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The influence of electron-doping on the ground state of (Sr{1-x}La{x})2IrO4
Authors:
Xiang Chen,
Tom Hogan,
D. Walkup,
Wenwen Zhou,
M. Pokharel,
Mengliang Yao,
Wei Tian,
Thomas Z. Ward,
Y. Zhao,
D. Parshall,
C. Opeil,
J. W. Lynn,
Vidya Madhavan,
Stephen D. Wilson
Abstract:
The evolution of the electronic properties of electron-doped (Sr{1-x}La{x})2IrO4 is experimentally explored as the doping limit of La is approached. As electrons are introduced, the electronic ground state transitions from a spin-orbit Mott phase into an electronically phase separated state, where long-range magnetic order vanishes beyond x = 0.02 and charge transport remains percolative up to the…
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The evolution of the electronic properties of electron-doped (Sr{1-x}La{x})2IrO4 is experimentally explored as the doping limit of La is approached. As electrons are introduced, the electronic ground state transitions from a spin-orbit Mott phase into an electronically phase separated state, where long-range magnetic order vanishes beyond x = 0.02 and charge transport remains percolative up to the limit of La substitution (x~0.06). In particular, the electronic ground state remains inhomogeneous even beyond the collapse of the parent state's long-range antiferromagnetic order, while persistent short-range magnetism survives up to the highest La-substitution levels. Furthermore, as electrons are doped into Sr2IrO4, we observe the appearance of a low temperature magnetic glass-like state intermediate to the complete suppression of antiferromagnetic order. Universalities and differences in the electron-doped phase diagrams of single layer and bilayer Ruddlesden-Popper strontium iridates are discussed.
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Submitted 5 August, 2015; v1 submitted 24 June, 2015;
originally announced June 2015.
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Thermoelectric Properties of Nanocomposite Heavy Fermion CeCu6
Authors:
Mani Pokharel,
Tulashi Dahal,
Zhifeng Ren,
Cyril Opeil
Abstract:
Samples of heavy fermion compound CeCu6 were prepared by hot-press technique. Temperature-dependent (5-300 K) thermoelectric transport properties of the samples were measured. The dimensionless figure-of-merit (ZT) was optimized by varying the hot-pressing temperature. Our measurements of thermal conductivity show that the lowest hot pressing temperature (450 C) produces the lowest thermal conduct…
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Samples of heavy fermion compound CeCu6 were prepared by hot-press technique. Temperature-dependent (5-300 K) thermoelectric transport properties of the samples were measured. The dimensionless figure-of-merit (ZT) was optimized by varying the hot-pressing temperature. Our measurements of thermal conductivity show that the lowest hot pressing temperature (450 C) produces the lowest thermal conductivity. Electrical resistivity increases significantly while the Seebeck coefficient decreases with decrease in the hot pressing temperature. As the hot-pressing temperature decreases, electronic contribution to the total thermal conductivity decreased more rapidly than the lattice contribution did. As a result, for lower hot-pressing temperature the gain in thermal conductivity reduction was offset by the loss in power factor. Our ZT calculations show a broad peak with a maximum value of 0.024 at 60 K for the sample hot pressed at 800 C. The pronounced low-temperature ZT peak emphasizes the importance of this heavy fermion system as a potential p-type thermoelectric for solid state cooling applications.
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Submitted 13 December, 2013; v1 submitted 11 December, 2013;
originally announced December 2013.
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Carrier localization and electronic phase separation in a doped spin-orbit driven Mott phase in Sr3(Ir1-xRux)2O7
Authors:
Chetan Dhital,
Tom Hogan,
Wenwen Zhou,
Xiang Chen,
Zhensong Ren,
Mani Pokharel,
Yoshinori Okada,
M. Heine,
Wei Tian,
Z. Yamani,
C. Opeil,
J. S. Helton,
J. W. Lynn,
Ziqiang Wang,
Vidya Madhavan,
Stephen D. Wilson
Abstract:
Interest in many strongly spin-orbit coupled 5d-transition metal oxide insulators stems from mapping their electronic structures to a J=1/2 Mott phase. One of the hopes is to establish their Mott parent states and explore these systems' potential of realizing novel electronic states upon carrier doping. However, once doped, little is understood regarding the role of their reduced Coulomb interacti…
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Interest in many strongly spin-orbit coupled 5d-transition metal oxide insulators stems from mapping their electronic structures to a J=1/2 Mott phase. One of the hopes is to establish their Mott parent states and explore these systems' potential of realizing novel electronic states upon carrier doping. However, once doped, little is understood regarding the role of their reduced Coulomb interaction U relative to their strongly correlated 3d-electron cousins. Here we show that, upon hole-doping a candidate J=1/2 Mott insulator, carriers remain localized within a nanoscale phase separated ground state. A percolative metal-insulator transition occurs with interplay between localized and itinerant regions, stabilizing an antiferromagnetic metallic phase beyond the critical region. Our results demonstrate a surprising parallel between doped 5d- and 3d-electron Mott systems and suggest either through the near degeneracy of nearby electronic phases or direct carrier localization that U is essential to the carrier response of this doped spin-orbit Mott insulator.
