-
A hole-Cr$^{+}$ nano-magnet in a semiconductor quantum dot
Authors:
V. Tiwari,
M. Arino,
S. Gupta,
M. Morita,
T. Inoue,
D. Caliste,
P. Pochet,
H. Boukari,
S. Kuroda,
L. Besombes
Abstract:
We study a new diluted magnetic semiconductor system based on the spin of the ionized acceptor Cr$^+$. We show that the negatively charged Cr$^+$ ion, an excited state of the Cr in II-VI semiconductor, can be stable when inserted in a CdTe quantum dot (QD). The Cr$^+$ attracts a heavy-hole in the QD and form a stable hole-Cr$^+$ complex. Optical probing of this system reveals a ferromagnetic coupl…
▽ More
We study a new diluted magnetic semiconductor system based on the spin of the ionized acceptor Cr$^+$. We show that the negatively charged Cr$^+$ ion, an excited state of the Cr in II-VI semiconductor, can be stable when inserted in a CdTe quantum dot (QD). The Cr$^+$ attracts a heavy-hole in the QD and form a stable hole-Cr$^+$ complex. Optical probing of this system reveals a ferromagnetic coupling between heavy-holes and Cr$^+$ spins. At low temperature, the thermalization on the ground state of the hole-Cr$^+$ system with parallel spins prevents the optical recombination of the excess electron on the 3$d$ shell of the atom. We study the dynamics of the nano-magnet formed by the hole-Cr$^+$ exchange interaction. The ferromagnetic ground states with M$_z$=$\pm$4 can be controlled by resonant optical pumping and a spin relaxation time in the 20 $μ$s range is obtained at T=4.2 K. This spin memory at zero magnetic field is limited by the interaction with phonons.
△ Less
Submitted 28 July, 2021; v1 submitted 7 July, 2021;
originally announced July 2021.
-
Dispersing and semi-flat bands in the wide band gap two-dimensional semiconductor bilayer silicon oxide
Authors:
G. Kremer,
J. C. Alvarez-Quiceno,
T. Pierron,
C. González,
M. Sicot,
B. Kierren,
L. Moreau,
J. E. Rault,
P. Le Fèvre,
F. Bertran,
Y. J. Dappe,
J. Coraux,
P. Pochet,
Y. Fagot-Revurat
Abstract:
Epitaxial bilayer silicon oxide is a transferable two-dimensional material predicted to be a wide band gap semiconductor, with potential applications for deep UV optoelectronics, or as a building block of van der Waals heterostructures. The prerequisite to any sort of such applications is the knowledge of the electronic band structure, which we unveil using angle-resolved photoemission spectroscop…
▽ More
Epitaxial bilayer silicon oxide is a transferable two-dimensional material predicted to be a wide band gap semiconductor, with potential applications for deep UV optoelectronics, or as a building block of van der Waals heterostructures. The prerequisite to any sort of such applications is the knowledge of the electronic band structure, which we unveil using angle-resolved photoemission spectroscopy and rationalise with the help of density functional theory calculations. We discover dispersing bands related to electronic delocalisation within the top and bottom planes of the material, with two linear crossings reminiscent of those predicted in bilayer AA-stacked graphene, and semi-flat bands stemming from the chemical bridges between the two planes. This band structure is robust against exposure to air, and can be controled by exposure to oxygen. We provide an experimental lower-estimate of the band gap size of 5 eV and predict a full gap of 7.36 eV using density functional theory calculations.
△ Less
Submitted 6 May, 2021; v1 submitted 29 November, 2020;
originally announced November 2020.
-
Selection rules of twistronic angles in 2D material flakes via dislocation theory
Authors:
Shuze Zhu,
Emil Annevelink,
Pascal Pochet,
Harley T. Johnson
Abstract:
Interlayer rotation angle couples strongly to the electronic states of twisted van der Waals layers. However, not every angle is energetically favorable. Recent experiments on rotation-tunable electronics reveal the existence of a discrete set of angles at which the rotation-tunable electronics assume the most stable configurations. Nevertheless, a quantitative map for locating these intrinsically…
▽ More
Interlayer rotation angle couples strongly to the electronic states of twisted van der Waals layers. However, not every angle is energetically favorable. Recent experiments on rotation-tunable electronics reveal the existence of a discrete set of angles at which the rotation-tunable electronics assume the most stable configurations. Nevertheless, a quantitative map for locating these intrinsically preferred twist angles in twisted bilayer system has not been available, posing challenges for the on-demand design of twisted electronics that are intrinsically stable at desired twist angles. Here we reveal a simple mapping between intrinsically preferred twist angles and geometry of the twisted bilayer system, in the form of geometric scaling laws for a wide range of intrinsically preferred twist angles as a function of only geometric parameters of the rotating flake on a supporting layer. We reveal these scaling laws for triangular and hexagonal flakes since they frequently appear in chemical vapor deposition growth. We also present a general method for handling arbitrary flake geometry. Such dimensionless scaling laws possess universality for all kinds of two-dimensional material bilayer systems, providing abundant opportunities for the on-demand design of intrinsic "twistronics". For example, the set of increasing magic-sizes that intrinsically prefers zero-approaching sequence of multiple magic-angles in bilayer graphene system can be revealed.
