Showing 1–50 of 70 results for author: Pradhan, K

Combine effect of site dilution and long-range interaction on magnetic and transport properties in the half-filled Hubbard model

Authors: Sudip Mandal, Sourav Chakraborty, Kalpataru Pradhan

Abstract: We investigate the magnetotransport properties of a diluted half-filled one-band Hubbard model with second-nearest-neighbor hopping on a simple cubic lattice, aiming to explore the possibility of metallicity in diluted antiferromagnetic systems. Our semiclassical Monte Carlo calculations reveal an antiferromagnetic metallic regime in diluted correlated materials. This unexpected metallic regime na… ▽ More We investigate the magnetotransport properties of a diluted half-filled one-band Hubbard model with second-nearest-neighbor hopping on a simple cubic lattice, aiming to explore the possibility of metallicity in diluted antiferromagnetic systems. Our semiclassical Monte Carlo calculations reveal an antiferromagnetic metallic regime in diluted correlated materials. This unexpected metallic regime naturally leads to a central question: how does the introduction of dilution into an antiferromagnetic material, especially with long-range magnetic interactions, induce metallicity -- a feature not commonly associated with antiferromagnets? To address this question, we demonstrate that when the on-site repulsive Hubbard interaction strength is set to zero on a percentage of the sites (site dilution), the insulating state weakens due to percolative conduction among the diluted sites at low temperatures. Remarkably, this occurs without any significant alteration to the underlying long-range antiferromagnetic ordering in the system, thereby providing a pathway to realize antiferromagnetic metals. In addition, we show how the sublattice-dependent hopping can be exploited to engineer spin-polarized half-metallic antiferromagnets. Overall, our numerical results collectively provide a basis for understanding the combined effect of site dilution and competing interactions, which will assist in the design of new antiferromagnetic metals for future spintronic applications. △ Less

Submitted 10 July, 2025; v1 submitted 30 June, 2025; originally announced June 2025.

Comments: 16 Pages, 11 Figs

Unusual Valence of Ru and Prediction of Magnetism, Anomalous Hall Conductivity in a Newly Synthesized Double Perovskite Compound Ca_2CoRuO_6

Authors: Koushik Pradhan, Soumya Ghorai, Prabuddha Sanyal, Ryan Morrow, Bernd Büchner, Thirupathaiah Setti, Tanusri Saha Dasgupta

Abstract: With a goal to expand on the family of double perovskite compounds, hosting 3d transition metal and 4d or 5d transition metal, two new ordered double perovskite compounds, Ca$_2$FeRuO$_6$ and Ca$_2$CoRuO$_6$ are synthesized following the prediction of a recent high throughput machine-learning study [Phys. Rev. Materials 3, 084418]. Experimentally both compounds are found to stabilize in monoclinic… ▽ More With a goal to expand on the family of double perovskite compounds, hosting 3d transition metal and 4d or 5d transition metal, two new ordered double perovskite compounds, Ca$_2$FeRuO$_6$ and Ca$_2$CoRuO$_6$ are synthesized following the prediction of a recent high throughput machine-learning study [Phys. Rev. Materials 3, 084418]. Experimentally both compounds are found to stabilize in monoclinic symmetry, which is consistent with the high-throughput prediction for Ca$_2$FeRuO$_6$, but at odd for Ca$_2$CoRuO$_6$. Among the two synthesized compounds, the properties of Ca$_2$CoRuO$_6$, investigated employing the first principles technique and model Hamiltonian calculation, appear promising. The monoclinic structured Ca$_2$CoRuO$_6$ is found to stabilize unusual 6+ valence of Ru, and support a half-metallic ground state with uncompensated net moment. As predicted by our first-principles study, the finite spin-orbit coupling at the Ru site contributes to the non-trivial topology of the band structure of monoclinic Ca$_2$CoRuO$_6$, resulting in a moderately large value of anomalous Hall conductivity. Our theoretical predictions should encourage further experimental investigation of this newly synthesized compound. △ Less

Submitted 12 June, 2025; v1 submitted 11 June, 2025; originally announced June 2025.

Comments: 18 pages, 15 figs

Kilobyte-Scale, Selector-Free, Temperature-Hard AlScN Ferroelectric Diode Crossbar Arrays

Authors: Zirun Han, Chao-Chuan Chen, Dhiren K. Pradhan, David C. Moore, Ravali Gudavalli, Xindi Yang, Kwan-Ho Kim, Hyunmin Cho, Zachary Anderson, Spencer Ware, Harsh Yellai, W. Joshua Kennedy, Nicholas R. Glavin, Roy H. Olsson III, Deep Jariwala

Abstract: We report the fabrication and characterization of kilobyte-scale, selector-free, ferroelectric (FE) diode crossbar memory arrays based on aluminum scandium nitride (AlScN). Utilizing a fully CMOS back-end-of-line (BEOL) compatible process, we fabricated 2-kilobyte (128 $\times$ 128) arrays with device diameters down to 5 $μ$m, achieving memory densities up to 2500 bits/mm$^2$. Large-scale electric… ▽ More We report the fabrication and characterization of kilobyte-scale, selector-free, ferroelectric (FE) diode crossbar memory arrays based on aluminum scandium nitride (AlScN). Utilizing a fully CMOS back-end-of-line (BEOL) compatible process, we fabricated 2-kilobyte (128 $\times$ 128) arrays with device diameters down to 5 $μ$m, achieving memory densities up to 2500 bits/mm$^2$. Large-scale electrical characterization across 1000 randomly selected devices reveals a yield rate of 95.2%, a tight switching voltage distribution with a coefficient of variation (CV) of 0.003, and consistent on/off ratios of around 10 with a CV of 0.27. We demonstrate selector-free read and program operations of the array, enabled by the high nonlinearity, rectification, and uniform switching behavior of the FE diodes. Furthermore, we verified consistent ferroelectric switching during array operation at temperatures up to 600 $^\circ$C. Our results highlight the potential of AlScN FE diode arrays for energy-efficient, high-density memory applications and lay the groundwork for future integration in compute-near-memory, high-temperature memory, and analog compute-in-memory systems. △ Less

Submitted 5 June, 2025; originally announced June 2025.

Leakage Suppression Across Temperature in Al1-xScxN Thin Film Ferroelectric Capacitors through Boron Incorporation

Authors: Pedram Yousefian, Xiaolei Tong, Jonathan Tan, Dhiren K. Pradhan, Deep Jariwala, Roy H. Olsson III

Abstract: This paper presents high-temperature ferroelectric characterization of 40~nm Al$_{1-x-y}$B$_x$Sc$_y$N (AlBScN) thin film capacitors grown by co-sputtering Al$_{0.89}$B$_{0.11}$ and Sc targets onto Pt(111)/Ti(002)/Si(100) substrates. Structural analysis confirmed a c-axis-oriented wurtzite structure with a low surface roughness of 1.37~nm. Ferroelectric switching, characterized by positive-up-negat… ▽ More This paper presents high-temperature ferroelectric characterization of 40~nm Al$_{1-x-y}$B$_x$Sc$_y$N (AlBScN) thin film capacitors grown by co-sputtering Al$_{0.89}$B$_{0.11}$ and Sc targets onto Pt(111)/Ti(002)/Si(100) substrates. Structural analysis confirmed a c-axis-oriented wurtzite structure with a low surface roughness of 1.37~nm. Ferroelectric switching, characterized by positive-up-negative-down (PUND) measurements up to 600~$^\circ$C, exhibited a linear decrease in coercive fields from 6.2~MV/cm at room temperature to 4.2~MV/cm at 600~$^\circ$C, while remanent polarization remained stable with temperature. Direct current I-V measurements highlight a significant suppression of leakage currents, over two orders of magnitude lower compared to AlScN capacitors fabricated under similar conditions. These results position AlBScN thin films as strong candidates for ferroelectric applications in extreme environments. △ Less

Submitted 2 May, 2025; originally announced May 2025.

Multi Moire Networks in Engineered Lateral Hetero-Bilayers: Programmable Phononic Reconfiguration and Second Harmonic Generation

Authors: Suman Kumar Chakraborty, Frederico B. Sousa, Chakradhar Sahoo, Indrajeet Dhananjay Prasad, Shneha Biswas, Purbasha Ray, Biswajeet Nayak, Rafael Rojas, Baisali Kundu, Alfred J. H. Jones, Jill A. Miwa, Søren Ulstrup, Sudipta Dutta, Santosh Kumar, Leandro M. Malard, Gopal K. Pradhan, Prasana Kumar Sahoo

Abstract: Moire engineering in two-dimensional transition metal dichalcogenides enables access to correlated quantum phenomena. Realizing such effects demands simultaneous control over twist angle and material composition to modulate phonons, excitons, and their interactions. However, most studies rely on exfoliated flakes, limiting scalability and systematic exploration. Here, we demonstrate a scalable mul… ▽ More Moire engineering in two-dimensional transition metal dichalcogenides enables access to correlated quantum phenomena. Realizing such effects demands simultaneous control over twist angle and material composition to modulate phonons, excitons, and their interactions. However, most studies rely on exfoliated flakes, limiting scalability and systematic exploration. Here, we demonstrate a scalable multi-moire network by vertically stacking CVD-grown monolayer lateral heterostructures. Signatures of moire non-rigidity, including phonon frequency softening, linewidth broadening, and strain localization, are attributed to two lattice relaxation modes; rotational reconstruction and volumetric dilation. Micro-angle-resolved photoemission spectroscopy reveals that interfacial orbital interactions modulate interlayer coupling. At aligned angles, molybdenum diselenides exhibit reduced valley polarization and Davydov splitting, indicating strain-induced symmetry breaking and chiral phonon effects. Notably, SHG modulation was obderved with variation in twist angle due to lower coherence and band-offset-driven phase delay. First-principles calculations support these findings. This work provides a route to programmable, scalable multi-moire platforms for opto-straintronics, quantum sensing, and on-chip photonics. △ Less

Submitted 2 May, 2025; originally announced May 2025.

Exploring the magnetic states in the one-band Hubbard model: Impact of long-range hoppings

Authors: Sudip Mandal, Sandip Halder, Kalpataru Pradhan

Abstract: Correlated electron systems with competing interactions provide a valuable platform for examining exotic magnetic phases. Theoretical models often focus on nearest-neighbor interactions, although long-range interactions can have a considerable impact on the behavior of the system, creating distinct and complicated magnetic phases. We investigate the consequences of competing interactions in a half… ▽ More Correlated electron systems with competing interactions provide a valuable platform for examining exotic magnetic phases. Theoretical models often focus on nearest-neighbor interactions, although long-range interactions can have a considerable impact on the behavior of the system, creating distinct and complicated magnetic phases. We investigate the consequences of competing interactions in a half-filled one-band Hubbard model on a simple cubic lattice, incorporating hopping processes up to third-nearest-neighbors, to explore the underlying magnetotransport properties. Our magnetic phase diagrams at low temperatures, obtained using semi-classical Monte Carlo analysis, reveal that the long-range interactions can disrupt one form of magnetic phase while creating a new type of magnetic order. For the nonperturbative regime (on-site Hubbard repulsive strength $U \sim$ bandwidth) the C-type antiferromagnetic ground state is preferred over the G-type antiferromagnetic phase when the interaction between second-nearest neighbor sites becomes significant to the nearest-neighbor interactions. However, interactions beyond the second-nearest-neighbors are required to stabilize the A-type antiferromagnetic ground state. Remarkably, at low temperatures, a highly correlated paramagnetic insulating phase develops at the intersection between the antiferromagnetic phases, which might promote a three-dimensional spin-liquid state. △ Less

Submitted 27 March, 2025; originally announced March 2025.

