Showing 1–15 of 15 results for author: Pradhan, D

Kilobyte-Scale, Selector-Free, Temperature-Hard AlScN Ferroelectric Diode Crossbar Arrays

Authors: Zirun Han, Chao-Chuan Chen, Dhiren K. Pradhan, David C. Moore, Ravali Gudavalli, Xindi Yang, Kwan-Ho Kim, Hyunmin Cho, Zachary Anderson, Spencer Ware, Harsh Yellai, W. Joshua Kennedy, Nicholas R. Glavin, Roy H. Olsson III, Deep Jariwala

Abstract: We report the fabrication and characterization of kilobyte-scale, selector-free, ferroelectric (FE) diode crossbar memory arrays based on aluminum scandium nitride (AlScN). Utilizing a fully CMOS back-end-of-line (BEOL) compatible process, we fabricated 2-kilobyte (128 $\times$ 128) arrays with device diameters down to 5 $μ$m, achieving memory densities up to 2500 bits/mm$^2$. Large-scale electric… ▽ More We report the fabrication and characterization of kilobyte-scale, selector-free, ferroelectric (FE) diode crossbar memory arrays based on aluminum scandium nitride (AlScN). Utilizing a fully CMOS back-end-of-line (BEOL) compatible process, we fabricated 2-kilobyte (128 $\times$ 128) arrays with device diameters down to 5 $μ$m, achieving memory densities up to 2500 bits/mm$^2$. Large-scale electrical characterization across 1000 randomly selected devices reveals a yield rate of 95.2%, a tight switching voltage distribution with a coefficient of variation (CV) of 0.003, and consistent on/off ratios of around 10 with a CV of 0.27. We demonstrate selector-free read and program operations of the array, enabled by the high nonlinearity, rectification, and uniform switching behavior of the FE diodes. Furthermore, we verified consistent ferroelectric switching during array operation at temperatures up to 600 $^\circ$C. Our results highlight the potential of AlScN FE diode arrays for energy-efficient, high-density memory applications and lay the groundwork for future integration in compute-near-memory, high-temperature memory, and analog compute-in-memory systems. △ Less

Submitted 5 June, 2025; originally announced June 2025.

Leakage Suppression Across Temperature in Al1-xScxN Thin Film Ferroelectric Capacitors through Boron Incorporation

Authors: Pedram Yousefian, Xiaolei Tong, Jonathan Tan, Dhiren K. Pradhan, Deep Jariwala, Roy H. Olsson III

Abstract: This paper presents high-temperature ferroelectric characterization of 40~nm Al$_{1-x-y}$B$_x$Sc$_y$N (AlBScN) thin film capacitors grown by co-sputtering Al$_{0.89}$B$_{0.11}$ and Sc targets onto Pt(111)/Ti(002)/Si(100) substrates. Structural analysis confirmed a c-axis-oriented wurtzite structure with a low surface roughness of 1.37~nm. Ferroelectric switching, characterized by positive-up-negat… ▽ More This paper presents high-temperature ferroelectric characterization of 40~nm Al$_{1-x-y}$B$_x$Sc$_y$N (AlBScN) thin film capacitors grown by co-sputtering Al$_{0.89}$B$_{0.11}$ and Sc targets onto Pt(111)/Ti(002)/Si(100) substrates. Structural analysis confirmed a c-axis-oriented wurtzite structure with a low surface roughness of 1.37~nm. Ferroelectric switching, characterized by positive-up-negative-down (PUND) measurements up to 600~$^\circ$C, exhibited a linear decrease in coercive fields from 6.2~MV/cm at room temperature to 4.2~MV/cm at 600~$^\circ$C, while remanent polarization remained stable with temperature. Direct current I-V measurements highlight a significant suppression of leakage currents, over two orders of magnitude lower compared to AlScN capacitors fabricated under similar conditions. These results position AlBScN thin films as strong candidates for ferroelectric applications in extreme environments. △ Less

Submitted 2 May, 2025; originally announced May 2025.