△ Less
Submitted 29 September, 2020;
originally announced September 2020.
-
Transferability of neural network potentials for varying stoichiometry: phonons and thermal conductivity of Mn$_x$Ge$_y$ compounds
Authors:
Claudia Mangold,
Shunda Chen,
Giuseppe Barbalinardo,
Joerg Behler,
Pascal Pochet,
Konstantinos Termentzidis,
Yang Han,
Laurent Chaput,
David Lacroix,
Davide Donadio
Abstract:
Germanium manganese compounds exhibit a variety of stable and metastable phases with different stoichiometry. These materials entail interesting electronic, magnetic and thermal properties both in their bulk form and as heterostructures. Here we develop and validate a transferable machine learning potential, based on the high-dimensional neural network formalism, to enable the study of Mn$_x$Ge…
▽ More
Germanium manganese compounds exhibit a variety of stable and metastable phases with different stoichiometry. These materials entail interesting electronic, magnetic and thermal properties both in their bulk form and as heterostructures. Here we develop and validate a transferable machine learning potential, based on the high-dimensional neural network formalism, to enable the study of Mn$_x$Ge$_y$ materials over a wide range of compositions. We show that a neural network potential fitted on a minimal training set reproduces successfully the structural and vibrational properties and the thermal conductivity of systems with different local chemical environments, and it can be used to predict phononic effects in nanoscale heterostructures.
△ Less
Submitted 19 May, 2020;
originally announced May 2020.
-
Growth, charge and thermal transport of flowered graphene
Authors:
Alessandro Cresti,
Jesús Carrete,
Hanako Okuno,
Tao Wang,
Georg K. H. Madsen,
Natalio Mingo,
Pascal Pochet
Abstract:
We report on the structural and transport properties of the smallest dislocation loop in graphene, known as a flower defect. First, by means of advanced experimental imaging techniques, we deduce how flower defects are formed during recrystallization of chemical vapor deposited graphene. We propose that the flower defects arise from a bulge type mechanism in which the flower domains are the grains…
▽ More
We report on the structural and transport properties of the smallest dislocation loop in graphene, known as a flower defect. First, by means of advanced experimental imaging techniques, we deduce how flower defects are formed during recrystallization of chemical vapor deposited graphene. We propose that the flower defects arise from a bulge type mechanism in which the flower domains are the grains left over by dynamic recrystallisation. Next, in order to evaluate the use of such defects as possible building blocks for all-graphene electronics, we combine multiscale modeling tools to investigate the structure and the electron and phonon transport properties of large monolayer graphene samples with a random distribution of flower defects. For large enough flower densities, we find that electron transport is strongly suppressed while, surprisingly, hole transport remains almost unaffected. These results suggest possible applications of flowered graphene for electron energy filtering. For the same defect densities, phonon transport is reduced by orders of magnitude as elastic scattering by defects becomes dominant. Heat transport by flexural phonons, key in graphene, is largely suppressed even for very low concentrations.
△ Less
Submitted 11 February, 2020;
originally announced February 2020.
-
Single artificial atoms in silicon emitting at telecom wavelengths
Authors:
W. Redjem,
A. Durand,
T. Herzig,
A. Benali,
S. Pezzagna,
J. Meijer,
A. Yu. Kuznetsov,
H. S. Nguyen,
S. Cueff,
J. -M. Gérard,
I. Robert-Philip,
B. Gil,
D. Caliste,
P. Pochet,
M. Abbarchi,
V. Jacques,
A. Dréau,
G. Cassabois
Abstract:
Given its unrivaled potential of integration and scalability, silicon is likely to become a key platform for large-scale quantum technologies. Individual electron-encoded artificial atoms either formed by impurities or quantum dots have emerged as a promising solution for silicon-based integrated quantum circuits. However, single qubits featuring an optical interface needed for large-distance exch…
▽ More
Given its unrivaled potential of integration and scalability, silicon is likely to become a key platform for large-scale quantum technologies. Individual electron-encoded artificial atoms either formed by impurities or quantum dots have emerged as a promising solution for silicon-based integrated quantum circuits. However, single qubits featuring an optical interface needed for large-distance exchange of information have not yet been isolated in such a prevailing semiconductor. Here we show the isolation of single optically-active point defects in a commercial silicon-on-insulator wafer implanted with carbon atoms. These artificial atoms exhibit a bright, linearly polarized single-photon emission at telecom wavelengths suitable for long-distance propagation in optical fibers. Our results demonstrate that despite its small bandgap (~ 1.1 eV) a priori unfavorable towards such observation, silicon can accommodate point defects optically isolable at single scale, like in wide-bandgap semiconductors. This work opens numerous perspectives for silicon-based quantum technologies, from integrated quantum photonics to quantum communications and metrology.
