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Silicon nanoantennas for tailoring the optical properties of MoS2 monolayers
Authors:
Danae Katrisioti,
Peter R. Wiecha,
Aurélien Cuche,
Sotiris Psilodimitrakopoulos,
Guilhem Larrieu,
Jonas Müller,
Vincent Larrey,
Bernhard Urbaszek,
Xavier Marie,
Emmanuel Stratakis,
George Kioseoglou,
Vincent Paillard,
Jean-Marie Poumirol,
Ioannis Paradisanos
Abstract:
Silicon-based dielectric nanoantennas provide an effective platform for engineering light-matter interactions in van der Waals semiconductors. Here, we demonstrate near-field coupling between monolayer MoS2 and silicon nanoantennas arranged in hexagonal lattices with tunable geometric parameters, leading to a three-fold enhancement in photoluminescence and an excitation-wavelength-dependent emissi…
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Silicon-based dielectric nanoantennas provide an effective platform for engineering light-matter interactions in van der Waals semiconductors. Here, we demonstrate near-field coupling between monolayer MoS2 and silicon nanoantennas arranged in hexagonal lattices with tunable geometric parameters, leading to a three-fold enhancement in photoluminescence and an excitation-wavelength-dependent emission that aligns with Mie-resonant modes. Raman spectroscopy reveals an up to 8-fold enhancement in the vibrational modes of MoS2, while second-harmonic generation exhibits a 20 to 30-fold increase in efficiency, closely correlating with the presence of the underlying nanoantennas. Our experiments and simulations quantify the tunable benefits of the near-field interactions, taking into account thin-film interference and strain-induced effects. Our findings present dielectric nanoantennas as a promising platform for tailoring linear and nonlinear optical properties in 2D materials, with potential applications in nanophotonic devices and integrated photonics.
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Submitted 4 April, 2025;
originally announced April 2025.
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Directional silicon nano-antennas for quantum emitter control designed by evolutionary optimization
Authors:
Romain Hernandez,
Peter R. Wiecha,
Jean-Marie Poumirol,
Gonzague Agez,
Arnaud Arbouet,
Laurence Ressier,
Vincent Paillard,
Aurélien Cuche
Abstract:
We optimize silicon nano-antennas to enhance and steer the emission of local quantum sources. We combine global evolutionary optimization (EO) with frequency domain electrodynamical simulations, and compare design strategies based on resonant and non-resonant building blocks. Specifically, we investigate the performance of models with different degrees of freedom but comparable amount of available…
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We optimize silicon nano-antennas to enhance and steer the emission of local quantum sources. We combine global evolutionary optimization (EO) with frequency domain electrodynamical simulations, and compare design strategies based on resonant and non-resonant building blocks. Specifically, we investigate the performance of models with different degrees of freedom but comparable amount of available material. We find that simpler geometric models allow significantly faster convergence of the optimizer, which, expectedly, comes at the cost of a reduced optical performance. We finally analyze the physical mechanisms underlying the directional emission that also comes with an emission rate enhancement, and find a surprising robustness against perturbations of the source emitter location. This makes the structures highly interesting for actual nano-fabrication. We believe that optimized, all-dielectric silicon nano-antennas have high potential for genuine breakthroughs in a multitude of applications in nanophotonics and quantum technologies.
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Submitted 14 September, 2023;
originally announced September 2023.
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Kapitza-resistance-like exciton dynamics in atomically flat MoSe$_{2}$-WSe$_{2}$ lateral heterojunction
Authors:
Hassan Lamsaadi,
Dorian Beret,
Ioannis Paradisanos,
Pierre Renucci,
Delphine Lagarde,
Xavier Marie,
Bernhard Urbaszek,
Ziyang Gan,
Antony George,
Kenji Watanabe,
Takashi Taniguchi,
Andrey Turchanin,
Laurent Lombez,
Nicolas Combe,
Vincent Paillard,
Jean-Marie Poumirol
Abstract:
Being able to control the neutral excitonic flux is a mandatory step for the development of future room-temperature two-dimensional excitonic devices. Semiconducting Monolayer Transition Metal Dichalcogenides (TMD-ML) with extremely robust and mobile excitons are highly attractive in this regard. However, generating an efficient and controlled exciton transport over long distances is a very challe…
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Being able to control the neutral excitonic flux is a mandatory step for the development of future room-temperature two-dimensional excitonic devices. Semiconducting Monolayer Transition Metal Dichalcogenides (TMD-ML) with extremely robust and mobile excitons are highly attractive in this regard. However, generating an efficient and controlled exciton transport over long distances is a very challenging task. Here we demonstrate that an atomically sharp TMD-ML lateral heterostructure (MoSe$_{2}$-WSe$_{2}$) transforms the isotropic exciton diffusion into a unidirectional excitonic flow through the junction. Using tip-enhanced photoluminescence spectroscopy (TEPL) and a modified exciton transfer model, we show a discontinuity of the exciton density distribution on each side of the interface. We introduce the concept of exciton Kapitza resistance, by analogy with the interfacial thermal resistance referred to as Kapitza resistance. By comparing different heterostructures with or without top hexagonal boron nitride (hBN) layer, we deduce that the transport properties can be controlled, over distances far greater than the junction width, by the exciton density through near-field engineering and/or laser power density. This work provides a new approach for controlling the neutral exciton flow, which is key toward the conception of excitonic devices.
