Showing 1–10 of 10 results for author: Popinciuc, M

Zero-bias conductance peak and Josephson effect in graphene-NbTiN junctions

Authors: Mihai Popinciuc, Victor E. Calado, Xing L. Liu, Anton R. Akhmerov, Teun M. Klapwijk, Lieven M. K. Vandersypen

Abstract: We report electronic transport measurements of graphene contacted by NbTiN electrodes, which at low temperature remain superconducting up to at least 11 Tesla. In devices with a single superconducting contact, we find a more than twofold enhancement of the conductance at zero bias, which we interpret in terms of reflectionless tunneling. In devices with two superconducting contacts, we observe the… ▽ More We report electronic transport measurements of graphene contacted by NbTiN electrodes, which at low temperature remain superconducting up to at least 11 Tesla. In devices with a single superconducting contact, we find a more than twofold enhancement of the conductance at zero bias, which we interpret in terms of reflectionless tunneling. In devices with two superconducting contacts, we observe the Josephson effect, bipolar supercurrents and Fraunhofer patterns. △ Less

Submitted 21 February, 2012; originally announced February 2012.

Comments: 6 pages, 5 figures

Journal ref: Phys. Rev. B 85, 205404 (2012)

Observation of Long Spin Relaxation Times in Bilayer Graphene at Room Temperature

Authors: T. -Y. Yang, J. Balakrishnan, F. Volmer, A. Avsar, M. Jaiswal, J. Samm, S. R. Ali, A. Pachoud, M. Zeng, M. Popinciuc, G. Güntherodt, B. Beschoten, B. Özyilmaz

Abstract: We report on the first systematic study of spin transport in bilayer graphene (BLG) as a function of mobility, minimum conductivity, charge density and temperature. The spin relaxation time $τ_s$ scales inversely with the mobility $μ$ of BLG samples both at room temperature and at low temperature. This indicates the importance of D'yakonov - Perel' spin scattering in BLG. Spin relaxation times of… ▽ More We report on the first systematic study of spin transport in bilayer graphene (BLG) as a function of mobility, minimum conductivity, charge density and temperature. The spin relaxation time $τ_s$ scales inversely with the mobility $μ$ of BLG samples both at room temperature and at low temperature. This indicates the importance of D'yakonov - Perel' spin scattering in BLG. Spin relaxation times of up to 2 ns are observed in samples with the lowest mobility. These times are an order of magnitude longer than any values previously reported for single layer graphene (SLG). We discuss the role of intrinsic and extrinsic factors that could lead to the dominance of D'yakonov-Perel' spin scattering in BLG. In comparison to SLG, significant changes in the density dependence of $τ_s$ are observed as a function of temperature. △ Less

Submitted 20 June, 2011; v1 submitted 6 December, 2010; originally announced December 2010.

Comments: 19 pages, 7 figures, includes supplementary information, accepted for publication in Physical Review Letters

Journal ref: Phys. Rev. Lett. 107, 047206 (2011)

Linear scaling between momentum and spin scattering in graphene

Authors: C. Jozsa, T. Maassen, M. Popinciuc, P. J. Zomer, A. Veligura, H. T. Jonkman, B. J. van Wees

Abstract: Spin transport in graphene carries the potential of a long spin diffusion length at room temperature. However, extrinsic relaxation processes limit the current experimental values to 1-2 um. We present Hanle spin precession measurements in gated lateral spin valve devices in the low to high (up to 10^13 cm^-2) carrier density range of graphene. A linear scaling between the spin diffusion length… ▽ More Spin transport in graphene carries the potential of a long spin diffusion length at room temperature. However, extrinsic relaxation processes limit the current experimental values to 1-2 um. We present Hanle spin precession measurements in gated lateral spin valve devices in the low to high (up to 10^13 cm^-2) carrier density range of graphene. A linear scaling between the spin diffusion length and the diffusion coefficient is observed. We measure nearly identical spin- and charge diffusion coefficients indicating that electron-electron interactions are relatively weak and transport is limited by impurity potential scattering. When extrapolated to the maximum carrier mobilities of 2x10^5 cm^2/Vs, our results predict that a considerable increase in the spin diffusion length should be possible. △ Less

Submitted 28 November, 2009; v1 submitted 6 October, 2009; originally announced October 2009.

Journal ref: Phys. Rev. B 80, 241403(R) (2009)

Electronic spin transport in graphene field effect transistors

Authors: M. Popinciuc, C. Józsa, P. J. Zomer, N. Tombros, A. Veligura, H. T. Jonkman, B. J. van Wees