△ Less
Submitted 7 January, 2020;
originally announced January 2020.
-
Electronic band structure of ultimately thin silicon oxide on Ru(0001)
Authors:
G. Kremer,
J. C. Alvarez-Quiceno,
S. Lisi,
T. Pierron,
C. González Pascual,
M. Sicot,
B. Kierren,
D. Malterre,
J. Rault,
P. Le Fèvre,
F. Bertran,
Y. J. Dappe,
J. Coraux,
P. Pochet,
Y. Fagot-Revurat
Abstract:
Silicon oxide can be formed in a crystalline form, when prepared on a metallic substrate. It is a candidate support catalyst and possibly the ultimately-thin version of a dielectric host material for two-dimensional materials (2D) and heterostructures. We determine the atomic structure and chemical bonding of the ultimately thin version of the oxide, epitaxially grown on Ru(0001). In particular, w…
▽ More
Silicon oxide can be formed in a crystalline form, when prepared on a metallic substrate. It is a candidate support catalyst and possibly the ultimately-thin version of a dielectric host material for two-dimensional materials (2D) and heterostructures. We determine the atomic structure and chemical bonding of the ultimately thin version of the oxide, epitaxially grown on Ru(0001). In particular, we establish the existence of two sub-lattices defined by metal-oxygen-silicon bridges involving inequivalent substrate sites. We further discover four electronic bands below Fermi level, at high binding energies, two of them forming a Dirac cone at K point, and two others forming semi-flat bands. While the latter two correspond to hybridized states between the oxide and the metal, the former relate to the topmost silicon-oxygen plane, which is not directly coupled to the substrate. Our analysis is based on high resolution X-ray photoelectron spectroscopy, angle-resolved photoemission spectroscopy, scanning tunneling microscopy, and density functional theory calculations.
△ Less
Submitted 12 February, 2019;
originally announced February 2019.
-
Toward Moiré engineering in 2D materials via dislocation theory
Authors:
P. Pochet,
B. McGuigan,
J. Coraux,
H. T. Johnson
Abstract:
We present a framework that explains the strong connection in 2D materials between mechanics and electronic structure, via dislocation theory. Within this framework, Moiré patterns created by layered 2D materials may be understood as dislocation arrays, and vice versa. The dislocations are of a unique type that we describe as van der Waals dislocations, for which we present a complete geometrical…
▽ More
We present a framework that explains the strong connection in 2D materials between mechanics and electronic structure, via dislocation theory. Within this framework, Moiré patterns created by layered 2D materials may be understood as dislocation arrays, and vice versa. The dislocations are of a unique type that we describe as van der Waals dislocations, for which we present a complete geometrical description, connected to both stretch and twist Moiré patterns. A simple computational scheme, which reduces the complexity of the electronic interaction between layers in order to make the problem computationally tractable, is introduced to simulate these dislocation arrays, allowing us to predict and explain all of the observed Moiré patterns in 2D material systems within a unique framework. We extend this analysis as well to defects in Moiré patterns, which have been reported recently, and which are the result of defects of the same symmetry in the constituent 2D material layers. Finally, we show that linear defects in the Moiré space can be viewed as unidimensional topological states, and can be engineered using our framework
△ Less
Submitted 29 September, 2017;
originally announced September 2017.
-
Millimeter-scale layered MoSe2 grown on sapphire and evidence for negative magnetoresistance
Authors:
M. T. Dau,
C. Vergnaud,
A. Marty,
F. Rortais,
C. Beigné,
H. Boukari,
E. Bellet-Amalric,
V. Guigoz,
O. Renault,
C. Alvarez,
H. Okuno,
P. Pochet,
M. Jamet
Abstract:
Molecular beam epitaxy technique has been used to deposit a single layer and a bilayer of MoSe 2 on sapphire. Extensive characterizations including in-situ and ex-situ measurements show that the layered MoSe 2 grows in a scalable manner on the substrate and reveals characteristics of a stoichiometric 2H-phase. The layered MoSe 2 exhibits polycrystalline features with domains separated by defects a…
▽ More
Molecular beam epitaxy technique has been used to deposit a single layer and a bilayer of MoSe 2 on sapphire. Extensive characterizations including in-situ and ex-situ measurements show that the layered MoSe 2 grows in a scalable manner on the substrate and reveals characteristics of a stoichiometric 2H-phase. The layered MoSe 2 exhibits polycrystalline features with domains separated by defects and boundaries. Temperature and magnetic field dependent resistivity measurements unveil a carrier hopping character described within two-dimensional variable range hopping mechanism. Moreover, a negative magnetoresistance was observed, stressing a fascinating feature of the charge transport under the application of a magnetic field in the layered MoSe 2 system. This negative magnetoresistance observed at millimeter-scale is similar to that observed recently at room temperature inWS2 flakes at a micrometer scale [Zhang et al., Appl. Phys. Lett. 108, 153114 (2016)]. This scalability highlights the fact that the underlying physical mechanism is intrinsic to these two-dimensional materials and occurs at very short scale.