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Submitted 23 June, 2023;
originally announced June 2023.
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Probing the optical near-field interaction of Mie nanoresonators with atomically thin semiconductors
Authors:
Ana Estrada-Real,
Ioannis Paradisanos,
Peter R. Wiecha,
Jean-Marie Poumirol,
Aurelien Cuche,
Gonzague Agez,
Delphine Lagarde,
Xavier Marie,
Vincent Larrey,
Jonas Müller,
Guilhem Larrieu,
Vincent Paillard,
Bernhard Urbaszek
Abstract:
Optical Mie resonators based on silicon nanostructures allow tuning of light-matter-interaction with advanced design concepts based on CMOS compatible nanofabrication. Optically active materials such as transition-metal dichalcogenide (TMD) monolayers can be placed in the near-field region of such Mie resonators. Here, we experimentally demonstrate and verify by numerical simulations coupling betw…
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Optical Mie resonators based on silicon nanostructures allow tuning of light-matter-interaction with advanced design concepts based on CMOS compatible nanofabrication. Optically active materials such as transition-metal dichalcogenide (TMD) monolayers can be placed in the near-field region of such Mie resonators. Here, we experimentally demonstrate and verify by numerical simulations coupling between a MoSe2 monolayer and the near-field of dielectric nanoresonators. Through a comparison of dark-field (DF) scattering spectroscopy and photoluminescence excitation experiments (PLE), we show that the MoSe2 absorption can be enhanced via the near-field of a nanoresonator. We demonstrate spectral tuning of the absorption via the geometry of individual Mie resonators. We show that we indeed access the optical near-field of the nanoresonators, by measuring a spectral shift between the typical near-field resonances in PLE compared to the far-field resonances in DF scattering. Our results prove that using MoSe2 as an active probe allows accessing the optical near-field above photonic nanostructures, without the requirement of highly complex near-field microscopy equipment.
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Submitted 25 October, 2022;
originally announced October 2022.
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Infrared nanoplasmonic properties of hyperdoped embedded Si nanocrystals in the few electrons regime
Authors:
Meiling Zhang,
Jean-Marie Poumirol,
Nicolas Chery,
Clment Majorel,
Rémi Demoulin,
Etienne Talbot,
Hervé Rinnert,
Christian Girard,
Filadelfo Cristiano,
Peter R. Wiecha,
Teresa Hungria,
Vincent Paillard,
Arnaud Arbouet,
Béatrice Pécassou,
Fabrice Gourbilleau,
Caroline Bonafos
Abstract:
Using Localized Surface Plasmon Resonance (LSPR) as an optical probe we demonstrate the presence of free carriers in phosphorus doped silicon nanocrystals (SiNCs) embedded in a silica matrix. In small SiNCs, with radius ranging from 2.6 to 5.5 nm, the infrared spectroscopy study coupled to numerical simulations allows us to determine the number of electrically active phosphorus atoms with a precis…
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Using Localized Surface Plasmon Resonance (LSPR) as an optical probe we demonstrate the presence of free carriers in phosphorus doped silicon nanocrystals (SiNCs) embedded in a silica matrix. In small SiNCs, with radius ranging from 2.6 to 5.5 nm, the infrared spectroscopy study coupled to numerical simulations allows us to determine the number of electrically active phosphorus atoms with a precision of a few atoms. We demonstrate that LSP resonances can be supported with only about 10 free electrons per nanocrystal, confirming theoretical predictions and probing the limit of the collective nature of plasmons. We reveal a phenomenon, unique to embedded nanocrystals, with the appearance of an avoided crossing behavior linked to the hybridization between the localized surface plasmon in the doped nanocrystals and the silica matrix phonon modes. Finally, a careful analysis of the scattering time dependence versus carrier density in the small size regime allows us to detect the appearance of a new scattering process at high dopant concentration.
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Submitted 27 April, 2022;
originally announced April 2022.
