Showing 1–8 of 8 results for author: Pradhan, G K

Multi Moire Networks in Engineered Lateral Hetero-Bilayers: Programmable Phononic Reconfiguration and Second Harmonic Generation

Authors: Suman Kumar Chakraborty, Frederico B. Sousa, Chakradhar Sahoo, Indrajeet Dhananjay Prasad, Shneha Biswas, Purbasha Ray, Biswajeet Nayak, Rafael Rojas, Baisali Kundu, Alfred J. H. Jones, Jill A. Miwa, Søren Ulstrup, Sudipta Dutta, Santosh Kumar, Leandro M. Malard, Gopal K. Pradhan, Prasana Kumar Sahoo

Abstract: Moire engineering in two-dimensional transition metal dichalcogenides enables access to correlated quantum phenomena. Realizing such effects demands simultaneous control over twist angle and material composition to modulate phonons, excitons, and their interactions. However, most studies rely on exfoliated flakes, limiting scalability and systematic exploration. Here, we demonstrate a scalable mul… ▽ More Moire engineering in two-dimensional transition metal dichalcogenides enables access to correlated quantum phenomena. Realizing such effects demands simultaneous control over twist angle and material composition to modulate phonons, excitons, and their interactions. However, most studies rely on exfoliated flakes, limiting scalability and systematic exploration. Here, we demonstrate a scalable multi-moire network by vertically stacking CVD-grown monolayer lateral heterostructures. Signatures of moire non-rigidity, including phonon frequency softening, linewidth broadening, and strain localization, are attributed to two lattice relaxation modes; rotational reconstruction and volumetric dilation. Micro-angle-resolved photoemission spectroscopy reveals that interfacial orbital interactions modulate interlayer coupling. At aligned angles, molybdenum diselenides exhibit reduced valley polarization and Davydov splitting, indicating strain-induced symmetry breaking and chiral phonon effects. Notably, SHG modulation was obderved with variation in twist angle due to lower coherence and band-offset-driven phase delay. First-principles calculations support these findings. This work provides a route to programmable, scalable multi-moire platforms for opto-straintronics, quantum sensing, and on-chip photonics. △ Less

Submitted 2 May, 2025; originally announced May 2025.

Thermally-driven Multilevel Non-volatile Memory with Monolayer MoS2 for Neuro-inspired Artificial Learning

Authors: Sameer Kumar Mallik, Roshan Padhan, Mousam Charan Sahu, Suman Roy, Gopal K Pradhan, Prasana Kumar Sahoo, Saroj Prasad Dash, Satyaprakash Sahoo

Abstract: The demands of modern electronic components require advanced computing platforms for efficient information processing to realize in-memory operations with a high density of data storage capabilities towards developing alternatives to von Neumann architectures. Herein, we demonstrate the multifunctionality of monolayer MoS2 mem-transistors which can be used as a high-geared intrinsic transistor at… ▽ More The demands of modern electronic components require advanced computing platforms for efficient information processing to realize in-memory operations with a high density of data storage capabilities towards developing alternatives to von Neumann architectures. Herein, we demonstrate the multifunctionality of monolayer MoS2 mem-transistors which can be used as a high-geared intrinsic transistor at room temperature; however, at a high temperature (>350 K), they exhibit synaptic multi-level memory operations. The temperature-dependent memory mechanism is governed by interfacial physics, which solely depends on the gate field modulated ion dynamics and charge transfer at the MoS2/dielectric interface. We have proposed a non-volatile memory application using a single FET device where thermal energy can be ventured to aid the memory functions with multi-level (3-bit) storage capabilities. Furthermore, our devices exhibit linear and symmetry in conductance weight updates when subjected to electrical potentiation and depression. This feature has enabled us to attain a high classification accuracy while training and testing the Modified National Institute of Standards and Technology datasets through artificial neural network simulation. This work paves the way for new avenues in 2D semiconductors toward reliable data processing and storage with high-packing density arrays for brain-inspired artificial learning. △ Less

Submitted 3 May, 2023; originally announced May 2023.