△ Less
Submitted 16 February, 2017;
originally announced February 2017.
-
Structural, electronic, and optical properties of the C-C complex in bulk silicon from first principles
Authors:
Dilyara Timerkaeva,
Claudio Attaccalite,
Gilles Brenet,
Damien Caliste,
Pascal Pochet
Abstract:
The structure of the CiCs complex in silicon has long been the subject of debate. Numerous theoretical and experimental studies have attempted to shed light on the properties of these defects that are at the origin of the light emitting G-center. These defects are relevant for applications in lasing, and it would be advantageous to control their formation and concentration in bulk silicon. It is t…
▽ More
The structure of the CiCs complex in silicon has long been the subject of debate. Numerous theoretical and experimental studies have attempted to shed light on the properties of these defects that are at the origin of the light emitting G-center. These defects are relevant for applications in lasing, and it would be advantageous to control their formation and concentration in bulk silicon. It is therefore essential to understand their structural and electronic properties. In this paper, we present the structural, electronic, and optical properties of four possible configurations of the CiCs complex in bulk silicon, namely the A-, B-, C-, and D-forms. The configurations were studied by density functional theory (DFT) and many-body perturbation theory (MBPT). Our results suggest that the C-form was misinterpreted as a B-form in some experiments. Our optical investigation also tends to exclude any contribution of A- and B-forms to light emission. Taken together, our results suggest that the C-form could play an important role in heavily carbon-doped silicon.
△ Less
Submitted 5 September, 2018; v1 submitted 8 February, 2017;
originally announced February 2017.
-
Toward III-V/Si co-integration by controlling biatomic steps on hydrogenated Si(001)
Authors:
M. Martin,
D. Caliste,
R. Cipro,
R. Alcotte,
J. Moeyaert,
S. David,
F. Bassani,
T. Cerba,
Y. Bogumilowicz,
E. Sanchez,
Z. Ye,
X. Y. Bao,
J. B. Pin,
T. Baron,
P. Pochet
Abstract:
The integration of III-V on silicon is still a hot topic as it will open up a way to co-integrate Si CMOS logic with photonic vices. To reach this aim, several hurdles should be solved, and more particularly the generation of antiphase boundaries (APBs) at the III-V/Si(001) interface. Density functional theory (DFT) has been used to demonstrate the existence of a double-layer steps on nominal Si(0…
▽ More
The integration of III-V on silicon is still a hot topic as it will open up a way to co-integrate Si CMOS logic with photonic vices. To reach this aim, several hurdles should be solved, and more particularly the generation of antiphase boundaries (APBs) at the III-V/Si(001) interface. Density functional theory (DFT) has been used to demonstrate the existence of a double-layer steps on nominal Si(001) which is formed during annealing under proper hydrogen chemical potential. This phenomenon could be explained by the formation of dimer vacancy lines which could be responsible for the preferential and selective etching of one type of step leading to the double step surface creation. To check this hypothesis, different experiments have been carried in an industrial 300 mm MOCVD where the total pressure during the anneal step of Si(001) surface has been varied. Under optimized conditions, an APBs-free GaAs layer was grown on a nominal Si(001) surface paving the way for III-V integration on silicon industrial platform.
△ Less
Submitted 27 January, 2017;
originally announced January 2017.
-
Revisiting the domain model for lithium intercalated graphite
Authors:
Sridevi Krishnan,
Gilles Brenet,
Eduardo Machado-Charry,
Damien Caliste,
Luigi Genovese,
Thierry Deutsch,
Pascal Pochet
Abstract:
In this letter, we study the stability of the domain model for lithium intercalated graphite in stages III and II by means of Density Functional Theory and Kinetic Lattice Monte Carlo simulations. We find that the domain model is either thermodynamically or kinetically stable when compared to the standard model in stages III and II. The existence of domains in the intercalation sequence is well su…
▽ More
In this letter, we study the stability of the domain model for lithium intercalated graphite in stages III and II by means of Density Functional Theory and Kinetic Lattice Monte Carlo simulations. We find that the domain model is either thermodynamically or kinetically stable when compared to the standard model in stages III and II. The existence of domains in the intercalation sequence is well supported by recent high resolution transmission electron microscope observations in lithiated graphite. Moreover, we predict that such domain staging sequences leads to a wide range of diffusivity as reported in experiments.
△ Less
Submitted 14 December, 2016;
originally announced December 2016.
