a large density of vacancies. On the other hand, grain boundaries are the main type of defects in graphene on rarely distributed nanowires. Our results also show modification of graphene carrier concentration and strain by different types of defects present in graphene.
△ Less
Submitted 8 October, 2018;
originally announced October 2018.
-
Surface-enhanced Raman scattering in graphene deposited on Al$_x$Ga$_{1-x}$N/GaN axial heterostructure nanowires
Authors:
Jakub Kierdaszuk,
Mateusz Tokarczyk,
Krzysztof M. Czajkowski,
Rafał Bożek,
Aleksandra Krajewska,
Aleksandra Przewłoka,
Wawrzyniec Kaszub,
Marta Sobanska,
Zbigniew R. Zytkiewicz,
Grzegorz Kowalski,
Tomasz J. Antosiewicz,
Maria Kamińska,
Andrzej Wysmołek,
Aneta Drabińska
Abstract:
The surface-enhanced Raman scattering in graphene deposited on AlxGa1-xN/GaN axial heterostructure nanowires was investigated. The intensity of graphene Raman spectra was found not to be correlated with aluminium content. Analysis of graphene Raman bands parameters, KPFM and electroreflectance showed a screening of polarization charges. Theoretical calculations showed that plasmon resonance in gra…
▽ More
The surface-enhanced Raman scattering in graphene deposited on AlxGa1-xN/GaN axial heterostructure nanowires was investigated. The intensity of graphene Raman spectra was found not to be correlated with aluminium content. Analysis of graphene Raman bands parameters, KPFM and electroreflectance showed a screening of polarization charges. Theoretical calculations showed that plasmon resonance in graphene is far beyond the Raman spectral range. This excludes the presence of an electromagnetic mechanism of SERS and therefore suggests the chemical mechanism of enhancement.
△ Less
Submitted 6 August, 2018;
originally announced August 2018.
