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Simplifying higher-order perturbation theory for ring-shaped Bose-Hubbard systems
Authors:
Meret Preuß
Abstract:
In this paper, higher-order perturbation theory is applied and tailored to one-dimensional ring-shaped Bose-Hubbard systems. Spectral and geometrical properties are used to structurally simplify the contributions and reduce computational effort without sacrificing accuracy. For this, a guide for the computation of the individual perturbational orders up to order nine is provided, alongside a both…
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In this paper, higher-order perturbation theory is applied and tailored to one-dimensional ring-shaped Bose-Hubbard systems. Spectral and geometrical properties are used to structurally simplify the contributions and reduce computational effort without sacrificing accuracy. For this, a guide for the computation of the individual perturbational orders up to order nine is provided, alongside a both system-specific and parametrization-dependent convergence criterion. The simplification scheme described is found to be applicable to a wider class of Bose-Hubbard systems with different lattice geometries. An exemplary validation of these findings is included in the form of explicit calculations of ground state energies of the three-site Bose-Hubbard system with repulsive on-site interactions. These calculations are successfully checked against numerical computations of exact diagonalization results.
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Submitted 3 June, 2025;
originally announced June 2025.
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Circularly polarised electroluminescence from chiral excitons in vacuum-sublimed supramolecular semiconductor thin films
Authors:
Rituparno Chowdhury,
Marco D. Preuss,
Hwan-Hee Cho,
Joshua J. P. Thompson,
Samarpita Sen,
Tomi Baikie,
Pratyush Ghosh,
Yorrick Boeije,
Xian-Wei Chua,
Kai-Wei Chang,
Erjuan Guo,
Joost van der Tol,
Bart W. L. van den Bersselaar,
Andrea Taddeucci,
Nicolas Daub,
Daphne M. Dekker,
Scott T. Keene,
Ghislaine Vantomme,
Bruno Ehrler,
Stefan C. J. Meskers,
Akshay Rao,
Bartomeu Monserrat,
E. W. Meijer,
Richard H. Friend
Abstract:
Materials with chiral electronic structures are of great interest. We report a triazatruxene, TAT, molecular semiconductor with chiral alkyl side chains that crystallises from solution to form chirally-stacked columns with a helical pitch of 6 TATs (2.3 nm). These crystals show strong circularly polarised, CP, green photoluminescence, with dissymmetry of 24%. Electronic structure calculations usin…
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Materials with chiral electronic structures are of great interest. We report a triazatruxene, TAT, molecular semiconductor with chiral alkyl side chains that crystallises from solution to form chirally-stacked columns with a helical pitch of 6 TATs (2.3 nm). These crystals show strong circularly polarised, CP, green photoluminescence, with dissymmetry of 24%. Electronic structure calculations using the full crystal structure, show that this chiral stacking associates angular momentum to the valence and conduction states and thus gives rise to the observed CP luminescence. Free-standing crystals are not useful for active semiconductor devices, but we have discovered that co-sublimation of TAT as the guest in a structurally mismatched host enables the fabrication of thin films where the chiral crystallization is achieved in-situ by thermally-triggered nano-phase segregation of dopant and host whilst preserving the integrity of the film. This enables fabrication of bright (green) organic light-emitting diodes with unexpectedly high external quantum efficiencies of up to 16% and electroluminescence dissymmetries above 10%. These materials and this process method offer significant application potential in spintronics, optical displays and multidimensional optoelectronics.
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Submitted 25 August, 2024;
originally announced August 2024.
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Charge transport modulation by a redox supramolecular spin-filtering chiral crystal
Authors:
Michael Verhage,
Pantelis Bampoulis,
Marco D. Preuss,
Ivo Filot,
Heiner Friedrich,
Rick R. M. Joosten,
E. W. Meijer,
Kees Flipse
Abstract:
The chirality induced spin selectivity (CISS) effect is a fascinating phenomena correlating molecular structure with electron spin-polarisation in excited state measurements. Experimental procedures to quantify the spin-filtering magnitude relies generally on averaging data sets, especially those from magnetic field dependent conductive-AFM. We investigate the underlying observed disorder in the I…
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The chirality induced spin selectivity (CISS) effect is a fascinating phenomena correlating molecular structure with electron spin-polarisation in excited state measurements. Experimental procedures to quantify the spin-filtering magnitude relies generally on averaging data sets, especially those from magnetic field dependent conductive-AFM. We investigate the underlying observed disorder in the IV spectra and the origin of spikes superimposed. We demonstrate and explain that a dynamic, voltage sweep rate dependent, phenomena can give rise to complex IV curves for chiral crystals of coronene bisimide. The redox group, able to capture localized charge states, acts as an impurity state interfering with a continuum, giving rise to Fano resonances. We introduce a novel mechanism for the dynamic transport which might also provide insight into the role of spin-polarization. Crucially, interference between charge localisation and delocalisation during transport may be important properties into understanding the CISS phenomena.
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Submitted 9 April, 2023;
originally announced April 2023.