Comments: 16 Pages, 12 Figures

Observation of giant remnant polarization in ultrathin AlScN at cryogenic temperatures

Authors: Seunguk Song, Dhiren K. Pradhan, Zekun Hu, Yinuo Zhang, Rachael N. Keneipp, Michael A. Susner, Pijush Bhattacharya, Marija Drndić, Roy H. Olsson III, Deep Jariwala

Abstract: The discovery of wurtzite ferroelectrics opens new frontiers in polar materials, yet their behavior at cryogenic temperatures remains unexplored. Here, we reveal unprecedented ferroelectric properties in ultrathin (10 nm) Al$_{0.68}$Sc$_{0.32}$N (AlScN) at cryogenic temperatures where the properties are fundamentally distinct from those of conventional oxide ferroelectrics. At 12 K, we demonstrate… ▽ More The discovery of wurtzite ferroelectrics opens new frontiers in polar materials, yet their behavior at cryogenic temperatures remains unexplored. Here, we reveal unprecedented ferroelectric properties in ultrathin (10 nm) Al$_{0.68}$Sc$_{0.32}$N (AlScN) at cryogenic temperatures where the properties are fundamentally distinct from those of conventional oxide ferroelectrics. At 12 K, we demonstrate a giant remnant polarization exceeding 250 $μ$C/cm$^2$ -- more than twice that of any known ferroelectric -- driven by an enhanced c/a ratio in the wurtzite structure. Our devices sustain remarkably high electric fields (~13 MV/cm) while maintaining reliable switching, achieving over 104 polarization reversal cycles at 12 K. Critically, this breakdown field strength approaches that of passive dielectric materials while maintaining ferroelectric functionality. The extraordinary polarization enhancement and high-field stability at cryogenic temperatures contrasts sharply with oxide ferroelectrics, establishing wurtzite ferroelectrics as a distinct class of polar materials with implications spanning fundamental physics to cryogenic non-volatile memory and quantum technologies. △ Less

Submitted 25 March, 2025; originally announced March 2025.

Comments: 27 pages, 5 figures, 5 supplementary figures

Revisiting MnSe : a Magnetic Semiconductor with Spin-Phonon coupling

Authors: Suman Kalyan Pradhan, Arnab Bera, Soham Das, Yongli Yu, Jicheng Wang, Rui Wu

Abstract: Spin-phonon interactions in 2D magnetic materials are crucial in advancing next-generation spintronic devices. Therefore, identifying new materials with significant spin-phonon interactions is of great importance. In this context, MnSe, previously recognized as an exemplary non-layered p-type semiconductor emerges in this study as an intriguing material with notable spin-phonon characteristics. Th… ▽ More Spin-phonon interactions in 2D magnetic materials are crucial in advancing next-generation spintronic devices. Therefore, identifying new materials with significant spin-phonon interactions is of great importance. In this context, MnSe, previously recognized as an exemplary non-layered p-type semiconductor emerges in this study as an intriguing material with notable spin-phonon characteristics. The complex magnetism in pristine MnSe, primarily dominated by antiferromagnetism with a weak ferromagnetic component, gives rise to both spontaneous and conventional exchange bias effects at low temperatures. In an effort to understand this intriguing magnetism, we conducted a detailed Raman spectroscopy study, which reveals unconventional deviations from the usual phonon anharmonicity around Neel temperature (170 K), in the self-energies of the P1, P2, and P3 modes. Notably, the P1 mode is most sensitive to spin-phonon coupling, while the P2 mode is particularly responsive to the structural phase transition at 250 K. Therefore, these findings provide comprehensive insights into the phase transitions of pristine MnSe, particularly highlighting the previously unobserved interplay between its magnetic behavior and phonon dynamics. △ Less

Submitted 25 February, 2025; originally announced February 2025.

Critical scaling behavior in skyrmion host ferromagnet CrTe1.38

Authors: Suman Kalyan Pradhan, Tuhin Debnath, Rui Wu

Abstract: Materials hosting diverse topological spin textures hold significant potential for spintronic applications. In this context, CrTe1.38, a quasi-two-dimensional material, stands out due to its stable N'eel-type skyrmion phase over a wide temperature range, both with and without an applied magnetic field [APL 125, 152402 (2024)]. Thus, it is a promising candidate for investigating complex magnetic ph… ▽ More Materials hosting diverse topological spin textures hold significant potential for spintronic applications. In this context, CrTe1.38, a quasi-two-dimensional material, stands out due to its stable N'eel-type skyrmion phase over a wide temperature range, both with and without an applied magnetic field [APL 125, 152402 (2024)]. Thus, it is a promising candidate for investigating complex magnetic phenomena, offering valuable insights into the underlying magnetic interactions. This study investigates the critical behavior of CrTe1.38 near TC by measuring DC magnetic isotherms. A systematic analysis of these isotherms with the magnetic field applied along the easy axis allows us to determine the asymptotic critical exponents: beta = 0.314, gamma = 1.069, and delta = 4.556, where the Widom scaling law and scaling equations are verified the self-consistency and reliability. In this system, the magnetic exchange coupling J(r) is the long-range type and decays spatially at a rate slower than approximately 4.651. Most notably, a series of vertical lines in the low-field region of the initial magnetization curves below TC supports the existence of a skyrmion phase in this compound △ Less

Submitted 25 February, 2025; originally announced February 2025.

Colossal magnetoresistance in a quasi-two-dimensional cluster glass semiconductor

Authors: Suman Kalyan Pradhan, Weiqi Liu, Jicheng Wang, Yongli Yu, Wenxing Chen, Jinbo Yang, Yanglong Hou, Rui Wu

Abstract: With a surge of interest in spintronics, the manipulation and detection of colossal magnetoresistance in quasi-two-dimensional layered magnetic materials have become a key focus, driven by their relatively scarce occurrence compared to giant magnetoresistance and tunneling magnetoresistance. This study presents an investigation into the desired colossal magnetoresistance, achieved by introducing m… ▽ More With a surge of interest in spintronics, the manipulation and detection of colossal magnetoresistance in quasi-two-dimensional layered magnetic materials have become a key focus, driven by their relatively scarce occurrence compared to giant magnetoresistance and tunneling magnetoresistance. This study presents an investigation into the desired colossal magnetoresistance, achieved by introducing magnetic frustration through Te doping in quasi-two-dimensional antiferromagnet Cr2Se3 matrix. The resulting Cr0.98SeTe0.27 exhibits cluster glass-like behavior with a freezing temperature of 28 K. Magnetotransport studies reveal a significant negative magnetoresistance of up to 32%. Additionally, angle-dependent transport measurements demonstrate a magnetic field-induced transition from positive to negative resistance anisotropy, suggesting a magnetic field-driven alteration in the electronic structure of this narrow band gap semiconductor, a characteristic feature of the colossal magnetoresistance effect. This behavior is further corroborated by density functional theory calculations. This systematic investigation provides a crucial understanding of the control of colossal magnetoresistance in quasi-two-dimensional materials via competing exchange interactions. △ Less

Submitted 25 February, 2025; originally announced February 2025.

Microscopic study of interlayer magnetic coupling across the interface in antiferromagnetic bilayers

Authors: Sandip Halder, Sudip Mandal, Kalpataru Pradhan

Abstract: The enhancement of Neel temperature ($T_N$) of low-$T_{N}$ antiferromagnets in antiferromagnetic bilayers AF1/AF2, where the $T_N$ of AF1 is larger than AF2 (for example enhancement of $T_{N}$ of CoO in CoO/NiO or FeO in FeO/CoO), is a subject of considerable interest. One essential question needs to be answered in these bilayers: is the interfacial coupling a short-range one or long-range that me… ▽ More The enhancement of Neel temperature ($T_N$) of low-$T_{N}$ antiferromagnets in antiferromagnetic bilayers AF1/AF2, where the $T_N$ of AF1 is larger than AF2 (for example enhancement of $T_{N}$ of CoO in CoO/NiO or FeO in FeO/CoO), is a subject of considerable interest. One essential question needs to be answered in these bilayers: is the interfacial coupling a short-range one or long-range that mediates the effect of the AF1 layers on the magnetic properties of AF2 layer? To understand the systematics of the magnetic coupling across the interface, we investigate the plane-resolved magnetotransport properties of antiferromagnetic bilayers using an electron-hole symmetric one-band Hubbard model at half-filling, employing a semi-classical Monte Carlo method. In our model Hamiltonian calculations, we set Coulomb repulsion $U_{1} = 8$ to mimic high-$T_{N}$ AF1 layer, whereas we use $U_{2}$ = $2\times U_{1}$ to mimic the low-$T_{N}$ AF2 layer. Our calculations show that the $T_{N}$ of the low-$T_{N}$ antiferromagnet enhances substantially when it's thickness is small, similar to experiments, giving rise to single magnetic transition temperature of the bilayer system. These findings are well supported by a single peak in temperature-dependent specific heat. However, for larger thicknesses, the $T_{N}$ of the low-$T_{N}$ antiferromagnet approaches towards its bulk value and constituent antiferromagnetic layers align antiferromagnetically at two separate temperatures and two maxima are observed in specific heat data. Our calculations also show that the delocalization of moments is more or less confined near the interface indicating the short-ranged nature of the proximity effect. Our obtained results are consistent with the experimental observations. A detailed discussion of the modifications that will occur if we use $U_{1} = 8$ and $U_{2}$ = $0.5\times U_{1}$ will also be addressed. △ Less

Submitted 19 December, 2024; originally announced December 2024.

Comments: 15 pages

Evidence of spin reorientation transition below 150 K from magnetic force microscopy in a ferromagnetic BiFeO$_3$ thin film

Authors: Sudipta Goswami, Shubhankar Mishra, Kishor Kumar Sahoo, Kumar Brajesh, Mihir Ranjan Sahoo, Subhashree Chatterjee, Devajyoti Mukherjee, Kalpataru Pradhan, Ashish Garg, Chandan Kumar Ghosh, Dipten Bhattacharya

Abstract: We investigated the magnetic transitions in BiFeO$_3$ at low temperature (5-300 K) and observed nearly 90$^o$ rotation of magnetic domains (imaged by vertical magnetic force microscopy) across 150 K in an epitaxial thin film of thickness $\sim$36 nm. It offers a clear evidence of spin reorientation transition. It also corroborates the transition observed below $\sim$150 K in the zero-field-cooled… ▽ More We investigated the magnetic transitions in BiFeO$_3$ at low temperature (5-300 K) and observed nearly 90$^o$ rotation of magnetic domains (imaged by vertical magnetic force microscopy) across 150 K in an epitaxial thin film of thickness $\sim$36 nm. It offers a clear evidence of spin reorientation transition. It also corroborates the transition observed below $\sim$150 K in the zero-field-cooled and field-cooled magnetization versus temperature data. The field-driven 180$^o$ domain switching at room temperature, on the other hand, signifies presence of ferromagnetism. Since bulk antiferromagnetic BiFeO$_3$ does not exhibit such a transition, this observation in ferromagnetic thin film of BiFeO$_3$ indicates a radical effect because of epitaxial strain. Density functional theory based first-principles calculations too reveal that combined in- and out-of-plane epitaxial strain induces magnetic transition from G- to C-type structure in BiFeO$_3$. △ Less

Submitted 4 December, 2024; originally announced December 2024.

