Color Atomic Force Microscopy with on-the-fly Morse parameters mapping
Authors:
Pierre Etienne Allain,
Denis Damiron,
Yuta Miyazaki,
Kohei Kaminishi,
Flavius Vasile Pop,
Dai Kobayashi,
Naruo Sasaki,
Hideki Kawakatsu
Abstract:
Atomic Force Microscopy has enabled 2D imaging at the sub-molecular level, and 3D mapping of the potential field. However, fast identification of the surface still remains a challenging topic. In this paper, as a step towards implementation of such function, we introduce a control scheme and mathematical treatment of the acquired data that enable retrieval of essential information characterizing t…
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Atomic Force Microscopy has enabled 2D imaging at the sub-molecular level, and 3D mapping of the potential field. However, fast identification of the surface still remains a challenging topic. In this paper, as a step towards implementation of such function, we introduce a control scheme and mathematical treatment of the acquired data that enable retrieval of essential information characterizing the potential field, leading to fast acquisition of images with chemical contrast. The control scheme is based on tip sample distance modulation at an angular frequency of $ω$, and null control of the ${1ω}$ component of the self excitation frequency of the oscillator. It is demonstrated that the control is robust in UHV for a frequency well as small as a few Hz/MHz, and that the mathematical treatment results in satisfactory identification of the potential field. Morse potential is chosen as a case study for identifying the Morse parameters per pixel. Atomic features with similar topography were distinguished by differences in the parameters. The decay length parameter was resolved with a resolution of 10 pm. The method was demonstrated on quenched Silicon at a scan rate comparable to normal imaging.
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Submitted 13 September, 2016; v1 submitted 14 July, 2015;
originally announced July 2015.