Abstract: Spin transport experiments in graphene, a single layer of carbon atoms, indicate spin relaxation times that are significantly shorter than the theoretical predictions. We investigate experimentally whether these short spin relaxation times are due to extrinsic factors, such as spin relaxation caused by low impedance contacts, enhanced spin flip processes at the device edges or the presence of an… ▽ More Spin transport experiments in graphene, a single layer of carbon atoms, indicate spin relaxation times that are significantly shorter than the theoretical predictions. We investigate experimentally whether these short spin relaxation times are due to extrinsic factors, such as spin relaxation caused by low impedance contacts, enhanced spin flip processes at the device edges or the presence of an aluminium oxide layer on top of graphene in some samples. Lateral spin valve devices using a field effect transistor geometry allowed for the investigation of the spin relaxation as a function of the charge density, going continuously from metallic hole to electron conduction (charge densities of $n\sim 10^{12}$cm$^{-2}$) via the Dirac charge neutrality point ($n \sim 0$). The results are quantitatively described by a one dimensional spin diffusion model where the spin relaxation via the contacts is taken into account. Spin valve experiments for various injector/detector separations and spin precession experiments reveal that the longitudinal (T$_1$) and the transversal (T$_2$) relaxation times are similar. The anisotropy of the spin relaxation times $τ_\parallel$ and $τ_\perp$, when the spins are injected parallel or perpendicular to the graphene plane, indicates that the effective spin orbit fields do not lie exclusively in the two dimensional graphene plane. Furthermore, the proportionality between the spin relaxation time and the momentum relaxation time indicates that the spin relaxation mechanism is of the Elliott-Yafet type. For carrier mobilities of 2-5$\times 10^3$ cm$2^$/Vs and for graphene flakes of 0.1-2 $μ$m in width, we found spin relaxation times of the order of 50-200 ps, times which appear not to be determined by the extrinsic factors mentioned above. △ Less

Submitted 7 August, 2009; originally announced August 2009.

Comments: 11 pages, 13 figures

Controlling the efficiency of spin injection into graphene by carrier drift

Authors: C. Józsa, M. Popinciuc, N. Tombros, H. T. Jonkman, B. J. van Wees

Abstract: Electrical spin injection from ferromagnetic metals into graphene is hindered by the impedance mismatch between the two materials. This problem can be reduced by the introduction of a thin tunnel barrier at the interface. We present room temperature non-local spin valve measurements in cobalt/aluminum-oxide/graphene structures with an injection efficiency as high as 25%, where electrical contact… ▽ More Electrical spin injection from ferromagnetic metals into graphene is hindered by the impedance mismatch between the two materials. This problem can be reduced by the introduction of a thin tunnel barrier at the interface. We present room temperature non-local spin valve measurements in cobalt/aluminum-oxide/graphene structures with an injection efficiency as high as 25%, where electrical contact is achieved through relatively transparent pinholes in the oxide. This value is further enhanced to 43% by applying a DC current bias on the injector electrodes, that causes carrier drift away from the contact. A reverse bias reduces the AC spin valve signal to zero or negative values. We introduce a model that quantitatively predicts the behavior of the spin accumulation in the graphene under such circumstances, showing a good agreement with our measurements. △ Less

Submitted 18 November, 2008; originally announced November 2008.

Comments: 4 pages, 3 color figures

Journal ref: Phys. Rev. B 79, 081402(R) (2009)

Anisotropic spin relaxation in graphene

Authors: N. Tombros, S. Tanabe, A. Veligura, C. Jozsa, M. Popinciuc, H. T. Jonkman, B. J. van Wees

Abstract: Spin relaxation in graphene is investigated in electrical graphene spin valve devices in the non-local geometry. Ferromagnetic electrodes with in-plane magnetizations inject spins parallel to the graphene layer. They are subject to Hanle spin precession under a magnetic field $B$ applied perpendicular to the graphene layer. Fields above 1.5 T force the magnetization direction of the ferromagneti… ▽ More Spin relaxation in graphene is investigated in electrical graphene spin valve devices in the non-local geometry. Ferromagnetic electrodes with in-plane magnetizations inject spins parallel to the graphene layer. They are subject to Hanle spin precession under a magnetic field $B$ applied perpendicular to the graphene layer. Fields above 1.5 T force the magnetization direction of the ferromagnetic contacts to align to the field, allowing injection of spins perpendicular to the graphene plane. A comparison of the spin signals at B = 0 and B = 2 T shows a 20 % decrease in spin relaxation time for spins perpendicular to the graphene layer compared to spins parallel to the layer. We analyze the results in terms of the different strengths of the spin orbit effective fields in the in-plane and out-of-plane directions. △ Less

Submitted 20 February, 2008; originally announced February 2008.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 101, 046601 (2008)

Electronic spin drift in graphene field effect transistors

Authors: C. Jozsa, M. Popinciuc, N. Tombros, H. T. Jonkman, B. J. van Wees

Abstract: We studied the drift of electron spins under an applied DC electric field in single layer graphene spin valves in a field effect transport geometry at room temperature. In the metallic conduction regime ($n \simeq 3.5 \times 10^{16}$ m$^{-2}$), for DC fields of about $\pm$70 kV/m applied between the spin injector and spin detector, the spin valve signals are increased/decreased, depending on the… ▽ More We studied the drift of electron spins under an applied DC electric field in single layer graphene spin valves in a field effect transport geometry at room temperature. In the metallic conduction regime ($n \simeq 3.5 \times 10^{16}$ m$^{-2}$), for DC fields of about $\pm$70 kV/m applied between the spin injector and spin detector, the spin valve signals are increased/decreased, depending on the direction of the DC field and the carrier type, by as much as $\pm$50%. Sign reversal of the drift effect is observed when switching from hole to electron conduction. In the vicinity of the Dirac neutrality point the drift effect is strongly suppressed. The experiments are in quantitative agreement with a drift-diffusion model of spin transport. △ Less

Submitted 14 April, 2008; v1 submitted 19 February, 2008; originally announced February 2008.