Comments: 12 pages, 9 figures, published in Phys. Rev. B

Journal ref: Phys. Rev. B 110, 214401 (2024)

Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 °C

Authors: Yunfei He, David C. Moore, Yubo Wang, Spencer Ware, Sizhe Ma, Dhiren K. Pradhan, Zekun Hu, Xingyu Du, W. Joshua Kennedy, Nicholas R. Glavin, Roy H. Olsson III, Deep Jariwala

Abstract: Ferroelectric (Fe) materials-based devices show great promise for non-volatile memory applications, yet few demonstrate reliable operation at elevated temperatures. In this work, we demonstrate Ni/Al0.68Sc0.32N/4H-SiC metal-ferroelectric-semiconductor capacitors for high-temperature non-volatile memory applications. Our 30-nm thick ferroelectric Al0.68Sc0.32N film grown on SiC exhibits stable and… ▽ More Ferroelectric (Fe) materials-based devices show great promise for non-volatile memory applications, yet few demonstrate reliable operation at elevated temperatures. In this work, we demonstrate Ni/Al0.68Sc0.32N/4H-SiC metal-ferroelectric-semiconductor capacitors for high-temperature non-volatile memory applications. Our 30-nm thick ferroelectric Al0.68Sc0.32N film grown on SiC exhibits stable and robust ferroelectric switching up to 1000°C. The coercive field decreases linearly from -6.4/+11.9 MV cm-1 at room temperature to -3.1/+7.8 MV cm-1 at 800°C, further reducing to -2.5 MV cm-1 at 1000°C. At 600°C, the devices achieve remarkable reliability with ~2000 endurance cycles and over at least 100 hours of retention with negligible polarization loss. At 800°C, the devices retain data for at least 10,000 seconds and exceed 400 write cycles. Our results further highlight the potential for ferroelectric AlScN thin-films particularly when paired with SiC semiconductor substrates for high-temperature non-volatile memory. △ Less

Submitted 19 March, 2025; v1 submitted 25 November, 2024; originally announced November 2024.

Glucose Sensing Using Pristine and Co-doped Hematite Fiber-Optic sensors: Experimental and DFT Analysis

Authors: Namrata Pattanayak, Preeti Das, Mihir Ranjan Sahoo, Padmalochan Panda, Monalisa Pradhan, Kalpataru Pradhan, Reshma Nayak, Sumanta Kumar Patnaik, Sukanta Kumar Tripathy

Abstract: Glucose monitoring plays a critical role in managing diabetes, one of the most prevalent diseases globally. The development of fast-responsive, cost-effective, and biocompatible glucose sensors is essential for improving patient care. In this study, a comparative analysis is conducted between pristine and Co-doped hematite samples, synthesized via the hydrothermal method, to evaluate their structu… ▽ More Glucose monitoring plays a critical role in managing diabetes, one of the most prevalent diseases globally. The development of fast-responsive, cost-effective, and biocompatible glucose sensors is essential for improving patient care. In this study, a comparative analysis is conducted between pristine and Co-doped hematite samples, synthesized via the hydrothermal method, to evaluate their structural, morphological, and optical properties. The glucose sensing performance of both samples is assessed using a fiber-optic evanescent wave (FOEW) setup. While the sensitivity remains comparable for both pristine and Co-doped hematite, a reduction in the Limit of Detection (LoD) is observed in the Co-doped sample, suggesting enhanced interactions with glucose molecules at the surface. To gain further insights into the glucose adsorption mechanisms, Density Functional Theory (DFT) calculations are performed, revealing key details regarding charge transfer, electronic delocalization, and glucose binding on the hematite surfaces. These findings highlight the potential of Co-doped hematite for advanced glucose sensing applications, offering a valuable synergy between experimental and theoretical approaches for further exploration in biosensing technologies. △ Less

Submitted 9 November, 2024; originally announced November 2024.

Journal ref: Langmuir 2025, 41, 8866-8875

Emergent scalar-chirality \& colossal transverse-magnetoresponse in strongly correlated nodal-line half-metal

Authors: Jyotirmoy Sau, Sourav Chakraborty, Sourabh Saha, Kalpataru Pradhan, Anamitra Mukherjee, Manoranjan Kumar

Abstract: Understanding the interplay of strong correlation and temperature in nodal-line semimetals can offer novel ways to control spin currents. Here we consider the 3d-5d double-perovskite Ba$_{2}$CoWO$_{6}$, which features mirror-symmetry-protected nodal-lines, strong Co-site interactions, and spin-orbit coupling (SOC) at W sites. Our first principles and exact diagonalization results reveal a half-met… ▽ More Understanding the interplay of strong correlation and temperature in nodal-line semimetals can offer novel ways to control spin currents. Here we consider the 3d-5d double-perovskite Ba$_{2}$CoWO$_{6}$, which features mirror-symmetry-protected nodal-lines, strong Co-site interactions, and spin-orbit coupling (SOC) at W sites. Our first principles and exact diagonalization results reveal a half-metallic ground state with high-spin Co and topologically non-trivial bands. We demonstrate that SOC gaps out nodal points, causes band-inversion and generates anomalous Hall response. A semi-classical Monte Carlo finite-temperature simulation of five-orbital Hubbard model uncovers an emergent Co-spin scalar chirality and colossal positive transverse-magnetoresponse. We predict the temperature and magnetic field scales for the tunability of scalar-chirality and magnetoresponse. △ Less

Submitted 28 August, 2024; originally announced August 2024.

Layer Resolved Magnetotransport Properties in Antiferromagnetic/Paramagnetic Superlattices

Authors: Sandip Halder, Sourav Chakraborty, Kalpataru Pradhan

Abstract: We investigate the layer resolved magnetotransport properties of the antiferromagnetic/paramagnetic superlattices based on one band half-filled Hubbard model in three dimensions. In our set up the correlated layers (with on-site repulsion strength $U \ne$ 0) are intercalated between the uncorrelated (U = 0) layers. Our calculations based on the semi-classical Monte-Carlo technique show that the ma… ▽ More We investigate the layer resolved magnetotransport properties of the antiferromagnetic/paramagnetic superlattices based on one band half-filled Hubbard model in three dimensions. In our set up the correlated layers (with on-site repulsion strength $U \ne$ 0) are intercalated between the uncorrelated (U = 0) layers. Our calculations based on the semi-classical Monte-Carlo technique show that the magnetic moments are induced in the uncorrelated layers at low temperatures due to kinetic hopping of the carriers across the interface. The average induced magnetic moment in the uncorrelated layer varies nonmonotonically with the $U$ values of the correlated layer. Interestingly, the induced magnetic moments are antiferromagnetically arranged in uncorrelated layers and mediates the antiferromagnetic ordering between correlated layers. As a result the whole SL system turns out to be antiferromagnetic insulating at low temperatures. For $U \sim$ bandwidth the local moments in the correlated planes increases as a function of the distance from the interface. Expectedly our in-plane resistivity calculations show that the metal insulator transition temperature of the central plane is larger than the edge planes in the correlated layers. On the other hand, although the induced moments in uncorrelated planes decreases considerably as move from edge planes to center planes the metal insulator transition temperature remains more or less same for all planes. The induced moments in uncorrelated layers gradually dissipates with increasing the thickness of uncorrelated layer and as a result the long range antiferromagnetic ordering vanishes in the superlattices similar to the experiments. △ Less

Submitted 10 July, 2024; originally announced July 2024.

Comments: 12 Figs

Magnetotransport Properties of Ferromagnetic/Antiferromagnetic Superlattices: Probing the role of induced magnetization in antiferromagnetic layer

Authors: Sandip Halder, Snehal Mandal, Kalpataru Pradhan

Abstract: We investigate the magnetic and transport properties of the $La_{1-x}Sr_{x}MnO_{3}$ (LSMO)/$Pr_{1-x}Ca_{x}MnO_{3}$ (PCMO) like ferromagnetic/antiferromagnetic superlattices in three dimensions using a two orbitals double exchange model incorporating the Jahn-Teller lattice distortions, superexchange interactions and long-range Coulomb interactions. In our simulations we primarily focus on periodic… ▽ More We investigate the magnetic and transport properties of the $La_{1-x}Sr_{x}MnO_{3}$ (LSMO)/$Pr_{1-x}Ca_{x}MnO_{3}$ (PCMO) like ferromagnetic/antiferromagnetic superlattices in three dimensions using a two orbitals double exchange model incorporating the Jahn-Teller lattice distortions, superexchange interactions and long-range Coulomb interactions. In our simulations we primarily focus on periodic arrangement of $w_L$ planes of ferromagnetic LSMO and $w_P$ planes of antiferromagnetic PCMO manganites, and set $w_L$+$w_P$ = 10. The induced ferromagnetic correlations in the parent PCMO layer decreases monotonically with increasing the PCMO layer width $w_P$ at high temperatures for both half-doping ($n =0.5$) and off-half-doping ($n = 0.55$) scenarios. As we decrease the temperature further the induced ferromagnetic moments in PCMO layer disappears or decreases considerably at half-doping due to the onset of charge ordering in antiferromagnetic PCMO layers. Overall, the magnetization in PCMO layer decreases at low temperatures and the metal-insulator transition temperature of the LSMO/PCMO superlattices increases with increase of the PCMO layer width $w_P$, similar to the experiments. On the other hand, at off-half-doping, the induced ferromagnetic moment survives even at low temperatures due to weakened charge ordering in PCMO layer and interestingly, varies nonmonotonically with PCMO layer width, in agreement with experiments. The nonmonotonic trend of the conductivity of the superlattice with increase of the PCMO layer width $w_P$ shows an one-to-one correspondence between conductivity of the superlattice and the induced ferromagnetic moments in the PCMO layer. We highlight the key role of induced ferromagnetic moment in PCMO layer in analyzing the magnetotransport properties of the LSMO/PCMO superlattices. △ Less

Submitted 31 May, 2024; originally announced May 2024.

Comments: 9 Figs

Materials for High Temperature Digital Electronics

Authors: Dhiren K. Pradhan, David C. Moore, A. Matt Francis, Jacob Kupernik, W. Joshua Kennedy, Nicholas R. Glavin, Roy H. Olsson III, Deep Jariwala

Abstract: Silicon microelectronics, consisting of complementary metal oxide semiconductor (CMOS) technology, have changed nearly all aspects of human life from communication to transportation, entertainment, and healthcare. Despite the widespread and mainstream use, current silicon-based devices suffer significant reliability issues at temperatures exceeding 125 C. The emergent technological frontiers of sp… ▽ More Silicon microelectronics, consisting of complementary metal oxide semiconductor (CMOS) technology, have changed nearly all aspects of human life from communication to transportation, entertainment, and healthcare. Despite the widespread and mainstream use, current silicon-based devices suffer significant reliability issues at temperatures exceeding 125 C. The emergent technological frontiers of space exploration, geothermal energy harvesting, nuclear energy, unmanned avionic systems, and autonomous driving will rely on control systems, sensors, and communication devices which operate at temperatures as high as 500 C and beyond. At these extreme temperatures, active (heat exchanger, phase change cooling) or passive (fins and thermal interface materials) cooling strategies add significant mass and complication which is often infeasible. Thus, new material solutions beyond conventional silicon CMOS devices are necessary for high temperature, resilient electronic systems. Accomplishing this will require a united effort to explore development, integration, and ultimately manufacturing of non-silicon-based logic and memory technologies, non-traditional metals for interconnects, and ceramic packaging technology. △ Less

Submitted 21 August, 2024; v1 submitted 4 April, 2024; originally announced April 2024.