Unraveling the electronic, vibrational, thermodynamic, optical and piezoelectric properties of LiNbO$_3$, LiTaO$_3$ and Li$_2$NbTaO$_6$ from first-principles calculations

Authors: Debidutta Pradhan, Rojalin Swain, Souvagya Kumar Biswal, Jagadish Kumar

Abstract: We have investigated the electronic, vibrational, optical, thermal and piezoelectric properties of LiNbO$_3$, LiTaO$_3$ and Li$_2$NbTaO$_6$ using the first-principles calculation based on the density functional theory. It also shows structural phase transition below $T_c$ due to ionic displacement that may alter the properties of material. We have checked the structural stability by calculating th… ▽ More We have investigated the electronic, vibrational, optical, thermal and piezoelectric properties of LiNbO$_3$, LiTaO$_3$ and Li$_2$NbTaO$_6$ using the first-principles calculation based on the density functional theory. It also shows structural phase transition below $T_c$ due to ionic displacement that may alter the properties of material. We have checked the structural stability by calculating the tolerance factor and formation energy before proceeding to the further calculations. The ground state electronic band structures and corresponding density of states show its semiconducting nature with a band gap range of 3.5-3.7 eV. Optical properties such as dielectric function, absorption coefficient, optical conductivity, refractive index, absorbance and reflectance are calculated using time-dependent density functional theory. Furthermore, the piezoelectric properties and Born effective charges were analyzed to find the correlation between them. In these materials, the distortion induced by the small ionic radius of Li$^{+}$ coupled with strong covalent interaction between transition metal and oxygen leads to high spontaneous polarization which can enhance both piezoelectric and optical properties. △ Less

Submitted 26 March, 2025; originally announced March 2025.

Comments: 8 pages, 7 figures

Observation of giant remnant polarization in ultrathin AlScN at cryogenic temperatures

Authors: Seunguk Song, Dhiren K. Pradhan, Zekun Hu, Yinuo Zhang, Rachael N. Keneipp, Michael A. Susner, Pijush Bhattacharya, Marija Drndić, Roy H. Olsson III, Deep Jariwala

Abstract: The discovery of wurtzite ferroelectrics opens new frontiers in polar materials, yet their behavior at cryogenic temperatures remains unexplored. Here, we reveal unprecedented ferroelectric properties in ultrathin (10 nm) Al$_{0.68}$Sc$_{0.32}$N (AlScN) at cryogenic temperatures where the properties are fundamentally distinct from those of conventional oxide ferroelectrics. At 12 K, we demonstrate… ▽ More The discovery of wurtzite ferroelectrics opens new frontiers in polar materials, yet their behavior at cryogenic temperatures remains unexplored. Here, we reveal unprecedented ferroelectric properties in ultrathin (10 nm) Al$_{0.68}$Sc$_{0.32}$N (AlScN) at cryogenic temperatures where the properties are fundamentally distinct from those of conventional oxide ferroelectrics. At 12 K, we demonstrate a giant remnant polarization exceeding 250 $μ$C/cm$^2$ -- more than twice that of any known ferroelectric -- driven by an enhanced c/a ratio in the wurtzite structure. Our devices sustain remarkably high electric fields (~13 MV/cm) while maintaining reliable switching, achieving over 104 polarization reversal cycles at 12 K. Critically, this breakdown field strength approaches that of passive dielectric materials while maintaining ferroelectric functionality. The extraordinary polarization enhancement and high-field stability at cryogenic temperatures contrasts sharply with oxide ferroelectrics, establishing wurtzite ferroelectrics as a distinct class of polar materials with implications spanning fundamental physics to cryogenic non-volatile memory and quantum technologies. △ Less

Submitted 25 March, 2025; originally announced March 2025.

Comments: 27 pages, 5 figures, 5 supplementary figures

Structural, electronic, vibrational, optical, piezoelectric, thermal and thermoelectric properties of BCZT from first-principles calculations

