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Insertion of CdSe quantumdots in ZnSe nanowires : MBE growth and microstructure analysis
Authors:
Martien Den Hertog,
Miryam Elouneg-Jamroz,
Edith Bellet-Amalric,
Samir Bounouar,
Catherine Bougerol,
Régis André,
Yann Genuist,
Jean Philippe Poizat,
Kuntheak Kheng,
Serge Tatarenko
Abstract:
ZnSe nanowire growth has been successfully achieved on ZnSe (100) and (111)B buffer layers deposited on GaAs substrates. Cubic [100] oriented ZnSe nanowires or [0001] oriented hexagonal NWs are obtained on (100) substrates while [111] oriented cubic mixed with [0001] oriented hexagonal regions are obtained on (111)B substrates. Most of the NWs are perpendicular to the surface in the last case. CdS…
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ZnSe nanowire growth has been successfully achieved on ZnSe (100) and (111)B buffer layers deposited on GaAs substrates. Cubic [100] oriented ZnSe nanowires or [0001] oriented hexagonal NWs are obtained on (100) substrates while [111] oriented cubic mixed with [0001] oriented hexagonal regions are obtained on (111)B substrates. Most of the NWs are perpendicular to the surface in the last case. CdSe quantum dots were successfully incorporated in the ZnSe NWs as demonstrated by transmission electron microscopy, energy filtered TEM and high angle annular dark field scanning TEM measurements.
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Submitted 30 July, 2012;
originally announced July 2012.
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Polarity determination in ZnSe nanowires by HAADF STEM
Authors:
Martien Den Hertog,
Miryam Elouneg-Jamroz,
Edith Bellet-Amalric,
Samir Bounouar,
Catherine Bougerol,
Régis André,
Yann Genuist,
Jean Philippe Poizat,
Kuntheak Kheng,
Serge Tatarenko
Abstract:
High angle annular dark field scanning transmission electron microscopy is used to analyze the polarity of ZnSe nanowires grown, by molecular beam epitaxy, on GaAs substrates. The experimental results are compared to simulated images in order to verify possible experimental artefacts. In this work we show that for this type of nano-objects, a residual tilt of the specimen below 15 mrad, away from…
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High angle annular dark field scanning transmission electron microscopy is used to analyze the polarity of ZnSe nanowires grown, by molecular beam epitaxy, on GaAs substrates. The experimental results are compared to simulated images in order to verify possible experimental artefacts. In this work we show that for this type of nano-objects, a residual tilt of the specimen below 15 mrad, away from the crystallographic zone axis does not impair the interpretation of the experimental images.
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Submitted 20 July, 2012;
originally announced July 2012.
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Monitoring stimulated emission at the single photon level in one-dimensional atoms
Authors:
D. Valente,
S. Portolan,
G. Nogues,
J. P. Poizat,
M. Richard,
J. M. Gérard,
M. F. Santos,
A. Auffèves
Abstract:
We theoretically investigate signatures of stimulated emission at the single photon level for a two-level atom interacting with a one-dimensional light field. We consider the transient regime where the atom is initially excited, and the steady state regime where the atom is continuously driven with an external pump. The influence of pure dephasing is studied, clearly showing that these effects can…
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We theoretically investigate signatures of stimulated emission at the single photon level for a two-level atom interacting with a one-dimensional light field. We consider the transient regime where the atom is initially excited, and the steady state regime where the atom is continuously driven with an external pump. The influence of pure dephasing is studied, clearly showing that these effects can be evidenced with state of the art solid state devices. We finally propose a scheme to demonstrate the stimulation of one optical transition by monitoring another one, in three-level one-dimensional atoms.
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Submitted 14 January, 2012; v1 submitted 1 July, 2011;
originally announced July 2011.