Comments: 6 Figures

Multi-State, Ultra-thin, BEOL-Compatible AlScN Ferroelectric Diodes

Authors: Kwan-Ho Kim, Zirun Han, Yinuo Zhang, Pariasadat Musavigharavi, Jeffrey Zheng, Dhiren K. Pradhan, Eric A. Stach, Roy H. Olsson III, Deep Jariwala

Abstract: The growth in data generation necessitates efficient data processing technologies to address the von Neumann bottleneck in conventional computer architecture. Memory-driven computing, which integrates non-volatile memory (NVM) devices in a 3D stack, is gaining attention, with CMOS back-end-of-line (BEOL) compatible ferroelectric (FE) diodes being ideal due to their two-terminal design and inherent… ▽ More The growth in data generation necessitates efficient data processing technologies to address the von Neumann bottleneck in conventional computer architecture. Memory-driven computing, which integrates non-volatile memory (NVM) devices in a 3D stack, is gaining attention, with CMOS back-end-of-line (BEOL) compatible ferroelectric (FE) diodes being ideal due to their two-terminal design and inherently selector-free nature, facilitating high-density crossbar arrays. Here, we demonstrate BEOL-compatible, high-performance FE-diodes scaled to 5, 10, and 20 nm FE Al0.72Sc0.28N/Al0.64Sc0.36N films. Through interlayer (IL) engineering, we show substantial improvements in the ON/OFF ratios (>166 times) and rectification ratios (>176 times) in these scaled devices. The superlative characteristics also enables 5-bit multi-state operation with a stable retention. We also experimentally and theoretically demonstrate the counterintuitive result that the inclusion of an IL can lead to a decrease in the ferroelectric switching voltage of the device. An in-depth analysis into the device transport mechanisms is performed, and our compact model aligns seamlessly with the experimental results. Our results suggest the possibility of using scaled AlxSc1-xN FE-diodes for high performance, low-power, embedded NVM. △ Less

Submitted 18 March, 2024; originally announced March 2024.

Multipolar magnetism in $5d^2$ vacancy-ordered halide double perovskites

Authors: Koushik Pradhan, Arun Paramekanti, Tanusri Saha-Dasgupta

Abstract: Vacancy-ordered halide double perovskites hosting 4d/5d transition metals have emerged as a distinct platform for investigating unconventional magnetism arising out of the interplay of strong atomic spin-orbit coupling (SOC) and Coulomb interactions. Focusing on the $d^2$ system Cs$_2$WCl$_6$, our ab initio electronic structure calculation reveals very narrow electronic bands, fulfilling the neces… ▽ More Vacancy-ordered halide double perovskites hosting 4d/5d transition metals have emerged as a distinct platform for investigating unconventional magnetism arising out of the interplay of strong atomic spin-orbit coupling (SOC) and Coulomb interactions. Focusing on the $d^2$ system Cs$_2$WCl$_6$, our ab initio electronic structure calculation reveals very narrow electronic bands, fulfilling the necessary condition to realize exotic orders. Using this input, we solve the many-body spin-orbit coupled single-site problem by exact diagonalization and show that the multiplet structure of Cs$_2$WCl$_6$ hosts ground non-Kramers doublets on W, with vanishing dipole moment and a small gap to an excited magnetic triplet. Our work provides the rationale for the observed strong deviation from the classic Kotani behaviour in Cs$_2$WCl$_6$ for the measured temperature dependence of the magnetic moment. The non-Kramers doublets on W exhibit non-zero quadrupolar and octupolar moments, and our calculated two-site exchange supports the dominance of inter-site octupolar exchange over quadrupolar interactions. We predict ferro-octupolar order with a transition temperature $T_c \sim 5$K which may get somewhat suppressed by quantum fluctuations and disorder; this could be tested in future low-temperature experiments. △ Less

Submitted 8 March, 2024; originally announced March 2024.

Comments: 8 pages, 5 figs, submitted to PRB

Journal ref: Phys. Rev. B 109, 184416 (2024)

Endless Dirac nodal lines and high mobility in kagome semimetal Ni3In2Se2 single crystal

Authors: Sanand Kumar Pradhan, Sharadnarayan Pradhan, Priyanath Mal, P. Rambabu, Archana Lakhani, Bipul Das, Bheema Lingam Chittari, G. R. Turpu, Pradip Das

Abstract: Kagome-lattice crystal is crucial in quantum materials research, exhibiting unique transport properties due to its rich band structure and the presence of nodal lines and rings. Here, we investigate the electronic transport properties and perform first-principles calculations for Ni$_{3}$In$_{2}$Se$_{2}$ kagome topological semimetal. First-principle calculations indicate six endless Dirac nodal li… ▽ More Kagome-lattice crystal is crucial in quantum materials research, exhibiting unique transport properties due to its rich band structure and the presence of nodal lines and rings. Here, we investigate the electronic transport properties and perform first-principles calculations for Ni$_{3}$In$_{2}$Se$_{2}$ kagome topological semimetal. First-principle calculations indicate six endless Dirac nodal lines and two nodal rings with a $π$-Berry phase in the Ni$_{3}$In$_{2}$Se$_{2}$ compound. The temperature-dependent resistivity is dominated by two scattering mechanisms: $s$-$d$ interband scattering occurs below 50 K, while electron-phonon ($e$-$p$) scattering is observed above 50 K. The magnetoresistance (MR) curve aligns with the theory of extended Kohler's rule, suggesting multiple scattering origins and temperature-dependent carrier densities. A maximum MR of 120\% at 2 K and 9 T, with a maximum estimated mobility of approximately 3000 cm$^{2}$V$^{-1}$s$^{-1}$ are observed. The Ni atom's hole-like d$_{x^{2}-y^{2} }$ and electron-like d$_{z^{2}}$ orbitals exhibit peaks and valleys, forming a local indirect-type band gap near the Fermi level (E$_{F}$). This configuration enhances the motion of electrons and holes, resulting in high mobility and relatively high magnetoresistance. △ Less

Submitted 6 January, 2024; originally announced January 2024.

Spin order dependent skyrmion stabilization in MnFeCoGe hexagonal magnets

Authors: Dola Chakrabartty, Mihir Sahoo, Amit Kumar, Sk Jamaluddin, Bimalesh Giri, Hitesh Chhabra, Kalpataru Pradhan, Ajaya K. Nayak

Abstract: Topological magnetic skyrmions in centrosymmetric systems exhibit a higher degrees of freedom in their helicity, hence possess a great potential in the advanced spintronics including skyrmion based quantum computation. However, the centrosymmetric magnets also display non-topological trivial bubbles along with the topological skyrmions. Hence it is utmost priority to investigate the impact of diff… ▽ More Topological magnetic skyrmions in centrosymmetric systems exhibit a higher degrees of freedom in their helicity, hence possess a great potential in the advanced spintronics including skyrmion based quantum computation. However, the centrosymmetric magnets also display non-topological trivial bubbles along with the topological skyrmions. Hence it is utmost priority to investigate the impact of different magnetic ground states and their underlying interactions on the stabilization of magnetic skyrmions in cetrosymmetric magnets. Here, we present a combined theoretical and experimental study on the role of non-collinear magnetic ground state on the skyrmion stabilization in a series of exchange frustrated non-collinear ferromagnetic system MnFe1-xCoxGe. With the help of neutron diffraction (ND) and Lorentz transmission electron microscopy (LTEM) studies, we show that hexagonal skyrmions lattice emerges as a stable field driven state only when the underlying magnetic ground state is collinear with easy-axis anisotropy. In contrast, non-topological type-II bubbles are found to be stable state in the case of non-collinear magnetic ordering with partial in-plane anisotropy. Furthermore, we also find that the skyrmions transform to the non-topological bubbles when the system undergoes a spin reorientation transition from the easy-axis to easy-cone ferromagnetic phase. Our results categorically establish the significant role of in-plane magnetic moment/anisotropy that hinders the stability of skyrmion both in the case of collinear and non-collinear magnets. Thus, the present study offers a wide range of opportunities to manipulate the stability of dipolar skyrmions by changing the intrinsic characteristics of the materials. △ Less

Submitted 27 November, 2023; originally announced November 2023.

Comments: 18 pages, 4 figures

Report number: https://pubs.acs.org/doi/10.1021/acsnano.4c13876

Anomalous Hall effect induced by Berry curvature in topological nodal-line van der Waals ferromagnet Fe$_4$GeTe$_2$

Authors: Satyabrata Bera, Sudipta Chatterjee, Subhadip Pradhan, Suman Kalyan Pradhan, Sk Kalimuddin, Arnab Bera, Ashis K. Nandy, Mintu Mondal

Abstract: The exploration of nontrivial transport phenomena associated with the interplay between magnetic order and spin-orbit coupling (SOC), particularly in van der Waals (vdW) systems has gained a resurgence of interest due to their easy exfoliation, ideal for two-dimensional (2D) spintronics. We report the near room temperature quasi-2D ferromagnet, Fe$_4$GeTe$_2$ from the iron-based vdW family (Fe… ▽ More The exploration of nontrivial transport phenomena associated with the interplay between magnetic order and spin-orbit coupling (SOC), particularly in van der Waals (vdW) systems has gained a resurgence of interest due to their easy exfoliation, ideal for two-dimensional (2D) spintronics. We report the near room temperature quasi-2D ferromagnet, Fe$_4$GeTe$_2$ from the iron-based vdW family (Fe$_n$GeTe$_2$, $n$=3,4,5), exhibiting a large anomalous Hall conductivity (AHC), $σ^A_{xy}$ $\sim$ 490 $Ω^{-1}\textrm{cm}^{-1}$ at 2 K. The near quadratic behavior of anomalous Hall resistivity ($ρ^{A}_{xy}$) with the longitudinal resistivity ($ρ_{xx}$) suggests that a dominant AHC contribution is coming from an intrinsic Berry curvature (BC) mechanism. Concomitantly, the electronic structure calculations reveal a large BC arising from SOC induced gaped nodal lines around the Fermi level, governing such large AHC property. Moreover, we also report an exceptionally large anomalous Hall angle ($\simeq$ 10.6\%) and Hall factor ($\simeq$ 0.22 V$^{-1}$) values which so far, are the largest in compared to those for other members in this vdW family. △ Less

Submitted 18 August, 2023; originally announced August 2023.

Comments: 7 pages, 4 figures, supplementary

Raman signatures of lattice dynamics across inversion symmetry breaking phase transition in quasi-1D compound, (TaSe$_4$)$_3$I

Authors: Arnab Bera, Partha Sarathi Rana, Suman Kalyan Pradhan, Mainak Palit, Sk Kalimuddin, Satyabrata Bera, Tuhin Debnath, Soham Das, Deep Singha Roy, Hasan Afzal, Subhadeep Datta, Mintu Mondal

Abstract: Structural phase transition can occur due to complex mechanisms other than simple dynamical instability, especially when the parent and daughter structure is of low dimension. This article reports such an inversion symmetry-breaking structural phase transition in a quasi-1D compound (TaSe$_4$)$_3$I at T$_S\sim$ 141~K studied by Raman spectroscopy. Our investigation of collective lattice dynamics r… ▽ More Structural phase transition can occur due to complex mechanisms other than simple dynamical instability, especially when the parent and daughter structure is of low dimension. This article reports such an inversion symmetry-breaking structural phase transition in a quasi-1D compound (TaSe$_4$)$_3$I at T$_S\sim$ 141~K studied by Raman spectroscopy. Our investigation of collective lattice dynamics reveals three additional Raman active modes in the low-temperature non-centrosymmetric structure. Two vibrational modes become Raman active due to the absence of an inversion center, while the third mode is a soft phonon mode resulting from the vibration of Ta atoms along the \{-Ta-Ta-\} chains. Furthermore, the most intense Raman mode display Fano-shaped asymmetry, inferred as the signature of strong electron-phonon coupling. The group theory and symmetry analysis of Raman spectra confirm the displacive-first-order nature of the structural transition. Therefore, our results establish (TaSe$_4)_3$I as a model system with broken inversion symmetry and strong electron-phonon coupling in the quasi-1D regime. △ Less

Submitted 21 July, 2023; originally announced July 2023.

