Thermal stability and phase transformation of $α$-, $κ(ε)$-, and $γ$-Ga$_2$O$_3$ thin films to $β$-Ga$_2$O$_3$ under various ambient conditions
Authors:
J. Tang,
K. Jiang,
P. Tseng,
R. C. Kurchin,
L. M. Porter,
R. F. Davis
Abstract:
Phase transitions in metastable $α$-, $κ(ε)$-, and $γ$-Ga$_2$O$_3$ films to thermodynamically stable $β$-Ga$_2$O$_3$ during annealing in air, N$_2$, and vacuum have been systematically investigated via in-situ high-temperature X-ray diffraction and scanning electron microscopy. These respective polymorphs exhibited thermal stability to around 471-525$^\circ$C, 773-825$^\circ$C, and 490-575…
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Phase transitions in metastable $α$-, $κ(ε)$-, and $γ$-Ga$_2$O$_3$ films to thermodynamically stable $β$-Ga$_2$O$_3$ during annealing in air, N$_2$, and vacuum have been systematically investigated via in-situ high-temperature X-ray diffraction and scanning electron microscopy. These respective polymorphs exhibited thermal stability to around 471-525$^\circ$C, 773-825$^\circ$C, and 490-575$^\circ$C before transforming into $β$-Ga$_2$O$_3$, across all tested ambient conditions. Particular crystallographic orientation relationships were observed before and after the phase transitions, i.e., (0006) $α$-Ga$_2$O$_3$ $\parallel$ $(\overline{4}02)$ $β$-Ga$_2$O$_3$, (004) $κ(ε)$-Ga$_2$O$_3$ $\parallel$ (310) and $(\overline{4}02)$ $β$-Ga$_2$O$_3$, and (400) $γ$-Ga$_2$O$_3$ $\parallel$ (400) $β$-Ga$_2$O$_3$. The phase transition of $α$-Ga$_2$O$_3$ to $β$-Ga$_2$O$_3$ resulted in catastrophic damage to the film and upheaval of the surface. The respective primary and possibly secondary causes of this damage are the +8.6% volume expansion and the dual displacive and reconstructive transformations that occur during this transition. The $κ(ε)$- and $γ$-Ga$_2$O$_3$ films converted to $β$-Ga$_2$O$_3$ via singular reconstructive transformations with small changes in volume and unchanged surface microstructures.
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Submitted 30 April, 2024;
originally announced May 2024.
Atomic-scale investigation of $γ$-Ga$_2$O$_3$ deposited on MgAl$_2$O$_4$ and its relationship with $β$-Ga$_2$O$_3$
Authors:
J. Tang,
K. Jiang,
C. Xu,
M. J. Cabral,
K. Xiao,
L. M. Porter,
R. F. Davis
Abstract:
Nominally phase-pure $γ$-$Ga_2O_3$ was deposited on (100) $MgAl_2O_4$ within a narrow temperature window centered at $\sim$470 $^{\circ}$C using metal-organic chemical vapor deposition (MOCVD). The film deposited at 440 $^{\circ}$C exhibited either poor crystallization or an amorphous structure; the film grown at 500 $^{\circ}$C contained both $β$-$Ga_2O_3$ and $γ$-$Ga_2O_3$. A nominally phase-pur…
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Nominally phase-pure $γ$-$Ga_2O_3$ was deposited on (100) $MgAl_2O_4$ within a narrow temperature window centered at $\sim$470 $^{\circ}$C using metal-organic chemical vapor deposition (MOCVD). The film deposited at 440 $^{\circ}$C exhibited either poor crystallization or an amorphous structure; the film grown at 500 $^{\circ}$C contained both $β$-$Ga_2O_3$ and $γ$-$Ga_2O_3$. A nominally phase-pure $β$-$Ga_2O_3$ film was obtained at 530 $^{\circ}$C. Atomic-resolution scanning transmission electron microscopy (STEM) investigations of the $γ$-$Ga_2O_3$ film grown at 470 $^{\circ}$C revealed a high density of antiphase boundaries. A planar defect model developed for $γ$-$Al_2O_3$ was extended to explain the stacking sequences of the Ga sublattice observed in the STEM images of $γ$-$Ga_2O_3$. The presence of the 180$^{\circ}$ rotational domains and 90$^{\circ}$ rotational domains of $β$-$Ga_2O_3$ inclusions within the $γ$-$Ga_2O_3$ matrix is discussed within the context of a comprehensive investigation of the epitaxial relationship between those two phases in the as-grown film at 470 $^{\circ}$C and the same film annealed at 600 $^{\circ}$C. The results led to the hypotheses that (i) incorporation of certain dopants including Si, Ge, Sn, Mg, Al, and Sc, into $β$-$Ga_2O_3$, locally stabilizes the "$γ$-phase" and (ii) the site preference(s) for these dopants promotes the formation of the "$γ$-phase" and/or $γ$-$Ga_2O_3$ solid solutions. However, in the absence of such dopants, pure $γ$-$Ga_2O_3$ remains the least stable $Ga_2O_3$ polymorph, as indicated by its very narrow growth window, lower growth temperatures relative to other $Ga_2O_3$ polymorphs, and the largest calculated difference in Helmholtz free energy per formula unit between $γ$-$Ga_2O_3$ and $β$-$Ga_2O_3$ than all other polymorphs.
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Submitted 20 October, 2023; v1 submitted 19 October, 2023;
originally announced October 2023.