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Controlling the dynamics of a coupled atom-cavity system by pure dephasing : basics and potential applications in nanophotonics
Authors:
A. Auffèves,
D. Gerace,
J. M. Gérard,
M. Franca Santos,
L. C. Andreani,
J. P. Poizat
Abstract:
The influence of pure dephasing on the dynamics of the coupling between a two-level atom and a cavity mode is systematically addressed. We have derived an effective atom-cavity coupling rate that is shown to be a key parameter in the physics of the problem, allowing to generalize the known expression for the Purcell factor to the case of broad emitters, and to define strategies to optimize the per…
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The influence of pure dephasing on the dynamics of the coupling between a two-level atom and a cavity mode is systematically addressed. We have derived an effective atom-cavity coupling rate that is shown to be a key parameter in the physics of the problem, allowing to generalize the known expression for the Purcell factor to the case of broad emitters, and to define strategies to optimize the performances of broad emitters-based single photon sources. Moreover, pure dephasing is shown to be able to restore lasing in presence of detuning, a further demonstration that decoherence can be seen as a fundamental resource in solid-state cavity quantum electrodynamics, offering appealing perspectives in the context of advanced nano-photonic devices.
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Submitted 28 June, 2010; v1 submitted 19 February, 2010;
originally announced February 2010.
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Continuous-wave versus time-resolved measurements of Purcell-factors for quantum dots in semiconductor microcavities
Authors:
M. Munsch,
A. Mosset,
A. Auffèves,
Signe Seidelin,
J. P. Poizat,
J. -M. Gérard,
A. Lemaître,
I. Sagnes,
P. Senellart
Abstract:
The light emission rate of a single quantum dot can be drastically enhanced by embedding it in a resonant semiconductor microcavity. This phenomenon is known as the Purcell effect, and the coupling strength between emitter and cavity can be quantified by the Purcell factor. The most natural way for probing the Purcell effect is a time-resolved measurement. However, this approach is not always th…
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The light emission rate of a single quantum dot can be drastically enhanced by embedding it in a resonant semiconductor microcavity. This phenomenon is known as the Purcell effect, and the coupling strength between emitter and cavity can be quantified by the Purcell factor. The most natural way for probing the Purcell effect is a time-resolved measurement. However, this approach is not always the most convenient one, and alternative approaches based on a continuous-wave measurement are often more appropriate. Various signatures of the Purcell effect can indeed be observed using continuous-wave measurements (increase of the pump rate needed to saturate the quantum dot emission, enhancement of its emission rate at saturation, change of its radiation pattern), signatures which are encountered when a quantum dot is put on-resonance with the cavity mode. All these observations potentially allow one to estimate the Purcell factor. In this paper, we carry out these different types of measurements for a single quantum dot in a pillar microcavity and we compare their reliability. We include in the data analysis the presence of independent, non-resonant emitters in the microcavity environment, which are responsible for a part of the observed fluorescence.
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Submitted 3 June, 2009;
originally announced June 2009.
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Fast exciton spin relaxation in single quantum dots
Authors:
I. Favero,
Guillaume Cassabois,
C. Voisin,
C. Delalande,
Ph. Roussignol,
R. Ferreira,
C. Couteau,
J. P. Poizat,
J. M. Gérard
Abstract:
Exciton spin relaxation is investigated in single epitaxially grown semiconductor quantum dots in order to test the expected spin relaxation quenching in this system. We study the polarization anisotropy of the photoluminescence signal emitted by isolated quantum dots under steady-state or pulsed non-resonant excitation. We find that the longitudinal exciton spin relaxation time is strikingly sh…
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Exciton spin relaxation is investigated in single epitaxially grown semiconductor quantum dots in order to test the expected spin relaxation quenching in this system. We study the polarization anisotropy of the photoluminescence signal emitted by isolated quantum dots under steady-state or pulsed non-resonant excitation. We find that the longitudinal exciton spin relaxation time is strikingly short ($\leq$100 ps) even at low temperature. This result breaks down the picture of a frozen exciton spin in quantum dots.
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Submitted 9 May, 2005;
originally announced May 2005.