Comments: Main text - 6 figures, 11 pages, supplementary - 10 figures, 13 pages

Interfacial-antiferromagnetic-coupling driven magneto-transport properties in ferromagnetic superlattices

Authors: Sandip Halder, Subrat K. Das, Kalpataru Pradhan

Abstract: We explore the role of interfacial antiferromagnetic interaction in coupled soft and hard ferromagnetic layers to ascribe the complex variety of magneto-transport phenomena observed in $La_{0.7}Sr_{0.3}MnO_3/SrRuO_3$ (LSMO/SRO) superlattices (SLs) within a one-band double exchange model using Monte-Carlo simulations. Our calculations incorporate the magneto-crystalline anisotropy interactions and… ▽ More We explore the role of interfacial antiferromagnetic interaction in coupled soft and hard ferromagnetic layers to ascribe the complex variety of magneto-transport phenomena observed in $La_{0.7}Sr_{0.3}MnO_3/SrRuO_3$ (LSMO/SRO) superlattices (SLs) within a one-band double exchange model using Monte-Carlo simulations. Our calculations incorporate the magneto-crystalline anisotropy interactions and super-exchange interactions of the constituent materials, and two types of antiferromagnetic interactions between Mn and Ru ions at the interface: (i) carrier-driven and (ii) Mn-O-Ru bond super-exchange in the model Hamiltonian to investigate the properties along the hysteresis loop. We find that the antiferromagnetic coupling at the interface induces the LSMO and SRO layers to align in anti-parallel orientation at low temperatures. Our results reproduce the positive exchange bias of the minor loop and inverted hysteresis loop of LSMO/SRO SL at low temperatures as reported in experiments. In addition, conductivity calculations show that the carrier-driven antiferromagnetic coupling between the two ferromagnetic layers steers the SL towards a metallic (insulating) state when LSMO and SRO are aligned in anti-parallel (parallel) configuration, in good agreement with the experimental data. This demonstrate the necessity of carrier-driven antiferromagnetic interactions at the interface to understand the one-to-one correlation between the magnetic and transport properties observed in experiments. For high temperature, just below the ferromagnetic $T_C$ of SRO, we unveiled the unconventional three-step flipping process along the magnetic hysteresis loop. We emphasize the key role of interfacial antiferromagnetic coupling between LSMO and SRO to understand these multiple-step flipping processes along the hysteresis loop. △ Less

Submitted 26 June, 2023; originally announced June 2023.

Comments: 13 pages and 11 figures

High transport spin polarization in the van der Waals ferromagnet Fe$_4$GeTe$_2$

Authors: Deepti Rana, Monika Bhakar, Basavaraja G., Satyabrata Bera, Neeraj Saini, Suman Kalyan Pradhan, Mintu Mondal, Mukul Kabir, Goutam Sheet

Abstract: The challenging task of scaling-down the size of the power saving electronic devices can be accomplished by exploiting the spin degree of freedom of the conduction electrons in van der Waals (vdW) spintronic architectures built with 2D materials. One of the key components of such a device is a near-room temperature 2D ferromagnet with good metallicity that can generate a highly spin-polarized elec… ▽ More The challenging task of scaling-down the size of the power saving electronic devices can be accomplished by exploiting the spin degree of freedom of the conduction electrons in van der Waals (vdW) spintronic architectures built with 2D materials. One of the key components of such a device is a near-room temperature 2D ferromagnet with good metallicity that can generate a highly spin-polarized electronic transport current. However, most of the known 2D ferromagnets have either a very low temperature ordering, poor conductivity, or low spin polarization. In this context, the Fe$_n$GeTe$_2$ (with $n\geq3$) family of ferromagnets stand out due to their near-room temperature ferromagnetism and good metallicity. We have performed spin-resolved Andreev reflection spectroscopy on Fe$_4$GeTe$_2$ ($T_{Curie} \sim$ 273 K) and demonstrated that the ferromagnet is capable of generating a very high transport spin polarization, exceeding 50$\%$. This makes Fe$_4$GeTe$_2$ a strong candidate for application in all-vdW power-saving spintronic devices. △ Less

Submitted 1 June, 2023; originally announced June 2023.

Comments: Accepted for publication in Physical Review B

Thermally-driven Multilevel Non-volatile Memory with Monolayer MoS2 for Neuro-inspired Artificial Learning

Authors: Sameer Kumar Mallik, Roshan Padhan, Mousam Charan Sahu, Suman Roy, Gopal K Pradhan, Prasana Kumar Sahoo, Saroj Prasad Dash, Satyaprakash Sahoo

Abstract: The demands of modern electronic components require advanced computing platforms for efficient information processing to realize in-memory operations with a high density of data storage capabilities towards developing alternatives to von Neumann architectures. Herein, we demonstrate the multifunctionality of monolayer MoS2 mem-transistors which can be used as a high-geared intrinsic transistor at… ▽ More The demands of modern electronic components require advanced computing platforms for efficient information processing to realize in-memory operations with a high density of data storage capabilities towards developing alternatives to von Neumann architectures. Herein, we demonstrate the multifunctionality of monolayer MoS2 mem-transistors which can be used as a high-geared intrinsic transistor at room temperature; however, at a high temperature (>350 K), they exhibit synaptic multi-level memory operations. The temperature-dependent memory mechanism is governed by interfacial physics, which solely depends on the gate field modulated ion dynamics and charge transfer at the MoS2/dielectric interface. We have proposed a non-volatile memory application using a single FET device where thermal energy can be ventured to aid the memory functions with multi-level (3-bit) storage capabilities. Furthermore, our devices exhibit linear and symmetry in conductance weight updates when subjected to electrical potentiation and depression. This feature has enabled us to attain a high classification accuracy while training and testing the Modified National Institute of Standards and Technology datasets through artificial neural network simulation. This work paves the way for new avenues in 2D semiconductors toward reliable data processing and storage with high-packing density arrays for brain-inspired artificial learning. △ Less

Submitted 3 May, 2023; originally announced May 2023.

Journal ref: ACS Applied Materials & Interfaces 2023

Centrosymmetric-noncentrosymmetric Structural Phase Transition in Quasi one-dimensional compound, (TaSe$_4$)$_3$I

Authors: Arnab Bera, Samir Rom, Suman Kalyan Pradhan, Satyabrata Bera, Sk Kalimuddin, Tanusri Saha-Dasgupta, Mintu Mondal

Abstract: (TaSe$_4$)$_3$I, a compound belonging to the family of quasi-one-dimensional transition-metal tetrachalcogenides, has drawn significant attention due to a recent report on possible coexistence of two antagonistic phenomena, superconductivity and magnetism below 2.5~K (Bera et. al, arXiv:2111.14525). Here, we report a structural phase transition of the trimerized phase at temperature, $T~\simeq$~14… ▽ More (TaSe$_4$)$_3$I, a compound belonging to the family of quasi-one-dimensional transition-metal tetrachalcogenides, has drawn significant attention due to a recent report on possible coexistence of two antagonistic phenomena, superconductivity and magnetism below 2.5~K (Bera et. al, arXiv:2111.14525). Here, we report a structural phase transition of the trimerized phase at temperature, $T~\simeq$~145~K using Raman scattering, specific heat, and electrical transport measurements. The temperature-dependent single-crystal X-ray diffraction experiments establish the phase transition from a high-temperature centrosymmetric to a low-temperature non-centrosymmetric structure, belonging to the same tetragonal crystal family. The first-principle calculation finds the aforementioned inversion symmetry-breaking structural transition to be driven by the hybridization energy gain due to the off-centric movement of the Ta atoms, which wins over the elastic energy loss. △ Less

Submitted 11 April, 2023; originally announced April 2023.

Comments: 11 pages, 5 figures, Under review as a regular article

Tailoring the interfacial magnetic interaction in epitaxial La$_{0.7}$Sr$_{0.3}$MnO$_3$/Sm$_{0.5}$Ca$_{0.5}$MnO$_3$ heterostructures

Authors: Snehal Mandal, Sandip Halder, Biswarup Satpati, Kalpataru Pradhan, I. Das

Abstract: Interface engineering in complex oxide heterostructures has developed into a flourishing field as various intriguing physical phenomena can be demonstrated which are otherwise absent in their constituent bulk compounds. Here we present La$_{0.7}$Sr$_{0.3}$MnO$_3$ (LSMO) / Sm$_{0.5}$Ca$_{0.5}$MnO$_3$ (SCMO) based heterostructures showcasing the dominance of antiferromagnetic interaction with increa… ▽ More Interface engineering in complex oxide heterostructures has developed into a flourishing field as various intriguing physical phenomena can be demonstrated which are otherwise absent in their constituent bulk compounds. Here we present La$_{0.7}$Sr$_{0.3}$MnO$_3$ (LSMO) / Sm$_{0.5}$Ca$_{0.5}$MnO$_3$ (SCMO) based heterostructures showcasing the dominance of antiferromagnetic interaction with increasing interfaces. In particular, we demonstrate that exchange bias can be tuned by increasing the number of interfaces; while, on the other hand, electronic phase separation can be mimicked by creating epitaxial multilayers of such robust charge ordered antiferromagnetic (CO-AF) and ferromagnetic (FM) manganites with increased AF nature, which otherwise would require intrinsically disordered mixed phase materials. The origin of these phenomena is discussed in terms of magnetic interactions between the interfacial layers of the LSMO/SCMO. A theoretical model has been utilized to account for the experimentally observed magnetization curves in order to draw out the complex interplay between FM and AF spins at interfaces with the onset of charge ordering. △ Less

Submitted 31 March, 2023; originally announced March 2023.

Comments: 8 figures

Enhanced coercivity and emergence of spin cluster glass state in 2D ferromagnetic material Fe3GeTe2

Authors: Satyabrata Bera, Suman Kalyan Pradhan, Riju Pal, Buddhadeb Pal, Arnab Bera, Sk Kalimuddin, Manjil Das, Deep Singha Roy, Hasan Afzal, Atindra Nath Pal, Mintu Mondal

Abstract: Two-dimensional (2D) van der Waals (vdW) magnetic materials with high coercivity and high $T_\text{C}$ are desired for spintronics and memory storage applications. Fe$_3$GeTe$_2$ (F3GT) is one such 2D vdW ferromagnet with a reasonably high $T_\text{C}$, but with a very low coercive field, $H_\text{c}$ ($\lesssim$100~Oe). Some of the common techniques of enhancing $H_\text{c}$ are by introducing pi… ▽ More Two-dimensional (2D) van der Waals (vdW) magnetic materials with high coercivity and high $T_\text{C}$ are desired for spintronics and memory storage applications. Fe$_3$GeTe$_2$ (F3GT) is one such 2D vdW ferromagnet with a reasonably high $T_\text{C}$, but with a very low coercive field, $H_\text{c}$ ($\lesssim$100~Oe). Some of the common techniques of enhancing $H_\text{c}$ are by introducing pinning centers, defects, stress, doping, etc. They involve the risk of undesirable alteration of other important magnetic properties. Here we propose a very easy, robust, and highly effective method of phase engineering by altering the sample growth conditions to greatly enhance the intrinsic coercivity (7-10 times) of the sample, without compromising its fundamental magnetic properties ($T_\text{C}\simeq$210K). The phase-engineered sample (F3GT-2) comprises of parent F3GT phase with a small percentage of randomly embedded clusters of a coplanar FeTe (FT) phase. The FT phase serves as both mosaic pinning centers between grains of F3GT above its antiferromagnetic transition temperature ($T_\text{C1}\sim$70~K) and also as anti-phase domains below $T_\text{C1}$. As a result, the grain boundary disorder and metastable nature are greatly augmented, leading to highly enhanced coercivity, cluster spin glass, and meta-magnetic behavior. The enhanced coercivity ($\simeq$1~kOe) makes F3GT-2 much more useful for memory storage applications and is likely to elucidate a new route to tune useful magnetic properties. Moreover, this method is much more convenient than hetero-structure and other cumbersome techniques. △ Less

Submitted 29 December, 2022; originally announced December 2022.

