Ostwald ripening in an oxide-on-metal system
Authors:
Natalia Michalak,
Tomasz Ossowski,
Zygmunt Miłosz,
Mauricio J. Prieto,
Ying Wang,
Mirosław Werwiński,
Visnja Babacic,
Francesca Genuzio,
Luca Vattuone,
Adam Kiejna,
Thomas Schmidt,
Mikołaj Lewandowski
Abstract:
Ostwald ripening is a well-known physicochemical phenomenon in which smaller particles, characterized by high surface energy, dissolve and feed the bigger ones that are thermodynamically more stable. The effect is commonly observed in solid and liquid solutions, as well as in systems consisting of supported metal clusters or liquid droplets. Here, we provide the first evidence for the occurrence o…
▽ More
Ostwald ripening is a well-known physicochemical phenomenon in which smaller particles, characterized by high surface energy, dissolve and feed the bigger ones that are thermodynamically more stable. The effect is commonly observed in solid and liquid solutions, as well as in systems consisting of supported metal clusters or liquid droplets. Here, we provide the first evidence for the occurrence of Ostwald ripening in an oxide-on-metal system which, in our case, consists of ultrathin iron monoxide (FeO) islands grown on Ru(0001) single-crystal support. The results reveal that the thermally-driven sintering of islands allows altering their fine structural characteristics, including size, perimeter length, defect density and stoichiometry, which are crucial, e.g., from the point of view of heterogeneous catalysis.
△ Less
Submitted 19 January, 2022; v1 submitted 3 May, 2021;
originally announced May 2021.
Low Temperature Growth of Graphene on Semiconductor
Authors:
Håkon I. Røst,
Rajesh K. Chellappan,
Frode S. Strand,
Antonija Grubišić-Čabo,
Benjamen P. Reed,
Mauricio J. Prieto,
Liviu C. Tǎnase,
Lucas de Souza Caldas,
Thipusa Wongpinij,
Chanan Euaruksakul,
Thomas Schmidt,
Anton Tadich,
Bruce C. C. Cowie,
Zheshen Li,
Simon P. Cooil,
Justin W. Wells
Abstract:
The industrial realization of graphene has so far been limited by challenges related to the quality, reproducibility, and high process temperatures required to manufacture graphene on suitable substrates. We demonstrate that epitaxial graphene can be grown on transition metal treated 6H-SiC(0001) surfaces, with an onset of graphitization starting around $450-500^\circ\text{C}$. From the chemical r…
▽ More
The industrial realization of graphene has so far been limited by challenges related to the quality, reproducibility, and high process temperatures required to manufacture graphene on suitable substrates. We demonstrate that epitaxial graphene can be grown on transition metal treated 6H-SiC(0001) surfaces, with an onset of graphitization starting around $450-500^\circ\text{C}$. From the chemical reaction between SiC and thin films of Fe or Ru, $\text{sp}^{3}$ carbon is liberated from the SiC crystal and converted to $\text{sp}^{2}$ carbon at the surface. The quality of the graphene is demonstrated using angle-resolved photoemission spectroscopy and low-energy electron diffraction. Furthermore, the orientation and placement of the graphene layers relative to the SiC substrate is verified using angle-resolved absorption spectroscopy and energy-dependent photoelectron spectroscopy, respectively. With subsequent thermal treatments to higher temperatures, a steerable diffusion of the metal layers into the bulk SiC is achieved. The result is graphene supported on magnetic silicide or optionally, directly on semiconductor, at temperatures ideal for further large-scale processing into graphene based device structures.
△ Less
Submitted 27 November, 2020;
originally announced November 2020.