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Exciton spectroscopy and diffusion in MoSe2-WSe2 lateral heterostructures encapsulated in hexagonal boron nitride
Authors:
Dorian Beret,
Ioannis Paradisanos,
Ziyang Gan,
Emad Naja dehaghani,
Antony George,
Tibor Lehnert,
Johannes Biskupek,
Shivangi Shree,
Ana Estrada-Real,
Delphine Lagarde,
Jean-Marie Poumirol,
Vincent Paillard,
Kenji Watanabe,
Takashi Taniguchi,
Xavier Marie,
Ute Kaiser,
Pierre Renucci,
Laurent Lombez,
Andrey Turchanin,
Bernhard Urbaszek
Abstract:
Chemical vapor deposition (CVD) allows lateral edge epitaxy of transition metal dichalcogenide heterostructures with potential applications in optoelectronics. Critical for carrier and exciton transport is the quality of the two materials that constitute the monolayer and the nature of the lateral heterojunction. Important details of the optical properties were inaccessible in as-grown heterostruc…
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Chemical vapor deposition (CVD) allows lateral edge epitaxy of transition metal dichalcogenide heterostructures with potential applications in optoelectronics. Critical for carrier and exciton transport is the quality of the two materials that constitute the monolayer and the nature of the lateral heterojunction. Important details of the optical properties were inaccessible in as-grown heterostructure samples due to large inhomogeneous broadening of the optical transitions. Here we perform optical spectroscopy at T = 4 K and also at 300 K to access the optical transitions in CVD grown MoSe2-WSe2 lateral heterostructures that are transferred from the growth-substrate and are encapsulated in hBN. Photoluminescence (PL), reflectance contrast and Raman spectroscopy reveal considerably narrowed optical transition linewidth similar to high quality exfoliated monolayers. In high-resolution transmission electron microscopy (HRTEM) we find near-atomically sharp junctions with a typical extent of 3nm for the covalently bonded MoSe2-WSe2. In PL imaging experiments we find effective excitonic diffusion length that are longer for WSe2 than for MoSe2 at low T=4 K, whereas at 300 K this trend is reversed.
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Submitted 15 April, 2022;
originally announced April 2022.
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Hyper-doped silicon nanoantennas and metasurfaces for tunable infrared plasmonics
Authors:
Jean-Marie Poumirol,
Clément Majorel,
Nicolas Chery,
Christian Girard,
Peter R. Wiecha,
Nicolas Mallet,
Guilhem Larrieu,
Fuccio Cristiano,
Richard Monflier,
Anne-Sophie Royet,
Pablo Acosta Alba,
Sébastien Kerdiles,
Vincent Paillard,
Caroline Bonafos
Abstract:
We present the experimental realization of ordered arrays of hyper-doped silicon nanodisks, which exhibit a localized surface plasmon resonance. The plasmon is widely tunable in a spectral window between 2 and 5 $μ$m by adjusting the free carrier concentration between 10$^{20}$ and 10$^{21}$ cm$^{-3}$. We show that strong infrared light absorption can be achieved with all-silicon plasmonic metasur…
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We present the experimental realization of ordered arrays of hyper-doped silicon nanodisks, which exhibit a localized surface plasmon resonance. The plasmon is widely tunable in a spectral window between 2 and 5 $μ$m by adjusting the free carrier concentration between 10$^{20}$ and 10$^{21}$ cm$^{-3}$. We show that strong infrared light absorption can be achieved with all-silicon plasmonic metasurfaces employing nano-structures with dimensions as low as 100\,nm in diameter and 23 nm in height. Our numerical simulations show an excellent agreement with the experimental data and provide physical insights on the impact of the nanostructure shape as well as of near-field effects on the optical properties of the metasurface. Our results open highly promising perspectives for integrated all-silicon-based plasmonic devices for instance for chemical or biological sensing or for thermal imaging.
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Submitted 9 March, 2021; v1 submitted 16 November, 2020;
originally announced November 2020.
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Interband plasmon polaritons in magnetized charge-neutral graphene
Authors:
T. M. Slipchenko,
J. -M. Poumirol,
A. B. Kuzmenko,
A. Yu. Nikitin,
L. Martin-Moreno
Abstract:
Studying the collective excitations in charge neutral graphene (CNG) has recently attracted a great interest because of unusual mechanisms of the charge carrier dynamics. The latter can play a crucial role, for instance, for superconducting phases in the periodically strained CNG and the magic angle twisted bilayer graphene or for formation of graphene plasmon polaritons (GPPs) associated with int…
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Studying the collective excitations in charge neutral graphene (CNG) has recently attracted a great interest because of unusual mechanisms of the charge carrier dynamics. The latter can play a crucial role, for instance, for superconducting phases in the periodically strained CNG and the magic angle twisted bilayer graphene or for formation of graphene plasmon polaritons (GPPs) associated with interband transitions due to the strain-induced pseudomagnetic field. Importantly, GPP in CNG can be a tool providing new insights into various intriguing quantum phenomena in CNG via optical experiments. However, interband GPPs in CNG are barely investigated, even in the simplest configurations. Here, we show that magnetically biased single layer CNG (particularly, at zero temperature) can support interband GPPs of both transverse magnetic and transverse electric polarizations. They exist inside the narrow absorption bands originating from the electronic transitions between Landau levels and are tunable by the external magnetic field. We put our study into the context of potential near-field and far-field optical experiments, thus opening the door to the exploration of CNG for optics and nanophotonics.
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Submitted 1 October, 2020;
originally announced October 2020.