Journal ref: ACS Applied Materials & Interfaces 2023

Phonon-based partition of (ZnSe-like) semiconductor mixed crystals on approach to their pressure-induced structural transition

Authors: M. B. Shoker, O. Pagès, V. J. B. Torres, A. Polian, J. -P. Itié, G. K. Pradhan, C. Narayana, M. N. Rao, R. Rao, C. Gardiennet, G. Kervern, K. Strzałkowski, F. Firszt

Abstract: The generic 1-bond:2-mode percolation type Raman signal inherent to the short bond of common (A,B)C semiconductor mixed crystals with zincblende (cubic) structure is exploited as a sensitive mesoscope to explore how various ZnSe-based systems engage their pressure-induced structural transition (to rock-salt) at the sub-macroscopic scale with a focus on ZnCdSe. The Raman doublet, that distinguishes… ▽ More The generic 1-bond:2-mode percolation type Raman signal inherent to the short bond of common (A,B)C semiconductor mixed crystals with zincblende (cubic) structure is exploited as a sensitive mesoscope to explore how various ZnSe-based systems engage their pressure-induced structural transition (to rock-salt) at the sub-macroscopic scale with a focus on ZnCdSe. The Raman doublet, that distinguishes between the AC- and BC-like environments of the short bond, is reactive to pressure: either it closes (ZnBeSe, ZnSeS) or it opens (ZnCdSe), depending on the hardening rates of the two environments under pressure. A partition of II-VI and III-V mixed crystals is accordingly outlined. Of special interest is the closure case, in which the system resonantly stabilizes ante transition at its exceptional point corresponding to a virtual decoupling, by overdamping, of the two oscillators forming the Raman doublet. At this limit, the chain-connected bonds of the short species (taken as the minor one) freeze along the chain into a rigid backbone. This reveals a capacity behind alloying to reduce the thermal conductivity. △ Less

Submitted 17 August, 2020; originally announced August 2020.

Thermal conductivity of free-standing silicon nanowire using Raman spectroscopy

Authors: Sandhyarani Sahoo, Sameer Kumar Mallik, Mousam Charan Sahu, Anjana Joseph, Bibhudutta Rout, Gopal K. Pradhan, Satyaprakash Sahoo

Abstract: Low dimensional systems, nanowires, in particular, have exhibited excellent optical and electronic properties. Understanding the thermal properties in semiconductor nanowires is very important for their applications in their electronic devices. In the present study, the thermal conductivity of a freestanding silicon nanowire (NW) is estimated employing the Raman spectroscopy. The advantage of this… ▽ More Low dimensional systems, nanowires, in particular, have exhibited excellent optical and electronic properties. Understanding the thermal properties in semiconductor nanowires is very important for their applications in their electronic devices. In the present study, the thermal conductivity of a freestanding silicon nanowire (NW) is estimated employing the Raman spectroscopy. The advantage of this technique is that the light source (laser) can be used both as heating and excitation source. The variations of the first-order Raman peak position of the freestanding silicon NW with respect to temperature and laser power are carried out. A critical analysis of effective laser power absorbed by exposed silicon NW, the detailed Raman study along with the concept of longitudinal heat distribution in silicon NW, the thermal conductivity of the freestanding silicon NW of 112 nm diameter is estimated to be ~53 W/m.K. △ Less

Submitted 26 February, 2020; originally announced February 2020.

The effect of Sn intercalation on the superconducting properties of 2H-NbSe2

Authors: Subham Naik, Gopal K. Pradhan, Shwetha G. Bhat, Bhaskar Chandra Behera, P. S. Anil Kumar, Saroj L. Samal, D. Samal

Abstract: 2H-NbSe2 is known to be an archetype layered transitional metal dichalcogenide superconductor with a superconducting transition temperature of 7.3 K.In this article, we investigate the influence of Sn intercalation on superconducting properties of 2H-NbSe2. Sn being nonmagnetic and having no outer shell d-electrons unlike transition metals, one naively would presume that its effect on superconduct… ▽ More 2H-NbSe2 is known to be an archetype layered transitional metal dichalcogenide superconductor with a superconducting transition temperature of 7.3 K.In this article, we investigate the influence of Sn intercalation on superconducting properties of 2H-NbSe2. Sn being nonmagnetic and having no outer shell d-electrons unlike transition metals, one naively would presume that its effect on superconducting properties will be very marginal. However, our magnetic and transport studies reveal a significant reduction of both superconducting transition temperature and upper critical field [Tc and BC2 (0)] upon Sn intercalation. With a mere 4 mole% Sn intercalation, it is observed that Tc and BC2 (0) get suppressed by ~ 3.5 K and 3 T, respectively. Werthamer-Helfand-Hohenberg (WHH) analysis of magneto-transport data is performed to estimate BC2 (0). From the low temperature Raman scattering data in the normal phase of intercalated NbSe2, it is inferred that the suppression of superconductivity cannot be ascribed to strengthening of charge density wave (CDW)ordering. The effects such as electron-doping induced Fermi surface change and/or disorder scattering upon intercalation are speculated to be at play for the observed phenomena. △ Less

Submitted 22 August, 2018; originally announced August 2018.