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Dislocation density transients and saturation in irradiated zirconium
Authors:
Andrew R. Warwick,
Rhys Thomas,
Max Boleininger,
Ömer Koç,
Gyula Zilahi,
Gabor Ribárik,
Zoltan Hegedues,
Ulrich Lienert,
Tamas Ungar,
Chris Race,
Michael Preuss,
Philipp Frankel,
Sergei L. Dudarev
Abstract:
Zirconium alloys are widely used as the fuel cladding material in pressurised water reactors, accumulating a significant population of defects and dislocations from exposure to neutrons. We present and interpret synchrotron microbeam X-ray diffraction measurements of proton-irradiated Zircaloy-4, where we identify a transient peak and the subsequent saturation of dislocation density as a function…
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Zirconium alloys are widely used as the fuel cladding material in pressurised water reactors, accumulating a significant population of defects and dislocations from exposure to neutrons. We present and interpret synchrotron microbeam X-ray diffraction measurements of proton-irradiated Zircaloy-4, where we identify a transient peak and the subsequent saturation of dislocation density as a function of exposure. This is explained by direct atomistic simulations showing that the observed variation of dislocation density as a function of dose is a natural result of the evolution of the dense defect and dislocation microstructure driven by the concurrent generation of defects and their subsequent stress-driven relaxation. In the dynamic equilibrium state of the material developing in the high dose limit, the defect content distribution of the population of dislocation loops, coexisting with the dislocation network, follows a power law with exponent $α\approx 2.2$. This corresponds to the power law exponent of $β\approx 3.4$ for the distribution of loops as a function of their diameter that compares favourably with the experimentally measured values of $β$ in the range $ 3 \leq β\leq 4$.
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Submitted 6 April, 2023;
originally announced April 2023.
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The Interaction of Galling and Oxidation in 316L Stainless Steel
Authors:
Samuel R. Rogers,
David Bowden,
Rahul Unnikrishnan,
Fabio Scenini,
Michael Preuss,
David Stewart,
Daniele Dini,
David Dye
Abstract:
The galling behaviour of 316L stainless steel was investigated in both the unoxidised and oxidised states, after exposure in simulated PWR water for 850 hours. Galling testing was performed according to ASTM G196 in ambient conditions. 316L was found to gall by the wedge growth and flow mechanism in both conditions. This resulted in folds ahead of the prow and adhesive junction, forming a heavily…
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The galling behaviour of 316L stainless steel was investigated in both the unoxidised and oxidised states, after exposure in simulated PWR water for 850 hours. Galling testing was performed according to ASTM G196 in ambient conditions. 316L was found to gall by the wedge growth and flow mechanism in both conditions. This resulted in folds ahead of the prow and adhesive junction, forming a heavily sheared multilayered prow. The galling trough was seen to have failed through successive shear failure during wedge flow. Immediately beneath the surface a highly sheared nanocrystalline layer was seen, termed the tribologically affected zone (TAZ). It was observed that strain-induced martensite formed within the TAZ. Galling damage was quantified using Rt (maximum height - maximum depth) and galling area (the proportion of the sample which is considered galled), and it was shown that both damage measures decreased significantly on the oxidised samples. At an applied normal stress of 4.2 MPa the galled area was 14 % vs. 1.2 % and the Rt was 780 um vs. 26 um for the unoxidised and oxidised sample respectively. This trend was present at higher applied normal stresses, although less prominent. This difference in galling behaviour is likely to be a result of a reduction in adhesion in the case of the oxidised surface.
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Submitted 11 December, 2019;
originally announced December 2019.
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From solid solution to cluster formation of Fe and Cr in $α$-Zr
Authors:
P. A. Burr,
M. R. Wenman,
B. Gault,
M. P. Moody,
M. Ivermark,
M. J. D. Rushton,
M. Preuss,
L. Edwards,
R. W. Grimes
Abstract:
To understand the mechanisms by which Fe and Cr additions increase the corrosion rate of irradiated Zr alloys, a combination of experimental (atom probe tomography, x-ray diffraction and thermoelectric power measurements) and modelling (density functional theory) techniques are employed to investigate the non-equilibrium solubility and clustering of Fe and Cr in binary Zr alloys. Cr occupies both…
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To understand the mechanisms by which Fe and Cr additions increase the corrosion rate of irradiated Zr alloys, a combination of experimental (atom probe tomography, x-ray diffraction and thermoelectric power measurements) and modelling (density functional theory) techniques are employed to investigate the non-equilibrium solubility and clustering of Fe and Cr in binary Zr alloys. Cr occupies both interstitial and substitutional sites in the α-Zr lattice, Fe favours interstitial sites, and a low-symmetry site that was not previously modelled is found to be the most favourable for Fe. Lattice expansion as a function of alloying concentration (in the dilute regime) is strongly anisotropic for Fe additions, expanding the $c$-axis while contracting the $a$-axis. Defect clusters are observed at higher solution concentrations, which induce a smaller amount of lattice strain compared to the dilute defects. In the presence of a Zr vacancy, all two-atom clusters are more soluble than individual point defects and as many as four Fe or three Cr atoms could be accommodated in a single Zr vacancy. The Zr vacancy is critical for the increased solubility of defect clusters, the implications for irradiation induced microstructure changes in Zr alloys are discussed.
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Submitted 10 October, 2015; v1 submitted 27 January, 2015;
originally announced January 2015.