Comments: 12 pages, 11 figures

Probing octupolar hidden order via Janus impurities

Authors: Sreekar Voleti, Koushik Pradhan, Subhro Bhattacharjee, Tanusri Saha-Dasgupta, Arun Paramekanti

Abstract: Quantum materials with non-Kramers doublets are a fascinating venue to realize multipolar hidden orders. Impurity probes which break point group symmetries, such as implanted muons or substitutional impurities, split the non-Kramers degeneracy and exhibit a Janus-faced influence in such systems: they can destroy the very order they seek to probe. Here, we explore this duality in cubic osmate doubl… ▽ More Quantum materials with non-Kramers doublets are a fascinating venue to realize multipolar hidden orders. Impurity probes which break point group symmetries, such as implanted muons or substitutional impurities, split the non-Kramers degeneracy and exhibit a Janus-faced influence in such systems: they can destroy the very order they seek to probe. Here, we explore this duality in cubic osmate double perovskites which are candidates for exotic $d$-orbital octupolar order competing with quadrupolar states. Using {\it ab initio} computations, Landau theory, and Monte Carlo simulations, we show that Janus impurities induce local strain fields, nucleating quadrupolar puddles and suppressing the octupolar $T_c$. At the same time, strains mix the non-Kramers doublet with an excited magnetic triplet, creating parasitic dipole moments which directly expose the hidden octupolar order parameter. Our work unravels this Janus duality in recent impurity nuclear magnetic resonance (NMR) experiments, with important implications for uncovering hidden order in diverse multipolar materials. △ Less

Submitted 14 February, 2024; v1 submitted 14 November, 2022; originally announced November 2022.

Comments: Main Text: 14 pages, 7 figures, 1 Table (published - open access)

Journal ref: npj Quantum Materials 8:42 (2023)

Nonlinear coherent light-matter interaction in 2D MoSe$_2$ nanoflakes for all-optical switching and logic applications

Authors: Sk Kalimuddin, Biswajit Das, Nabamita Chakraborty, Madhupriya Samanta, Satyabrata Bera, Arnab Bera, Deep Singha Roy, Suman Kalyan Pradhan, Kalyan K. Chattopadhyay, Mintu Mondal

Abstract: We report a strong nonlinear optical response of 2D MoSe$_2$ nanoflakes (NFs) through spatial self-phase modulation (SSPM) and cross-phase modulation (XPM) induced by nonlocal coherent light-matter interactions. The coherent interaction of light and MoSe$_2$ NFs creates the SSPM of laser beams, forming concentric diffraction rings. The nonlinear refractive index ($n_2$) and the third-order broadba… ▽ More We report a strong nonlinear optical response of 2D MoSe$_2$ nanoflakes (NFs) through spatial self-phase modulation (SSPM) and cross-phase modulation (XPM) induced by nonlocal coherent light-matter interactions. The coherent interaction of light and MoSe$_2$ NFs creates the SSPM of laser beams, forming concentric diffraction rings. The nonlinear refractive index ($n_2$) and the third-order broadband nonlinear optical susceptibility ($χ^{(3)}$) of MoSe$_2$ NFs are determined from the self diffraction pattern at different exciting wavelengths of 405, 532, and 671 nm with varying the laser intensity. The evolution and deformation of diffraction ring patterns are observed and analyzed by the `wind-chime' model and thermal effect. By taking advantage of the reverse saturated absorption of 2D SnS$_2$ NFs compared to MoSe$_2$, an all-optical diode has been designed with MoSe$_2$/SnS$_2$ hybrid structure to demonstrate the nonreciprocal light propagation. Also a few other optical devices based on MoSe$_2$ and other semiconducting materials such as Bi$_2$Se$_3$, CuPc, and graphene have been investigated. The all-optical logic gates and all-optical information conversion have been demonstrated through the XPM technique using two laser beams. The proposed optical scheme based on MoSe$_2$ NFs has been demonstrated as a potential candidate for all-optical nonlinear photonic devices such as all-optical diodes and all-optical switches. △ Less

Submitted 25 June, 2022; originally announced June 2022.

Comments: 20 pages, 6 figures, accepted in advanced optical materials

Revisiting the magnetic ordering through anisotropic magnetic entropy change in quasi-two-dimensional metallic ferromagnet, Fe$_4$GeTe$_2$

Authors: Satyabrata Bera, Suman Kalyan Pradhan, Md Salman Khan, Riju Pal, Buddhadeb Pal, Sk Kalimuddin, Arnab Bera, Biswajit Das, Atindra Nath Pal, Mintu Mondal

Abstract: We have investigated the nature of ferromagnetic order and phase transitions in two dimensional (2D) van der Waals (vdW) layered material, Fe$_4$GeTe$_2$ through measurements of magnetization, magneto-caloric Effect (MCE), and heat capacity. Fe$_4$GeTe$_2$ hosts a complex magnetic phase with two distinct transitions: paramagnetic to ferromagnetic at around $T_\text{C}$ $\sim$ 266 K and another spi… ▽ More We have investigated the nature of ferromagnetic order and phase transitions in two dimensional (2D) van der Waals (vdW) layered material, Fe$_4$GeTe$_2$ through measurements of magnetization, magneto-caloric Effect (MCE), and heat capacity. Fe$_4$GeTe$_2$ hosts a complex magnetic phase with two distinct transitions: paramagnetic to ferromagnetic at around $T_\text{C}$ $\sim$ 266 K and another spin reorientation transition (SRT) at around $T_\text{SRT}$ $\sim $ 100 K. The magnetization measurements shows a prominent thermal hysteresis in proximity to $T_\text{SRT}$ at $H\parallel c$, which implies the first-order nature of SRT. Reasonable MCE has been observed around both transition temperatures ( at around $T_\text{C}$, -$Δ$S$_M^\text{max}$ = 1.95 and 1.99 J.Kg$^{-1}$K$^{-1}$ and at around $T_\text{SRT}$, -$Δ$S$_M^\text{max}$= 3.9 and 2.4 J.Kg$^{-1}$K$^{-1}$ along $H\parallel ab$ and $H\parallel c$ respectively) at 50 kOe magnetic field change. The above results reveal higher MCE value at $T_\text{SRT}$ compared to the values of MCE at $T_\text{C}$. The scaling analysis of MCE at $T_\text{C}$, shows that the rescaled $Δ$S$_M (T, H)$ follow a universal curve confirming the second-order character of the ferromagnetic transition. The same scaling analysis of MCE breaks down at $T_\text{SRT}$ suggesting that SRT is not a second order phase transition. The exponent $n$ from field dependence of magnetic entropy change presents a maximum of $|n|>2$ confirming the first-order nature of SRT. △ Less

Submitted 25 June, 2022; originally announced June 2022.

Comments: 12 pages, 10 figures + appendix

Design of acoustic diffraction plates for manipulating ultrasound in liquid Helium

Authors: Ayanesh Maiti, Dillip K. Pradhan, Ambarish Ghosh

Abstract: Many experiments in liquid Helium, such as the optical imaging of exploding electron bubbles, which enables research on individual particles under applied conditions, involve the usage of ultrasound generated by piezoelectric transducers. Previous studies either use planar transducers, which limits the maximum sound intensity and the spatial resolution, or curved transducers, which only allow obse… ▽ More Many experiments in liquid Helium, such as the optical imaging of exploding electron bubbles, which enables research on individual particles under applied conditions, involve the usage of ultrasound generated by piezoelectric transducers. Previous studies either use planar transducers, which limits the maximum sound intensity and the spatial resolution, or curved transducers, which only allow observations at fixed foci and make it difficult to apply uniform electric fields. In this paper, we introduce the usage of acoustic diffraction plates in liquid Helium to amplify ultrasonic pressure oscillations at an arbitrary set of primary foci coupled with large counts of secondary foci, all of which can be freely moved around by changing the ultrasound frequency. The frequency dependence also allows us to generate controlled Faraday instabilities at the surface, which enables the generation of multi-electron bubbles with desired parameters. △ Less

Submitted 11 March, 2022; originally announced March 2022.

Itinerant ferromagnetism in a spin-fermion model for diluted spin systems

Authors: Sourav Chakraborty, Sandip Halder, Kalpataru Pradhan

Abstract: We investigate the itinerant ferromagnetism using a diluted spin-fermion model, derived from a repulsive Hubbard model, where itinerant fermions are coupled antiferromagnetically to auxiliary fields in a three-dimensional simple cubic lattice. We focus, in particular, on understanding the spin-dependent transport properties of the itinerant fermions in the impurity band by taking positional disord… ▽ More We investigate the itinerant ferromagnetism using a diluted spin-fermion model, derived from a repulsive Hubbard model, where itinerant fermions are coupled antiferromagnetically to auxiliary fields in a three-dimensional simple cubic lattice. We focus, in particular, on understanding the spin-dependent transport properties of the itinerant fermions in the impurity band by taking positional disorder of the auxiliary fields into account. For on-site repulsion $U$ $\sim$ bandwidth the density of the itinerant carriers confined to the impurity band, play a key role in determining the kinetic energy of the system and consequently the carrier spin polarization. Our semi-classical Monte Carlo calculations show that the ferromagnetic transition temperature of the carrier spins indeed shows an optimization behavior with the carrier density. We calculate the transport properties in details to establish a one-to-one correspondence between the magnetic and transport properties of the carriers. Our results obtained beyond the perturbative regime are significant for understanding the ferromagnetism in diluted magnetic semiconductors. △ Less

Submitted 28 January, 2022; originally announced January 2022.

Comments: 8 pages, 8 figures

Antiferromagnetism beyond classical percolation threshold in the site-diluted half-filled one-band Hubbard model in three dimensions

Authors: Sourav Chakraborty, Anamitra Mukherjee, Kalpataru Pradhan

Abstract: We investigate the impact of site dilution by setting the on-site repulsion strength ($U$) to zero at a fraction of sites in the half-filled Hubbard model on a simple cubic lattice. We employ a semi-classical Monte-Carlo approach first to recover the zero dilution (undiluted $x=1$) properties, including $U$ dependence of insulator to metal crossover temperature scale $T^*$ and long-range staggered… ▽ More We investigate the impact of site dilution by setting the on-site repulsion strength ($U$) to zero at a fraction of sites in the half-filled Hubbard model on a simple cubic lattice. We employ a semi-classical Monte-Carlo approach first to recover the zero dilution (undiluted $x=1$) properties, including $U$ dependence of insulator to metal crossover temperature scale $T^*$ and long-range staggered antiferromagnetic ordering temperature ($T_N$). For the non-perturbative regime of $U \sim$ bandwidth, we find a rapid suppression of $T^*$ with reducing $x$ from 1 to 0.7. However, $T_N$ remains unchanged in this dilution range, showing a weakening of the insulating state but not of the magnetic order. At $x \leq 0.7$, $T^*$ and $T_N$ coincide and are suppressed together with further increase in site-dilution. Finally, the system loses the magnetic order and the insulating state for $x=0.15$, significantly below the classical percolation threshold $x_p^{sc} (\sim 0.31$). We show that the induced moments on $U=0$ sites drive the magnetic order below the classical percolation limit by studying local moment systematics and finite-size analysis of magnetic order. At the end, we show that either increasing $U$ to large values or raising temperature beyond a $U$ dependent critical value, suppresses the induced local moments of the $U=0$ sites and recovers the classical percolation threshold. △ Less

Submitted 8 December, 2021; originally announced December 2021.