Comments: 15 pages, 5 figures

Raman signatures of pressure induced electronic topological and structural transitions in Bi2Te3

Authors: Gopal K. Pradhan, Achintya Bera, Pradeep Kumar, D. V. S. Muthu, A. K. Sood

Abstract: We report Raman signatures of electronic topological transition (ETT) at 3.6 GPa and rhombohedral (α-Bi2Te3) to monoclinic (β-Bi2Te3) structural transition at ~ 8 GPa. At the onset of ETT, a new Raman mode appears near 107 cm-1 which is dispersionless with pressure. The structural transition at ~ 8 GPa is marked by a change in pressure derivative of A1g and Eg mode frequencies as well as by appear… ▽ More We report Raman signatures of electronic topological transition (ETT) at 3.6 GPa and rhombohedral (α-Bi2Te3) to monoclinic (β-Bi2Te3) structural transition at ~ 8 GPa. At the onset of ETT, a new Raman mode appears near 107 cm-1 which is dispersionless with pressure. The structural transition at ~ 8 GPa is marked by a change in pressure derivative of A1g and Eg mode frequencies as well as by appearance of new modes near 115 cm-1and 135 cm-1. The mode Grüneisen parameters are determined in both the α and β-phases. △ Less

Submitted 27 November, 2011; originally announced November 2011.

Elastic and structural instability of cubic Sn3N4 and C3N4 under pressure

Authors: Gopal K. Pradhan, Anil Kumar, Umesh V. Waghmare, Sudip K. Deb, Chandrabhas Narayana

Abstract: We use in-situ high pressure angle dispersive x-ray diffraction measurements to determine the equation of state of cubic tin nitride Sn3N4 under pressure up to about 26 GPa. While we find no evidence for any structural phase transition, our estimate of the bulk modulus (B) is 145 GPa, much lower than the earlier theoretical estimates and that of other group IV-nitrides. We corroborate and underst… ▽ More We use in-situ high pressure angle dispersive x-ray diffraction measurements to determine the equation of state of cubic tin nitride Sn3N4 under pressure up to about 26 GPa. While we find no evidence for any structural phase transition, our estimate of the bulk modulus (B) is 145 GPa, much lower than the earlier theoretical estimates and that of other group IV-nitrides. We corroborate and understand these results with complementary first-principles analysis of structural, elastic and vibrational properties of group IV-nitrides, and predict a structural transition of Sn3N4 at a higher pressure of 88 GPa compared to earlier predictions of 40 GPa. Our comparative analysis of cubic nitrides shows that bulk modulus of cubic C3N4 is the highest (379 GPa) while it is structurally unstable and should not exist at ambient conditions. △ Less

Submitted 11 March, 2010; originally announced March 2010.

Comments: 5 pages, 4 figures

Journal ref: Physical Review B 82, 144112 (2010)

Pressure-induced phonon-freezing in the ZnBeSe alloy: a study via the percolation mesoscope

Authors: Gopal K. Pradhan, Chandrabhas Narayana, Olivier Pages, Abedalhasan Breidi, Jihane Souhabi, Andrei Viktor Postnikov, Fouad El Haj Hassan, Sudip K. Deb, Franciszek Firszt, Wojtek Paszkowicz, Abhay Shukla

Abstract: We use the 1-bond -> 2-phonon percolation doublet of zincblende alloys as a mesoscope for an unusual insight into their phonon behavior under pressure. We focus on (Zn,Be)Se and show by Raman scattering that the original Be-Se doublet at ambient pressure, of the stretching-bending type, turns into a pure-bending singlet at the approach of the high-pressure ZnSe-like rocksalt phase, an unnatural… ▽ More We use the 1-bond -> 2-phonon percolation doublet of zincblende alloys as a mesoscope for an unusual insight into their phonon behavior under pressure. We focus on (Zn,Be)Se and show by Raman scattering that the original Be-Se doublet at ambient pressure, of the stretching-bending type, turns into a pure-bending singlet at the approach of the high-pressure ZnSe-like rocksalt phase, an unnatural one for the Be-Se bonds. The freezing of the Be-Se stretching mode is discussed within the scope of the percolation model (mesoscopic scale), with ab initio calculations in support (microscopic scale). △ Less

Submitted 28 October, 2009; v1 submitted 27 October, 2009; originally announced October 2009.

Comments: 11 pages, 3 figures

Journal ref: Phys. Rev. B 81, 115207 (2010)