Authors: Debidutta Pradhan, Jagadish Kumar

Abstract: Perovskite material such as BCZT (Ba$_{0.875}$Ca$_{0.125}$(Zr$_{0.125}$Ti$_{0.875}$)O$_{3}$) is well known for its high value of piezoceramic properties and Curie temperature which has potential applications in sensors, actuators, optoelectronic and thermoelectric devices. Based on its composition and physical parameters such as pressure and temperature, experimentally, BCZT shows different crysta… ▽ More Perovskite material such as BCZT (Ba$_{0.875}$Ca$_{0.125}$(Zr$_{0.125}$Ti$_{0.875}$)O$_{3}$) is well known for its high value of piezoceramic properties and Curie temperature which has potential applications in sensors, actuators, optoelectronic and thermoelectric devices. Based on its composition and physical parameters such as pressure and temperature, experimentally, BCZT shows different crystal structures (rhombohedral, tetragonal and orthorhombic) with multiferroic properties. Here, we have designed these materials by comparing experimental stoichiometry and evaluated their stability by calculating the tolerance factor, formation energy, and cohesive energy. The structural, electronic and vibrational properties of BCZT are explored using generalized gradient approximation (GGA) within the framework of density functional theory. We have also shown variation of piezoelectric and optical properties through multiple phases using time dependent density functional theory. The electronic band gap, optical response in the visible light range, as well as piezoelectric, electrical, thermal, and thermoelectric properties, demonstrate excellent characteristics, making this material a promising lead-free ferroelectric candidate for various energy harvesting applications. Boltzmann transport theory is used for the calculation of Seebeck coefficient, electron thermal conductivity, and electrical conductivity to estimate the power factor and figure of merit which represents the efficiency of the material. The high values at the Fermi level suggest that these materials are well-suited for future device applications. △ Less

Submitted 26 March, 2025; v1 submitted 18 March, 2025; originally announced March 2025.

Comments: 15 pages, 12 figures

Harnessing Layer-Controlled Two-dimensional Semiconductors for Photoelectrochemical Energy Storage via Quantum Capacitance and Band Nesting

Authors: Praveen Kumar, Tushar Waghmare, Sudhir Kumar, Rajdeep Banerjee, Suman Kumar Chakraborty, Subrata Ghosh, Dipak Kumar Goswami, Sankha Mukherjee, Debabrata Pradhan, Prasana Kumar Sahoo

Abstract: Two-dimensional (2D) transition metal dichalcogenides like molybdenum diselenide (MoSe$_2$) have shown great potential in optoelectronics and energy storage due to their layer-dependent bandgap. However, producing high-quality 2D MoSe$_2$ layers in a scalable and controlled manner remains challenging. Traditional methods, such as hydrothermal and liquid-phase exfoliation, lack precision and unders… ▽ More Two-dimensional (2D) transition metal dichalcogenides like molybdenum diselenide (MoSe$_2$) have shown great potential in optoelectronics and energy storage due to their layer-dependent bandgap. However, producing high-quality 2D MoSe$_2$ layers in a scalable and controlled manner remains challenging. Traditional methods, such as hydrothermal and liquid-phase exfoliation, lack precision and understanding at the nanoscale, limiting further applications. Atmospheric pressure chemical vapor deposition (APCVD) offers a scalable solution for growing high-quality, large-area, layer-controlled 2D MoSe$_2$. Despite this, the photoelectrochemical performance of APCVD-grown 2D MoSe$_2$, particularly in energy storage, has not been extensively explored. This study addresses this by examining MoSe$_2$'s layer-dependent quantum capacitance and photo-induced charge storage properties. Using a three-electrode setup in 0.5M H$_2$SO$_4$, we observed a layer-dependent increase in areal capacitance under both dark and illuminated conditions. A six-layer MoSe$_2$ film exhibited the highest capacitance, reaching $96 μ\mathrm{F/cm^2}$ in the dark and $115 μ\mathrm{F/cm^2}$ under illumination at a current density of $5 μ\mathrm{A/cm^2}$. Density Functional Theory (DFT) and Many-Body Perturbation Theory calculations reveal that Van Hove singularities and band nesting significantly enhance optical absorption and quantum capacitance. These results highlight APCVD-grown 2D MoSe$_2$'s potential as light-responsive, high-performance energy storage electrodes, paving the way for innovative energy storage systems. △ Less

Submitted 27 February, 2025; originally announced February 2025.

