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Estimating Evaporation Fields and Specific Heats Through Atom Probe Tomography
Authors:
Andrew P. Proudian,
Jeramy D. Zimmerman
Abstract:
Estimations of evaporation field values in atom probe tomography (APT) literature are sparse despite their importance in the reconstruction and data analysis process. This work describes a straightforward method for estimating the zero-barrier evaporation field ($F_E$) that uses the measured voltage vs. laser pulse energy for a constant evaporation rate. This estimate depends on the sample radius…
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Estimations of evaporation field values in atom probe tomography (APT) literature are sparse despite their importance in the reconstruction and data analysis process. This work describes a straightforward method for estimating the zero-barrier evaporation field ($F_E$) that uses the measured voltage vs. laser pulse energy for a constant evaporation rate. This estimate depends on the sample radius of curvature and its specific heat ($C_p$). If a similar measurement is made of the measured voltage vs. base temperature for a fixed evaporation rate, direct extraction of the material's $C_p$ can be made, leaving only the sample radius of curvature as an input parameter. The method is applied to extract $F_E$ from a previously published voltage vs. laser pulse energy dataset for CdTe ($18.07 \pm 0.87~\mathrm{V~nm^{-1}}$); furthermore, using the published voltage vs. base-temperature sweep of CdTe permits extraction of a specific heat ($11.27 \pm 2.54~\mathrm{J~K^{-1}mol^{-1}}$ at $23.1~\mathrm{K}$) in good agreement with the literature ($11.14~\mathrm{J~K^{-1}mol^{-1}}$ at $22.17~\mathrm{K}$). The method is then applied to the previously uncharacterized material tris[2-phenylpyridinato-C2,N]iridium(III) ($\mathrm{Ir(ppy)_3}$), yielding $F_E = 7.49 \pm 0.96~\mathrm{V~nm^{-1}}$ and $C_p = 173 \pm 27~\mathrm{J~K^{-1} mol^{-1}}$; this $F_E$ is much lower than most materials characterized with APT to date.
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Submitted 4 August, 2020;
originally announced August 2020.
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Using Ripley's K-function to Characterize Clustering In 3-Dimensional Point Patterns With a Case Study in Atom Probe Tomography
Authors:
Galen B. Vincent,
Andrew P. Proudian,
Jeramy D. Zimmerman
Abstract:
The size and structure of spatial molecular and atomic clustering can significantly impact material properties and is therefore important to accurately quantify. Ripley's K-function (K(r)), a measure of spatial correlation, can be used to perform such quantification when the material system of interest can be represented as a marked point pattern. This work demonstrates how machine learning models…
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The size and structure of spatial molecular and atomic clustering can significantly impact material properties and is therefore important to accurately quantify. Ripley's K-function (K(r)), a measure of spatial correlation, can be used to perform such quantification when the material system of interest can be represented as a marked point pattern. This work demonstrates how machine learning models based on K(r)-derived metrics can accurately estimate cluster size and intra-cluster density in simulated three dimensional (3D) point patterns containing spherical clusters of varying size; over 90% of model estimates for cluster size and intra-cluster density fall within 11% and 18% error of the true values, respectively. These K(r)-based size and density estimates are then applied to an experimental APT reconstruction to characterize MgZn clusters in a 7000 series aluminum alloy. We find that the estimates are more accurate, consistent, and robust to user interaction than estimates from the popular maximum separation algorithm. Using K(r) and machine learning to measure clustering is an accurate and repeatable way to quantify this important material attribute.
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Submitted 31 July, 2020;
originally announced July 2020.
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Atom Probe Tomography of Organic Molecular Materials: Sub-Dalton Nanometer-Scale Quantification
Authors:
Andrew P. Proudian,
Matthew B. Jaskot,
David R. Diercks,
Brian P. Gorman,
Jeramy D. Zimmerman
Abstract:
In this paper, we demonstrate that atom probe tomography (APT) can be applied to small-molecule organic materials. We show that APT can provide an unprecedented combination of mass resolution of $\lt 1~\mathrm{Da}$, spatial resolution of $\sim 0.3~\mathrm{nm}$ in z and $\sim 1~\mathrm{nm}$ in x-y, and analytic sensitivity of $\sim 50~\mathrm{ppm}$ with no evidence of molecular fragmentation. We di…
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In this paper, we demonstrate that atom probe tomography (APT) can be applied to small-molecule organic materials. We show that APT can provide an unprecedented combination of mass resolution of $\lt 1~\mathrm{Da}$, spatial resolution of $\sim 0.3~\mathrm{nm}$ in z and $\sim 1~\mathrm{nm}$ in x-y, and analytic sensitivity of $\sim 50~\mathrm{ppm}$ with no evidence of molecular fragmentation. We discuss two systems that demonstrate the power of APT to uncover structure-property relationships in organic systems that have proven extremely difficult to probe using existing techniques: (1) a previously published model organic photovoltaic system in which we show a chemical reaction occurs at the heterointerface; and (2) a model organic light-emitting diode system in which we show molecular segregation occurs in the emissive layer bulk. These examples illustrate the power of APT to enable new insights into organic molecular materials.
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Submitted 5 August, 2020; v1 submitted 27 June, 2018;
originally announced June 2018.
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Modeling the effect of transient violations of the second law of thermodynamics on heat transfer in silicon nanowire
Authors:
Andrew P. Proudian,
Susanta K. Sarkar
Abstract:
Violations of the second law of thermodynamics for small systems well below the thermodynamic limit has already been experimentally observed. However, the effects of such violations on experimentally measurable quantities have not been studied in detail. Here we report the effect of transient violations, i.e., spontaneous transfer of heat from cold to hot objects, on heat transfer in silicon nanow…
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Violations of the second law of thermodynamics for small systems well below the thermodynamic limit has already been experimentally observed. However, the effects of such violations on experimentally measurable quantities have not been studied in detail. Here we report the effect of transient violations, i.e., spontaneous transfer of heat from cold to hot objects, on heat transfer in silicon nanowire by modeling the violations as a Poisson process. Our modeling and simulations show that it is increasingly difficult to cool down the nanoscale objects to the bath temperature, there is a transition from power law to exponential behavior, and the fluctuations have inverse square law dependence on number of sites.
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Submitted 6 June, 2016;
originally announced June 2016.