-
Interface identification of the solid electrolyte interphase on graphite
Authors:
Elena Zvereva,
Damien Caliste,
Pascal Pochet
Abstract:
By means of Density Functional Theory calculations we evaluate several lithium carbonate - graphite interface models as a prototype of the Solid Electrolyte Interphase capping layer on graphite anodes in lithium-ion batteries. It is found that only an (a,b)-oriented Li2CO3 slab promotes tight binding with graphite. Such mutual organization of the components combines their structural features and r…
▽ More
By means of Density Functional Theory calculations we evaluate several lithium carbonate - graphite interface models as a prototype of the Solid Electrolyte Interphase capping layer on graphite anodes in lithium-ion batteries. It is found that only an (a,b)-oriented Li2CO3 slab promotes tight binding with graphite. Such mutual organization of the components combines their structural features and reproduces coordination environment of ions, resulting in an adhesive energy of 116 meV/Å2 between graphite and lithium carbonate. This model also presents a high potential affinity with bulk. The corresponding charge distribution at such interface induces an electric potential gradient, such a gradient having been experimentally observed. We regard the mentioned criteria as the key descriptors of the interface stability and recommend them as the principal assessments for such interface study. In addition, we evaluate the impact of lithiated graphite on the stability of the model interface and study the generation of different point defects as mediators for Li interface transport. It is found that Li diffusion is mainly provided by interstitials. The induced potential gradient fundamentally assists the intercalation up to lithiation ratio of 70%.
△ Less
Submitted 5 December, 2016;
originally announced December 2016.
-
Degenerate epitaxy-driven defects in monolayer silicon oxide onto ruthenium
Authors:
Shashank Mathur,
Sergio Vlaic,
Eduardo Machado-Charry,
Anh-Duc Vu,
Valérie Guisset,
Philippe David,
Emmanuel Hadji,
Pascal Pochet,
Johann Coraux
Abstract:
The structure of the ultimately-thin crystalline allotrope of silicon oxide, prepared onto a ruthenium surface, is unveiled down to atomic scale with chemical sensitivity, thanks to high resolution scanning tunneling microscopy and first principle calculations. An ordered oxygen lattice is imaged which coexists with the two-dimensional monolayer oxide. This coexistence signals a displacive transfo…
▽ More
The structure of the ultimately-thin crystalline allotrope of silicon oxide, prepared onto a ruthenium surface, is unveiled down to atomic scale with chemical sensitivity, thanks to high resolution scanning tunneling microscopy and first principle calculations. An ordered oxygen lattice is imaged which coexists with the two-dimensional monolayer oxide. This coexistence signals a displacive transformation from an oxygen reconstructed-Ru(0001) to silicon oxide, along which latterally-shifted domains form, each with equivalent and degenerate epitaxial relationships with the substrate. The unavoidable character of defects at boundaries between these domains appeals for the development of alternative methods capable of producing single-crystalline two-dimensional oxides.
△ Less
Submitted 29 October, 2015;
originally announced October 2015.
-
Defect-induced magnetism in graphite through neutron irradiation
Authors:
Yutian Wang,
Pascal Pochet,
Catherine A. Jenkins,
Elke Arenholz,
Gregor Bukalis,
Sibylle Gemming,
Manfred Helm,
Shengqiang Zhou
Abstract:
We have investigated the variation in the magnetization of highly ordered pyrolytic graphite (HOPG) after neutron irradiation, which introduces defects in the bulk sample and consequently gives rise to a large magnetic signal. We observe strong paramagnetism in HOPG, increasing with the neutron fluence. We correlate the induced paramagnetism with structural defects by comparison with density-funct…
▽ More
We have investigated the variation in the magnetization of highly ordered pyrolytic graphite (HOPG) after neutron irradiation, which introduces defects in the bulk sample and consequently gives rise to a large magnetic signal. We observe strong paramagnetism in HOPG, increasing with the neutron fluence. We correlate the induced paramagnetism with structural defects by comparison with density-functional theory calculations. In addition to the in-plane vacancies, the trans-planar defects also contribute to the magnetization. The lack of any magnetic order between the local moments is possibly due to the absence of hydrogen/nitrogen chemisorption, or the magnetic order cannot be established at all in the bulk form.
△ Less
Submitted 7 January, 2015; v1 submitted 6 October, 2014;
originally announced October 2014.
-
Probing potential energy surface exploration strategies for complex systems
Authors:
Gawonou Kokou N'Tsouaglo,
Laurent Karim Béland,
Jean-François Joly,
Peter Brommer,
Normand Mousseau,
Pascal Pochet
Abstract:
The efficiency of minimum-energy configuration searching algorithms is closely linked to the energy landscape structure of complex systems. Here we characterize this structure by following the time evolution of two systems, vacancy aggregation in Fe and energy relaxation in ion-bombarded c-Si, using the kinetic Activation-Relaxation Technique (k-ART), an off-lattice kinetic Monte Carlo (KMC) metho…
▽ More
The efficiency of minimum-energy configuration searching algorithms is closely linked to the energy landscape structure of complex systems. Here we characterize this structure by following the time evolution of two systems, vacancy aggregation in Fe and energy relaxation in ion-bombarded c-Si, using the kinetic Activation-Relaxation Technique (k-ART), an off-lattice kinetic Monte Carlo (KMC) method, and the well-known Bell-Evans-Polanyi (BEP) principle. We also compare the efficiency of two methods for handling non-diffusive flickering states -- an exact solution and a Tabu-like approach that blocks already visited states. Comparing these various simulations allow us to confirm that the BEP principle does not hold for complex system since forward and reverse energy barriers are completely uncorrelated. This means that following the lowest available energy barrier, even after removing the flickering states, leads to rapid trapping: relaxing complex systems requires crossing high-energy barriers in order to access new energy basins, in agreement with the recently proposed replenish-and-relax model [Béland et al., PRL 111, 105502 (2013)] This can be done by forcing the system through these barriers with Tabu-like methods. Interestingly, we find that following the fundamental kinetics of a system, though standard KMC approach, is at least as efficient as these brute-force methods while providing the correct kinetics information.