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Unveiling the optical emission channels of monolayer semiconductors coupled to silicon nanoantennas
Authors:
Jean-Marie Poumirol,
Ioannis Paradisanos,
Shivangi Shree,
Gonzague Agez,
Xavier Marie,
Cedric Robert,
Nicolas Mallet,
Peter R. Wiecha,
Guilhem Larrieu,
Vincent Larrey,
Frank Fournel,
Kenji Watanabe,
Takashi Taniguchi,
Aurelien Cuche,
Vincent Paillard,
Bernhard Urbaszek
Abstract:
Monolayers (MLs) of transition metal dichalcogenides (TMDs) such as WSe2 and MoSe2 can be placed by dry stamping directly on broadband dielectric resonators, which have the ability to enhance the spontaneous emission rate and brightness of solid-state emitters at room temperature. We show strongly enhanced emission and directivity modifications in room temperature photoluminescence mapping experim…
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Monolayers (MLs) of transition metal dichalcogenides (TMDs) such as WSe2 and MoSe2 can be placed by dry stamping directly on broadband dielectric resonators, which have the ability to enhance the spontaneous emission rate and brightness of solid-state emitters at room temperature. We show strongly enhanced emission and directivity modifications in room temperature photoluminescence mapping experiments. By varying TMD material (WSe2 versus MoSe2) transferred on silicon nanoresonators with various designs (planarized versus non-planarized), we experimentally separate the different physical mechanisms that govern the global light emission enhancement. For WSe2 and MoSe2 we address the effects of Mie Resonances and strain in the monolayer. For WSe2 an important additional contribution comes from out-of-plane exciton dipoles. This paves the way for more targeted designs of TMD-Si nanoresonator structures for room temperature applications.
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Submitted 24 July, 2020;
originally announced July 2020.
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High sensitivity variable-temperature infrared nanoscopy of conducting oxide interfaces
Authors:
Weiwei Luo,
Margherita Boselli,
Jean-Marie Poumirol,
Ivan Ardizzone,
Jeremie Teyssier,
Dirk van der Marel,
Stefano Gariglio,
Jean-Marc Triscone,
Alexey B. Kuzmenko
Abstract:
Probing the local transport properties of two-dimensional electron systems (2DES) confined at buried interfaces requires a non-invasive technique with a high spatial resolution operating in a broad temperature range. In this paper, we investigate the scattering-type scanning near field optical microscopy as a tool for studying the conducting LaAlO3/SrTiO3 interface from room temperature down to 6…
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Probing the local transport properties of two-dimensional electron systems (2DES) confined at buried interfaces requires a non-invasive technique with a high spatial resolution operating in a broad temperature range. In this paper, we investigate the scattering-type scanning near field optical microscopy as a tool for studying the conducting LaAlO3/SrTiO3 interface from room temperature down to 6 K. We show that the near-field optical signal, in particular its phase component, is highly sensitive to the transport properties of the electron system present at the interface. Our modelling reveals that such sensitivity originates from the interaction of the AFM tip with coupled plasmon-phonon modes with a small penetration depth. The model allows us to quantitatively correlate changes in the optical signal with the variation of the 2DES transport properties induced by cooling and by electrostatic gating. To probe the spatial resolution of the technique, we image conducting nano-channels written in insulating heterostructures with a voltage-biased tip of an atomic force microscope.
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Submitted 13 May, 2019;
originally announced May 2019.
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Magnetoplasmonic Enhancement of Faraday Rotation in Patterned Graphene Metasurfaces
Authors:
Michele Tamagnone,
Tetiana M. Slipchenko,
Clara Moldovan,
Peter Q. Liu,
Alba Centeno,
Hamed Hasani,
Amaia Zurutuza,
Adrian M. Ionescu,
Luis Martin-Moreno,
Jérôme Faist,
Juan R. Mosig,
Alexey B. Kuzmenko,
Jean-Marie Poumirol
Abstract:
Faraday rotation is a fundamental property present in all non-reciprocal optical elements. In the THz range, graphene displays strong Faraday rotation; unfortunately, it is limited to frequencies below the cyclotron resonance. Here we show experimentally that in specifically design metasurfaces, magneto-plasmons can be used to circumvent this limitation. We find excellent agreement between theory…
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Faraday rotation is a fundamental property present in all non-reciprocal optical elements. In the THz range, graphene displays strong Faraday rotation; unfortunately, it is limited to frequencies below the cyclotron resonance. Here we show experimentally that in specifically design metasurfaces, magneto-plasmons can be used to circumvent this limitation. We find excellent agreement between theory and experiment and provide new physical insights and predictions on these phenomena. Finally, we demonstrate strong tuneability in these metasurfaces using electric and magnetic field biasing.
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Submitted 16 November, 2017;
originally announced November 2017.