Comments: 28 pages, 6 figures (Main Manuscript) 8 figures (Supporting Information)

Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 °C

Authors: Yunfei He, David C. Moore, Yubo Wang, Spencer Ware, Sizhe Ma, Dhiren K. Pradhan, Zekun Hu, Xingyu Du, W. Joshua Kennedy, Nicholas R. Glavin, Roy H. Olsson III, Deep Jariwala

Abstract: Ferroelectric (Fe) materials-based devices show great promise for non-volatile memory applications, yet few demonstrate reliable operation at elevated temperatures. In this work, we demonstrate Ni/Al0.68Sc0.32N/4H-SiC metal-ferroelectric-semiconductor capacitors for high-temperature non-volatile memory applications. Our 30-nm thick ferroelectric Al0.68Sc0.32N film grown on SiC exhibits stable and… ▽ More Ferroelectric (Fe) materials-based devices show great promise for non-volatile memory applications, yet few demonstrate reliable operation at elevated temperatures. In this work, we demonstrate Ni/Al0.68Sc0.32N/4H-SiC metal-ferroelectric-semiconductor capacitors for high-temperature non-volatile memory applications. Our 30-nm thick ferroelectric Al0.68Sc0.32N film grown on SiC exhibits stable and robust ferroelectric switching up to 1000°C. The coercive field decreases linearly from -6.4/+11.9 MV cm-1 at room temperature to -3.1/+7.8 MV cm-1 at 800°C, further reducing to -2.5 MV cm-1 at 1000°C. At 600°C, the devices achieve remarkable reliability with ~2000 endurance cycles and over at least 100 hours of retention with negligible polarization loss. At 800°C, the devices retain data for at least 10,000 seconds and exceed 400 write cycles. Our results further highlight the potential for ferroelectric AlScN thin-films particularly when paired with SiC semiconductor substrates for high-temperature non-volatile memory. △ Less

Submitted 19 March, 2025; v1 submitted 25 November, 2024; originally announced November 2024.

Materials for High Temperature Digital Electronics

Authors: Dhiren K. Pradhan, David C. Moore, A. Matt Francis, Jacob Kupernik, W. Joshua Kennedy, Nicholas R. Glavin, Roy H. Olsson III, Deep Jariwala

Abstract: Silicon microelectronics, consisting of complementary metal oxide semiconductor (CMOS) technology, have changed nearly all aspects of human life from communication to transportation, entertainment, and healthcare. Despite the widespread and mainstream use, current silicon-based devices suffer significant reliability issues at temperatures exceeding 125 C. The emergent technological frontiers of sp… ▽ More Silicon microelectronics, consisting of complementary metal oxide semiconductor (CMOS) technology, have changed nearly all aspects of human life from communication to transportation, entertainment, and healthcare. Despite the widespread and mainstream use, current silicon-based devices suffer significant reliability issues at temperatures exceeding 125 C. The emergent technological frontiers of space exploration, geothermal energy harvesting, nuclear energy, unmanned avionic systems, and autonomous driving will rely on control systems, sensors, and communication devices which operate at temperatures as high as 500 C and beyond. At these extreme temperatures, active (heat exchanger, phase change cooling) or passive (fins and thermal interface materials) cooling strategies add significant mass and complication which is often infeasible. Thus, new material solutions beyond conventional silicon CMOS devices are necessary for high temperature, resilient electronic systems. Accomplishing this will require a united effort to explore development, integration, and ultimately manufacturing of non-silicon-based logic and memory technologies, non-traditional metals for interconnects, and ceramic packaging technology. △ Less

Submitted 21 August, 2024; v1 submitted 4 April, 2024; originally announced April 2024.

Comments: 6 Figures

Multi-State, Ultra-thin, BEOL-Compatible AlScN Ferroelectric Diodes

Authors: Kwan-Ho Kim, Zirun Han, Yinuo Zhang, Pariasadat Musavigharavi, Jeffrey Zheng, Dhiren K. Pradhan, Eric A. Stach, Roy H. Olsson III, Deep Jariwala