Comments: 7 pages including supplementary information

Electric Field Control of Magnetism of Mn dimer supported on Carbon-doped-h-BN surface

Authors: Mihir Ranjan Sahoo, Saroj Kumar Nayak, Kalpataru Pradhan

Abstract: Using density functional theory we show that the interaction between two Mn atoms can be tuned from anti-ferromagnetic (AFM) to ferromagnetic (FM) state by creating charge disproportion between the two on a 2D surface. The non-metallic planar heterostructures, the 2D surface, in our work is designed by doping carbon hexagon rings in a hexagonal boron nitride (h-BN) sheet. In addition, we show that… ▽ More Using density functional theory we show that the interaction between two Mn atoms can be tuned from anti-ferromagnetic (AFM) to ferromagnetic (FM) state by creating charge disproportion between the two on a 2D surface. The non-metallic planar heterostructures, the 2D surface, in our work is designed by doping carbon hexagon rings in a hexagonal boron nitride (h-BN) sheet. In addition, we show that an external electric field can be used to control the charge disproportion and hence the magnetism. In fact, our calculations demonstrate that the magnetic states of the dimer can be switched from AFM to FM or vice versa in an external electric field. The origin of this magnetic switching is explained using the charge transfer from (or to) the Mn dimer to (or from) the 2D material. The switching between anti-ferromagnetic to ferromagnetic states can be useful for future spintronic applications. △ Less

Submitted 1 December, 2021; originally announced December 2021.

Comments: 17 pages, 6 figures

Phonon-based partition of (ZnSe-like) semiconductor mixed crystals on approach to their pressure-induced structural transition

Authors: M. B. Shoker, O. Pagès, V. J. B. Torres, A. Polian, J. -P. Itié, G. K. Pradhan, C. Narayana, M. N. Rao, R. Rao, C. Gardiennet, G. Kervern, K. Strzałkowski, F. Firszt

Abstract: The generic 1-bond:2-mode percolation type Raman signal inherent to the short bond of common (A,B)C semiconductor mixed crystals with zincblende (cubic) structure is exploited as a sensitive mesoscope to explore how various ZnSe-based systems engage their pressure-induced structural transition (to rock-salt) at the sub-macroscopic scale with a focus on ZnCdSe. The Raman doublet, that distinguishes… ▽ More The generic 1-bond:2-mode percolation type Raman signal inherent to the short bond of common (A,B)C semiconductor mixed crystals with zincblende (cubic) structure is exploited as a sensitive mesoscope to explore how various ZnSe-based systems engage their pressure-induced structural transition (to rock-salt) at the sub-macroscopic scale with a focus on ZnCdSe. The Raman doublet, that distinguishes between the AC- and BC-like environments of the short bond, is reactive to pressure: either it closes (ZnBeSe, ZnSeS) or it opens (ZnCdSe), depending on the hardening rates of the two environments under pressure. A partition of II-VI and III-V mixed crystals is accordingly outlined. Of special interest is the closure case, in which the system resonantly stabilizes ante transition at its exceptional point corresponding to a virtual decoupling, by overdamping, of the two oscillators forming the Raman doublet. At this limit, the chain-connected bonds of the short species (taken as the minor one) freeze along the chain into a rigid backbone. This reveals a capacity behind alloying to reduce the thermal conductivity. △ Less

Submitted 17 August, 2020; originally announced August 2020.

Unexpectedly absence of Marangoni convection in an evaporating water meniscus

Authors: Tapan Kumar Pradhan, Pradipta Kumar Panigrahi

Abstract: It is usually expected that surface tension driven flow dominates at small scales. Evaporation from the meniscus of ethanol/methanol confined in a capillary induces Marangoni convection at the meniscus which has been investigated by previous researchers. However, Marangoni convection is unexpectedly absent at an evaporating water meniscus confined inside a small micro-channel which is reported in… ▽ More It is usually expected that surface tension driven flow dominates at small scales. Evaporation from the meniscus of ethanol/methanol confined in a capillary induces Marangoni convection at the meniscus which has been investigated by previous researchers. However, Marangoni convection is unexpectedly absent at an evaporating water meniscus confined inside a small micro-channel which is reported in this work. The velocity near the water meniscus is studied using confocal micro-PIV. The water meniscus is formed at the end of a micro-channel filled with water keeping the meniscus exposed to atmosphere. The flow near the evaporating water meniscus is caused by combined effect of capillary flow to replenish water loss at the meniscus and buoyancy flow caused by evaporation induced temperature gradient. Unidirectional capillary flow dominates for small capillary size where as circulating buoyancy convection dominates in larger capillary size. The reported unexpected behavior of flow at the evaporating water meniscus will be helpful to understand the inter-facial phenomena in future studies. △ Less

Submitted 22 April, 2020; v1 submitted 3 April, 2020; originally announced April 2020.

Impact of Next-Nearest-Neighbor hopping on Ferromagnetism in Diluted Magnetic Semiconductors

Authors: Sourav Chakraborty, Subrat K Das, Kalpataru Pradhan

Abstract: Being a wide band gap system GaMnN attracted considerable interest after the discovery of highest reported ferromagnetic transition temperature $T_C$ $\sim$ 940 K among all diluted magnetic semiconductors. Later it become a debate due to the observation of either a ferromagnetic state with very low $T_C$ $\sim$ 8 K or sometimes no ferromagnetic state at all. We address these issues by calculating… ▽ More Being a wide band gap system GaMnN attracted considerable interest after the discovery of highest reported ferromagnetic transition temperature $T_C$ $\sim$ 940 K among all diluted magnetic semiconductors. Later it become a debate due to the observation of either a ferromagnetic state with very low $T_C$ $\sim$ 8 K or sometimes no ferromagnetic state at all. We address these issues by calculating the ferromagnetic window, $T_C$ Vs $p$, within a $t-t'$ Kondo lattice model using a spin-fermion Monte-Carlo method on a simple cubic lattice. We exploit the next-nearest-neighbor hopping $t'$ to tune the degree of delocalization of the free carriers and show that carrier localization (delocalization) significantly widen (shrunken) the ferromagnetic window with a reduction (enhancement) of the optimum $T_C$. We connect our results with the experimental findings and try to understand the ambiguities in ferromagnetism in GaMnN. △ Less

Submitted 15 December, 2020; v1 submitted 30 March, 2020; originally announced March 2020.

Comments: 10 pages, 7 figures

Journal ref: Phys. Rev. B 102, 245112 (2020)

Suppressing convection strength using confinement during protein crystallization

Authors: Tapan Kumar Pradhan, Pradipta Kumar Panigrahi

Abstract: Fluid convection during protein crystallization plays a significant role in determining crystal growth rate and crystal quality. Crystals grown in reduced flow strength gives better quality crystal. Hence, tuning the flow strength is very essential in the crystal growth process. In this work, we have demonstrated a new method to suppress the flow strength using confinement effect during vapor diff… ▽ More Fluid convection during protein crystallization plays a significant role in determining crystal growth rate and crystal quality. Crystals grown in reduced flow strength gives better quality crystal. Hence, tuning the flow strength is very essential in the crystal growth process. In this work, we have demonstrated a new method to suppress the flow strength using confinement effect during vapor diffusion method of protein crystallization where the crystal is grown inside an evaporating droplet. Flow study is carried out at four different confinement conditions to study the effect of confinement. Flow inside the droplet is caused by evaporation induced natural convection which is measured by micro-PIV method. Also concentration gradient generated around the growing crystal also induces buoyancy driven flow around the protein crystal during the crystal growth phase. The evaporation rate from the droplet and the flow strength inside the droplet get suppressed by increasing confinement. Hence, the flow strength can be tuned by adjusting the confinement which is a very simple method to tune the flow strength. △ Less

Submitted 19 March, 2020; originally announced March 2020.

Thermal conductivity of free-standing silicon nanowire using Raman spectroscopy

Authors: Sandhyarani Sahoo, Sameer Kumar Mallik, Mousam Charan Sahu, Anjana Joseph, Bibhudutta Rout, Gopal K. Pradhan, Satyaprakash Sahoo

Abstract: Low dimensional systems, nanowires, in particular, have exhibited excellent optical and electronic properties. Understanding the thermal properties in semiconductor nanowires is very important for their applications in their electronic devices. In the present study, the thermal conductivity of a freestanding silicon nanowire (NW) is estimated employing the Raman spectroscopy. The advantage of this… ▽ More Low dimensional systems, nanowires, in particular, have exhibited excellent optical and electronic properties. Understanding the thermal properties in semiconductor nanowires is very important for their applications in their electronic devices. In the present study, the thermal conductivity of a freestanding silicon nanowire (NW) is estimated employing the Raman spectroscopy. The advantage of this technique is that the light source (laser) can be used both as heating and excitation source. The variations of the first-order Raman peak position of the freestanding silicon NW with respect to temperature and laser power are carried out. A critical analysis of effective laser power absorbed by exposed silicon NW, the detailed Raman study along with the concept of longitudinal heat distribution in silicon NW, the thermal conductivity of the freestanding silicon NW of 112 nm diameter is estimated to be ~53 W/m.K. △ Less

Submitted 26 February, 2020; originally announced February 2020.

Effect of A-site ionic radius on metamagnetic transition in charge ordered $Sm_{0.5}(Ca_{0.5-y}Sr_{y})MnO_3$ compounds

Authors: Sanjib Banik, Kalpataru Pradhan, I. Das

Abstract: We investigate the ultra-sharp jump in the isothermal magnetization and the resistivity in the polycrystalline $Sm_{0.5}(Ca_{0.5-y}Sr_{y})MnO_3$ $(y = 0, 0.1, 0.2, 0.25, 0.3, 0.5)$ compounds. The critical field $(H_{cr})$, required for the ultra-sharp jump, decreases with increase of `Sr' concentration, i.e. with increase of average A-site ionic radius $\langle r_A\rangle$. The magnetotransport da… ▽ More We investigate the ultra-sharp jump in the isothermal magnetization and the resistivity in the polycrystalline $Sm_{0.5}(Ca_{0.5-y}Sr_{y})MnO_3$ $(y = 0, 0.1, 0.2, 0.25, 0.3, 0.5)$ compounds. The critical field $(H_{cr})$, required for the ultra-sharp jump, decreases with increase of `Sr' concentration, i.e. with increase of average A-site ionic radius $\langle r_A\rangle$. The magnetotransport data indicate that the phase separation increases with the increase of $\langle r_A\rangle$, i.e. with $y$. The dependency of $H_{cr}$ with magnetic field sweep rate reveals that the ultra-sharp jump from antiferromagnetic (AFM) state to the ferromagnetic (FM) state is of martensitic in nature. Our two-band double exchange model Hamiltonian calculations show that the `Sr' doping induces the ferromagnetic clusters in the antiferromagnetic insulating phase and in turn reduces the critical field. In the end we present a phenomenological picture obtained from our combined experimental and theoretical study. △ Less

Submitted 27 March, 2019; originally announced March 2019.

Designing multi-level resistance states for multi-bit storage using half doped manganites

Authors: Sanjib Banik, Kalipada Das, Kalpataru Pradhan, I. Das

Abstract: Designing nonvolatile multi-level resistive devices is the necessity of time to go beyond traditional one-bit storage systems, thus enhancing the storage density. Here, we explore the electronic phase competition scenario to design multi-level resistance states using a half doped CE-type charge ordered insulating bulk manganite, $Sm_{0.5}Ca_{0.25}Sr_{0.25}MnO_3$ (SCSMO). By introducing electronic… ▽ More Designing nonvolatile multi-level resistive devices is the necessity of time to go beyond traditional one-bit storage systems, thus enhancing the storage density. Here, we explore the electronic phase competition scenario to design multi-level resistance states using a half doped CE-type charge ordered insulating bulk manganite, $Sm_{0.5}Ca_{0.25}Sr_{0.25}MnO_3$ (SCSMO). By introducing electronic phase coexistence in a controllable manner in SCSMO, we show that the system can be stabilized into several metastable states, against thermal cycling, up to 62 K. As a result the magnetization (and the resistivity) remains unaltered during the thermal cycling. Monte Carlo calculations using two-band double exchange model, including super-exchange, electron-phonon coupling, and quenched disorder, show that the system freezes into a phase coexistence metastable state during the thermal cycling due to the chemical disorder in SCSMO. Using the obtained insights we outline a pathway by utilizing four reversible metastable resistance states to design a prototype multi-bit memory device. △ Less

Submitted 12 February, 2019; originally announced February 2019.

