Bond Model and Group Theory of Second Harmonic Generation in GaAs(001)
Authors:
Hendradi Hardhienata,
Adalberto Alejo-Molina,
Andrii Prylepa,
Cornelia Reitböck,
David Stifter,
Kurt Hingerl
Abstract:
A comprehensive analysis of second harmonic generation (SHG) in a diatomic zincblende crystal based on the Simplified Bond Hyperpolarizability Model (SBHM), Group Theory (GT) is presented. The third rank tensor between the two approaches are compared and applied to reproduce rotational anisotropy (RA) SHG experimental result.It is well known that such a crystal is noncentrosymmetric, therefore the…
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A comprehensive analysis of second harmonic generation (SHG) in a diatomic zincblende crystal based on the Simplified Bond Hyperpolarizability Model (SBHM), Group Theory (GT) is presented. The third rank tensor between the two approaches are compared and applied to reproduce rotational anisotropy (RA) SHG experimental result.It is well known that such a crystal is noncentrosymmetric, therefore the second harmonic generation source is dominated by bulk dipoles with a SHG polarization $P_{BD}=χ_{ijk}^{(2)}E(ω)E(ω)$. We show that the SBHM previously applied to mono crystal system such as Silicon can also be applied to an atomic cell containing two different atoms e.g. GaAs by introducing an effective hyperpolarizability $α_{2GaAs}=\left(α_{2Ga}-α_{2As}\right)$ . Comparison with GT yields the same third rank tensor for a $T_d$ point group corresponding to bulk tetrahedral structure. Interestingly, SBHM gives good agreement with RASHG experiment of GaAs using only one single fitting parameter when Fresnel analysis is also incorporated in the model.
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Submitted 12 September, 2014; v1 submitted 6 August, 2014;
originally announced August 2014.
Simplified bond-hyperpolarizability model of second-harmonic-generation in Si(111): theory and experiment
Authors:
Hendradi Hardhienata,
Andrii Prylepa,
David Stifter,
Kurt Hingerl
Abstract:
Second-harmonic-generation (SHG) in centrosymmetric material such as Si(111) is usually understood either from the phenomenology theory or more recently using the Simplified Bond-Hyperpolarizability Model (SBHM) [G. D. Powell, J. F. Wang, and D. E. Aspnes, Phys. Rev. B 65, 205320/1 (2002)]. Although SBHM is derived from a classical point of view, it has the advantage over the former that it gives-…
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Second-harmonic-generation (SHG) in centrosymmetric material such as Si(111) is usually understood either from the phenomenology theory or more recently using the Simplified Bond-Hyperpolarizability Model (SBHM) [G. D. Powell, J. F. Wang, and D. E. Aspnes, Phys. Rev. B 65, 205320/1 (2002)]. Although SBHM is derived from a classical point of view, it has the advantage over the former that it gives-especially for lower symmetry systems- a clear physical picture and a more efficient explanation of how nonlinearity is generated. In this paper we provide a step-by-step description of the SBHM in Si(111) for the linear and second harmonic case. We present a SHG experiment of Si(111) and show how it can be modelled by summing up the contribution of the fields produced by the anharmonic motion along the bonds.
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Submitted 14 March, 2013; v1 submitted 2 December, 2012;
originally announced December 2012.