Abstract: The growth in data generation necessitates efficient data processing technologies to address the von Neumann bottleneck in conventional computer architecture. Memory-driven computing, which integrates non-volatile memory (NVM) devices in a 3D stack, is gaining attention, with CMOS back-end-of-line (BEOL) compatible ferroelectric (FE) diodes being ideal due to their two-terminal design and inherent… ▽ More The growth in data generation necessitates efficient data processing technologies to address the von Neumann bottleneck in conventional computer architecture. Memory-driven computing, which integrates non-volatile memory (NVM) devices in a 3D stack, is gaining attention, with CMOS back-end-of-line (BEOL) compatible ferroelectric (FE) diodes being ideal due to their two-terminal design and inherently selector-free nature, facilitating high-density crossbar arrays. Here, we demonstrate BEOL-compatible, high-performance FE-diodes scaled to 5, 10, and 20 nm FE Al0.72Sc0.28N/Al0.64Sc0.36N films. Through interlayer (IL) engineering, we show substantial improvements in the ON/OFF ratios (>166 times) and rectification ratios (>176 times) in these scaled devices. The superlative characteristics also enables 5-bit multi-state operation with a stable retention. We also experimentally and theoretically demonstrate the counterintuitive result that the inclusion of an IL can lead to a decrease in the ferroelectric switching voltage of the device. An in-depth analysis into the device transport mechanisms is performed, and our compact model aligns seamlessly with the experimental results. Our results suggest the possibility of using scaled AlxSc1-xN FE-diodes for high performance, low-power, embedded NVM. △ Less

Submitted 18 March, 2024; originally announced March 2024.

Design of acoustic diffraction plates for manipulating ultrasound in liquid Helium

Authors: Ayanesh Maiti, Dillip K. Pradhan, Ambarish Ghosh

Abstract: Many experiments in liquid Helium, such as the optical imaging of exploding electron bubbles, which enables research on individual particles under applied conditions, involve the usage of ultrasound generated by piezoelectric transducers. Previous studies either use planar transducers, which limits the maximum sound intensity and the spatial resolution, or curved transducers, which only allow obse… ▽ More Many experiments in liquid Helium, such as the optical imaging of exploding electron bubbles, which enables research on individual particles under applied conditions, involve the usage of ultrasound generated by piezoelectric transducers. Previous studies either use planar transducers, which limits the maximum sound intensity and the spatial resolution, or curved transducers, which only allow observations at fixed foci and make it difficult to apply uniform electric fields. In this paper, we introduce the usage of acoustic diffraction plates in liquid Helium to amplify ultrasonic pressure oscillations at an arbitrary set of primary foci coupled with large counts of secondary foci, all of which can be freely moved around by changing the ultrasound frequency. The frequency dependence also allows us to generate controlled Faraday instabilities at the surface, which enables the generation of multi-electron bubbles with desired parameters. △ Less

Submitted 11 March, 2022; originally announced March 2022.

Effect of Ba and Zr co-substitution on dielectric and magnetoelectric properties of BiFeO3 multiferroics

Authors: Satya Tripathy, Dhiren Pradhan, S Sen, BG Mishra, R Palai, JF Scott, R. S. Katiyar, Dillip pradhan

Abstract: We report the effect of Ba and Zr co-substitution on structural, dielectric, magnetic and magnetoelectric properties of BiFeO3 multiferroics. Polycrystalline nanoceramic samples of Bi1- xBaxFe1-yZryO3 have been synthesized by auto-combustion method. Rietveld refinement result of X-ray diffraction data indicate a contraction of unit cell volume with increase in x and y. Field emission scanning elec… ▽ More We report the effect of Ba and Zr co-substitution on structural, dielectric, magnetic and magnetoelectric properties of BiFeO3 multiferroics. Polycrystalline nanoceramic samples of Bi1- xBaxFe1-yZryO3 have been synthesized by auto-combustion method. Rietveld refinement result of X-ray diffraction data indicate a contraction of unit cell volume with increase in x and y. Field emission scanning electron micrographs show densely populated grains without any voids or defects with well-defined grain boundary and decrease in grain size with increasing x and y. The result of dielectric measurement display anomalies, which are amplified and the temperature at which dielectric anomalies observed decreases with increasing composition. A cross-over from anti-ferromagnetism to weak ferromagnetism has been observed at x = y = 0.1 with enhanced magnetization as compared to pure BiFeO3. Ferroelectric properties of the sample have been studied using PE loop measurement. Magneto-dielectric and magneto impedance spectroscopy reveal the existence of intrinsic magneto-electric coupling at room temperature. △ Less

Submitted 9 September, 2019; originally announced September 2019.

