Direct and Simultaneous Observation of Ultrafast Electron and Hole Dynamics in Germanium
Authors:
Michael Zürch,
Hung-Tzu Chang,
Lauren J. Borja,
Peter M. Kraus,
Scott K. Cushing,
Andrey Gandman,
Christopher J. Kaplan,
Myoung Hwan Oh,
James S. Prell,
David Prendergast,
Chaitanya D. Pemmaraju,
Daniel M. Neumark,
Stephen R. Leone
Abstract:
Understanding excited carrier dynamics in semiconductors is crucial for the development of photovoltaics and efficient photonic devices. However, overlapping spectral features in optical/NIR pump-probe spectroscopy often render assignments of separate electron and hole carrier dynamics ambiguous. Here, ultrafast electron and hole dynamics in germanium nanocrystalline thin films are directly and si…
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Understanding excited carrier dynamics in semiconductors is crucial for the development of photovoltaics and efficient photonic devices. However, overlapping spectral features in optical/NIR pump-probe spectroscopy often render assignments of separate electron and hole carrier dynamics ambiguous. Here, ultrafast electron and hole dynamics in germanium nanocrystalline thin films are directly and simultaneously observed by attosecond transient absorption spectroscopy (ATAS) in the extreme ultraviolet at the germanium M_{4,5}-edge (~30 eV). We decompose the ATAS spectra into contributions of electronic state blocking and photo-induced band shifts at a carrier density of 8*10^{20}cm^{-3}. Separate electron and hole relaxation times are observed as a function of hot carrier energies. A first order electron and hole decay of ~1 ps suggests a Shockley-Read-Hall recombination mechanism. The simultaneous observation of electrons and holes with ATAS paves the way for investigating few to sub-femtosecond dynamics of both holes and electrons in complex semiconductor materials and across junctions.
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Submitted 9 February, 2017;
originally announced February 2017.