△ Less
Submitted 28 July, 2014;
originally announced July 2014.
-
Strain effect and intermixing at the Si surface: A hybrid quantum and molecular mechanics study
Authors:
Laurent Karim Béland,
Eduardo Machado-Charry,
Pascal Pochet,
Normand Mousseau
Abstract:
We investigate Ge mixing at the Si(001) surface and characterize the $2\times N$ Si(001) reconstruction by means of hybrid quantum and molecular mechanics calculations (QM/MM). Avoiding fake elastic dampening, this scheme allows to correctly take into account long range deformation induced by reconstruted and defective surfaces. We focus in particular on the dimer vacancy line (DVL) and its intera…
▽ More
We investigate Ge mixing at the Si(001) surface and characterize the $2\times N$ Si(001) reconstruction by means of hybrid quantum and molecular mechanics calculations (QM/MM). Avoiding fake elastic dampening, this scheme allows to correctly take into account long range deformation induced by reconstruted and defective surfaces. We focus in particular on the dimer vacancy line (DVL) and its interaction with Ge adatoms. We first show that calculated formation energies for these defects are highly dependent on the choice of chemical potential and that the latter must be chosen carefully. Characterizing the effect of the DVL on the deformation field, we also find that the DVL favors Ge segregation in the fourth layer close to the DVL. Using the activation-relaxation technique (ART nouveau) and QM/MM, we show that a complex diffusion path permits the substitution of the Ge atom in the fourth layer, with barriers compatible with mixing observed at intermediate temperature.
△ Less
Submitted 3 July, 2014;
originally announced July 2014.
-
Deciphering mechanisms of enhanced-retarded oxygen diffusion in doped Si
Authors:
Dilyara Timerkaeva,
Damien Caliste,
Pascal Pochet
Abstract:
In this letter, we study enhanced-retarded diffusion of oxygen in doped silicon by means of first principle calculations. We found that the migration of oxygen dimers can not be significantly affected by strain, doping type or rate. We attribute the enhanced oxygen diffusion in p-doped silicon to reduced monomer migration energy, and the retarded oxygen diffusion in Sb-doped to oxygen trapping clo…
▽ More
In this letter, we study enhanced-retarded diffusion of oxygen in doped silicon by means of first principle calculations. We found that the migration of oxygen dimers can not be significantly affected by strain, doping type or rate. We attribute the enhanced oxygen diffusion in p-doped silicon to reduced monomer migration energy, and the retarded oxygen diffusion in Sb-doped to oxygen trapping close to a dopant site. The two proposed kinetic and thermodynamic mechanisms can appear at the same time and might lead to contradictory experimental results. Such mechanisms can be involved in the light induced degradation phenomenon in solar grade silicon.
△ Less
Submitted 16 January, 2014; v1 submitted 10 October, 2013;
originally announced October 2013.
-
Boron aggregation in the ground states of boron-carbon fullerenes
Authors:
Stephan Mohr,
Pascal Pochet,
Maximilian Amsler,
Bastian Schaefer,
Ali Sadeghi,
Luigi Genovese,
Stefan Goedecker
Abstract:
We present novel structural motifs for boron-carbon nano-cages of the stochiometries B12C48 and B12C50, based on first principle calculations. These configurations are distinct from those proposed so far by the fact that the boron atoms are not isolated and distributed over the entire surface of the cages, but rather aggregate at one location to form a patch. Our putative ground state of B12C48 is…
▽ More
We present novel structural motifs for boron-carbon nano-cages of the stochiometries B12C48 and B12C50, based on first principle calculations. These configurations are distinct from those proposed so far by the fact that the boron atoms are not isolated and distributed over the entire surface of the cages, but rather aggregate at one location to form a patch. Our putative ground state of B12C48 is 1.8 eV lower in energy than the previously proposed ground state and violates all the suggested empirical rules for constructing low energy fullerenes. The B12C50 configuration is energetically even more favorable than B12C48, showing that structures derived from the C60 Buckminsterfullerene are not necessarily magic sizes for heterofullerenes.
