Quantum Hall resistance standards from graphene grown by chemical vapor deposition on silicon carbide
Authors:
F. Lafont,
R. Ribeiro-Palau,
D. Kazazis,
A. Michon,
O. Couturaud,
C. Consejo,
T. Chassagne,
M. Zielinski,
M. Portail,
B. Jouault,
F. Schopfer,
W. Poirier
Abstract:
Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within $10^{-9}$ in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the required accuracy has been reported, only few times, in graphene grown on SiC by sublimation of Si, under higher magnetic fields. Here, we report on a device mad…
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Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within $10^{-9}$ in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the required accuracy has been reported, only few times, in graphene grown on SiC by sublimation of Si, under higher magnetic fields. Here, we report on a device made of graphene grown by chemical vapour deposition on SiC which demonstrates such accuracies of the Hall resistance from 10 T up to 19 T at 1.4 K. This is explained by a quantum Hall effect with low dissipation, resulting from strongly localized bulk states at the magnetic length scale, over a wide magnetic field range. Our results show that graphene-based QHRS can replace their GaAs counterparts by operating in as-convenient cryomagnetic conditions, but over an extended magnetic field range. They rely on a promising hybrid and scalable growth method and a fabrication process achieving low-electron density devices.
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Submitted 20 April, 2015; v1 submitted 14 July, 2014;
originally announced July 2014.
Magnetoresistance of disordered graphene: from low to high temperatures
Authors:
B. Jabakhanji,
D. Kazazis,
W. Desrat,
A. Michon,
M. Portail,
B. Jouault
Abstract:
We present the magnetoresistance (MR) of highly doped monolayer graphene layers grown by chemical vapor deposition on 6H-SiC. The magnetotransport studies are performed on a large temperature range, from $T$ = 1.7 K up to room temperature. The MR exhibits a maximum in the temperature range $120-240$ K. The maximum is observed at intermediate magnetic fields ($B=2-6$ T), in between the weak localiz…
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We present the magnetoresistance (MR) of highly doped monolayer graphene layers grown by chemical vapor deposition on 6H-SiC. The magnetotransport studies are performed on a large temperature range, from $T$ = 1.7 K up to room temperature. The MR exhibits a maximum in the temperature range $120-240$ K. The maximum is observed at intermediate magnetic fields ($B=2-6$ T), in between the weak localization and the Shubnikov-de Haas regimes. It results from the competition of two mechanisms. First, the low field magnetoresistance increases continuously with $T$ and has a purely classical origin. This positive MR is induced by thermal averaging and finds its physical origin in the energy dependence of the mobility around the Fermi energy. Second, the high field negative MR originates from the electron-electron interaction (EEI). The transition from the diffusive to the ballistic regime is observed. The amplitude of the EEI correction points towards the coexistence of both long and short range disorder in these samples.
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Submitted 24 June, 2014;
originally announced June 2014.