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Electrically controlled terahertz magneto-optical phenomena in continuous and patterned graphene
Authors:
Jean-Marie Poumirol,
Peter Q. Liu,
Tetiana M. Slipchenko,
Alexey Y. Nikitin,
Luis Martin-Moreno,
Jerome Faist,
Alexey. B. Kuzmenko
Abstract:
The magnetic circular dichroism and the Faraday rotation are the fundamental phenomena of great practical importance arising from the breaking of the time reversal symmetry by a magnetic field. In most materials the strength and the sign of these effects can be only controlled by the field value and its orientation. Furthermore, the terahertz range is lacking materials having the ability to affect…
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The magnetic circular dichroism and the Faraday rotation are the fundamental phenomena of great practical importance arising from the breaking of the time reversal symmetry by a magnetic field. In most materials the strength and the sign of these effects can be only controlled by the field value and its orientation. Furthermore, the terahertz range is lacking materials having the ability to affect the polarisation state of the light in a non-reciprocal manner. Here we demonstrate, using broadband terahertz magneto-electro-optical spectroscopy, that in graphene both the magnetic circular dichroism and the Faraday rotation can be modulated in intensity, tuned in frequency and, importantly, inverted using only electrostatic doping at a fixed magnetic field. In addition, we observe strong magneto-plasmonic resonances in a patterned array of graphene antidots, which potentially allows exploiting these magneto-optical phenomena in a broad THz range.
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Submitted 7 March, 2017;
originally announced March 2017.
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Isotope effect in superconducting n-doped SrTiO$_3$
Authors:
A. Stucky,
G. Scheerer,
Z. Ren,
D. Jaccard,
J. -M. Poumirol,
C. Barreteau,
E. Giannini,
D. van der Marel
Abstract:
We report the influence on the superconducting critical temperature $T_c$ in doped SrTiO$_3$ of the substitution of the natural $^{16}$O atoms by the heavier isotope $^{18}$O. We observe that for a wide range of doping this substitution causes a strong ($\sim 50 \%$) enhancement of $T_c$. Also the magnetic critical field $H_{c2}$ is increased by a factor $\sim 2$. Such a strong impact on $T_c$ and…
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We report the influence on the superconducting critical temperature $T_c$ in doped SrTiO$_3$ of the substitution of the natural $^{16}$O atoms by the heavier isotope $^{18}$O. We observe that for a wide range of doping this substitution causes a strong ($\sim 50 \%$) enhancement of $T_c$. Also the magnetic critical field $H_{c2}$ is increased by a factor $\sim 2$. Such a strong impact on $T_c$ and $H_{c2}$, with a sign opposite to conventional superconductors, is unprecedented. The observed effect could be the consequence of strong coupling of the doped electrons to lattice vibrations (phonons), a notion which finds support in numerous optical and photo-emission studies. The unusually large size of the observed isotope effect supports a recent model for superconductivity in these materials based on strong coupling to the ferroelectric soft modes of SrTiO$_{3}$.
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Submitted 2 November, 2016; v1 submitted 31 October, 2016;
originally announced October 2016.
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Suppressed magnetic circular dichroism and valley-selective magneto-absorption due to the effective mass anisotropy in bismuth
Authors:
Pieter J. de Visser,
Julien Levallois,
Michaël K. Tran,
Jean-Marie Poumirol,
Ievgeniia O. Nedoliuk,
Jérémie Teyssier,
Ctirad Uher,
Dirk van der Marel,
Alexey B. Kuzmenko
Abstract:
We have measured the far-infrared reflectivity and Kerr angle spectra on a high-quality crystal of pure semimetallic bismuth as a function of magnetic field, from which we extract the conductivity for left- and right handed circular polarisations. The high spectral resolution allows us to separate the intraband Landau level transitions for electrons and holes. The hole transition exhibits 100% mag…
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We have measured the far-infrared reflectivity and Kerr angle spectra on a high-quality crystal of pure semimetallic bismuth as a function of magnetic field, from which we extract the conductivity for left- and right handed circular polarisations. The high spectral resolution allows us to separate the intraband Landau level transitions for electrons and holes. The hole transition exhibits 100% magnetic circular dichroism, it appears only for one polarisation as expected for a circular cyclotron orbit. However the dichroism for electron transitions is reduced to only $13\pm 1$%, which is quantitatively explained by the large effective mass anisotropy of the electron pockets of the Fermi surface. This observation is a signature of the mismatch between the metric experienced by the photons and the electrons. It allows for a contactless measurement of the effective mass anisotropy and provides a direction towards valley polarised magneto-optical pumping with elliptically polarised light.
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Submitted 2 August, 2016; v1 submitted 30 May, 2016;
originally announced May 2016.