△ Less
Submitted 10 May, 2013;
originally announced May 2013.
-
Selecting Boron Fullerenes by Cage-Doping Mechanisms
Authors:
Paul Boulanger,
Maxime Moriniere,
Luigi Genovese,
Pascal Pochet
Abstract:
So far, no boron fullerenes were synthesized: more compact sp3-bonded clusters are energetically preferred. To circumvent this, metallic clusters have been suggested by Pochet et al. [Phys. Rev. B 83, 081403(R) (2011)] as "seeds" for a possible synthesis which would topologically protect the sp2 sector of the configuration space. In this paper, we identify a basic pentagonal unit which allows a ba…
▽ More
So far, no boron fullerenes were synthesized: more compact sp3-bonded clusters are energetically preferred. To circumvent this, metallic clusters have been suggested by Pochet et al. [Phys. Rev. B 83, 081403(R) (2011)] as "seeds" for a possible synthesis which would topologically protect the sp2 sector of the configuration space. In this paper, we identify a basic pentagonal unit which allows a balance between the release of strain and the self-doping rule. We formulate a guiding principle for the stability of boron fullerenes, which takes the form of an isolated filled pentagon rule (IFPR). The role of metallic clusters is then reexamined. It is shown that the interplay of the IFPR and the seed-induced doping breaks polymorphism and its related problems: it can effectively select between different isomers and reduce the reactivity of the boron shells. The balance between self and exterior doping represents the best strategy for boron buckyball synthesis.
△ Less
Submitted 16 February, 2013;
originally announced February 2013.
-
X-ray magnetic circular dichroism in (Ge,Mn) compounds: experiments and modeling
Authors:
Samuel Tardif,
Andrey Titov,
Emmanuel Arras,
Ivetta Slipukhina,
El-Kebir Hlil,
Salia Cherifi,
Yves Joly,
Matthieu Jamet,
André Barski,
Joel Cibert,
Erkin Kulatov,
Y. A. Uspenskii,
Pascal Pochet
Abstract:
X-ray absorption (XAS) and x-ray magnetic circular dichroism (XMCD) spectra at the L$_{2,3}$ edges of Mn in (Ge,Mn) compounds have been measured and are compared to the results of first principles calculation. Early \textit{ab initio} studies show that the Density Functional Theory (DFT) can very well describe the valence band electronic properties but fails to reproduce a characteristic change of…
▽ More
X-ray absorption (XAS) and x-ray magnetic circular dichroism (XMCD) spectra at the L$_{2,3}$ edges of Mn in (Ge,Mn) compounds have been measured and are compared to the results of first principles calculation. Early \textit{ab initio} studies show that the Density Functional Theory (DFT) can very well describe the valence band electronic properties but fails to reproduce a characteristic change of sign in the L$_{3}$ XMCD spectrum of Mn in Ge$_3$Mn$_5$, which is observed in experiments. In this work we demonstrate that this disagreement is partially related to an underestimation of the exchange splitting of Mn 2$p$ core states within the local density approximation. It is shown that the change in sign experimentally observed is reproduced if the exchange splitting is accurately calculated within the Hartree-Fock approximation, while the final states can be still described by the DFT. This approach is further used to calculate the XMCD in different (Ge,Mn) compounds. It demonstrates that the agreement between experimental and theoretical spectra can be improved by combining state of the art calculations for the core and valence states respectively.
△ Less
Submitted 17 October, 2013; v1 submitted 6 October, 2012;
originally announced October 2012.
-
Tunable magnetic states in h-BN sheets
Authors:
Eduardo Machado-Charry,
Paul Boulanger,
Luigi Genovese,
Normand Mousseau,
Pascal Pochet
Abstract:
Magnetism in 2D atomic sheets has attracted considerable interest as its existence could allow the development of electronic and spintronic devices. The existence of magnetism is not sufficient for devices, however, as states must be addressable and modifiable through the application of an external drive. We show that defects in hexagonal boron nitride present a strong interplay between the the N-…
▽ More
Magnetism in 2D atomic sheets has attracted considerable interest as its existence could allow the development of electronic and spintronic devices. The existence of magnetism is not sufficient for devices, however, as states must be addressable and modifiable through the application of an external drive. We show that defects in hexagonal boron nitride present a strong interplay between the the N-N distance in the edge and the magnetic moments of the defects. By stress-induced geometry modifications, we change the ground state magnetic moment of the defects. This control is made possible by the triangular shape of the defects as well as the strong spin localisation in the magnetic state.
△ Less
Submitted 3 December, 2012; v1 submitted 27 July, 2012;
originally announced July 2012.