Comments: 32 Pages, 9 Figures

Effect of Substrate Temperature on Structural and Magnetic Properties of c-axis Ori-ented Spinel Ferrite Ni0.65Zn0.35Fe2O4 (NZFO) Thin Films

Authors: Dhiren K. Pradhan, Shalini Kumari, Dillip K. Pradhan, Ashok Kumar, Ram S. Katiyar, R. E. Cohen

Abstract: Varying the substrate temperature changes structural and magnetic properties of spinel ferrite NZFO thin films. XRD of films grown at different temperature display only 004 reflections, without any secondary peaks, showing growth orientation along the c axis. We find an increase in crystalline quality of these thin films with the rise of substrate temperature. The surface topography of the thin fi… ▽ More Varying the substrate temperature changes structural and magnetic properties of spinel ferrite NZFO thin films. XRD of films grown at different temperature display only 004 reflections, without any secondary peaks, showing growth orientation along the c axis. We find an increase in crystalline quality of these thin films with the rise of substrate temperature. The surface topography of the thin films grown on various growth temperatures conditions reveal that these films are smooth with low roughness, however the thin films grown at 800 C exhibit lowest average and rms roughness among all thin films. We find iron and nickel to be more oxidized i,e greater Fe and Ni content in films grown and annealed at 700 C and 800 C, compared to those grown at lower temperatures. The magnetic moment is observed to increase with an increase of substrate temperature and all thin films possess high saturation magnetization and low coercive field at room temperature. Films grown at 800 C exhibit a ferrimagnetic paramagnetic phase transition well above room temperature. The observed large magnetizations with soft magnetic behavior in NZFO thin films above room temperature suggest potential application in memory, spintronics, and multifunctional devices. △ Less

Submitted 28 June, 2018; v1 submitted 6 April, 2018; originally announced April 2018.

Comments: 12 pages, 5 figures

Effect of Temperature, Pressure and Aging time on the Relaxation Dynamics of Bi0.9Gd0.1Fe0.9Mn0.1O3 System: Direct Evidence of Glassy State and Pressure Induced Relaxor Behavior

Authors: Satya N. Tripathy, Zaneta Wojnarowska, Justyna Knapik, Arthur Chrobak, Dillip K. Pradhan, Sebastian Pawlus, Marian Paluch

Abstract: The fundamental aspects of relaxation dynamics in Bi0.9Gd0.1Fe0.9Mn0.1O3 multiferroic system have been reported. The study was carried out employing dielectric relaxation spectroscopy covering eight decades in frequency 0.01 to106 Hz and in a wide range of temperature 423 K to 153 K, hydrostatic pressure 0.1 MPa to 1765 MPa and aging time 0 s to 80000 s. The temperature dependent dielectric respon… ▽ More The fundamental aspects of relaxation dynamics in Bi0.9Gd0.1Fe0.9Mn0.1O3 multiferroic system have been reported. The study was carried out employing dielectric relaxation spectroscopy covering eight decades in frequency 0.01 to106 Hz and in a wide range of temperature 423 K to 153 K, hydrostatic pressure 0.1 MPa to 1765 MPa and aging time 0 s to 80000 s. The temperature dependent dielectric response indicates three relaxations processes in the dynamic window of modulus formalism. Variable range hopping model of small polarons manifests the bulk conduction mechanism. The bulk and grain boundary contributions have been estimated using impedance spectroscopy analysis and reveal that localized process dominates the relaxation. The direct evidence of glassy feature is established below 200 K by aging experiments. Our findings provide a potential connection between nearly constant loss features appearing below 200 K with fastest relaxation of magnitude 0.16 eV. We also discuss the time temperature superposition behavior using modulus scaling. A pressure driven normal ferroelectric to relaxor behavior is witnessed above a critical pressure as a result of relative competition between short range and long range forces. Our findings focus the role of high pressure as a fundamental bridge between normal ferroelectrics and relaxors. Intriguingly, there exists a direct connection between chemical pressure induced by substitution and external hydrostatic pressure. These findings have robust fundamental importance on theoretical elucidation of relaxation dynamics in perovskite systems. △ Less

Submitted 11 September, 2020; v1 submitted 11 May, 2016; originally announced May 2016.