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Hall and field-effect mobilities in few layered $p$-WSe$_2$ field-effect transistors
Authors:
N. R. Pradhan,
D. Rhodes,
S. Memaran,
J. M. Poumirol,
D. Smirnov,
S. Talapatra,
S. Feng,
N. Perea-Lopez,
A. L. Elias,
M. Terrones,
P. M. Ajayan,
L. Balicas
Abstract:
Here, we present a temperature ($T$) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe$_2$ exfoliated onto SiO$_2$. Without dielectric engineering and beyond a $T$-dependent threshold gate-voltage, we observe maximum hole mobilities approaching 350 cm$^2$/Vs at $T$=300 K. The hole Hall mobility reaches a maximum value of 650 cm$^2$/V…
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Here, we present a temperature ($T$) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe$_2$ exfoliated onto SiO$_2$. Without dielectric engineering and beyond a $T$-dependent threshold gate-voltage, we observe maximum hole mobilities approaching 350 cm$^2$/Vs at $T$=300 K. The hole Hall mobility reaches a maximum value of 650 cm$^2$/Vs as $T$ is lowered below $\sim$ 150 K, indicating that insofar WSe$_2$-based field-effect transistors (FETs) display the largest Hall mobilities among the transition metal dichalcogenides. The gate capacitance, as extracted from the Hall-effect, reveals the presence of spurious charges in the channel, while the two-terminal sheet resistivity displays two-dimensional variable-range hopping behavior, indicating carrier localization induced by disorder at the interface between WSe$_2$ and SiO$_2$. We argue that improvements in the fabrication protocols as, for example, the use of a substrate free of dangling bonds are likely to produce WSe$_2$-based FETs displaying higher room temperature mobilities, i.e. approaching those of $p$-doped Si, which would make it a suitable candidate for high performance opto-electronics.
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Submitted 1 February, 2015;
originally announced February 2015.
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Multicomponent Quantum Hall Ferromagnetism and Landau Level Crossing in Rhombohedral Trilayer Graphene
Authors:
Y. Lee,
D. Tran,
K. Myhro,
J. Velasco Jr.,
N. Gillgren,
J. M. Poumirol,
D. Smirnov,
Y. Barlas,
C. N. Lau
Abstract:
Using transport measurements, we investigate multicomponent quantum Hall (QH) ferromagnetism in dual-gated rhombohedral trilayer graphene (r-TLG), in which the real spin, orbital pseudospin and layer pseudospins of the lowest Landau level form spontaneous ordering. We observe intermediate quantum Hall plateaus, indicating a complete lifting of the degeneracy of the zeroth Landau level (LL) in the…
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Using transport measurements, we investigate multicomponent quantum Hall (QH) ferromagnetism in dual-gated rhombohedral trilayer graphene (r-TLG), in which the real spin, orbital pseudospin and layer pseudospins of the lowest Landau level form spontaneous ordering. We observe intermediate quantum Hall plateaus, indicating a complete lifting of the degeneracy of the zeroth Landau level (LL) in the hole-doped regime. In charge neutral r-TLG, the orbital degeneracy is broken first, and the layer degeneracy is broken last and only the in presence of an interlayer potential U. In the phase space of U and filling factor, we observe an intriguing hexagon pattern, which is accounted for by a model based on crossings between symmetry-broken LLs.
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Submitted 16 January, 2016; v1 submitted 12 June, 2014;
originally announced June 2014.
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Giant Interaction-Induced Gap and Electronic Phases in Rhombohedral Trilayer Graphene
Authors:
Y. Lee,
D. Tran,
K. Myhro,
J. Velasco Jr.,
N. Gillgren,
C. N. Lau,
Y. Barlas,
J. M. Poumirol,
D. Smirnov,
F. Guinea
Abstract:
Due to their unique electron dispersion and lack of a Fermi surface, Coulomb interactions in undoped two-dimensional Dirac systems, such as single, bi- and tri-layer graphene, can be marginal or relevant. Relevant interactions can result in spontaneous symmetry breaking, which is responsible for a large class of physical phenomena ranging from mass generation in high energy physics to correlated s…
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Due to their unique electron dispersion and lack of a Fermi surface, Coulomb interactions in undoped two-dimensional Dirac systems, such as single, bi- and tri-layer graphene, can be marginal or relevant. Relevant interactions can result in spontaneous symmetry breaking, which is responsible for a large class of physical phenomena ranging from mass generation in high energy physics to correlated states such as superconductivity and magnetism in condensed matter. Here, using transport measurements, we show that rhombohedral-stacked trilayer graphene (r-TLG) offers a simple, yet novel and tunable, platform for study of various phases with spontaneous or field-induced broken symmetries. Here, we show that, contrary to predictions by tight-binding calculations, rhombohedral-stacked trilayer graphene (r-TLG) is an intrinsic insulator, with a giant interaction-induced gap Δ~42meV. This insulating state is a spontaneous layer antiferromagnetic with broken time reversal symmetry, and can be suppressed by increasing charge density n, an interlayer potential, a parallel magnetic field, or a critical temperature Tc~38K. This gapped collective state can be explored for switches with low input power and high on/off ratio.
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Submitted 26 February, 2014;
originally announced February 2014.