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Submitted 14 March, 2014; v1 submitted 4 November, 2013;
originally announced November 2013.
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Enhancing the Figure of Merit in Te-doped FeSb2 through nanostructuring
Authors:
M. Pokharel,
H. Z. Zhao,
M. Koirala,
Z. F. Ren,
C. Opeil
Abstract:
We study the thermoelectric properties of Te-doped FeSb2 nanostructured samples. Four samples of stoichiometry FeSb1.84Te0.16 were prepared by a hot press method at temperatures of 200, 400, 500, and 600 oC. Te-doping enhances the dimensionless figure of merit (ZT) on FeSb2 via two mechanisms. First, a semiconductor to metal transition is induced, which enhances the value of the power factor at lo…
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We study the thermoelectric properties of Te-doped FeSb2 nanostructured samples. Four samples of stoichiometry FeSb1.84Te0.16 were prepared by a hot press method at temperatures of 200, 400, 500, and 600 oC. Te-doping enhances the dimensionless figure of merit (ZT) on FeSb2 via two mechanisms. First, a semiconductor to metal transition is induced, which enhances the value of the power factor at low-temperatures. Second, the thermal conductivity, which was already reduced in nanostructured FeSb2 samples, is further reduced by increased point defect scattering through the n type substitution of Sb site by Te atom. The combined effect results in a ZT = 0.022 at 100 K, an increase of 62% over the ZT value for the optimized Te-doped single crystal sample. Hall coefficient and electrical resistivity measurements reveal a decreased mobility and increased concentration of the carriers in the doped sample.
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Submitted 15 March, 2013;
originally announced March 2013.
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Phonon Drag Effect in Nanocomposite FeSb2
Authors:
Mani Pokharel,
Huaizhou Zhao,
Kevin Lukas,
Bogdan Mihaila,
Zhifeng Ren,
Cyril Opeil
Abstract:
We study the temperature dependence of thermoelectric transport properties of four FeSb2 nanocomposite samples with different grain sizes. The comparison of the single crystals and nanocomposites of varying grain size indicates the presence of substantial phonon drag effects in this system contributing to a large Seebeck coefficient at low temperature. As the grain size decreases, the increased ph…
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We study the temperature dependence of thermoelectric transport properties of four FeSb2 nanocomposite samples with different grain sizes. The comparison of the single crystals and nanocomposites of varying grain size indicates the presence of substantial phonon drag effects in this system contributing to a large Seebeck coefficient at low temperature. As the grain size decreases, the increased phonon scattering at the grain boundaries leads to a suppression of the phonon-drag effect, resulting in a much smaller peak value of the Seebeck coefficient in the nanostructured bulk materials. As a consequence, the ZT values are not improved significantly even though the thermal conductivity is drastically reduced.
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Submitted 10 October, 2012;
originally announced October 2012.
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Spin ordering and electronic texture in the bilayer iridate Sr$_3$Ir$_2$O$_7$
Authors:
Chetan Dhital,
Sovit Khadka,
Z. Yamani,
Clarina de la Cruz,
T. C. Hogan,
S. M. Disseler,
Mani Pokharel,
K. C. Lukas,
Wei Tian,
C. P. Opeil,
Ziqiang Wang,
Stephen D. Wilson
Abstract:
Through a neutron scattering, charge transport, and magnetization study, the correlated ground state in the bilayer iridium oxide Sr$_3$Ir$_2$O$_7$ is explored. Our combined results resolve scattering consistent with a high temperature magnetic phase that persists above 600 K, reorients at the previously defined $T_{AF}=280$ K, and coexists with an electronic ground state whose phase behavior sugg…
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Through a neutron scattering, charge transport, and magnetization study, the correlated ground state in the bilayer iridium oxide Sr$_3$Ir$_2$O$_7$ is explored. Our combined results resolve scattering consistent with a high temperature magnetic phase that persists above 600 K, reorients at the previously defined $T_{AF}=280$ K, and coexists with an electronic ground state whose phase behavior suggests the formation of a fluctuating charge or orbital phase that freezes below $T^{*}\approx70$ K. Our study provides a window into the emergence of multiple electronic order parameters near the boundary of the metal to insulator phase transition of the 5d $J_{eff}=1/2$ Mott phase.
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Submitted 9 September, 2012; v1 submitted 5 June, 2012;
originally announced June 2012.
