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Effects of structure and temperature on the nature of excitons in the Mo0.6W0.4S2 alloys
Authors:
Deepika Poonia,
Nisha Singh,
Jeff J. P. M. Schulpen,
Marco van der Laan,
Sourav Maiti,
Michele Failla,
Sachin Kinge,
Ageeth A. Bol,
Peter Schall,
Laurens D. A. Siebbeles
Abstract:
We have studied the nature of excitons in the transition metal dichalcogenide alloy Mo0.6W0.4 S2, compared to pure MoS2 and WS2 grown by atomic layer deposition (ALD). For this, optical absorption/transmission spectroscopy and time-dependent density functional theory (TDDFT) were used. Effects of temperature on the A and B exciton peak energies and linewidths in the optical transmission spectra we…
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We have studied the nature of excitons in the transition metal dichalcogenide alloy Mo0.6W0.4 S2, compared to pure MoS2 and WS2 grown by atomic layer deposition (ALD). For this, optical absorption/transmission spectroscopy and time-dependent density functional theory (TDDFT) were used. Effects of temperature on the A and B exciton peak energies and linewidths in the optical transmission spectra were compared between the alloy and pure MoS2 and WS2. On increasing the temperature from 25 K to 293 K the energy of the A and B exciton peaks decreases, while their linewidth increases due to exciton-phonon interactions. The exciton-phonon interactions in the alloy are closer to those for MoS2 than WS2. This suggests that the exciton wave functions in the alloy have a larger amplitude on Mo atoms than on W atoms. The experimental absorption spectra could be reproduced by TDDFT calculations. Interestingly, for the alloy the Mo and W atoms had to be distributed over all layers. Conversely, we could not reproduce the experimental alloy spectrum by calculations on a structure with alternating layers, in which every other layer contains only Mo atoms and the layers in between also W atoms. For the latter atomic arrangement, the TDDFT calculations yielded an additional optical absorption peak that could be due to excitons with some charge transfer character. From these results we conclude that ALD yields an alloy in which Mo and W atoms are distributed uniformly among all layers.
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Submitted 24 November, 2021;
originally announced November 2021.
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Unraveling the Photophysics of Liquid-Phase Exfoliated Two-Dimensional ReS2 Nanoflakes
Authors:
Pieter Schiettecatte,
Deepika Poonia,
Ivo Tanghe,
Sourav Maiti,
Michele Failla,
Sachin Kinge,
Zeger Hens,
Laurens D. A. Siebbeles,
Pieter Geiregat
Abstract:
Few-layered transition metal dichalcogenides (TMDs) are increasingly popular materials for optoelectronics and catalysis. Amongst the various types of TMDs available today, rhenium-chalcogenides (ReX2) stand out due to their remarkable electronic structure, such as the occurrence of anisotropic excitons and potential direct bandgap behavior throughout multi-layered stacks. In this letter, we have…
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Few-layered transition metal dichalcogenides (TMDs) are increasingly popular materials for optoelectronics and catalysis. Amongst the various types of TMDs available today, rhenium-chalcogenides (ReX2) stand out due to their remarkable electronic structure, such as the occurrence of anisotropic excitons and potential direct bandgap behavior throughout multi-layered stacks. In this letter, we have analyzed the nature and dynamics of charge carriers in highly crystalline liquid-phase exfoliated ReS2, using a unique combination of optical pump-THz probe and broadband transient absorption spectroscopy. Two distinct time regimes are identified, both of which are dominated by unbound charge carriers despite the high exciton binding energy. In the first time regime, the unbound charge carriers cause an increase and a broadening of the exciton absorption band. In the second time regime, a peculiar narrowing of the excitonic absorption profile is observed, which we assign to the presence of built-in fields and/or charged defects. Our results pave the way to analyze spectrally complex transient absorption measurements on layered TMD materials and indicate the potential for ReS2 to produce mobile free charge carriers, a feat relevant for photovoltaic applications.
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Submitted 20 May, 2021;
originally announced May 2021.
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Emergence of New Materials for Exploiting Highly Efficient Carrier Multiplication in Photovoltaics
Authors:
Sourav Maiti,
Marco van der Laan,
Deepika Poonia,
Peter Schall,
Sachin Kinge,
Laurens D. A. Siebbeles
Abstract:
In conventional solar cell semiconductor materials (predominantly Si) photons with energy higher than the band gap initially generate hot electrons and holes, which subsequently cool down to the band edge by phonon emission. Due to the latter process, the energy of the charge carriers in excess of the band gap is lost as heat and does not contribute to the conversion of solar to electrical power.…
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In conventional solar cell semiconductor materials (predominantly Si) photons with energy higher than the band gap initially generate hot electrons and holes, which subsequently cool down to the band edge by phonon emission. Due to the latter process, the energy of the charge carriers in excess of the band gap is lost as heat and does not contribute to the conversion of solar to electrical power. If the excess energy is more than the band gap it can in principle be utilized through a process known as carrier multiplication (CM) in which a single absorbed photon generates two (or more) pairs of electrons and holes. Thus, through CM the photon energy above twice the band gap enhances the photocurrent of a solar cell. In this review, we discuss recent progress in CM research in terms of fundamental understanding, emergence of new materials for efficient CM, and CM based solar cell applications. Based on our current understanding, the CM threshold can get close to the minimal value of twice the band gap in materials where a photon induces an asymmetric electronic transition from a deeper valence band or to a higher conduction band. In addition, the material must have a low exciton binding energy and high charge carrier mobility, so that photoexcitation leads directly to the formation of free charges that can readily be extracted at external electrodes of a photovoltaic device. Percolative networks of coupled PbSe quantum dots, Sn/Pb based halide perovskites, and transition metal dichalcogenides such as MoTe2 fulfill these requirements to a large extent. These findings point towards promising prospects for further development of new materials for highly efficient photovoltaics.
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Submitted 19 August, 2020; v1 submitted 18 August, 2020;
originally announced August 2020.
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Tent--Shaped Surface Morphologies of Silicon: Texturization by Metal Induced Etching
Authors:
Priyanka Yogi,
Deepika Poonia,
Suryakant Mishra,
Shailendra K. Saxena,
Swarup Roy,
Pankaj R Sagdeo,
Rajesh Kumar
Abstract:
Nano--metal/semiconductor junction dependent porosification of silicon (Si) has been studied here. The silicon (Si) nanostructures (NS) have been textured on n-- and p-- type silicon wafers using Ag and Au metal nano particles induced chemical etching. The combinations of n--Si/Ag and p--Si/Au form ohmic contact and result in the same texturization on the Si surface on porosification where tent--s…
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Nano--metal/semiconductor junction dependent porosification of silicon (Si) has been studied here. The silicon (Si) nanostructures (NS) have been textured on n-- and p-- type silicon wafers using Ag and Au metal nano particles induced chemical etching. The combinations of n--Si/Ag and p--Si/Au form ohmic contact and result in the same texturization on the Si surface on porosification where tent--shaped morphology has been observed consistently with n-- and p--type Si. Whereas, porosification result in different surface texturization for other two combinations (p--Si/Ag and n--Si/Au) where Schottkey contacts are formed. Quantitative analysis have been done using ImageJ to process the SEM images of SiNS, which confirms that the tent like SiNS are formed when etching of silicon wafer is done by AgNPs and AuNPs on n and p type Si wafer respectively. These easily prepared sharp tent--shaped Si NSs can be used for enhanced field emission applications.
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Submitted 7 May, 2017;
originally announced May 2017.