-
Interface-driven phase separation in multifunctional materials: the case of GeMn ferromagnetic semiconductor
Authors:
Emmanuel Arras,
Frédéric Lançon,
Ivetta Slipukhina,
Éric Prestat,
Mauro Rovezzi,
Samuel Tardif,
Andrey Titov,
Pascale Bayle-Guillemaud,
Francesco D'Acapito,
André Barski,
Vincent Favre-Nicolin,
Matthieu Jamet,
Joël Cibert,
Pascal Pochet
Abstract:
We use extensive first principle simulations to show the major role played by interfaces in the mechanism of phase separation observed in semiconductor multifunctional materials. We make an analogy with the precipitation sequence observed in over-saturated AlCu alloys, and replace the Guinier-Preston zones in this new context. A new class of materials, the $α$ phases, is proposed to understand the…
▽ More
We use extensive first principle simulations to show the major role played by interfaces in the mechanism of phase separation observed in semiconductor multifunctional materials. We make an analogy with the precipitation sequence observed in over-saturated AlCu alloys, and replace the Guinier-Preston zones in this new context. A new class of materials, the $α$ phases, is proposed to understand the formation of the coherent precipitates observed in the GeMn system. The interplay between formation and interface energies is analyzed for these phases and for the structures usually considered in the literature. The existence of the alpha phases is assessed with both theoretical and experimental arguments.
△ Less
Submitted 23 March, 2012; v1 submitted 12 March, 2012;
originally announced March 2012.
-
The energy landscape of fullerene materials: a comparison between boron, boron-nitride and carbon
Authors:
Sandip De,
Alexander Willand,
Maximilian Amsler,
Pascal Pochet,
Luigi Genovese,
Stefan Goedecker
Abstract:
Using the minima hopping global geometry optimization method on the density functional potential energy surface we study medium size and large boron clusters. Even though for isolated medium size clusters the ground state is a cage like structure they are unstable against external perturbations such as contact with other clusters. The energy landscape of larger boron clusters is glass like and has…
▽ More
Using the minima hopping global geometry optimization method on the density functional potential energy surface we study medium size and large boron clusters. Even though for isolated medium size clusters the ground state is a cage like structure they are unstable against external perturbations such as contact with other clusters. The energy landscape of larger boron clusters is glass like and has a large number of structures which are lower in energy than the cages. This is in contrast to carbon and boron nitride systems which can be clearly identified as structure seekers in our minima hopping runs. The differences in the potential energy landscape explain why carbon and boron nitride systems are found in nature whereas pure boron fullerenes have not been found.
△ Less
Submitted 5 April, 2011; v1 submitted 14 December, 2010;
originally announced December 2010.
-
Strain and correlation of self-organized Ge_(1-x)Mn_x nanocolumns embedded in Ge (001)
Authors:
S. Tardif,
V. Favre-Nicolin,
F. Lançon,
E. Arras,
M. Jamet,
A. Barski,
C. Porret,
P. Bayle-Guillemaud,
P. Pochet,
T. Devillers,
M. Rovezzi
Abstract:
We report on the structural properties of Ge_(1-x)Mn_x layers grown by molecular beam epitaxy. In these layers, nanocolumns with a high Mn content are embedded in an almost-pure Ge matrix. We have used grazing-incidence X-ray scattering, atomic force and transmission electron microscopy to study the structural properties of the columns. We demonstrate how the elastic deformation of the matrix (as…
▽ More
We report on the structural properties of Ge_(1-x)Mn_x layers grown by molecular beam epitaxy. In these layers, nanocolumns with a high Mn content are embedded in an almost-pure Ge matrix. We have used grazing-incidence X-ray scattering, atomic force and transmission electron microscopy to study the structural properties of the columns. We demonstrate how the elastic deformation of the matrix (as calculated using atomistic simulations) around the columns, as well as the average inter-column distance can account for the shape of the diffusion around Bragg peaks.
△ Less
Submitted 23 August, 2010; v1 submitted 26 May, 2010;
originally announced June 2010.
-
Simulation of the enhanced Curie temperature in Mn_5Ge_3C_x compounds
Authors:
I. Slipukhina,
E. Arras,
Ph. Mavropoulos,
P. Pochet
Abstract:
Mn_5Ge_3C_x films with x>0.5 were experimentally shown to exhibit a strongly enhanced Curie temperature T_C compared to Mn_5Ge_3. In this letter we present the results of our first principles calculations within Green's function approach, focusing on the effect of carbon doping on the electronic and magnetic properties of the Mn_5Ge_3. The calculated exchange coupling constants revealed an enhan…
▽ More
Mn_5Ge_3C_x films with x>0.5 were experimentally shown to exhibit a strongly enhanced Curie temperature T_C compared to Mn_5Ge_3. In this letter we present the results of our first principles calculations within Green's function approach, focusing on the effect of carbon doping on the electronic and magnetic properties of the Mn_5Ge_3. The calculated exchange coupling constants revealed an enhancement of the ferromagnetic Mn-Mn interactions mediated by carbon. The essentially increased T_C in Mn_5Ge_3C is well reproduced in our Monte Carlo simulations and together with the decrease of the total magnetisation is found to be predominantly of an electronic nature.
△ Less
Submitted 17 February, 2009;
originally announced February 2009.
