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Direct measurement of 2DEG states in shallow Si:Sb $δ$-layers
Authors:
Frode S. Strand,
Simon P. Cooil,
Quinn T. Campbell,
John J. Flounders,
Håkon I. Røst,
Anna Cecilie Åsland,
Alv Johan Skarpeid,
Marte P. Stalsberg,
Jinbang Hu,
Johannes Bakkelund,
Victoria Bjelland,
Alexei B. Preobrajenski,
Zheshen Li,
Marco Bianchi,
Jill A. Miwa,
Justin W. Wells
Abstract:
We investigate the electronic structure of high-density layers of Sb dopants in a silicon host, so-called Si:Sb $δ$-layers. We show that, in spite of the known challenges in producing highly confined Sb $δ$-layers, sufficient confinement is created such that the lowest conduction band states ($Γ$ states, studied in depth in other silicon $δ$-layers), become occupied and can be observed using angle…
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We investigate the electronic structure of high-density layers of Sb dopants in a silicon host, so-called Si:Sb $δ$-layers. We show that, in spite of the known challenges in producing highly confined Sb $δ$-layers, sufficient confinement is created such that the lowest conduction band states ($Γ$ states, studied in depth in other silicon $δ$-layers), become occupied and can be observed using angle-resolved photoemission spectroscopy. The electronic structure of the Si:Sb $δ$-layers closely resembles that of Si:P systems, where the observed conduction band is near-parabolic and slightly anisotropic in the $\mathbf{k}_\parallel$ plane. The observed $Γ$ state extends ~ 1 nm in the out-of-plane direction, which is slightly wider than the 1/3 monolayer thick dopant distribution. This is caused by a small segregation of the dopant layer, which is nevertheless minimal when comparing with earlier published attempts. Our results serve to demonstrate that Sb is still a feasible dopant alternative for use in the semiconductor $δ$-layer platform, providing similar electronic functionality to Si:P systems. Additionally, it has the advantages of being less expensive, more controllable, safer to handle, and more compatible with industrial patterning techniques. Si:Sb is therefore a viable platform for emerging quantum device applications.
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Submitted 22 October, 2024;
originally announced October 2024.
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The effect of different In$_2$O$_3$(111) surface terminations on CO$_2$ adsorption
Authors:
Sabrina M. Gericke,
Minttu M. Kauppinen,
Margareta Wagner,
Michele Riva,
Giada Franceschi,
Alvaro Posada-Borbón,
Lisa Rämisch,
Sebastian Pfaff,
Erik Rheinfrank,
Alexander M. Imre,
Alexei B. Preobrajenski,
Stephan Appelfeller,
Sara Blomberg,
Lindsay R. Merte,
Johan Zetterberg,
Ulrike Diebold,
Henrik Grönbeck,
Edvin Lundgren
Abstract:
In$_2$O$_3$-based catalysts have shown high activity and selectivity for CO$_2$ hydrogenation to methanol, however the origin of the high performance of In$_2$O$_3$ is still unclear. To elucidate the initial steps of CO$_2$ hydrogenation over In$_2$O$_3$, we have combined X-ray Photoelectron Spectroscopy (XPS) and Density Functional Theory (DFT) calculations to study the adsorption of CO$_2$ on th…
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In$_2$O$_3$-based catalysts have shown high activity and selectivity for CO$_2$ hydrogenation to methanol, however the origin of the high performance of In$_2$O$_3$ is still unclear. To elucidate the initial steps of CO$_2$ hydrogenation over In$_2$O$_3$, we have combined X-ray Photoelectron Spectroscopy (XPS) and Density Functional Theory (DFT) calculations to study the adsorption of CO$_2$ on the In$_2$O$_3$(111) crystalline surface with different terminations, namely the stoichiometric, the reduced, and the hydroxylated surface, respectively. The combined approach confirms that the reduction of the surface results in the formation of In ad-atoms and that water dissociates on the surface at room temperature. A comparison of the experimental spectra and the computed core-level-shifts (using methanol and formic acid as benchmark molecules) suggests that CO$_2$ adsorbs as a carbonate on all surface terminations. We find that CO$_2$ adsorption is hindered by hydroxyl groups on the hydroxylated surface.
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Submitted 24 August, 2023;
originally announced August 2023.
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Fe Nanoclusters on the Ge(001) Surface Studied by Scanning Tunneling Microscopy, Density Functional Theory Calculations and X-Ray Magnetic Circular Dichroism
Authors:
Olaf Lübben,
Sergey A. Krasnikov,
Alexei B. Preobrajenski,
Barry E. Murphy,
Igor V. Shvets
Abstract:
The growth of Fe nanoclusters on the Ge(001) surface has been studied using lowtemperature scanning tunnelling microscopy (STM) and density functional theory (DFT) calculations. STM results indicate that Fe nucleates on the Ge(001) surface, forming wellordered nanoclusters of uniform size. Depending on the preparation conditions, two types of nanoclusters were observed having either four or sixtee…
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The growth of Fe nanoclusters on the Ge(001) surface has been studied using lowtemperature scanning tunnelling microscopy (STM) and density functional theory (DFT) calculations. STM results indicate that Fe nucleates on the Ge(001) surface, forming wellordered nanoclusters of uniform size. Depending on the preparation conditions, two types of nanoclusters were observed having either four or sixteen Fe atoms within a nanocluster. The results were confirmed by DFT calculations. Annealing the nanoclusters at 420 K leads to the formation of nanorow structures, due to cluster mobility at such temperature. The Fe nanoclusters and nanorow structures formed on the Ge(001) surface show a superparamagnetic behaviour as measured by X-ray magnetic circular dichroism.
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Submitted 24 March, 2016;
originally announced March 2016.
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Quasi-freestanding and single-atom thick layer of hexagonal boron nitride as a substrate for graphene synthesis
Authors:
D. Usachov,
D. Haberer,
A. Grüneis,
H. Sachdev,
A. B. Preobrajenski,
V. K. Adamchuk,
C. Laubschat,
D. V. Vyalikh
Abstract:
We demonstrate that freeing a single-atom thick layer of hexagonal boron nitride (hbn) from tight chemical bonding to a Ni(111) thin film grown on a W(110) substrate can be achieved by intercalation of Au atoms into the interface. This process has been systematically investigated using angle-resolved photoemission spectroscopy, X-ray photoemission and absorption techniques. It has been demonstrate…
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We demonstrate that freeing a single-atom thick layer of hexagonal boron nitride (hbn) from tight chemical bonding to a Ni(111) thin film grown on a W(110) substrate can be achieved by intercalation of Au atoms into the interface. This process has been systematically investigated using angle-resolved photoemission spectroscopy, X-ray photoemission and absorption techniques. It has been demonstrated that the transition of the hbn layer from the "rigid" into the "quasi-freestanding" state is accompanied by a change of its lattice constant. Using chemical vapor deposition, graphene has been successfully synthesized on the insulating, quasi-freestanding hbn monolayer. We anticipate that the in situ synthesized weakly interacting graphene/hbn double layered system could be further developed for technological applications and may provide perspectives for further inquiry into the unusual electronic properties of graphene.
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Submitted 11 August, 2010;
originally announced August 2010.
