Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode
Authors:
Deep Jariwala,
Vinod K. Sangwan,
Chung-Chiang Wu,
Pradyumna L. Prabhumirashi,
Michael L. Geier,
Tobin J. Marks,
Lincoln J. Lauhon,
Mark C. Hersam
Abstract:
The p-n junction diode and field-effect transistor (FET) are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high performance field-effect devices have been achieved from monolayered materials and their heterost…
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The p-n junction diode and field-effect transistor (FET) are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high performance field-effect devices have been achieved from monolayered materials and their heterostructures, a p-n heterojunction diode derived from ultrathin materials is notably absent and constrains the fabrication of complex electronic and optoelectronic circuits. Here, we demonstrate a gate-tunable p-n heterojunction diode using semiconducting single-walled carbon nanotubes (s-SWCNTs) and single-layer molybdenum disulfide (SL-MoS2) as p-type and n-type semiconductors, respectively. The vertical stacking of these two direct band gap semiconductors forms a heterojunction with electrical characteristics that can be tuned with an applied gate bias to achieve a wide range of charge transport behavior ranging from insulating to rectifying with forward-to-reverse bias current ratios exceeding 10^4. This heterojunction diode also responds strongly to optical irradiation with an external quantum efficiency (EQE) of 25% and fast photoresponse < 15 μs. Since SWCNTs have a diverse range of electrical properties as a function of chirality, and since an increasing number of atomically thin 2D nanomaterials are being isolated, the gate-tunable p-n heterojunction concept presented here should be widely generalizable to realize diverse ultrathin, high-performance electronics and optoelectronics.
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Submitted 22 October, 2013;
originally announced October 2013.
Origin of room temperature ferromagnetism in homogeneous (In,Mn)As thin films
Authors:
A. J. Blattner,
P. L. Prabhumirashi,
V. P. Dravid,
B. W. Wessels
Abstract:
The microstructure of (In,Mn)As thin films grown using metalorganic vapor phase epitaxy (MOVPE) was investigated to determine the origin of room temperature ferromagnetism in these films. Transmission electron microscopy (TEM) based techniques were used to investigate phase purity and compositional homogeneity. Microanalysis of an In1-xMnxAs film with x = 0.01 and a Curie temperature of 330 K ex…
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The microstructure of (In,Mn)As thin films grown using metalorganic vapor phase epitaxy (MOVPE) was investigated to determine the origin of room temperature ferromagnetism in these films. Transmission electron microscopy (TEM) based techniques were used to investigate phase purity and compositional homogeneity. Microanalysis of an In1-xMnxAs film with x = 0.01 and a Curie temperature of 330 K exhibited a homogeneous distribution of Mn. High Mn concentration films with x = 0.20 exhibited MnAs precipitates within the (In,Mn)As matrix. The analysis indicates that room temperature ferromagnetic, single-phase (In,Mn)As can be formed by MOVPE. The origin of ferromagnetism is attributed to (In,Mn)As solid solution rather than distinct secondary Mn-rich magnetic phase(s).
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Submitted 6 October, 2003;
originally announced October 2003.