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Cyclotron resonance of single valley Dirac fermions in gapless HgTe quantum well
Authors:
J. Ludwig,
Yu. B. Vasilyev,
N. N. Mikhailov,
J. M. Poumirol,
Z. Jiang,
O. Vafek,
D. Smirnov
Abstract:
We report on Landau level spectroscopy studies of two HgTe quantum wells (QWs) near or at the critical well thickness, where the band gap vanishes. In magnetic fields up to $B$=16T, oriented perpendicular to the QW plane, we observe a $\sqrt{B}$ dependence for the energy of the dominant cyclotron resonance (CR) transition characteristic of two-dimensional Dirac fermions. The dominant CR line exhib…
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We report on Landau level spectroscopy studies of two HgTe quantum wells (QWs) near or at the critical well thickness, where the band gap vanishes. In magnetic fields up to $B$=16T, oriented perpendicular to the QW plane, we observe a $\sqrt{B}$ dependence for the energy of the dominant cyclotron resonance (CR) transition characteristic of two-dimensional Dirac fermions. The dominant CR line exhibits either a single or double absorption lineshape for the gapless or gapped QW. Using an effective Dirac model, we deduce the band velocity of single valley Dirac fermions in gapless HgTe quantum wells, $v_F=6.4 \times10^5$ m/s, and interpret the double absorption of the gapped QW as resulting from the addition of a small relativistic mass.
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Submitted 18 October, 2013;
originally announced October 2013.
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Magnetoplasmons in quasi-neutral epitaxial graphene nanoribbons
Authors:
J. M. Poumirol,
W. Yu,
X. Chen,
C. Berger,
W. A. de Heer,
M. L. Smith,
T. Ohta,
W. Pan,
M. O. Goerbig,
D. Smirnov,
Z. Jiang
Abstract:
We present infrared transmission spectroscopy study of the inter-Landau-level excitations in quasi-neutral epitaxial graphene nanoribbon arrays. We observed a substantial deviation in energy of the $L_{0(-1)}$$\to$$L_{1(0)}$ transition from the characteristic square root magnetic-field dependence of two-dimensional graphene. This deviation arises from the formation of upper-hybrid mode between the…
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We present infrared transmission spectroscopy study of the inter-Landau-level excitations in quasi-neutral epitaxial graphene nanoribbon arrays. We observed a substantial deviation in energy of the $L_{0(-1)}$$\to$$L_{1(0)}$ transition from the characteristic square root magnetic-field dependence of two-dimensional graphene. This deviation arises from the formation of upper-hybrid mode between the Landau level transition and the plasmon resonance. In the quantum regime the hybrid mode exhibits a distinct dispersion relation, markedly different from that expected for conventional two-dimensional systems and highly doped graphene.
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Submitted 29 June, 2013; v1 submitted 21 May, 2013;
originally announced May 2013.
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Measurement of Filling-Factor-Dependent Magnetophonon Resonances in Graphene Using Raman Spectroscopy
Authors:
Y. Kim,
J. M. Poumirol,
A. Lombardo,
N. G. Kalugin,
T. Georgiou,
Y. J. Kim,
K. S. Novoselov,
A. C. Ferrari,
J. Kono,
O. Kashuba,
V. I. Fal'ko,
D. Smirnov
Abstract:
We perform polarization-resolved Raman spectroscopy on graphene in magnetic fields up to 45T. This reveals a filling-factor-dependent, multi-component anticrossing structure of the Raman G peak, resulting from magnetophonon resonances between magnetoexcitons and E$_{2g}$ phonons. This is explained with a model of Raman scattering taking into account the effects of spatially inhomogeneous carrier d…
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We perform polarization-resolved Raman spectroscopy on graphene in magnetic fields up to 45T. This reveals a filling-factor-dependent, multi-component anticrossing structure of the Raman G peak, resulting from magnetophonon resonances between magnetoexcitons and E$_{2g}$ phonons. This is explained with a model of Raman scattering taking into account the effects of spatially inhomogeneous carrier densities and strain. Random fluctuations of strain-induced pseudo-magnetic fields lead to increased scattering intensity inside the anti-crossing gap, consistent with the experiment.
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Submitted 19 June, 2013; v1 submitted 26 November, 2012;
originally announced November 2012.
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Integer Quantum Hall Effect in Trilayer Graphene
Authors:
A. Kumar,
W. Escoffier,
J. M. Poumirol,
C. Faugeras,
D. P. Arovas,
M. M. Fogler,
F. Guinea,
S. Roche,
M. Goiran,
B. Raquet
Abstract:
The Integer Quantum Hall Effect (IQHE) is a distinctive phase of two-dimensional electronic systems subjected to a perpendicular magnetic field. Thus far, the IQHE has been observed in semiconductor heterostructures and in mono- and bi-layer graphene. Here we report on the IQHE in a new system: trilayer graphene. Experimental data are compared with self-consistent Hartree calculations of the Landa…
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The Integer Quantum Hall Effect (IQHE) is a distinctive phase of two-dimensional electronic systems subjected to a perpendicular magnetic field. Thus far, the IQHE has been observed in semiconductor heterostructures and in mono- and bi-layer graphene. Here we report on the IQHE in a new system: trilayer graphene. Experimental data are compared with self-consistent Hartree calculations of the Landau levels for the gated trilayer. The plateau structure in the Hall resistivity determines the stacking order (ABA versus ABC). We find that the IQHE in ABC trilayer graphene is similar to that in the monolayer, except for the absence of a plateau at filling factor v=2. At very low filling factor, the Hall resistance vanishes due to the presence of mixed electron and hole carriers induced by disorder.