Comments: 4 figures

Electronic spin transport and spin precession in single graphene layers at room temperature

Authors: Nikolaos Tombros, Csaba Jozsa, Mihaita Popinciuc, Harry T. Jonkman, Bart J. van Wees

Abstract: The specific band structure of graphene, with its unique valley structure and Dirac neutrality point separating hole states from electron states has led to the observation of new electronic transport phenomena such as anomalously quantized Hall effects, absence of weak localization and the existence of a minimum conductivity. In addition to dissipative transport also supercurrent transport has a… ▽ More The specific band structure of graphene, with its unique valley structure and Dirac neutrality point separating hole states from electron states has led to the observation of new electronic transport phenomena such as anomalously quantized Hall effects, absence of weak localization and the existence of a minimum conductivity. In addition to dissipative transport also supercurrent transport has already been observed. It has also been suggested that graphene might be a promising material for spintronics and related applications, such as the realization of spin qubits, due to the low intrinsic spin orbit interaction, as well as the low hyperfine interaction of the electron spins with the carbon nuclei. As a first step in the direction of graphene spintronics and spin qubits we report the observation of spin transport, as well as Larmor spin precession over micrometer long distances using single graphene layer based field effect transistors. The non-local spin valve geometry was used, employing four terminal contact geometries with ferromagnetic cobalt electrodes, which make contact to the graphene sheet through a thin oxide layer. We observe clear bipolar (changing from positive to negative sign) spin signals which reflect the magnetization direction of all 4 electrodes, indicating that spin coherence extends underneath all 4 contacts. No significant changes in the spin signals occur between 4.2K, 77K and room temperature. From Hanle type spin precession measurements we extract a spin relaxation length between 1.5 and 2 micron at room temperature, only weakly dependent on charge density, which is varied from n~0 at the Dirac neutrality point to n = 3.6 10^16/m^2. The spin polarization of the ferromagnetic contacts is calculated from the measurements to be around 10%. △ Less

Submitted 13 June, 2007; originally announced June 2007.

Journal ref: Nature 448,571-574 (2007)

Charge ordering signatures in the optical properties of beta-Na0.33V2O5

Authors: C. Presura, M. Popinciuc, P. H. M. van Loosdrecht, D. van der Marel, M. Mostovoy, T. Yamauchi, Y. Ueda

Abstract: Temperature dependent optical spectra are reported for beta-Na0.33V2O5. The sodium ordering transition at T_Na = 240 K, and in particular the charge ordering transition at T_MI = 136 K strongly influence the optical spectra. The metal-insulator transition at \tmi leads to the opening of a psuedogap (\hbarω= 1700 cm-1), and to the appearance of a large number of optical phonons. These observation… ▽ More Temperature dependent optical spectra are reported for beta-Na0.33V2O5. The sodium ordering transition at T_Na = 240 K, and in particular the charge ordering transition at T_MI = 136 K strongly influence the optical spectra. The metal-insulator transition at \tmi leads to the opening of a psuedogap (\hbarω= 1700 cm-1), and to the appearance of a large number of optical phonons. These observations, and the presence of a mid-infrared band (typical for low dimensional metals) strongly suggests that the charge carriers in beta-Na0.33V2O5 are small polarons. △ Less

Submitted 28 November, 2002; originally announced November 2002.

Comments: To be published in PRL

Journal ref: Physical Review Letters 90, 026402 (2003)

Charge and sodium ordering in beta-Na_0.33V_2O_5

Authors: P. H. M. van Loosdrecht, C. N. Presura, M. Popinciuc, D. van der Marel, G. Maris, T. T. M. Palstra, P. J. M. van Bentum, H. Yamada, T. Yamauchi, Y. Ueda

Abstract: Polarized Raman and optical spectra for the quasi one-dimensional metallic vanadate beta-Na0.33V2O3 are reported for various temperatures. The spectra are discussed in the light of the sodium and charge ordering transitions occurring in this material, and demonstrate the presence of strong electron phonon coupling. Polarized Raman and optical spectra for the quasi one-dimensional metallic vanadate beta-Na0.33V2O3 are reported for various temperatures. The spectra are discussed in the light of the sodium and charge ordering transitions occurring in this material, and demonstrate the presence of strong electron phonon coupling. △ Less

Submitted 13 November, 2002; originally announced November 2002.

Comments: To be published in J. Superconductivity: Incorporating Novel Magnetism (december 2002)

Journal ref: J. of Supercond.:Inc. Novel Magn. 15, 587 (2002).