Comments: 29 pages, 8 figures

Giant Magnetoelectric coupling in Single Phase Pb(Zr0.20Ti0.80)0.70Pd0.30O3-δ Multiferroics

Authors: Shalini Kumari, Dhiren K. Pradhan, Nora Ortega, Kallol Pradhan, Christopher DeVreugd, Gopalan Srinivasan, Ashok Kumar, J. F. Scott, Ram S. Katiyar

Abstract: During the last fifteen years, multiferroic (MF) research communities have been searching for an alternative room temperature MF material with large magnetoelectric (ME) coupling for possible applications in high density electronic components, low heat dissipation memory and logic devices. We have studied Pb(Zr0.20Ti0.80)0.70Pd0.30O3-δ (PZTP30) system with an unusually large (30%) palladium occupa… ▽ More During the last fifteen years, multiferroic (MF) research communities have been searching for an alternative room temperature MF material with large magnetoelectric (ME) coupling for possible applications in high density electronic components, low heat dissipation memory and logic devices. We have studied Pb(Zr0.20Ti0.80)0.70Pd0.30O3-δ (PZTP30) system with an unusually large (30%) palladium occupancy in B site of PZT. This material exhibited a giant ME coupling coefficient ~0.36 mV/cm.Oe. Interestingly, this is the first time any room temperature single phase compound that showed ME trends, and magnitude similar to those in the well established mechanical strain-mediated ferroelectric and ferromagnetic composites; the latter ones are already in the commercial stage as nT/pT magnetic field sensors due to their large ME values. The presence of Pd in PZTP30 has been confirmed by XPS and XRF studies and assigned with related binding energies of Pd+2 and Pd+4 ions as 336.37 eV, 342.9 eV, and 337.53 eV, 343.43 eV, respectively, which may be the origin of room temperature magnetism in Pd substituted PZT ceramics. A sharp first order ferroelectric phase transition was observed at ~569 K (+/-5 K) that is confirmed from dielectric, Raman, and thermal analysis. Both ferromagnetic and ferroelectric orderings with large ME coupling were found above room temperature, a significant step forward in the development of single phase ME material with enhanced functionalities. △ Less

Submitted 24 March, 2016; originally announced March 2016.

Comments: 37 pages, 9 figures

Anomalous behavior of acoustic phonon mode and central peak in Pb(Zn1/3Nb2/3)0.85Ti0.15O3 single crystal studied using Brillouin scattering

Authors: K. K. Mishra, V. Sivasubramanian, A. K. Arora, Dillip Pradhan

Abstract: Brillouin spectroscopic measurements have been carried out on relaxor ferroelectric Pb(Zn1/3Nb2/3)0.85Ti0.15O3 (PZN-PT) single crystal over the temperature range 300-585 K. The longitudinal acoustic phonon begins to soften below 650 K, which is attributed to the Burns temperature (TB). On the other hand, the line width of the longitudinal acoustic (LA) phonon mode exhibits a sharp Landau-Khalatnik… ▽ More Brillouin spectroscopic measurements have been carried out on relaxor ferroelectric Pb(Zn1/3Nb2/3)0.85Ti0.15O3 (PZN-PT) single crystal over the temperature range 300-585 K. The longitudinal acoustic phonon begins to soften below 650 K, which is attributed to the Burns temperature (TB). On the other hand, the line width of the longitudinal acoustic (LA) phonon mode exhibits a sharp Landau-Khalatnikov-like maximum and an accompanying anomaly in the LA mode frequency around 463 K, the tetragonal-cubic phase transition temperature (Ttc). In addition, a broad central peak, found below the characteristic intermediate temperature T* ~ 525 K, exhibits critical slowing down upon approaching Ttc indicating an order-disorder nature of the phase transition. The relaxation time of polar nano regions estimated from the broad central peak is found to be same as that obtained for LA phonon mode suggesting an electrostrictive coupling between strain and polarization fluctuations. The activation energy for the PNRs relaxation-dynamics is found to be ~236 meV. Polarized nature of the central peak suggests that the polar nano regions have the tendency to form long-range polar ordering. △ Less

Submitted 29 June, 2012; originally announced June 2012.