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Submitted 6 April, 2011;
originally announced April 2011.
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Unveiling the Landau Levels Structure of Graphene Nanoribbons
Authors:
Rebeca Ribeiro,
Jean-Marie Poumirol,
Alessandro Cresti,
Walter Escoffier,
Michel Goiran,
Jean-Marc Broto,
Stephan Roche,
Bertrand Raquet
Abstract:
Magnetotransport measurements are performed in ultraclean (lithographically patterned) graphene nanoribbons down to 70 nm. At high magnetic fields, a fragmentation of the electronic spectrum into a Landau levels pattern with unusual features is unveiled. The singular Landau spectrum reveals large magneto-oscillations of the Fermi energy and valley degeneracy lifting. Quantum simulations suggest so…
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Magnetotransport measurements are performed in ultraclean (lithographically patterned) graphene nanoribbons down to 70 nm. At high magnetic fields, a fragmentation of the electronic spectrum into a Landau levels pattern with unusual features is unveiled. The singular Landau spectrum reveals large magneto-oscillations of the Fermi energy and valley degeneracy lifting. Quantum simulations suggest some disorder threshold at the origin of mixing between opposite chiral magnetic edge states and disappearance of quantum Hall effect.
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Submitted 16 February, 2011;
originally announced February 2011.
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High magnetic field induced charge density waves and sign reversal of the Hall coefficient in graphite
Authors:
Amit Kumar,
Jean-Marie Poumirol,
Walter Escoffier,
Michel Goiran,
Bertrand Raquet,
Jean Claude Pivin
Abstract:
We report on the investigation of magnetic field induced charge density wave and Hall coefficient sign reversal in a quasi-two dimensional electronic system of highly oriented pyrolytic graphite under very strong magnetic field. The change of Hall sign coefficient from negative to positive occurs at low temperature and high magnetic field just after the charge density wave transition, suggesting t…
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We report on the investigation of magnetic field induced charge density wave and Hall coefficient sign reversal in a quasi-two dimensional electronic system of highly oriented pyrolytic graphite under very strong magnetic field. The change of Hall sign coefficient from negative to positive occurs at low temperature and high magnetic field just after the charge density wave transition, suggesting the role of hole-like quasi-particles in this effect. Angular dependent measurements show that the charge density wave transition and Hall sign reversal fields follow the magnetic field component along the c-axis of graphite.
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Submitted 6 June, 2010;
originally announced June 2010.
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Electron-hole coexistence in disordered graphene probed by high-field magneto-transport
Authors:
J. M. Poumirol,
W. Escoffier,
A. Kumar,
M. Goiran,
B. Raquet,
J. M. Broto
Abstract:
We report on magneto-transport measurement in disordered graphene under pulsed magnetic field of up to 57T. For large electron or hole doping, the system displays the expected anomalous Integer Quantum Hall Effect (IQHE) specific to graphene up to filling factor $ν=2$. In the close vicinity of the charge neutrality point, the system breaks up into co-existing puddles of holes and electrons, leadin…
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We report on magneto-transport measurement in disordered graphene under pulsed magnetic field of up to 57T. For large electron or hole doping, the system displays the expected anomalous Integer Quantum Hall Effect (IQHE) specific to graphene up to filling factor $ν=2$. In the close vicinity of the charge neutrality point, the system breaks up into co-existing puddles of holes and electrons, leading to a vanishing Hall and finite longitudinal resistance with no hint of divergence at very high magnetic field. Large resistance fluctuations are observed near the Dirac point. They are interpreted as the the natural consequence of the presence of electron and hole puddles. The magnetic field at which the amplitude of the fluctuations are the largest is directly linked to the mean size of the puddles.
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Submitted 14 April, 2010;
originally announced April 2010.
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Edge Magneto-Fingerprints in Disordered Graphene Nanoribbons
Authors:
Jean-Marie Poumirol,
Alessandro Cresti,
Stephan Roche,
Walter Escoffier,
Michel Goiran,
Xinran Wang,
Xiaolin Li,
Hongjie Dai,
Bertrand Raquet
Abstract:
We report on (magneto)-transport experiments in chemically derived narrow graphene nanoribbons under high magnetic fields (up to 60 Tesla). Evidences of field-dependent electronic confinement features are given, and allow estimating the possible ribbon edge symmetry. Besides, the measured large positive magnetoconductance indicates a strong suppression of backscattering induced by the magnetic f…
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We report on (magneto)-transport experiments in chemically derived narrow graphene nanoribbons under high magnetic fields (up to 60 Tesla). Evidences of field-dependent electronic confinement features are given, and allow estimating the possible ribbon edge symmetry. Besides, the measured large positive magnetoconductance indicates a strong suppression of backscattering induced by the magnetic field. Such scenario is supported by quantum simulations which consider different types of underlying disorders (smooth edge disorder and long range Coulomb scatters).
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Submitted 24 February, 2010;
originally announced February 2010.