Comments: 5 figures, 5 supplementary figures

The effect of Sn intercalation on the superconducting properties of 2H-NbSe2

Authors: Subham Naik, Gopal K. Pradhan, Shwetha G. Bhat, Bhaskar Chandra Behera, P. S. Anil Kumar, Saroj L. Samal, D. Samal

Abstract: 2H-NbSe2 is known to be an archetype layered transitional metal dichalcogenide superconductor with a superconducting transition temperature of 7.3 K.In this article, we investigate the influence of Sn intercalation on superconducting properties of 2H-NbSe2. Sn being nonmagnetic and having no outer shell d-electrons unlike transition metals, one naively would presume that its effect on superconduct… ▽ More 2H-NbSe2 is known to be an archetype layered transitional metal dichalcogenide superconductor with a superconducting transition temperature of 7.3 K.In this article, we investigate the influence of Sn intercalation on superconducting properties of 2H-NbSe2. Sn being nonmagnetic and having no outer shell d-electrons unlike transition metals, one naively would presume that its effect on superconducting properties will be very marginal. However, our magnetic and transport studies reveal a significant reduction of both superconducting transition temperature and upper critical field [Tc and BC2 (0)] upon Sn intercalation. With a mere 4 mole% Sn intercalation, it is observed that Tc and BC2 (0) get suppressed by ~ 3.5 K and 3 T, respectively. Werthamer-Helfand-Hohenberg (WHH) analysis of magneto-transport data is performed to estimate BC2 (0). From the low temperature Raman scattering data in the normal phase of intercalated NbSe2, it is inferred that the suppression of superconductivity cannot be ascribed to strengthening of charge density wave (CDW)ordering. The effects such as electron-doping induced Fermi surface change and/or disorder scattering upon intercalation are speculated to be at play for the observed phenomena. △ Less

Submitted 22 August, 2018; originally announced August 2018.

Comments: 15 pages, 5 figures

Effect of Substrate Temperature on Structural and Magnetic Properties of c-axis Ori-ented Spinel Ferrite Ni0.65Zn0.35Fe2O4 (NZFO) Thin Films

Authors: Dhiren K. Pradhan, Shalini Kumari, Dillip K. Pradhan, Ashok Kumar, Ram S. Katiyar, R. E. Cohen

Abstract: Varying the substrate temperature changes structural and magnetic properties of spinel ferrite NZFO thin films. XRD of films grown at different temperature display only 004 reflections, without any secondary peaks, showing growth orientation along the c axis. We find an increase in crystalline quality of these thin films with the rise of substrate temperature. The surface topography of the thin fi… ▽ More Varying the substrate temperature changes structural and magnetic properties of spinel ferrite NZFO thin films. XRD of films grown at different temperature display only 004 reflections, without any secondary peaks, showing growth orientation along the c axis. We find an increase in crystalline quality of these thin films with the rise of substrate temperature. The surface topography of the thin films grown on various growth temperatures conditions reveal that these films are smooth with low roughness, however the thin films grown at 800 C exhibit lowest average and rms roughness among all thin films. We find iron and nickel to be more oxidized i,e greater Fe and Ni content in films grown and annealed at 700 C and 800 C, compared to those grown at lower temperatures. The magnetic moment is observed to increase with an increase of substrate temperature and all thin films possess high saturation magnetization and low coercive field at room temperature. Films grown at 800 C exhibit a ferrimagnetic paramagnetic phase transition well above room temperature. The observed large magnetizations with soft magnetic behavior in NZFO thin films above room temperature suggest potential application in memory, spintronics, and multifunctional devices. △ Less

Submitted 28 June, 2018; v1 submitted 6 April, 2018; originally announced April 2018.

Comments: 12 pages, 5 figures

Collapse of ferromagnetism with Ti doping in Sm$_{0.55}$Sr$_{0.45}$MnO$_3$: A combined experimental and theoretical study

Authors: P. Sarkar, N. Khan, K. Pradhan, P. Mandal

Abstract: We have investigated the effect of Ti doping on the transport properties coupled with the magnetic ones in Sm$_{0.55}$Sr$_{0.45}$Mn$_{1-η}$Ti$_η$O$_3$ ($0 \leq η\leq 0.04$). The parent compound, Sm$_{0.55}$Sr$_{0.45}$MnO$_3$, exhibits a first-order paramagnetic-insulator to ferromagnetic-metal transition just below $T_{\rm c}$ = 128 K. With substitution of Ti at Mn sites ($B$-site), $T_{\rm c}$ de… ▽ More We have investigated the effect of Ti doping on the transport properties coupled with the magnetic ones in Sm$_{0.55}$Sr$_{0.45}$Mn$_{1-η}$Ti$_η$O$_3$ ($0 \leq η\leq 0.04$). The parent compound, Sm$_{0.55}$Sr$_{0.45}$MnO$_3$, exhibits a first-order paramagnetic-insulator to ferromagnetic-metal transition just below $T_{\rm c}$ = 128 K. With substitution of Ti at Mn sites ($B$-site), $T_{\rm c}$ decreases approximately linearly at the rate of 22 K$\%^{-1}$ while the width of thermal hysteresis in magnetization and resistivity increases almost in an exponential fashion. The most spectacular effect has been observed for the composition $η$=0.03, where a magnetic field of only 1 T yields a huge magnetoresistance, $1.2 \times 10^7$ $\%$ at $T_c\approx$ 63 K. With increasing magnetic field, the transition shifts towards higher temperature, and the first-order nature of the transition gets weakened and eventually becomes crossover above a critical field ($H_{cr}$) which increases with Ti doping. For Ti doping above 0.03, the system remains insulting without any ferromagnetic ordering down to 2 K. The Monte-Carlo calculations based on a two-band double exchange model show that the decrease of $T_{\rm c}$ with Ti doping is associated with the increase of the lattice distortions around the doped Ti ions. △ Less

Submitted 28 March, 2018; originally announced March 2018.

Comments: 15 pages, 6 figures

Journal ref: Phys. Rev. B 98, 014422 (2018)

Infrared metamaterials by RF sputtered ZnO/Al:ZnO multilayers

Authors: Kevin C. Santiago, Rajeh Mundle, Curtis White, Messaoud Bahoura, Aswini K. Pradhan

Abstract: Hyperbolic metamaterials create artificial optical anisotropy using metallic wires suspended in a dielectric medium, or alternating layers of a metal and dielectric. Here we fabricated ZnO/Al:ZnO (AZO) multilayers by the RF magnetron sputtering deposition technique. Our fabricated multilayers satisfy the conditions required for a type I hyperbolic metamaterial. The optical response of individual A… ▽ More Hyperbolic metamaterials create artificial optical anisotropy using metallic wires suspended in a dielectric medium, or alternating layers of a metal and dielectric. Here we fabricated ZnO/Al:ZnO (AZO) multilayers by the RF magnetron sputtering deposition technique. Our fabricated multilayers satisfy the conditions required for a type I hyperbolic metamaterial. The optical response of individual AZO and ZnO films, as well as the multilayered film were investigated via angular transmittance and spectroscopic ellipsometry measurements. The optical response of the multilayered system is predicted using the nonlocal-corrected Effective Medium Approximation (EMA). The spectroscopic ellipsometry data of the multilayered system was modeled using a uniaxial material model and EMA model. Both theoretical and experimental studies validate the multilayers undergo a hyperbolic transition at a wavelength of 2.2 μm. △ Less

Submitted 24 January, 2018; originally announced January 2018.

Nanoclustering phase competition induces the resistivity hump in colossal magnetoresistive manganites

Authors: Kalpataru Pradhan, Seiji Yunoki

Abstract: Using a two-band double-exchange model with Jahn-Teller lattice distortions and super-exchange interactions, supplemented by quenched disorder, at electron density $n=0.65$, we explicitly demonstrate the coexistence of the $n$ = 1/2-type ($π, π$) charge-ordered and the ferromagnetic nanoclusters above the ferromagnetic transition temperature $T_{\rm c}$ in colossal magnetoresistive (CMR) manganite… ▽ More Using a two-band double-exchange model with Jahn-Teller lattice distortions and super-exchange interactions, supplemented by quenched disorder, at electron density $n=0.65$, we explicitly demonstrate the coexistence of the $n$ = 1/2-type ($π, π$) charge-ordered and the ferromagnetic nanoclusters above the ferromagnetic transition temperature $T_{\rm c}$ in colossal magnetoresistive (CMR) manganites. The resistivity increases due to the enhancement of the volume fraction of the charge-ordered and the ferromagnetic nanoclusters with decreasing the temperature down to $T_{\rm c}$. The ferromagnetic nanoclusters start to grow and merge, and the volume fraction of the charge-ordered nanoclusters decreases below $T_{\rm c}$, leading to the sharp drop in the resistivity. By applying a small external magnetic field $h$, we show that the resistivity above $T_{\rm c}$ increases, as compared with the case when $h=0$, a fact which further confirms the coexistence of the charge-ordered and the ferromagnetic nanoclusters. In addition, we show that the volume fraction of the charge-ordered nanoclusters decreases with increasing the bandwidth and consequently the resistivity hump diminishes for large bandwidth manganites, in good qualitative agreement with experiments. The obtained insights from our calculations provide a complete pathway to understand the phase competition in CMR manganites. △ Less

Submitted 28 November, 2017; originally announced November 2017.

Comments: 6 pages, 6 figures

Journal ref: Phys. Rev. B 96, 214416 (2017)

Huge magnetoresistance and ultra-sharp metamagnetic transition in polycrystalline ${Sm_{0.5}Ca_{0.25}Sr_{0.25}MnO_3}$

Authors: Sanjib Banik, Kalipada Das, Tapas Paramanik, N. P. Lalla, Biswarup Satpati, Kalpataru Pradhan, I. Das

Abstract: Large magnetoresistive materials are of immense interest for a number of spintronic applications by developing high density magnetic memory devices, magnetic sensors and magnetic switches. Colossal magnetoresistance, for which resistivity changes several order of magnitude (${\sim10^4 \%}$) in an external magnetic field, occurs mainly in phase separated oxide materials, namely manganites, due to t… ▽ More Large magnetoresistive materials are of immense interest for a number of spintronic applications by developing high density magnetic memory devices, magnetic sensors and magnetic switches. Colossal magnetoresistance, for which resistivity changes several order of magnitude (${\sim10^4 \%}$) in an external magnetic field, occurs mainly in phase separated oxide materials, namely manganites, due to the phase competition between the ferromagnetic metallic and the antiferromagnetic insulating regions. Can one further enhance the magnetoresistance by tuning the volume fraction of the two phases? In this work, we report a huge colossal magnetoresistance along with the ultra-sharp metamagnetic transition in half doped ${Sm_{0.5}Ca_{0.25}Sr_{0.25}MnO_3}$ manganite compound by suitably tuning the volume fraction of the competing phases. The obtained magnetoresistance value at 10 K is as large as $\sim10^{13}\%$ in a 30 kOe external magnetic field and $\sim10^{15}\%$ in 90 kOe external magnetic field and is several orders of magnitude higher than any other observed magnetoresistance value reported so far. Using model Hamiltonian calculations we have shown that the inhomogeneous disorder, deduced from tunneling electron microscopy, suppresses the CE-type phase and seeds the ferromagnetic metal in an external magnetic field. △ Less

Submitted 21 June, 2018; v1 submitted 9 October, 2017; originally announced October 2017.

Comments: NPG Asia Materials (accepted on 13th June 2018)